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The van der Waals (vdW) type-II multiferroic NiI$_2$ has emerged as a candidate for exploring non-collinear magnetism and magnetoelectric effects in the 2D limit. Frustrated intralayer exchange interactions on a triangular lattice result in a helimagnetic ground state, with spin-induced improper ferroelectricity stabilized by the interlayer interactions. Here we investigate the magnetic and structural phase transitions in bulk NiI$_2$, using high-pressure Raman spectroscopy, optical linear dichroism, and x-ray diffraction. We obtain evidence for a significant pressure enhancement of the antiferromagnetic and helimagnetic transition temperatures, at rates of $\sim15.3/14.4$ K/GPa, respectively. These enhancements are attributed to a cooperative effect of pressure-enhanced interlayer and third-nearest-neighbor intralayer exchange. These results reveal a general path for obtaining high-temperature type-II multiferroicity via high pressures in vdW materials.

Transition metal dihalides have recently garnered interest in the context of two-dimensional van der Waals magnets as their underlying geometrically frustrated triangular lattice leads to interesting competing exchange interactions. In particular, NiI$_{2}$ is a magnetic semiconductor that has been long known for its exotic helimagnetism in the bulk. Recent experiments have shown that the helimagnetic state survives down to the monolayer limit with a layer-dependent magnetic transition temperature that suggests a relevant role of the interlayer coupling. Here, we explore the effects of hydrostatic pressure as a means to enhance this interlayer exchange and ultimately tune the electronic and magnetic response of NiI$_{2}$. We study first the evolution of the structural parameters as a function of external pressure using first-principles calculations combined with x-ray diffraction measurements. We then examine the evolution of the electronic structure and magnetic exchange interactions via first-principles calculations and Monte Carlo simulations. We find that the leading interlayer coupling is an antiferromagnetic second-nearest neighbor interaction that increases monotonically with pressure. The ratio between isotropic third- and first-nearest neighbor intralayer exchanges, which controls the magnetic frustration and determines the magnetic propagation vector $\mathbf{q}$ of the helimagnetic ground state, is also enhanced by pressure. As a consequence, our Monte Carlo simulations show a monotonic increase in the magnetic transition temperature, indicating that pressure is an effective means to tune the magnetic response of NiI$_{2}$.

Pinning at local defects is a significant road block for the successful implementation of technological paradigms which rely on the dynamic properties of non-trivial magnetic textures. In this report a comprehensive study of the influence of local pinning sites for non-homogeneous magnetic layers integrated as the free layer of a magnetic tunnel junction is presented, both experimentally and with corresponding micromagnetic simulations. The pinning sites are found to be extremely detrimental to the frequency controllability of the devices, a key requirement for their use as synapses in a frequency multiplexed artificial neural networks. In addition to describing the impact of the local pinning sites in the more conventional NiFe, a vortex-based magnetic tunnel junction with an amorphous free layer is presented which shows significantly improved frequency selectivity, marking a clear direction for the design of future low power devices.

The spin-diode effect is studied both experimentally and with our original semi-analytical method. The latter is based on an improved version of the Thiele equation approach (TEA) that we combine to micromagnetic simulation data to accurately model the non-linear dynamics of spin-torque vortex oscillator (STVO). This original method, called data-driven Thiele equation approach (DD-TEA), absorbs the difference between the analytical model and micromagnetic simulations to provide a both ultra-fast and quantitative model. The DD-TEA model predictions also agree very well with the experimental data. The reversal of the spin-diode effect with the chirality of the vortex, the impact of the input current and the origin of a variation at half of the STVO frequency are presented as well as the ability of the model to reproduce the experimental behavior. Finally, the spin-diode effect and its simulation using the DD-TEA model are discussed as a promising perspective in the framework of neuromorphic computing.

The binary ruthenate, RuO$_2$, has been the subject of intense interest due to its itinerant antiferromagnetism and strain-induced superconductivity. The strain mechanism and its effect on the microscopic electronic states leading to the normal and superconducting state, however, remain undisclosed. Here, we investigate highly-strained epitaxial (110) RuO$_2$ films using polarization-dependent oxygen K-edge X-ray absorption spectroscopy (XAS). Through the detection of pre-edge peaks, arising from O:$2p$ - Ru:$4d$ hybridization, we uncover the effects of epitaxial strain on the orbital/electronic structure near the Fermi level. Our data show robust strain-induced shifts of orbital levels and a reduction of hybridization strength. Furthermore, we reveal a pronounced in-plane anisotropy of the electronic structure along the $[110]/[1\bar{1}0]$ directions naturally stemming from the symmetry-breaking epitaxial strain of the substrate. The $B_{2g}$ symmetry component of the epitaxially-enforced strain breaks a sublattice degeneracy, resulting in an increase of the density of states at the Fermi level ($E_F$), possibly paving the way to superconductivity. These results underscore the importance of the effective reduction from tetragonal to orthorhombic lattice symmetry in (110) RuO$_2$ films and its relevance towards the superconducting and magnetic properties.

Artificial neural networks are a valuable tool for radio-frequency (RF) signal classification in many applications, but digitization of analog signals and the use of general purpose hardware non-optimized for training make the process slow and energetically costly. Recent theoretical work has proposed to use nano-devices called magnetic tunnel junctions, which exhibit intrinsic RF dynamics, to implement in hardware the Multiply and Accumulate (MAC) operation, a key building block of neural networks, directly using analogue RF signals. In this article, we experimentally demonstrate that a magnetic tunnel junction can perform multiplication of RF powers, with tunable positive and negative synaptic weights. Using two magnetic tunnel junctions connected in series we demonstrate the MAC operation and use it for classification of RF signals. These results open the path to embedded systems capable of analyzing RF signals with neural networks directly after the antenna, at low power cost and high speed.

Magnetic tunnel junctions are nanoscale spintronic devices with microwave generation and detection capabilities. Here we use the rectification effect called "spin-diode" in a magnetic tunnel junction to wirelessly detect the microwave emission of another junction in the auto-oscillatory regime. We show that the rectified spin-diode voltage measured at the receiving junction end can be reconstructed from the independently measured auto-oscillation and spin diode spectra in each junction. Finally we adapt the auto-oscillator model to the case of spin-torque oscillator and spin-torque diode and we show that accurately reproduces the experimentally observed features. These results will be useful to design circuits and chips based on spintronic nanodevices communicating through microwaves.

We revisit the classical problem of electromagnetic wave refraction from a lossless dielectric to a lossy conductor, where both media are considered to be non-magnetic, linear, isotropic and homogeneous. We derive the Fresnel coefficients of the system and the Poynting vectors at the interface, in order to compute the reflectance and transmittance of the system. We use a particular parametrisation of the referred Fresnel coefficients so as to make a connection with the ones obtained for refraction by an interface between two lossless media. This analysis allows the discussion of an actual application, namely the Fresnel polarisation of infra-red radiation by elemental bismuth, based on the concept of pseudo Brewster's angle.

We unveil the diamondization mechanism of few-layer graphene compressed in the presence of water, providing robust evidence for the pressure-induced formation of 2D diamond. High-pressure Raman spectroscopy provides evidence of a phase transition occurring in the range of 4-7 GPa for 5-layer graphene and graphite. The pressure-induced phase is partially transparent and indents the silicon substrate. Our combined theoretical and experimental results indicate a gradual top-bottom diamondization mechanism, consistent with the formation of diamondene, a 2D ferromagnetic semiconductor. High-pressure x-ray diffraction on graphene indicates the formation of hexagonal diamond, consistent with the bulk limit of eclipsed-conformed diamondene.

In this paper, the perpendicular magnetic anisotropy (PMA) is tailored by changing the thickness of the free layer with the objective of producing MTJ nano-pillars with smooth linear resistance dependence with both in-plane magnetic field and DC bias. We furthermore demonstrate how this linear bias dependence can be used to create a zero-threshold broadband voltage rectifier, a feature which is important for rectification in wireless charging and energy harvesting applications. By carefully balancing the amount of PMA acting in the free layer the measured RF to DC voltage conversion efficiency can be made as large as 11%.

With the ever increasing power dissipation in electrical devices, new thermal management solutions are in high demand to maintain an optimal operating temperature and efficient performance. In particular, recently developed magnetically-activated thermal switches (MATSs) provide an alternative to existing devices, using the magnetic and thermal properties of superparamagnetic nanofluids to dissipate heat in a controlled manner. However, the presence of moving parts is a major drawback in those systems that must still be addressed. Herein, we present a compact and automatized MATS composed by an encapsulated superparamagnetic nanofluid and an electromagnet allowing to activate the MATS without any moving part. We investigate the effect of different temperature gradients (40, 26 and 10 C) and powers applied to the coil (6.5, 15, 25 and 39 W) on the performance of this novel MATS. The results show that the highest (44.4$) and fastest (0.6 C/s) temperature variation occur for the highest studied temperature gradient. On the other hand, with increasing power, there is also an increase in the efficiency of the heat exchange process between the two surfaces. These results remove one of the main barriers preventing the actual application of magnetic thermal switches and opens new venues for the design of efficient thermal management devices.

The electron-phonon coupling in self-assembled InGaAs quantum dots is relatively weak at low light intensities, which means that the zero-phonon line in emission is strong compared to the phonon sideband. However, the coupling to acoustic phonons can be dynamically enhanced in the presence of an intense optical pulse tuned within the phonon sideband. Recent experiments have shown that this dynamic vibronic coupling can enable population inversion to be achieved when pumping with a blue-shifted laser and for rapid de-excitation of an inverted state with red detuning. In this paper we con?rm the incoherent nature of the phonon-assisted pumping process and explore the temperature dependence of the mechanism. We also show that a combination of blue- and red-shifted pulses can create and destroy an exciton within a timescale ~20 ps determined by the pulse duration and ultimately limited by the phonon thermalisation time.

We demonstrate ultrafast incoherent depopulation of a quantum dot from above to below the transparency point using LA-phonon-assisted emission stimulated by a redshifted laser pulse. The QD is turned from a weakly vibronic system into a strongly vibronic one by laser driving which enables the phonon-assisted relaxation between the excitonic components of two dressed states. The depopulation is achieved within a laser pulse-width-limited time of 20 ps and exhibits a broad tuning range of a few meV. Our experimental results are well reproduced by path-integral calculations.

A theoretical model supported by experimental results explains the dependence of the Raman scattering signal on the evolution of structural parameters along the amorphization trajectory of polycrystalline graphene systems. Four parameters rule the scattering efficiencies, two structural and two related to the scattering dynamics. With the crystallite sizes previously defined from X-ray diffraction and microscopy experiments, the three other parameters (the average grain boundaries width, the phonon coherence length, and the electron coherence length) are extracted from the Raman data with the geometrical model proposed here. The broadly used intensity ratio between the C-C stretching (G band) and the defect-induced (D band) modes can be used to measure crystallite sizes only for samples with sizes larger than the phonon coherence length, which is found equal to 32 nm. The Raman linewidth of the G band is ideal to characterize the crystallite sizes below the phonon coherence length, down to the average grain boundaries width, which is found to be 2.8 nm. "Ready-to-use" equations to determine the crystallite dimensions based on Raman spectroscopy data are given.

We demonstrate an on-demand hole spin qubit initialization scheme meeting four key requirements of quantum information processing: fast initialization (1/e ~ 100 ps), high fidelity (F > 99%), long qubit lifetime $(2T_{1}>T_{2}^{*}\simeq10\:\mathrm{ns})$, and compatibility with optical coherent control schemes. This is achieved by rapidly ionizing an exciton in an InGaAs quantum dot with very low fine-structure splitting at zero magnetic field. Furthermore, we show that the hole spin fidelity of an arbitrary quantum dot can be increased by optical Stark effect tuning of the fine-structure splitting close to zero.