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Hydrogen as the cleanest energy carrier is a promising alternative renewable resource to fossil fuels. There is an ever-increasing interest in exploring efficient and cost-effective approaches of hydrogen production. Recent experiments have shown that single platinum atom immobilized on the metal vacancies of MXenes allows a high-efficient hydrogen evolution reaction (HER). Here using ab initio calculations, we design a series of substitutional Pt-doped Tin+1CnTx (Tin+1CnTx-PtSA) with different thicknesses and terminations (n = 1, 2 and 3, Tx = O, F and OH), and investigate the quantum-confinement effect on the HER catalytic performance. Surprisingly, we reveal a strong thickness effect of the MXene layer on the HER performance. Amongst the various surface-terminated derivatives, Ti2CF2-PtSA and Ti2CH2O2-PtSA are found to be the best HER catalysts with the change of Gibbs free energy ∆G*H ~ 0 eV, complying with the thermoneutral condition. The ab initio molecular dynamics simulations reveal that Ti2CF2-PtSA and Ti2CH2O2-PtSA possess a good thermodynamic stability. The present work shows that the HER catalytic activity of the MXene is not solely governed by the local environment of the surface such as Pt single atom. We point out the critical role of thickness control and surface decoration of substrate in achieving a high-performance HER catalytical activity.

Nitrate reduction to ammonia has attracted much attention for nitrate (NO3-) removal and ammonia (NH3) production. Identifying promising catalyst for active nitrate electroreduction reaction (NO3RR) is critical to realize efficient upscaling synthesis of NH3 under low-temperature condition. For this purpose, by means of spin-polarized first-principles calculations, the NO3RR performance on a series of graphitic carbon nitride (g-CN) supported double-atom catalysts (denoted as M1M2@g-CN) are systematically investigated. The synergistic effect of heterogeneous dual-metal sites can bring out tunable activity and selectivity for NO3RR. Amongst 21 candidates examined, FeMo@g-CN and CrMo@g-CN possess a high performance with low limiting potentials of -0.34 and -0.39 V, respectively. The activities can be attributed to a synergistic effect of the M1M2 dimer d orbitals coupling with the anti-bonding orbital of NO3-. The dissociation of deposited FeMo and CrMo dimers into two separated monomers is proved to be difficult, ensuring the kinetic stability of M1M2@g-CN. Furthermore, the dual-metal decorated on g-CN significantly reduces the bandgap of g-CN and broadens the adsorption window of visible light, implying its great promise for photocatalysis. This work opens a new avenue for future theoretical and experimental design related to NO3RR photo-/electrocatalysts.

Engineering surfaces and interfaces of materials promises great potential in the field of heterostructures and quantum matter designer, with the opportunity of driving new many-body phases that are absent in the bulk compounds. Here, we focus on the magnetic Weyl kagome system Co$_3$Sn$_2$S$_2$ and show how for different sample's terminations the Weyl-points connect also differently, still preserving the bulk-boundary correspondence. Scanning-tunnelling microscopy has suggested such a scenario indirectly. Here, we demonstrate this directly for the fermiology of Co$_3$Sn$_2$S$_2$, by linking it to the system real space surfaces distribution. By a combination of micro-ARPES and first-principles calculations, we measure the energy-momentum spectra and the Fermi surfaces of Co$_3$Sn$_2$S$_2$ for different surface terminations and show the existence of topological features directly depending on the top-layer electronic environment. Our work helps to define a route to control bulk-derived topological properties by means of surface electrostatic potentials, creating a realistic and reliable methodology to use Weyl kagome metals in responsive magnetic spintronics.

Recently synthesized novel phase of germanium selenide (\gamma-GeSe) adopts a hexagonal lattice and a surprisingly high conductivity than graphite. This triggers great interests in exploring its potential for thermoelectric applications. Herein, we explored the thermoelectric performance of monolayer \gamma-GeSe and other isostructural \gamma-phase of group-IV monochalcogenides \gamma-GeX (X = S, Se and Te) using the density functional theory and the Boltzmann transport theory. A superb thermoelectric performance of monolayer \gamma-GeSe is revealed with figure of merit ZT value up to 1.13-2.76 for n-type doping at a moderate carrier concentration of 4.73-2.58x10^12 cm-2 between 300 and 600 K. This superb performance is rooted in its rich pocket states and flat plateau levels around the electronic band edges, leading to promoted concentrations and electronic conductivity, and limited thermal conductivity. Our work suggests that monolayer \gamma-GeSe is a promising candidate for high performance medium-temperature thermoelectric applications.

Topological insulators are characterized by spin-momentum-locked massless surface states which are robust under various perturbations. Manipulating such surface states is a topic of vigorous research, as a possible route for the realization of emergent many-body physics in topological systems. Thus far, time-reversal symmetry breaking via Coulomb and magnetic perturbations has been a dominant approach for the tuning of topological states. However, the effect of the structural degrees of freedom on quasi-particle dynamics in topological materials remains elusive. In this work, we demonstrate a transition in HfTe5 between distinct topological phases as a function of either Te vacancy concentration or applied strain; these phases are characterized theoretically as a transition from strong to weak topological insulator and experimentally by a transition from sharp surface states and Dirac crossing to a Fermi-liquid-like quasiparticle state in which these surface-localized features are heavily suppressed. Although vacancies can result in various consequences such as scattering, doping, and structural distortions, we show that changes in the lattice constants play the foremost role in determining the electronic structure, self-energy, and topological states of HfTe5. Our results demonstrate the possibility of using both defect chemistry and strain as control parameters for topological phase transitions and associated many-body physics.

Single crystals of a new layered compound, Cr1.21Te2, was synthesized via a vapor transport method. The crystal structure and physical properties were characterized by single crystal and powder x-ray diffraction, temperature- and field-dependent magnetization, zero-field heat capacity and angle-resolved photoemission spectroscopy. Cr1.21Te2, containing two Cr sites, crystalizes in a trigonal structure with a space group P-3 (No. 147). The Cr site in the interstitial layer is partially occupied. Physical property characterizations indicate that Cr1.21Te2 is metallic with hole pockets at the Fermi energy and undergoes a ferromagnetic phase transition at ~173 K. The magnetic moments align along the c-axis in the ferromagnetic state. Based on low temperature magnetization, the spin stiffness constant D and spin excitation gap $\Delta$ were estimated according to Bloch's law to be D = 99 $\pm$ 24 meV $\r{A}^2$ and $\Delta$ = 0.46 $\pm$ 0.33 meV, suggesting its possible application as a low dimensional ferromagnet.

We report the growth and characterization of MnPd$_5$P, a ferromagnet with T$_C$ $\approx$ 295 K, and conduct a substitutional study with its antiferromagnetic analogue MnPt$_5$P. We grow single crystals of MnPd$_5$P and Mn(Pt$_{1-x}$Pd$_x$)$_5$P by adding Mn into (Pt$_{1-x}$Pd$_{x}$)-P based melts. All compounds in the family adopt the layered anti-CeCoIn$_5$ structure with space group P4/mmm, and EDS and XRD results indicate that MnPt$_5$P and MnPd$_5$P form a solid solution. Based on magnetization and resistance data, we construct a T-x phase diagram for Mn(Pt$_{1-x}$Pd$_x$)$_5$P and demonstrate the antiferromagnetic order found in MnPt$_5$P is extraordinarily sensitive to Pd substitution. At low Pd fractions (x $<$ 0.010), the single antiferromagnetic transition in pure MnPt$_5$P splits into a higher temperature ferromagnetic transition followed on cooling by a lower temperature ferromagnetic to antiferromagnetic transition and then by a re-entrant antiferromagnetic to ferromagnetic transition at lower temperatures. The antiferromagnetic region makes up a bubble that persists to x $\approx$ 0.009 for T $\approx$ 150 K, with all samples x $<$ 0.009 recovering their initial ferromagnetic state with further cooling to base temperature. Over the same low x range we find a non-monotonic change in the room temperature unit cell volume, further suggesting that pure MnPt$_5$P is close to an instability. Once x $>$ 0.010, Mn(Pt$_{1-x}$Pd$_x$)$_5$P undergoes a single ferromagnetic transition. The Curie temperature increases rapidly with x, rising from T$_C$ $\approx$ 197 K at x = 0.013 to a maximum of T$_C$ $\approx$ 312 K for x $\approx$ 0.62, and then falls back to T$_C$ $\approx$ 295 K for pure MnPd$_5$P (x = 1). Given that Pt and Pd are isoelectronic, this work raises questions as to the origin of the extreme sensitivity of the magnetic ground state in MnPt$_5$P upon introducing Pd.

Single crystals of a Shastry-Sutherland magnetic semiconductor, BaNd2ZnS5, were synthesized through a high-temperature solution growth technique. Physical properties were characterized by powder and single crystal x-ray diffraction, temperature- and field-dependent magnetization, and temperature-dependent specific heat measurements. BaNd2ZnS5 orders antiferromagnetically at 2.9 K, with magnetic moments primarily aligned within the ab-plane. Magnetic isothermal measurements show metamagnetic transitions at ~ 15 kOe for the [110] direction and ~ 21 kOe for the [100] direction. Estimated magnetic entropy suggests a double ground state for each Nd ion.

Lead-free tin-based perovskites are highly appealing for the next generation of solar cells due to their intriguing optoelectronic properties. However, the tendency of Sn2+ oxidation to Sn4+ in the tin-based perovskites induces serious film degradation and performance deterioration. Herein, we demonstrate, through the density functional theory based first-principle calculations in a surface slab model, that the surface defects of the Sn-based perovskite FASnI3 (FA = NH2CHNH2+) could be effectively passivated by the Lewis base molecules. The passivation performance of Lewis base molecules in tin-based perovskite is tightly correlated with their molecular hardness. We reveal that the degree of hardness of Lewis adsorbate governs the stabilization via dual effects: first, changing the stubborn spatial distribution of tin vacancy (VSn) by triggering charge redistribution; second, saturating the dangling states while simultaneously reducing the amounts of deep band gap states. Specifically, the hard Lewis base molecules like edamine (N-donor group) and Isatin-Cl (Cl-donor group) would show a better healing effect than other candidates on the defects-contained tin-based perovskite surface with a somehow hard Lewis acid nature. Our research provides a general strategy for additive engineering and fabricating stable and high-efficiency lead-free Sn-based perovskite solar cells.

Existence of van der Waals gaps renders two-dimensional (2D) materials ideal passages of lithium for being used as anode materials. However, the requirement of good conductivity significantly limits the choice of 2D candidates. So far only graphite is satisfying due to its relatively high conductivity. Recently, a new polymorph of layered germanium selenide (Gamma-GeSe) was proven to be semimetal in its bulk phase with a higher conductivity than graphite while its monolayer behaves semiconducting. In this work, by using first-principles calculations, we examined the possibility of using this new group-IV monochalcogenide, Gamma-GeSe, as anode in the Li-ion battery (LIBs). Our studies revealed that Li atom would form an ionic adsorption with adjacent selenium atoms at the hollow site and exist in cationic state (lost 0.89 e to Gamma-GeSe). Results of climbing image-nudged elastic band show the diffusion barrier of Li is 0.21 eV in the monolayer limit, which can activate a relatively fast diffusion even at room temperature on the Gamma-GeSe surface. The calculated theoretical average voltages range from 0.071 to 0.015 V at different stoichiometry of LixGeSe with minor volume variation, suggesting its potential application as anode of LIBs. The predicted moderate binding energy, a low open circuit voltage (comparable to graphite) and a fast motion of Li suggests that Gamma-GeSe nanosheet can be chemically exfoliated via Li intercalation and a promising candidate as the anode material for LIBs.

We report the magnetic changes from canted antiferromagnetic to ferromagnetic orderings in anti-115-type MnPt$_{5-x}$Pd$_x$P ($x$ = 1, 2, 2.5, 3, 4, and 5) and the discovery of a new rare-earth-free ferromagnet, MnPd$_5$P by both theoretical prediction and experimental investigation. The family compounds were synthesized using high temperature solid state method and characterized to crystalize in the anti-CeCoIn$_5$ type with the space group P4/mmm exhibiting a two-dimensional layered structural feature. The magnetic property measurements indicate that the compounds ordered from canted A-type antiferromagnet in MnPt$_5$P to ferromagnet above the room temperature with varying degrees of coercivity and magnetic moments in MnPd$_5$P by reducing the spin orbital coupling. The results of the MnPt$_{5-x}$Pd$_x$P have been analyzed in comparison to the other candidates of the 151 family of Mn(Pt/Pd)$_5$(P/As) to understand the complex structure-magnetism relationships.

Electrocatalysts of nitrogen reduction reaction (NRR) have attracted ever-growing attention due to its application for renewable energy alternative to fossil fuels. However, activation of inert N-N bond requires multiple complex charge injection which complicates the design of the catalysts. Here via combining atomic-scale screening and machine learning (ML) methods we explore the rational design of NRR single-atom catalysts (SACs) supported by molybdenum disulfide (MoS2). Our work reveals that the activity of NRR SACs is highly dependent on the number of unpaired d electrons of TM: positive samples with high activity favoring higher values while negative cases distributing at lower values, both varying with the doping conditions of the host. We find that the substitution of sulfur with boron can activate the intrinsic NRR activity of some TMs such as Ti and V which are otherwise inactive above pristine MoS2. Importantly, among the various de-scriptors used in ML, the charged state of adsorbed TM plays a key role in donating electron to pi-anti-bonding orbital of N2 via the back-donation mechanism. Our work shows a feasible strategy for rational design of NRR SACs and retrieval of the decisive feature of active catalysts.

Layered chalcogenide materials have a wealth of nanoelectronics applications like resistive switching and energy-harvesting such as photocatalyst owing to rich electronic, orbital, and lattice excitations. In this work, we explore monochalcogenide germanium selenide GeSe with respect to substitutional doping with 13 metallic cations by using first-principles calculations. Typical dopants including s-shell (alkali elements Li and Na), p-shell (Al, Pb and Bi), 3d (Fe, Cu, Co and Ni), 4d (Pd and Ag) and 5d (Au and Pt) elements are systematically examined. Amongst all the cationic dopants, Al with the highest oxidation states, implying a high mobility driven by electric field, and Al-doped GeSe may be a promising candidate for novel resistive switching devices. We show that there exist many localized induced states in the band gap of GeSe upon doping Fe, Co, or Ni, while for Cu, Ag, and Au cases there is no such states in the gap. The Ag and Cu are + 0.27 and + 0.35 charged respectively and the positive charges are beneficial for field-driven motion in GeSe. In contrast, Au is slightly negatively charged renders Au-doped GeSe a promising photocatalyst and enhanced surface plasmon. Moreover, we explore the coexistence of dopant and strain in GeSe and find dynamical adjustments of localized states in GeSe with levels successive shifting upward/downward with strain. This induces dynamic oxidative states of the dopants under strain which should be quite popular in composites where motion of metal adatoms causes significant deformation.

Nitrogen reduction reaction (NRR) which converts nitrogen (N2) to ammonia (NH3) normally requires harsh conditions to break the bound nitrogen bond. Herein, via first-principles calculation we reveal that a superior NRR catalytic activity could be obtained through anchoring atomic catalyst above a phosphorene-like puckering surface of germanium selenide (GeSe). Through examining the single- and double- atoms (B, Fe, W, Mo and Ru) decorated on GeSe, we find that its rippled structure allows an intimate contact between the deposited species and the GeSe which significantly promotes the states hybridization. Amongst the various atomic catalyst, we predict that the Ru dimer decorated GeSe monolayer (Ru2@GeSe) has superior catalytic activity for the N2 fixation and reduction. Through examining the three NRR pathways (distal, alternating and enzymatic), the distal and enzymatic pathway is both the thermodynamically favorable with the maximum Gibbs free energy change (∆GMAX) of 0.25 and 0.26 eV, respectively. Such a superior activity could be attributed to the filtered states of GeSe by Ru dimer which leads to the effective activation of the adsorbed N2 bond. As an efficient near-infrared absorber of GeSe, the Ru mediated hybridization of GeSe-Ru-N2 complex enables an in-gap state which further broadens the absorbing window, rendering for a broadband solar absorption and possible photocatalysis.

Low temperature magnetization of CrI3, CrSiTe3 and CrGeTe3 single crystals were systematically studied. Based on the temperature dependence of extrapolated spontaneous magnetization from magnetic isotherms measured at different temperatures, the spin stiffness constant (D) and spin excitation gap ($\Delta$) were extracted according to Bloch's law. For spin stiffness, D is estimated to be 27${\pm}$6 meV $\r{A}^2$, 20${\pm}$3 meV $\r{A}^2$ and 38${\pm}$7 meV $\r{A}^2$ for CrI3, CrSiTe3 and CrGeTe3 respectively. Spin excitation gaps determined via Bloch's formulation have larger error bars yielding 0.59${\pm}$0.34 meV (CrI3), 0.37${\pm}$0.22 meV (CrSiTe3) and 0.28${\pm}$0.19 meV (CrGeTe3). Among all three studied compounds, larger spin stiffness value leads to higher ferromagnetic transition temperature.