Mihir Date, Francesco Petocchi, Yun Yen, Jonas A. Krieger, Banabir Pal, Vicky Hasse, Emily C. McFarlane, Chris Körner, Jiho Yoon, Matthew D. Watson, Vladimir N. Strocov, Yuanfeng Xu, Ilya Kostanovski, Mazhar N. Ali, Sailong Ju, Nicholas C. Plumb, Michael A. Sentef, Georg Woltersdorf, Michael Schüler, Philipp Werner, et al (3) In a well-ordered crystalline solid, insulating behaviour can arise from two mechanisms: electrons can either scatter off a periodic potential, thus forming band gaps that can lead to a band insulator, or they localize due to strong interactions, resulting in a Mott insulator. For an even number of electrons per unit cell, either band- or Mott-insulators can theoretically occur. However, unambiguously identifying an unconventional Mott-insulator with an even number of electrons experimentally has remained a longstanding challenge due to the lack of a momentum-resolved fingerprint. This challenge has recently become pressing for the layer dimerized van der Waals compound Nb$_3$Br$_8$, which exhibits a puzzling magnetic field-free diode effect when used as a weak link in Josephson junctions, but has previously been considered to be a band-insulator. In this work, we present a unique momentum-resolved signature of a Mott-insulating phase in the spectral function of Nb$_3$Br$_8$: the top of the highest occupied band along the out-of-plane dimerization direction $k_z$ has a momentum space separation of $\Delta k_z=2\pi/d$, whereas the valence band maximum of a band insulator would be separated by less than $\Delta k_z=\pi/d$, where $d$ is the average spacing between the layers. As the strong electron correlations inherent in Mott insulators can lead to unconventional superconductivity, identifying Nb$_3$Br$_8$ as an unconventional Mott-insulator is crucial for understanding its apparent time-reversal symmetry breaking Josephson diode effect. Moreover, the momentum-resolved signature employed here could be used to detect quantum phase transition between band- and Mott-insulating phases in van der Waals heterostructures, where interlayer interactions and correlations can be easily tuned to drive such transition.
Erjian Cheng, Kaipu Wang, Simin Nie, Tianping Ying, Zongkai Li, Yiwei Li, Yang Xu, Houke Chen, Ralf Koban, Horst Borrmann, Walter Schnelle, Vicky Hasse, Meixiao Wang, Yulin Chen, Zhongkai Liu, Claudia Felser Magnetic metals with geometric frustration offer a fertile ground for studying novel states of matter with strong quantum fluctuations and unique electromagnetic responses from conduction electrons coupled to spin textures. Recently, TbTi$_3$Bi$_4$ has emerged as such an intriguing platform as it behaves as a quasi-one-dimension (quasi-1D) Ising magnet with antiferromagnetic orderings at 20.4 K and 3 K, respectively. Magnetic fields along the Tb zigzag-chain direction reveal plateaus at 1/3 and 2/3 of saturated magnetization, respectively. At metamagnetic transition boundaries, a record-high anomalous Hall conductivity of 6.2 $\times$ 10$^5$ $\Omega^{-1}$ cm$^{-1}$ is observed. Within the plateau, noncollinear magnetic texture is suggested. In addition to the characteristic Kagome 2D electronic structure, ARPES unequivocally demonstrates quasi-1D electronic structure from the Tb 5$d$ bands and a quasi-1D hybridization gap in the magnetic state due to band folding with $q$ = (1/3, 0, 0) possibly from the spin-density-wave order along the Tb chain. These findings emphasize the crucial role of mixed dimensionality and the strong coupling between magnetic texture and electronic band structure in regulating physical properties of materials, offering new strategies for designing materials for future spintronics applications.
The chiral anomaly, a hallmark of chiral spin-1/2 Weyl fermions, is an imbalance between left- and right-moving particles that underpins both high and low energy phenomena, including particle decay and negative longitudinal magnetoresistance in Weyl semimetals. The discovery that chiral crystals can host higher-spin generalizations of Weyl quasiparticles without high-energy counterparts, known as multifold fermions, raises the fundamental question of whether the chiral anomaly is a more general phenomenon. Answering this question requires materials with chiral quasiparticles within a sizable energy window around the Fermi level, that are unaffected by trivial extrinsic effects such as current jetting. Here we report the chiral anomaly of multifold fermions in CoSi, which features multifold bands within about 0.85 eV around the Fermi level. By excluding current jetting through the squeezing test, we measure an intrinsic, longitudinal negative magnetoresistance. We develop the semiclassical theory of magnetotransport of multifold fermions that shows that the negative magnetoresistance originates in their chiral anomaly, despite a sizable and detrimental orbital magnetic moment contribution, previously unaccounted for. A concomitant nonlinear Hall effect supports the multifold-fermion origin of magnetotransport. Our work confirms the chiral anomaly of higher-spin generalizations of Weyl fermions, currently inaccessible outside the solid-state.
The topology of the Fermi surface significantly influences the transport properties of a material. Firstly measured through quantum oscillation experiments, the Fermi surfaces of crystals are now commonly characterized using angle-resolved photoemission spectroscopy (ARPES), given the larger information volume it provides. In the case of Weyl semimetals, ARPES has proven remarkably successful in verifying the existence of the Weyl points and the Fermi arcs, which define a Weyl Fermi surface. However, ARPES is limited in resolution, leading to significant uncertainty when measuring relevant features such as the distance between the Weyl points. While quantum oscillation measurements offer higher resolution, they do not reveal insights into the cross-sectional shape of a Fermi surface. Moreover, both techniques lack critical information about transport, like the carriers mean free path. Here, we report measurements unveiling the distinctive peanut-shaped cross-section of the Fermi surface of Weyl fermions and accurately determine the separation between Weyl points in the Weyl semimetal NbP. To surpass the resolution of ARPES, we combine quantum oscillation measurements with transverse electron focusing (TEF) experiments, conducted on microstructured single-crystals. The TEF spectrum relates to the Fermi surface shape, while the frequency of the quantum oscillations to its area. Together, these techniques offer complementary information, enabling the reconstruction of the distinctive Weyl Fermi surface geometry. Concurrently, we extract the electrical transport properties of the bulk Weyl fermions. Our work showcases the integration of quantum oscillations and transverse electron focusing in a singular experiment, allowing for the measurements of complex Fermi surface geometries in high-mobility quantum materials.
Hyeuk Jin Han, Sushant Kumar, Xiaoyang Ji, James L. Hart, Gangtae Jin, David J. Hynek, Quynh P. Sam, Vicky Hasse, Claudia Felser, David G. Cahill, Ravishankar Sundararaman, Judy J. Cha The increasing resistance of Cu interconnects for decreasing dimensions is a major challenge in continued downscaling of integrated circuits beyond the 7-nm technology node as it leads to unacceptable signal delays and power consumption in computing. The resistivity of Cu increases due to electron scattering at surfaces and grain boundaries of the interconnects at the nanoscale. Topological semimetals, owing to their topologically protected surface states and suppressed electron backscattering, are promising material candidates to potentially replace current Cu interconnects as low-resistance interconnects. Here, we report the attractive resistivity scaling of topological metal MoP nanowires and show that the resistivity values are comparable to those of Cu interconnects below 500 nm$^2$ cross-section areas. More importantly, we demonstrate that the dimensional scaling of MoP nanowires, in terms of line resistance versus total cross-sectional area, is superior to those of effective Cu and barrier-less Ru interconnects, suggesting MoP is an attractive solution to the current scaling challenge of Cu interconnects.