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We report on the low-temperature fabrication (300$\deg$C) of ultrathin 2D amorphous carbon layers on III-V semiconductors by plasma-enhanced chemical vapor deposition as a universal template for remote epitaxy. We present growth and detailed characterization of 2D amorphous carbon layers on various host substrates and their subsequent remote epitaxial overgrowth by solid-source molecular beam epitaxy. We present the fabrication of ultra-smooth monolayer thick amorphous carbon layers with roughness $\leq 0.3$ nm determined by atomic-force microscopy and X-ray reflectivity measurement. We show that precisely tailoring the carbon layer thickness allows superior tunability of the substrate-layer interaction. Further, X-ray photoelectron and Raman spectroscopy measurements reveal predominantly sp$^2$-hybridised carbon in the amorphous layers. We observe that a low-temperature nucleation step is favorable for nucleation of III-V material growth on substrates coated with thin amorphous carbon layers. Under optimized preparation conditions, we obtain high-quality, single-crystalline, (001)-oriented GaAs, cubic-AlN, cubic-GaN and In(x)Ga(1-x)As, respectively, and various carbon-coated (001)-oriented substrates as GaAs, InP and 3C-SiC. Transmission electron microscopy images of the substrate-carbon-layer interface reveal a stretching of the atomic bonds at the interface and high-resolution X-ray diffraction measurements reveal high crystal quality and low dislocation densities $<1\times 10^7 \text{cm}^{-2}$. Our results show the universality of our carbon deposition process to fabricate templates for remote epitaxy, e. g., for remote epitaxy on temperature sensitive substrates like GaAs or InP and growth of metastable phases. Lift-off of layers from their substrates is demonstrated by employing a Ni stressor.

Cavity-enhanced emission of electrically controlled semiconductor quantum dots is essential in developing bright quantum devices for real-world quantum photonic applications. Combining the circular Bragg grating (CBG) approach with a PIN-diode structure, we propose and implement an innovative concept for ridge-based electrically-contacted CBG resonators. Through fine-tuning of device parameters in numerical simulations and deterministic nanoprocessing, we produced electrically controlled single quantum dot CBG resonators with excellent electro-optical emission properties. These include multiple wavelength-tunable emission lines and a photon extraction efficiency (PEE) of up to (30.4$\pm$3.4)%, where refined numerical optimization based on experimental findings suggests a substantial improvement, promising PEE >50%. Additionally, the developed quantum light sources yield single-photon purity reaching (98.8$\pm$0.2)% [post-selected: (99.5$\pm$0.3)%] and a photon indistinguishability of (25.8$\pm$2.1)% [post-selected: (92.8$\pm$4.8)%]. Our results pave the way for high-performance quantum devices with combined cavity enhancement and deterministic charge-environment controls, advancing the development of photonic quantum information systems such as complex quantum repeater networks.

We present a new double-layer design for 2D surface superlattice systems in GaAs-AlGaAs heterostructures. Unlike previous studies, our device (1) uses an in-situ gate, which allows very short period superlattice in high mobility, shallow heterostructures; (2) enables independent control of the carrier density and the superlattice modulation potential amplitude over a wide range. We characterise this device design using low-temperature magneto-transport measurements and show that the fabrication process caused minimal damage to the system. We demonstrate the tuning of potential modulation from weak (much smaller than Fermi energy) to strong (larger than the Fermi energy) regimes.

The most abundant form of water in the universe probably is its supercooled state, staying non-crystalline down to lowest temperatures. The many peculiarities of liquid water, like its partly negative thermal expansion, have been traced back to prominent anomalies occurring in its supercooled form - especially under elevated pressure - and to the presence of two variants of supercooled water and of amorphous, glassy ice. However, the bare existence of these different liquid states and of a related liquid-liquid crossover at ambient pressure are controversially debated since decades, just as the absolute value of water's glass-transition temperature. Their direct experimental detection is hampered by the inevitable crystallization of pure water in a certain temperature range, termed "no-man's land". To tackle these problems, we have applied dielectric spectroscopy and differential scanning calorimetry to aqueous LiCl solutions. By covering a frequency range of up to 14 decades and by quenching some of the solutions to avoid crystallization, here we show that there are indeed strong hints at two forms of water, occurring in different temperature ranges and having different glass-transition temperatures, even at ambient pressure: A so-called "fragile" liquid, characterized by super-Arrhenius temperature dependence of the molecular dynamics at high temperatures, and a "strong" liquid, nearly following Arrhenius behaviour, at low temperatures.

Semiconductor quantum dot molecules are considered as promising candidates for quantum technological applications due to their wide tunability of optical properties and coverage of different energy scales associated with charge and spin physics. While previous works have studied the tunnel-coupling of the different excitonic charge complexes shared by the two quantum dots by conventional optical spectroscopy, we here report on the first demonstration of a coherently controlled inter-dot tunnel-coupling focusing on the quantum coherence of the optically active trion transitions. We employ ultrafast four-wave mixing spectroscopy to resonantly generate a quantum coherence in one trion complex, transfer it to and probe it in another trion configuration. With the help of theoretical modelling on different levels of complexity we give an instructive explanation of the underlying coupling mechanism and dynamical processes.

Self-assembled optically active quantum dot molecules (QDMs) allow the creation of protected qubits via singlet-triplet spin states. The qubit energy splitting of these states is defined by the tunnel coupling strength and is, therefore, determined by the potential landscape and thus fixed during growth. Applying an in-plane magnetic field increases the confinement of the hybridized wave functions within the quantum dots, leading to a decrease of the tunnel coupling strength. We achieve a tuning of the coupling strength by $(53.4\pm1.7)$ %. The ability to fine-tune this coupling is essential for quantum network and computing applications that require quantum systems with near identical performance.

Quantum dot molecules (QDMs) are one of the few quantum light sources that promise deterministic generation of one- and two-dimensional photonic graph states. The proposed protocols rely on coherent excitation of the tunnel-coupled and spatially indirect exciton states. Here, we demonstrate power-dependent Rabi oscillations of direct excitons, spatially indirect excitons, and excitons with a hybridized electron wave function. An off-resonant detection technique based on phonon-mediated state transfer allows for spectrally filtered detection under resonant excitation. Applying a gate voltage to the QDM-device enables a continuous transition between direct and indirect excitons and, thereby, control of the overlap of the electron and hole wave function. This does not only vary the Rabi frequency of the investigated transition by a factor of $\approx3$, but also allows to optimize graph state generation in terms of optical pulse power and reduction of radiative lifetimes.

The functionality of phonon-based quantum devices largely depends on the efficiency of interaction of phonons with other excitations. For phonon frequencies above 20 GHz, generation and detection of the phonon quanta can be monitored through photons. The photon-phonon interaction can be enormously strengthened by involving an intermediate resonant quasiparticle, e.g. an exciton, with which a photon forms a polariton. In this work, we discover a giant photoelasticity of exciton-polaritons in a short-period superlattice and exploit it for detecting propagating acoustic phonons. We demonstrate that 42 GHz coherent phonons can be detected with extremely high sensitivity in the time domain Brillouin oscillations by probing with photons in the spectral vicinity of the polariton resonance.

Quantum well (QW) heterostructures have been extensively used for the realization of a wide range of optical and electronic devices. Exploiting their potential for further improvement and development requires a fundamental understanding of their electronic structure. So far, the most commonly used experimental techniques for this purpose have been all-optical spectroscopy methods that, however, are generally averaged in momentum space. Additional information can be gained by angle-resolved photoelectron spectroscopy (ARPES), which measures the electronic structure with momentum resolution. Here we report on the use of extremely low energy ARPES (photon energy $\sim$ 7 eV) to increase its depth sensitivity and access buried QW states, located at 3 nm and 6 nm below the surface of cubic-GaN/AlN and GaAs/AlGaAs heterostructures, respectively. We find that the QW states in cubic-GaN/AlN can indeed be observed, but not their energy dispersion because of the high surface roughness. The GaAs/AlGaAs QW states, on the other hand, are buried too deep to be detected by extremely low energy ARPES. Since the sample surface is much flatter, the ARPES spectra of the GaAs/AlGaAs show distinct features in momentum space, which can be reconducted to the band structure of the topmost surface layer of the QW structure. Our results provide important information about the samples' properties required to perform extremely low energy ARPES experiments on electronic states buried in semiconductor heterostructures.

GaAs-(111)-nanostructures exhibiting second harmonic generation are new building blocks in nonlinear optics. Such structures can be fabricated through epitaxial lift-off employing selective etching of Al-containing layers and subsequent transfer to glass substrates. In this article, the selective etching of (111)B-oriented $Al_x Ga_{1-x}As$ sacrificial layers (10 nm to 50 nm thick) with different aluminum concentrations (x=0.5 to 1.0) in 10 % hydrofluoric acid is investigated and compared to standard (100)-oriented structures. The thinner the sacrificial layer and the lower the aluminum content, the lower the lateral etch rate. For both orientations, the lateral etch rates are in the same order of magnitude, but some quantitative differences exist. Furthermore, the epitaxial lift-off, the transfer, and the nano-patterning of thin (111)B-oriented GaAs membranes is demonstrated. Atomic force microscopy and high-resolution x-ray diffraction measurements reveal the high structural quality of the transferred GaAs-(111) films.

We performed rheological measurements of the typical deep eutectic solvents (DESs) glyceline, ethaline, and reline in a very broad temperature and dynamic range, extending from the low-viscosity to the high-viscosity supercooled-liquid regime. We find that the mechanical compliance spectra can be well described by the random free-energy barrier hopping model, while the dielectric spectra on the same materials involve significant contributions arising from reorientational dynamics. The temperature-dependent viscosity and structural relaxation time, revealing non-Arrhenius behavior typical for glassy freezing, are compared to the ionic dc conductivity and relaxation times determined by broadband dielectric spectroscopy. For glyceline and ethaline we find essentially identical temperature dependences for all dynamic quantities. These findings point to a close coupling of the ionic and molecular translational and reorientational motions in these systems. However, for reline the ionic charge transport appears decoupled from the structural and reorientational dynamics, following a fractional Walden rule. Especially, at low temperatures the ionic conductivity in this DES is enhanced by about one decade compared to expectations based on the temperature dependence of the viscosity. The results for all three DESs can be understood without invoking a revolving-door mechanism previously considered as a possible charge-transport mechanism in DESs.

Self-organized semiconductor quantum dots represent almost ideal two-level systems, which have strong potential to applications in photonic quantum technologies. For instance, they can act as emitters in close-to-ideal quantum light sources. Coupled quantum dot systems with significantly increased functionality are potentially of even stronger interest since they can be used to host ultra-stable singlet-triplet spin qubits for efficient spin-photon interfaces and for a deterministic photonic 2D cluster-state generation. We realize an advanced quantum dot molecule (QDM) device and demonstrate excellent optical properties. The device includes electrically controllable QDMs based on stacked quantum dots in a pin-diode structure. The QDMs are deterministically integrated into a photonic structure with a circular Bragg grating using in-situ electron beam lithography. We measure a photon extraction efficiency of up to (24$\pm$4)% in good agreement with numerical simulations. The coupling character of the QDMs is clearly demonstrated by bias voltage dependent spectroscopy that also controls the orbital couplings of the QDMs and their charge state in quantitative agreement with theory. The QDM devices show excellent single-photon emission properties with a multi-photon suppression of $g^{(2)}(0) = (3.9 \pm 0.5) \cdot 10^{-3}$. These metrics make the developed QDM devices attractive building blocks for use in future photonic quantum networks using advanced nanophotonic hardware.

The coherent electron spin dynamics of an ensemble of singly charged (In,Ga)As/GaAs quantum dots in a transverse magnetic field is driven by periodic optical excitation at 1 GHz repetition frequency. Despite the strong inhomogeneity of the electron $g$ factor, the spectral spread of optical transitions, and the broad distribution of nuclear spin fluctuations, we are able to push the whole ensemble of excited spins into a single Larmor precession mode that is commensurate with the laser repetition frequency. Furthermore, we demonstrate that an optical detuning of the pump pulses from the probed optical transitions induces a directed dynamic nuclear polarization and leads to a discretization of the total magnetic field acting on the electron ensemble. Finally, we show that the highly periodic optical excitation can be used as universal tool for strongly reducing the nuclear spin fluctuations and preparation of a robust nuclear environment for subsequent manipulation of the electron spins, also at varying operation frequencies.

We have performed a dielectric investigation of the ionic charge transport and the relaxation dynamics in plastic-crystalline 1-cyano-adamantane (CNA) and in two mixtures of CNA with the related plastic crystals adamantane or 2-adamantanon. Ionic charge carriers were provided by adding 1% of Li salt. The molecules of these compounds have nearly globular shape and, thus, the so-called revolving-door mechanism assumed to promote ionic charge transport via molecular reorientations in other PC electrolytes, should not be active here. Indeed, a comparison of the dc resistivity and the reorientational alpha-relaxation times in the investigated PCs, reveals complete decoupling of both dynamics. Similar to other PCs, we find a significant mixing-induced enhancement of the ionic conductivity. Finally, these solid-state electrolytes reveal a second relaxation process, slower than the alpha-relaxation, which is related to ionic hopping. Due to the mentioned decoupling, it can be unequivocally detected and is not superimposed by the reorientational contributions as found for most other ionic conductors.

Quantum point contacts (QPC) are fundamental building blocks of nanoelectronic circuits. For their emission dynamics as well as for interaction effects such as the 0.7-anomaly the details of the electrostatic potential are important, but the precise potential shapes are usually unknown. Here, we measure the one-dimensional subband spacings of various QPCs as a function of their conductance and compare our findings with models of lateral parabolic versus hard wall confinement. We find that a gate-defined QPC near pinch-off is compatible with the parabolic saddle point scenario. However, as the number of populated subbands is increased Coulomb screening flattens the potential bottom and a description in terms of a finite hard wall potential becomes more realistic.

Cross-correlated noise measurements are performed in etched Al${}_\text{x}$Ga${}_\text{1-x}$As/GaAs based quantum rings in equilibrium at bath temperature of $T_\text{bath}=4.2\text{ K}$. The measured white noise exceeds the thermal (Johnson-Nyquist) noise expected from the measured electron temperature $T_\text{e}$ and the electrical resistance $R$. This excess part of the white noise decreases as $T_\text{bath}$ increases and vanishes for $T_\text{bath}\geq 12\text{ K}$. Excess noise is neither observed if one arm of a quantum ring is depleted of electrons nor in 1D-constrictions that have a length and width comparable to the quantum rings. A model is presented that suggests that the excess noise originates from the correlation of noise sources, mediated by phase-coherent propagation of electrons.

Heteroepitaxy on nanopatterned substrates is a means of defect reduction at semiconductor heterointerfaces by exploiting substrate compliance and enhanced elastic lattice relaxation resulting from reduced dimensions. We explore this possibility in the InAs/GaAs(111)A system using a combination of nanosphere lithography and reactive ion etching of the GaAs(111)A substrate for nano-patterning of the substrate, yielding pillars with honeycomb and hexagonal arrangements and varied nearest neighbor distances. Substrate patterning is followed by MBE growth of InAs at temperatures of 150 - 350 C and growth rates of 0.011 nm/s and 0.11 nm/s. InAs growth in the form of nano-islands on the pillar tops is achieved by lowering the adatom migration length by choosing a low growth temperature of 150 C at the growth rate 0.011 nm/s. The choice of a higher growth rate of 0.11 nm/s results in higher InAs island nucleation and the formation of hillocks concentrated at the pillar bases due to a further reduction of adatom migration length. A common feature of the growth morphology for all other explored conditions is the formation of merged hillocks or pyramids with well-defined facets due to the presence of a concave surface curvature at the pillar bases acting as adatom sinks.

We analyze the shape and position of heteroepitaxial InAs islands on the top face of cylindrical GaAs(111)A nanopillars experimentally and theoretically. Catalyst-free molecular beam epitaxial growth of InAs at low temperatures on GaAs nanopillars results in InAs islands with diameters < 30 nm exhibiting predominantly rounded triangular in-plane shapes. The islands show a tendency to grow at positions displaced from the center towards the pillar edge. Atomistic molecular statics simulations evidence that triangular-prismatic islands centered to the pillar axis with diameters smaller than that of the nanopillars are energetically favored. Moreover, we reveal the existence of minimum-energy states for off-axis island positions, in agreement with the experiment. These findings are interpreted by evaluating the spatial strain distributions and the number of broken bonds of surface atoms as a measure for the surface energy. The preferred off-axis island positions can be understood in terms of an increased compliancy of the GaAs nanopillar beneath the island because of the vicinity of free surfaces, leading to a reduction of strain energy. The influence of surface steps on the energy of the system is addressed as well.

The single-crystal growth, stoichiometry, and structure of Rb1-xFe2-ySe2-zSz crystals with substitution of Se by S are reported. The variation of the magnetic and thermodynamic parameters of samples was studied by differential-scanning calorimetry, magnetic susceptibility, conductivity, and specific heat. The experimental results are discussed within a T-z phase diagram, which includes vacancy-ordered and vacancy-disordered antiferromagnetic (AFM), superconducting (SC), and non-superconducting phases. The structural study revealed change in the local environment of the Fe tetrahedrons depending on substitution: a reduction of the Fe-Fe and Fe-Ch(chalcogen) bond lengths and a tendency for the six out of eight bond angles to approach values for a regular tetrahedron suggesting a reduction of structural distortions with substitution. With increasing substitution, a lowering of the superconducting transition temperature Tc was observed; the percolation threshold for the SC state is located at the substitution z = 1.2. The SC state was found to coexist with the AFM state that persists in all samples independent of substitution. The temperature of the transition into the AFM state TN shows a monotonous decrease indicating a weakening of the AFM interactions with increasing substitution. The AFM phase exhibits an iron-vacancy-ordered structure below the structural transition at Ts. The temperature Ts shows a non-monotonous variation: a decrease with increasing z up to 1.3, followed by an increase for further increasing z. The suppression of the superconductivity with substitution is accompanied by a significant reduction of the density of states at the Fermi energy and a weakening of the electronic correlations in the studied system.

We investigate the dielectric response in the glass-electret state of two dipolar glass-forming materials. This unusual polar glassy state of matter is produced when a dipolar liquid is supercooled under the influence of a high electric dc field, which leads to partial orientational order of the molecules carrying a dipole moment. Investigation of the prepared glass-electrets by using low-field dielectric spectroscopy reveals a clear modification of their dielectric response in the regime of the Johari-Goldstein beta-relaxation, pointing to a small but significant increase of its relaxation strength compared to the normal glass. We discuss the implications of this finding for the still controversial microscopic interpretation of the Johari-Goldstein relaxation, an inherent property of glassy matter.

Many plastic crystals, molecular solids with long-range, center-of-mass crystalline order but dynamic disorder of the molecular orientations, are known to exhibit exceptionally high ionic conductivity. This makes them promising candidates for applications as solid-state electrolytes, e.g., in batteries. Interestingly, it was found that the mixing of two different plastic-crystalline materials can considerably enhance the ionic dc conductivity, an important benchmark quantity for electrochemical applications. An example is the admixture of different nitriles to succinonitrile, the latter being one of the most prominent plastic-crystalline ionic conductors. However, until now only few such mixtures were studied. In the present work, we investigate succinonitrile mixed with malononitrile, adiponitrile, and pimelonitrile, to which 1 mol% of Li ions were added. Using differential scanning calorimetry and dielectric spectroscopy, we examine the phase behavior and the dipolar and ionic dynamics of these systems. We especially address the mixing-induced enhancement of the ionic conductivity and the coupling of the translational ionic mobility to the molecular reorientational dynamics, probably arising via a "revolving-door" mechanism.

We have performed a thorough examination of the reorientational relaxation dynamics and the ionic charge transport of three typical deep eutectic solvents, ethaline, glyceline and reline by broadband dielectric spectroscopy. Our experiments cover a broad temperature range from the low-viscosity liquid down to the deeply supercooled state, allowing to investigate the significant influence of glassy freezing on the ionic charge transport in these systems. In addition, we provide evidence for a close coupling of the ionic conductivity in these materials to reorientational dipolar motions which should be considered when searching for deep eutectic solvents optimized for electrochemical applications.

The spin inertia measurement is a recently emerged tool to study slow spin dynamics, which is based on the excitation of the system by a train of circularly polarized pulses with alternating helicity. Motivated by the experimental results reported in E. A. Zhukov et al., arXiv:1806.11100 we develop the general theory of spin inertia of localized charge carriers. We demonstrate that the spin inertia measurement in longitudinal magnetic field allows one to determine the parameters of the spin dynamics of resident charge carriers and of photoexcited trions, such as the spin relaxation times, longitudinal g-factors, parameters of hyperfine interaction and nuclear spin correlation times.

The spin dynamics in a broad range of systems can be studied using circularly polarized optical excitation with alternating helicity. The dependence of spin polarization on the frequency of helicity alternation, known as the spin inertia effect, is used here to study the spin dynamics in singly-charged (In,Ga)As/GaAs quantum dots (QDs) providing insight into spin generation and accumulation processes. We demonstrate that the dependence of spin polarization in $n$- and $p$-type QDs on the external magnetic field has a characteristic V- and M-like shape, respectively. This difference is related to different microscopic mechanisms of resident carriers spin orientation. It allows us to determine the parameters of the spin dynamics both for the ground and excited states of singly-charged QDs.

Most ionic liquids contain at least one rather complex ion species exhibiting a dipolar moment. In the present work, we provide a thorough evaluation of broadband dielectric spectra of 12 ionic liquids taking into account the often neglected reorientational dynamics of these ions. We confirm that this dynamics leads to a clear relaxational signature in the spectra, a fact that so far only was considered in few previous works. The obtained reorientational relaxation times are well consistent with earlier inelastic light-scattering and high-frequency dielectric investigations. Evaluating our dielectric spectra in terms of reorientational motions reveals a close coupling of the ion-rotation dynamics to the ionic charge transport in a broad temperature range from the low-viscosity liquid above room temperature deep into the high-viscosity supercooled state close to Tg. This coupling does not seem to be mediated by the viscosity but probably is of more direct nature, pointing to a revolving-door mechanism as also considered for plastic-crystalline ionic conductors. Our results show that the reorientational motion of the dipolar ions plays a significant and so far widely overlooked role for the ionic charge transport in ionic liquids.

The periodic optical orientation of electron spins in (In,Ga)As/GaAs quantum dots leads to the formation of electron spin precession modes about an external magnetic field which are resonant with the pumping periodicity. As the electron spin is localized within a nuclear spin bath, its polarization imprints onto the spin polarization of the bath. The latter acts back on the electron spin polarization. We implement a pulse protocol where a train of laser pulses is followed by a long, dark gap. It allows us to obtain a high-resolution precession mode spectrum from the free evolution of the electron spin polarization. Additionally, we vary the number of pump pulses in a train to investigate the build-up of the precession modes. To separate out nuclear effects, we suppress the nuclear polarization by using a radio-frequency field. We find that a long-living nuclear spin polarization imprinted by the periodic excitation significantly speeds up the buildup of the electron spin polarization and induces the formation of additional electron spin precession modes. To interpret these findings, we extend an established dynamical nuclear polarization model to take into account optically detuned quantum dots for which nuclear spins activate additional electron spin precession modes.

Ionically-conducting plastic crystals are possible candidates for solid-state electrolytes in energy-storage devices. Interestingly, the admixture of larger molecules to the most prominent molecular PC electrolyte, succinonitrile, was shown to drastically enhance its ionic conductivity. Therefore, binary mixtures seem to be a promising way to tune the conductivity of such solid-state electrolytes. However, to elucidate the general mechanisms of ionic charge transport in plastic crystals and the influence of mixing, a much broader data base is needed. In the present work, we investigate mixtures of two well-known plastic-crystalline systems, cyclohexanol and cyclooctanol, to which 1 mol% of Li ions were added. Applying differential scanning calorimetry and dielectric spectroscopy, we present a thorough investigation of the phase behavior and the ionic and dipolar dynamics of this system. All mixtures reveal plastic-crystalline phases with corresponding orientational glass-transitions. Moreover, their conductivity seems to be dominated by the "revolving-door" mechanism, implying a close coupling between the ionic translational and the molecular reorientational dynamics of the surrounding plastic-crystalline matrix. In contrast to succinonitrile-based mixtures, there is no strong variation of this coupling with the mixing ratio.

The spin noise in singly charged self-assembled quantum dots is studied theoretically and experimentally under the influence of a perturbation, provided by additional photoexcited charge carriers. The theoretical description takes into account generation and relaxation of charge carriers in the quantum dot system. The spin noise is measured under application of above barrier excitation for which the data are well reproduced by the developed model. Our analysis demonstrates a strong difference of the recharging dynamics for holes and electrons in quantum dots.

Ionic liquids are promising candidates for electrolytes in energy-storage systems. We demonstrate that mixing two ionic liquids allows to precisely tune their physical properties, like the dc conductivity. Moreover, these mixtures enable the gradual modification of the fragility parameter, which is believed to be a measure of the complexity of the energy landscape in supercooled liquids. The physical origin of this index is still under debate; therefore, mixing ionic liquids can provide further insights. From the chemical point of view, tuning ionic liquids via mixing is an easy and thus an economic way. For this study, we performed detailed investigations by broadband dielectric spectroscopy and differential scanning calorimetry on two mixing series of ionic liquids. One series combines an imidazole based with a pyridine based ionic liquid and the other two different anions in an imidazole based ionic liquid. The analysis of the glass-transition temperatures and the thorough evaluations of the measured dielectric permittivity and conductivity spectra reveal that the dynamics in mixtures of ionic liquids are well defined by the fractions of their parent compounds.

We investigate the relationship between the Zeeman interaction and the inversion asymmetry induced spin orbit interactions (Rashba and Dresselhaus SOIs) in GaAs hole quantum point contacts. The presence of a strong SOI results in crossing and anti-crossing of adjacent spin-split hole subbands in a magnetic field. We demonstrate theoretically and experimentally that the anti-crossing energy gap depends on the interplay between the SOI terms and the highly anisotropic hole g tensor, and that this interplay can be tuned by selecting the crystal axis along which the current and magnetic field are aligned. Our results constitute independent detection and control of the Dresselhaus and Rashba SOIs in hole systems, which could be of importance for spintronics and quantum information applications.

Photoluminescence polarization is experimentally studied for samples with (In,Ga)As/GaAs selfassembled quantum dots in transverse magnetic field (Hanle effect) under slow modulation of the excitation light polarization from fractions of Hz to tens of kHz. The polarization reflects the evolution of strongly coupled electron-nuclear spin system in the quantum dots. Strong modification of the Hanle curves under variation of the modulation period is attributed to the peculiarities of the spin dynamics of quadrupole nuclei, which states are split due to deformation of the crystal lattice in the quantum dots. Analysis of the Hanle curves is fulfilled in the framework of a phenomenological model considering a separate dynamics of a nuclear field BNd determined by the +/- 12 nuclear spin states and of a nuclear field BNq determined by the split-off states +/- 3/2, +/- 5/2, etc. It is found that the characteristic relaxation time for the nuclear field BNd is of order of 0.5 s, while the relaxation of the field BNq is faster by three orders of magnitude.

Using dielectric spectroscopy and differential scanning calorimetry, we have performed a detailed investigation of the influence of water uptake on the translational and reorientational glassy dynamics in the typical ionic liquid 1-Butyl-3-methyl-imidazolium chloride. From a careful analysis of the measured dielectric permittivity and conductivity spectra, we find a significant acceleration of cation reorientation and a marked increase of the ionic conductivity for higher water contents. The latter effect mainly arises due to a strong impact of water content on the glass temperature, which for the well-dried material is found to be larger than any values reported in literature for this system. The fragility, characterizing the non-Arrhenius glassy dynamics of the ionic subsystem, also changes with varying water content. Decoupling of the ionic motion from the structural dynamics has to be considered to explain the results.

A microscopic study of the individual annealed (In,Ga)As/GaAs quantum dots is done by means of high-resolution transmission electron microscopy. The Cauchy-Green strain-tensor component distribution and the chemical composition of the (In,Ga)As alloy are extracted from the microscopy images. The image processing allows for the reconstruction of the strain-induced electric-field gradients at the individual atomic columns extracting thereby the magnitude and asymmetry parameter of the nuclear quadrupole interaction. Nuclear magnetic resonance absorption spectra are analyzed for parallel and transverse mutual orientations of the electric-field gradient and a static magnetic field.

We investigate monocrystalline InAs nanowires (NWs) which are grown by molecular beam epitaxy (MBE) and induced by focused ion beam (FIB) implanted Au spots. With this unique combination of methods an increase of the aspect ratio, i.e. the length to width ratio, of the grown NWs up to 300 was achieved. To control the morphology and crystalline structure of the NWs, the growth parameters like temperature, flux ratios and implantation fluence are varied and optimized. Furthermore, the influence of the used molecular arsenic species, in particular the As$_2$ to As$_4$ ratio, is investigated and adjusted. In addition to the high aspect ratio, this optimization results in the growth of monocrystalline InAs NWs with a negligible number of stacking faults. Single NWsx were placed site-controlled by FIB implantation, which supplements the working field of area growth.

Finding new ionic conductors that enable significant advancements in the development of energy-storage devices is a challenging goal of current material science. Aside of material classes as ionic liquids or amorphous ion conductors, the so-called plastic crystals (PCs) have been shown to be good candidates combining high conductivity and favourable mechanical properties. PCs are formed by molecules whose orientational degrees of freedom still fluctuate despite the material exhibits a well-defined crystalline lattice. Here we show that the conductivity of Li+ ions in succinonitrile, the most prominent molecular PC electrolyte, can be enhanced by several decades when replacing part of the molecules in the crystalline lattice by larger ones. Dielectric spectroscopy reveals that this is accompanied by a stronger coupling of ionic and reorientational motions. These findings, which can be understood in terms of an optimised "revolving door" mechanism, open a new path towards the development of better solid-state electrolytes.

We experimentally demonstrate how coherent population trapping (CPT) for donor-bound electron spins in GaAs results in autonomous feedback that prepares stabilized states for the spin polarization of nuclei around the electrons. CPT was realized by excitation with two lasers to a bound-exciton state. Transmission studies of the spectral CPT feature on an ensemble of electrons directly reveal the statistical distribution of prepared nuclear spin states. Tuning the laser driving from blue to red detuned drives a transition from one to two stable states. Our results have importance for ongoing research on schemes for dynamic nuclear spin polarization, the central spin problem and control of spin coherence.

We introduce a confocal shift-interferometer based on optical fibers. The presented spectroscopy allows measuring coherence maps of luminescent samples with a high spatial resolution even at cryogenic temperatures. We apply the spectroscopy onto electrostatically trapped, dipolar excitons in a semiconductor double quantum well. We find that the measured spatial coherence length of the excitonic emission coincides with the point spread function of the confocal setup. The results are consistent with a temporal coherence of the excitonic emission down to temperatures of 250 mK.

Cross-correlated measurements of thermal noise are performed to determine the electron temperature in nanopatterned channels of a GaAs/AlGaAs heterostructure at 4.2 K. Two-dimensional (2D) electron reservoirs are connected via an extended one-dimensional (1D) electron waveguide network. Hot electrons are produced using a current $I_{\text{h}}$ in a source 2D reservoir, are transmitted through the ballistic 1D waveguide and relax in a drain 2D reservoir. We find that the electron temperature increase ${\Delta}T_{\text{e}}$ in the drain is proportional to the square of the heating current $I_{\text{h}}$, as expected from Joule's law. No temperature increase is observed in the drain when the 1D waveguide does not transmit electrons. Therefore, we conclude that electron-phonon interaction is negligible for heat transport between 2D reservoirs at temperatures below 4.2 K. Furthermore, mode control of the 1D electron waveguide by application of a top-gate voltage reveals that ${\Delta}T_{\text{e}}$ is not proportional to the number of populated subbands $N$, as previously observed in single 1D conductors. This can be explained with the splitting of the heat flow in the 1D waveguide network.

We analyze theoretically and experimentally how nonlinear differential-transmission spectroscopy of a lambda-system medium can provide quantitative understanding of the optical dipole moments and transition energies. We focus on the situation where two optical fields spatially overlap and co-propagate to a single detector. Nonlinear interactions give cross-modulation between a modulated and non-modulated laser field, yielding differential transmission signals. Our analysis shows how this approach can be used to enhance the visibility of relatively weak transitions, and how particular choices in the experimental design minimize systematic errors and the sensitivity to changes in laser field intensities. Experimentally, we demonstrate the relevance of our analysis with spectroscopy on the donor-bound exciton system of silicon donors in GaAs, where the transitions from the two bound-electron spin states to a bound-exciton state form a lambda system. Our approach is, however, of generic value for many spectroscopy experiments on solid-state systems in small cryogenic measurement volumes where in-situ frequency or polarization filtering of control and signal fields is often challenging.

The study of electron transport in low-dimensional systems is of importance, not only from a fundamental point of view, but also for future electronic and spintronic devices. In this context heterostructures containing a two-dimensional electron gas (2DEG) are a key technology. In particular GaAs/AlGaAs heterostructures, with a 2DEG at typically 100 nm below the surface, are widely studied. In order to explore electron transport in such systems, low-resistance ohmic contacts are required that connect the 2DEG to macroscopic measurement leads at the surface. Here we report on designing and measuring a dedicated device for unraveling the various resistance contributions in such contacts, which include pristine 2DEG series resistance, the 2DEG resistance under a contact, the contact resistance itself, and the influence of pressing a bonding wire onto a contact. We also report here a robust recipe for contacts with very low resistance, with values that do not change significantly for annealing times between 20 and 350 sec, hence providing the flexibility to use this method for materials with different 2DEG depths. The type of heating used for annealing is found to strongly influence the annealing process and hence the quality of the resulting contacts.

Resonant transmission through electronic quantum states that exist at the zero points of a magnetic field gradient inside a ballistic quantum wire is reported. Since the semiclassical motion along such a line of zero magnetic field takes place in form of unidirectional snake trajectories, these states have no classical equivalence. The existence of such quantum states has been predicted more than a decade ago by theoretical considerations of Reijniers and coworkers [1]. We further show how their properties depend on the amplitude of the magnetic field profile as well as on the Fermi energy.

We report on a high resolution x-ray diffraction study unveiling the effect of carriers optically injected into (In,Ga)As quantum dots on the surrounding GaAs crystal matrix. We find a tetragonal lattice expansion with enhanced elongation along the [001] crystal axis that is superimposed on an isotropic lattice extension. The isotropic contribution arises from excitation induced lattice heating as confirmed by temperature dependent reference studies. The tetragonal expansion on the femtometer scale is attributed to polaron formation by carriers trapped in the quantum dots.

We demonstrate the potential of a periodic laser-pulse protocol for dynamic decoupling of hole spins in (In,Ga)As quantum dots from surrounding baths. When doubling the repetition rate of inversionlaser pulses between two reference pulses for orienting the spins, we find that the spin coherence time is increased by a factor of two.

The photoluminescence polarizations of (In,Ga)As/GaAs quantum dots annealed at different temperatures are studied as a function of external magnetic field (Hanle curves). In these dependencies, remarkable resonant features appear due to all-optical nuclear magnetic resonances (NMR) for optical excitation with modulated circular polarization. Application of an additional radio-frequency field synchronously with the polarization modulation strongly modifies the NMR features. The resonances can be related to transitions between different nuclear spin states split by the strain-induced gradient of the crystal field and by the externally applied magnetic field. A theoretical model is developed to simulate quadrupole and Zeeman splittings of the nuclear spins in a strained quantum dot. Comparison with the experiment allows us to uniquely identify the observed resonances. The large broadening of the NMR resonances is attributed to variations of the quadrupole splitting within the quantum dot volume, which is well described by the model.

We fabricated an etched hole quantum dot in a Si-doped (311)A AlGaAs/GaAs heterostructure to study disorder effects via magnetoconductance fluctuations (MCF) at millikelvin temperatures. Recent experiments in electron quantum dots have shown that the MCF is sensitive to the disorder potential created by remote ionised impurities. We utilize this to study the temporal/thermal stability of Si acceptors in p-type AlGaAs/GaAs heterostructures. In particular, we use a surface gate to cause charge migration between Si acceptor sites at T = 40 mK, and detect the ensuing changes in the disorder potential using the MCF. We show that Si acceptors are metastable at T = 40 mK and that raising the device to a temperature T = 4.2 K and returning to T = 40 mK is sufficient to produce complete decorrelation of the MCF. The same decorrelation occurs at T ~ 165 K for electron quantum dots; by comparing with the known trap energy for Si DX centers, we estimate that the shallow acceptor traps in our heterostructures have an activation energy EA ~ 3 meV. Our method can be used to study charge noise and dopant stability towards optimisation of semiconductor materials and devices.

A quantum point contact (QPC) is a very basic nano-electronic device: a short and narrow transport channel between two electron reservoirs. In clean channels electron transport is ballistic and the conductance $G$ is then quantised as a function of channel width with plateaus at integer multiples of $2e^2/h$ ($e$ is the electron charge and $h$ Planck's constant). This can be understood in a picture where the electron states are propagating waves, without need to account for electron-electron interactions. Quantised conductance could thus be the signature of ultimate control over nanoscale electron transport. However, even studies with the cleanest QPCs generically show significant anomalies on the quantised conductance traces and there is consensus that these result from electron many-body effects. Despite extensive experimental and theoretical studies understanding of these anomalies is an open problem. We report evidence that the many-body effects have their origin in one or more spontaneously localised states that emerge from Friedel oscillations in the QPC channel. Kondo physics will then also contribute to the formation of the many-body state with Kondo signatures that reflect the parity of the number of localised states. Evidence comes from experiments with length-tunable QPCs that show a periodic modulation of the many-body physics with Kondo signatures of alternating parity. Our results are of importance for assessing the role of QPCs in more complex hybrid devices and proposals for spintronic and quantum information applications. In addition, our results show that tunable QPCs offer a rich platform for investigating many-body effects in nanoscale systems, with the ability to probe such physics at the level of a single site.

A semiconductor quantum dot mimics a two-level atom. Performance as a single photon source is limited by decoherence and dephasing of the optical transition. Even with high quality material at low temperature, the optical linewidths are a factor of two larger than the transform-limit. A major contributor to the inhomogeneous linewdith is the nuclear spin noise. We show here that the nuclear spin noise depends on optical excitation, increasing (decreasing) with increasing resonant laser power for the neutral (charged) exciton. Based on this observation, we discover regimes where we demonstrate transform-limited linewidths on both neutral and charged excitons even when the measurement is performed very slowly.

Single quantum dots are solid-state emitters which mimic two-level atoms but with a highly enhanced spontaneous emission rate. A single quantum dot is the basis for a potentially excellent single photon source. One outstanding problem is that there is considerable noise in the emission frequency, making it very difficult to couple the quantum dot to another quantum system. We solve this problem here with a dynamic feedback technique that locks the quantum dot emission frequency to a reference. The incoherent scattering (resonance fluorescence) represents the single photon output whereas the coherent scattering (Rayleigh scattering) is used for the feedback control. The fluctuations in emission frequency are reduced to 20 MHz, just ~ 5% of the quantum dot optical linewidth, even over several hours. By eliminating the 1/f-like noise, the relative fluctuations in resonance fluorescence intensity are reduced to ~ 10E-5 at low frequency. Under these conditions, the antibunching dip in the resonance fluorescence is described extremely well by the two-level atom result. The technique represents a way of removing charge noise from a quantum device.

We present low-temperature transport experiments on Aharonov-Bohm (AB) rings fabricated from two-dimensional hole gases in p-type GaAs/AlGaAs heterostructures. Highly visible h/e (up to 15%) and h/2e oscillations, present for different gate voltages, prove the high quality of the fabricated devices. Like in previous work, a clear beating pattern of the h/e and h/2e oscillations is present in the magnetoresistance, producing split peaks in the Fourier spectrum. The magnetoresistance evolution is presented and discussed as a function of temperature and gate voltage. It is found that sample specific properties have a pronounced influence on the observed behavior. For example, the interference of different transverse modes or the interplay between h/e oscillations and conductance fluctuations can produce the features mentioned above. In previous work they have occasionally been interpreted as signatures of spin-orbit interaction (SOI)-induced effects. In the light of these results, the unambiguous identification of SOI-induced phase effects in AB rings remains still an open and challenging experimental task.

We have measured the zero bias peak in differential conductance in a hole quantum dot. We have scaled the experimental data with applied bias and compared to real time renormalization group calculations of the differential conductance as a function of source-drain bias in the limit of zero temperature and at finite temperatures. The experimental data show deviations from the T=0 calculations at low bias, but are in very good agreement with the finite T calculations. The Kondo temperature T_K extracted from the data using T=0 calculations, and from the peak width at 2/3 maximum, is significantly higher than that obtained from finite T calculations.

The role of nuclear spin fluctuations in the dynamic polarization of nuclear spins by electrons is investigated in (In,Ga)As quantum dots. The photoluminescence polarization under circularly polarized optical pumping in transverse magnetic fields (Hanle effect) is studied. A weak additional magnetic field parallel to the optical axis is used to control the efficiency of nuclear spin cooling and the sign of nuclear spin temperature. The shape of the Hanle curve is drastically modified with changing this control field, as observed earlier in bulk semiconductors and quantum wells. However, the standard nuclear spin cooling theory, operating with the mean nuclear magnetic field (Overhauser field), fails to describe the experimental Hanle curves in a certain range of control fields. This controversy is resolved by taking into account the nuclear spin fluctuations owed to the finite number of nuclei in the quantum dot. We propose a model describing cooling of the nuclear spin system by electron spins experiencing fast vector precession in the random Overhauser fields of nuclear spin fluctuations. The model allows us to accurately describe the measured Hanle curves and to determine the parameters of the electron-nuclear spin system of the studied quantum dots.

Optically active quantum dots, for instance self-assembled InGaAs quantum dots, are potentially excellent single photon sources. The fidelity of the single photons is much improved using resonant rather than non-resonant excitation. With resonant excitation, the challenge is to distinguish between resonance fluorescence and scattered laser light. We have met this challenge by creating a polarization-based dark-field microscope to measure the resonance fluorescence from a single quantum dot at low temperature. We achieve a suppression of the scattered laser exceeding a factor of 10^7 and background-free detection of resonance fluorescence. The same optical setup operates over the entire quantum dot emission range 920-980 nm and also in high magnetic fields. The major development is the outstanding long-term stability: once the dark-field point has been established, the microscope operates for days without alignment. The mechanical and optical design of the microscope is presented, as well as exemplary resonance fluorescence spectroscopy results on individual quantum dots to underline the microscope's excellent performance.

Low-temperature transport experiments on a p-type GaAs quantum dot capacitively coupled to a quantum point contact are presented. The time-averaged as well as time-resolved detection of charging events of the dot are demonstrated and they are used to extract the tunnelling rates into and out of the quantum dot. The extracted rates exhibit a super-linear enhancement with the bias applied across the dot which is interpreted in terms of a dense spectrum of excited states contributing to the transport, characteristic for heavy hole systems. The full counting statistics of charge transfer events and the effect of back action is studied. The normal cumulants as well as the recently proposed factorial cumulants are calculated and discussed in view of their importance for interacting systems.

The out-of-plane g-factor g_perp for quasi-2D holes in a (100) GaAs heterostructure is studied using a variable width quantum wire. A direct measurement of the Zeeman splitting is performed in a magnetic field applied perpendicular to the 2D plane. We measure an out-of-plane g-factor up to g_perp = 5, which is larger than previous optical studies of g_perp, and is approaching the long predicted but never experimentally veri?ed out-of-plane g-factor of 7.2 for heavy holes.

Low-temperature electrical conductance spectroscopy measurements of quantum point contacts implemented in p-type GaAs/AlGaAs heterostructures are used to study the Zeeman splitting of 1D subbands for both in-plane and out-of-plane magnetic field orientations. The resulting in-plane g-factors agree qualitatively with those of previous experiments on quantum wires while the quantitative differences can be understood in terms of the enhanced quasi-1D confinement anisotropy. The influence of confinement potential on the anisotropy is discussed and an estimate for the out-of-plane g-factor is obtained which, in contrast to previous experiments, is closer to the theoretical prediction.

Low temperature transport measurements on a p-GaAs quantum point contact are presented which reveal the presence of a conductance anomaly that is markedly different from the conventional `0.7 anomaly'. A lateral shift by asymmetric gating of the conducting channel is utilized to identify and separate different conductance anomalies of local and generic origins experimentally. While the more generic 0.7 anomaly is not directly affected by changing the gate configuration, a model is proposed which attributes the additional conductance features to a gate-dependent coupling of the propagating states to localized states emerging due to a nearby potential imperfection. Finite bias conductivity measurements reveal the interplay between the two anomalies consistently with a two-impurity Kondo model.

The temperature dependence of the coherence time of hole spins confined in self-assembled (In,Ga)As/GaAs quantum dots is studied by spin mode-locking and spin echo techniques. Coherence times limited to about a \mu s are measured for temperatures below 8 K. For higher temperatures a fast drop occurs down to a few ns over a 10 K range. The hole-nuclear hyperfine interaction appears too weak to account for these limitations. We suggest that spin-orbit related interactions are the decisive sources for hole spin decoherence.

Exchange-mediated fine-structure splitting of bright excitons in an ensemble of InAs quantum dots is studied using optical two-dimensional Fourier-transform spectroscopy. By monitoring the non-radiative coherence between the bright states, we find that the fine-structure splitting decreases with increasing exciton emission energy at a rate of 0.1 $\mu$eV/meV. Dephasing rates are compared to population decay rates to reveal that pure dephasing causes the exciton optical coherences to decay faster than the radiative limit at low temperature, independent of excitation density. Fluctuations of the bright state transition energies are nearly perfectly-correlated, protecting the non-radiative coherence from interband dephasing mechanisms.

We have studied the efficacy of (NH4)2Sx surface passivation on the (311)A GaAs surface. We report XPS studies of simultaneously-grown (311)A and (100) heterostructures showing that the (NH4)2Sx solution removes surface oxide and sulfidizes both surfaces. Passivation is often characterized using photoluminescence measurements, we show that while (NH4)2Sx treatment gives a 40 - 60 x increase in photoluminescence intensity for the (100) surface, an increase of only 2 - 3 x is obtained for the (311)A surface. A corresponding lack of reproducible improvement in the gate hysteresis of (311)A heterostructure transistor devices made with the passivation treatment performed immediately prior to gate deposition is also found. We discuss possible reasons why sulfur passivation is ineffective for (311)A GaAs, and propose alternative strategies for passivation of this surface.

Exciton, trion and biexciton dephasing rates are measured within the inhomogeneous distribution of an InAs quantum dot (QD) ensemble using two-dimensional Fourier-transform spectroscopy. The dephasing rate of each excitonic state is similar for all QDs in the ensemble and the rates are independent of excitation density. An additional spectral feature -- too weak to be observed in the time-integrated four-wave mixing signal -- appears at high excitation density and is attributed to the $\chi^{\textrm{(5)}}$ biexcitonic nonlinear response.

Gate instability/hysteresis in modulation-doped p-type AlGaAs/GaAs heterostructures impedes the development of nanoscale hole devices, which are of interest for topics from quantum computing to novel spin physics. We present an extended study conducted using custom-grown, matched modulation-doped n-type and p-type heterostructures, with/without insulated gates, aimed at understanding the origin of the hysteresis. We show the hysteresis is not due to the inherent `leakiness' of gates on p-type heterostructures, as commonly believed. Instead, hysteresis arises from a combination of GaAs surface-state trapping and charge migration in the doping layer. Our results provide insights into the physics of Si acceptors in AlGaAs/GaAs heterostructures, including widely-debated acceptor complexes such as Si-X. We propose methods for mitigating the gate hysteresis, including poisoning the modulation-doping layer with deep-trapping centers (e.g., by co-doping with transition metal species), and replacing the Schottky gates with degenerately-doped semiconductor gates to screen the conducting channel from GaAs surface-states.

We report on developing split-gate quantum point contacts (QPCs) that have a tunable length for the transport channel. The QPCs were realized in a GaAs/AlGaAs heterostructure with a two- dimensional electron gas (2DEG) below its surface. The conventional design uses 2 gate fingers on the wafer surface which deplete the 2DEG underneath when a negative gate voltage is applied, and this allows for tuning the width of the QPC channel. Our design has 6 gate fingers and this provides additional control over the form of the electrostatic potential that defines the channel. Our study is based on electrostatic simulations and experiments and the results show that we developed QPCs where the effective channel length can be tuned from about 200 nm to 600 nm. Length-tunable QPCs are important for studies of electron many-body effects because these phenomena show a nanoscale dependence on the dimensions of the QPC channel.

The intrinsic fluctuations of electron spins in semiconductors and atomic vapors generate a small, randomly-varying "spin noise" that can be detected by sensitive optical methods such as Faraday rotation. Recent studies have demonstrated that the frequency, linewidth, and lineshape of this spin noise directly reveals dynamical spin properties such as dephasing times, relaxation mechanisms and g-factors without perturbing the spins away from equilibrium. Here we demonstrate that spin noise measurements using wavelength-tunable probe light forms the basis of a powerful and novel spectroscopic tool to provide unique information that is fundamentally inaccessible via conventional linear optics. In particular, the wavelength dependence of the detected spin noise power can reveal homogeneous linewidths buried within inhomogeneously-broadened optical spectra, and can resolve overlapping optical transitions belonging to different spin systems. These new possibilities are explored both theoretically and via experiments on spin systems in opposite limits of inhomogeneous broadening (alkali atom vapors and semiconductor quantum dots).

With gate-defined electrostatic traps fabricated on a double quantum well we are able to realize an optically active and voltage-tunable quantum dot confining individual, long-living, spatially indirect excitons. We study the transition from multi excitons down to a single indirect exciton. In the few exciton regime, we observe discrete emission lines reflecting the interplay of dipolar interexcitonic repulsion and spatial quantization. The quantum dot states are tunable by gate voltage and employing a magnetic field results in a diamagnetic shift. The scheme introduces a new gate-defined platform for creating and controlling optically active quantum dots and opens the route to lithographically defined coupled quantum dot arrays with tunable in-plane coupling and voltage-controlled optical properties of single charge and spin states.

We have fabricated AlGaAs/GaAs heterostructure devices in which the conduction channel can be populated with either electrons or holes simply by changing the polarity of a gate bias. The heterostructures are entirely undoped, and carriers are instead induced electrostatically. We use these devices to perform a direct comparison of the scattering mechanisms of two-dimensional (2D) electrons ($\mu_\textrm{peak}=4\times10^6\textrm{cm}^2/\textrm{Vs}$) and holes ($\mu_\textrm{peak}=0.8\times10^6\textrm{cm}^2/\textrm{Vs}$) in the same conduction channel with nominally identical disorder potentials. We find significant discrepancies between electron and hole scattering, with the hole mobility being considerably lower than expected from simple theory.

Avoided crossing of the emission lines of a nearly free positive trion and a cyclotron replica of an exciton bound to an interface acceptor has been observed in the magneto-photoluminescence spectra of p-doped GaAs quantum wells. Identification of the localized state depended on the precise mapping of the anti-crossing pattern. The underlying coupling is caused by an exciton transfer combined with a resonant cyclotron excitation of an additional hole. The emission spectrum of the resulting magnetically tunable coherent state probes weak localization in the quantum well.

The problem of how single "central" spins interact with a nuclear spin bath is essential for understanding decoherence and relaxation in many quantum systems, yet is highly nontrivial owing to the many-body couplings involved. Different models yield widely varying timescales and dynamical responses (exponential, power-law, Gaussian, etc). Here we detect the small random fluctuations of central spins in thermal equilibrium (holes in singly-charged (In,Ga)As quantum dots) to reveal the timescales and functional form of bath-induced spin relaxation. This spin noise indicates long (400 ns) spin correlation times at zero magnetic field, that increase to $\sim$5 $\mu$s as hole-nuclear coupling is suppressed with small (100 G) applied fields. Concomitantly, the noise lineshape evolves from Lorentzian to power-law, indicating a crossover from exponential to inverse-log dynamics.