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Galler, M.; Schürrer, F.

A deterministic solver for the transport of the AlGaN/GaN 2D electron gas including hot-phonon and degeneracy effects. (English) Zbl 1083.82528

J. Comput. Phys. 210, No. 2, 519-534 (2005).
Summary: The transport of the two-dimensional electron gas formed at an AlGaN/GaN heterostructure in the presence of strain polarization fields is investigated. For this purpose, we develop a deterministic multigroup model to the Boltzmann transport equations. The envelope wave functions for the confined electrons are calculated using a self-consistent Poisson-Schrödinger solver. The electron gas degeneracy and hot phonons are included in our transport equations. Numerical results are given for the dependence of macroscopic quantities on the electric field strength and on time and for the electron and phonon distribution functions. We compare our results to those of Monte Carlo simulations and with experiments.

Cited in 3 Documents

MSC:

82C40 Kinetic theory of gases in time-dependent statistical mechanics
82C80 Numerical methods of time-dependent statistical mechanics (MSC2010)
76P05 Rarefied gas flows, Boltzmann equation in fluid mechanics

Keywords:

AlGaN/GaN heterostructure; multigroup model; hot phonon effects; Boltzmann transport equation; Poisson-Schrödinger solver; Bloch-Boltzmann-Peierls equation
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References:

[1] Morkoç, H., Nitride Semiconductors and Devices (1999), Springer: Springer Heidelberg
[2] Ramonas, M.; Matulionis, A.; Rota, L., Monte Carlo simulation of hot-phonon and degeneracy effects in the AlGaN/GaN two-dimensional electron gas channel, Semicond. Sci. Technol., 18, 118 (2003)
[3] Ferry, D. K.; Goodnick, S. M., Transport in Nanostructures (1997), Cambridge University Press: Cambridge University Press Cambridge
[4] Lifschitz, E. M.; Pitaevskii, L. P., Physical Kinetics (1981), Pergamon Press: Pergamon Press Oxford
[5] Galler, M.; Schürrer, F., A deterministic solution approach for the coupled system of transport equations for the electrons and phonons in polar semiconductors, J. Phys. A. Math. Gen., 37, 1479 (2003) · Zbl 1053.82034
[6] Galler, M.; Schürrer, F., Multigroup equations to the hot-electron hot-phonon system in III-V compound semiconductors, Comput. Methods Appl. Mech. Engrg., 194, 2806 (2005) · Zbl 1136.82364
[7] Ziman, J. M., Electrons and Phonons (2001), Clarendon Press: Clarendon Press Oxford · Zbl 0983.82002
[8] Kolnik, J.; Oguzman, I. H.; Brennan, K. F.; Wang, R.; Ruden, P. P.; Wang, Y., Electronic transport studies of bulk zincblende and wurtzite phases of GaN based on an ensemble Monte Carlo calculation including a full zone bandstructure, J. Appl. Phys., 78, 1033 (1995)
[9] Hutson, A. R., Piezoelectric scattering and phonon drag in ZnO and CdS, J. Appl. Phys., 32, 2287 (1961)
[10] Goodnick, S. M.; Lugli, P., Influence of electron-hole scattering on subpicosecond carrier relaxation in \(Al_xGa_{1−x}As\)/GaAs quantum wells, Phys. Rev. B, 38, 10135 (1988)
[11] Bulutay, C.; Ridley, B. K.; Zakhleniuk, N. A., Full band polar optical phonon scattering analysis and negative differential conductivity in wurtzite GaN, Phys. Rev. B, 62, 15754 (2000)
[12] Price, P. J., Two-dimensional electron transport in semiconductor layers. I. Phonon scattering, Ann. Phys., 133, 217 (1981)
[13] LeVeque, R. J., Numerical Methods for Conservation Laws (1992), Birkhäuser: Birkhäuser Basel · Zbl 0847.65053
[14] Gaska, R.; Yang, J. W.; Osinsky, A.; Chen, Q.; Khan, M. A.; Orlov, A. O.; Snider, G. L.; Shur, M. S., Electron transport in AlGaN-GaN heterostructures grown on 6H-SiC substrates, Appl. Phys. Lett., 72, 707 (1998)
[15] O’Leary, S. K.; Foutz, B. E.; Shur, M. S.; Bhapkar, U. V.; Eastman, L. F., Electron transport in wurtzite indium nitride, J. Appl. Phys., 83, 826 (1998)
[16] Ambacher, O.; Smart, J.; Shealy, J. R.; Weimann, N. G.; Chu, K.; Murphy, M.; Dimitrov, R.; Wittmer, L.; Stutzmann, M.; Rieger, W.; Hilsenbeck, J., Two-dimensional electron gases induced by spontaneous and piezoelectric polarization in N- and Ga-face AlGaN/GaN heterostructures, J. Appl. Phys., 85, 3222 (1999)
[17] Ridley, B. K.; Foutz, B. E.; Eastman, L. F., Mobility of electrons in bulk GaN and \(Al_xGa_{1−x}N\)/GaN heterostructures, Phys. Rev. B, 61, 16862 (2000)
[18] Matulionis, A.; Liberis, J.; Ardaravičus, L.; Ramonas, M.; Zubkutė, T.; Matulionienė, I.; Eastman, F.; Shealy, J. R.; Smart, J., Fast and ultrafast processes in AlGaN/GaN channels, Phys. Stat. Sol. b, 234, 826 (2002)
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