A heterojunction modulation-doped Mott transistor
Abstract
A heterojunction Mott field effect transistor (FET) is proposed that consists of an epitaxial channel material that exhibits an electron correlation induced Mott metal-to-insulator transition. The Mott material is remotely (modulation) doped with a degenerately doped conventional band insulator. An applied voltage modulates the electron transfer from the doped band insulator to the Mott material and produces transistor action by inducing an insulator-to-metal transition. Materials parameters from rare-earth nickelates and SrTiO3 are used to assess the potential of the "modulation-doped Mott FET" (ModMottFET or MMFET) as a next-generation switch. It is shown that the MMFET is characterized by unique "charge gain" characteristics as well as competitive transconductance, small signal gain, and current drive.
- Publication:
-
Journal of Applied Physics
- Pub Date:
- October 2011
- DOI:
- 10.1063/1.3651612
- arXiv:
- arXiv:1109.5299
- Bibcode:
- 2011JAP...110h4503S
- Keywords:
-
- electron correlations;
- high electron mobility transistors;
- metal-insulator transition;
- strontium compounds;
- 85.30.Tv;
- Field effect devices;
- Condensed Matter - Materials Science;
- Condensed Matter - Strongly Correlated Electrons
- E-Print:
- The article has been accepted by Journal of Applied Physics. After it is published, it will be found at: http://jap.aip.org/