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Mock, M. S.

Asymptotic behavior of solutions of transport equations for semiconductor devices. (English) Zbl 0298.35033

J. Math. Anal. Appl. 49, 215-225 (1975).
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Cited in 45 Documents

MSC:

35K50 Systems of parabolic equations, boundary value problems (MSC2000)
35K45 Initial value problems for second-order parabolic systems
35B40 Asymptotic behavior of solutions to PDEs
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References:

[1] De Mari, A., An accurate numerical one-dimensional solution of the \(p-n\) junction under arbitrary transient conditions, Solid State Electronics, 11, 1021-1053 (1968)
[2] Gokhale, B. V., Numerical solutions for the one-dimensional silican \(n-p-n\) transitor, IEEE Trans. Elec. Dev, ED-17, 594-602 (1970)
[3] Hachtel, G. D.; Joy, R. C.; Cooley, J. W., A new efficient one-dimensional analysis program for junction device modeling, (Proc. IEEE, 60 (1972)), 86-98
[4] Mock, M. S., On equations describing steady-state carrier distributions in a semiconductor device, Comm. Pure Appl. Math., 25, 781-792 (1972)
[5] M. S. MockSIAM J. Math. Anal.; M. S. MockSIAM J. Math. Anal. · Zbl 0254.35020
[6] Moll, J. L., Physics of Semiconductors (1964), McGraw-Hill: McGraw-Hill New York · Zbl 0151.45902
[7] Van Roosbroeck, W., Theory of the flow of electrons and holes in germanium and other semiconductors, Bell Sys. Tech. J., 29, 560-607 (1950) · Zbl 1372.35295
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