The alignment of permanent dipole moments and the resulting spontaneous orientation polarization (SOP) is commonly observed in evaporated neat films of polar organic molecules and leads to a so-called giant surface potential. In case of mixed films, often enhanced molecular orientation is observed, i.e.\ a higher degree of alignment, in comparison to neat layers, if it is diluted into a suitable (non-polar) host. So far, different possible influences on molecular orientation have been discussed, the most prominent probably being the so-called surface equilibration model. In this contribution, we discuss how surface equilibration can influence orientation in mixed layers, and which other intermolecular interactions have to be considered to explain the observed enhancement of SOP in mixed layers.
Planar semiconductor heterostructures offer versatile device designs and are promising candidates for scalable quantum computing. Notably, heterostructures based on strained germanium have been extensively studied in recent years, with emphasis on their strong and tunable spin-orbit interaction, low effective mass, and high hole mobility. However, planar systems are still limited by the fact that the shape of the confinement potential is directly related to the density. In this work, we present the successful implementation of a backgate for a planar germanium heterostructure. The backgate, in combination with a topgate, enables independent control over the density and the electric field, which determines important state properties such as the effective mass, the $g$-factor and the quantum lifetime. This unparalleled degree of control paves the way towards engineering qubit properties and facilitates the targetted tuning of bilayer quantum wells, which promise denser qubit packing.
A great deal of interest is directed nowadays towards the development of innovative technologies in the field of quantum information and quantum computing, with emphasis on obtaining reliable qubits as building blocks. The realization of highly stable, controllable and accessible hole spin qubits is strongly dependent on the quality of the materials hosting them. Ultra-clean germanium/silicon-germanium heterostructures have been predicted and proven to be promising candidates and due to their large scalability potential, they are opening the door towards the development of realistic and reliable solid state, all-electric, silicon-based quantum computers. In order to obtain ultra-clean germanium/silicon-germanium heterostructures in a reverse grading approach, the understanding and control over the growth of Ge virtual substrates and thin films is key. Here, we present a detailed study on the growth kinetics, morphology, and crystal quality of Ge thin films grown via chemical vapor deposition by investigating the effects of growth temperature, partial pressure of the precursor gas and the use of Ar or H2 atmosphere. The presence of carrier gases catalyzes the deposition rate and induces a smoothening on the surfaces of films grown at low temperatures. We investigated the surface roughness and threading dislocation density as a function of deposition temperature, partial pressure and gas mixture. Ge thin films deposited by diluting GeH4 in Ar or H2 were employed as virtual substrates for the growth of full Ge/SiGe QW heterostructures. Their defect density was analyzed and their electric transport properties were characterized via Hall measurements. Similar results were obtained for both carrier gases used.
Upon film growth by physical vapor deposition, the preferential orientation of polar organic molecules can result in a non-zero permanent dipole moment (PDM) alignment, causing a macroscopic film polarization. This effect, known as spontaneous orientation polarization (SOP), was studied in the case of different phosphine oxides. We investigate the control of SOP by molecular design and film-growth conditions. Our results show that using less polar phosphine oxides with just one phosphor-oxygen bond yields an exceptionally high degree of SOP with the so-called giant surface potential (slope) reaching more than 150mV/nm in a neat BCPO film grown at room temperature. Additionally, by altering the evaporation rate and the substrate temperature, we are able to control the SOP magnitude over a broad range from 0 to almost 300mV/nm. Diluting BCPO in a non-polar host enhances the PDM alignment only marginally, but combining temperature control together with dipolar doping can result in almost perfectly aligned molecules with more than 80% of their PDMs standing upright on the substrate on average.
Hybrid systems comprising superconducting and semiconducting materials are promising architectures for quantum computing. Superconductors induce long-range interactions between the spin degrees of freedom of semiconducting quantum dots. These interactions are widely anisotropic when the semiconductor material has strong spin-orbit interactions. We show that this anisotropy is tunable and enables fast and high-fidelity two-qubit gates between singlet-triplet (ST) spin qubits. Our design is immune to leakage of the quantum information into noncomputational states and removes always-on interactions between the qubits, thus resolving key open challenges for these architectures. Our ST qubits do not require additional technologically demanding components nor fine-tuning of parameters. They operate at low magnetic fields of a few millitesla and are fully compatible with superconductors. By suppressing systematic errors in realistic devices, we estimate infidelities below $10^{-3}$, which could pave the way toward large-scale hybrid superconducting-semiconducting quantum processors.
Hybrid semiconductor-superconductor devices hold great promise for realizing topological quantum computing with Majorana zero modes (MZMs). However, multiple claims of Majorana detection, based on either tunneling or Coulomb blockade (CB) spectroscopy, remain disputed. Here we devise an experimental protocol that allows to perform both types of measurements on the same hybrid island by adjusting its charging energy via tunable junctions to the normal leads. This method reduces ambiguities of Majorana detections by checking the consistency between CB spectroscopy and zero bias peaks (ZBPs) in non-blockaded transport.Specifically, we observe junction-dependent, even-odd modulated, single-electron CB peaks in InAs/Al hybrid nanowires (NWs) without concomitant low-bias peaks in tunneling spectroscopy. We provide a theoretical interpretation of the experimental observations in terms of low-energy, longitudinally-confined island states rather than overlapping Majorana modes. Our results highlight the importance of combined measurements on the same device for the identification of topological MZMs.
Daniel Jirovec, Philipp M. Mutter, Andrea Hofmann, Josip Kukucka, Alessandro Crippa, Frederico Martins, Andrea Ballabio, Daniel Chrastina, Giovanni Isella, Guido Burkard, Georgios Katsaros The spin-orbit interaction is the key element for electrically tunable spin qubits. Here we probe the effect of cubic Rashba spin-orbit interaction on mixing of the spin states by investigating singlet-triplet oscillations in a planar Ge hole double quantum dot. By varying the magnetic field direction we find an intriguing transformation of the funnel into a butterfly-shaped pattern. Landau-Zener sweeps disentangle the Zeeman mixing effect from the spin-orbit induced coupling and show that large singlet-triplet avoided crossings do not imply a strong spin-orbit interaction. Our work emphasizes the need for a complete knowledge of the energy landscape when working with hole spin qubits.
Viktoriia Untilova, Jonna Hynynen, Anna I. Hofmann, Dorothea Scheunemann, Yadong Zhang, Stephen Barlow, Martijn Kemerink, Seth R. Marder, Laure Biniek, Christian Müller, Martin Brinkmann Here we report a record thermoelectric power factor of up to 160 $\mu$ W m-1 K-2 for the conjugated polymer poly(3-hexylthiophene) (P3HT). This result is achieved through the combination of high-temperature rubbing of thin films together with the use of a large molybdenum dithiolene p-dopant with a high electron affinity. Comparison of the UV-vis-NIR spectra of the chemically doped samples to electrochemically oxidized material reveals an oxidation level of 10%, i.e. one polaron for every 10 repeat units. The high power factor arises due to an increase in the charge-carrier mobility and hence electrical conductivity along the rubbing direction. We conclude that P3HT, with its facile synthesis and outstanding processability, should not be ruled out as a potential thermoelectric material.
We image equilibrium and non-equilibrium transport through a two-dimensional electronic cavity using scanning gate microscopy (SGM). Injecting electrons into the cavity through a quantum point contact close to equilibrium, we raster-scan a weakly invasive tip above the cavity regions and measure the modulated conductance through the cavity. Varying the electron injection energy between $\pm$ 2 meV, we observe that conductance minima turn into maxima beyond the energy threshold of $\pm$ 0.6 meV. This observation bears similarity to previous measurements by Jura et al. [Jura et al., Phys. Rev. B 82, 155328 (2010)] who used a strongly invasive tip potential to study electron injection into an open two-dimensional electron gas. This resemblance suggests a similar microscopic origin based on electron-electron interactions.
Kushagra Aggarwal, Andrea Hofmann, Daniel Jirovec, Ivan Prieto, Amir Sammak, Marc Botifoll, Sara Marti-Sanchez, Menno Veldhorst, Jordi Arbiol, Giordano Scappucci, Jeroen Danon, Georgios Katsaros Hole gases in planar germanium can have high mobilities in combination with strong spin-orbit interaction and electrically tunable g-factors, and are therefore emerging as a promising platform for creating hybrid superconductor-semiconductor devices. A key challenge towards hybrid Ge-based quantum technologies is the design of high-quality interfaces and superconducting contacts that are robust against magnetic fields. In this work, by combining the assets of aluminum, which provides good contact to the Ge, and niobium, which has a significant superconducting gap, we demonstrate highly transparent low-disordered JoFETs with relatively large \IcRn \ products that are capable of withstanding high magnetic fields. We furthermore demonstrate the ability of phase-biasing individual JoFETs, opening up an avenue to explore topological superconductivity in planar Ge. The persistence of superconductivity in the reported hybrid devices beyond 1.8 Tesla paves the way towards integrating spin qubits and proximity-induced superconductivity on the same chip.
Daniel Jirovec, Andrea Hofmann, Andrea Ballabio, Philipp M. Mutter, Giulio Tavani, Marc Botifoll, Alessandro Crippa, Josip Kukucka, Oliver Sagi, Frederico Martins, Jaime Saez-Mollejo, Ivan Prieto, Maksim Borovkov, Jordi Arbiol, Daniel Chrastina, Giovanni Isella, Georgios Katsaros Spin qubits are considered to be among the most promising candidates for building a quantum processor. GroupIV hole spin qubits have moved into the focus of interest due to the ease of operation and compatibility with Si technology. In addition, Ge offers the option for monolithic superconductor-semiconductor integration. Here we demonstrate a hole spin qubit operating at fields below 10 mT, the critical field of Al, by exploiting the large out-of-plane hole g-factors in planar Ge and by encoding the qubit into the singlet-triplet states of a double quantum dot. We observe electrically controlled g-factor-difference-driven and exchange-driven rotations with tunable frequencies exceeding 100 MHz and dephasing times of 1 $\mu$s which we extend beyond 150 $\mu$s with echo techniques. These results demonstrate that Ge hole singlet-triplet qubits are competing with state-of-the art GaAs and Si singlet-triplet qubits. In addition, their rotation frequencies and coherence are on par with Ge single spin qubits, but they can be operated at much lower fields underlining their potential for on chip integration with superconducting technologies.
Carolin Gold, Beat A. Bräm, Michael S. Ferguson, Tobias Krähenmann, Andrea Hofmann, Richard Steinacher, Keith R. Fratus, Christian Reichl, Werner Wegscheider, Dietmar Weinmann, Klaus Ensslin, Thomas Ihn We use Scanning Gate Microscopy to study electron transport through an open, gate-defined resonator in a Ga(Al)As heterostructure. Raster-scanning the voltage-biased metallic tip above the resonator, we observe distinct conductance modulations as a function of the tip-position and voltage. Quantum mechanical simulations reproduce these conductance modulations and reveal their relation to the partial local density of states in the resonator. Our measurements illustrate the current frontier between possibilities and limitations in imaging the local density of states in buried electron systems using scanning gate microscopy.
A semiconducting nanowire fully wrapped by a superconducting shell has been proposed as a platform for obtaining Majorana modes at small magnetic fields. In this study, we demonstrate that the appearance of subgap states in such structures is actually governed by the junction region in tunneling spectroscopy measurements, and not the full-shell nanowire itself. Short tunneling regions never show subgap states, whereas longer junctions always do. This can be understood in terms of quantum dots forming in the junction and hosting Andreev levels in the Yu-Shiba-Rusinov regime. The intricate magnetic field dependence of the Andreev levels, through both the Zeeman and Little-Parks effects, may result in robust zero-bias peaks, features that could be easily misinterpreted as originating from Majorana zero modes, but are unrelated to topological superconductivity.
We study phonon emission in a GaAs/AlGaAs double quantum dot by monitoring the tunneling of a single electron between the two dots. We prepare the system such that a known amount of energy is emitted in the transition process. The energy is converted into lattice vibrations and the resulting tunneling rate depends strongly on the phonon scattering and its effective phonon spectral density. We are able to fit the measured transition rates and see imprints of interference of phonons with themselves causing oscillations in the transition rates.
We study double quantum dots in a Ge/SiGe heterostructure and test their maturity towards singlet-triplet ($S-T_0$) qubits. We demonstrate a large range of tunability, from two single quantum dots to a double quantum dot. We measure Pauli spin blockade and study the anisotropy of the $g$-factor. We use an adjacent quantum dot for sensing charge transitions in the double quantum dot at interest. In conclusion, Ge/SiGe possesses all ingredients necessary for building a singlet-triplet qubit.
Experiments performed at a temperature of a few millikelvin require effective thermalization schemes, low-pass filtering of the measurement lines and low-noise electronics. Here, we report on the modifications to a commercial dilution refrigerator with a base temperature of 3.5 mK that enable us to lower the electron temperature to 6.7 mK measured from the Coulomb peak width of a quantum dot gate-defined in an [Al]GaAs heteostructure. We present the design and implementation of a liquid $^4$He immersion cell tight against superleaks, implement an innovative wiring technology and develop optimized transport measurement procedures.
Many proteins have the potential to aggregate into amyloid fibrils, which are associated with a wide range of human disorders including Alzheimer's and Parkinson's disease. In contrast to that of folded proteins, the thermodynamic stability of amyloid fibrils is not well understood: specifically the balance between entropic and enthalpic terms, including the chain entropy and the hydrophobic effect, are poorly characterised. Using simulations of a coarse-grained protein model we delineate the enthalpic and entropic contributions dominating amyloid fibril elongation, predicting a characteristic temperature-dependent enthalpic signature. We confirm this thermodynamic signature by performing calorimetric experiments and a meta-analysis over published data. From these results, we can also elucidate the necessary conditions to observe cold denaturation of amyloid fibrils. Overall, we show that amyloid fibril elongation is associated with a negative heat capacity, the magnitude of which correlates closely with the hydrophobic surface area that is buried upon fibril formation, highlighting the importance of hydrophobicity for fibril stability.
R. Steinacher, C. Pöltl, T. Krähenmann, A. Hofmann, C. Reichl, W. Zwerger, W. Wegscheider, R. A. Jalabert, K. Ensslin, D. Weinmann, T. Ihn An open resonator fabricated in a two-dimensional electron gas is used to explore the transition from strongly invasive scanning gate microscopy to the perturbative regime of weak tip-induced potentials. With the help of numerical simulations that faithfully reproduce the main experimental findings, we quantify the extent of the perturbative regime in which the tip-induced conductance change is unambiguously determined by properties of the unperturbed system. The correspondence between the experimental and numerical results is established by analyzing the characteristic length scale and the amplitude modulation of the conductance change. In the perturbative regime, the former is shown to assume a disorder-dependent maximum value, while the latter linearly increases with the strength of a weak tip potential.
The spin-flip tunneling rates are measured in GaAs-based double quantum dots by time-resolved charge detection. Such processes occur in the Pauli spin blockade regime with two electrons occupying the double quantum dot. Ways are presented for tuning the spin-flip tunneling rate, which on the one hand gives access to measuring the Rashba and Dresselhaus spin--orbit coefficents. On the other hand they make it possible to turn on and off the effect of SOI with a high on/off-ratio. The tuning is accomplished by choosing the alignment of the tunneling direction with respect to the crystallographic axes, as well as by choosing the orientation of the external magnetic field with respect to the spin--orbit magnetic field. Spin-lifetimes of 10 s are achieved at a tunnel rate close to 1 kHz.
While thermodynamics is a useful tool to describe the driving of large systems close to equilibrium, fluctuations dominate the distribution of heat and work in small systems and far from equilibrium. We study the heat generated by driving a small system and change the drive parameters to analyse the transition from a drive leaving the system close to equilibrium to driving it far from equilibrium. Our system is a quantum dot in a GaAs/AlGaAs heterostructure hosting a two-dimensional electron gas. The dot is tunnel-coupled to one part of the two-dimensional electron gas acting as a heat and particle reservoir. We use standard rate equations to model the driven dot-reservoir system and find excellent agreement with the experiment. Additionally, we quantify the fluctuations by experimentally test the theoretical concept of the arrow of time, predicting our ability to distinguish whether a process goes in the forward or backward drive direction.
Andrea Hofmann, Ville F. Maisi, Carolin Gold, Tobias Krähenmann, Clemens Rössler, Julien Basset, Peter Märki, Christian Reichl, Werner Wegscheider, Klaus Ensslin, Thomas Ihn We demonstrate an experimental method for measuring quantum state degeneracies in bound state energy spectra. The technique is based on the general principle of detailed balance, and the ability to perform precise and efficient measurements of energy-dependent tunnelling-in and -out rates from a reservoir. The method is realized using a GaAs/AlGaAs quantum dot allowing for the detection of time-resolved single-electron tunnelling with a precision enhanced by a feedback-control. It is thoroughly tested by tuning orbital and spin-degeneracies with electric and magnetic fields. The technique also lends itself for studying the connection between the ground state degeneracy and the lifetime of the excited states.
We utilize electron counting techniques to distinguish a spin conserving fast tunneling process and a slower process involving spin flips in AlGaAs/GaAs-based double quantum dots. By studying the dependence of the rates on the interdot tunnel coupling of the two dots, we find that as many as 4% of the tunneling events occur with a spin flip related to spin-orbit coupling in GaAs. Our measurement has a fidelity of 99 % in terms of resolving whether a tunneling event occurred with a spin flip or not.
Szymon Hennel, Beat A. Braem, Stephan Baer, Lars Tiemann, Pirouz Sohi, Dominik Wehrli, Andrea Hofmann, Christian Reichl, Werner Wegscheider, Clemens Rössler, Thomas Ihn, Klaus Ensslin, Mark S. Rudner, Bernd Rosenow In a quantum Hall ferromagnet, the spin polarization of the two-dimensional electron system can be dynamically transferred to nuclear spins in its vicinity through the hyperfine interaction. The resulting nuclear field typically acts back locally, modifying the local electronic Zeeman energy. Here we report a non-local effect arising from the interplay between nuclear polarization and the spatial structure of electronic domains in a $\nu=2/3$ fractional quantum Hall state. In our experiments, we use a quantum point contact to locally control and probe the domain structure of different spin configurations emerging at the spin phase transition. Feedback between nuclear and electronic degrees of freedom gives rise to memristive behavior, where electronic transport through the quantum point contact depends on the history of current flow. We propose a model for this effect which suggests a novel route to studying edge states in fractional quantum Hall systems and may account for so-far unexplained oscillatory electronic-transport features observed in previous studies.
We study out-of equilibrium properties of a quantum dot in a GaAs/AlGaAs two-dimensional electron gas. By means of single electron counting experiments, we measure the distribution of work and dissipated heat of the driven quantum dot and relate these quantities to the equilibrium free energy change, as it has been proposed by C. Jarzynski [Phys. Rev. Lett. \bf78, 2690 (1997)]. We discuss the influence of the degeneracy of the quantized energy state on the free energy change as well as its relation to the tunnel rates between the dot and the reservoir.
Clemens Rössler, David Oehri, Oded Zilberberg, Gianni Blatter, Matija Karalic, Jana Pijnenburg, Andrea Hofmann, Thomas Ihn, Klaus Ensslin, Christian Reichl, Werner Wegscheider Quantum engineering requires controllable artificial systems with quantum coherence exceeding the device size and operation time. This can be achieved with geometrically confined low-dimensional electronic structures embedded within ultraclean materials, with prominent examples being artificial atoms (quantum dots) and quantum corrals (electronic cavities). Combining the two structures, we implement a mesoscopic coupled dot-cavity system in a high-mobility two-dimensional electron gas, and obtain an extended spin-singlet state in the regime of strong dot-cavity coupling. Engineering such extended quantum states presents a viable route for nonlocal spin coupling that is applicable for quantum information processing.
A. Hofmann, X.Y. Cui, J. Schaefer, S. Meyer, P. Hoepfner, C. Blumenstein, M. Paul, L. Patthey, E. Rotenberg, J. Buenemann, F. Gebhard, T. Ohm, W. Weber, R. Claessen The quasiparticle dynamics of electrons in a magnetically ordered state is investigated by high-resolution angle-resolved photoemission of Ni(110) at 10 K. The self-energy is extracted for high binding energies reaching up to 500 meV, using a Gutzwiller calculation as a reference frame for correlated quasiparticles. Significant deviations exist in the 300 meV range, as identified on magnetic bulk bands for the first time. The discrepancy is strikingly well described by a self-energy model assuming interactions with spin excitations. Implications relating to different electron-electron correlation regimes are discussed.
Braneshop, and
the US National Science Foundation.
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