Document Search Results

Camiola, Vito Dario; Mascali, Giovanni; Romano, Vittorio

Charge transport in low dimensional semiconductor structures. The maximum entropy approach. (English) Zbl 1447.82002

Mathematics in Industry 31. The European Consortium for Mathematics in Industry. Cham: Springer (ISBN 978-3-030-35992-8/hbk; 978-3-030-35993-5/ebook). xvi, 337 p. (2020).

Reviewer: Eugene Postnikov (Kursk)

MSC: 82-02 82D37 82D80 35Q82 35Q55 35Q20

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Antoniades, I. P.; Marinos, G.; Karakatsanis, L. P.; Pavlos, E. G.; Stavrinides, S. G.; Tassis, D.; Pavlos, G. P.

Tsallis non-extensive statistics and multifractal analysis of the dynamics of a fully-depleted MOSFET nano-device. (English) Zbl 07570001

Physica A 533, Article ID 121820, 21 p. (2019).

MSC: 82-XX

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Büchl, D.; Kemmetmüller, W.; Glück, T.; Deutschmann, B.; Kugi, A.

A dynamic model of power metal-oxide-semiconductor field-effect transistor half-bridges for the fast simulation of switching induced electromagnetic emissions. (English) Zbl 1500.82019

Math. Comput. Model. Dyn. Syst. 25, No. 3, 242-260 (2019).

MSC: 82D37 78A55 94C05

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Blokhin, Alexander; Semisalov, Boris

A new approach to numerical simulation of charge transport in double gate-MOSFET. (English) Zbl 1429.65236

Appl. Math. Comput. 342, 206-223 (2019).

MSC: 65M70 65M12 82D37

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Cumberbatch, Ellis; Llewellyn Smith, Stefan G.

Current/voltage characteristics of the short-channel double-gate transistor. I. (English) Zbl 1392.82060

SIAM J. Appl. Math. 78, No. 2, 877-896 (2018).

Reviewer: Vladimir Čadež (Beograd)

MSC: 82D37 35Q60 82D20 78A35 35J47 35B40

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Barrera, D.; Ibáñez, M. J.; Roldán, A. M.; Roldán, J. B.; Yáñez, R.

Polynomial pattern finding in scattered data. (English) Zbl 1372.82042

J. Comput. Appl. Math. 318, 107-116 (2017).

Reviewer: Rózsa Horváth-Bokor (Budakalász)

MSC: 82D37 82-08 41A50 65C60

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Ibáñez, M. J.; Roldán, J. B.; Roldán, A. M.; Yáñez, R.

A comprehensive characterization of the threshold voltage extraction in MOSFETs transistors based on smoothing splines. (English) Zbl 1533.94085

Math. Comput. Simul. 102, 1-10 (2014).

MSC: 94C05 65D07 65D10

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Blokhin, A. M.; Semisalov, B. V.

On an algorithm for finding the electric potential distribution in the DG-MOSFET transistor. (Russian, English) Zbl 1299.82019

Zh. Vychisl. Mat. Mat. Fiz. 53, No. 6, 979-1003 (2013); translation in Comput. Math. Math. Phys. 53, No. 6, 798-822 (2013).

MSC: 82D37

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Bensegueni, Rachida; Latreche, Saida

Numerical solution of drift diffusion equations using 2D finite difference method: application to a strained MOSFET device. (English) Zbl 1285.82050

Univers. J. Math. Math. Sci. 4, No. 1, 119-133 (2013).

Reviewer: Alexander Mikhajlovich Blokhin (Novosibirsk)

MSC: 82D37 82-08 65N06 65F10

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Liu, Linlin; Li, Zunchao

A quantum-confinement model for surrounding-gate MOSFETS from subthreshold to strong-inversion regions. (English) Zbl 1270.81103

Sci. China, Inf. Sci. 55, No. 10, 2399-2408 (2012).

MSC: 81Q80

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Li, Pei-Cheng; Mei, Guang-Hui; Hu, Guang-Xi; Wang, Ling-Li; Liu, Ran; Tang, Ting-Ao

Effects of unintended dopants on I-V characteristics of the double-gate MOSFETS, a simulation study. (English) Zbl 1263.82064

Commun. Theor. Phys. 58, No. 1, 171-174 (2012).

MSC: 82D37 82C70 35J08

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Nassar, Christopher J.; Revelli, Joseph F.; Bowman, Robert J.

Application of the homotopy analysis method to the Poisson-Boltzmann equation for semiconductor devices. (English) Zbl 1221.82139

Commun. Nonlinear Sci. Numer. Simul. 16, No. 6, 2501-2512 (2011).

MSC: 82D37 65L99

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Moldovan, Oana; Chaves, Ferney A.; Jiménez, David; Raskin, Jean-Pierre; Iñiguez, Benjamin

Accurate prediction of the volume inversion impact on undoped double gate MOSFET capacitances. (English) Zbl 1204.78017

Int. J. Numer. Model. 23, No. 6, 447-457 (2010).

MSC: 78A55 78A35

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Matsumoto, Fujihiko; Kitajima, Teruoki; Yachidate, Akira; Noguchi, Yasuaki

A new technique to improve linearity of a transconductor with local feedback. (English) Zbl 1193.94081

Far East J. Electron. Commun. 4, No. 1, 77-89 (2010).

MSC: 94C05

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Monga, U.; Børli, H.; Fjeldly, T. A.

Compact subthreshold current and capacitance modeling of short-channel double-gate MOSFETs. (English) Zbl 1193.82055

Math. Comput. Modelling 51, No. 7-8, 901-907 (2010).

MSC: 82D37 94C30

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Morris, Hedley C.; Abebe, Henok

A compact quantum surface potential model for a MOSFET device. (English) Zbl 1193.82056

Math. Comput. Modelling 51, No. 7-8, 893-900 (2010).

MSC: 82D37

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Minari, Hideki; Mori, Nobuya

A computationally cost-effective interleaving method for atomistic non-equilibrium Green’s function simulation. (English) Zbl 1193.82054

Math. Comput. Modelling 51, No. 7-8, 888-892 (2010).

MSC: 82D37 82C80

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Li, Yiming

Monotone iterative method for numerical solution of nonlinear ODEs in MOSFET RF circuit simulation. (English) Zbl 1190.94045

Math. Comput. Modelling 51, No. 3-4, 320-328 (2010).

MSC: 94C05 65L10

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Jiang, Haiyan; Cai, Wei

Effect of boundary treatments on quantum transport current in the Green’s function and Wigner distribution methods for a nano-scale DG-MOSFET. (English) Zbl 1191.82042

J. Comput. Phys. 229, No. 12, 4461-4475 (2010).

MSC: 82C70 82D37 82D80

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Chen, Duan; Wei, Guo-Wei

Modeling and simulation of electronic structure, material interface and random doping in nano-electronic devices. (English) Zbl 1191.82113

J. Comput. Phys. 229, No. 12, 4431-4460 (2010).

MSC: 82D37 82D80 82C70 82B24 35Q55

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Alvarado, Joaquín; Iñiguez, Benjamin; Estrada, Magali; Flandre, Denis; Cerdeira, Antonio

Implementation of the symmetric doped double-gate MOSFET model in Verilog-A for circuit simulation. (English) Zbl 1183.78001

Int. J. Numer. Model. 23, No. 2, 88-106 (2010).

MSC: 78-04 94C05

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Shlimak, I.; Golosov, D. I.; Butenko, A.; Friedland, K.-J.; Kravchenko, S. V.

Conductance asymmetry of a slot gate Si-MOSFET in a strong parallel magnetic field. (English) Zbl 1180.82207

Ann. Phys. (8) 18, No. 12, 913-917 (2009).

MSC: 82D37

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Gopal, Srinivasan; Lai, Ying-Cheng

Inducing chaos in MOSFET-based electronic circuits. (English) Zbl 1170.94345

Circuits Syst. Signal Process. 28, No. 4, 535-545 (2009).

MSC: 94C05 37D45

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Chaujar, Rishu; Kaur, Ravneet; Saxena, Manoj; Gupta, Mridula; Gupta, R. S.

Investigation of multi-layered-gate electrode workfunction engineered recessed channel (MLGEWE-RC) sub-50 nm MOSFET: A novel design. (English) Zbl 1162.82324

Int. J. Numer. Model. 22, No. 3, 259-278 (2009).

MSC: 82D37 78A55

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Avci, M.

Neural network-based design approach for submicron MOS integrated circuits. (English) Zbl 1159.82327

Math. Comput. Simul. 79, No. 4, 1126-1136 (2008).

MSC: 82D37 82B80 68T05

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Morris, Hedley C.; Limon, Alfonso

A compact model for the \(I\)-\(V\) characteristics of an undoped double-gate MOSFET. (English) Zbl 1159.82332

Math. Comput. Simul. 79, No. 4, 1116-1125 (2008).

MSC: 82D37 82B80

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Kolberg, S.; Børli, H.; Fjeldly, T. A.

Modeling, verification and comparison of short-channel double gate and gate-all-around MOSFETs. (English) Zbl 1159.82331

Math. Comput. Simul. 79, No. 4, 1107-1115 (2008).

MSC: 82D37 78A30

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Ezaki, T.; Navarro, D.; Takeda, Y.; Sadachika, N.; Suzuki, G.; Miura-Mattausch, M.; Mattausch, H. J.; Ohguro, T.; Iizuka, T.; Taguchi, M.; Kumashiro, S.; Miyamoto, S.

Non-quasi-static approach with surface-potential-based MOSFET model HiSIM for RF circuit simulations. (English) Zbl 1159.82329

Math. Comput. Simul. 79, No. 4, 1096-1106 (2008).

MSC: 82D37 82C80

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Xiao, DeYuan; Chen, Gary; Lee, Roger; Liu, Yung; Shen, ChiCheong

Planar split dual gate MOSFET. (English) Zbl 1155.82343

Sci. China, Ser. F. 51, No. 4, 440-448 (2008).

MSC: 82D37

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Jiang, Haiyan; Shao, Sihong; Cai, Wei; Zhang, Pingwen

Boundary treatments in non-equilibrium Green’s function (NEGF) methods for quantum transport in nano-MOSFETs. (English) Zbl 1151.82395

J. Comput. Phys. 227, No. 13, 6553-6573 (2008).

MSC: 82C70 82D37 65N06 65N30

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Fixel, D. A.; Hitchon, W. N. G.

Convective scheme solution of the Boltzmann transport equation for nanoscale semiconductor devices. (English) Zbl 1141.82018

J. Comput. Phys. 227, No. 2, 1387-1410 (2007).

Reviewer: Jacek Banasiak (Durban)

MSC: 82D37 82C99 82C80

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Munteanu, D.; Autran, J. L.; Loussier, X.; Harrison, S.; Cerutti, R.

Compact modeling of symmetrical double-gate mosfets including carrier confinement and short-channel effects. (English) Zbl 1142.94399

Mol. Simul. 33, No. 6-8, 605-611 (2007).

MSC: 94C10

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Full Text: DOI HAL

Cáceres, M. J.; Carrillo, J. A.; Gamba, I. M.; Majorana, A.; Shu, C.-W.

Deterministic kinetic solvers for charged particle transport in semiconductor devices. (English) Zbl 1203.82109

Cercignani, Carlo (ed.) et al., Transport phenomena and kinetic theory. Applications to gases, semiconductors, photons, and biological systems. Boston, MA: Birkhäuser (ISBN 978-0-8176-4489-5/hbk). Modeling and Simulation in Science, Engineering and Technology, 151-171 (2007).

MSC: 82D37 82C70 78A15 76P05 82C80

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Li, Szu-Ju; Dai, Jing-Fu; Chang, Chia-Cherng; Huang, Chau-Hsin; Tsai, Yao-Tsung

Development of 3-D equivalent-circuit modelling with decoupled L-ILU factorization in semiconductor-device simulation. (English) Zbl 1119.82041

Int. J. Numer. Model. 20, No. 3, 133-148 (2007).

Reviewer: Andreas Knorr (Berlin)

MSC: 82D37 94C30

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Romano, V.

2D numerical simulation of the MEP energy-transport model with a finite difference scheme. (English) Zbl 1216.82035

J. Comput. Phys. 221, No. 2, 439-468 (2007).

MSC: 82C70 82D37 65M06 76X05

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Anile, A. M.; Marrocco, A.; Romano, V.; Sellier, J. M.

Mixed finite element numerical simulation of a 2D silicon MOSFET with the non-parabolic MEP energy-transport model. (English) Zbl 1157.78307

Anile, Angelo Marcello (ed.) et al., Scientific computing in electrical engineering. Proceedings of the 5th international conference on scientific computing in electrical engineering (SCEE), Capo D’Orlando, Sicily, Italy, September 5–9, 2004. Berlin: Springer (ISBN 3-540-32861-0/hbk). Mathematics in Industry 9, 277-282 (2006).

MSC: 78A35 78M10

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Abdolkader, Tarek M.; Farouk, Wael Fikry; Omar, O. A.; Hassan, Mahmoud Fathy Mahmoud

FETMOSS: a software tool for 2D simulation of double-gate MOSFET. (English) Zbl 1107.82400

Int. J. Numer. Model. 19, No. 4, 301-314 (2006).

MSC: 82D37 82-08 65N06 65N30

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Li, Yiming; Yu, Shao-Ming; Wang, Chuan-Sheng

Monotone iterative method for numerical solution of nonlinear ODEs in MOSFET RF circuit simulation. (English) Zbl 1170.65322

Maroulis, George (ed.) et al., In the frontiers of computational science. Lectures presented in the international conference of computational methods in science and engineering (ICCMSE 2005), Corinth, Greece, October 21–26, 2005. Utrecht: VSP (ISBN 90-6764-442-0/pbk). Lecture Series on Computer and Computational Sciences 3, 333-342 (2006).

MSC: 65L05

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Prégaldiny, Fabien; Krummenacher, François; Diagne, Birahim; Pêcheux, François; Sallese, Jean-Michel; Lallement, Christophe

Explicit modelling of the double-gate MOSFET with VHDL-AMS. (English) Zbl 1089.78510

Int. J. Numer. Model. 19, No. 3, 239-256 (2006).

MSC: 78M25

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Carrillo, José A.; Gamba, Irene M.; Majorana, Armando; Shu, Chi-Wang

2D semiconductor device simulations by WENO-Boltzmann schemes: efficiency, boundary conditions and comparison to Monte Carlo methods. (English) Zbl 1098.82033

J. Comput. Phys. 214, No. 1, 55-80 (2006).

Reviewer: Oleg A. Sinkevich (Moskva)

MSC: 82D37 82C70 82-08

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Grado-Caffaro, M. A.; Grado-Caffaro, M.

A quantitative study on tunneling conductivity of a floating-gate MOSFET in terms of the oxide-layer width. (English) Zbl 1175.82075

Mod. Phys. Lett. B 19, No. 21, 1035-1037 (2005).

MSC: 82D37

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He, J.; Chan, M. S.; Hu, C.; Zhang, X.; Wang, Y. Y.

A compact model to predict quantized sub-band energy levels and inversion layer centroids of MOSFETs with a parabolic potential well approximation. (English) Zbl 1079.82020

Mol. Simul. 31, No. 12, 845-850 (2005).

Reviewer: Michael Baro (Berlin)

MSC: 82D37 82D20

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Munteanu, D.; Autran, J. L.; Harrison, S.; Nehari, K.; Tintori, O.; Skotnicki, T.

Compact model of the quantum short-channel threshold voltage in symmetric double-gate MOSFET. (English) Zbl 1077.81549

Mol. Simul. 31, No. 12, 831-837 (2005).

MSC: 81V55 81T80

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Kim, K.-D.; Won, T.-Y.

2D quantum mechanical device modeling and simulation: centre-channel (CC) and double-gate (DG) MOSFET. (English) Zbl 1077.81548

Mol. Simul. 31, No. 12, 825-830 (2005).

MSC: 81V55 81T80

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Itoh, Nobuyuki; Kojima, Kenji; Ohguro, Tatsuya

Journal home. (English) Zbl 1068.78509

Int. J. Numer. Model. 18, No. 4, 255-266 (2005).

MSC: 78A55

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Chang, Chia-Cherng; Li, Szu-Ju; Tsai, Yao-Tsung

Device-partition method using equivalent circuit model in two-dimensional device simulation. (English) Zbl 1154.78321

Int. J. Numer. Model. 18, No. 3, 203-219 (2005).

MSC: 78M25 94C05

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Prégaldiny, Fabien; Lallement, Christophe

Fourth generation MOSFET model and its VHDL-AMS implementation. (English) Zbl 1065.78512

Int. J. Numer. Model. 18, No. 1, 39-48 (2005).

MSC: 78A55

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Holst, Stefan; Jüngel, Ansgar; Pietra, Paola

An adaptive mixed scheme for energy-transport simulations of field-effect transistors. (English) Zbl 1073.82626

SIAM J. Sci. Comput. 25, No. 5, 1698-1716 (2004).

MSC: 82D37 78A35 65N30

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Cumberbatch, Ellis; Abebe, Henok; Morris, Hedley

Current-voltage characteristics from an asymptotic analysis of the MOSFET equations. (English) Zbl 0983.82024

J. Eng. Math. 39, No. 1-4, 25-46 (2001).

Reviewer: Yves Cherruault (Paris)

MSC: 82D37 80A22 35Q99

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Grzesik, Boguslav; Kaczmarczyk, Zbigniew; Junak, Jacek

The simplified model of the class \(E\) inverter with the PWL model of the MOSFET turn off. (English) Zbl 0876.65080

COMPEL 16, No. 2, 84-91 (1997).

MSC: 65Z05 78A55 35Q60

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Khamayseh, Ahmed; Kuprat, Andrew

Anisotropic smoothing and solution adaption for unstructured grids. (English) Zbl 0873.73080

Int. J. Numer. Methods Eng. 39, No. 18, 3163-3174 (1996).

MSC: 74S99 65N50

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Full Text: DOI

Sarvas, J.; Spanier, J.

A direct approach to solving the drift-diffusion model equations for use in certain MOSFET devices. (English) Zbl 0835.65152

Math. Comput. Modelling 22, No. 8, 17-31 (1995).

MSC: 65Z05 35Q60 78A55

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Laux, Steven E.; Fischetti, Massimo V.

Numerical aspects and implementation of the DAMOCLES Monte Carlo device simulation program. (English) Zbl 0768.65081

Monte Carlo device simulation: Full band and beyond, Kluwer Int. Ser. Eng. Comput. Sci. 144, 1-26 (1991).

Reviewer: B.Mathiszik (Halle)

MSC: 65Z05 65C05 82C70

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Cumberbatch, Ellis

Case studies from The Claremont Mathematics Clinic. (English) Zbl 0900.00024

Capasso, V. (ed.) et al., Mathematical methods for industrial problems. Proceedings of the international workshop held in Tecnopolis, Bari, Italy, September 3-5, 1988. Utrecht: VSP. 25-33 (1990).

MSC: 00A69

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Gribben, R. J.; Martelli, M.

Optimal parameter extraction of the Brews charge-sheet MOSFET model. (English) Zbl 0833.00009

Math. Eng. Ind. 1, No. 2, 155-168 (1987).

MSC: 00A69 90C90 90C30

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Bank, R. E.; Mittelmann, H. D.

Continuation and multi-grid for nonlinear elliptic systems. (English) Zbl 0605.65066

Multigrid methods II, Proc. 2nd Eur. Conf., Cologne/Ger. 1985, Lect. Notes Math. 1228, 23-37 (1986).

MSC: 65N22 65H10 35J65

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Sussman-Fort, S. E.; Mayaram, K.

On the implementation of general four-terminal DC device models in SPICE. (English) Zbl 0561.94019

Circuits Syst. Signal Process. 3, 435-445 (1984).

MSC: 94C99 94-04

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Full Text: DOI

Found 57 Documents (Results 1–57)

Charge transport in low dimensional semiconductor structures. The maximum entropy approach. (English) Zbl 1447.82002

Tsallis non-extensive statistics and multifractal analysis of the dynamics of a fully-depleted MOSFET nano-device. (English) Zbl 07570001

A dynamic model of power metal-oxide-semiconductor field-effect transistor half-bridges for the fast simulation of switching induced electromagnetic emissions. (English) Zbl 1500.82019

A new approach to numerical simulation of charge transport in double gate-MOSFET. (English) Zbl 1429.65236

Current/voltage characteristics of the short-channel double-gate transistor. I. (English) Zbl 1392.82060

Polynomial pattern finding in scattered data. (English) Zbl 1372.82042

A comprehensive characterization of the threshold voltage extraction in MOSFETs transistors based on smoothing splines. (English) Zbl 1533.94085

On an algorithm for finding the electric potential distribution in the DG-MOSFET transistor. (Russian, English) Zbl 1299.82019

Numerical solution of drift diffusion equations using 2D finite difference method: application to a strained MOSFET device. (English) Zbl 1285.82050

A quantum-confinement model for surrounding-gate MOSFETS from subthreshold to strong-inversion regions. (English) Zbl 1270.81103

Effects of unintended dopants on I-V characteristics of the double-gate MOSFETS, a simulation study. (English) Zbl 1263.82064

Application of the homotopy analysis method to the Poisson-Boltzmann equation for semiconductor devices. (English) Zbl 1221.82139

Accurate prediction of the volume inversion impact on undoped double gate MOSFET capacitances. (English) Zbl 1204.78017

A new technique to improve linearity of a transconductor with local feedback. (English) Zbl 1193.94081

Compact subthreshold current and capacitance modeling of short-channel double-gate MOSFETs. (English) Zbl 1193.82055

A compact quantum surface potential model for a MOSFET device. (English) Zbl 1193.82056

A computationally cost-effective interleaving method for atomistic non-equilibrium Green’s function simulation. (English) Zbl 1193.82054

Monotone iterative method for numerical solution of nonlinear ODEs in MOSFET RF circuit simulation. (English) Zbl 1190.94045

Effect of boundary treatments on quantum transport current in the Green’s function and Wigner distribution methods for a nano-scale DG-MOSFET. (English) Zbl 1191.82042

Modeling and simulation of electronic structure, material interface and random doping in nano-electronic devices. (English) Zbl 1191.82113

Implementation of the symmetric doped double-gate MOSFET model in Verilog-A for circuit simulation. (English) Zbl 1183.78001

Conductance asymmetry of a slot gate Si-MOSFET in a strong parallel magnetic field. (English) Zbl 1180.82207

Inducing chaos in MOSFET-based electronic circuits. (English) Zbl 1170.94345

Investigation of multi-layered-gate electrode workfunction engineered recessed channel (MLGEWE-RC) sub-50 nm MOSFET: A novel design. (English) Zbl 1162.82324

Neural network-based design approach for submicron MOS integrated circuits. (English) Zbl 1159.82327

A compact model for the \(I\)-\(V\) characteristics of an undoped double-gate MOSFET. (English) Zbl 1159.82332

Modeling, verification and comparison of short-channel double gate and gate-all-around MOSFETs. (English) Zbl 1159.82331

Non-quasi-static approach with surface-potential-based MOSFET model HiSIM for RF circuit simulations. (English) Zbl 1159.82329

Planar split dual gate MOSFET. (English) Zbl 1155.82343

Boundary treatments in non-equilibrium Green’s function (NEGF) methods for quantum transport in nano-MOSFETs. (English) Zbl 1151.82395

Convective scheme solution of the Boltzmann transport equation for nanoscale semiconductor devices. (English) Zbl 1141.82018

Compact modeling of symmetrical double-gate mosfets including carrier confinement and short-channel effects. (English) Zbl 1142.94399

Deterministic kinetic solvers for charged particle transport in semiconductor devices. (English) Zbl 1203.82109

Development of 3-D equivalent-circuit modelling with decoupled L-ILU factorization in semiconductor-device simulation. (English) Zbl 1119.82041

2D numerical simulation of the MEP energy-transport model with a finite difference scheme. (English) Zbl 1216.82035

Mixed finite element numerical simulation of a 2D silicon MOSFET with the non-parabolic MEP energy-transport model. (English) Zbl 1157.78307

FETMOSS: a software tool for 2D simulation of double-gate MOSFET. (English) Zbl 1107.82400

Monotone iterative method for numerical solution of nonlinear ODEs in MOSFET RF circuit simulation. (English) Zbl 1170.65322

Explicit modelling of the double-gate MOSFET with VHDL-AMS. (English) Zbl 1089.78510

2D semiconductor device simulations by WENO-Boltzmann schemes: efficiency, boundary conditions and comparison to Monte Carlo methods. (English) Zbl 1098.82033

A quantitative study on tunneling conductivity of a floating-gate MOSFET in terms of the oxide-layer width. (English) Zbl 1175.82075

A compact model to predict quantized sub-band energy levels and inversion layer centroids of MOSFETs with a parabolic potential well approximation. (English) Zbl 1079.82020

Compact model of the quantum short-channel threshold voltage in symmetric double-gate MOSFET. (English) Zbl 1077.81549

2D quantum mechanical device modeling and simulation: centre-channel (CC) and double-gate (DG) MOSFET. (English) Zbl 1077.81548

Journal home. (English) Zbl 1068.78509

Device-partition method using equivalent circuit model in two-dimensional device simulation. (English) Zbl 1154.78321

Fourth generation MOSFET model and its VHDL-AMS implementation. (English) Zbl 1065.78512

An adaptive mixed scheme for energy-transport simulations of field-effect transistors. (English) Zbl 1073.82626

Current-voltage characteristics from an asymptotic analysis of the MOSFET equations. (English) Zbl 0983.82024

The simplified model of the class \(E\) inverter with the PWL model of the MOSFET turn off. (English) Zbl 0876.65080

Anisotropic smoothing and solution adaption for unstructured grids. (English) Zbl 0873.73080

A direct approach to solving the drift-diffusion model equations for use in certain MOSFET devices. (English) Zbl 0835.65152

Numerical aspects and implementation of the DAMOCLES Monte Carlo device simulation program. (English) Zbl 0768.65081

Case studies from The Claremont Mathematics Clinic. (English) Zbl 0900.00024

Optimal parameter extraction of the Brews charge-sheet MOSFET model. (English) Zbl 0833.00009

Continuation and multi-grid for nonlinear elliptic systems. (English) Zbl 0605.65066

On the implementation of general four-terminal DC device models in SPICE. (English) Zbl 0561.94019

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