Tuneable electronic properties in graphene

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Novel materials are in great demand for future applications. The discovery of graphene, a one atom thick carbon layer, holds the promise for unique device architectures and functionalities exploiting unprecedented physical phenomena. The ability to embed graphene materials in a double gated structure allowed on-chip realization of relativistic tunneling experiments in single layer graphene, the discovery of a gate tunable band gap in bilayer graphene and of a gate tunable band overlap in trilayer graphene. Here we discuss recent advances in the physics and nanotechnology fabrication of double gated single- and few-layer graphene devices.
Submitted 23 Jan 2011 to Mesoscale and Nanoscale Physics [cond-mat.mes-hall]
Published 25 Jan 2011
Author comments: NanoToday Press
Journal ref: NanoToday(2011)
Doi: 10.1016/j.nantod.2010.12.001
https://arxiv.org/abs/1101.4383
https://arxiv.org/pdf/1101.4383.pdf
https://arxiv-vanity.com/papers/1101.4383

View this paper on arXiv.wiki:
https://arxiv.wiki/abs/1101.4383

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