Dr. Rimoon AGAIBY

München, Bayern, Deutschland Kontaktinformationen
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Aktivitäten

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Berufserfahrung und Ausbildung

  • Samsung Semiconductor

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Ehrenamt

  • INSEAD Grafik

    INSEAD Alumni Association Global Mentorship Programme

    INSEAD

    –Heute 3 Jahre

    Education

    Mentoring (i) Consultant at BCG and a (ii) Consultant at EY-Parthenon and a (iii) Manager at McKinsey

    The IAA Global Mentorship Programme is a new 9-month initiative that pairs junior alumni with more experienced business mentors to help them navigate corporate life with the benefits of peer expertise. Alumni can search for advisors by expertise or location, as well as based on industry knowledge of specific topics such as starting a business, switching careers or the work-life conundrum

  • INSEAD Grafik

    INSEAD Investors Circle

    INSEAD

    –Heute 4 Jahre 10 Monate

    Education

    Supporting education can solve many of the issues we see in the world today. Through the INSEAD Alumni Association, I support MBA candidates at INSEAD with tuition fees so we can all grow and be a force for good in the world
    Also supported the MBA Scholarship for Women as part of the funding campaign for 2022/2023

  • Member Of The Supervisory Board

    Coptic Orthodox Church in Saxony, Germany

    6 Jahre 1 Monat

    Social Services

    One of the 5 founding members of the Coptic Orthodox Charity in the German state of Saxony

  • Math and English Teacher

    Copts in Need

    2 Monaten

    Children

    As part of a youth group out of the UK, traveled with Copts in Need to spend one week in the Garbage Village on the outskirts of Cairo, Egypt to teach small kids 5-12 years old English and Math in a day school for a few hours while they were taking a break from helping their parents gathering garbage and sorting it for recycling

Patente

  • METHOD OF FORMING A HIGH QUALITY INTERFACIAL LAYER FOR A SEMICONDUCTOR DEVICE BY PERFORMING A LOW TEMPERATURE ALD PROCESS

    Angemeldet am US US 20140242788

    One illustrative method disclosed herein includes performing an atomic layer deposition (ALD) process at a temperature of less than 400° C. to deposit a layer of silicon dioxide on a germanium-containing region of semiconductor material and forming a gate structure of a transistor device above the layer of silicon dioxide.

    Andere Erfinder:innen

Auszeichnungen/Preise

  • CEO Award Winner for High Value Project Delivery

    Ricardo plc

    Recognition for high value client project delivery across all Ricardo plc business lines

  • Top 5% of the class (130 students) in Advanced Strategic Management/Strategic Management modules, The Manchester Business School MBA

    Alliance Manchester Business School

  • Excellence Award for extraordinary demonstration of the core values and behaviors in leading

    GLOBALFOUNDRIES

    Successfully concluding the ZG oxide Taskforce for two major customer accounts

  • IEEE Electron Devices Society Graduate Student Fellowship

    IEEE Electron Device Society

    One year fellowships are awarded to promote, recognize, and support PhD level study and research within the Electron Devices Society’s field of interest

  • International Research Scholarship

    University of Newcastle upon Tyne

Sprachen

  • English

    Muttersprache oder zweisprachig

  • German

    Fließend

  • Arabic

    Muttersprache oder zweisprachig

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