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Electronic flying qubits offer an interesting alternative to photonic qubits: electrons propagate slower, hence easier to control in real time, and Coulomb interaction enables direct entanglement between different qubits. While their coherence time is limited, picosecond-scale control would make them competitive in terms of number of possible coherent operations. The key challenge lies in achieving the dynamical regime, where the injected plasmonic pulse width is shorter than the quantum device dimensions. Here we reach this new regime in a quantum nanoelectronic system by injecting ultrashort single electron plasmonic pulses into a 14-micrometer-long Mach-Zehnder interferometer. Our findings reveal that quantum coherence is preserved for ultrashort plasmonic pulses, exhibiting enhanced contrast of coherent oscillations compared to the DC regime. Moreover, this coherence remains robust even under large bias voltages. This milestone demonstrates the feasibility of flying qubits as a promising alternative to localized qubit architectures, offering reduced hardware footprint, increased connectivity, and potential for scalable quantum information processing.

In metals and semiconductors, an impurity spin is quantum entangled with and thereby screened by surrounding conduction electrons at low temperatures, called the Kondo screening cloud. Quantum confinement of the Kondo screening cloud in a region, called a Kondo box, with a length smaller than the original cloud extension length strongly deforms the screening cloud and provides a way of controlling the entanglement. Here we realize such a Kondo box and develop an approach to controlling and monitoring the entanglement. It is based on a spin localized in a semiconductor quantum dot, which is screened by conduction electrons along a quasi-one-dimensional channel. The box is formed between the dot and a quantum point contact placed on a channel. As the quantum point contact is tuned to make the confinement stronger, electron conductance through the dot as a function of temperature starts to deviate from the known universal function of the single energy scale, the Kondo temperature. Nevertheless, the entanglement is monitored by the measured conductance according to our theoretical development. The dependence of the monitored entanglement on the confinement strength and temperature implies that the Kondo screening is controlled by tuning the quantum point contact. Namely, the Kondo cloud is deformed by the Kondo box in the region across the original cloud length. Our findings offer a way of manipulating and detecting spatially extended quantum many-body entanglement in solids by electrical means.

In this study, the optical response to a terahertz pulse was investigated in the transition metal chalcogenide Ta$_2$NiSe$_5$, a candidate excitonic insulator. First, by irradiating a terahertz pulse with a relatively weak electric field (0.3 MV/cm), the spectral changes in reflectivity near the absorption edge due to third-order optical nonlinearity were measured and the absorption peak characteristic of the excitonic phase just below the interband transition was identified. Next, by irradiating a strong terahertz pulse with a strong electric field of 1.65 MV/cm, the absorption of the excitonic phase was found to be reduced, and a Drude-like response appeared in the mid-infrared region. These responses can be interpreted as carrier generation by exciton dissociation induced by the electric field, resulting in the partial melting of the excitonic phase and metallization. The presence of a distinct threshold electric field for carrier generation indicates exciton dissociation via quantum-tunnelling processes. The spectral change due to metallization by the electric field is significantly different from that due to the strong optical excitation across the gap, which can be explained by the different melting mechanisms of the excitonic phase in the two types of excitations.

Densely packed, motile bacteria can adopt collective states not seen in conventional, passive materials. These states remain in many ways mysterious, and their physical characterization can aid our understanding of natural bacterial colonies and biofilms as well as materials in general. Here, we overcome challenges associated with generating uniformly growing, large, quasi-two-dimensional bacterial assemblies by a membrane-based microfluidic device and report the emergence of glassy states in two-dimensional suspension of Escherichia coli. As the number density increases by cell growth, populations of motile bacteria transition to a glassy state, where cells are packed and unable to move. This takes place in two steps, the first one suppressing only the orientational modes and the second one vitrifying the motion completely. Characterizing each phase through statistical analyses and investigations of individual motion of bacteria, we find not only characteristic features of glass such as rapid slowdown, dynamic heterogeneity and cage effects, but also a few properties distinguished from those of thermal glass. These distinctive properties include the spontaneous formation of micro-domains of aligned cells with collective motion, the appearance of an unusual signal in the dynamic susceptibility, and the dynamic slowdown with a density dependence generally forbidden for thermal systems. Our results are expected to capture general characteristics of such active rod glass, which may serve as a physical mechanism underlying dense bacterial aggregates.

The quantum Hall system can be used to study many-body physics owing to its multiple internal electronic degrees of freedom and tunability. While quantum phase transitions have been studied intensively, research on the temperature-induced phase transitions of this system is limited. We measured the pure bulk conductivity of a quantum Hall antiferromagnetic state in bilayer graphene over a wide range of temperatures and revealed the two-step phase transition associated with the breaking of the long-range order and short-range antiferromagnetic order. Our findings are fundamental to understanding electron correlation in quantum Hall systems.

We study the interaction between two closely spaced but electrically isolated quasi-one-dimensional electrical wires by a drag experiment. In this work we experimentally demonstrate the generation of current in an unbiased (drag) wire, which results from the interactions with a neighboring biased (drive) wire. The direction of the drag current depends on the length of the one-dimensional wire with respect to the position of the barrier in the drag wire. When we additionally form a potential barrier in the drive wire, the direction of the drag current is determined by the relative position of the two barriers. We interpret this behavior in terms of electron excitations by phonon-mediated interactions between the two wires in presence of the electron scattering inside the drive wire.

The interface of Pt/TiO$_2$ plays an essential role in device engineering and chemical reactions. Here, we report the electrostatic potential distribution of a Pt/TiO$_2$ interface by electron holography. The decrease of the electrostatic potential exists at TiO$_2$ in the vicinity of the interface, indicating the presence of negative charge due to electron transfer from TiO$_2$ and Pt. The decrease of the electrostatic potential can be understood in the difference in work functions between Pt and TiO$_2$. This study reveals the interplay between Pt and TiO$_2$ and the usefulness of electron holography for probing the potential in nanoscale interfaces.

Magnetic Weyl semimetals attract considerable interest not only for their topological quantum phenomena but also as an emerging materials class for realizing quantum anomalous Hall effect in the two-dimensional limit. A shandite compound Co3Sn2S2 with layered Kagome-lattices is one such material, where vigorous efforts have been devoted to synthesize the two-dimensional crystal. Here we report a synthesis of Co3Sn2S2 thin flakes with a thickness of 250 nm by chemical vapor transport method. We find that this facile bottom-up approach allows the formation of large-sized Co3Sn2S2 thin flakes of high-quality, where we identify the largest electron mobility (~2,600 cm2V-1s-1) among magnetic topological semimetals, as well as the large anomalous Hall conductivity (~1,400 \Omega-1cm-1) and anomalous Hall angle (~32 %) arising from the Berry curvature. Our study provides a viable platform for studying high-quality thin flakes of magnetic Weyl semimetal and stimulate further research on unexplored topological phenomena in the two-dimensional limit.

We develop a coherent beam splitter for single electrons driven through two tunnel-coupled quantum wires by surface acoustic waves (SAWs). The output current through each wire oscillates with gate voltages to tune the tunnel-coupling and potential difference between the wires. This oscillation is assigned to coherent electron tunneling motion that can be used to encode a flying qubit and is well reproduced by numerical calculations of time evolution of the SAW-driven single electrons. The oscillation visibility is currently limited to about 3%, but robust against decoherence, indicating that the SAW-electron can serve as a novel platform for a solid-state flying qubit.

Conventional quantum annealing does not sample all ground states fairly. We demonstrate that fair sampling can be achieved by performing simulated annealing on a quantum annealer. We discuss the problems that occur when implementing this method and propose an alternative way to overcome them. We numerically verify the fair sampling ability of our method in a small-scale toy model.

We report quantum efficiency (QE) enhancements in accelerator technology relevant antimonide photocathodes (K2CsSb) by interfacing them with atomically thin two-dimensional (2D) crystal layers. The enhancement occurs in a reflection mode, when a 2D crystal is placed in between the photocathodes and optically reflective substrates. Specifically, the peak QE at 405 nm (3.1 eV) increases by a relative 10 percent, while the long wavelength response at 633 nm (2.0 eV) increases by a relative 36 percent on average and up to 80 percent at localized hot spot regions when photocathodes are deposited onto graphene coated stainless steel. There is a similar effect for photocathodes deposited on hexagonal boron nitride monolayer coatings using nickel substrates. The enhancement does not occur when reflective substrates are replaced with optically transparent sapphire. Optical transmission, X-ray diffraction (XRD) and X-ray fluorescence (XRF) revealed that thickness, crystal orientation, quality and elemental stoichiometry of photocathodes do not appreciably change due to 2D crystal coatings. These results suggest optical interactions are responsible for the QE enhancements when 2D crystal sublayers are present on reflective substrates, and provide a pathway toward a simple method of QE enhancement in semiconductor photocathodes by an atomically thin 2D crystal on substrates.

When a magnetic impurity exists in a metal, conduction electrons form a spin cloud that screens the impurity spin. This basic phenomenon is called the Kondo effect. Contrary to electric charge screening, the spin screening cloud occurs quantum coherently, forming spin-singlet entanglement with the impurity. Although the spins interact locally around the impurity, the cloud can spread out over micrometers. The Kondo cloud has never been detected to date, and its existence, a fundamental aspect of the Kondo effect, remains as a long-standing controversial issue. Here we present experimental evidence of a Kondo cloud extending over a length of micrometers comparable to the theoretical length $\xi_\mathrm{K}$. In our device, a Kondo impurity is formed in a quantum dot (QD), one-sided coupling to a quasi-one dimensional channel~\citeTheory_Proposal_HS that houses a Fabry-Perot (FP) interferometer of various gate-defined lengths $L > 1 \, \mu$m. When we sweep a voltage on the interferometer end gate separated from the QD by the length $L$ to induce FP oscillations in conductance, we observe oscillations in measured Kondo temperature $T_\mathrm{K}$, a sign of the cloud at distance $L$. For $L \lesssim \xi_\mathrm{K}$ the $T_\mathrm{K}$ oscillation amplitude becomes larger for the smaller $L$, obeying a scaling function of a single parameter $L/ \xi_\mathrm{K}$, while for $L>\xi_\mathrm{K}$ the oscillation is much weaker. The result reveals that $\xi_\mathrm{K}$ is the only length parameter associated with the Kondo effect, and that the cloud lies mostly inside the length $\xi_\mathrm{K}$ which reaches microns. Our experimental method of using electron interferometers offers a way of detecting the spatial distribution of exotic non-Fermi liquids formed by multiple magnetic impurities or multiple screening channels and solving long-standing issues of spin-correlated systems.

We investigate supercurrent interference patterns measured as a function of magnetic field in ballistic graphene Josephson junctions. At high doping, the expected $\Phi_{0}$-periodic "Fraunhofer" pattern is observed, indicating a uniform current distribution. Close to the Dirac point, we find anomalous interference patterns with an apparent 2$\Phi_{0}$ periodicity, similar to that predicted for topological Andreev bound states carrying a charge of $e$ instead of $2e$. This feature persists with increasing temperature, ruling out a non-sinusoidal current-phase relationship. It also persists in junctions in which sharp vacuum edges are eliminated. Our results indicate that the observed behavior may originate from an intrinsic property of ballistic graphene Josephson junctions, though the exact mechanism remains unclear.

Intrinsic Hall conductivity, emerging when chiral symmetry is broken, is at the heart of future low energy consumption devices because it can generate non-dissipative charge neutral current. A symmetry breaking state is also induced by electronic correlation even for the centro-symmetric crystalline materials. However, generation of non-dissipative charge neutral current by intrinsic Hall conductivity induced by such spontaneous symmetry breaking is experimentally elusive. Here we report intrinsic Hall conductivity and generation of a non-dissipative charge neutral current in a spontaneous antiferromagnetic state of zero Landau level of bilayer graphene, where spin and valley contrasting Hall conductivity has been theoretically predicted. We performed nonlocal transport experiment and found cubic scaling relationship between the local and nonlocal resistance, as a striking evidence of the intrinsic Hall effect. Observation of such spontaneous Hall transport is a milestone toward understanding the electronic correlation effect on the non-dissipative transport. Our result also paves a way toward electrical generation of a spin current in non-magnetic graphene via coupling of spin and valley in this symmetry breaking state combined with the valley Hall effect.

We study a two-terminal graphene Josephson junction with contacts shaped to form a narrow constriction, less than 100nm in length. The contacts are made from type II superconducting contacts and able to withstand magnetic fields high enough to reach the quantum Hall (QH) regime in graphene. In this regime, the device conductance is determined by edge states, plus the contribution from the constricted region. In particular, the constriction area can support supercurrents up to fields of ~2.5T. Moreover, enhanced conductance is observed through a wide range of magnetic fields and gate voltages. This additional conductance and the appearance of supercurrent is attributed to the tunneling between counter-propagating quantum Hall edge states along opposite superconducting contacts.

Coupling superconductors to quantum Hall edge states is the subject of intense investigation as part of the ongoing search for non-abelian excitations. Our group has previously observed supercurrents of hundreds of picoamperes in graphene Josephson junctions in the quantum Hall regime. One of the explanations of this phenomenon involves the coupling of an electron edge state on one side of the junction to a hole edge state on the opposite side. In our previous samples, these states are separated by several microns. Here, a narrow trench perpendicular to the contacts creates counterpropagating quantum Hall edge channels tens of nanometres from each other. Transport measurements demonstrate a change in the low-field Fraunhofer interference pattern for trench devices and show a supercurrent in both trench and reference junctions in the quantum Hall regime. The trench junctions show no enhancement of quantum Hall supercurrent and an unexpected supercurrent periodicity with applied field, suggesting the need for further optimization of device parameters.

Slow-slip phenomena, including afterslips and silent earthquakes, are studied using a one-dimensional Burridge--Knopoff model that obeys the rate-and-state dependent friction law. By varying only a few model parameters, this simple model allows reproducing a variety of seismic slips within a single framework, including main shocks, precursory nucleation processes, afterslips, and silent earthquakes.

In this study, we examine multiple encapsulated graphene Josephson junctions to determine which mechanisms may be responsible for the supercurrent observed in the quantum Hall (QH) regime. Rectangular junctions with various widths and lengths were studied to identify which parameters affect the occurrence of QH supercurrent. We also studied additional samples where the graphene region is extended beyond the contacts on one side, making that edge of the mesa significantly longer than the opposite edge. This is done in order to distinguish two potential mechanisms: a) supercurrents independently flowing along both non-contacted edges of graphene mesa, and b) opposite sides of the mesa being coupled by hybrid electron-hole modes flowing along the superconductor/graphene boundary. The supercurrent appears suppressed in extended junctions, suggesting the latter mechanism.

Solid-state approaches to quantum information technology are attractive because they are scalable. The coherent transport of quantum information over large distances, as required for a practical quantum computer, has been demonstrated by coupling solid-state qubits to photons1. As an alternative approach for a spin-based quantum computer, single electrons have also been transferred between distant quantum dots in times faster than their coherence time2, 3. However, there have been no demonstrations to date of techniques that can coherently transfer scalable qubits and perform quantum operations on them at the same time. The resulting so-called flying qubits are attractive because they allow for control over qubit separation and non-local entanglement with static gate voltages, which is a significant advantage over other solid-state qubits in confined systems for integration of quantum circuits. Here we report the transport and manipulation of qubits over distances of 6 microns within 40 ps, in an Aharonov-Bohm ring connected to two-channel wires that have a tunable tunnel coupling between channels. The flying qubit state is defined by the presence of a travelling electron in either channel of the wire, and can be controlled without a magnetic field. Our device has shorter quantum gates, longer coherence lengths (~86 \mum at 70 mK), and shorter operation times (~10 ps or 100 GHz) than other solid-state flying qubit implementations4, 5, which makes our solid-state flying qubit potentially scalable.

The transmission phase across a quantum dot (QD) is expected to show mesoscopic behavior, where the appearance of a phase lapse between Coulomb peaks (CPs) as a function of the gate voltage depends on the orbital parity relation between the corresponding CPs. On the other hand, such mesoscopic behavior has been observed only in a limited QD configuration (a few-electron and single-level transport regime) and universal phase lapses by $\pi$ between consecutive CPs have been reported for all the other configurations. Here, we report on the measurement of a transmission phase across a QD around the crossover between single-level and multilevel transport regimes employing an original two-path quantum interferometer. We find mesoscopic behavior for the studied QD. Our results show that the universal phase lapse, a longstanding puzzle of the phase shift, is absent for a standard QD, where several tens of successive well-separated CPs are observed.

The electron wave function experiences a phase modification at coherent transmission through a quantum dot. This transmission phase undergoes a characteristic shift of $\pi$ when scanning through a Coulomb-blockade resonance. Between successive resonances either a transmission phase lapse of $\pi$ or a phase plateau is theoretically expected to occur depending on the parity of the corresponding quantum dot states. Despite considerable experimental effort, this transmission phase behaviour has remained elusive for a large quantum dot. Here we report on transmission phase measurements across such a large quantum dot hosting hundreds of electrons. Using an original electron two-path interferometer to scan the transmission phase along fourteen successive resonances, we observe both phase lapses and plateaus. Additionally, we demonstrate that quantum dot deformation alters the sequence of transmission phase lapses and plateaus via parity modifications of the involved quantum dot states. Our findings set a milestone towards a comprehensive understanding of the transmission phase of quantum dots.

Layer stacking and crystal lattice symmetry play important roles in the band structure and the Landau levels of multilayer graphene. ABA-stacked trilayer graphene possesses mirror-symmetry-protected monolayer-like and bilayer-like band structures. Broken mirror symmetry by a perpendicular electric field therefore induces hybridization between these bands and various quantum Hall phases emerge. We experimentally explore the evolution of Landau levels in ABA-stacked trilayer graphene under electric field. We observe a variety of valley and orbital dependent Landau level evolutions. These evolutions are qualitatively well explained by considering the hybridization between multiple Landau levels possessing close Landau level indices and the hybridization between every third Landau level orbitals due to the trigonal warping effect. These observations are consistent with numerical calculations. The combination of experimental and numerical analysis thus reveals the entire picture of Landau level evolutions decomposed into the monolayer- and bilayer-like band contributions in ABA-stacked trilayer graphene.

We study the transmission phase shift across a Kondo correlated quantum dot in a GaAs heterostructure at temperatures below the Kondo temperature ($T < T_{\rm K}$), where the phase shift is expected to show a plateau at $\pi/2$ for an ideal Kondo singlet ground state. Our device is tuned such that the ratio $\Gamma/U$ of level width $\Gamma$ to charging energy $U$ is quite large ($\lesssim 0.5$ rather than $\ll 1$). This situation is commonly used in GaAs quantum dots to ensure Kondo temperatures large enough ($\simeq 100$ mK here) to be experimentally accessible; however it also implies that charge fluctuations are more pronounced than typically assumed in theoretical studies focusing on the regime $\Gamma/U \ll 1$ needed to ensure a well-defined local moment. Our measured phase evolves monotonically by $\pi$ across the two Coulomb peaks, but without being locked at $\pi/2$ in the Kondo valley for $T \ll T_{\rm K}$, due to a significant influence of large $\Gamma/U$. Only when $\Gamma/U$ is reduced sufficiently does the phase start to be locked around $\pi/2$ and develops into a plateau at $\pi/2$. Our observations are consistent with numerical renormalization group calculations, and can be understood as a direct consequence of the Friedel sum rule that relates the transmission phase shift to the local occupancy of the dot, and thermal average of a transmission coefficient through a resonance level near the Fermi energy.

We investigate the critical current, $I_C$, of ballistic Josephson junctions made of encapsulated graphene/boron-nitride heterostructures. We observe a crossover from the short to the long junction regimes as the length of the device increases. In long ballistic junctions, $I_S$ is found to scale as $\propto \exp(-k_bT/\delta E)$. The extracted energies $\delta E$ are independent of the carrier density and proportional to the level spacing of the ballistic cavity, as determined from Fabry-Perot oscillations of the junction normal resistance. As $T\rightarrow 0$ the critical current of a long (or short) junction saturates at a level determined by the product of $\delta E$ (or $\Delta$) and the number of the junction's transversal modes.

We present transport measurements on long diffusive graphene-based Josephson junctions. Several junctions are made on a single-domain crystal of CVD graphene and feature the same contact width of ~9$\mu$m but vary in length from 400 to 1000 nm. As the carrier density is tuned with the gate voltage, the critical current in the these junctions spans a range from a few nA up to more than $5\mu$A, while the Thouless energy, ETh, covers almost two orders of magnitude. Over much of this range, the product of the critical current and the normal resistance IcRn is found to scale linearly with ETh, as expected from theory. However, the ratio IcRn /ETh is found to be 0.1-0.2: much smaller than the predicted ~10 for long diffusive SNS junctions.

We study the injection mechanism of a single electron from a static quantum dot into a moving quantum dot created in a long depleted channel with surface acoustic waves (SAWs). We demonstrate that such a process is characterized by an activation law with a threshold that depends on the SAW amplitude and the dot-channel potential gradient. By increasing sufficiently the SAW modulation amplitude, we can reach a regime where the transfer is unitary and potentially adiabatic. This study points at the relevant regime to use moving dots in quantum information protocols.

A novel promising route for creating topological states and excitations is to combine superconductivity and the quantum Hall (QH) effect. Despite this potential, signatures of superconductivity in the quantum Hall regime remain scarce, and a superconducting current through a QH weak link has so far eluded experimental observation. Here we demonstrate the existence of a new type of supercurrent-carrying states in a QH region at magnetic fields as high as 2Tesla. The observation of supercurrent in the quantum Hall regime marks an important step in the quest for exotic topological excitations such as Majorana fermions and parafermions, which may find applications in fault-tolerant quantum computations.

Transporting ensembles of electrons over long distances without losing their spin polarization is an important benchmark for spintronic devices. It requires usually to inject and to probe spin polarized electrons in conduction channels using ferromagnetic contacts or optical excitation. Parallel to this development, an important effort has been dedicated to the control of nanocircuits at the single electron level. The detection and the coherent manipulation of the spin of a single electron trapped in a quantum dot are now well established. Combined with the recent control of the displacement of individual electrons between two distant quantum dots, these achievements permit to envision the realization of spintronic protocols at the single electron level. Here, we demonstrate that spin information carried by one or two electrons can be transferred between two quantum dots separated by a distance of 4 micrometers with a classical fidelity of 65 %. We show that it is presently limited by spin flips occurring during the transfer procedure prior to and after the electron displacement. Being able to encode and control information in the spin degree of freedom of a single electron while being transferred over distances of a few microns on nanosecond timescales paves the way towards "quantum spintronics" devices where large scale spin-based quantum information processing could be implemented.

A quantum two-path interferometer allows for direct measurement of the transmission phase shift of an electron, providing useful information on coherent scattering problems. In mesoscopic systems, however, the two-path interference is easily smeared by contributions from other paths, and this makes it difficult to observe the \textittrue transmission phase shift. To eliminate this problem, multi-terminal Aharonov-Bohm (AB) interferometers have been used to derive the phase shift by assuming that the relative phase shift of the electrons between the two paths is simply obtained when a smooth shift of the AB oscillations is observed. Nevertheless the phase shifts using such a criterion have sometimes been inconsistent with theory. On the other hand, we have used an AB ring contacted to tunnel-coupled wires and acquired the phase shift consistent with theory when the two output currents through the coupled wires oscillate with well-defined anti-phase. Here, we investigate thoroughly these two criteria used to ensure a reliable phase measurement, the anti-phase relation of the two output currents and the smooth phase shift in the AB oscillation. We confirm that the well-defined anti-phase relation ensures a correct phase measurement with a quantum two-path interference. In contrast we find that even in a situation where the anti-phase relation is less well-defined, the smooth phase shift in the AB oscillation can still occur but does not give the correct transmission phase due to contributions from multiple paths. This indicates that the phase relation of the two output currents in our interferometer gives a good criterion for the measurement of the \textittrue transmission phase while the smooth phase shift in the AB oscillation itself does not.

We have studied the electronic and magnetic states of Co and Mn atoms at the interface of the Co$_\mathrm{2}$Mn$_{\beta}$Si (CMS)/MgO ($\beta$=0.69, 0.99, 1.15 and 1.29) magnetic tunnel junction (MTJ) by means of x-ray magnetic circular dichroism. In particular, the Mn composition ($\beta$) dependences of the Mn and Co magnetic moments were investigated. The experimental spin magnetic moments of Mn, $m_\mathrm{spin}$(Mn), derived from XMCD weakly decreased with increasing Mn composition $\beta$ in going from Mn-deficient to Mn-rich CMS films. This behavior was explained by first-principles calculations based on the antisite-based site-specific formula unit (SSFU) composition model, which assumes the formation of only antisite defect, not vacancies, to accommodate off-stoichiometry. Furthermore, the experimental spin magnetic moments of Co, $m_\mathrm{spin}$(Co), also weakly decreased with increasing Mn composition. This behavior was consistently explained by the antisite-based SSFU model, in particular, by the decrease in the concentration of Co$_\mathrm{Mn}$ antisites detrimental to the half-metallicity of CMS with increasing $\beta$. This finding is consistent with the higher TMR ratios which have been observed for CMS/MgO/CMS MTJs with Mn-rich CMS electrodes.

We study the second-order Raman process of mono- and few-layer MoTe$_2$, by combining \em ab initio density functional perturbation calculations with experimental Raman spectroscopy using 532, 633 and 785 nm excitation lasers. The calculated electronic band structure and the density of states show that the electron-photon resonance process occurs at the high-symmetry M point in the Brillouin zone, where a strong optical absorption occurs by a logarithmic Van-Hove singularity. Double resonance Raman scattering with inter-valley electron-phonon coupling connects two of the three inequivalent M points in the Brillouin zone, giving rise to second-order Raman peaks due to the M point phonons. The predicted frequencies of the second-order Raman peaks agree with the observed peak positions that cannot be assigned in terms of a first-order process. Our study attempts to supply a basic understanding of the second-order Raman process occurring in transition metal di-chalcogenides (TMDs) and may provide additional information both on the lattice dynamics and optical processes especially for TMDs with small energy band gaps such as MoTe$_2$ or at high laser excitation energy.

Valley is a useful degree of freedom for non-dissipative electronics since valley current that can flow even in an insulating material does not accompany electronic current. We use dual-gated bilayer graphene in the Hall bar geometry to electrically control broken inversion symmetry or Berry curvature as well as the carrier density to generate and detect the pure valley current. We find a large nonlocal resistance and a cubic scaling between the nonlocal resistance and the local resistivity in the insulating regime at zero-magnetic field and 70 K as evidence of the pure valley current. The electrical control of the valley current in the limit of zero conductivity allows non-dissipative induction of valley current from electric field and thus provides a significant contribution to the advancement of non-dissipative electronics.

We studied experimentally the dynamics of the exchange interaction between two antiparallel electron spins in a so-called metastable double quantum dot where coupling to the electron reservoirs can be ignored. We demonstrate that the level of control of such a double dot is higher than in conventional double dots. In particular, it allows to couple coherently two electron spins in an efficient manner following a scheme initially proposed by Loss and DiVincenzo. The present study demonstrates that metastable quantum dots are a possible route to increase the number of coherently coupled quantum dots.

Understanding the interfacial electrical properties between metallic electrodes and low dimensional semiconductors is essential for both fundamental science and practical applications. Here we report the observation of thickness reduction induced crossover of electrical contact at Au/MoS2 interfaces. For MoS2 thicker than 5 layers, the contact resistivity slightly decreases with reducing MoS2 thickness. By contrast, the contact resistivity sharply increases with reducing MoS2 thickness below 5 layers, mainly governed by the quantum confinement effect. It is found that the interfacial potential barrier can be finely tailored from 0.3 to 0.6 eV by merely varying MoS2 thickness. A full evolution diagram of energy level alignment is also drawn to elucidate the thickness scaling effect. The finding of tailoring interfacial properties with channel thickness represents a useful approach controlling the metal/semiconductor interfaces which may result in conceptually innovative functionalities.

We discuss an electronic interferometer recently measured by Yamamoto et al. This "flying quantum bit" experiment showed quantum oscillations between electronic trajectories of two tunnel-coupled wires connected via an Aharanov-Bohm ring. We present a simple scattering model as well as a numerical microscopic model to describe this experiment. In addition, we present new experimental data to which we confront our numerical results. While our analytical model provides basic concepts for designing the flying qubit device, we find that our numerical simulations allow to reproduce detailed features of the transport measurements such as in-phase and anti-phase oscillations of the two output currents as well as a smooth phase shift when sweeping a side gate. Furthermore, we find remarkable resemblance for the magneto conductance oscillations in both conductance and visibility between simulations and experiments within a specific parameter range.

Recent experiments [M. Yamamoto et al., Nature Nanotechnology 7, 247 (2012)] used the transport of electrons through an Aharonov-Bohm interferometer and two coupled channels (at both ends of the interferometer) to demonstrate a manipulable flying qubit. Results included in-phase and anti-phase Aharonov-Bohm (AB) oscillations of the two outgoing currents as a function of the magnetic flux, for strong and weak inter-channel coupling, respectively. Here we present new experimental results for a three terminal interferometer, with a tunnel coupling between the two outgoing wires. We show that in some limits, this system is an even simpler realization of the "two-slit" experiment. We also present a simple tight- binding theoretical model which imitates the experimental setup. For weak inter-channel coupling, the AB oscillations in the current which is reflected from the device are very small, and therefore the oscillations in the two outgoing currents must cancel each other, yielding the anti-phase behavior, independent of the length of the coupling regime. For strong inter-channel coupling, whose range depends on the asymmetry between the channels, and for a relatively long coupling distance, all except two of the waves in the coupled channels become evanescent. For the remaining running waves one has a very weak dependence of the ratio between the currents in the two channels on the magnetic flux, implying that these currents are in phase with each other.

We report on the direct observation of the transmission phase shift through a Kondo correlated quantum dot by employing a new type of two-path interferometer. We observed a clear $\pi/2$-phase shift, which persists up to the Kondo temperature $T_{\rm K}$. Above this temperature, the phase shifts by more than $\pi/2$ at each Coulomb peak, approaching the behavior observed for the standard Coulomb blockade regime. These observations are in remarkable agreement with 2-level numerical renormalization group calculations. The unique combination of experimental and theoretical results presented here fully elucidates the phase evolution in the Kondo regime.

Coherent diffraction imaging (CDI) using synchrotron radiation, X-ray free electron lasers (X-FELs), high harmonic generation, soft X-ray lasers, and optical lasers has found broad applications across several disciplines. An active research direction in CDI is to determine the structure of single particles with intense, femtosecond X-FEL pulses based on diffraction-before-destruction scheme. However, single-shot 3D structure determination has not been experimentally realized yet. Here we report the first experimental demonstration of single-shot 3D structure determination of individual nanocrystals using ~10 femtosecond X-FEL pulses. Coherent diffraction patterns are collected from high-index-faceted nanocrystals, each struck by a single X-FEL pulse. Taking advantage of the symmetry of the nanocrystal, we reconstruct the 3D structure of each nanocrystal from a single-shot diffraction pattern at ~5.5 nm resolution. As symmetry exists in many nanocrystals and virus particles, this method can be applied to 3D structure studies of such particles at nanometer resolution on femtosecond time scales.

We have experimentally studied the optical refractive index of few-layer graphene through reflection spectroscopy at visible wavelengths. A laser scanning microscope (LSM) with a coherent supercontinuum laser source measured the reflectivity of an exfoliated graphene flake on a Si/SiO2 substrate, containing monolayer, bilayer and trilayer areas, as the wavelength of the laser was varied from 545nm to 710nm. The complex refractive index of few-layer graphene, n-ik, was extracted from the reflectivity contrast to the bare substrate and the Fresnel reflection theory. Since the SiO2 thickness enters to the modeling as a parameter, it was precisely measured at the location of the sample. It was found that a common constant optical index cannot explain the wavelength-dependent reflectivity data for single-, double- and three-layer graphene simultaneously, but rather each individual few-layer graphene possesses a unique optical index whose complex values were precisely and accurately determined from the experimental data.

Fully epitaxial magnetic tunnel junctions (MTJs) with off-stoichiometric Co2-based Heusler alloy shows a intense dependency of the tunnel magnetoresistance (TMR) on the Mn composition, demonstrating giant TMR ratios of up to 1995% at 4.2 K for 1. This work reports on the electronic structure of non-stoichiometric CoxMnyGez thin films with a fixed Co/Ge ratio of x : z = 2 : 0.38. The electronic structure was investigated by high energy, hard X-ray photoelectron spectroscopy combined with first-principles calculations. The high-resolution measurements of the valence band of the non-stoichiometric CoxMnyGez films close to the Fermi energy indicate a shift of the spectral weight compared to bulk Co2MnGe. This is in agreement with the changes in the density of states predicted by the calculations. Furthermore it is shown that the co-sputtering of Co2MnGe together with additional Mn is an appropriate technique to adjust the stoichiometry of the CoxMnyGez film composition. The resulting changes of the electronic structure within the valence band will allow to tune the magnetoresistive characteristics of CoxMnyGez based tunnel junctions as verified by the calculations and photoemission experiments.

The performance of advanced magnetic tunnel junctions build of ferromagnetic (FM) electrodes and MgO as insulating barrier depends decisively on the properties of the FM/insulator interface. Here, we investigate interface formation between the half-metallic compound Co2MnSi (CMS) and MgO by means of Auger electron spectroscopy, low energy electron diffraction and low energy photoemission. The studies are performed for different annealing temperatures TA and MgO layer coverages (4, 6, 10, 20 and 50 ML). Thin MgO top layers (t_MgO<=10 ML) show distinct surface crystalline distortions, which can only be partly healed out by annealing and furthermore lead to distinct adsorption of carbon species after the MgO surface is exposed to air. For t_MgO> 10 ML the MgO layer surface exhibits clearly improved crystalline structure and hence only marginal amounts of adsorbates. We attribute these findings to MgO misfit dislocations occurring at the interface, inducing further defects throughout the MgO layer for up to at least 10 ML. Furthermore, spin-polarized photoemission spectra of the CMS/MgO interface are obtained for MgO coverages up to 20 ML, showing a clear positive spin polarization near the Fermi energy in all cases.

We present a novel approach to study the spin and symmetry electronic properties of buried interfaces using low-energy spin-resolved photoemission spectroscopy. We show that this method is sensitive to interfaces buried below more than 20ML (~4nm) MgO, providing a powerful tool for the non-destructive characterization of spintronics interfaces. As a demonstration, we apply this technique to characterize the Co2MnSi/MgO interface, a fundamental building block of state-of-the-art magnetic tunnel junctions based on Heusler compounds. We find that a surface state with ∆1 symmetry and minority spin character dominating the electronic structure of the bare Co2MnSi(100) surface is quenched at the Co2MnSi(100)/MgO interface. As a result, the interface spin-dependent electronic structure resembles the theoretically expected Co2MnSi bulk band structure, with majority spin electronic states of both ∆1 and ∆5 symmetry. Furthermore we find an additional thermally-induced contribution in the minority channel, mirroring the ∆1/∆5 asymmetry of the majority channel.

Thin membranes exhibit complex responses to external forces or geometrical constraints. A familiar example is the wrinkling, exhibited by human skin, plant leaves, and fabrics, resulting from the relative ease of bending versus stretching. Here, we study the wrinkling of graphene, the thinnest and stiffest known membrane, deposited on a silica substrate decorated with silica nanoparticles. At small nanoparticle density monolayer graphene adheres to the substrate, detached only in small regions around the nanoparticles. With increasing nanoparticle density, we observe the formation of wrinkles which connect nanoparticles. Above a critical nanoparticle density, the wrinkles form a percolating network through the sample. As the graphene membrane is made thicker, global delamination from the substrate is observed. The observations can be well understood within a continuum elastic model and have important implications for strain-engineering the electronic properties of graphene.

Electric transport of double gated bilayer graphene devices is studied as a function of charge density and bandgap. A top gate electrode can be used to control locally the Fermi level to create a pn junction between the double-gated and single-gated region. These bilayer graphene pn diodes are characterized by non-linear currents and directional current rectification, and we show the rectified direction of the source-drain voltage can be controlled by using gate voltages. A systematic study of the pn junction characteristics allows to extract a gate-dependent bandgap value which ranges from 0 meV to 130 meV.

Using a combined approach of spin-resolved photoemission spectroscopy, band structure and photoemission calculations we investigate the influence of bulk defects and surface states on the spin polarization of Co2Mn(alpha)Si thin films with bulk L21 order. We find that for Mn-poor alloys the spin polarization at EF is negative due to the presence of Co_Mn antisite and minority surface state contributions. In Mn-rich alloys, the suppression of Co(Mn) antisites leads to a positive spin polarization at the Fermi energy, and the influence of minority surface states on the photoelectron spin polarization is reduced.

Electrons in a metal are indistinguishable particles that strongly interact with other electrons and their environment. Isolating and detecting a single flying electron after propagation to perform quantum optics like experiments at the single electron level is therefore a challenging task. Up to date, only few experiments have been performed in a high mobility two-dimensional electron gas where the electron propagates almost ballistically. Flying electrons were detected via the current generated by an ensemble of electrons and electron correlations were encrypted in the current noise. Here we demonstrate the experimental realisation of high efficiency single electron source and single electron detector for a quantum medium where a single electron is propagating isolated from the other electrons through a one-dimensional channel. The moving potential is excited by a surface acoustic wave, which carries the single electron along the 1D-channel at a speed of 3\mum/ns. When such a quantum channel is placed between two quantum dots, a single electron can be transported from one quantum dot to the other, which is several micrometres apart, with a quantum efficiency of emission and detection of 96% and 92%, respectively. Furthermore, the transfer of the electron can be triggered on a timescale shorter than the coherence time T2* of GaAs spin qubits6. Our work opens new avenues to study the teleportation of a single electron spin and the distant interaction between spatially separated qubits in a condensed matter system.

This work reports the measurement of magnetic dichroism in angular-resolved photoemission from in-plane magnetized buried thin films. The high bulk sensitivity of hard X-ray photoelectron spectroscopy (HAXPES) in combination with circularly polarized radiation enables the investigation of the magnetic properties of buried layers. HAXPES experiments with an excitation energy of 8 keV were performed on exchange-biased magnetic layers covered by thin oxide films. Two types of structures were investigated with the IrMn exchange-biasing layer either above or below the ferromagnetic layer: one with a CoFe layer on top and another with a Co$_2$FeAl layer buried beneath the IrMn layer. A pronounced magnetic dichroism is found in the Co and Fe $2p$ states of both materials. The localization of the magnetic moments at the Fe site conditioning the peculiar characteristics of the Co$_2$FeAl Heusler compound, predicted to be a half-metallic ferromagnet, is revealed from the magnetic dichroism detected in the Fe $2p$ states.

We report markedly different transport properties of ABA- and ABC-stacked trilayer graphenes. Our experiments in double-gated trilayer devices provide evidence that a perpendicular electric field opens an energy gap in the ABC trilayer, while it causes the increase of a band overlap in the ABA trilayer. In a perpendicular magnetic field, the ABA trilayer develops quantum Hall plateaus at filling factors of \nu = 2, 4, 6... with a step of ∆\nu = 2, whereas the inversion symmetric ABC trilayer exhibits plateaus at \nu = 6 and 10 with 4-fold spin and valley degeneracy.

Since the discovery of graphene -a single layer of carbon atoms arranged in a honeycomb lattice - it was clear that this truly is a unique material system with an unprecedented combination of physical properties. Graphene is the thinnest membrane present in nature -just one atom thick- it is the strongest material, it is transparent and it is a very good conductor with room temperature charge mobilities larger than the typical mobilities found in silicon. The significance played by this new material system is even more apparent when considering that graphene is the thinnest member of a larger family: the few-layer graphene materials. Even though several physical properties are shared between graphene and its few-layers, recent theoretical and experimental advances demonstrate that each specific thickness of few-layer graphene is a material with unique physical properties.

Novel materials are in great demand for future applications. The discovery of graphene, a one atom thick carbon layer, holds the promise for unique device architectures and functionalities exploiting unprecedented physical phenomena. The ability to embed graphene materials in a double gated structure allowed on-chip realization of relativistic tunneling experiments in single layer graphene, the discovery of a gate tunable band gap in bilayer graphene and of a gate tunable band overlap in trilayer graphene. Here we discuss recent advances in the physics and nanotechnology fabrication of double gated single- and few-layer graphene devices.

The superfluid $^3$He B phase, one of the oldest unconventional fermionic condensates experimentally realized, is recently predicted to support Majorana fermion surface states. Majorana fermion, which is characterized by the equivalence of particle and antiparticle, has a linear dispersion relation referred to as the Majorana cone. We measured the transverse acoustic impedance $Z$ of the superfluid$^3$He B phase changing its boundary condition and found a growth of peak in $Z$ on a higher specularity wall. Our theoretical analysis indicates that the variation of $Z$ is induced by the formation of the cone-like dispersion relation and thus confirms the important feature of the Majorana fermion in the specular limit.

Strain engineering of graphene through interaction with a patterned substrate offers the possibility of tailoring its electronic properties, but will require detailed understanding of how graphene's morphology is determined by the underlying substrate. However, previous experimental reports have drawn conflicting conclusions about the structure of graphene on SiO2. Here we show that high-resolution non-contact atomic force microscopy of SiO2 reveals roughness at the few-nm length scale unresolved in previous measurements, and scanning tunneling microscopy of graphene on SiO2 shows it to be slightly smoother than the supporting SiO2 substrate. Quantitative analysis of the competition between bending rigidity of the graphene and adhesion to the substrate explains the observed roughness of monolayer graphene on SiO2 as extrinsic, and provides a natural, intuitive description in terms of highly conformal adhesion. The analysis indicates that graphene adopts the conformation of the underlying substrate down to the smallest features with nearly 99% fidelity.

Quantum dots induced by a strong magnetic field applied to a single layer of graphene in the perpendicular direction are investigated. The dot is defined by a model potential which consists of a well of depth $\Delta V$ relative to a flat asymptotic part and quantum states formed from the zeroth Landau level are considered. The energy of the dot states cannot be lower than $-\Delta V$ relative to the asymptotic potential. Consequently, when $\Delta V$ is chosen to be about half of the gap between the zeroth and first Landau levels, the dot states are isolated energetically in the gap between Landau level 0 and Landau level -1. This is confirmed with numerical calculations of the magnetic field dependent energy spectrum and the quantum states. Remarkably, an antidot formed by reversing the sign of $\Delta V$ also confines electrons but in the energy region between Landau level 0 and Landau level +1. This unusual behaviour gives an unambiguous signal of the novel physics of graphene quantum dots.

Single layer graphene islands with a typical diameter of several nanometers were grown on a Pt (111) substrate. Scanning tunneling microscopy (STM) analysis showed most of islands are hexagonally shaped and the zigzag-type edge predominates over the armchair-type edge. The apparent height at the atoms on the zigzag edge is enhanced with respect to the inside atoms for a small sample bias voltage, while such an enhancement was not observed at the atoms on the armchair edge. This result provides an experimental evidence of spatially (at the zigzag edge) and energetically (at the Fermi level) localized edge state in the nanographene islands, which were prepared chemically on Pt (111).

The performance of Heusler based magnetoresistive multilayer devices depends crucially on the spin polarization and thus on the structural details of the involved surfaces. Using low energy electron diffraction (LEED), one can non-destructively distinguish between important surface terminations of Co2XY full-Heusler alloys. We present an analysis of the LEED patterns of the Y-Z ,the vacancy-Z, the Co and the disordered B2 and A2 terminations. As an example, we show that the surface geometries of bulk L21 ordered Co2MnSi and bulk B2 disordered Co2Cr0.6Fe0.4Al can be determined by comparing the experimental LEED patterns with the presented reference patterns.

In graphene nanoribbon junctions, the nearly perfect transmission occurs in some junctions while the zero conductance dips due to anti-resonance appear in others. We have classified the appearance of zero conductance dips for all combinations of ribbon and junction edge structures. These transport properties do not attribute to the whole junction structure but the partial corner edge structure, which indicates that one can control the electric current simply by cutting a part of nanoribbon edge. The ribbon width is expected to be narrower than 10 nm in order to observe the zero conductance dips at room temperature.

We will present brief overview on the electronic and transport properties of graphene nanoribbons focusing on the effect of edge shapes and impurity scattering. The low-energy electronic states of graphene have two non-equivalent massless Dirac spectrum. The relative distance between these two Dirac points in the momentum space and edge states due to the existence of the zigzag type graphene edges are decisive to the electronic and transport properties of graphene nanoribbons. In graphene nanoribbons with zigzag edges, two valleys related to each Dirac spectrum are well separated in momentum space. The propagating modes in each valley contain a single chiral mode originating from a partially flat band at band center. This feature gives rise to a perfectly conducting channel in the disordered system, if the impurity scattering does not connect the two valleys, i.e. for long-range impurity potentials. On the other hand, the low-energy spectrum of graphene nanoribbons with armchair edges is described as the superposition of two non-equivalent Dirac points of graphene. In spite of the lack of well-separated two valley structures, the single-channel transport subjected to long-ranged impurities is nearly perfectly conducting, where the backward scattering matrix elements in the lowest order vanish as a manifestation of internal phase structures of the wavefunction. Symmetry considerations lead to the classification of disordered zigzag ribbons into the unitary class for long-range impurities, and the orthogonal class for short-range impurities. However, no such crossover occurs in armchair nanoribbons.

The quantum corrections to the energies of the $\Gamma$ point optical phonon modes (Kohn anomalies) in graphene nanoribbons are investigated. We show theoretically that the longitudinal optical modes undergo a Kohn anomaly effect, while the transverse optical modes do not. In relation to Raman spectroscopy, we show that the longitudinal modes are not Raman active near the zigzag edge, while the transverse optical modes are not Raman active near the armchair edge. These results are useful for identifying the orientation of the edge of graphene nanoribbons by G band Raman spectroscopy, as is demonstrated experimentally. The differences in the Kohn anomalies for nanoribbons and for metallic single wall nanotubes are pointed out, and our results are explained in terms of pseudospin effects.

We discuss transport through double gated single and few layer graphene devices. This kind of device configuration has been used to investigate the modulation of the energy band structure through the application of an external perpendicular electric field, a unique property of few layer graphene systems. Here we discuss technological details that are important for the fabrication of top gated structures, based on electron-gun evaporation of SiO$_2$. We perform a statistical study that demonstrates how --contrary to expectations-- the breakdown field of electron-gun evaporated thin SiO$_2$ films is comparable to that of thermally grown oxide layers. We find that a high breakdown field can be achieved in evaporated SiO$_2$ only if the oxide deposition is directly followed by the metallization of the top electrodes, without exposure to air of the SiO$_2$ layer.

We study the conductance of phase-coherent disordered quantum wires focusing on the case in which the number of conducting channels is imbalanced between two propagating directions. If the number of channels in one direction is by one greater than that in the opposite direction, one perfectly conducting channel without backscattering is stabilized regardless of wire length. Consequently, the dimensionless conductance does not vanish but converges to unity in the long-wire limit, indicating the absence of Anderson localization. To observe the influence of a perfectly conducting channel, we numerically obtain the distribution of conductance in both cases with and without a perfectly conducting channel. We show that the characteristic form of the distribution is notably modified in the presence of a perfectly conducting channel.

The low-energy spectrum of graphene nanoribbons with armchair edges (armchair nanoribbons) is described as the superposition of two non-equivalent Dirac points of graphene. In spite of the lack of well-separated two valley structures, the single-channel transport subjected to long-ranged impurities is nearly perfectly conducting, where the backward scattering matrix elements in the lowest order vanish as a manifestation of internal phase structures of the wavefunction. For multi-channel energy regime, however, the conventional exponential decay of the averaged conductance occurs. Since the inter-valley scattering is not completely absent, armchair nanoribbons can be classified into orthogonal universality class irrespective of the range of impurities. The nearly perfect single-channel conduction dominates the low-energy electronic transport in rather narrow nanorribbons.

We report a systematic study of the contact resistance present at the interface between a metal (Ti) and graphene layers of different, known thickness. By comparing devices fabricated on 11 graphene flakes we demonstrate that the contact resistance is quantitatively the same for single-, bi-, and tri-layer graphene ($\sim800 \pm 200 \Omega \mu m$), and is in all cases independent of gate voltage and temperature. We argue that the observed behavior is due to charge transfer from the metal, causing the Fermi level in the graphene region under the contacts to shift far away from the charge neutrality point.

Numerical calculations have been performed to elucidate unconventional electronic transport properties in disordered nanographene ribbons with zigzag edges (zigzag ribbons). The energy band structure of zigzag ribbons has two valleys that are well separated in momentum space, related to the two Dirac points of the graphene spectrum. The partial flat bands due to edge states make the imbalance between left- and right-going modes in each valley, \it i.e. appearance of a single chiral mode. This feature gives rise to a perfectly conducting channel in the disordered system, i.e. the average of conductance $<g>$ converges exponentially to 1 conductance quantum per spin with increasing system length, provided impurity scattering does not connect the two valleys, as is the case for long-range impurity potentials. Ribbons with short-range impurity potentials, however, through inter-valley scattering, display ordinary localization behavior. Symmetry considerations lead to the classification of disordered zigzag ribbons into the unitary class for long-range impurities, and the orthogonal class for short-range impurities. The electronic states of graphene nanoribbons with general edge structures are also discussed, and it is demonstrated that chiral channels due to the edge states are realized even in more general edge structures except for armchair edges.

DFT calculation of various atomic species on graphene sheet is investigated as prototypes for formation of nano-structures on carbon nanotube (CNT) wall. We investigate computationally adsorption energies and adsorption sites on graphene sheet for a lot of atomic species including transition metals, noble metals, nitrogen and oxygen, using the DFT calculation as a prototype for CNT. The suitable atomic species can be chosen as each application from those results. The calculated results show us that Mo and Ru are bounded strongly on graphene sheet with large diffusion barrier energy. On the other hand, some atomic species has large binding energies with small diffusion barrier energies

We report measurements of current noise auto- and cross-correlation in a tunable quantum dot with two or three leads. As the Coulomb blockade is lifted at finite source-drain bias, the auto-correlation evolves from super-Poissonian to sub-Poissonian in the two-lead case, and the cross-correlation evolves from positive to negative in the three-lead case, consistent with transport through multiple levels. Cross-correlations in the three-lead dot are found to be proportional to the noise in excess of the Poissonian value in the limit of weak output tunneling.

We investigate numerically the spin polarization of the current in the presence of Rashba spin-orbit interaction in a T-shaped conductor proposed by A.A. Kiselev and K.W. Kim (Appl. Phys. Lett. \bf 78 775 (2001)). The recursive Green function method is used to calculate the three terminal spin dependent transmission probabilities. We focus on single-channel transport and show that the spin polarization becomes nearly 100 % with a conductance close to $e^{2}/h$ for sufficiently strong spin-orbit coupling. This is interpreted by the fact that electrons with opposite spin states are deflected into an opposite terminal by the spin dependent Lorentz force. The influence of the disorder on the predicted effect is also discussed. Cases for multi-channel transport are studied in connection with experiments.

A novel spin filtering in two-dimensional electron system with nonuniform spin-orbit interactions (SOI) is theoretically studied. The strength of SOI is modulated perpendicular to the charge current. A spatial gradient of effective magnetic field due to the nonuniform SOI causes the Stern-Gerlach type spin separation. The direction of the polarization is perpendicular to the current and parallel to the spatial gradient. Almost 100 % spin polarization can be realized even without applying any external magnetic fields and without attaching ferromagnetic contacts. The spin polarization persists even in the presence of randomness.

Electron transport through disordered systems that include spin scatterers is studied numerically. We consider three kinds of magnetic impurities: the Ising, the XY and the Heisenberg. By extending the transfer matrix method to include the spin degree of freedom, the two terminal conductance is calculated. The variance of conductance is halved as the number of spin components of the magnetic impurities increases. Application of the Zeeman field in the lead causes a further halving of the variance under certain conditions.