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Thanks to their record high refractive index and giant optical anisotropy, van der Waals (vdW) materials have accelerated the development of nanophotonics. However, traditional high refractive index materials, such as titanium dioxide (TiO2), still dominate in the most important visible range. This is due to the current lack of transparent vdW materials across the entire visible spectrum. In this context, we propose that germanium disulfide (GeS2) could offer a significant breakthrough. With its high refractive index, negligible losses, and biaxial optical anisotropy across the whole visible range, GeS2 has the potential to complement TiO2 and close the application gap of vdW materials in the visible spectrum. The addition of GeS2 could have a profound impact on the design of van der Waals nanophotonic circuits for any operation wavelength from ultraviolet to infrared, emphasizing the significance of the potential impact of GeS2 on the field of nanophotonics.

Chirality is probably the most mysterious among all symmetry transformations. Very readily broken in biological systems, it is practically absent in naturally occurring inorganic materials and is very challenging to create artificially. Chiral optical wavefronts are often used for the identification, control and discrimination of left- and right-handed biological and other molecules. Thus, it is crucially important to create materials capable of chiral interaction with light, which would allow one to assign arbitrary chiral properties to a light field. In this paper, we utilized van der Waals technology to assemble helical homostructures with chiral properties (e. g. circular dichroism). Because of the large range of van der Waals materials available such helical homostructures can be assigned with very flexible optical properties. We demonstrate our approach by creating helical homostructures based on multilayer As$_2$S$_3$, which offers the most pronounced chiral properties even in thin structures due to its strong biaxial optically anisotropy. Our work showcases that the chirality of an electromagnetic system may emerge at an intermediate level between the molecular and the mesoscopic one due to the tailored arrangement of non-chiral layers of van der Waals crystals and without additional patterning.

Bandstructure engineering using alloying is widely utilised for achieving optimised performance in modern semiconductor devices. While alloying has been studied in monolayer transition metal dichalcogenides, its application in van der Waals heterostructures built from atomically thin layers is largely unexplored. Here, we fabricate heterobilayers made from monolayers of WSe$_2$ (or MoSe$_2$) and Mo$_x$W$_{1-x}$Se$_2$ alloy and observe nontrivial tuning of the resultant bandstructure as a function of concentration $x$. We monitor this evolution by measuring the energy of photoluminescence (PL) of the interlayer exciton (IX) composed of an electron and hole residing in different monolayers. In Mo$_x$W$_{1-x}$Se$_2$/WSe$_2$, we observe a strong IX energy shift of $\approx$100 meV for $x$ varied from 1 to 0.6. However, for $x<0.6$ this shift saturates and the IX PL energy asymptotically approaches that of the indirect bandgap in bilayer WSe$_2$. We theoretically interpret this observation as the strong variation of the conduction band K valley for $x>0.6$, with IX PL arising from the K-K transition, while for $x<0.6$, the bandstructure hybridization becomes prevalent leading to the dominating momentum-indirect K-Q transition. This bandstructure hybridization is accompanied with strong modification of IX PL dynamics and nonlinear exciton properties. Our work provides foundation for bandstructure engineering in van der Waals heterostructures highlighting the importance of hybridization effects and opening a way to devices with accurately tailored electronic properties.

The emergence of van der Waals (vdW) materials resulted in the discovery of their giant optical, mechanical, and electronic anisotropic properties, immediately enabling countless novel phenomena and applications. Such success inspired an intensive search for the highest possible anisotropic properties among vdW materials. Furthermore, the identification of the most promising among the huge family of vdW materials is a challenging quest requiring innovative approaches. Here, we suggest an easy-to-use method for such a survey based on the crystallographic geometrical perspective of vdW materials followed by their optical characterization. Using our approach, we found As2S3 as a highly anisotropic vdW material. It demonstrates rare giant in-plane optical anisotropy, high refractive index and transparency in the visible range, overcoming the century-long record set by rutile. Given these benefits, As2S3 opens a pathway towards next-generation nanophotonics as demonstrated by an ultrathin true zero-order quarter-waveplate that combines classical and the Fabry-Perot optical phase accumulations. Hence, our approach provides an effective and easy-to-use method to find vdW materials with the utmost anisotropic properties.

With the advance of on-chip nanophotonics, there is a high demand for high refractive index, low-loss materials. Currently, this technology is dominated by silicon, but van der Waals (vdW) materials with high refractive index can offer a very advanced alternative. Still, up to now it was not clear if the optical anisotropy perpendicular to the layers might be a hindering factor for the development of vdW nanophotonics. Here, we studied WS2-based waveguides in terms of their optical properties and, particularly, in terms of possible crosstalk distance. Surprisingly, we discovered that the low refractive index in the direction perpendicular to the atomic layers improves the characteristics of such devices, mainly due to expanding the range of parameters at which single-mode propagation can be achieved. Thus, using anisotropic materials offers new opportunities and novel control knobs when designing the nanophotonic devices.

A global trend to miniaturization and multiwavelength performance of nanophotonic devices drives research on novel phenomena, such as bound states in the continuum and Mietronics, as well as the survey for high-refractive index and strongly anisotropic materials and metasurfaces. Hexagonal boron nitride (hBN) is one of promising materials for the future nanophotonics owing to its inherent anisotropy and prospects of high-quality monocrystals growth with atomically flat surface. Here, we present highly accurate optical constants of hBN in the broad wavelength range of 250-1700 nm combining the imaging ellipsometry measurements scanning near-field optical microscopy and first-principle quantum mechanical computations. hBN's high refractive index, up to 2.75 in ultraviolet (UV) and visible range, broadband birefringence of 0.7, and negligible optical losses make it an outstanding material for UV and visible range photonics. Based on our measurement results, we propose and design novel optical elements: handedness-preserving mirrors and subwavelength waveguides with dimensions of 40 nm operating in the visible and UV range, respectively. Remarkably, our results offer unique opportunity to bridge the size-gap between photonics and electronics.

Photoconductivity of novel materials is the key property of interest for design of photodetectors, optical modulators, and switches. Despite the photoconductivity of most novel 2d materials has been studied both theoretically and experimentally, the same is not true for 2d p-n junctions that are necessary blocks of most electronic devices. Here, we study the sub-terahertz photocoductivity of gapped bilayer graphene with electrically-induced p-n junctions. We find a strong positive contribution from junctions to resistance, temperature resistance coefficient and photo-resistivity at cryogenic temperatures T ~ 20 K. The contribution to these quantities from junctions exceeds strongly the bulk values at uniform channel doping even at small band gaps ~ 10 meV. We further show that positive junction photoresistance is a hallmark of interband tunneling, and not of intra-band thermionic conduction. Our results point to the possibility of creating various interband tunneling devices based on bilayer graphene, including steep-switching transistors and selective sensors.

During the last years, giant optical anisotropy demonstrated its paramount importance for light manipulation which resulted in numerous applications ranging from subdiffraction light guiding to switchable nanolasers. In spite of recent advances in the field, achieving continuous tunability of optical anisotropy remains an outstanding challenge. Here, we present a solution to the problem through chemical alteration of the ratio of halogen atoms (X = Br or Cl) in single-crystal CsPbX$_3$ halide perovskites. It turns out that the anisotropy originates from an excitonic resonance in the perovskite, which spectral position and strength are determined by the halogens composition. As a result, we manage to continually modify the optical anisotropy by 0.14. We also discover that the halide perovskite can demonstrate optical anisotropy up to 0.6 in the visible range -- the largest value among non-van der Waals materials. Moreover, our results reveal that this anisotropy could be in-plane and out-of-plane, depending on perovskite shape -- rectangular and square. Hence, it can serve as an additional degree of freedom for anisotropy manipulation. As a practical demonstration, we created perovskite anisotropic nanowaveguides and show a significant impact of anisotropy on high-order guiding modes. These findings pave the way for halide perovskites as a next-generation platform for tunable anisotropic photonics.

Free-space circularly polarized light (CPL) detection, requiring polarizers and waveplates, has been well established, while such spatial degree of freedom is unfortunately absent in integrated on-chip optoelectronics. So far, those reported filterless CPL photodetectors suffer from the intrinsic small discrimination ratio, vulnerability to the non-CPL field components, and low responsivity. Here, we report a distinct paradigm of geometric photodetectors in mid-infrared exhibiting colossal discrimination ratio, close-to-perfect CPL-specific response, a zero-bias responsivity of 392 V/W at room temperature, and a detectivity of ellipticity down to 0.03$^o$ Hz$^{-1/2}$. Our approach employs plasmonic nanostructures array with judiciously designed symmetry, assisted by graphene ribbons to electrically read their near-field optical information. This geometry-empowered recipe for infrared photodetectors provides a robust, direct, strict, and high-quality solution to on-chip filterless CPL detection and unlocks new opportunities for integrated functional optoelectronic devices.

Recent developments in the area of resonant dielectric nanostructures has created attractive opportunities for the concentrating and manipulating light at the nanoscale and the establishment of new exciting field of all-dielectric nanophotonics. Transition metal dichalcogenides (TMDCs) with nanopatterned surfaces are especially promising for these tasks. Still, the fabrication of these structures requires sophisticated lithographic processes, drastically complicating application prospects. To bridge this gap and broaden the application scope of TMDC nanomaterials, we report here femtosecond laser-ablative fabrication of water-dispersed spherical TMDC (MoS2 and WS2) nanoparticles (NPs) of variable size (5 - 250 nm). Such nanoparticles demonstrate exciting optical and electronic properties inherited from TMDC crystals, due to preserved crystalline structure, which offers a unique combination of pronounced excitonic response and high refractive index value, making possible a strong concentration of electromagnetic field in the nanoparticles. Furthermore, such nanoparticles offer additional tunability due to hybridization between the Mie and excitonic resonances. Such properties bring to life a number of nontrivial effects, including enhanced photoabsorption and photothermal conversion. As an illustration, we demonstrate that the nanoparticles exhibit a very strong photothermal response, much exceeding that of conventional dielectric nanoresonators based on Si. Being in a mobile colloidal state and exhibiting superior optical properties compared to other dielectric resonant structures, the synthesized TMDC nanoparticles offer opportunities for the development of next-generation nanophotonic and nanotheranostic platforms, including photothermal therapy and multimodal bioimaging.

The topological structure associated with the branchpoint singularity around an exceptional point (EP) provides new tools for controlling the propagation of electromagnetic waves and their interaction with matter. To date, observation of EPs in light-matter interactions has remained elusive and has hampered further progress in applications of EP physics. Here, we demonstrate the emergence of EPs in the electrically controlled interaction of light with a collection of organic molecules in the terahertz regime at room temperature. We show, using time-domain terahertz spectroscopy, that the intensity and phase of terahertz pulses can be controlled by a gate voltage which drives the device across the EP. This fully electrically-tuneable system allows reconstructing the Riemann surface associated with the complex energy landscape and provides a topological control of light by tuning the loss-imbalance and frequency detuning of interacting modes. We anticipate that our work could pave the way for new means of dynamic control on the intensity and phase of terahertz field, developing topological optoelectronics, and studying the manifestations of EP physics in the quantum correlations of the light emitted by a collection of emitters coupled to resonators.

Atomically thin transition metal dichalcogenides (TMDCs) present a promising platform for numerous photonic applications due to excitonic spectral features, possibility to tune their constants by external gating, doping, or light, and mechanical stability. Utilization of such materials for sensing or optical modulation purposes would require a clever optical design, as by itself the 2D materials can offer only a small optical phase delay - consequence of the atomic thickness. To address this issue, we combine films of 2D semiconductors which exhibit excitonic lines with the Fabry-Perot resonators of the standard commercial SiO$_2$/Si substrate, in order to realize topological phase singularities in reflection. Around these singularities, reflection spectra demonstrate rapid phase changes while the structure behaves as a perfect absorber. Furthermore, we demonstrate that such topological phase singularities are ubiquitous for the entire class of atomically thin TMDCs and other high-refractive-index materials, making it a powerful tool for phase engineering in flat optics. As a practical demonstration, we employ PdSe$_2$ topological phase singularities for a refractive index sensor and demonstrate its superior phase sensitivity compared to typical surface plasmon resonance sensors.

The convergent beam electron diffraction (CBED) patterns of twisted bilayer samples exhibit interference patterns in their CBED spots. Such interference patterns can be treated as off-axis holograms and the phase of the scattered waves, meaning the interlayer distance can be reconstructed. A detailed protocol of the reconstruction procedure is provided in this study. In addition, we derive an exact formula for reconstructing the interlayer distance from the recovered phase distribution, which takes into account the different chemical compositions of the individual monolayers. It is shown that one interference fringe in a CBED spot is sufficient to reconstruct the distance between the layers, which can be practical for imaging samples with a relatively small twist angle or when probing small sample regions. The quality of the reconstructed interlayer distance is studied as a function of the twist angle. At smaller twist angles, the reconstructed interlayer distance distribution is more precise and artefact free. At larger twist angles, artefacts due to the moiré structure appear in the reconstruction. A method for the reconstruction of the average interlayer distance is presented. As for resolution, the interlayer distance can be reconstructed by the holographic approach at an accuracy of 0.5 A, which is a few hundred times better than the intrinsic z-resolution of diffraction limited resolution, as expressed through the spread of the measured k-values. Moreover, we show that holographic CBED imaging can detect variations as small as 0.1 A in the interlayer distance, though the quantitative reconstruction of such variations suffers from large errors.

Optical materials with colour-changing abilities have been explored for display devices, smart windows, or modulation of visual appearance. The efficiency of these materials, however, has strong wavelength dependence, which limits their functionality to a narrow spectral range. Here, we report graphene-based electro-optical devices with unprecedented optical tunability covering the entire electromagnetic spectrum from the visible to microwave. We achieve this non-volatile and reversible tunability by electro-intercalation of lithium into graphene layers in an optically accessible device structure. This unique colour-changing capability, together with area-selective intercalation, inspires fabrication of new multispectral devices, including display devices and electro-optical camouflage coating. We anticipate that these results provide realistic approaches for programmable smart optical surfaces with a potential utility in many scientific and engineering fields.

Large optical anisotropy observed in a broad spectral range is of paramount importance for efficient light manipulation in countless devices. Although a giant anisotropy was recently observed in the mid-infrared wavelength range, for visible and near-infrared spectral intervals, the problem remains acute with the highest reported birefringence values of 0.8 in BaTiS3 and h-BN crystals. This inspired an intensive search for giant optical anisotropy among natural and artificial materials. Here, we demonstrate that layered transition metal dichalcogenides (TMDCs) provide an answer to this quest owing to their fundamental differences between intralayer strong covalent bonding and weak interlayer van der Walls interaction. To do this, we carried out a correlative far- and near-field characterization validated by first-principle calculations that reveals an unprecedented birefringence of 1.5 in the infrared and 3 in the visible light for MoS2. Our findings demonstrate that this outstanding anisotropy allows for tackling the diffraction limit enabling an avenue for on-chip next-generation photonics.

The availability of accessible fabrication methods based on deterministic transfer of atomically thin crystals has been essential for the rapid expansion of research into van der Waals heterostructures. An inherent issue of these techniques is the deformation of the polymer carrier film during the transfer, which can lead to highly non-uniform strain induced in the transferred two-dimensional material. Here, using a combination of optical spectroscopy, atomic force and Kelvin probe force microscopy, we show that the presence of nanometer scale wrinkles formed due to transfer-induced stress relaxation can lead to strong changes in the optical properties of MoSe$_2$/WSe$_2$ heterostructures and the emergence of the linearly polarized interlayer exciton photoluminescence. We attribute these changes to the local breaking of crystal symmetry in the nanowrinkles, which act as efficient accumulation centers for the interlayer excitons due to the strain-induced interlayer band gap reduction. The surface potential images of the rippled heterobilayer samples acquired using Kelvin probe force microscopy reveal the variation of the local work function consistent with the strain-induced band gap modulation, while the potential offset observed at the ridges of the wrinkles shows a clear correlation with the value of the tensile strain estimated from the wrinkle geometry. Our findings highlight the important role of the residual strain in defining optical properties of van der Waals heterostructures and suggest novel approaches for interlayer exciton manipulation by local strain engineering.

Convergent beam electron diffraction is routinely applied for studying deformation and local strain in thick crystals by matching the crystal structure to the observed intensity distributions. Recently, it has been demonstrated that CBED can be applied for imaging two-dimensional (2D) crystals where a direct reconstruction is possible and three-dimensional crystal deformations at a nanometre resolution can be retrieved. Here, we demonstrate that second-order effects allow for further information to be obtained regarding stacking arrangements between the crystals. Such effects are especially pronounced in samples consisting of multiple layers of 2D crystals. We show, using simulations and experiments, that twisted multilayer samples exhibit extra modulations of interference fringes in CBED patterns, i. e., a CBED moiré. A simple and robust method for the evaluation of the composition and the number of layers from a single-shot CBED pattern is demonstrated.

Optoelectronic devices which allow rerouting, modulation and detection of the optical signals would be extremely beneficial for telecommunication technology. One of the most promising platforms for such devices are excitonic devices, as they offer very efficient coupling to light. Of especial importance are those based on indirect excitons, because of their long lifetime. Here we demonstrate excitonic transistor and router based on bilayer of WSe2. Due to their strong dipole moment, excitons in bilayer WSe2 can be controlled by transverse electric field. At the same time, unlike indirect excitons in artificially stacked heterostructures based on transition metal dichalcogenides - naturally stacked bilayer offers long exciton lifetime, smaller non-radiative losses, and are much simpler in fabrication.

Vertical stacking of atomically thin layered materials opens new possibilities for the fabrication of heterostructures with favorable optoelectronic properties. The combination of graphene, hexagonal boron nitride and semiconducting transition metal dichalcogenides allows fabrication of electroluminescence (EL) devices, compatible with a wide range of substrates. Here, we demonstrate a full integration of an electroluminescent van der Waals heterostructure in a monolithic optical microcavity made of two high reflectivity dielectric distributed Bragg reflectors (DBRs). Owing to the presence of graphene and hexagonal boron nitride protecting the WSe$_2$ during the top mirror deposition, we fully preserve the optoelectronic behaviour of the device. Two bright cavity modes appear in the EL spectrum featuring Q-factors of 250 and 580 respectively: the first is attributed directly to the monolayer area, while the second is ascribed to the portion of emission guided outside the WSe$_2$ island. By embedding the EL device inside the microcavity structure, a significant modification of the directionality of the emitted light is achieved, with the peak intensity increasing by nearly two orders of magnitude at the angle of the maximum emission compared with the same EL device without the top DBR. Furthermore, the coupling of the WSe$_2$ EL to the cavity mode with a dispersion allows a tuning of the peak emission wavelength exceeding 35 nm (80 meV) by varying the angle at which the EL is observed from the microcavity. This work provides a route for the development of compact vertical-cavity surface-emitting devices based on van der Waals heterostructures.

Few layer graphene (FLG) has been recently intensively investigated for its variable electronic properties defined by a local atomic arrangement. While the most natural layers arrangement in FLG is ABA (Bernal) stacking, a metastable ABC (rhombohedral) stacking characterized by a relatively high energy barrier can also occur. When both stacking occur in the same FLG device this results in in-plane heterostructure with a domain wall (DW). We show that ABC stacking in FLG can be controllably and locally turned into ABA stacking by two following approaches. In the first approach, Joule heating was introduced and the transition was characterized by 2D-peak Raman spectra at a submicron spatial resolution. The observed transition was initiated at a small region and then the DW controllably shifted until the entire device became ABA stacked. In the second approach, the transition was achieved by illuminating the ABC region with a train of laser pulses of 790 nm wavelength, while the transition was visualized by transmission electron microscopy in both diffraction and dark field modes. Also, with this approach, a DW was visualized in the dark-field imaging mode, at a nanoscale spatial resolution.

Natural fibers composites are considered as sustainable alternative to synthetic composites due to their environmental and economic benefits. However, they suffer from poor mechanical and interfacial properties due to a random fiber orientation and weak fiber-matrix interface. Here we report nano-engineered graphene-based natural jute fiber preforms with a new fiber architecture (NFA) which significantly improves their properties and performances. Our graphene-based NFA of jute fiber perform enhances Young modulus of jute-epoxy composites by ~324% and tensile strength by ~110% more than untreated jute fiber composites, by arranging fibers in parallel direction through individualisation and nano surface engineering with graphene derivatives. This could potentially lead to manufacturing of high performance natural alternatives to synthetic composites in various stiffness driven high performance applications.

Inkjet-printed wearable electronic textiles (e-textiles) are considered to be very promising due to excellent processing and environmental benefits offered by digital fabrication technique. Inkjet-printing of conductive metallic inks such as silver (Ag) nanoparticles (NPs) are well-established and that of graphene-based inks is of great interest due to multi-functional properties of graphene-based materials. However, poor ink stability at higher graphene concentration and the cost associated with the higher Ag loading in metal inks have limited their wider use. Moreover, graphene-based e-textiles reported so far are mainly based on graphene derivatives such as graphene oxide (GO) or reduced graphene oxide (rGO), which suffers from poor electrical conductivity. Here we report inkjet printing of highly conductive and cost-effective graphene/Ag composite inks for wearable e-textiles applications. The composite inks were formulated, characterised and inkjet-printed onto PEL paper first and then sintered at 150 C for 1 hr. The sheet resistance of the printed patterns is found to be in the range of ~0.08 - 4.74 ohm/sq depending on the number of print layers and the graphene/Ag ratio in the formulation. The optimised composite ink was then successfully printed onto surface pre-treated (by inkjet printing) cotton fabrics in order to produce all-inkjet-printed highly conductive and cost-effective electronic textiles.

The pH dependence of emission from graphene oxide is believed to be due to the protonation of surface functional groups. In this study we use transient absorption spectroscopy to study the sub-picosecond charge dynamics in graphene oxide over a range of pH values, observing dynamics consistent with an excited state protonation step for pH < 9.3. The timescale of this process is ~ 1.5 ps, and a corresponding change in recombination dynamics follows. A broad photo-induced absorption peak centred at 530 nm associated with excited state protonation is also observed.

Atomically-thin layers of two-dimensional materials can be assembled in vertical stacks held together by relatively weak van der Waals forces, allowing for coupling between monolayer crystals with incommensurate lattices and arbitrary mutual rotation. A profound consequence of using these degrees of freedom is the emergence of an overarching periodicity in the local atomic registry of the constituent crystal structures, known as a moiré superlattice. Its presence in graphene/hexagonal boron nitride (hBN) structures led to the observation of electronic minibands, whereas its effect enhanced by interlayer resonant conditions in twisted graphene bilayers culminated in the observation of the superconductor-insulator transition at magic twist angles. Here, we demonstrate that, in semiconducting heterostructures built of incommensurate MoSe2 and WS2 monolayers, excitonic bands can hybridise, resulting in the resonant enhancement of the moiré superlattice effects. MoSe2 and WS2 are specifically chosen for the near degeneracy of their conduction band edges to promote the hybridisation of intra- and interlayer excitons, which manifests itself through a pronounced exciton energy shift as a periodic function of the interlayer rotation angle. This occurs as hybridised excitons (hX) are formed by holes residing in MoSe2 bound to a twist-dependent superposition of electron states in the adjacent monolayers. For heterostructures with almost aligned pairs of monolayer crystals, resonant mixing of the electron states leads to pronounced effects of the heterostructure's geometrical moiré pattern on the hX dispersion and optical spectrum. Our findings underpin novel strategies for band-structure engineering in semiconductor devices based on van der Waals heterostructures.

A well-defined insulating layer is of primary importance in the fabrication of passive (e.g. capacitors) and active (e.g. transistors) components in integrated circuits. One of the most widely known 2-Dimensional (2D) dielectric materials is hexagonal boron nitride (hBN). Solution-based techniques are cost-effective and allow simple methods to be used for device fabrication. In particular, inkjet printing is a low-cost, non-contact approach, which also allows for device design flexibility, produces no material wastage and offers compatibility with almost any surface of interest, including flexible substrates. In this work we use water-based and biocompatible graphene and hBN inks to fabricate all-2D material and inkjet-printed capacitors. We demonstrate an areal capacitance of 2.0 \pm 0.3 nF cm^(-2) for a dielectric thickness of ∼3 \mu m and negligible leakage currents, averaged across more than 100 devices. This gives rise to a derived dielectric constant of 6.1 \pm 1.7. The inkjet printed hBN dielectric has a breakdown field of 1.9 \pm 0.3 MV cm^(-1). Fully printed capacitors with sub-/mu m hBN layer thicknesses have also been demonstrated. The capacitors are then exploited in two fully printed demonstrators: a resistor-capacitor (RC) low-pass filter and a graphene-based field effect transistor.

Van der Waals heterostructures have been lately intensively studied because they offer a large variety of properties that can be controlled by selecting 2D materials and their sequence in the stack. The exact arrangement of the layers as well as the exact arrangement of the atoms within the layers, both are important for the properties of the resulting device. Recently it has been demonstrated that convergent beam electron diffraction (CBED) allows quantitative three-dimensional mapping of atomic positions in three-dimensional materials from a single CBED pattern. In this study we investigate CBED in more detail by simulating and performing various CBED regimes, with convergent and divergent wavefronts, on a somewhat simplified system: a 2D monolayer crystal. In CBED, each CBED spot is in fact an in-line hologram of the sample, where in-line holography is known to exhibit high intensity contrast in detection of weak phase objects that are not detectable in conventional in-focus imaging mode. Adsorbates exhibit strong intensity contrast in zero and higher order CBED spots, whereas lattice deformation such as strain or rippling cause noticeable intensity contrast only in the first and higher order CBED spots. The individual CBED spots can be reconstructed as typical in-line holograms, and the resolution of 2.13 A can be in principle achieved in the reconstructions. We provide simulated and experimental examples of CBED of a 2D monolayer crystal. The simulations show that individual CBED spots can be treated as in-line holograms and sample distributions such as adsorbates, can be reconstructed. Individual atoms can be reconstructed from a single CBED pattern provided the later exhibits high-order CBED spots. Examples of reconstructions obtained from experimental CBED patterns, at a resolution of 2.7 A, are shown.

Van der Waals heterostructures, which explore the synergetic properties of two-dimensional (2D) materials when assembled into three-dimensional stacks, have already brought to life a number of exciting new phenomena and novel electronic devices. Still, the interaction between the layers in such assembly, possible surface reconstruction, intrinsic and extrinsic defects are very difficult to characterise by any method, because of the single-atomic nature of the crystals involved. Here we present a convergent beam electron holographic technique which allows imaging of the stacking order in such heterostructures. Based on the interference of electron waves scattered on different crystals in the stack, this approach allows one to reconstruct the relative rotation, stretching, out-of-plane corrugation of the layers with atomic precision. Being holographic in nature, our approach allows extraction of quantitative information about the three-dimensional structure of the typical defects from a single image covering thousands of square nanometres. Furthermore, qualitative information about the defects in the stack can be extracted from the convergent diffraction patterns even without reconstruction - simply by comparing the patterns in different diffraction spots. We expect that convergent beam electron holography will be widely used to study the properties of van der Waals heterostructures.

The dielectric constant of interfacial water has been predicted to be smaller than that of bulk water (= 80) because the rotational freedom of water dipoles is expected to decrease near surfaces, yet experimental evidence is lacking. We report local capacitance measurements for water confined between two atomically-flat walls separated by various distances down to 1 nm. Our experiments reveal the presence of an interfacial layer with vanishingly small polarization such that its out-of-plane dielectric constant is only approximately 2. The electrically dead layer is found to be two to three molecules thick. These results provide much needed feedback for theories describing water-mediated surface interactions and behavior of interfacial water, and show a way to investigate the dielectric properties of other fluids and solids under extreme confinement.

Graphene oxide relative dielectric permittivity, both its real and imaginary parts, have been measured under various humidity conditions at GHz. It is demonstrated that the relative dielectric permittivity increases with increasing humidity due to water uptake. This electrical property of graphene oxide was used to create a battery-free wireless radio-frequency identification (RFID) humidity sensor by coating printed graphene antenna with the graphene oxide layer. The resonance frequency as well as the backscattering phase of such graphene oxide/graphene antenna become sensitive to the surrounding humidity and can be detected by the RFID reader. This enables batteryless wireless monitoring of the local humidity with digital identification attached to any location or item and paves the way for low-cost efficient sensors for Internet of Things applications.

Vertically stacked atomic layers from different layered crystals can be held together by van der Waals forces, which can be used for building novel heterostructures, offering a platform for developing a new generation of atomically thin, transparent and flexible devices. The performance of these devices is critically dependent on the layer thickness and the interlayer electronic coupling, influencing the hybridisation of the electronic states as well as charge and energy transfer between the layers. The electronic coupling is affected by the relative orientation of the layers as well as by the cleanliness of their interfaces. Here, we demonstrate an efficient method for monitoring interlayer coupling in heterostructures made from transition metal dichalcogenides using photoluminescence imaging in a bright-field optical microscope. The colour and brightness in such images are used here to identify mono- and few-layer crystals, and to track changes in the interlayer coupling and the emergence of interlayer excitons after thermal annealing in mechanically exfoliated flakes as well as a function of the twist angle in atomic layers grown by chemical vapour deposition. Material and crystal thickness sensitivity of the presented imaging technique makes it a powerful tool for characterisation of van der Waals heterostructures assembled by a wide variety of methods, using combinations of materials obtained through mechanical or chemical exfoliation and crystal growth.

The recent discovery of semiconducting two-dimensional materials has led to the prediction of a revolution in the field of optoelectronics, driven by the introduction of a series of new components that are just a few atoms thick. Key remaining challenges for producing practical devices from these materials lie in improving the coupling of light into and out of single atomic layers, and in making these layers robust to the influence of their surrounding environment. We present a solution to tackle both of these problems simultaneously, by deterministically placing a micro-lens directly onto the surface of these materials. These lenses are dynamically tuned to increase the coupling of light, whilst controlling chromatic aberration, before being set in place with UV light. We show that this approach enhances photoluminescence of tungsten diselenide (WSe2) monolayers by up to 300%, and nearly doubles the imaging resolution of the system. Furthermore, this solution fully encapsulates the monolayer, preventing it from physical damage and degradation in air. The optical solution we have developed could become a key enabling technology for the mass production of ultra-thin optical devices, such as quantum light emitting diodes.

Recent developments in fabrication of van der Waals heterostructures enable new type of devices assembled by stacking atomically thin layers of two-dimensional materials. Using this approach, we fabricate light-emitting devices based on a monolayer WSe$_2$, and also comprising boron nitride tunnelling barriers and graphene electrodes, and observe sharp luminescence spectra from individual defects in WSe$_2$ under both optical and electrical excitation. This paves the way towards the realization of electrically-pumped quantum emitters in atomically thin semiconductors. In addition we demonstrate tuning by more than 1 meV of the emission energy of the defect luminescence by applying a vertical electric field. This provides an estimate of the permanent electric dipole created by the corresponding electron-hole pair. The light-emitting devices investigated in our work can be assembled on a variety of substrates enabling a route to integration of electrically pumped single quantum emitters with existing technologies in nano-photonics and optoelectronics.

Optical imaging beyond the diffraction limit was one of the primary motivations for negative-index metamaterials, resulting in Pendry's perfect lens and the more attainable superlens. While these approaches offer sub-diffractional resolution, they do not provide a mechanism for magnification of the image. Hyperbolic (or indefinite-permittivity) metamaterials have been theoretically considered and experimentally demonstrated to provide simultaneously subdiffractive imaging and magnification; however, they are plagued with low efficiency and complex fabrication. In this work, we present theoretical and experimental studies of near-field optical imaging through a flat slab of the low-loss, natural hyperbolic material, hexagonal boron nitride (hBN). This thin hBN layer exhibits wavelength-dependent multifunctional operations, offering both an enhanced near-field imaging of single buried objects with down to lambda/32 resolution (0.4 um at lambda=12.8 um), as well as enabling an enlarged reconstruction of the geometric outline of the investigated objects. Both the excellent resolution and the multifunctional operation can be explained based on the volume-confined, wavelength-dependent propagation angle of Type I hyperbolic polaritons. Our results provide both the understanding of near-field imaging performance through this natural hyperbolic media, as well as inspire their exciting potential for guiding and sensing of light at an extreme sub-diffractional scale.

Quasi-two-dimensional (2D) films of layered metal-chalcogenides have attractive optoelectronic properties. However, photonic applications of thin films may be limited owing to weak light absorption and surface effects leading to reduced quantum yield. Integration of 2D films in optical microcavities will permit these limitations to be overcome owing to modified light coupling with the films. Here we present tunable microcavities with embedded monolayer MoS2 or few monolayer GaSe films. We observe significant modification of spectral and temporal properties of photoluminescence (PL): PL is emitted in spectrally narrow and wavelength-tunable cavity modes with quality factors up to 7400; PL life-time shortening by a factor of 10 is achieved, a consequence of Purcell enhancement of the spontaneous emission rate. This work has potential to pave the way to microcavity-enhanced light-emitting devices based on layered 2D materials and their heterostructures, and also opens possibilities for cavity QED in a new material system of van der Waals crystals.

Formation, evolution, and vanishing of bubbles are common phenomena in our nature, which can be easily observed in boiling or falling waters, carbonated drinks, gas-forming electrochemical reactions, etc. However, the morphology and the growth dynamics of the bubbles at nanoscale have not been fully investigated owing to the lack of proper imaging tools that can visualize nanoscale objects in liquid phase. Here we demonstrate, for the first time, that the nanobubbles in water encapsulated by graphene membrane can be visualized by in situ ultrahigh vacuum transmission electron microscopy (UHV-TEM), showing the critical radius of nanobubbles determining its unusual long-term stability as well as two distinct growth mechanisms of merging nanobubbles (Ostwald ripening and coalescing) depending on their relative sizes. Interestingly, the gas transport through ultrathin water membranes at nanobubble interface is free from dissolution, which is clearly different from conventional gas transport that includes condensation, transmission and evaporation. Our finding is expected to provide a deeper insight to understand unusual chemical, biological and environmental phenomena where nanoscale gas-state is involved.

Strongly anisotropic media where the principal components of the dielectric tensor have opposite signs are called hyperbolic. Such materials length exhibit unique nanophotonic properties enabled by the highly directional propagation of slow-light modes localized at deeply sub-diffractional scales. While artificial hyperbolic metamaterials have been demonstrated, they suffer from high plasmonic losses and require complex nanofabrication, which in turn induces the size-dependent limitations on optical confinement. The low-loss, mid-infrared, natural hyperbolic material, hexagonal boron nitride is an attractive alternative. We observe four series of multiple (up to seven) 'hyperbolic polariton' modes in boron nitride nanocones in two spectral bands. The resonant modes obey the predicted aspect ratio dependence and exhibit record-high quality factors (Q up to 283) in the strong confinement regime (lambda/86 in the smallest structures). These observations assert hexagonal boron nitride as a promising platform for studying novel regimes of light-matter interactions and nanophotonic device engineering.

Atomic resolution high angle annular dark field imaging of suspended, single-layer graphene, onto which the metals Cr, Ti, Pd, Ni, Al and Au atoms had been deposited was carried out in an aberration corrected scanning transmission electron microscope. In combination with electron energy loss spectroscopy, employed to identify individual impurity atoms, it was shown that nano-scale holes were etched into graphene, initiated at sites where single atoms of all the metal species except for gold come into close contact with the graphene. The e-beam scanning process is instrumental in promoting metal atoms from clusters formed during the original metal deposition process onto the clean graphene surface, where they initiate the hole-forming process. Our observations are discussed in the light of calculations in the literature, predicting a much lowered vacancy formation in graphene when metal ad-atoms are present. The requirement and importance of oxygen atoms in this process, although not predicted by such previous calculations, is also discussed, following our observations of hole formation in pristine graphene in the presence of Si-impurity atoms, supported by new calculations which predict a dramatic decrease of the vacancy formation energy, when SiOx molecules are present.