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Semiconductor full quantum hydrodynamic model with non-flat doping profile. I: Stability of steady state. (English) Zbl 1527.35420

Summary: This is the first part of our series of studies concerning the full quantum hydrodynamic model for semiconductors with non-flat doping profile. In this paper, we are concerned with the existence, uniqueness and asymptotic stability of subsonic steady states to the model in a bounded interval, which is subject to physical boundary conditions. The main results are proved by Stampacchia’s truncation method, the Leray-Schauder Fixed Point Theorem, Schauder’s Fixed Point Theorem and intricate energy estimates.

MSC:

35Q81 PDEs in connection with semiconductor devices
82D37 Statistical mechanics of semiconductors
35A01 Existence problems for PDEs: global existence, local existence, non-existence
35A02 Uniqueness problems for PDEs: global uniqueness, local uniqueness, non-uniqueness
35B35 Stability in context of PDEs
35B40 Asymptotic behavior of solutions to PDEs
35M33 Initial-boundary value problems for mixed-type systems of PDEs
76Y05 Quantum hydrodynamics and relativistic hydrodynamics
76G25 General aerodynamics and subsonic flows
47H10 Fixed-point theorems
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