Search SciRate

We report the fabrication and characteristics of GaAs/Si p+/n+ heterojunction tunnel diodes. These diodes were fabricated via grafting the freestanding single-crystalline p-type degenerately doped GaAs (4E19 cm-3) nanomembrane (NM) onto single-crystalline n-type Si (5E19 cm-3) substrate. At the heterointerface, an amorphous ultrathin oxygen-enriched layer (UOL) was intentionally engineered through chemical oxidation and atomic layer deposition (ALD). Scanning transmission electron microscopy (STEM) confirmed the formation of the UOL and the single crystallinity of the grafted junction. The resulting tunnel diodes consistently exhibited negative differential resistance (NDR) behavior at room temperature, with a high maximum peak-to-valley current ratio (PVCR) of 36.38, valley voltages ranging from 1.3 to 1.8 V, and a peak tunneling current density of 0.95 kA/cm2. This study not only highlights the critical roles of the UOL as both an interface improvement layer and a quantum tunneling medium, but also establishes "semiconductor grafting" as an effective and versatile method for high-performance, lattice-mismatched heterojunction devices.

Group IV GeSn double-heterostructure (DHS) lasers offer unique advantages of a direct bandgap and CMOS compatibility. However, further improvements in laser performance have been bottlenecked by limited junction properties of GeSn through conventional epitaxy and wafer bonding. This work leverages semiconductor grafting to synthesize and characterize optically pumped ridge edge-emitting lasers (EELs) with an AlGaAs nanomembrane (NM) transfer-printed onto an epitaxially grown GeSn substrate, interfaced by an ultrathin Al2O3 layer. The grafted AlGaAs/GeSn DHS lasers show a lasing threshold of 11.06 mW at 77 K and a maximum lasing temperature of 130 K. These results highlight the potential of the grafting technique for enhancing charge carrier and optical field confinements, paving the way for room-temperature electrically injected GeSn lasers.

GeSn-based SWIR lasers featuring imaging, sensing, and communications has gained dynamic development recently. However, the existing SiGeSn/GeSn double heterostructure lacks adequate electron confinement and is insufficient for room temperature lasing. The recently demonstrated semiconductor grafting technique provides a viable approach towards AlGaAs/GeSn p-i-n heterojunctions with better electron confinement and high-quality interfaces, promising for room temperature electrically pumped GeSn laser devices. Therefore, understanding and quantitatively characterizing the band alignment in this grafted heterojunction is crucial. In this study, we explore the band alignment in the grafted monocrystalline Al0.3Ga0.7As /Ge0.853Sn0.147 p-i-n heterojunction. We determined the bandgap values of AlGaAs and GeSn to be 1.81 eV and 0.434 eV by photoluminescence measurements, respectively. We further conducted X-ray photoelectron spectroscopy measurements and extracted a valence band offset of 0.19 eV and a conduction band offset of 1.186 eV. A Type-I band alignment was confirmed which effectively confining electrons at the AlGaAs/GeSn interface. This study improves our understanding of the interfacial band structure in grafted AlGaAs/GeSn heterostructure, providing experimental evidence of the Type-I band alignment between AlGaAs and GeSn, and paving the way for their application in laser technologies.

This study presents the fabrication and characterizations of an Al$_{0.3}$Ga$_{0.7}$As/Ge$_{0.87}$Sn$_{0.13}$/GeSn p-i-n double heterostructure (DHS) diode following the grafting approach for enhanced optoelectronic applications. By integrating ultra-thin Al$_2$O$_3$ as a quantum tunneling layer and enhancing interfacial double-side passivation, we achieved a heterostructure with a substantial 1.186 eV conduction band barrier between AlGaAs and GeSn, along with a low interfacial density of states. The diode demonstrated impressive electrical characteristics with high uniformity, including a mean ideality factor of 1.47 and a mean rectification ratio of 2.95E103 at +/-2 V across 326 devices, indicating high-quality device fabrication. Comprehensive electrical characterizations, including C-V and I-V profiling, affirm the diode's capability to provide robust electrical confinement and efficient carrier injection. These properties make the Al$_{0.3}$Ga$_{0.7}$As/Ge$_{0.87}$Sn$_{0.13}$/GeSn DHS a promising candidate for next-generation electrically pumped GeSn lasers, potentially operable at higher temperatures. Our results provide a viable pathway for further advancements in various GeSn-based devices.

It is well established that the entanglement entropy of a critical system generally scales logarithmically with system size. Yet, in this work, we report a new class of non-Hermitian critical transitions that exhibit dramatic divergent dips in their entanglement entropy scaling, strongly violating conventional logarithmic behavior. Dubbed scaling-induced exceptional criticality (SIEC), it transcends existing non-Hermitian mechanisms such as exceptional bound states and non-Hermitian skin effect (NHSE)-induced gap closures, which are nevertheless still governed by logarithmic entanglement scaling. Key to SIEC is its strongly scale-dependent spectrum, where eigenbands exhibit an exceptional crossing only at a particular system size. As such, the critical behavior is dominated by how the generalized Brillouin zone (GBZ) sweeps through the exceptional crossing with increasing system size, and not just by the gap closure per se. We provide a general approach for constructing SIEC systems based on the non-local competition between heterogeneous NHSE pumping directions, and show how a scale-dependent GBZ can be analytically derived to excellent accuracy. Beyond 1D free fermions, SIEC is expected to occur more prevalently in higher-dimensional or even interacting systems, where antagonistic NHSE channels generically proliferate. SIEC-induced entanglement dips generalize straightforwardly to kinks in other entanglement measures such as Renyi entropy, and serve as spectacular demonstrations of how algebraic and geometric singularities in complex band structures manifest in quantum information.

The elasticity of rubbery polymer networks has been considered to be entropy-driven. On the other hand, studies on single polymer chain mechanics have revealed that the elasticity of ultimately stretched polymer chains is dominated by the energetic contribution mainly originating from chemical bond deformation. Here, we experimentally found that the elasticity of the double-network gel transits from the entropy-dominated one to the internal energy-driven one with its uniaxial deformation through the thermodynamic analysis. Based on this finding, we developed a simple mechanical model that takes into account the energetic contribution and found that this model approximately reproduces the temperature dependence of the stress-strain curve of the double-network gel. This study demonstrates the importance of the chemical perspective in the mechanical analysis of highly deformed rubbery polymer networks.

As a novel and promising 2D material, bismuth oxyselenide (Bi$_2$O$_2$Se) has demonstrated significant potential to overcome existing technical barriers in various electronic device applications, due to its unique physical properties like high symmetry, adjustable electronic structure, ultra-high electron mobility. However, the rapid growth of Bi$_2$O$_2$Se films down to a few atomic layers with precise control remains a significant challenge. In this work, the growth of two-dimensional (2D) Bi$_2$O$_2$Se thin films by the pulsed laser deposition (PLD) method is systematically investigated. By controlling temperature, oxygen pressure, laser energy density and laser emission frequency, we successfully prepare atomically thin and flat Bi$_2$O$_2$Se (001) thin films on the (001) surface of SrTiO3. Importantly, we provide a fundamental and unique perspective toward understanding the growth process of atomically thin and flat Bi$_2$O$_2$Se films, and the growth process can be primarily summarized into four steps: i) anisotropic non-spontaneous nucleation preferentially along the step roots; ii) monolayer Bi$_2$O$_2$Se nanosheets expanding across the surrounding area, and eventually covering the entire STO substrate step; iii) vertical growth of Bi$_2$O$_2$Se monolayer in a 2D Frank-van der Merwe (FM) epitaxial growth, and iv) with a layer-by-layer 2D FM growth mode, ultimately producing an atomically flat and epitaxially aligned thin film. Moreover, the combined results of the crystallinity quality, surface morphology and the chemical states manifest the successful PLD-growth of high-quality Bi$_2$O$_2$Se films in a controllable and fast mode.

Nanometric solid solution alloys are utilized in a broad range of fields, including catalysis, energy storage, medical application, and sensor technology. Unfortunately, the synthesis of these alloys becomes increasingly challenging as the disparity between the metal elements grows, due to differences in atomic sizes, melting points, and chemical affinities. This study utilized a data-driven approach incorporating sample balancing enhancement techniques and multilayer perceptron (MLP) algorithms to improve the model's ability to handle imbalanced data, significantly boosting the efficiency of experimental parameter optimization. Building on this enhanced data processing framework, we developed an entropy-engineered synthesis approach specifically designed to produce stable, nanometric copper and cobalt (CuCo) solid solution alloys. Under conditions of -0.425 V (vs. RHE), the CuCo alloy exhibited nearly 100% Faraday efficiency (FE) and a high ammonia production rate of 232.17 mg h-1 mg-1. Stability tests in a simulated industrial environment showed that the catalyst maintained over 80% FE and an ammonia production rate exceeding 170 mg h-1 mg-1 over a testing period of 120 hours, outperforming most reported catalysts. To delve deeper into the synergistic interaction mechanisms between Cu and Co, in situ Raman spectroscopy was utilized for realtime monitoring, and density functional theory (DFT) calculations further substantiated our findings. These results not only highlight the exceptional catalytic performance of the CuCo alloy but also reflect the effective electronic and energy interactions between the two metals.

Ultra-wide bandgap (UWBG) materials hold immense potential for high-power RF electronics and deep ultraviolet photonics. Among these, AlGaN emerges as a promising candidate, offering a tunable bandgap from 3.4 eV (GaN) to 6.1 eV (AlN) and remarkable material characteristics. However, achieving efficient p-type doping in high aluminum composition AlGaN remains a formidable challenge. This study presents an alternative approach to address this issue by fabricating a p+ Si/n-AlN/n+ AlGaN heterojunction structure by following the semiconductor grafting technique. Atomic force microscopy (AFM) analysis revealed that the AlN and the nanomembrane surface exhibited a smooth topography with a roughness of 1.96 nm and 0.545 nm, respectively. High-angle annular dark field scanning transmission electron microscopy (HAADF-STEM) confirmed a sharp and well-defined Si/AlN interface, with minimal defects and strong chemical bonding, crucial for efficient carrier transport. X-ray photoelectron spectroscopy (XPS) measurements demonstrated a type-I heterojunction with a valence band offset of 2.73 eV-2.84 eV and a conduction band offset of 2.22 eV -2.11 eV. The pn diode devices exhibited a linear current-voltage (I-V) characteristic, an ideality factor of 1.92, and a rectification ratio of 3.3E4, with a turn-on voltage of indicating effective p-n heterojunction. Temperature-dependent I-V measurements showed stable operation up to 90 C. The heterojunction's high-quality interface and electrical performance showcase its potential for advanced AlGaN-based optoelectronic and electronic devices.

The interplay between Floquet driving and non-Hermitian gain/loss could give rise to intriguing phenomena including topological funneling of light, edge-state delocalization, anomalous topological transitions and Floquet non-Hermitian skin effects. In this work, we uncover two unique phenomena in Floquet systems caused by gain and loss. First, multiple topological transitions from anomalous Floquet second-order topological insulators to anomalous Floquet first-order topological insulators and then to normal insulators can be induced by gain and loss. Interestingly, the resulting anomalous Floquet insulators further carry hybrid skin-topological boundary modes, which could either be fully localized or localized to different edges at different time slices and traversing along all edges in a single driving period. The topological phase transitions are also shown to be detectable through studies of transmission properties in the setting of coupled ring resonators. Second, gain and loss are found to induce singularities in the Floquet spectral, around which anomalous transmissions at flat quasienergy bands are predicted. These discoveries not only enhanced our understanding of topological matter and phase transitions in driven non-Hermitian systems, but also promoted their experimental realizations in optical and acoustic settings.

The short-wave infrared (SWIR) wavelength, especially 1.55 um, has attracted significant attention in various areas such as high-speed optical communication and LiDAR systems. Avalanche photodiodes (APDs) are a critical component as a receiver in these systems due to their internal gain which enhances the system performance. Silicon-based APDs are promising since they are CMOS compatible, but they are limited in detecting 1.55 um light detection. This study proposes a p-type Si on n-type GaAs0.51Sb0.49 (GaAsSb) lattice matched to InP substrates heterojunction formed using a grafting technique for future GaAsSb/Si APD technology. A p+Si nanomembrane is transferred onto the GaAsSb/AlInAs/InP substrate, with an ultrathin ALD-Al2O3 oxide at the interface, which behaves as both double-side passivation and quantum tunneling layers. The devices exhibit excellent surface morphology and interface quality, confirmed by atomic force microscope (AFM) and transmission electron microscope (TEM). Also, the current-voltage (I-V) of the p+Si/n-GaAsSb heterojunction shows ideal rectifying characteristics with an ideality factor of 1.15. The I-V tests across multiple devices confirm high consistency and yield. Furthermore, the X-ray photoelectron spectroscopy (XPS) measurement reveals that GaAsSb and Si are found to have type-II band alignment with a conduction band offset of 50 meV which is favorable for the high-bandwidth APD application. The demonstration of the GaAsSb/Si heterojunction highlights the potential to advance current SWIR PD technologies.

Due to their analytical tractability, random matrix ensembles serve as robust platforms for exploring exotic phenomena in systems that are computationally demanding. Building on a companion letter [arXiv:2312.17481], this paper investigates two random matrix ensembles tailored to capture the critical behavior of the Anderson transition in infinite dimension, employing both analytical techniques and extensive numerical simulations. Our study unveils two types of critical behaviors: logarithmic multifractality and critical localization. In contrast to conventional multifractality, the novel logarithmic multifractality features eigenstate moments scaling algebraically with the logarithm of the system size. Critical localization, characterized by eigenstate moments of order $q>1/2$ converging to a finite value indicating localization, exhibits characteristic logarithmic finite-size or time effects, consistent with the critical behavior observed in random regular and Erdös-Rényi graphs of effective infinite dimensionality. Using perturbative methods, we establish the existence of logarithmic multifractality and critical localization in our models. Furthermore, we explore the emergence of novel scaling behaviors in the time dynamics and spatial correlation functions. Our models provide a valuable framework for studying infinite-dimensional quantum disordered systems, and the universality of our findings enables broad applicability to systems with pronounced finite-size effects and slow dynamics, including the contentious many-body localization transition, akin to the Anderson transition in infinite dimension.

In this note, we study the effect of viscosity gradients on the energy dissipated by the motion of microswimmers and the associated efficiency of that motion. Using spheroidal squirmer model swimmers in weak linearly varying viscosity fields, we find that efficiency depends on whether they generate propulsion from the back (pushers) or the front (pullers). Pushers are faster and more efficient when moving down gradients but slower and less efficient moving up viscosity gradients, and the opposite is true for pullers. However, both pushers and pullers display negative viscotaxis, therefore pushers dynamically tend to the most efficient orientation while pullers the least. We also evaluate the effect of shape on power expenditure and efficiency when swimming in viscosity gradients and find that in general the change in both due to gradients monotonically decreases with increasing slenderness. This work shows how shape and gait play an important role in determining dynamics and efficiency in inhomogeneous environments, and demonstrating that both efficiency minimizing and maximizing stable dynamical states are possible.

The concepts of topology and geometry are of critical importance in exploring exotic phases of quantum matter. Though they have been investigated on various experimental platforms, to date a direct probe of topological and geometric properties on a universal quantum computer even for a minimum model is still in vain. In this work, we first show that a density matrix form of the quantum geometric tensor (QGT) can be explicitly re-constructed from Pauli operator measurements on a quantum circuit. We then propose two algorithms, suitable for IBM quantum computers, to directly probe QGT. The first algorithm is a variational quantum algorithm particularly suitable for Noisy Intermediate-Scale Quantum (NISQ)-era devices, whereas the second one is a pure quantum algorithm based on quantum imaginary time evolution. Explicit results obtained from IBM Q simulating a Chern insulator model are presented and analysed. Our results indicate that transmon qubit-based universal quantum computers have the potential to directly simulate and investigate topological and geometric properties of a quantum system.

Precisely measuring pressure in microfluidic flows is essential for flow control, fluid characterization, and monitoring, but faces specific challenges such as \REachieving sufficient resolution, non-invasiveness, or ease of use. Here, we demonstrate a fully integrated multiplexed optofluidic pressure sensor, entirely decoupled from the flow path, that enables local pressure measurements along any microfluidic channel without altering its flow geometry. The sensor itself relies on the compression of a soft mechano-actuated hydrogel, changing color in response to a pressure change. The hydrogel is separated from the fluid circulating in the channel by a thin membrane, allowing for the unrestricted use of different types of fluids. Imaging the gel through the transparent PDMS with a color camera provides a direct, easy, and contact-free determination of the fluid pressure at the sensing location for pressures as small as \SI20\milli\bar with a resolution of around \SI10\milli\bar. The sensitivity and accessible pressure range can be tuned via the mechanical properties \REof the sensing unit. The photonic gel can also be used to acquire 2D pressure or deformation maps, taking advantage of the fast response time and fine spatial resolution.

This work reports the spontaneous emergence of a photon current in a class of spin-cavity systems, where an assemble of quantum emitters interact with distinct photon modes confined in tunneling-coupled cavities. Specifically, with necessary symmetry breaking, photons in a superradiant phase afforded by coherent photon-emitter interaction spontaneously flow from a cavity with a lower resonance frequency to a different cavity with a higher resonance frequency. Theoretical analysis reveals that cavity dissipation is the key to alter spin-cavity coherence, which then makes it possible to extract photons from, and later return photons to the vaccum through the cavities. The interplay between photon loss and emitter coherence hence sustains a counter-intuitive steady current of photons between cavities without an external pumping field.

Beta-phase gallium oxide ($\beta$-Ga$_2$O$_3$) research has gained accelerated pace due to its superiorly large bandgap and commercial availability of large-diameter native substrates. However, the high acceptor activation energy obstructs the development of homojunction bipolar devices employing $\beta$-Ga$_2$O$_3$. The recently demonstrated semiconductor grafting technique provides an alternative and viable approach towards lattice-mismatched $\beta$-Ga$_2$O$_3$-based p-n heterojunctions with high quality interfaces. Understanding and quantitatively characterizing the band alignment of the grafted heterojunctions is crucial for future bipolar device development employing the grafting method. In this work, we present a systematic study of the band alignment in the grafted monocrystalline Si/$\beta$-Ga$_2$O$_3$ heterostructure by employing X-ray photoelectron spectroscopy (XPS). The core level peaks and valence band spectra of the Si, $\beta$-Ga$_2$O$_3$, and the grafted heterojunction were carefully obtained and analyzed. The band diagrams of the Si/$\beta$-Ga$_2$O$_3$ heterostructure were constructed using two individual methods, the core level peak method and the valence band spectrum method, by utilizing the different portions of the measured data. The reconstructed band alignments of the Si/$\beta$-Ga$_2$O$_3$ heterostructure using the two different methods are identical within the error range. The band alignment is also consistent with the prediction from the electron affinity values of Si and $\beta$-Ga$_2$O$_3$. The study suggests that the interface defect density in grafted Si/$\beta$-Ga$_2$O$_3$ heterostructure is at a sufficiently low level such that Fermi level pinning at the interface has been completely avoided and the universal electron affinity rule can be safely employed to construct the band diagrams of grafted monocrystalline Si/$\beta$-Ga$_2$O$_3$ heterostructures.

Recently, the real topology has been attracting widespread interest in two dimensions (2D). Here, based on first-principles calculations and theoretical analysis, we reveal the monolayer Cr$_2$Se$_2$O (ML-CrSeO) as the first material example of a 2D antiferromagnetic (AFM) real Chern insulator (RCI) with topologically protected corner states. Unlike previous RCIs, we find that the real topology of the ML-CrSeO is rooted in one certain mirror subsystem of the two spin channels, and can not be directly obtained from all the valence bands in each spin channel as commonly believed. In particular, due to antiferromagnetism, the corner modes in ML-CrSeO exhibit strong corner-contrasted spin polarization, leading to spin-corner coupling (SCC). This SCC enables a direct connection between spin space and real space. Consequently, large and switchable net magnetization can be induced in the ML-CrSeO nanodisk by electrostatic means, such as potential step and in-plane electric field, and the corresponding magnetoelectric responses behave like a sign function, distinguished from that of the conventional multiferroic materials. Our work considerably broadens the candidate range of RCI materials, and opens up a new direction for topo-spintronics and 2D AFM materials research.

In this paper, we explore the hydrodynamics of spheroidal active particles in viscosity gradients. This work provides a more accurate modeling approach, in comparison to spherical particles, for anisotropic organisms like Paramecium swimming through inhomogeneous environments, but more fundamentally examines the influence of particle shape on viscotaxis. We find that spheroidal squirmers generally exhibit dynamics consistent with their spherical analogs, irrespective of the classification of swimmers as pushers, pullers, or neutral swimmers. However, the slenderness of the spheroids tends to reduce the impact of viscosity gradients on their dynamics; when swimmers become more slender, the viscosity difference across their body is reduced, which leads to slower reorientation. We also derive the mobility tensor for passive spheroids in viscosity gradients generalizing previous results for spheres and slender bodies. This work enhances our understanding of how shape factors into the dynamics of passive and active particles in viscosity gradients, and offers new perspectives that could aid the control of both natural and synthetic swimmers in complex fluid environments.

In this work, we report the fabrication and characterizations of a monocrystalline GaAs/$\beta$-Ga$_2$O$_3$ p-n heterojunction by employing semiconductor grafting technology. The heterojunction was created by lifting off and transfer printing a p-type GaAs single crystal nanomembrane to an Al$_2$O$_3$-coated n-type$\beta$-Ga$_2$O$_3$ epitaxial substrate. The resultant heterojunction diodes exhibit remarkable performance metrics, including an ideality factor of 1.23, a high rectification ratio of 8.04E9 at +/- 4V, and a turn on voltage of 2.35 V. Furthermore, at +5 V, the diode displays a large current density of 2500 A/cm$^2$ along with a low ON resistance of 2 m$\Omega\cdot$cm$^2$.

Crystalline CaF2 is drawing huge attentions due to its great potential of being the gate dielectric of two-dimensional (2D) material MOSFETs. It is deemed to be much superior than boron nitride and traditional SiO2 because of its larger dielectric constant, wider band gap, and lower defect density. Nevertheless, the CaF2-based MOSFETs fabricated in experiment still present notable reliability issues, and the underlying reason remains unclear. Here we studied the various intrinsic defects and adsorbates in CaF2/MoS2 and CaF2/MoSi2N4 interface systems to reveal the most active charge trapping centers in CaF2-based 2D material MOSFETs. An elaborate Table that comparing the importance of different defects in both n-type and p-type device is provided. Most impressively, the oxygen molecules adsorbed at the interface or surface, which are inevitable in experiments, are as active as the intrinsic defects in channel materials, and they can even change the MoSi2N4 to p-type spontaneously. These results mean that it is necessary to develop high vacuum packaging process as well as preparing high-quality 2D materials for better device performance.

Cracks in soft materials exhibit diverse dynamic patterns, involving straight, oscillation, branching, and supershear fracture. Here, we successfully reproduce these crack morphologies in a two-dimensional pre-strained fracture scenario and establish crack stability phase diagrams for three distinct nonlinear materials using a fracture phase field model. The contrasting phase diagrams highlight the crucial role of nonlinearity in regulating crack dynamics. In strain-softening materials, crack branching prevails, limiting the cracks to sub-Rayleigh states. Yet strain-stiffening stabilizes crack propagation, allowing for the presence of supershear fracture. Of particular interest is the large-strain linear elastic materials, where crack oscillation is readily triggered. The onset speed of such instability scales linearly with the characteristic wave speed near the crack tip, supporting the notion that such crack oscillations are a universal instability closely tied to the wave speed. The oscillation wavelength is shown to be a bilinear function of the nonlinear scale and crack driving force, with a minimum length scale associated with the dissipative zone. Moreover, our findings suggest that the increase in characteristic wave speed due to strain-stiffening can account for the observed transition of cracks from sub-Rayleigh to supershear regimes.

Beta phase gallium oxides, an ultrawide-bandgap semiconductor, has great potential for future power and RF electronics applications but faces challenges in bipolar device applications due to the lack of p-type dopants. In this work, we demonstrate monocrystalline AlGaAs_GaAsP_beta phase gallium oxides n-p-n double-heterojunctions, synthesized using semiconductor grafting technology. By transfer printing an n-AlGaAs_p-GaAsP nanomembrane to the n-beta phase-Ga$_2$O$_3$ epitaxial substrate, we simultaneously achieved AlGaAs_GaAsP epitaxial n-p junction diode with an ideality factor of 1.29 and a rectification ratio of 2.57E3 at +/- 2 V, and grafted GaAsP_beta_phase_gallium oxides p-n junction diode exhibiting an ideality factor of 1.36 and a rectification ratio of 4.85E2 at +/- 2 V.

Exotic quantum states arise from the interplay of various degrees of freedom such as charge, spin, orbital, and lattice. Recently, a novel short-ranged charge order (CO) was discovered deep inside the antiferromagnetic phase of Kagome magnet FeGe, exhibiting close relationships with magnetism. Despite extensive investigations, the CO mechanism remains controversial, mainly because the short-ranged behavior hinders precise identification of CO superstructure. Here, combining multiple experimental techniques, we report the observation of a long-ranged CO in high-quality FeGe samples, which is accompanied with a first-order structural transition. With these high-quality samples, the distorted 2 * 2 * 2 CO superstructure is characterized by a strong dimerization along the c-axis of 1/4 of Ge1-sites in Fe3Ge layers, and in response to that, the 2 * 2 in-plane charge modulations are induced. Moreover, we show that the previously reported short-ranged CO might be related to large occupational disorders at Ge1-site, which upsets the equilibrium of the CO state and the ideal 1 * 1 * 1 structure with very close energies, inducing nanoscale coexistence of these two phases.Our study provides crucial clues for further understanding the CO properties in FeGe and helps to identify the CO mechanism.

We identify the key features of Kardar-Parisi-Zhang universality class in the fluctuations of the wave density logarithm, in a two-dimensional Anderson localized wave packet. In our numerical analysis, the fluctuations are found to exhibit an algebraic scaling with distance characterized by an exponent of $1/3$, and a Tracy-Widom probability distribution of the fluctuations. Additionally, within a directed polymer picture of KPZ physics, we identify the dominant contribution of a directed path to the wave packet density and find that its transverse fluctuations are characterized by a roughness exponent $2/3$. Leveraging on this connection with KPZ physics, we verify that an Anderson localized wave packet in 2D exhibits a stretched-exponential correction to its well-known exponential localization.

The beta-Ga2O3 has exceptional electronic properties with vast potential in power and RF electronics. Despite the excellent demonstrations of high-performance unipolar devices, the lack of p-type doping in beta-Ga2O3 has hindered the development of Ga2O3-based bipolar devices. The approach of p-n diodes formed by polycrystalline p-type oxides with n-type beta-Ga2O3 can face severe challenges in further advancing the beta-Ga2O3 bipolar devices due to their unfavorable band alignment and the poor p-type oxide crystal quality. In this work, we applied the semiconductor grafting approach to fabricate monocrystalline Si/beta-Ga2O3 p-n diodes for the first time. With enhanced concentration of oxygen atoms at the interface of Si/beta-Ga2O3, double side surface passivation was achieved for both Si and beta-Ga2O3 with an interface Dit value of 1-3 x 1012 /cm2 eV. A Si/beta-Ga2O3 p-n diode array with high fabrication yield was demonstrated along with a diode rectification of 1.3 x 107 at +/- 2 V, a diode ideality factor of 1.13 and avalanche reverse breakdown characteristics. The diodes C-V shows frequency dispersion-free characteristics from 10 kHz to 2 MHz. Our work has set the foundation toward future development of beta-Ga2O3-based transistors.

Quantum thermodynamic quantities, normally formulated with the assumption of weak system-bath coupling (SBC), can often be contested in physical circumstances with strong SBC. This work presents an alternative treatment that enables us to use standard concepts based on weak SBC to tackle with quantum thermodynamics with strong SBC. Specifically, via a physics-motivated mapping between strong and weak SBC, we show that it is possible to identify thermodynamic quantities with arbitrary SBC, including work and heat that shed light on the first law of thermodynamics with strong SBC. Quantum fluctuation theorems, such as the Tasaki-Crooks relation and the Jarzynski equality are also shown to be extendable to strong SBC cases. Our theoretical results are further illustrated with a working example.

When the spin-orbit coupling (SOC) is absent, almost all the proposed half-metals with the twofold degenerate nodal points at the K (or K') in two-dimensional (2D) materials are misclassified as "Dirac half-metals" owing to the way graphene was utilized in the earliest studies. Actually, each band crossing point at K or K' is described by a 2D Weyl Hamiltonian with definite chirality; hence, it must be a Weyl point. To the best of our knowledge, there have been no reports of a genuine (i.e., fourfold degenerate) Dirac point half-metal in 2D yet. In this Letter, we proposed for the first time that the 2D d0-type ferromagnet Mg4N4 is a genuine Dirac half-metal with a fourfold degenerate Dirac point at the S high-symmetry point, intrinsic magnetism, high Curie temperature, 100% spin-polarization, robustness to the SOC and uniaxial and biaxial strains, and 100% spin-polarized edge states. The work can be seen as a starting point for future predictions of intrinsically magnetic materials with genuine Dirac points, which will aid the frontier of topo-spintronics researchers.

Useful in the enhancement of light-matter interaction, localization of light is at the heart of photonics studies. Different approaches have been proposed to localize light, including those based on dynamical localization, topological trivial or nontrivial defects in the band gap of photonic crystals, and bound states in the continuum. Recent studies on non-Hermitian skin effect have provided us new means to localize waves. In this work, we propose a new method towards localized light, called photonic corner skin modes arising from second-order non-Hermitian skin effect and gain-loss symmetry on a lattice. Specifically, we propose to make use of small pseudo-inversion symmetric gain/loss, which does not close the band gap, to realize a photonic Chern insulator with chiral edge states. The chiral edge states then accumulate at certain corners of the system. Intriguing phenomena such as corner skin modes arising from an underlying bipolar second-order non-Hermitian skin effect and multiple-corner skin modes are predicted in continuous systems.

Topological states of matter and their corresponding properties are classical research topics in condensed matter physics. Quite recently, the application of materials that feature these states has been extended to the field of electrochemical catalysis and become an emerging research topic that is receiving increasing interest. In particular, several recent experimental studies performed on topological semimetals have already revealed high catalytic performance towards hydrogen evolution reaction (HER), strongly promoting acceptance of the fresh concept of the topological catalyst. This emerging concept has experienced rapid developments in the last few years, but these developments have been rarely summarized. Herein, we offer a comprehensive review on the state-of-the-art progress in developing topological catalysts for the HER process through topological semimetals such as Weyl semimetals, Dirac semimetals, nodal line semimetals, etc. The course of development, the general research routes, and the fundamental mechanisms in topological catalysts are also systematically analyzed in this review.

Phonons are an ideal platform for realizing stable spinless two-dimensional (2D) Dirac points because they have a bosonic nature and hard-to-break time-reversal symmetry. It should be noted that the twofold degenerate nodal points in the phonon dispersions of almost all reported 2D materials are misclassified as 'Dirac points' owing to a historical issue. The correct name for these twofold degenerate nodal points should be 'Weyl' because 2D phononic systems are essentially spinless and because each twofold degenerate point is described by a Weyl model in two dimensions. To date, there have been no reports of fourfold degenerate Dirac point phonons in 2D materials. In this study, we searched through the entire 80 layer groups (LGs) and discovered that Dirac phonons can be realized in 7 of the 80 LGs. Moreover, the Dirac points in the phonon dispersions of 2D materials can be divided into essential and accidental degenerate points, which appear at high-symmetry points and on high-symmetry lines, respectively. Guided by symmetry analysis, we identified the presence of Dirac phonons in several 2D material candidates with six LGs. This letter offers a method for identifying Dirac phonons in 2D and proposes 2D material candidates for realizing Dirac phonons.

Feature extraction and a neural network model are applied to predict the defect types and concentrations in experimental TiO$_2$ samples. A dataset of TiO$_2$ structures with vacancies and interstitials of oxygen and titanium is built and the structures are relaxed using energy minimization. The features of the calculated pair distribution functions (PDFs) of these defected structures are extracted using linear methods (principal component analysis, non-negative matrix factorization) and non-linear methods (autoencoder, convolutional neural network). The extracted features are used as the inputs to a neural network that maps the feature weights to the concentration of each defect type. The performance of this machine learning pipeline is validated by predicting the defect concentrations based on experimentally-measured TiO$_2$ PDFs and comparing the results to brute-force predictions. A physics-based initialization of the autoencoder has the highest accuracy in predicting the defect concentrations. This model incorporates physical interpretability and predictability of material properties, enabling a more efficient material characterization process with scattering data.

A workflow is presented for performing pair distribution function (PDF) analysis of defected materials using structures generated from atomistic simulations. A large collection of structures, which differ in the types and concentrations of defects present, are obtained through energy minimization with an empirical interatomic potential. Each of the structures is refined against an experimental PDF. The structures with the lowest goodness of fit $R_w$ values are taken as being representative of the experimental structure. The workflow is applied to anatase titanium dioxide ($a$-TiO$_2$) and tetragonal zirconium dioxide ($t$-ZrO$_2$) synthesized in the presence of microwave radiation, a low temperature process that generates disorder. The results suggest that titanium vacancies and interstitials are the dominant defects in $a$-TiO$_2$, while oxygen vacancies dominate in $t$-ZrO$_2$. Analysis of the atomic displacement parameters extracted from the PDF refinement and mean squared displacements calculated from molecular dynamics simulations indicate that while these two quantities are closely related, it is challenging to make quantitative comparisons between them. The workflow can be applied to other materials systems, including nanoparticles.

With the objective to understand microscopic principles governing thermal energy flow in nanojunctions, we study phononic heat transport through metal-molecule-metal junctions using classical molecular dynamics (MD) simulations. Considering a single-molecule gold-alkanedithiol-gold junction, we first focus on aspects of method development and compare two techniques for calculating thermal conductance: (i) The Reverse Nonequilibrium MD (RNEMD) method, where heat is inputted and extracted at a constant rate from opposite metals. In this case, the thermal conductance is calculated from the nonequilibrium temperature profile that is created on the junction. (ii) The Approach-to-Equilibrium MD (AEMD) method, with the thermal conductance of the junction obtained from the equilibration dynamics of the metals. In both methods, simulations of alkane chains of growing size display an approximate length-independence of the thermal conductance, with calculated values matching computational and experimental studies. The RNEMD and AEMD methods offer different insights on thermal transport, and we discuss their relative benefits and shortcomings. Assessing the potential application of molecular junctions as thermal diodes, the alkane junctions are made spatially asymmetric by modifying their contact regions with the bulk, either by using distinct endgroups or by replacing one of the Au contacts by Ag. Anharmonicity is built into the system within the molecular force-field. Using the RNEMD method, we show that, while the temperature profile strongly varies (compared to the gold-alkanedithiol-gold junctions) due to these structural modifications, the thermal diode effect is inconsequential in these systems -- unless one goes to very large thermal biases. This finding suggests that one should seek molecules with considerable internal anharmonic effects for developing nonlinear thermal devices.

Active particles (living or synthetic) often move through inhomogeneous environments, such as gradients in light, heat or nutrient concentration, that can lead to directed motion (or taxis). Recent research has explored inhomogeneity in the rheological properties of a suspending fluid, in particular viscosity, as a mechanical (rather than biological) mechanism for taxis. Theoretical and experimental studies have shown that gradients in viscosity can lead to reorientation due to asymmetric viscous forces. In particular, recent experiments with Chlamydomonas reinhardtii algae swimming across sharp viscosity gradients have observed that the microorganisms are redirected and scattered due to the viscosity change. Here we develop a simple theoretical model to explain these experiments. We model the swimmers as spherical squirmers and focus on small, but sharp, viscosity changes. We derive a law, analogous to Snell's law of refraction, that governs the orientation of active particles in the presence of a viscosity interface. Theoretical predictions show good agreement with experiments and provide a mechanistic understanding of the observed reorientation process.

This work provides a convenient and powerful means towards the engineering of Floquet bands via Bloch oscillations, by adding a tilted linear potential to periodically driven lattice systems. The added linear field not only restricts the spreading of a time-evolving wavepacket but also, depending on the ratio between the Bloch oscillation frequency and the modulation frequency of the periodic driving, dramatically modifies the band profile and topology. Specifically, we consider a driven Aubry-André-Harper model as a working example, in the presence of a linear field. Almost flat Floquet bands or Floquet bands with large Chern numbers due to the interplay between the periodic driving and Bloch oscillations can be obtained, with the band structure and topology extensively tunable by adjusting the ratio of two competing frequencies. To confirm our finding, we further execute the Thouless pumping of one and two interacting bosons in such a lattice system and establish its connection with the topological properties of single- and two-particle Floquet bands.

Topological phases of matter have remained an active area of research in the last few decades. Periodic driving is known to be a powerful tool for enriching such exotic phases, which leads to various phenomena with no static analogs. One such phenomenon is the emergence of the elusive $pi/2$ modes, i.e., a type of topological boundary state pinned at a quarter of the driving frequency. The latter may lead to the formation of Floquet parafermions in the presence of interaction, which is known to support more computational power than Majorana particles. In this work, we experimentally verify the signature of $\pi/2$ modes in an acoustic waveguide array, which is designed to simulate a square-root periodically driven Su-Schrieffer-Heeger model. This is accomplished by confirming the $4T$-periodicity ($T$ being the driving period) profile of an initial-boundary excitation, which we also show theoretically to be the smoking gun evidence of $\pi/2$ modes. Our findings are expected to motivate further studies of $\pi/2$ modes in quantum systems for potential technological applications.

We show that superfluidity can be used to prevent thermalisation in a nonlinear Floquet system. Generically, periodic driving boils an interacting system to a featureless infinite temperature state. Fast driving is a known strategy to postpone Floquet heating with a large but always finite boiling time. In contrast, using a nonlinear periodically-driven system on a lattice, we show the existence of a continuous class of initial states which do not thermalise at all. This absence of thermalisation is associated to the existence and persistence of a stable superflow motion.

The dynamics of solitons driven in a nonlinear Thouless pump and its connection with the system's topology were recently explored for both weak and strong nonlinear strength. This work uncovers the fate of nonlinear Thouless pumping in the regime of intermediate nonlinearity, thus establishing a fascinating crossover from the observation of nonzero and quantized pumping at weak nonlinearity to zero pumping at strong nonlinearity. We identify the presence of critical nonlinearity strength at which quantized pumping of solitons breaks down regardless of the protocol time scale. Such an obstruction to pumping quantization is attributed to the presence of loop structures of nonlinear topological bands. Our results not only unveil a missing piece of physics in nonlinear Thouless pumping, but also provide a means to detect loop structures of nonlinear systems investigated in real space.

In this work we explore the effects of nonlinearity on three-dimensional topological phases. Of particular interest are the so-called Weyl semimetals, known for their Weyl nodes, i.e., point-like topological charges which always exist in pairs and demonstrate remarkable robustness against general perturbations. It is found that the presence of onsite nonlinearity causes each of these Weyl nodes to break down into nodal lines and nodal surfaces at two different energies while preserving its topological charge. Depending on the system considered, additional nodal lines may further emerge at high nonlinearity strength. We propose two different ways to probe the observed nodal structures. First, the use of an adiabatic pumping process allows the detection of the nodal lines and surfaces arising from the original Weyl nodes. Second, an Aharonov-Bohm interference experiment is particularly fruitful to capture additional nodal lines that emerge at high nonlinearity.

An active system consisting of many self-spinning dimers is simulated, and a distinct local rotational jamming transition is observed as the density increases. In the low density regime, the system stays in an absorbing state, in which each dimer rotates independently subject to the applied torque. While in the high density regime, a fraction of the dimers become rotationally jammed into local clusters, and the system exhibits spinodal-decomposition like two-phase morphologies. For high enough densities, the system becomes completely jammed in both rotational and translational degrees of freedom. Such a simple system is found to exhibit rich and multiscale disordered hyperuniformities among the above phases: the absorbing state shows a critical hyperuniformity of the strongest class and subcritically preserves the vanishing density-fluctuation scaling up to some length scale; the locally-jammed state shows a two-phase hyperuniformity conversely beyond some length scale with respect to the phase cluster sizes; the totally jammed state appears to be a monomer crystal, but intrinsically loses large-scale hyperuniformity. These results are inspiring for designing novel phase-separation and disordered hyperuniform systems through dynamical organization.

As one of the central topics in quantum optics, collective spontaneous emission such as superradiance has been realized in a variety of systems. This work proposes an innovative scheme to coherently control collective emission rates via a self-interference mechanism in a nonlinear waveguide setting. The self-interference is made possible by photon backward scattering incurred by quantum scatterers in a waveguide working as quantum switches. Whether the interference is constructive or destructive is found to depend strongly on the distance between the scatterers and the emitters. The interference between two propagation pathways of the same photon leads to controllable superradiance and subradiance, with their collective decay rates much enhanced or suppressed (also leading to hyperradiance or population trapping). Furthermore, the self-interference mechanism is manifested by an abrupt change in the emission rates in real time. An experimental setup based on superconducting transmission line resonators and transmon qubits is further proposed to realize controllable collective emission rates.

We present a study on the magnetization, anomalous Hall effect (AHE) and novel longitudinal resistivity in layered antiferromagnet Co$_{0.29}$TaS$_{2}$. Of particular interests in Co$_{0.29}$TaS$_{2}$ are abundant magnetic transitions, which show that the magnetic structures are tuned by temperature or magnetic field. With decreasing temperature, Co$_{0.29}$TaS$_{2}$ undergoes two transitions at T$_{t1}\sim$ 38.3 K and T$_{t2}\sim$ 24.3 K. Once the magnetic field is applied, another transition T$_{t3}\sim$ 34.3 K appears between 0.3 T and 5 T. At 2 K, an obvious ferromagnetic hysteresis loop within H$_{t1}\sim\pm$ 6.9 T is observed, which decreases with increasing temperature and eventually disappears at T$_{t2}$. Besides, Co$_{0.29}$TaS$_{2}$ displays step-like behavior as another magnetic transition around H$_{t2}\sim\pm$ 4 T, which exists until $\sim$ T$_{t1}$. These characteristic temperatures and magnetic fields mark complex magnetic phase transitions in Co$_{0.29}$TaS$_{2}$, which are also evidenced in transport results. Large AHE dominates in the Hall resistivity with the conspicuous value of R$_{s}$/R$_{0}\sim 10^{5}$, considering that the tiny net magnetization (0.0094$\mu_{B}$/Co) alone would not lead to this value, thus the contribution of Berry curvature is necessary. The longitudinal resistivity illustrates a prominent irreversible behavior within H$_{t1}$. The abrupt change at H$_{t2}$ below T$_{t1}$, corresponding to the step-like magnetic transitions, is also observed. Synergy between the magnetism and topological properties, both playing a crucial role, may be the key factor of large AHE in antiferromagnet, which also offers a new perspective in magnetic topological materials with the platform of Co$_{0.29}$TaS$_{2}$.

We perform a detailed analysis of the magnetotransport and de Haas-van Alphen (dHvA) oscillations in crystal PdGa which is predicted to be a typical chiral Fermion semimetal from CoSi family holding a large Chern number. The unsaturated quadratic magnetoresistance (MR) and nonlinear Hall resistivity indicate that PdGa is a multi-band system without electron-hole compensation. Angle-dependent resistivity in PdGa shows weak anisotropy with twofold or threefold symmetry when the magnetic field rotates within the (1$\bar{1}$0) or (111) plane perpendicular to the current. Nine or three frequencies are extracted after the fast Fourier-transform analysis (FFT) of the dHvA oscillations with B//[001] or B//[011], respectively, which is confirmed to be consistent with the Fermi surfaces (FSs) obtained from first-principles calculations with spin-orbit coupling (SOC) considered.

High-Curie-temperature ferromagnets are promising candidates for designing new spintronic devices. Here we have successfully synthesized a single-crystal sample of the itinerant ferromagnet Mn$ _{5}$Ge$_{3}$ used flux method and its critical properties were investigated by means of bulk dc-magnetization at the boundary between the ferromagnetic (FM) and paramagnetic (PM) phase. Critical exponents $ \beta=0.336 \pm 0.001 $ with a critical temperature $ T_{c}=300.29 \pm 0.01 $ K and $ \gamma=1.193 \pm 0.003 $ with $ T_{c} = 300.15 \pm 0.05 $ K are obtained by the modified Arrott plot, whereas $ \delta = 4.61 \pm 0.03 $ is deduced by a critical isotherm analysis at $ T_{c} = 300 $ K. The self-consistency and reliability of these critical exponents are verified by the Widom scaling law and the scaling equations. Further analysis reveals that the spin coupling in Mn$ _{5}$Ge$_{3}$ exhibits three-dimensional Ising-like behavior. The magnetic exchange is found to decay as $ J(r)\approx r^{-4.855} $ and the spin interactions are extended beyond the nearest neighbors, which may be related to different set of Mn--Mn interactions with unequal magnitude of exchange strengths. Additionally, the existence of noncollinear spin configurations in Mn$ _{5} $Ge$ _{3} $ results in a small deviation of obtained critical exponents from those for standard 3D-Ising model.

Absolute negative mobility (ANM) in nonequilibrium systems depicts the possibility of particles propagating toward the opposite direction of an external force. We uncover in this work a phenomenon analogous to ANM regarding eigenstate localization and particle transport in non-Hermitian systems under the influence of the non-Hermitian skin effect (NHSE). A coherent coupling between two non-Hermitian chains individually possessing the same preferred direction of NHSE is shown to cause a direction reversal of NHSE for all eigenmodes. This concept is further investigated in terms of time evolution dynamics using a non-Hermitian quantum walk platform within reach of current experiments. Our findings are explained both qualitatively and quantitatively. The possible direction reversal of NHSE can potentially lead to interesting applications.

Studies of topological bands and their associated low-dimensional boundary modes have largely focused on linear systems. This work reports robust dynamical features of three-dimensional (3D) nonlinear systems in connection with intriguing topological bands in 3D. Specifically, for a 3D setting of coupled rock-paper-scissors cycles governed by the antisymmetric Lotka-Volterra equation (ALVE) that is inherently nonlinear, we unveil distinct characteristics and robustness of surface polarized masses and analyze them in connection with the dynamics and topological bands of the linearized Lotka-Volterra (LV) equation. Our analysis indicated that insights learned from Weyl semimetal phases with type-I and type-II Weyl singularities based on a linearized version of the ALVE are still remarkably useful, even though the system dynamics is far beyond the linear regime. This work indicates the relevance and importance of the concept of topological boundary modes in analyzing high-dimensional nonlinear systems and hopes to stimulate another wave of topological studies in nonlinear systems.

Non-Hermitian skin effect (NHSE) in non-Hermitian lattice systems, associated with a point gap on the complex energy plane, has attracted great theoretical and experimental interest. Much less is studied on the so-called second-order non-Hermitian skin effect, where the bulk does not support a point gap but localization at the corner still occurs. This work discovers a class of hybrid skin-topological modes as the second-order non-Hermitian skin effect without asymmetric couplings. Specifically, by only adding gain/loss to two-dimensional Chern insulators and so long as the gain/loss strength does not close the line gap, all the topological edge states are localized at one corner under the open boundary condition, with the bulk states extended. The resultant non-Hermitian Chern bands can be still topologically characterized by Chern numbers, whereas the hybrid skin-topological modes are understood via some auxiliary Hermitian systems that belong to either intrinsic or extrinsic second-order topological insulator phases. By proposing an innovative construction of auxiliary Hamiltonian, our generic route to hybrid skin-topological modes is further successfully extended to nonequilibrium topological systems with gain and loss, where the anomalous Floquet band topology is no longer captured by band Chern numbers. The extension thus leads to the intriguing finding of nonequilibrium hybrid skin-topological modes. In addition to offering a straightforward route to experimental realization of hybrid topological-skin effects, this study also opens up a promising perspective for the understanding of corner localization by revealing the synergy of three important concepts, namely, non-Hermitian topological insulator, second-order non-Hermitian skin effect, and second-order topological insulator.

Two-dimensional (2D) laser arrays are shown to be achievable at a large scale by exploiting the interplay of higher-order topological insulator (HOTI) physics and the so-called non-Hermitian skin effect (NHSE). The higher-order topology allows for the amplification and hence lasing of a single-mode protected by a band gap; whereas the NHSE, widely known to accumulate population in a biased direction in non-Hermitian systems, is introduced to compete with the topological localization of corner modes. By tuning the system parameters appropriately and pumping at one site only, a single topologically protected lasing mode delocalized across over two dimensions emerges, with its power widely tunable by adjusting the pump strength. Computational studies clearly indicate that the lasing mode thus engineered is stable, and the phase difference between nearest lasing sites is locked at zero, even after the disorder is accounted for. The total power of the lasing mode forming a 2D topological laser array is proportional to the area of the 2D lattice accommodating a HOTI phase. Based on existing experiments, we further propose to use coupled optical ring resonators as a promising platform to realize large-scale 2D laser arrays.

Quantized response is one distinguishing feature of a topological system. In non-Hermitian systems, the spectral winding topology yields quantized steady-state response. By considering two weakly coupled non-Hermitian chains, we discover that the spectral winding topology of one chain can be probed by a steady-state response defined solely on the other chain, even when other important properties, e.g., energetics and entanglement entropy, indicate that eigen-solutions are effectively not hybridized between the two chains. This intriguing phenomenon, as carefully investigated in a large parameter space with a varying system size, not only offers a new angle to understand interchain signal propagation in a non-Hermitian setting but also reveals unexpected physics of spectral winding topology vs quantized response.

In this work, we explore interesting consequences arising from the coupling between a clean non-Hermitian chain with skin localization and a delocalized chain of the same length under various boundary conditions (BCs). We reveal that in the ladder with weak rung coupling, the nonHermitian skin localization could induce a pseudo mobility edge in the complex energy plane, which separates states with extended and localized profiles yet allowing unidirectional transport of signals. We also demonstrate the gradual takeover of the non-Hermitian skin effect in the entire system with the increase of the rung coupling under conventional open BC. When taking open BC for the nonHermitian chain and periodic BC for the other, it is discovered that a quantized winding number defined under periodic BC could characterize the transition from the pseudo mobility edge to the trivial extended phases, establishing a "bulk-defect correspondence" in our quasi-1D non-Hermitian system. This work hence unveils more subtle properties of non-Hermitian skin effects and sheds light on the topological nature of the non-Hermitian localized modes in the proximity to systems with dissimilar localization properties.

Quantum state transfer is one of the basic tasks in quantum information processing. We here propose a theoretical approach to realize arbitrary entangled state transfer through a qubit chain, which is a class of extended Su-Schrieffer-Heeger models and accommodates multiple topological edge states separated from the bulk states. We show that an arbitrary entangled state, from $2$-qubit to $\mathcal{N}$-qubit, can be encoded in the corresponding edge states, and then adiabatically transferred from one end to the other of the chain. The dynamical phase differences resulting from the time evolutions of different edge states can be eliminated by properly choosing evolution time. Our approach is robust against both the qubit-qubit coupling disorder and the evolution time disorder. For the concreteness of discussions, we assume that such a chain is constructed by an experimentally feasible superconducting qubit system, meanwhile, our proposal can also be applied to other systems.

Magnetic susceptibility, specific heat, and neutron powder diffraction measurements have been performed on polycrystalline Li2Co(WO4)2 samples. Under zero magnetic field, two successive magnetic transitions at TN1 ~ 9.4 K and TN2 ~ 7.4 K are observed. The magnetic ordering temperatures gradually decrease as the magnetic field increases. Neutron diffraction reveals that Li2Co(WO4)2 enters an incommensurate magnetic state with a temperature dependent k between TN1 and TN2. The magnetic propagation vector locks-in to a commensurate value k = (1/2, 1/4, 1/4) below TN2. The antiferromagnetic structure is refined at 1.7 K with Co2+ magnetic moment 2.8(1) uB, consistent with our first-principles calculations.

Periodically-driven quantum systems make it possible to reach stationary states with new emerging properties. However, this process is notoriously difficult in the presence of interactions because continuous energy exchanges generally boil the system to an infinite temperature featureless state. Here, we describe how to reach nontrivial states in a periodically-kicked Gross-Pitaevskii disordered system. One ingredient is crucial: both disorder and kick strengths should be weak enough to induce sufficiently narrow and well-separated Floquet bands. In this case, inter-band heating processes are strongly suppressed and the system can reach an exponentially long-lived prethermal plateau described by the Rayleigh-Jeans distribution. Saliently, the system can even undergo a wave condensation process when its initial state has a sufficiently low total quasi-energy. These predictions could be tested in nonlinear optical experiments or with ultracold atoms.

Due to the lack of effective p-type doping in GaN and the adverse effects of surface band-bending of GaN on electron transport, developing practical GaN heterojunction bipolar transistors has been impossible. The recently demonstrated approach of grafting n-type GaN with p-type semiconductors, like Si and GaAs, by employing ultrathin (UO) Al$_2$O$_3$ at the interface of Si/GaN and GaAs/GaN, has shown the feasibility to overcome the poor p-type doping challenge of GaN by providing epitaxy-like interface quality. However, the surface band-bending of GaN that could be influenced by the UO Al2O3 has been unknown. In this work, the band-bending of c-plane, Ga-face GaN with UO Al2O3 deposition at the surface of GaN was studied using X-ray photoelectron spectroscopy (XPS). The study shows that the UO Al2O3 can help in suppressing the upward band-bending of the c-plane, Ga-face GaN with a monotonic reduction trend of the upward band-bending energy from 0.48 eV down to 0.12 eV as the number of UO Al2O3 deposition cycles is increased from 0 to 20 cycles. The study further shows that the band-bending can be mostly recovered after removing the Al2O3 layer, concurring that the change in the density of fixed charge at the GaN surface caused by UO Al2O3 is the main reason for the surface band-bending modulation. The potential implication of the surface band-bending results of AlGaAs/GaAs/GaN npn heterojunction bipolar transistor (HBT) was preliminarily studied via Silvaco(R) simulations.

A statistical framework is presented enabling optimal sampling and analysis of constant life fatigue data. Protocols using Bayesian maximum entropy sampling are built based on conventional staircase and stress step methods, reducing the requirement of prior knowledge for data collection. The Bayesian Staircase method shows improved parameter estimation efficiency, and the Bayesian Stress Step method shows equal accuracy to the standard method at larger step size allowing experimentalists to lessen concerns of loading history. Statistical methods for determining model suitability are shown, highlighting the influence of protocol. Experimental validation is performed, showing the applicability of the methods in laboratory testing.

Nonequilibrium topological matter has been a fruitful topic of both theoretical and experimental interest. A great variety of exotic topological phases unavailable in static systems may emerge under nonequilibrium situations, often challenging our physical intuitions. How to locate the borders between different nonequilibrium topological phases is an important issue to facilitate topological characterization and further understand phase transition behaviors. In this work, we develop an unsupervised machine-learning protocol to distinguish between different Floquet (periodically driven) topological phases, by incorporating the system's dynamics within one driving period, adiabatic deformation in the time dimension, plus the system's symmetry all into our machine learning algorithm. Results from two rich case studies indicate that machine learning is able to reliably reveal intricate topological phase boundaries and can hence be a powerful tool to discover novel topological matter afforded by the time dimension.

As a result of the Hund's coupling, the band structure of the conducting electrons in the skyrmion crystal (SkX) shares similar topological properties with that of graphene, such as its cone-like shape, nonzero band Chern number, edge states, and etc. In this work, we rigorously demonstrate that the Klein tunneling phenomena is also shared by these two. We use the Green's function technique and calculated the transmission probability of the electrons tunneling through an electrostatic barrier in the SkX expressed by the double exchange model. Numerical results of the SkX reproduced the Dirac model obtained by linear fitting the two-dimensional band structure of the SkX.

This work reports the general design and characterization of two exotic, anomalous nonequilibrium topological phases. In equilibrium systems, the Weyl nodes or the crossing points of nodal lines may become the transition points between higher-order and first-order topological phases defined on two-dimensional slices, thus featuring both hinge Fermi arc and surface Fermi arc. We advance this concept by presenting a strategy to obtain, using time-sequenced normal insulator phases only, Floquet higher-order Weyl semimetals and Floquet higher-order nexus semimetals, where the concerned topological singularities in the three-dimensional Brillouin zone border anomalous two-dimensional higher-order Floquet phases. The fascinating topological phases we obtain are previously unknown and can be experimentally studied using, for example, a three-dimensional lattice of coupled ring resonators.

The topological characterization of nonequilibrium topological matter is highly nontrivial because familiar approaches designed for equilibrium topological phases may not apply. In the presence of crystal symmetry, Floquet topological insulator states cannot be easily distinguished from normal insulators by a set of symmetry eigenvalues at high symmetry points in the Brillouin zone. This work advocates a physically motivated, easy-to-implement approach to enhance the symmetry analysis to distinguish between a variety of Floquet topological phases. Using a two-dimensional inversion-symmetric periodically-driven system as an example, we show that the symmetry eigenvalues for anomalous Floquet topological states, of both first-order and second-order, are the same as for normal atomic insulators. However, the topological states can be distinguished from one another and from normal insulators by inspecting the occurrence of stable symmetry inversion points in their microscopic dynamics. The analysis points to a simple picture for understanding how topological boundary states can coexist with localized bulk states in anomalous Floquet topological phases.

The non-Hermitian skin effect (NHSE) in non-Hermitian lattice systems depicts the exponential localization of eigenstates at system's boundaries. It has led to a number of counter-intuitive phenomena and challenged our understanding of bulk-boundary correspondence in topological systems. This work aims to investigate how the NHSE localization and topological localization of in-gap edge states compete with each other, with several representative static and periodically driven 1D models, whose topological properties are protected by different symmetries. The emerging insight is that at critical system parameters, even topologically protected edge states can be perfectly delocalized. In particular, it is discovered that this intriguing delocalization occurs if the real spectrum of the system's edge states falls on the same system's complex spectral loop obtained under the periodic boundary condition. We have also performed sample numerical simulation to show that such delocalized topological edge states can be safely reconstructed from time-evolving states. Possible applications of delocalized topological edge states are also briefly discussed.

The spontaneous breaking of parity-time ($\mathcal{PT}$) symmetry, which yields rich critical behavior in non-Hermitian systems, has stimulated much interest. Whereas most previous studies were performed within the single-particle or mean-field framework, exploring the interplay between $\mathcal{PT}$ symmetry and quantum fluctuations in a many-body setting is a burgeoning frontier. Here, by studying the collective excitations of a Fermi superfluid under an imaginary spin-orbit coupling, we uncover an emergent $\mathcal{PT}$-symmetry breaking in the Anderson-Bogoliubov (AB) modes, whose quasiparticle spectra undergo a transition from being completely real to completely imaginary, even though the superfluid ground state retains an unbroken $\mathcal{PT}$ symmetry. The critical point of the transition is marked by a non-analytic kink in the speed of sound, as the latter completely vanishes at the critical point where the system is immune to low-frequency perturbations.These critical phenomena derive from the presence of a spectral point gap in the complex quasiparticle dispersion, and are therefore topological in origin.

Topologically quantized response is one of the focal points of contemporary condensed matter physics. While it directly results in quantized response coefficients in quantum systems, there has been no notion of quantized response in classical systems thus far. This is because quantized response has always been connected to topology via linear response theory that assumes a quantum mechanical ground state. Yet, classical systems can carry arbitrarily amounts of energy in each mode, even while possessing the same number of measurable edge modes as their topological winding. In this work, we discover the totally new paradigm of quantized classical response, which is based on the spectral winding number in the complex spectral plane, rather than the winding of eigenstates in momentum space. Such quantized response is classical insofar as it applies to phenomenological non-Hermitian setting, arises from fundamental mathematical properties of the Green's function, and shows up in steady-state response, without invoking a conventional linear response theory. Specifically, the ratio of the change in one quantity depicting signal amplification to the variation in one imaginary flux-like parameter is found to display fascinating plateaus, with their quantized values given by the spectral winding numbers as the topological invariants.

The recent discoveries of higher-order topological insulators (HOTIs) have shifted the paradigm of topological materials, which was previously limited to topological states at boundaries of materials, to those at boundaries of boundaries, such as corners . So far, all HOTI realisations have assumed static equilibrium described by time-invariant Hamiltonians, without considering time-variant or nonequilibrium properties. On the other hand, there is growing interest in nonequilibrium systems in which time-periodic driving, known as Floquet engineering, can induce unconventional phenomena including Floquet topological phases and time crystals. Recent theories have attemped to combine Floquet engineering and HOTIs, but there has thus far been no experimental realisation. Here we report on the experimental demonstration of a two-dimensional (2D) Floquet HOTI in a three-dimensional (3D) acoustic lattice, with modulation along z axis serving as an effective time-dependent drive. Direct acoustic measurements reveal Floquet corner states that have time-periodic evolution, whose period can be even longer than the underlying drive, a feature previously predicted for time crystals. The Floquet corner states can exist alongside chiral edge states under topological protection, unlike previous static HOTIs. These results demonstrate the unique space-time dynamic features of Floquet higher-order topology.