Complexes of dipolar excitons in layered quasi-two-dimensional nanostructures
Abstract
We discuss neutral and charged complexes (biexcitons and trions) formed by indirect excitons in layered quasi-two-dimensional semiconductor heterostructures. Indirect excitons—long-lived neutral Coulomb-bound pairs of electrons and holes of different layers—have been known for semiconductor coupled quantum wells and have recently been reported for van der Waals heterostructures such as double bilayer graphene and transition-metal dichalcogenides. Using the configuration space approach, we derive the analytical expressions for the trion and biexciton binding energies as a function of interlayer distance. The method captures essential kinematics of complex formation to reveal significant binding energies, up to a few tens of meV for typical interlayer distances ∼3 -5 Å , with the trion binding energy always being greater than that of the biexciton. Our results can contribute to the understanding of more complex many-body phenomena such as exciton Bose-Einstein condensation and Wigner-like electron-hole crystallization in layered semiconductor heterostructures.
- Publication:
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Physical Review B
- Pub Date:
- April 2018
- DOI:
- 10.1103/PhysRevB.97.165419
- arXiv:
- arXiv:1712.10312
- Bibcode:
- 2018PhRvB..97p5419B
- Keywords:
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- Condensed Matter - Mesoscale and Nanoscale Physics
- E-Print:
- 10 pages, 4 figures, 105 references. arXiv admin note: text overlap with arXiv:1605.02348