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SPICE-aided modelling of dc characteristics of power bipolar transistors with self-heating taken into account. (English) Zbl 1179.78089

Summary: This paper deals with the problem of calculations of the dc characteristics of power bipolar transistors (BJTs) with self-heating taken into account. The electrothermal model of the considered devices dedicated for PSPICE is presented. The correctness of the model was verified experimentally in all ranges of the BJT operation. Two transistors – BD285 and 2N3055 – were arbitrarily selected for investigation. A good agreement between the measured and calculated characteristics of these transistors was observed.

MSC:

78A55 Technical applications of optics and electromagnetic theory
80A20 Heat and mass transfer, heat flow (MSC2010)
Full Text: DOI

References:

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