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In this paper, we study the Navier-Stokes equation and the Burgers equation for the dynamical motion of a passive particle with harmonic and viscous forces, subject to an exponentially correlated Gaussian force. As deriving the Fokker-Planck equation for the joint probability density of a passive particle, we find obviously the important solution of the joint probability density by using double Fourier transforms in three-time domains, and the moments from derived moment equation are numerically calculated. As a result, the dynamical motion of a passive particle with respect to the probability density having two variables of displacement and velocity in the short-time domain has a super-diffusive form, whereas the distribution in the long-time domain is obtained to be Gaussian by analyzing only from the velocity probability density.

Twisted hexagonal boron nitride (thBN) exhibits emergent ferroelectricity due to the formation of moiré superlattices with alternating AB and BA domains. These domains possess electric dipoles, leading to a periodic electrostatic potential that can be imprinted onto other 2D materials placed in its proximity. Here we demonstrate the remote imprinting of moiré patterns from twisted hexagonal boron nitride (thBN) onto monolayer MoSe2 and investigate the resulting changes in the exciton properties. We confirm the imprinting of moiré patterns on monolayer MoSe2 via proximity using Kelvin probe force microscopy (KPFM) and hyperspectral photoluminescence (PL) mapping. By developing a technique to create large ferroelectric domain sizes ranging from 1 \mum to 8.7 \mum, we achieve unprecedented potential modulation of 387 +- 52 meV. We observe the formation of exciton polarons due to charge redistribution caused by the antiferroelectric moiré domains and investigate the optical property changes induced by the moiré pattern in monolayer MoSe2 by varying the moiré pattern size down to 110 nm. Our findings highlight the potential of twisted hBN as a platform for controlling the optical and electronic properties of 2D materials for optoelectronic and valleytronic applications.

In this paper, we solve the joint probability density for the passive and active particles with harmonic, viscous, and perturbative forces. After deriving the Fokker-Planck equation for a passive and a run-and-tumble particles, we approximately get and analyze the solution for the joint distribution density subject to an exponential correlated Gaussian force in three kinds of time limit domains. Mean squared displacement (velocity) for a particle with harmonic and viscous forces behaviors in the form of super-diffusion, consistent with a particle having viscous and perturbative forces. A passive particle with both harmonic, viscous forces and viscous, perturbative forces has the Gaussian form with mean squared velocity ~t. Particularly, In our case of a run-and-tumble particle, the mean squared displacement scales as super-diffusion, while the mean squared velocity has a normal diffusive form.In addition, the kurtosis, the correlation coefficient, and the moment from moment equation are numerically calculated.

We derive a Fokker-Planck equation for joint probability density for an active particle coupled two heat reservoirs with harmonic, viscous, random forces. The approximate solution for the joint distribution density of all-to-all and three others topologies is solved, which apply an exponential correlated Gaussian force in three-time regions of correlation time. Mean squared displacement, velocity behaviors in the form of super-diffusion, while the mean squared displacement, velocity has the Gaussian form, normal diffusion. Concomitantly, the Kurtosis, correlation coefficient, and moment from moment equation are approximately and numerically calculated. In this paper, we derive an altered Fokker-Planck equation for an active particle with the harmonic, viscous, and random forces, coupled to two heat reservoirs. We attain the solution for the joint distribution density of our topology, including the center topology, the ring topology, and the chain topology, subject to an exponential correlated Gaussian force. The mean squared displacement and the mean squared velocity behavior as the super-diffusions in the short-time domain and for the characteristic time=0, while those have the Gaussian forms in the long-time domain and for the characteristic time=0. We concomitantly calculate and analyze the non-equilibrium characteristics of the kurtosis, the correlation coefficient, and the moment from the derived moment equation.

We study the Fokker-Planck equation for an active particle with both the radial and tangential forces and the perturbative force. We find the solution of the joint probability density. In the limit of the long-time domain and for the characteristic time=0 domain, the mean squared radial velocity for an active particle leads to a super-diffusive distribution, while the mean squared tangential velocity with both the radial and tangential forces and the perturbative force behaviors as the Gaussian diffusion. Compared with the self-propelled particle, the mean squared tangential velocity is matched with the same value to the time ~t^2, while the mean squared radial velocity is the same as the time ~t.

We firstly study the Navier-Stokes equation for the motion of a passive particle with harmonic, viscous, perturbative forces, subject to an exponentially correlated Gaussian force. Secondly, from the Fokker-Planck equation in an incompressible conducting fluid of magnetic field, we approximately obtain the solution of the joint probability density by using double Fourier transforms in three-time domains. In addition, the kurtosis, the correlation coefficient, and the moment from moment equation are numerically calculated.

Local interlayer charge polarization of twisted bilayer hexagonal boron nitride (t2BN) is calculated and parametrized as a function of twist angle and perpendicular electric fields through tight-binding calculations on lattice relaxed geometries Lattice relaxations tend to increase the bandwidth of the nearly flat bands, where widths smaller than 1 meV are expected for angle less than 1.08 degree for parallel BN/BN alignment, and for angle less than 1.5 degree for the antiparallel BN/NB alignment. Local interlayer charge polarization maxima of 2.6 pC/m corresponding are expected at the AB and BA stacking sites of BN/BN aligned t2BN in the long moire period limit for angle less than 1 degree, and evolves non-monotonically with a maximum of 3.5 pC/m at angle equal to 1.6 degree before reaching 2 pC/m for angle equal to 6 degree. The electrostatic potential maxima due to the t2BN are overall enhanced by 20 percentage with respect to the rigid system assuming potential modulation depths of up to 300 mV near its surface. In BN/BN aligned bilayers the relative areas of the AB or BA local stacking regions can be expanded or reduced through a vertical electric field depending on its sign.

We study the electronic structure of alternating-twist tetralayer graphene, especially near its magic angle $\theta = 1.75^\circ$, for different AA, AB, and SP sliding geometries at their middle interface that divides two twisted bilayer graphenes. This sliding dependence is shown for the bandwidths, band gaps, and $K$-valley Chern numbers of the lowest-energy valence and conduction bands as a function of twist angle and interlayer potential difference. Our analysis reveals that the AA sliding is most favorable for narrow bands and gaps, and the AB sliding is most prone to developing finite valley Chern numbers. We further analyze the linear longitudinal optical absorptions as a function of photon energy and the absorption map in the moiré Brillouin zone for specific transition energies. A self-consistent Hartree calculation reveals that the AA system's electronic structure is the most sensitive to variations in carrier density.

Superlattices from twisted graphene mono- and bi-layer systems give rise to on-demand many-body states such as Mott insulators and unconventional superconductors. These phenomena are ascribed to a combination of flat bands and strong Coulomb interactions. However, a comprehensive understanding is lacking because the low-energy band structure strongly changes when the electron filling is varied. Here, we gain direct access to the filling-dependent low energy bands of twisted bilayer graphene (TBG) and twisted double bilayer graphene (TDBG) by applying micro-focused angle-resolved photoemission spectroscopy to in situ gated devices. Our findings for the two systems are in stark contrast: The doping dependent dispersion for TBG can be described in a simple model, combining a filling-dependent rigid band shift with a many-body related bandwidth change. In TDBG, on the other hand, we find a complex behaviour of the low-energy bands, combining non-monotonous bandwidth changes and tuneable gap openings. Our work establishes the extent of electric field tunability of the low energy electronic states in twisted graphene superlattices and can serve to underpin the theoretical understanding of the resulting phenomena.

Hexagonal boron nitride ($\it h$-BN) exhibits dominant $\pi$-bands near the Fermi level, similar to graphene. However, unlike graphene, where tight-binding (TB) models accurately reproduce band edges near the $K$ and $K^{\prime}$ points in the Brillouin zone, a wider bandgap in $\it h$-BN necessitates capturing the band edges at both the $K$ and $M$ points for precise bandgap calculations. We present effective TB models derived from $\it ab initio$ calculations using maximally localized Wannier functions (MLWFs) centered on boron and nitrogen sites. These models consider hopping terms of up to four distant neighbors and achieve excellent agreement with $\it ab initio$ results near the $K$ and $M$ points. Furthermore, we compare the band structures from our simplified models with those obtained from $\it ab initio$ calculations and the full tight-binding model to assess their accuracy. To account for the effects of strains, we introduce fitting parametrizations that relate the hopping parameters of the effective TB model to the lattice constant and interlayer distance. Additionally, we utilize the two-center approximation to calculate the interlayer hopping energies based on the relative distances between sublattices to generalize the interlayer hopping parameters across different stacking configurations. We demonstrate the effectiveness of this method by comparing the electronic structure of zero-twist and twisted $\it h$-BN systems with $\it ab initio$ calculations.

Twisted bilayer graphene (tBLG) provides a fascinating platform for engineering flat bands and inducing correlated phenomena. By designing the stacking architecture of graphene layers, twisted multilayer graphene can exhibit different symmetries with rich tunability. For example, in twisted monolayer-bilayer graphene (tMBG) which breaks the C2z symmetry, transport measurements reveal an asymmetric phase diagram under an out-of-plane electric field, exhibiting correlated insulating state and ferromagnetic state respectively when reversing the field direction. Revealing how the electronic structure evolves with electric field is critical for providing a better understanding of such asymmetric field-tunable properties. Here we report the experimental observation of field-tunable dichotomic electronic structure of tMBG by nanospot angle-resolved photoemission spectroscopy (NanoARPES) with operando gating. Interestingly, selective enhancement of the relative spectral weight contributions from monolayer and bilayer graphene is observed when switching the polarity of the bias voltage. Combining experimental results with theoretical calculations, the origin of such field-tunable electronic structure, resembling either tBLG or twisted double-bilayer graphene (tDBG), is attributed to the selectively enhanced contribution from different stacking graphene layers with a strong electron-hole asymmetry. Our work provides electronic structure insights for understanding the rich field-tunable physics of tMBG.

We present a turbulence-sustaining mechanism in a spinor Bose-Einstein condensate, which is based on the chaotic nature of internal spin dynamics. Magnetic driving induces a complete chaotic evolution of the local spin state, thereby continuously randomizing the spin texture of the condensate to maintain the turbulent state. We experimentally demonstrate the onset of turbulence in the driven condensate as the driving frequency changes and show that it is consistent with the regular-to-chaotic transition of the local spin dynamics. This chaos-assisted turbulence establishes the spin-driven spinor condensate as an intriguing platform for exploring quantum chaos and related superfluid turbulence phenomena.

Rhombohedral multilayer graphene (RnG) featuring partially flat bands has emerged as an important platform to probe strong Coulomb correlation effects. Theoretical consideration of local electron-electron interactions are of particular importance for electronic eigenstates with a tendency to spatially localize. We present a method to incorporate mean-field electron-electron interaction corrections in the tight-binding hopping parameters of the band Hamiltonian within the extended Hubbard model that incorporates ab initio estimates of on-site ($U$) and inter-site ($V$) Hubbard interactions for the $\pi$ bands of RnG. Our Coulomb-interaction renormalized band structures feature electron-hole asymmetry, band flatness, band gap, and anti-ferromagnetic ground states in excellent agreement with available experiments for $n \geq 4$. We reinterpret the putative gaps proposed in $n=3$ systems in terms of shifting electron and hole density of states peaks depending on the range of the Coulomb interaction models.

In condensed matter physics, the Kagome lattice and its inherent flat bands have attracted considerable attention for their potential to host a variety of exotic physical phenomena. Despite extensive efforts to fabricate thin films of Kagome materials aimed at modulating the flat bands through electrostatic gating or strain manipulation, progress has been limited. Here, we report the observation of a novel $d$-orbital hybridized Kagome-derived flat band in Ag/Si(111) $\sqrt{3}\times\sqrt{3}$ as revealed by angle-resolved photoemission spectroscopy. Our findings indicate that silver atoms on a silicon substrate form a Kagome-like structure, where a delicate balance in the hopping parameters of the in-plane $d$-orbitals leads to destructive interference, resulting in a flat band. These results not only introduce a new platform for Kagome physics but also illuminate the potential for integrating metal-semiconductor interfaces into Kagome-related research, thereby opening a new avenue for exploring ideal two-dimensional Kagome systems.

Josephson junctions are typically characterized by a single phase difference across two superconductors. This conventional two-terminal Josephson junction can be generalized to a multi-terminal device where the Josephson energy contains terms with contributions from multiple independent phase variables. Such multi-terminal Josephson junctions (MTJJs) are being considered as platforms for engineering effective Hamiltonians with non-trivial topologies, such as Weyl crossings and higher-order Chern numbers. This approach offers unique possibilities that are complementary to phenomena attainable in bulk crystals, including topological states in more than three dimensions and real-time gate-tunability of the Hamiltonians. However, these prospects rely on the ability to create MTJJs with non-classical multi-terminal couplings in which only a handful of quantum modes are populated. Here, we demonstrate these requirements by using a three-terminal Josephson junction fabricated on selective-area-grown (SAG) PbTe nanowires. We observe signatures of a $\pi$-shifted Josephson effect, consistent with inter-terminal couplings mediated by four-particle quantum states called Cooper quartets. We further observe supercurrent co-existent with a non-monotonic evolution of the conductance with gate voltage, indicating transport mediated by a few quantum modes in both two- and three-terminal devices. These results establish a platform for investigations of topological Hamiltonians based on Andreev bound states.

We report intriguing and hitherto overlooked low-field room temperature extremely large magnetoresistance (XMR) patterns in graphene/hexagonal boron nitride (h-BN) superlattices that emerge due to the existence of open orbits within each miniband. This finding is set against the backdrop of the experimental discovery of the Hofstadter butterfly in moir superlattices, which has sparked considerable interest in the fractal quantum Hall regime. To cope with the challenge of deciphering the low magnetic field dynamics of moir minibands, we utilize a novel semi-classical calculation method, grounded in zero-field Fermi contours, to predict the nontrivial behavior of the Landau-level spectrum. This is compared with fully quantum simulations, enabling an in-depth and contrasted analysis of transport measurements in high-quality graphene-hBN superlattices. Our results not only highlight the primary observation of the open-orbit induced XMR in this system but also shed new light on other intricate phenomena. These include the nuances of single miniband dynamics, evident through Lifshitz transitions, and the complex interplay of semiclassical and quantum effects between these minibands. Specifically, we document transport anomalies linked to trigonal warping, a semiclassical deviation from the expected linear characteristics of Landau levels, and magnetic breakdown phenomena indicative of quantum tunneling, all effects jointly contributing to the intricacies of a rich electronic landscape uncovered at low magnetic fields.

Solid-state electrolytes with argyrodite structures, such as $\mathrm{Li_6PS_5Cl}$, have attracted considerable attention due to their superior safety compared to liquid electrolytes and higher ionic conductivity than other solid electrolytes. Although experimental efforts have been made to enhance conductivity by controlling the degree of disorder, the underlying diffusion mechanism is not yet fully understood. Moreover, existing theoretical analyses based on ab initio MD simulations have limitations in addressing various types of disorder at room temperature. In this study, we directly investigate Li-ion diffusion in $\mathrm{Li_6PS_5Cl}$ at 300 K using large-scale, long-term MD simulations empowered by machine learning potentials (MLPs). To ensure the convergence of conductivity values within an error range of 10%, we employ a 25 ns simulation using a $5\times5\times5$ supercell containing 6500 atoms. The computed Li-ion conductivity, activation energies, and equilibrium site occupancies align well with experimental observations. Notably, Li-ion conductivity peaks when Cl ions occupy 25% of the 4c sites, rather than at 50% where the disorder is maximized. This phenomenon is explained by the interplay between inter-cage and intra-cage jumps. By elucidating the key factors affecting Li-ion diffusion in $\mathrm{Li_6PS_5Cl}$, this work paves the way for optimizing ionic conductivity in the argyrodite family.

In Bernal-stacked bilayer graphene (BBG), the Landau levels give rise to an intimate connection between valley and layer degrees of freedom. Adding a moiré superlattice potential enriches the BBG physics with the formation of topological minibands - potentially leading to tunable exotic quantum transport. Here, we present magnetotransport measurements of a high-quality bilayer graphene-hexagonal boron nitride (hBN) heterostructure. The zero-degree alignment generates a strong moiré superlattice potential for the electrons in BBG and the resulting Landau fan diagram of longitudinal and Hall resistance displays a Hofstadter butterfly pattern with a high level of detail. We demonstrate that the intricate relationship between valley and layer degrees of freedom controls the topology of moiré-induced bands, significantly influencing the energetics of interacting quantum phases in the BBG superlattice. We further observe signatures of field-induced correlated insulators, helical edge states and clear quantizations of interaction-driven topological quantum phases, such as symmetry broken Chern insulators.

This study introduces a novel approach to composite design by employing aperiodic monotiles, shapes that cover surfaces without translational symmetry. Using a combined computational and experimental approach, we study the fracture behavior of composites crafted with these monotiles, and compared their performance against conventional honeycomb patterns. Remarkably, our aperiodic monotile-based composites exhibited superior stiffness, strength, and toughness in comparison to honeycomb designs. This study suggests that leveraging the inherent disorder of aperiodic structures can usher in a new generation of robust and resilient materials.

Altermagnetism is a newly identified fundamental class of magnetism with vanishing net magnetization and time-reversal symmetry broken electronic structure. Probing the unusual electronic structure with nonrelativistic spin splitting would be a direct experimental verification of altermagnetic phase. By combining high-quality film growth and $in~situ$ angle-resolved photoemission spectroscopy, we report the electronic structure of an altermagnetic candidate, $\alpha$-MnTe. Temperature dependent study reveals the lifting of Kramers\textquoteright degeneracy accompanied by a magnetic phase transition at $T_N=267\text{ K}$ with spin splitting of up to $370\text{ meV}$, providing direct spectroscopic evidence for altermagnetism in MnTe.

We numerically investigate the stationary turbulent states of spin-1 Bose-Einstein condensates under continuous spin driving. We analyze the entanglement entropy and magnetization correlation function to demonstrate the isotropic nature of the intricate spin texture that is generated in the nonequilibrium steady state. We observe a $-7/3$ power-law behavior in the spin-dependent interaction energy spectrum. To gain further insight into the statistical properties of the spin texture, we introduce a spin state ensemble obtained through position projection, revealing its close resemblance to the Haar random ensemble for spin-1 systems. We also present the probability distribution of the spin vector magnitude in the turbulent condensate, which can be tested in experiments. Our numerical study highlights the characteristics of stationary turbulence in the spinor BEC system and confirms previous experimental findings by Hong et al. [Phys. Rev. A 108, 013318 (2023)].

We study the relation between the quantum geometry of wave functions and the Landau level (LL) spectrum of two-band Hamiltonians with a quadratic band crossing point (QBCP) in two-dimensions. By investigating the influence of interband coupling parameters on the wave function geometry of general QBCPs, we demonstrate that the interband coupling parameters can be entirely determined by the projected elliptic image of the wave functions on the Bloch sphere, which can be characterized by three parameters, i.e., the major $d_1$ and minor $d_2$ diameters of the ellipse, and one angular parameter $\phi$ describing the orientation of the ellipse. These parameters govern the geometric properties of the system such as the Berry phase and modified LL spectra. Explicitly, by comparing the LL spectra of two quadratic band models with and without interband couplings, we show that the product of $d_1$ and $d_2$ determines the constant shift in LL energy while their ratio governs the initial LL energies near a QBCP. Also, by examining the influence of the rotation and time-reversal symmetries on the wave function geometry, we construct a minimal continuum model which exhibits various wave function geometries. We calculate the LL spectra of this model and discuss how interband couplings give LL structure for dispersive bands as well as nearly flat bands.

Interactions among charge carriers in graphene can lead to the spontaneous breaking of multiple degeneracies. When increasing the number of graphene layers following rhombohedral stacking, the dominant role of Coulomb interactions becomes pronounced due to the significant reduction in kinetic energy. In this study, we employ phonon-polariton assisted near-field infrared imaging to determine the stacking orders of tetralayer graphene devices. Through quantum transport measurements, we observe a range of spontaneous broken-symmetry states and their transitions, which can be finely tuned by carrier density n and electric displacement field D. Specifically, we observe a layer antiferromagnetic insulator at n = D = 0 with a gap of approximately 15 meV. Increasing D allows for a continuous phase transition from a layer antiferromagnetic insulator to a layer polarized insulator. By simultaneously tuning n and D, we observe isospin polarized metals, including spin-valley-polarized and spin-polarized metals. These transitions are associated with changes in Fermi surface topology and are consistent with the Stoner criteria. Our findings highlight the efficient fabrication of specially stacked multilayer graphene devices and demonstrate that crystalline multilayer graphene is an ideal platform for investigating a wide range of broken symmetries driven by Coulomb interactions.

Superconductor/semiconductor hybrid devices have attracted increasing interest in the past years. Superconducting electronics aims to complement semiconductor technology, while hybrid architectures are at the forefront of new ideas such as topological superconductivity and protected qubits. In this work, we engineer the induced superconductivity in two-dimensional germanium hole gas by varying the distance between the quantum well and the aluminum. We demonstrate a hard superconducting gap and realize an electrically and flux tunable superconducting diode using a superconducting quantum interference device (SQUID). This allows to tune the current phase relation (CPR), to a regime where single Cooper pair tunneling is suppressed, creating a $\sin \left( 2 \varphi \right)$ CPR. Shapiro experiments complement this interpretation and the microwave drive allows to create a diode with 100% efficiency. The reported results open up the path towards integration of spin qubit devices, microwave resonators and (protected) superconducting qubits on a silicon technology compatible platform.

Quantum devices based on InSb nanowires (NWs) are a prime candidate system for realizing and exploring topologically-protected quantum states and for electrically-controlled spin-based qubits. The influence of disorder on achieving reliable topological regimes has been studied theoretically, highlighting the importance of optimizing both growth and nanofabrication. In this work we investigate both aspects. We developed InSb nanowires with ultra-thin diameters, as well as a new gating approach, involving few-layer graphene (FLG) and Atomic Layer Deposition (ALD)-grown AlOx. Low-temperature electronic transport measurements of these devices reveal conductance plateaus and Fabry-Pérot interference, evidencing phase-coherent transport in the regime of few quantum modes. The approaches developed in this work could help mitigate the role of material and fabrication-induced disorder in semiconductor-based quantum devices.

We explore the direct to indirect band gap transitions in MX$_2$ (M= Mo/W, X= S/Se) transition metal dichalcogenides heterobilayers for different system compositions, strains, and twist angles based on first principles density functional theory calculations within the G$_0$W$_0$ approximation. The obtained band gaps that typically range between 1.4$-$2.0 eV are direct/indirect for different/same chalcogen atom systems and can often be induced through expansive/compressive biaxial strains of a few percent. A direct to indirect gap transition is verified for heterobilayers upon application of a finite 16$^{\circ}$ twist that weakens interlayer coupling. The large inter-layer exciton binding energies of the order of $\sim$~250~meV estimated by solving the Bethe-Salpeter equation suggest these systems are amenable to be studied through infrared and Raman spectroscopy.

We show that rhombohedral four-layer graphene (4LG) nearly aligned with a hexagonal boron nitride (hBN) substrate often develops nearly flat isolated low energy bands with non-zero valley Chern numbers. The bandwidths of the isolated flatbands are controllable through an electric field and twist angle, becoming as narrow as $\sim10~$meV for interlayer potential differences between top and bottom layers of $|\Delta|\approx 10\sim15~$meV and $\theta \sim 0.5^{\circ}$ at the graphene and boron nitride interface. The local density of states (LDOS) analysis shows that the nearly flat band states are associated to the non-dimer low energy sublattice sites at the top or bottom graphene layers and their degree of localization in the moire superlattice is strongly gate tunable, exhibiting at times large delocalization despite of the narrow bandwidth. We verified that the first valence bands' valley Chern numbers are $C^{\nu=\pm1}_{V1} = \pm n$, proportional to layer number for $n$LG/BN systems up to $n = 8$ rhombohedral multilayers.

We numerically investigate the dynamics of vortex generation in a two-dimensional, twocomponent Bose-Einstein condensate subjected to an oscillatory magnetic obstacle. The obstacle creates both repulsive and attractive Gaussian potentials for the two symmetric spin-$\uparrow$ and $\downarrow$ components, respectively. We demonstrate that, as the oscillating frequency f increases, two distinct critical dynamics arise in the generation of half-quantum vortices (HQVs) with different spin circulations. Spin-$\uparrow$ vortices are nucleated directly from the moving obstacle at low f, while spin-$\downarrow$ vortices are created at high f by breaking a spin wave pulse in front of the obstacle. We find that vortex generation is suppressed for sufficiently weak obstacles, in agreement with recent experimental results by Kim et al. [Phys. Rev. Lett. 127, 095302 (2021)]. This suppression is caused by the finite sweeping distance of the oscillating obstacle and the reduction in friction in a supersonic regime. Finally, we show that the characteristic length scale of the HQV generation dynamics is determined by the spin healing length of the system.

We investigate the total energies of spontaneous spin-valley polarized states in bi-, tri-, and tetralayer rhombohedral graphene where the long-range Coulomb correlations are accounted for within the random phase approximation. Our analysis of the phase diagrams for varying carrier doping and perpendicular electric fields shows that the exchange interaction between chiral electrons is the main driver of spin-valley polarization, while the presence of Coulomb correlations brings the flavor polarization phase boundaries to carrier densities close to the complete filling of the Mexican hat shape top at the Dirac points. We find that the tendency towards spontaneous spin-valley polarization is enhanced with the chirality of the bands and therefore with increasing number of layers.

Group-IV monochalcogenides have recently shown great potential for their thermoelectric, ferroelectric, and other intriguing properties. The electrical properties of group-IV monochalcogenides exhibit a strong dependence on the chalcogen type. For example, GeTe exhibits high doping concentration, whereas S/Se-based chalcogenides are semiconductors with sizable bandgaps. Here, we investigate the electrical and thermoelectric properties of gamma-GeSe, a recently identified polymorph of GeSe. gamma-GeSe exhibits high electrical conductivity (~106 S/m) and a relatively low Seebeck coefficient (9.4 uV/K at room temperature) owing to its high p-doping level (5x1021 cm-3), which is in stark contrast to other known GeSe polymorphs. Elemental analysis and first-principles calculations confirm that the abundant formation of Ge vacancies leads to the high p-doping concentration. The magnetoresistance measurements also reveal weak-antilocalization because of spin-orbit coupling in the crystal. Our results demonstrate that gamma-GeSe is a unique polymorph in which the modified local bonding configuration leads to substantially different physical properties.

Our research shows that commercially available graphene on quartz modified with rhenium oxide meets the requirements for its use as a conductive and transparent anode in optoelectronic devices. The cluster growth of rhenium oxide enables an increase in the work function of graphene by 1.3 eV up to 5.2 eV, which guarantees an appropriate adjustment to the energy levels of the organic semiconductors used in OLED devices.

We report the observation of stationary turbulence in antiferromagnetic spin-1 Bose-Einstein condensates driven by a radio-frequency magnetic field. The magnetic driving injects energy into the system by spin rotation and the energy is dissipated via dynamic instability, resulting in the emergence of an irregular spin texture in the condensate. Under continuous driving, the spinor condensate evolves into a nonequilibrium steady state with characteristic spin turbulence, while the low energy scale of spin excitations ensures that the sample's lifetime is minimally affected. When the driving strength is on par with the system's spin interaction energy and the quadratic Zeeman energy, remarkably, the stationary turbulent state exhibits spin-isotropic features in spin composition and spatial spin texture. We numerically show that ambient field fluctuations play a crucial role in sustaining the turbulent state within the system. These results open up new avenues for exploring quantum turbulence in spinor superfluid systems.

We study the commensuration torques and layer sliding energetics of alternating twist trilayer graphene (t3G) and twisted bilayer graphene on hexagonal boron nitride (t2G/BN) that have two superposed moire interfaces. Lattice relaxations for typical graphene twist angles of $\sim 1^{\circ}$ in t3G or t2G/BN are found to break the out-of-plane layer mirror symmetry, give rise to layer rotation energy local minima dips of the order of $\sim 10^{-1}$ meV/atom at double moire alignment angles, and have sliding energy landscape minima between top-bottom layers of comparable magnitude. Moire superlubricity is restored for twist angles as small as $\sim 0.03^\circ$ away from alignment resulting in suppression of sliding energies by several orders of magnitude of typically $\sim 10^{-4}$ meV/atom, hence indicating the precedence of rotation over sliding in the double moire commensuration process.

We theoretically study the energy and optical absorption spectra of alternating twist multilayer graphene (ATMG) under a perpendicular electric field. We obtain analytically the low-energy effective Hamiltonian of ATMG up to pentalayer in the presence of the interlayer bias by means of first-order degenerate-state perturbation theory, and present general rules for constructing the effective Hamiltonian for an arbitrary number of layers. Our analytical results agree to an excellent degree of accuracy with the numerical calculations for twist angles $\theta \gtrsim 2.2^{\circ}$ that are larger than the typical range of magic angles. We also calculate the optical conductivity of ATMG and determine its characteristic optical spectrum, which is tunable by the interlayer bias. When the interlayer potential difference is applied between consecutive layers of ATMG, the Dirac cones at the two moiré Brillouin zone corners $\bar{K}$ and $\bar{K}'$ acquire different Fermi velocities, generally smaller than that of monolayer graphene, and the cones split proportionally in energy resulting in a step-like feature in the optical conductivity.

Accurate prediction of thermodynamic properties requires an extremely accurate representation of the free energy surface. Requirements are twofold -- first, the inclusion of the relevant finite-temperature mechanisms, and second, a dense volume-temperature grid on which the calculations are performed. A systematic workflow for such calculations requires computational efficiency and reliability, and has not been available within an ab initio framework so far. Here, we elucidate such a framework involving direct upsampling, thermodynamic integration and machine-learning potentials, allowing us to incorporate, in particular, the full effect of anharmonic vibrations. The improved methodology has a five-times speed-up compared to state-of-the-art methods. We calculate equilibrium thermodynamic properties up to the melting point for bcc Nb, magnetic fcc Ni, fcc Al and hcp Mg, and find remarkable agreement with experimental data. Strong impact of anharmonicity is observed specifically for Nb. The introduced procedure paves the way for the development of ab initio thermodynamic databases.

New phases of matter can be stabilized by a combination of diverging electronic density of states, strong interactions, and spin-orbit coupling. Recent experiments in magic-angle twisted bilayer graphene (TBG) have uncovered a wealth of novel phases as a result of interaction-driven spin-valley flavour polarization. In this work, we explore correlated phases appearing due to the combined effect of spin-orbit coupling-enhanced valley polarization and large density of states below half filling ($\nu \lesssim 2$) of the moiré band in a TBG coupled to tungsten diselenide. We observe anomalous Hall effect, accompanied by a series of Lifshitz transitions, that are highly tunable with carrier density and magnetic field. Strikingly, the magnetization shows an abrupt sign change in the vicinity of half-filling, confirming its orbital nature. The coercive fields reported are about an order of magnitude higher than previous studies in graphene-based moiré systems, presumably aided by a Stoner instability favoured by the van Hove singularities in the malleable bands. While the Hall resistance is not quantized at zero magnetic fields, indicative of a ground state with partial valley polarization, perfect quantization and complete valley polarization are observed at finite fields. Our findings illustrate that singularities in the flat bands in the presence of spin-orbit coupling can stabilize ordered phases even at non-integer moiré band fillings.

When a superfluid flows past an obstacle, quantized vortices can be created in the wake above a certain critical velocity. In the experiment by Kwon et al. [Phys. Rev. A 91, 053615 (2015)], the critical velocity $v_c$ was measured for atomic Bose-Einstein condensates (BECs) using a moving repulsive Gaussian potential and $v_c$ was minimized when the potential height $V_0$ of the obstacle was close to the condensate chemical potential $\mu$. Here we numerically investigate the evolution of the critical vortex shedding in a two-dimensional BEC with increasing $V_0$ and show that the minimum $v_c$ at the critical strength $V_{0c}\approx \mu$ results from the local density reduction and vortex pinning effect of the repulsive obstacle. The spatial distribution of the superflow around the moving obstacle just below $v_c$ is examined. The particle density at the tip of the obstacle decreases as $V_0$ increases to $V_{c0}$ and at the critical strength, a vortex dipole is suddenly formed and dragged by the moving obstacle, indicating the onset of vortex pinning. The minimum $v_c$ exhibits power-law scaling with the obstacle size $\sigma$ as $v_c\sim \sigma^{-\gamma}$ with $\gamma\approx 1/2$.

Heteroepitaxy enables the engineering of novel properties, which do not exist in a single material. Two principle growth modes are identified for material combinations with large lattice mismatch, Volmer-Weber and Stranski-Krastanov. Both lead to the formation of three-dimensional islands, hampering the growth of flat defect-free thin films. This limits the number of viable material combinations. Here, we report a distinct growth mode found in molecular beam epitaxy of PbTe on InP initiated by pre-growth surface treatments. Early nucleation forms islands analogous to the Volmer-Weber growth mode, but film closure exhibits a flat surface with atomic terracing. Remarkably, despite multiple distinct crystal orientations found in the initial islands, the final film is single-crystalline. This is possible due to a reorientation process occurring during island coalescence, facilitating high quality heteroepitaxy despite the large lattice mismatch, difference in crystal structures and diverging thermal expansion coefficients of PbTe and InP. This growth mode offers a new strategy for the heteroepitaxy of dissimilar materials and expands the realm of possible material combinations.

Step edges of topological crystalline insulators can be viewed as predecessors of higher-order topology, as they embody one-dimensional edge channels embedded in an effective three-dimensional electronic vacuum emanating from the topological crystalline insulator. Using scanning tunneling microscopy and spectroscopy we investigate the behaviour of such edge channels in Pb$_{1-x}$Sn$_{x}$Se under doping. Once the energy position of the step edge is brought close to the Fermi level, we observe the opening of a correlation gap. The experimental results are rationalized in terms of interaction effects which are enhanced since the electronic density is collapsed to a one-dimensional channel. This constitutes a unique system to study how topology and many-body electronic effects intertwine, which we model theoretically through a Hartree-Fock analysis.

We calculate the electronic structure of AA'AA'...-stacked alternating twist N-layer (tNG) graphene for N = 3, 4, 5, 6, 8, 10, 20 layers and bulk alternating twist (AT) graphite systems where the lattice relaxations are modeled by means of molecular dynamics simulations. We show that the symmetric AA'AA'... stacking is energetically preferred among all interlayer sliding geometries for progressively added layers up to N=6. Lattice relaxations enhance electron-hole asymmetry, and reduce the magic angles with respect to calculations with fixed tunneling strengths that we quantify from few layers to bulk AT-graphite. Without a perpendicular electric field, the largest magic angle flat-band states locate around the middle following the largest eigenvalue eigenstate in a 1D-chain model of layers, while the density redistributes to outer layers for smaller magic twist angles corresponding to higher order effective bilayers in the 1D chain. A perpendicular electric field decouples the electronic structure into $N$ Dirac bands with renormalized Fermi velocities with distinct even-odd band splitting behaviors, showing a gap for N=4 while for odd layers a Dirac cone remains between the flat band gaps. The magic angle error tolerance estimated from density of states maxima expand progressively from $0.05^{\circ}$ in t2G to up to $0.2^{\circ}$ in AT-graphite, hence allowing a greater flexibility in multilayers. Decoupling of tNG into t2G with different interlayer tunneling proportional to the eigenvalues of a 1D layers chain allows to map tNG-multilayers bands onto those of periodic bulk AT-graphite's at different $k_z$ values. We also obtain the Landau level density of states in the quantum Hall regime for magnetic fields of up to 50~T and confirm the presence of nearly flat bands around which we can develop suppressed density of states gap regions by applying an electric field in N > 3 systems.

Scanning transmission electron microscopy (STEM) is an indispensable tool for atomic-resolution structural analysis for a wide range of materials. The conventional analysis of STEM images is an extensive hands-on process, which limits efficient handling of high-throughput data. Here we apply a fully convolutional network (FCN) for identification of important structural features of two-dimensional crystals. ResUNet, a type of FCN, is utilized in identifying sulfur vacancies and polymorph types of ${MoS_2}$ from atomic resolution STEM images. Efficient models are achieved based on training with simulated images in the presence of different levels of noise, aberrations, and carbon contamination. The accuracy of the FCN models toward extensive experimental STEM images is comparable to that of careful hands-on analysis. Our work provides a guideline on best practices to train a deep learning model for STEM image analysis and demonstrates FCN's application for efficient processing of a large volume of STEM data.

We report the magnetic phase transitions of a spin-5/2, 2-dimensional triangular lattice antiferromagnet (AFM) Na$_2$BaMn(PO$_4$)$_2$. From specific heat measurements, we observe two magnetic transitions at temperatures 1.15 K and 1.30 K at zero magnetic field. Detailed AC magnetic susceptibility measurements reveal multiple phases including the $\uparrow$$\uparrow$$\downarrow$ (up-up-down)-phase between 1.9 T and 2.9 T at 47 mK when magnetic field is applied along the $c$ axis, implying that Na$_2$BaMn(PO$_4$)$_2$ is a classical 2$d$ TL Heisenberg AFM with easy-axis anisotropy. However, it deviates from an ideal model as evidenced by a hump region with hysteresis between the $\uparrow$$\uparrow$$\downarrow$ and $V$-phases and weak phase transitions. Our work provides another experimental example to study frustrated magnetism in 2$d$ TL AFM which also serves as a reference to understand the possible quantum spin liquid behavior and anomalous phase diagrams observed in sibling systems Na$_2$Ba$M$(PO$_4$)$_2$ ($M$ = Co, Ni).

PbTe is a semiconductor with promising properties for topological quantum computing applications. Here we characterize quantum dots in PbTe nanowires selectively grown on InP. Charge stability diagrams at zero magnetic field reveal large even-odd spacing between Coulomb blockade peaks, charging energies below 140$~\mathrm{\mu eV}$ and Kondo peaks in odd Coulomb diamonds. We attribute the large even-odd spacing to the large dielectric constant and small effective electron mass of PbTe. By studying the Zeeman-induced level and Kondo splitting in finite magnetic fields, we extract the electron $g$-factor as a function of magnetic field direction. We find the $g$-factor tensor to be highly anisotropic, with principal $g$-factors ranging from 0.9 to 22.4, and to depend on the electronic configuration of the devices. These results indicate strong Rashba spin-orbit interaction in our PbTe quantum dots.

We study topological phase transitions in tetragonal NaZnSb$_{1-x}$Bi$_x$, driven by the chemical composition $x$. Notably, we examine mirror Chern numbers that change without symmetry indicators. First-principles calculations are performed to show that NaZnSb$_{1-x}$Bi$_x$ experiences consecutive topological phase transitions, diagnosed by the strong $\mathbb Z_{2}$ topological index $\nu_{0}$ and two mirror Chern numbers $\mu_{x}$ and $\mu_{xy}$. As the chemical composition $x$ increases, the topological invariants ($\mu_{x}\mu_{xy}\nu_{0}$) change from $(000)$, $(020)$, $(220)$, to $(111)$ at $x$ = 0.15, 0.20, and 0.53, respectively. A simplified low-energy effective model is developed to examine the mirror Chern number changes, highlighting the central role of spectator Dirac fermions in avoiding symmetry indicators. Our findings suggest that NaZnSb$_{1-x}$Bi$_{x}$ can be an exciting testbed for the exploration of the interplay between the topology and symmetry.

We investigate the electronic structure of alternating-twist triple Bernal-stacked bilayer graphene (t3BG) as a function of interlayer coupling $\omega$, twist angle $\theta$, interlayer potential difference $\Delta$, and top-bottom bilayers sliding vector $\boldsymbol{\tau}$ for three possible configurations AB/AB/AB, AB/BA/AB, and AB/AB/BA. The parabolic low-energy band dispersions in a Bernal-stacked bilayer and gap-opening through a finite interlayer potential difference $\Delta$ allows the flattening of bands in t3BG down to $\sim 20$~meV for twist angles $\theta \lesssim 2^{\circ}$ regardless of the stacking types. The easier isolation of the flat bands and associated reduction of Coulomb screening thanks to the intrinsic gaps of bilayer graphene for finite $\Delta$ facilitate the formation of correlation-driven gaps when it is compared to the metallic phases of twisted trilayer graphene under electric fields. We obtain the stacking dependent Coulomb energy versus bandwidth $U/W \gtrsim 1$ ratios in the $\theta$ and $\Delta$ parameter space. We also present the expected $K$-valley Chern numbers for the lowest-energy nearly flat bands.

TMDs have recently been spotlighted due to their original features. Firstly, they have layered structures with Van der Waals interactions. Secondly, they have different phases, affecting a degree of anisotropy. Finally, they have excellent carrier mobilities. In this review, based on these characteristics, this journal shows how TMDs can be applied in a wide variety of industries. The main applications that will be treated is biomedical and electronic applications.

A Kagome lattice, formed by triangles of two different directions, is known to have many emergent quantum phenomena. Under the breathing anisotropy of bond strengths, this lattice can become a higher-order topological insulator (HOTI), which hosts topologically protected corner states. Experimental realizations of HOTI on breathing Kagome lattices have been reported for various artificial systems, but not for simple natural materials with an electronic breathing Kagome lattice. Here we prove that a breathing Kagome lattice and HOTI are hidden inside the electronic structure of hexagonal transition metal dichalcogenides (h-TMD). Due to the trigonal prismatic symmetry, $sp^2$-like hybrid d-orbitals create an electronic Kagome lattice with anisotropic inter-site and on-site hopping interactions. We demonstrate that HOTI h-TMD triangular nanoflakes host topologically protected corner states, which could be quantum-mechanically entangled with triple degeneracy. Because h-TMDS are easily synthesizable and stable at ambient conditions, our findings open new avenue for quantum physics based on simple condensed matter systems.

Indium antimonide (InSb) nanowires are used as building blocks for quantum devices because of their unique properties, i.e., strong spin-orbit interaction and large Landé g-factor. Integrating InSb nanowires with other materials could potentially unfold novel devices with distinctive functionality. A prominent example is the combination of InSb nanowires with superconductors for the emerging topological particles research. Here, we combine the II-VI cadmium telluride (CdTe) with the III-V InSb in the form of core-shell (InSb-CdTe) nanowires and explore potential applications based on the electronic structure of the InSb-CdTe interface and the epitaxy of CdTe on the InSb nanowires. We determine the electronic structure of the InSb-CdTe interface using density functional theory and extract a type-I band alignment with a small conduction band offset ($\leq$ 0.3 eV). These results indicate the potential application of these shells for surface passivation or as tunnel barriers in combination with superconductors. In terms of the structural quality of these shells, we demonstrate that the lattice-matched CdTe can be grown epitaxially on the InSb nanowires without interfacial strain or defects. These epitaxial shells do not introduce disorder to the InSb nanowires as indicated by the comparable field-effect mobility we measure for both uncapped and CdTe-capped nanowires.

The dominance of Coulomb interactions over kinetic energy of electrons in narrow, non-trivial moiré bands of magic-angle twisted bilayer graphene (TBG) gives rise to a variety of correlated phases such as correlated insulators, superconductivity, orbital ferromagnetism, Chern insulators and nematicity. Most of these phases occur at or near an integer number of carriers per moiré unit cell. Experimental demonstration of ordered states at fractional moiré band-fillings at zero applied magnetic field $B$, is a challenging pursuit. In this letter, we report the observation of states near half-integer band-fillings of $\nu\approx 0.5$ and $\pm3.5$ at $B\approx 0$ in TBG proximitized by tungsten diselenide (WSe$_2$) through magnetotransport and thermoelectricity measurements. A series of Lifshitz transitions due to the changes in the topology of the Fermi surface implies the evolution of van Hove singularities (VHSs) of the diverging density of states (DOS) at a discrete set of partial fillings of flat bands. Furthermore, at a band filling of $\nu\approx-0.5$, a symmetry-broken Chern insulator emerges at high $B$, compatible with the band structure calculations within a translational symmetry-broken supercell with twice the area of the original TBG moiré cell. Our results are consistent with a spin/charge density wave ground state in TBG in the zero $B$-field limit.

Using angle-resolved photoemission spectroscopy, we show the direct evidence of charge transfer between adsorbed molecules and metal substrate, i.e. chemisorption of CO on Pt(111) and Pt-Sn/Pt(111) 2x2 surfaces. The observed band structure shows a unique signature of charge transfer as CO atoms are adsorbed,revealing the roles of specific orbital characters participating in the chemisorption process. As the coverage of CO increases, the degree of charge transfer between CO and Pt shows clear difference to that of Pt-Sn. With comparison to DFT calculation results, the observed distinct features in the band structure are interpreted as backdonation bonding states of Pt molecular orbital to the 2\pi orbital of CO. Furthermore, the change in the surface charge concentration, measured from the Fermi surface area, shows Pt surface has a larger charge concentration change than Pt-Sn surface upon CO adsorption. The difference in the charge concentration change between Pt and Pt-Sn surfaces reflects the degree of electronic effects during CO adsorption on Pt-Sn.

The interaction of spin-polarized one-dimensional (1D) topological edge modes localized along single-atomic steps of the topological crystalline insulator $Pb_{0.7}Sn_{0.3}Se(001)$ has been studied systematically by scanning tunneling spectroscopy. Our results reveal that the coupling of adjacent edge modes sets in at a steptostep distance $d_{ss} < 25$ nm, resulting in a characteristic splitting of a single peak at the Dirac point in tunneling spectra. Whereas the energy splitting exponentially increases with decreasing $d_{ss}$ for single-atomic steps running almost parallel, we find no splitting for single-atomic step edges under an angle of $90^{o}$. The results are discussed in terms of overlapping wave functions with $p_x; p_y$ orbital character.

The family of group IV-VI monochalcogenides has an atomically puckered layered structure, and their atomic bond configuration suggests the possibility for the realization of various polymorphs. Here, we report the synthesis of the first hexagonal polymorph from the family of group IV-VI monochalcogenides, which is conventionally orthorhombic. Recently predicted four-atomic-thick hexagonal GeSe, so-called \gamma-GeSe, is synthesized and clearly identified by complementary structural characterizations, including elemental analysis, electron diffraction, high-resolution transmission electron microscopy imaging, and polarized Raman spectroscopy. The electrical and optical measurements indicate that synthesized \gamma-GeSe exhibits high electrical conductivity of 3x10^5 S/m, which is comparable to those of other two-dimensional layered semimetallic crystals. Moreover, \gamma-GeSe can be directly grown on h-BN substrates, demonstrating a bottom-up approach for constructing vertical van der Waals heterostructures incorporating \gamma-GeSe. The newly identified crystal symmetry of \gamma-GeSe warrants further studies on various physical properties of \gamma-GeSe.

This paper presents the predictive accuracy using two-variate meteorological factors, average temperature and average humidity, in neural network algorithms. We analyze result in five learning architectures such as the traditional artificial neural network, deep neural network, and extreme learning machine, long short-term memory, and long-short-term memory with peephole connections, after manipulating the computer-simulation. Our neural network modes are trained on the daily time-series dataset during seven years (from 2014 to 2020). From the trained results for 2500, 5000, and 7500 epochs, we obtain the predicted accuracies of the meteorological factors produced from outputs in ten metropolitan cities (Seoul, Daejeon, Daegu, Busan, Incheon, Gwangju, Pohang, Mokpo, Tongyeong, and Jeonju). The error statistics is found from the result of outputs, and we compare these values to each other after the manipulation of five neural networks. As using the long-short-term memory model in testing 1 (the average temperature predicted from the input layer with six input nodes), Tonyeong has the lowest root mean squared error (RMSE) value of 0.866 $(%)$ in summer from the computer-simulation in order to predict the temperature. To predict the humidity, the RMSE is shown the lowest value of 5.732 $(%)$, when using the long short-term memory model in summer in Mokpo in testing 2 (the average humidity predicted from the input layer with six input nodes). Particularly, the long short-term memory model is is found to be more accurate in forecasting daily levels than other neural network models in temperature and humidity forecastings. Our result may provide a computer-simuation basis for the necessity of exploring and develping a novel neural network evaluation method in the future.

Nanoscale layered ferromagnets have demonstrated fascinating two-dimensional magnetism down to atomic layers, providing a peculiar playground of spin orders for investigating fundamental physics and spintronic applications. However, strategy for growing films with designed magnetic properties is not well established yet. Herein, we present a versatile method to control the Curie temperature (T_C) and magnetic anisotropy during growth of ultrathin Cr_2Te_3 films. We demonstrate increase of the TC from 165 K to 310 K in sync with magnetic anisotropy switching from an out-of-plane orientation to an in-plane one, respectively, via controlling the Te source flux during film growth, leading to different c-lattice parameters while preserving the stoichiometries and thicknesses of the films. We attributed this modulation of magnetic anisotropy to the switching of the orbital magnetic moment, using X-ray magnetic circular dichroism analysis. We also inferred that different c-lattice constants might be responsible for the magnetic anisotropy change, supported by theoretical calculations. These findings emphasize the potential of ultrathin Cr_2Te_3 films as candidates for developing room-temperature spintronics applications and similar growth strategies could be applicable to fabricate other nanoscale layered magnetic compounds.

Trilayer graphene with a twisted middle layer has recently emerged as a new platform exhibiting correlated phases and superconductivity near its magic angle. A detailed characterization of its electronic structure in the parameter space of twist angle $\theta$, interlayer potential difference $\Delta$, and top-bottom layer stacking $\tau$ reveals that flat bands with large Coulomb energy vs bandwidth $U/W > 1$ are expected within a range of $\pm 0.2^{\circ}$ near $\theta \simeq1.5^{\circ}$ and $\theta \simeq1.2^{\circ}$ for $\tau_{\rm AA}$ top-bottom layer stacking, between a wider $1^{\circ} \sim 1.7^{\circ}$ range for $\tau_{\rm AB}$ stacking, whose bands often have finite valley Chern numbers thanks to the opening of primary and secondary band gaps in the presence of a finite $\Delta$, and below $\theta \lesssim 0.6^{\circ}$ for all $\tau$ considered. The largest $U/W$ ratios are expected at the magic angle $\sim 1.5^{\circ}$ when $|\Delta| \sim 0$~meV for AA, and slightly below near $\sim 1.4^{\circ}$ for finite $|\Delta| \sim 25$~meV for AB stackings, and near $\theta \sim 0.4^{\circ}$ for both stackings. When ${\tau}$ is the saddle point stacking vector between AB and BA we observe pronounced anisotropic local density of states (LDOS) strip patterns with broken triangular rotational symmetry. We present optical conductivity calculations that reflect the changes in the electronic structure introduced by the stacking and gate tunable system parameters.

Strong spin-orbit semiconductor nanowires coupled to a superconductor are predicted to host Majorana zero modes. Exchange (braiding) operations of Majorana modes form the logical gates of a topological quantum computer and require a network of nanowires. Here, we develop an in-plane selective-area growth technique for InSb-Al semiconductor-superconductor nanowire networks with excellent quantum transport properties. Defect-free transport channels in InSb nanowire networks are realized on insulating, but heavily mismatched InP substrates by 1) full relaxation of the lattice mismatch at the nanowire/substrate interface on a (111)B substrate orientation, 2) nucleation of a complete network from a single nucleation site, which is accomplished by optimizing the surface diffusion length of the adatoms. Essential quantum transport phenomena for topological quantum computing are demonstrated in these structures including phase-coherent transport up to 10 $\mu$m and a hard superconducting gap accompanied by 2$e$-periodic Coulomb oscillations with an Al-based Cooper pair island integrated in the nanowire network.

The heavy fermion state with Kondo-hybridization (KH), usually manifested in f-electron systems with lanthanide or actinide elements, was recently discovered in several 3d transition metal compounds without f-electrons. However, KH has not yet been observed in 4d/5d transition metal compounds, since more extended 4d/5d orbitals do not usually form flat bands that supply localized electrons appropriate for Kondo pairing. Here, we report a doping- and temperature-dependent angle-resolved photoemission study on 4d Ca2-xSrxRuO4, which shows the signature of KH. We observed a spectral weight transfer in the \gamma-band, reminiscent of an orbital-selective Mott phase (OSMP). The Mott localized \gamma-band induces KH with the itinerant e̱ta-band, resulting in spectral weight suppression around the Fermi level. Our work is the first to demonstrate the evolution of the OSMP with possible KH among 4d electrons, and thereby expands the material boundary of Kondo physics to 4d multi-orbital systems.

Rhombohedral $N = 3$ trilayer graphene on hexagonal boron nitride (TLG/BN) hosts gate-tunable, valley-contrasting, nearly flat topological bands that can trigger spontaneous quantum Hall phases under appropriate conditions of the valley and spin polarization. Recent experiments have shown signatures of C = 2 valley Chern bands at 1/4 hole filling, in contrast to the predicted value of C = 3. We discuss the low-energy model for rhombohedral N-layer graphene (N = 1, 2, 3) aligned with hexagonal boron nitride (hBN) subject to off-diagonal moire vector potential terms that can alter the valley Chern numbers. Our analysis suggests that topological phase transitions of the flat bands can be triggered by pseudomagnetic vector field potentials associated to moire strain patterns, and that a nematic order with broken rotational symmetry can lead to valley Chern numbers that are in agreement with recent Hall conductivity observations.

It is important to calculate and analyze temperature and humidity prediction accuracies among quantitative meteorological forecasting. This study manipulates the extant neural network methods to foster the predictive accuracy. To achieve such tasks, we analyze and explore the predictive accuracy and performance in the neural networks using two combined meteorological factors (temperature and humidity). Simulated studies are performed by applying the artificial neural network (ANN), deep neural network (DNN), extreme learning machine (ELM), long short-term memory (LSTM), and long short-term memory with peephole connections (LSTM-PC) machine learning methods, and the accurate prediction value are compared to that obtained from each other methods. Data are extracted from low frequency time-series of ten metropolitan cities of South Korea from March 2014 to February 2020 to validate our observations. To test the robustness of methods, the error of LSTM is found to outperform that of the other four methods in predictive accuracy. Particularly, as testing results, the temperature prediction of LSTM in summer in Tongyeong has a root mean squared error (RMSE) value of 0.866 lower than that of other neural network methods, while the mean absolute percentage error (MAPE) value of LSTM for humidity prediction is 5.525 in summer in Mokpo, significantly better than other metropolitan cities.

Geometry of the wave function is a central pillar of modern solid state physics. In this work, we unveil the wave-function geometry of two-dimensional semimetals with band crossing points (BCPs). We show that the Berry phase of BCPs are governed by the quantum metric describing the infinitesimal distance between quantum states. For generic linear BCPs, we show that the corresponding Berry phase is determined either by an angular integral of the quantum metric, or equivalently, by the maximum quantum distance of Bloch states. This naturally explains the origin of the $\pi$-Berry phase of a linear BCP. In the case of quadratic BCPs, the Berry phase can take an arbitrary value between 0 and $2\pi$. We find simple relations between the Berry phase, maximum quantum distance, and the quantum metric in two cases: (i) when one of the two crossing bands is flat; (ii) when the system has rotation and/or time-reversal symmetries. To demonstrate the implication of the continuum model analysis in lattice systems, we study tight-binding Hamiltonians describing quadratic BCPs. We show that, when the Berry curvature is absent, a quadratic BCP with an arbitrary Berry phase always accompanies another quadratic BCP so that the total Berry phase of the periodic system becomes zero. This work demonstrates that the quantum metric plays a critical role in understanding the geometric properties of topological semimetals.

Spontaneous orbital magnetism observed in twisted bilayer graphene (tBG) on nearly aligned hexagonal boron nitride (BN) substrate builds on top of the electronic structure resulting from combined G/G and G/BN double moire interfaces. Here we show that tBG/BN commensurate double moire patterns can be classified into two types, each favoring the narrowing of either the conduction or valence bands on average, and obtain the evolution of the bands as a function of the interlayer sliding vectors and electric fields. Finite valley Chern numbers $\pm 1$ are found in a wide range of parameter space when the moire bands are isolated through gaps, while the local density of states associated to the flat bands are weakly affected by the BN substrate invariably concentrating around the AA-stacked regions of tBG. We illustrate the impact of the BN substrate for a particularly pronounced electron-hole asymmetric band structure by calculating the optical conductivities of twisted bilayer graphene near the magic angle as a function of carrier density. The band structures corresponding to other $N$-multiple commensurate moire period ratios indicate it is possible to achieve narrow width $W \lesssim 30$ meV isolated folded band bundles for tBG angles $\theta \lesssim 1^{\circ}$.

We study the spatial distributions of the spin and mass currents generated by a moving Gaussian magnetic obstacle in a symmetric, two-component Bose-Einstein condensate in two dimensions. We analytically describe the current distributions for a slow obstacle and show that the spin and the mass currents exhibit characteristic spatial structures resembling those of electromagnetic fields around dipole moments. When the obstacle's velocity increases, we numerically observe that the flow pattern maintains its overall structure while the spin polarization induced by the obstacle is enhanced with an increased spin current. We investigate the critical velocity of the magnetic obstacle based on the local criterion of Landau energetic instability and find that it decreases almost linearly as the magnitude of the obstacle's potential increases, which can be directly tested in current experiments.

Electron emission can be utilised to measure the work function of the surface. However, the number of significant digits in the values obtained through thermionic-, field- and photo-emission techniques is typically just two or three. Here, we show that the number can go up to five when angle-resolved photoemission spectroscopy (ARPES) is applied. This owes to the capability of ARPES to detect the slowest photoelectrons that are directed only along the surface normal. By using a laser-based source, we optimised our setup for the slow photoelectrons and resolved the slowest-end cutoff of Au(111) with the sharpness not deteriorated by the bandwidth of light nor by Fermi-Dirac distribution. The work function was leveled within $\pm$0.4 meV at least from 30 to 90 K and the surface aging was discerned as a meV shift of the work function. Our study opens the investigations into the fifth significant digit of the work function.

Prediction of the stable crystal structure for multinary (ternary or higher) compounds with unexplored compositions demands fast and accurate evaluation of free energies in exploring the vast configurational space. The machine-learning potential such as the neural network potential (NNP) is poised to meet this requirement but a dearth of information on the crystal structure poses a challenge in choosing training sets. Herein we propose constructing the training set from densityfunctional-theory (DFT) based dynamical trajectories of liquid and quenched amorphous phases, which does not require any preceding information on material structures except for the chemical composition. To demonstrate suitability of the trained NNP in the crystal structure prediction, we compare NNP and DFT energies for Ba2AgSi3, Mg2SiO4, LiAlCl4, and InTe2O5F over experimental phases as well as low-energy crystal structures that are generated theoretically. For every material, we find strong correlations between DFT and NNP energies, ensuring that the NNPs can properly rank energies among low-energy crystalline structures. We also find that the evolutionary search using the NNPs can identify low-energy metastable phases more efficiently than the DFTbased approach. By proposing a way to developing reliable machine-learning potentials for the crystal structure prediction, this work will pave the way to identifying unexplored multinary phases efficiently.

Effects of electron many-body interactions amplify in an electronic system with a narrow bandwidth opening a way to exotic physics. A narrow band in a two-dimensional (2D) honeycomb lattice is particularly intriguing as combined with Dirac bands and topological properties but the material realization of a strongly interacting honeycomb lattice described by the Kane-Mele-Hubbard model has not been identified. Here we report a novel approach to realize a 2D honeycomb-lattice narrow-band system with strongly interacting 5$d$ electrons. We engineer a well-known triangular lattice 2D Mott insulator 1T-TaS$_2$ into a honeycomb lattice utilizing an adsorbate superstructure. Potassium (K) adatoms at an optimum coverage deplete one-third of the unpaired $d$ electrons and the remaining electrons form a honeycomb lattice with a very small hopping. Ab initio calculations show extremely narrow Z$_2$ topological bands mimicking the Kane-Mele model. Electron spectroscopy detects an order of magnitude bigger charge gap confirming the substantial electron correlation as confirmed by dynamical mean field theory. It could be the first artificial Mott insulator with a finite spin Chern number.

Two-dimensional heterostructures with layers of slightly different lattice vectors exhibit a new periodic structure known as moire lattices. Moire lattice formation provides a powerful new way to engineer the electronic structure of two-dimensional materials for realizing novel correlated and topological phenomena. In addition, superstructures of moire lattices can emerge from multiple misaligned lattice vectors or inhomogeneous strain distribution, which offers an extra degree of freedom in the electronic band structure design. High-resolution imaging of the moire lattices and superstructures is critical for quantitative understanding of emerging moire physics. Here we report the nanoscale imaging of moire lattices and superstructures in various graphene-based samples under ambient conditions using an ultra-high-resolution implementation of scanning microwave impedance microscopy. We show that, quite remarkably, although the scanning probe tip has a gross radius of ~100 nm, an ultra-high spatial resolution in local conductivity profiles better than 5 nm can be achieved. This resolution enhancement not only enables to directly visualize the moire lattices in magic-angle twisted double bilayer graphene and composite super-moire lattices, but also allows design path toward artificial synthesis of novel moire superstructures such as the Kagome moire from the interplay and the supermodulation between twisted graphene and hexagonal boron nitride layers.

We investigate the band structure of twisted monolayer-bilayer graphene (tMBG), or twisted graphene on bilayer graphene (tGBG), as a function of twist angles and perpendicular electric fields in search of optimum conditions for achieving isolated nearly flat bands. Narrow bandwidths comparable or smaller than the effective Coulomb energies satisfying $U_{\textrm{eff}} /W \gtrsim 1$ are expected for twist angles in the range of $0.3^{\circ} \sim 1.5^{\circ}$, more specifically in islands around $\theta \sim 0.5^{\circ}, \, 0.85^{\circ}, \,1.3^{\circ}$ for appropriate perpendicular electric field magnitudes and directions. The valley Chern numbers of the electron-hole asymmetric bands depend intrinsically on the details of the hopping terms in the bilayer graphene, and extrinsically on factors like electric fields or average staggered potentials in the graphene layer aligned with the contacting hexagonal boron nitride substrate. This tunability of the band isolation, bandwidth, and valley Chern numbers makes of tMBG a more versatile system than twisted bilayer graphene for finding nearly flat bands prone to strong correlations.

2D materials based superlattices have emerged as a promising platform to modulate band structure and its symmetries. In particular, moiré periodicity in twisted graphene systems produces flat Chern bands. The recent observation of anomalous Hall effect (AHE) and orbital magnetism in twisted bilayer graphene has been associated with spontaneous symmetry breaking of such Chern bands. However, the valley Hall state as a precursor of AHE state, when time-reversal symmetry is still protected, has not been observed. Our work probes this precursor state using the valley Hall effect. We show that broken inversion symmetry in twisted double bilayer graphene (TDBG) facilitates the generation of bulk valley current by reporting the first experimental evidence of nonlocal transport in a nearly flat band system. Despite the spread of Berry curvature hotspots and reduced quasiparticle velocities of the carriers in these flat bands, we observe large nonlocal voltage several micrometers away from the charge current path -- this persists when the Fermi energy lies inside a gap with large Berry curvature. The high sensitivity of the nonlocal voltage to gate tunable carrier density and gap modulating perpendicular electric field makes TDBG an attractive platform for valley-twistronics based on flat bands.