Reply to: Mobility overestimation in MoS$_2$ transistors due to invasive voltage probes
Abstract
In this reply, we include new experimental results and verify that the observed non-linearity in rippled-MoS$_2$ (leading to mobility kink) is an intrinsic property of a disordered system, rather than contact effects (invasive probes) or other device issues. Noting that Peng Wu's hypothesis is based on a highly ordered ideal system, transfer curves are expected to be linear, and the carrier density is assumed be constant. Wu's model is therefore oversimplified for disordered systems and neglects carrier-density dependent scattering physics. Thus, it is fundamentally incompatible with our rippled-MoS$_2$, and leads to the wrong conclusion.
- Publication:
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arXiv e-prints
- Pub Date:
- July 2023
- DOI:
- 10.48550/arXiv.2307.07787
- arXiv:
- arXiv:2307.07787
- Bibcode:
- 2023arXiv230707787N
- Keywords:
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- Condensed Matter - Materials Science;
- Condensed Matter - Mesoscale and Nanoscale Physics