Summary: The Mixed Finite Element scheme presented in P. A. Raviart and J. M. Thomas [In: I. Galligani and E. Magenes (eds) Mathematical Aspects of Finite Element methods, Lecture Notes 606. Springer Verlag: Berlin, Heidelberg, New York, 362 pp (1977; Zbl 0347.00007)], A. Marrocco and Ph. Montarnal [C. R. Acad. Sci., Paris, Sér. I 323, No.5, 535–541 (1996; Zbl 0858.65111)] is used to simulate a 2D silicon MOSFET with a consistent energy-transport model for electron in semiconductors, free of any fitting parameters, formulated on the basis of the maximum entropy principle (MEP) in A. M. Anile and V. Romano [Contin. Mech. Thermodyn. 11, No. 5, 307–325 (1999; Zbl 1080.82584)], V. Romano [Contin. Mech. Thermodyn. 12, No.1, 31–51 (2000; Zbl 0962.82085)], V. Romano [Math. Methods Appl. Sci. 24, No.7, 439–471 (2001; Zbl 0981.35040)] and A. M. Anile, G. Mascali and V. Romano [Recent developments in hydrodynamical modeling of semiconductors. In: Anile, A. M. (ed.), Mathematical problems in semiconductor physics. Lectures given at the C.I.M.E. summer school, Cetraro, Italy, July 15–22, 1998. With the collaboration of G. Mascali and V. Romano. Berlin: Springer. Lect. Notes Math. 1823, 1–56 (2003; Zbl 1036.82027)]. Comparison with MC data shows the superiority of the model with respect to the standard models known in literature.
For the entire collection see [Zbl 1096.00002].