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This paper presents the fabrication and characterization of superconducting qubit components from titanium nitride (TiN) and aluminum nitride (AlN) layers to create Josephson junctions and superconducting resonators in an all-nitride architecture. Our methodology comprises a complete process flow for the fabrication of TiN/AlN/TiN junctions, characterized by scanning electron microscopy (SEM), atomic force microscopy (AFM), ellipsometry and DC electrical measurements. We evaluated the sputtering rates of AlN under varied conditions, the critical temperatures of TiN thin films for different sputtering environments, and the internal quality factors of TiN resonators in the few-GHz regime, fabricated from these films. Overall, this offered insights into the material properties critical to qubit performance. Measurements of the dependence of the critical current of the TiN / AlN / TiN junctions yielded values ranging from 150 ${\mu}$A to 2 ${\mu}$A, for AlN barrier thicknesses up to ca. 5 nm, respectively. Our findings demonstrate advances in the fabrication of nitride-based superconducting qubit components, which may find applications in quantum computing technologies based on novel materials.

Superconducting qubits are a promising platform for large-scale quantum computing. Besides the Josephson junction, most parts of a superconducting qubit are made of planar, patterned superconducting thin films. In the past, most qubit architectures have relied on niobium (Nb) as the material of choice for the superconducting layer. However, there is also a variety of alternative materials with potentially less losses, which may thereby result in increased qubit performance. One such material is tantalum (Ta), for which high-performance qubit components have already been demonstrated. In this study, we report the sputter-deposition of Ta thin films directly on heated and unheated silicon (Si) substrates as well as onto different, nanometer-thin seed layers from tantalum nitride (TaN), titanium nitride (TiN) or aluminum nitride (AlN) that were deposited first. The thin films are characterized in terms of surface morphology, crystal structure, phase composition, critical temperature, residual resistance ratio (RRR) and RF-performance. We obtain thin films indicative of pure alpha-Ta for high temperature (600\degC) sputtering directly on silicon and for Ta deposited on TaN or TiN seed layers. Coplanar waveguide (CPW) resonator measurements show that the Ta deposited directly on the heated silicon substrate performs best with internal quality factors $Q_i$ reaching 1 x $10^6$ in the single-photon regime, measured at $T=100 {\space \rm mK}$.

We study monolayer WSe2 using ultrafast electron diffraction. We introduce an approach to quantitatively extract atomic-site-specific information, providing an element-specific view of incoherent atomic vibrations following femtosecond excitation. Via differences between W and Se vibrations, we identify stages in the nonthermal evolution of the lattice. Combined with a calculated phonon dispersion, this element specificity enables us to identify a long-lasting overpopulation of specific optical phonons, and to interpret the stages as energy transfer processes between specific phonon groups. These results demonstrate the appeal of resolving element-specific vibrational information in the ultrafast time domain.

Optical manipulation of magnetism holds promise for future ultrafast spintronics, especially with lanthanides and their huge, localized 4f magnetic moments. These moments interact indirectly via the conduction electrons (RKKY exchange), influenced by interatomic orbital overlap, and the conduction electron susceptibility. Here, we study this influence in a series of 4f antiferromagnets, GdT2Si2 (T=Co, Rh, Ir), using ultrafast resonant X-ray diffraction. We observe a twofold increase in ultrafast angular momentum transfer between the materials, originating from modifications in the conduction electron susceptibility, as confirmed by first-principles calculations.

In the rapidly expanding field of two-dimensional materials, magnetic monolayers show great promise for the future applications in nanoelectronics, data storage, and sensing. The research in intrinsically magnetic two-dimensional materials mainly focuses on synthetic iodide and telluride based compounds, which inherently suffer from the lack of ambient stability. So far, naturally occurring layered magnetic materials have been vastly overlooked. These minerals offer a unique opportunity to explore air-stable complex layered systems with high concentration of local moment bearing ions. We demonstrate magnetic ordering in iron-rich two-dimensional phyllosilicates, focusing on mineral species of minnesotaite, annite, and biotite. These are naturally occurring van der Waals magnetic materials which integrate local moment baring ions of iron via magnesium/aluminium substitution in their octahedral sites. Due to self-inherent capping by silicate/aluminate tetrahedral groups, ultra-thin layers are air-stable. Chemical characterization, quantitative elemental analysis, and iron oxidation states were determined via Raman spectroscopy, wavelength disperse X-ray spectroscopy, X-ray absorption spectroscopy, and X-ray photoelectron spectroscopy. Superconducting quantum interference device magnetometry measurements were performed to examine the magnetic ordering. These layered materials exhibit paramagnetic or superparamagnetic characteristics at room temperature. At low temperature ferrimagnetic or antiferromagnetic ordering occurs, with the critical ordering temperature of 38.7 K for minnesotaite, 36.1 K for annite, and 4.9 K for biotite. In-field magnetic force microscopy on iron bearing phyllosilicates confirmed the paramagnetic response at room temperature, present down to monolayers.

Hybrid plasmonic devices involve a nanostructured metal supporting localized surface plasmons to amplify light-matter interaction, and a non-plasmonic material to functionalize charge excitations. Application-relevant epitaxial heterostructures, however, give rise to ballistic ultrafast dynamics that challenge the conventional semiclassical understanding of unidirectional nanometal-to-substrate energy transfer. We study epitaxial Au nanoislands on WSe$_2$ with time- and angle-resolved photoemission spectroscopy and femtosecond electron diffraction: this combination of techniques resolves material, energy and momentum of charge-carriers and phonons excited in the heterostructure. We observe a strong non-linear plasmon-exciton interaction that transfers the energy of sub-bandgap photons very efficiently to the semiconductor, leaving the metal cold until non-radiative exciton recombination heats the nanoparticles on hundreds of femtoseconds timescales. Our results resolve a multi-directional energy exchange on timescales shorter than the electronic thermalization of the nanometal. Electron-phonon coupling and diffusive charge-transfer determine the subsequent energy flow. This complex dynamics opens perspectives for optoelectronic and photocatalytic applications, while providing a constraining experimental testbed for state-of-the-art modelling.

The microscopic origin of slow carrier cooling in lead-halide perovskites remains debated, and has direct implications for applications. Slow carrier cooling has been attributed to either polaron formation or a hot-phonon bottleneck effect at high excited carrier densities (> 10$^{18}$ cm$^{-3}$). These effects cannot be unambiguously disentangled from optical experiments alone. However, they can be distinguished by direct observations of ultrafast lattice dynamics, as these effects are expected to create qualitatively distinct fingerprints. To this end, we employ femtosecond electron diffraction and directly measure the sub-picosecond lattice dynamics of weakly confined CsPbBr$_3$ nanocrystals following above-gap photo-excitation. The data reveal a light-induced structural distortion appearing on a time scale varying between 380 fs to 1200 fs depending on the excitation fluence. We attribute these dynamics to the effect of exciton-polarons on the lattice, and the slower dynamics at high fluences to slower hot carrier cooling, which slows down the establishment of the exciton-polaron population. Further analysis and simulations show that the distortion is consistent with motions of the [PbBr$_3$]$^{-}$ octahedral ionic cage, and closest agreement with the data is obtained for Pb-Br bond lengthening. Our work demonstrates how direct studies of lattice dynamics on the sub-picosecond timescale can discriminate between competing scenarios, thereby shedding light on the origin of slow carrier cooling in lead-halide perovskites.

We report on large exciton tuning in WSe$_2$ monolayers via substrate induced non-degenerate doping. We observe a redshift of $\sim$62 meV for the $A$ exciton together with a 1-2 orders of magnitude photoluminescence (PL) quenching when the monolayer WSe$_2$ is brought in contact with highly oriented pyrolytic graphite (HOPG) compared to the dielectric substrates such as hBN and SiO$_2$. As the evidence of doping from HOPG to WSe$_2$, a drastic increase of the trion emission intensity was observed. Using a systematic PL and Kelvin probe force microscopy (KPFM) investigation on WSe$_2$/HOPG, WSe$_2$/hBN, and WSe$_2$/graphene, we conclude that this unique excitonic behavior is induced by electron doping from the substrate. Our results propose a simple yet efficient way for exciton tuning in monolayer WSe$_2$, which plays a central role in the fundamental understanding and further device development.

Twisted 2D bilayer materials are created by artificial stacking of two monolayer crystal networks of 2D materials with a desired twisting angle $\theta$. The material forms a moiré superlattice due to the periodicity of both top and bottom layer crystal structure. The optical properties are modified by lattice reconstruction and phonon renormalization, which makes optical spectroscopy an ideal characterization tool to study novel physics phenomena. Here, we report a Raman investigation on a full period of the twisted bilayer (tB) WSe$_2$ moiré superlattice (\textit i.e. 0\deg $\leq \theta \leq$ 60\deg). We observe that the intensity ratio of two Raman peaks, $B_{2g}$ and $E_{2g}/A_{1g}$ correlates with the evolution of moiré period. The Raman intensity ratio as a function of twisting angle follows an exponential profile matching the moiré period with two local maxima at 0\deg and 60\deg and a minimum at 30\deg. Using a series of temperature-dependent Raman and photoluminescence (PL) measurements as well as \textitab initio calculations, the intensity ratio $I_{B_{2g}}/I_{{E_{2g}}/{A_{1g}}}$ is explained as a signature of lattice dynamics in tB WSe$_2$ moiré superlattices. By further exploring different material combinations of twisted hetero-bilayers, the results are extended for all kinds of Mo- and W-based TMDCs.

Stability is one of the most important challenges facing organic solar cells (OSC) on their path to commercialization. In the high-performance material system PM6:Y6 studied here, investigate degradation mechanisms of inverted photovoltaic devices. We have identified two distinct degradation pathways: one requires presence of both illumination and oxygen and features a short-circuit current reduction, the other one is induced thermally and marked by severe losses of open-circuit voltage and fill factor. We focus our investigation on the thermally accelerated degradation. Our findings show that bulk material properties and interfaces remain remarkably stable, however, aging-induced defect state formation in the active layer remains the primary cause of thermal degradation. The increased trap density leads to higher non-radiative recombination, which limits open-circuit voltage and lowers charge carrier mobility in the photoactive layer. Furthermore, we find the trap-induced transport resistance to be the major reason for the drop in fill factor. Our results suggest that device lifetimes could be significantly increased by marginally suppressing trap formation, leading to a bright future for OSC.

Bismuth compounds are of growing interest with regard to potential applications in catalysis, medicine and electronics, for which their environmentally benign nature is one of the key factors. The most common starting material is bismuth nitrate, which easily hydrolyses to give a large number of condensation products. The so-called bismuth subnitrates are composed of bismuth oxido clusters of varying composition and nuclearity. One reason that hampers the further development of bismuth oxido-based materials, however is the low solubility of the subnitrates, which makes targeted immobilisation on substrates challenging. We present an approach towards solubilisation of bismuth oxido clusters by introducing an amino carboxylate as functional group and a study of the growth mode of these atom-precise nanoclusters on gold surfaces. For this purpose the bismuth oxido cluster [Bi38O45(NO3)20(dmso)28](NO3)4*4dmso (dmso=dimethyl sulfoxide) was reacted with the sodium salt of tert-butyloxycabonyl(Boc)-protected phenylalanine (Phe) to give the soluble and chiral nanocluster [Bi38O45(Boc-Phe)24(dmso)9]. The hydrodynamic diameter of the cluster was estimated with (1.4-1.6) nm (in CH3CN) and (2.2 nm-2.9) nm (in Ethanol) based on dynamic light scattering (DLS). The full exchange of the nitrates by the amino carboxylates was proven by NMR and FTIR as well as elemental analysis (EA) and XPS. The solubility of the bismuth oxido cluster in a protic as well as an aprotic polar organic solvent and the growth mode of the clusters on Au upon spin-, dip-, and drop-coating on gold surfaces were studied. Successful deposition of bismuth oxido cluster was proven by powder XRD, FTIR, and XPS while the microstructure of the resulting films was investigated as a function of the deposition method and the solvent used by SEM, AFM, and optical microscopy.

Ultrafast magnetization dynamics are governed by energy flow between electronic, magnetic, and lattice degrees of freedom. A quantitative understanding of these dynamics must be based on a model that agrees with experimental results for all three subsystems. However, ultrafast dynamics of the lattice remain largely unexplored experimentally. Here, we combine femtosecond electron diffraction experiments of the lattice dynamics with energy-conserving atomistic spin dynamics (ASD) simulations and ab-initio calculations to study the intrinsic energy flow in the 3d ferromagnets cobalt (Co) and iron (Fe). The simulations yield a good description of experimental data, in particular an excellent description of our experimental results for the lattice dynamics. We find that the lattice dynamics are influenced significantly by the magnetization dynamics due to the energy cost of demagnetization. Our results highlight the role of the spin system as the dominant heat sink in the first hundreds of femtoseconds. Together with previous findings for nickel [Zahn et al., Phys. Rev. Research 3, 023032 (2021)], our work demonstrates that energy-conserving ASD simulations provide a general and consistent description of the laser-induced dynamics in all three elemental 3d ferromagnets.

The efficient integration of transition metal dichalcogenides (TMDs) into the current electronic device technology requires mastering the techniques of effective tuning of their optoelectronic properties. Specifically, controllable doping is essential. For conventional bulk semiconductors, ion implantation is the most developed method offering stable and tunable doping. In this work, we demonstrate n-type doping in MoSe2 flakes realized by low-energy ion implantation of Cl+ ions followed by millisecond-range flash lamp annealing (FLA). We further show that FLA for 3 ms with a peak temperature of about 1000 \degC is enough to recrystallize implanted MoSe2. The Cl distribution in few-layer-thick MoSe2 is measured by secondary ion mass spectrometry. An increase in the electron concentration with increasing Cl fluence is determined from the softening and red shift of the Raman-active A_1g phonon mode due to the Fano effect. The electrical measurements confirm the n-type doping of Cl-implanted MoSe2. A comparison of the results of our density functional theory calculations and experimental temperature-dependent micro-Raman spectroscopy data indicates that Cl atoms are incorporated into the atomic network of MoSe2 as substitutional donor impurities.

Antiferromagnets (AFMs) with zero net magnetization are proposed as active elements in future spintronic devices. Depending on the critical thickness of the AFM thin films and the measurement temperature, bimetallic Mn-based alloys and transition metal oxide-based AFMs can host various coexisting ordered, disordered, and frustrated AFM phases. Such coexisting phases in the exchange coupled ferromagnetic (FM)/AFM-based heterostructures can result in unusual magnetic and magnetotransport phenomena. Here, we integrate chemically disordered AFM IrMn3 thin films with coexisting AFM phases into complex exchange coupled MgO(001)/Ni3Fe/IrMn3/Ni3Fe/CoO heterostructures and study the structural, magnetic, and magnetotransport properties in various magnetic field cooling states. In particular, we unveil the impact of rotating the relative orientation of the disordered and reversible AFM moments with respect to the irreversible AFM moments on the magnetic and magnetoresistance properties of the exchange coupled heterostructures. We further found that the persistence of AFM grains with thermally disordered and reversible AFM order is crucial for achieving highly tunable magnetic properties and multi-level magnetoresistance states. We anticipate that the introduced approach and the heterostructure architecture can be utilized in future spintronic devices to manipulate the thermally disordered and reversible AFM order at the nanoscale.

Revealing the bonding and time-evolving atomic dynamics in functional materials with complex lattice structures can update the fundamental knowledge on rich physics therein, and also help to manipulate the material properties as desired. As the most prototypical chalcogenide phase change material, Ge2Sb2Te5 has been widely used in optical data storage and non-volatile electric memory due to the fast switching speed and the low energy consumption. However, the basic understanding of the structural dynamics on the atomic scale is still not clear. Using femtosecond electron diffraction, structure factor calculation and TDDFT-MD simulation, we reveal the photoinduced ultrafast transition of the local correlated structure in the averaged rock-salt phase of Ge2Sb2Te5. The randomly oriented Peierls distortion among unit cells in the averaged rock-salt phase of Ge2Sb2Te5 is termed as local correlated structures. The ultrafast suppression of the local Peierls distortions in individual unit cell gives rise to a local structure change from the rhombohedral to the cubic geometry within ~ 0.3 ps. In addition, the impact of the carrier relaxation and the large amount of vacancies to the ultrafast structural response is quantified and discussed. Our work provides new microscopic insights into contributions of the local correlated structure to the transient structural and optical responses in phase change materials. Moreover, we stress the significance of femtosecond electron diffraction in revealing the local correlated structure in the subunit cell and the link between the local correlated structure and physical properties in functional materials with complex microstructures.

Ultrafast manipulation of the magnetic state of matter bears great potential for future information technologies. While demagnetisation in ferromagnets is governed by dissipation of angular momentum, materials with multiple spin sublattices, e.g. antiferromagnets, can allow direct angular momentum transfer between opposing spins, promising faster functionality. In lanthanides, 4$\it{f}$ magnetic exchange is mediated indirectly through the conduction electrons (the Ruderman-Kittel-Kasuya-Yosida interaction, RKKY), and the effect of such conditions on direct spin transfer processes is largely unexplored. Here, we investigate ultrafast magnetization dynamics in 4f antiferromagnets, and systematically vary the 4$\it{f}$ occupation, thereby altering the magnitude of RKKY. By combining time-resolved soft x-ray diffraction with ab-initio calculations, we find that the rate of direct transfer between opposing moments is directly determined by the magnitude of RKKY. Given the high sensitivity of RKKY to the conduction electrons, our results offer a novel approach for fine-tuning the speed of magnetic devices.

Manipulating crystal structure and the corresponding electronic properties in quantum materials provides opportunities for the exploration of exotic physics and practical applications. Here, by ultrafast electron diffraction, structure factor calculation and TDDFT-MD simulations, we report the photoinduced concurrent intralayer and interlayer structural transitions in the Td and 1T' phase of XTe2 (X=Mo, W). Concomitant with the interlayer structural transition by shear displacement, the ultrafast suppression of the intralayer Peierls distortion within 0.3 ps is demonstrated and attributed to Mo-Mo (W-W) bond stretching. We discuss the modification of multiple quantum electronic states associated with the intralayer and interlayer structural transitions, such as the topological band inversion and the higher-order topological state. The twin structure and the stacking fault in XTe2 are identified by the ultrafast structural response. Our work elucidates the pathway of the photoinduced intralayer and interlayer structural transitions in atomic and femtosecond spatiotemporal scale. Moreover, the concurrent intralayer and interlayer structural transitions reveals the traversal of all double-well potential energy surfaces (DWPES) by laser excitation in material system, which may be an intrinsic mechanism in the field of photoexcitation-driven symmetry engineering, beyond the single DWPES transition model and the order-disorder transition model.

Time-resolved diffuse scattering experiments have gained increasing attention due to their potential to reveal non-equilibrium dynamics of crystal lattice vibrations with full momentum resolution. Although progress has been made in interpreting experimental data on the basis of one-phonon scattering, understanding the role of individual phonons can be sometimes hindered by multi-phonon excitations. In Ref. [\it arXiv:2103.10108] we have introduced a rigorous approach for the calculation of the all-phonon inelastic scattering intensity of solids from first-principles. In the present work, we describe our implementation in detail and show that multi-phonon interactions are captured efficiently by exploiting translational and time-reversal symmetries of the crystal. We demonstrate its predictive power by calculating the scattering patterns of monolayer molybdenum disulfide (MoS$_2$), bulk MoS$_2$, and black phosphorus (bP), and we obtain excellent agreement with our measurements of thermal electron diffuse scattering. Remarkably, our results show that multi-phonon excitations dominate in bP across multiple Brillouin zones, while in MoS$_2$ they play a less pronounced role. We expand our analysis for each system and examine the effect of individual atomic and interatomic vibrational motion on the diffuse scattering signals. We further demonstrate the high-throughput capability of our approach by reporting all-phonon scattering maps of 2D MoSe2, WSe2, WS2, graphene, and CdI2, rationalizing in each case the effect of multi-phonon processes. As a side point, we show that the special displacement method reproduces the thermally distorted configuration that generates precisely the all-phonon diffuse pattern.

Inelastic scattering experiments are key methods for mapping the full dispersion of fundamental excitations of solids in the ground as well as non-equilibrium states. A quantitative analysis of inelastic scattering in terms of phonon excitations requires identifying the role of multi-phonon processes. Here, we develop an efficient first-principles methodology for calculating the all-phonon quantum mechanical structure factor of solids. We demonstrate our method by obtaining excellent agreement between measurements and calculations of the diffuse scattering patterns of black phosphorus, showing that multi-phonon processes play a substantial role. The present approach constitutes a step towards the interpretation of static and time-resolved electron, X-ray, and neutron inelastic scattering data.

Quantitative knowledge of electron-phonon coupling is important for many applications as well as for the fundamental understanding of nonequilibrium relaxation processes. Time-resolved diffraction provides direct access to this knowledge through its sensitivity to laser-induced lattice dynamics. Here, we present an approach for analyzing time-resolved polycrystalline diffraction data. A two-step routine is used to minimize the number of time-dependent fit parameters. The lattice dynamics are extracted by finding the best fit to the full transient diffraction pattern rather than by analyzing transient changes of individual Debye-Scherrer rings. We apply this approach to platinum, an important component of novel photocatalytic and spintronic applications, for which a large variation of literature values exists for the electron-phonon coupling parameter $G_\mathrm{ep}$. Based on the extracted evolution of the atomic mean squared displacement (MSD) and using a two-temperature model (TTM), we obtain $G_\mathrm{ep}=(3.9\pm0.2)\cdot10^{17}\frac{\mathrm{W}}{\mathrm{m}^3\hspace{1pt}\mathrm{K}}$ (statistical error). We find that at least up to an absorbed energy density of $124\hspace{2pt}\frac{\mathrm{J}}{\mathrm{cm}^3}$, $G_\mathrm{ep}$ is not fluence-dependent. Our results for the lattice dynamics of platinum provide insights into electron-phonon coupling and phonon thermalization and constitute a basis for quantitative descriptions of platinum-based heterostructures in nonequilibrium conditions.

Singlet exciton fission (SEF) is a key process in the development of efficient opto-electronic devices. An aspect that is rarely probed directly, and yet has a tremendous impact on SEF properties, is the nuclear structure and dynamics involved in this process. Here we directly observe the nuclear dynamics accompanying the SEF process in single crystal pentacene using femtosecond electron diffraction. The data reveal coherent atomic motions at 1 THz, incoherent motions, and an anisotropic lattice distortion representing the polaronic character of the triplet excitons. Combining molecular dynamics simulations, time-dependent density functional theory and experimental structure factor analysis, the coherent motions are identified as collective sliding motions of the pentacene molecules along their long axis. Such motions modify the excitonic coupling between adjacent molecules. Our findings reveal that long-range motions play a decisive part in the disintegration of the electronically correlated triplet pairs, and shed light on why SEF occurs on ultrafast timescales.

We use femtosecond electron diffraction to study ultrafast lattice dynamics in the highly correlated antiferromagnetic (AF) semiconductor NiO. Using the scattering vector (Q) dependence of Bragg diffraction, we introduce a Q-resolved effective lattice temperature, and identify a nonthermal lattice state with preferential displacement of O compared to Ni ions, which occurs within ~0.3 ps and persists for 25 ps. We associate this with transient changes to the AF exchange striction-induced lattice distortion, supported by the observation of a transient Q-asymmetry of Friedel pairs. Our observation highlights the role of spin-lattice coupling in routes towards ultrafast control of spin order.

We present a quantum mechanical / molecular mechanics (QM/MM) to tackle chemical reactions with substantial molecular reorganization. For this, molecular dynamics simulations with smoothly switched interaction models are used to suggest suitable product states, whilst a Monte Carlo algorithm is employed to assess the reaction likeliness subject to energetic feasibility. As a demonstrator, we study the cross-linking of bisphenol F diglycidyl ether (BFDGE) and 4,6-diethyl-2-methylbenzene-1,3-diamine (DETDA). The modeling of epoxy curing was supplemented by Differential Scanning Calorimetry (DSC) measurements, which confirms the degrees of cross-linking as a function of curing temperature. Likewise, the heat of formation and the mechanical properties of the resulting thermosetting polymer are found to be in good agreement with previous experiments.

The ultrafast dynamics of magnetic order in a ferromagnet are governed by the interplay between electronic, magnetic and lattice degrees of freedom. In order to obtain a microscopic understanding of ultrafast demagnetization, information on the response of all three subsystems is required. A consistent description of demagnetization and microscopic energy flow, however, is still missing. Here, we combine a femtosecond electron diffraction study of the ultrafast lattice response of nickel to laser excitation with ab initio calculations of the electron-phonon interaction and energy-conserving atomistic spin dynamics simulations. Our model is in agreement with the observed lattice dynamics and previously reported electron and magnetization dynamics. Our approach reveals that the spin system is the dominating heat sink in the initial few hundreds of femtoseconds and implies a transient non-thermal state of the spins. Our results provide a clear picture of the microscopic energy flow between electronic, magnetic and lattice degrees of freedom on ultrafast timescales and constitute a foundation for theoretical descriptions of demagnetization that are consistent with the dynamics of all three subsystems.

We combine femtosecond electron diffuse scattering experiments and first-principles calculations of the coupled electron-phonon dynamics to provide a detailed momentum-resolved picture of the ultrafast lattice thermalization in a thin film of black phosphorus. The measurements reveal the emergence of highly anisotropic non-thermal phonon populations which persist for several picoseconds following excitation of the electrons with a light pulse. Combining ultrafast dynamics simulations based on the time-dependent Boltzmann formalism and calculations of the structure factor, we reproduce the experimental data and identify the vibrational modes primarily responsible for the carrier relaxation via electron-phonon coupling and the subsequent lattice thermalization via phonon-phonon scattering. In particular, we attribute the non-equilibrium lattice dynamics of black phosphorus to highly-anisotropic phonon-assisted scattering processes, which are primarily mediated by high-energy optical phonons. Our approach paves the way towards unravelling and controlling microscopic energy-flow pathways in two-dimensional materials and van der Waals heterostructures, and may also be extended to other non-equilibrium phenomena involving coupled electron-phonon dynamics such as superconductivity, phase transitions or polaron physics.

TMDCs have attracted a lot of attention in recent years due to their unique indirect to direct band gap transition from bulk to monolayer thickness. Strong confinement in the out-of-plane direction enhances the Coulomb potential between the charged particles (e-h pairs) and thus increases the exciton binding energy dramatically. The lattice inversion asymmetry in a monolayer creates two non-equivalent (but degenerate in energy) band edges protected by time reversal polarisation via pseudo-spin. However, the presence of strong spin-orbit coupling in the valence band and weak spin-splitting in the conduction band results in the lowest lying exciton in WX2 (X = S, Se) being spin forbidden and optically dark. Because of their long life times, dark excitons (XD) are highly attractive for quantum optics and optoelectronic applications. To date studying XD emission is limited to cryogenic temperature or required very complex experimental configurations to observe them at room temperature (RT). Here, we demonstrate a novel approach of radiative decay of XD related emissions in 1L-WSe2 studied by micro and nano PL at RT. 1L-WSe2 flakes were sandwiched by noble metal (Au or Ag) substrates and PDMS nano-patches providing a strong local out-of-plane dipole moment with respect to the 2D plane. This strong dipole moment not only enhances the XD in WSe2, it also produces bound excitons due to extrinsic charge defects visible at RT. The spatial distributions of these XD related emissions were studied by TEPL with a spatial resolution < 10 nm confirming the confinement of these excitons within the PDMS nano-patches. Finally, by removing the nano-patches from the top of the flakes we are able to recover the bright excitons in the 1L-WSe2. Our approach paves the way for deep understanding and to harness excitonic properties in low dimensional semiconductors, thus offering a platform towards quantum optics.

Black phosphorus has recently attracted significant attention for its highly anisotropic properties. A variety of ultrafast optical spectroscopies has been applied to probe the carrier response to photoexcitation, but the complementary lattice response has remained unaddressed. Here we employ femtosecond electron diffraction to explore how the structural anisotropy impacts the lattice dynamics after photoexcitation. We observe two timescales in the lattice response, which we attribute to electron-phonon and phonon-phonon thermalization. Pronounced differences between armchair and zigzag directions are observed, indicating a nonthermal state of the lattice lasting up to ~60 ps. This nonthermal state is characterized by a modified anisotropy of the atomic vibrations compared to equilibrium. Our findings provide insights in both electron-phonon as well as phonon-phonon coupling and bear direct relevance for any application of black phosphorus in nonequilibrium conditions.

In this work, we report linear and non-linear spectroscopic measurements of chemically-grown layered (from one to 37 quintuple layers) and bulk alpha-In2Se3 samples over a photon energy range of 1.0--4 eV, and compare with ab initio density functional theory calculations, including bandstructures and G0W0 calculations.

We study the ultrafast structural dynamics, in response to electronic excitations, in heterostructures composed of Au$_{923}$ nanoclusters on thin-film substrates with the use of femtosecond electron diffraction. Various forms of atomic motion, such as thermal vibrations, thermal expansion and lattice disordering, manifest as distinct and quantifiable reciprocal-space observables. In photo-excited, supported nanoclusters thermal equilibration proceeds through intrinsic heat flow, between their electrons and their lattice, and extrinsic heat flow between the nanoclusters and their substrate. For an in-depth understanding of this process, we have extended the two-temperature model to the case of 0D/2D heterostructures and used it to describe energy flow among the various subsystems, to quantify interfacial coupling constants, and to elucidate the role of the optical and thermal substrate properties. When lattice heating of Au nanoclusters is dominated by intrinsic heat flow, a reversible disordering of atomic positions occurs, which is absent when heat is injected as hot substrate-phonons. The present analysis indicates that hot electrons can distort the lattice of nanoclusters, even if the lattice temperature is below the equilibrium threshold for surface pre-melting. Based on simple considerations, the effect is interpreted as activation of surface diffusion due to modifications of the potential energy surface at high electronic temperatures. We discuss the implications of such a process in structural changes during surface chemical reactions.

We investigate the interactions of photoexcited carriers with lattice vibrations in thin films of the layered transition metal dichalcogenide (TMDC) WSe$_2$. Employing femtosecond electron diffraction with monocrystalline samples and first principle density functional theory calculations, we obtain a momentum-resolved picture of the energy-transfer from excited electrons to phonons. The measured momentum-dependent phonon population dynamics are compared to first principle calculations of the phonon linewidth and can be rationalized in terms of electronic phase-space arguments. The relaxation of excited states in the conduction band is dominated by intervalley scattering between $\Sigma$ valleys and the emission of zone-boundary phonons. Transiently, the momentum-dependent electron-phonon coupling leads to a non-thermal phonon distribution, which, on longer timescales, relaxes to a thermal distribution via electron-phonon and phonon-phonon collisions. Our results constitute a basis for monitoring and predicting out of equilibrium electrical and thermal transport properties for nanoscale applications of TMDCs.

The interface formation between copper phthalocyanine (CuPc) and two representative metal substrates, i.e., Au and Co, was investigated by the combination of ultraviolet photoelectron spectroscopy and inverse photoelectron spectroscopy. The occupied and unoccupied molecular orbitals and thus the transport band gap of CuPc are highly influenced by film thickness, i.e., molecule-substrate distance. Due to the image charge potential given by the metallic substrates the transport band gap of CuPc "opens" from $(1.4 \pm 0.3)$ eV for 1 nm thickness to $(2.2 \pm 0.3)$ eV, and saturates at this value above 10 nm CuPc thickness. The interface dipoles with values of 1.2 eV and 1.0 eV for Au and Co substrates, respectively, predominantly depend on the metal substrate work functions. X-ray photoelectron spectroscopy measurements using synchrotron radiation provide detailed information on the interaction between CuPc and the two metal substrates. While charge transfer from the Au or Co substrate to the Cu metal center is present only at sub-monolayer coverages, the authors observe a net charge transfer from the molecule to the Co substrate for films in the nm range. Consequently, the Fermi level is shifted as in the case of a p-type doping of the molecule. This is, however, a competing phenomenon to the energy band shifts due to the image charge potential.

Potassium (K) intercalated manganese phthalocyanine (MnPc) reveals vast changes of its electronic states close to the Fermi level. However, theoretical studies are controversial regarding the electronic configuration. Here, MnPc doped with K was studied by ultraviolet, X-ray, and inverse photoemission, as well as near edge X-ray absorption fine structure spectroscopy. Upon K intercalation the Fermi level shifts toward the lowest unoccupied molecular orbital filling it up with donated electrons with the appearance of an additional feature in the energy region of the occupied states. The electronic bands are pinned 0.5 eV above and 0.4 eV below the Fermi level. The branching ratio of the Mn L3 and L2 edges indicate an increase of the spin state. Moreover, the evolution of the Mn L and N K edges reveals strong hybridization between Mn 3d and N 2p states of MnPc and sheds light on the electron occupation in the ground and n-doped configurations.

The two-dimensional silicon allotrope, silicene, could spur the development of new and original concepts in Si-based nanotechnology. Up to now silicene can only be epitaxially synthesized on a supporting substrate such as Ag(111). Even though the structural and electronic properties of these epitaxial silicene layers have been intensively studied, very little is known about its vibrational characteristics. Here, we present a detailed study of epitaxial silicene on Ag(111) using \textitin situ Raman spectroscopy, which is one of the most extensively employed experimental techniques to characterize 2D materials, such as graphene, transition metal dichalcogenides, and black phosphorous. The vibrational fingerprint of epitaxial silicene, in contrast to all previous interpretations, is characterized by three distinct phonon modes with A and E symmetries. The temperature dependent spectral evolution of these modes demonstrates unique thermal properties of epitaxial silicene and a significant electron-phonon coupling. These results unambiguously support the purely two-dimensional character of epitaxial silicene up to about $300^{\circ}C$, whereupon a 2D-to-3D phase transition takes place.

Co$_3$O$_4$, ZnFe$_2$O$_4$, CoFe$_2$O$_4$, ZnCo$_2$O$_4$, and Fe$_3$O$_4$ thin films were fabricated by pulsed laser deposition at high and low temperatures resulting in crystalline single-phase normal, inverse, as well as disordered spinel oxide thin films with smooth surface morphology. The dielectric function, determined by spectroscopic ellipsometry in a wide spectral range from 0.5 eV to 8.5 eV, is compared with the magneto-optical response of the dielectric tensor, investigated by magneto-optical Kerr effect (MOKE) spectroscopy in the spectral range from 1.7 eV to 5.5 eV with an applied magnetic field of 1.7 T. Crystal field, inter-valence and inter-sublattice charge transfer transitions, and transitions from O$_{2p}$ to metal cation 3d or 4s bands are identified in both the principal diagonal elements and the magneto-optically active off-diagonal elements of the dielectric tensor. Depending on the degree of cation disorder, resulting in local symmetry distortion, the magneto-optical response is found to be strongest for high crystal quality inverse spinels and for disordered normal spinel structure, contrary to the first principle studies of CoFe$_2$O$_4$ and ZnFe$_2$O$_4$. The results presented provide a basis for deeper understanding of light-matter interaction in this material system that is of vital importance for device-related phenomena and engineering.

Ferromagnetism can occur in wide-band gap semiconductors as well as in carbon-based materials when specific defects are introduced. It is thus desirable to establish a direct relation between the defects and the resulting ferromagnetism. Here, we contribute to revealing the origin of defect-induced ferromagnetism using SiC as a prototypical example. We show that the long-range ferromagnetic coupling can be attributed to the p electrons of the nearest-neighbor carbon atoms around the VSiVC divacancies. Thus, the ferromagnetism is traced down to its microscopic, electronic origin.

The manganese induced magnetic, electrical and structural modification in InMnP epilayers, prepared by Mn ion implantation and pulsed laser annealing, are investigated in the following work. All samples exhibit clear hysteresis loops and strong spin polarization at the Fermi level. The degree of magnetization, the Curie temperature and the spin polarization depend on the Mn concentration. The bright-field transmission electron micrographs show that InP samples become almost amorphous after Mn implantation but recrystallize after pulsed laser annealing. We did not observe an insulator-metal transition in InMnP up to a Mn concentration of 5 at./%. Instead all InMnP samples show insulating characteristics up to the lowest measured temperature. Magneotresistance results obtained at low temperatures support the hopping conduction mechanism in InMnP. We find that the Mn impurity band remains detached from the valence band in InMnP up to 5 at./% Mn doping. Our findings indicate that the local environment of Mn ions in InP is similar to GaMnAs, GaMnP and InMnAs, however, the electrical properties of these Mn implanted III-V compounds are different. This is one of the consequences of the different Mn binding energy in these compounds.

The electronic excitations of manganese phthalocyanine (MnPc) films were studied as a function of potassium doping using electron energy-loss spectroscopy in transmission. Our data reveal doping induced changes in the excitation spectrum, and they provide evidence for the existence of three doped phases: K$_1$MnPc, K$_2$MnPc, and K$_4$MnPc. Furthermore, the addition of electrons first leads to a filling of orbitals with strong Mn 3d character, a situation which also affects the magnetic moment of the molecule.

In all printed OFETs with Poly(3,4-ethylenedioxythiophene)/ poly(styrenesulfonate) (PEDOT/ PSS) gate, offset printing and gravure of electrically dense sub-$\mu$ insulators from polyvinylphenol (PVPh), polyvinyl alcohol (PVOH) and poly(methyl methacrylate) (PMMA) as well as other organic and inorganic materials turned out to be problematic due to the most reactive part of the gate material- the negative sulfonate ions from PSS. The present paper investigates the nature of the interaction between PSS and PVOH sub-$\mu$ insulator explored by infrared spectroscopy and electrical methods. Some evidence is obtained that most probably OH- and not sulfonate ions are responsible for creating channels, penetrated by PEDOT/PSS nano dispersion applied as gate.