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Chen, X. G.; Fu, J. B.; Li, L. Z.; Yun, C.; Zhao, H.; Zhang, X. F.; Wang, C. S.; Yang, Y. C.; Yang, J. B.

Resistive switching effects in \(\mathrm{CeO}_2/\mathrm{La}_{0.7}(\mathrm{Sr}_{0.1}\mathrm{Ca}_{0.9})_{0.3}\mathrm{MnO}_3/\mathrm{Pt}\). (English) Zbl 1306.78008

Phys. Lett., A 378, No. 34, 2561-2564 (2014).
Summary: The heterostructural junctions of \(\mathrm{CeO}_2/\mathrm{La}_{0.7}(\mathrm{Sr}_{0.1}\mathrm{Ca}_{0.9})_{0.3}\mathrm{MnO}_3/\mathrm{Pt}\, (\mathrm{CeO}_2/\mathrm{LSCMO/Pt})\) were prepared using pulse laser deposition technique. Their resistive switching (RS) behavior was investigated. As compared to the metal/manganite/Pt junction, the \((\mathrm{CeO}_2/\mathrm{LSCMO/Pt})\) device displayed an improved switching characteristic. The RS effects with characteristics of bipolar, threshold, and complementary were realized by adjusting the thicknesses of the \(\mathrm{CeO}_2\) layer in the \(\mathrm{CeO}_2/\mathrm{LSCMO/Pt}\) junctions. Under a higher external bias voltage, the threshold and complementary switching modes of the junctions could turn into bipolar switching mode. The switching behavior shows strong dependence on the \(O_2\) partial pressure during the fabrication, indicating that the amount and behavior of the oxygen at the interface play an important role in the determination of the RS behavior. The observed switching behavior is related to the modification of the accumulation/depletion layers as well as the interfacial potential barrier due to the migration of the oxygen vacancies.

MSC:

78A55 Technical applications of optics and electromagnetic theory
94C10 Switching theory, application of Boolean algebra; Boolean functions (MSC2010)

Keywords:

resistive switching; junction
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