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Semiconductor nanowires have shown great potential for enabling ultra-compact lasers for integrated photonics platforms. Despite the impressive progress in developing nanowire lasers, their integration into Si photonics platforms remains challenging largely due to the use of III-V and II-VI semiconductors as gain media. These materials not only have high material costs, but also require inherently complex integration with Si-based fabrication processing, increasing overall costs and thereby limiting their large-scale adoption. Furthermore, these material-based nanowire lasers rarely emit above 2 um, which is a technologically important wavelength regime for various applications in imaging and quantum sensing. Recently, group-IV nanowires, particularly direct bandgap GeSn nanowires capable of emitting above 2 um, have emerged as promising cost-effective gain media for Si-compatible nanowire lasers, but there has been no successful demonstration of lasing from this seemingly promising nanowire platform. Herein, we report the experimental observation of lasing above 2 um from a single bottom-up grown GeSn nanowire. By harnessing strain engineering and optimized cavity designs simultaneously, the single GeSn nanowire achieves an amplified material gain that can sufficiently overcome minimized optical losses, resulting in a single-mode lasing with an ultra-low threshold of ~5.3 kW cm-2. Our finding paves the way for all-group IV mid-infrared photonic-integrated circuits with compact Si-compatible lasers for on-chip classical and quantum sensing and free-space communication.

Machine learning is attracting surging interest across nearly all scientific areas by enabling the analysis of large datasets and the extraction of scientific information from incomplete data. Data-driven science is rapidly growing, especially in X-ray methodologies, where advanced light sources and detection technologies accumulate vast amounts of data that exceed meticulous human inspection capabilities. Despite the increasing demands, the full application of machine learning has been hindered by the need for data-specific optimizations. In this study, we introduce a new deep-learning-based phase retrieval method for imperfect diffraction data. This method provides robust phase retrieval for simulated data and performs well on weak-signal single-pulse diffraction data from X-ray free-electron lasers. Moreover, the method significantly reduces data processing time, facilitating real-time image reconstructions that are crucial for high-repetition-rate data acquisition. Thus, this approach offers a reliable solution to the phase problem and is expected to be widely adopted across various research areas.

CMOS-compatible short- and mid-wave infrared emitters are highly coveted for the monolithic integration of silicon-based photonic and electronic integrated circuits to serve a myriad of applications in sensing and communications. In this regard, a group IV germanium-tin (GeSn) material epitaxially grown on silicon (Si) emerges as a promising platform to implement tunable infrared light emitters. Indeed, upon increasing the Sn content, the bandgap of GeSn narrows and becomes direct, making this material system suitable for developing an efficient silicon-compatible emitter. With this perspective, microbridge PIN GeSn LEDs with a small footprint of $1,520$ $\mu$m$^2$ are demonstrated and their operation performance is investigated. The spectral analysis of the electroluminescence emission exhibits a peak at $2.31$ $\mu$m and it red-shifts slightly as the driving current increases. It is found that the microbridge LED operates at a dissipated power as low as $10.8$ W at room temperature and just $3$ W at $80$ K. This demonstrated low operation power is comparable to that reported for LEDs having a significantly larger footprint reaching $10^6$ $\mu$m$^2$. The efficient thermal dissipation of the current design helped to reduce the heat-induced optical losses, thus enhancing light emission. Further performance improvements are envisioned through thermal and optical simulations of the microbridge design. The use of GeSnOI substrate for developing a similar device is expected to improve optical confinement for the realization of electrically driven GeSn lasers.

High-brightness X-ray pulses, as generated at synchrotrons and X-ray free electron lasers (XFEL), are used in a variety of scientific experiments. Many experimental testbeds require optical equipment, e.g Compound Refractive Lenses (CRLs), to be precisely aligned and focused. The lateral alignment of CRLs to a beamline requires precise positioning along four axes: two translational, and the two rotational. At a synchrotron, alignment is often accomplished manually. However, XFEL beamlines present a beam brightness that fluctuates in time, making manual alignment a time-consuming endeavor. Automation using classic stochastic methods often fail, given the errant gradient estimates. We present an online correction based on the combination of a generalized finite difference stencil and a time-dependent sampling pattern. Error expectation is analyzed, and efficacy is demonstrated. We provide a proof of concept by laterally aligning optics on a simulated XFEL beamline.

The second-order $\chi^{2}$ process underpins many important nonlinear optical applications in the field of classical and quantum optics. Generally, the $\chi^{2}$ process manifests itself only in a non-centrosymmetric dielectric medium via an anharmonic electron oscillation when driven by an intense optical field. Due to inversion symmetry, group-IV semiconductors like silicon (Si) and germanium (Ge) are traditionally not considered as ideal candidates for second-order nonlinear optics applications. Here, we report the experimental observation of the second-harmonic generation (SHG) in a Ge-on-insulator (GOI) sample under femtosecond optical pumping. Specially, we report the first-time measurement of the SHG signal from a GOI sample in the telecom S-band by pumping at $\sim$$3000$ nm.

Hanbury Brown and Twiss interferometry experiment based on second-order correlations was performed at PAL-XFEL facility. The statistical properties of the X-ray radiation were studied within this experiment. Measurements were performed at NCI beamline at 10 keV photon energy in various operation conditions: Self-Amplified Spontaneous Emission (SASE), SASE with a monochromator, and self-seeding regimes at 120 pC, 180 pC, and 200 pC electron bunch charge, respectively. Statistical analysis showed short average pulse duration from 6 fs to 9 fs depending on operation conditions. A high spatial degree of coherence of about 70-80% was determined in spatial domain for the SASE beams with the monochromator and self-seeding regime of operation. The obtained values describe the statistical properties of the beams generated at PAL-XFEL facility.

GeSn alloys have been regarded as a potential lasing material for a complementary metal-oxide-semiconductor (CMOS)-compatible light source. Despite their remarkable progress, all GeSn lasers reported to date have large device footprints and active areas, which prevent the realization of densely integrated on-chip lasers operating at low power consumption. Here, we present a 1D photonic crystal (PC) nanobeam with a very small device footprint of 7 ${\mu}m^2$ and a compact active area of ~1.2 ${\mu}m^2$ on a high-quality GeSn-on-insulator (GeSnOI) substrate. We also report that the improved directness in our strain-free nanobeam lasers leads to a lower threshold density and a higher operating temperature compared to the compressive strained counterparts. The threshold density of the strain-free nanobeam laser is ~18.2 kW cm$^{ -2}$ at 4 K, which is significantly lower than that of the unreleased nanobeam laser (~38.4 kW cm$^{ -2}$ at 4 K). Lasing in the strain-free nanobeam device persists up to 90 K, whereas the unreleased nanobeam shows a quenching of the lasing at a temperature of 70 K. Our demonstration offers a new avenue towards developing practical group-IV light sources with high-density integration and low power consumption.

GeSn alloys offer a promising route towards a CMOS compatible light source and the realization of electronic-photonic integrated circuits. One tactic to improve the lasing performance of GeSn lasers is to use a high Sn content, which improves the directness. Another popular approach is to use a low to moderate Sn content with either compressive strain relaxation or tensile strain engineering, but these strain engineering techniques generally require optical cavities to be suspended in air, which leads to poor thermal management. In this work, we develop a novel dual insulator GeSn-on-insulator (GeSnOI) material platform that is used to produce strain-relaxed GeSn microdisks stuck on a substrate. By undercutting only one insulating layer (i.e., Al2O3), we fabricate microdisks sitting on SiO2, which attain three key properties for a high-performance GeSn laser: removal of harmful compressive strain, decent thermal management, and excellent optical confinement. We believe that an increase in the Sn content of GeSn layers on our platform can allow achieving improved lasing performance.

The creation of pseudo-magnetic fields in strained graphene has emerged as a promising route to allow observing intriguing physical phenomena that would be unattainable with laboratory superconducting magnets. Scanning tunneling spectroscopy experiments have successfully measured the pseudo-Landau levels and proved the existence of pseudo-magnetic fields in various strained graphene systems. These giant pseudo-magnetic fields observed in highly deformed graphene can substantially alter the optical properties of graphene beyond a level that can be feasible with an external magnetic field, but the experimental signatures of the influence of such pseudo-magnetic fields have yet to be unveiled. Here, using time-resolved infrared pump-probe spectroscopy, we provide unambiguous evidence for ultra-slow carrier dynamics enabled by pseudo-magnetic fields in periodically strained graphene. Strong pseudo-magnetic fields of ~100 T created by non-uniform strain in graphene nanopillars are found to significantly decelerate the relaxation processes of hot carriers by more than an order of magnitude. Our finding presents unforeseen opportunities for harnessing the new physics of graphene enabled by pseudo-magnetic fields for optoelectronics and condensed matter physics.

GeSn alloys are promising candidates for complementary metal-oxide-semiconductor (CMOS)-compatible, tunable lasers. Relaxation of residual compressive strain in epitaxial GeSn has recently shown promise in improving the lasing performance. However, the suspended device configuration that has thus far been introduced to relax the strain is destined to limit heat dissipation, thus hindering the device performance. Herein, we demonstrate that strain-free GeSn microdisk laser devices fully released on Si outperform the canonical suspended devices. This approach allows to simultaneously relax the limiting compressive strain while offering excellent thermal conduction. Optical simulations confirm that, despite a relatively small refractive index contrast between GeSn and Si, optical confinement in strain-free GeSn optical cavities on Si is superior to that in conventional strain-free GeSn cavities suspended in the air. Moreover, thermal simulations indicate a negligible temperature increase in our device. Conversely, the temperature in the suspended devices increases substantially reaching, for instance, 120 K at a base temperature of 75 K under the employed optical pumping conditions. Such improvements enable increasing the operation temperature by ~40 K and reducing the lasing threshold by 30%. This approach lays the groundwork to implement new designs in the quest for room temperature GeSn lasers on Si.

(Si)GeSn semiconductors are finally coming of age after a long gestation period. The demonstration of device quality epi-layers and quantum-engineered heterostructures has meant that tunable all-group IV Si-integrated infrared photonics is now a real possibility. Notwithstanding the recent exciting developments in (Si)GeSn materials and devices, this family of semiconductors is still facing serious limitations that need to be addressed to enable reliable and scalable applications. The main outstanding challenges include the difficulty to grow high crystalline quality layers and heterostructures at the desired Sn content and lattice strain, preserve the material integrity during growth and throughout device processing steps, and control doping and defect density. Other challenges are related to the lack of optimized device designs and predictive theoretical models to evaluate and simulate the fundamental properties and performance of (Si)GeSn layers and heterostructures. This Perspective highlights key strategies to circumvent these hurdles and bring this material system to maturity to create far-reaching new opportunities for Si-compatible infrared photodetectors, sensors, and emitters for applications in free-space communication, infrared harvesting, biological and chemical sensing, and thermal imaging.

We extend the previous 30-band $k$$\cdot$$p$ model effectively employed for relaxed Ge$_{1-x}$Sn$_{x}$ alloy to the case of strained Ge$_{1-x}$Sn$_{x}$ alloy. The strain-relevant parameters for the 30-band $k$$\cdot$$p$ model are obtained by using linear interpolation between the values of single crystal of Ge and Sn that are from literatures and optimizations. We specially investigate the dependence of band-gap at $L$-valley and $\Gamma$-valley with different Sn composition under uniaxial and biaxial strain along [100], [110] and [111] directions. The good agreement between our theoretical predictions and experimental data validates the effectiveness of our model. Our 30-band $k$$\cdot$$p$ model and relevant input parameters successfully applied to relaxed and strained Ge$_{1-x}$Sn$_{x}$ alloy offers a powerful tool for the optimization of sophisticated devices made from such alloy.

The process of CO2 valorization, all the way from capture of CO2 to its electrochemical upgrade, requires significant inputs in each of the capture, upgrade, and separation steps. The gas phase CO2 feed following the capture-and-release stage and into the CO2 electroreduction stage produce a large waste of CO2, between 80 and 95% of CO2 is wasted due to carbonate formation or electrolyte crossover, that adds cost and energy consumption to the CO2 management aspect of the system. Here we report an electrolyzer that instead directly upgrades carbonate electrolyte from CO2 capture solution to syngas, achieving 100% carbon utilization across the system. A bipolar membrane is used to produce proton in situ, under applied potential, which facilitates CO2 releasing at the membrane:catalyst interface from the carbonate solution. Using an Ag catalyst, we generate pure syngas at a 3 to 1 H2 to CO ratio, with no CO2 dilution at the gas outlet, at a current density of 150 mA cm-2, and achieve a full cell energy efficiency of 35%. The direct carbonate cell was stable under a continuous 145 h of catalytic operation at ca. 180 mA cm-2. The work demonstrates that coupling CO2 electrolysis directly with a CO2 capture system can accelerate the path towards viable CO2 conversion technologies.

A full-zone 30-band $k$$\cdot$$p$ model is developed as an efficient and reliable tool to compute electronic band structure in Ge$_{1-x}$Sn$_{x}$ alloy. The model was first used to reproduce the electronic band structures in Ge and $\alpha$-Sn obtained with empirical tight binding and \textitab initio methods. Input parameters for the 30-band $k$$\cdot$$p$ model are carefully calibrated against prior empirical predications and experimental data. Important material properties such as effective mass for electrons and holes, Luttinger parameters, and density of states are obtained for Ge$_{1-x}$Sn$_{x}$ alloy with the composition range $0<x<0.3$. The 30-band $k$$\cdot$$p$ model that requires far less computing resources is a necessary capability for optimization of sophisticated devices made from Ge$_{1-x}$Sn$_{x}$ alloy with a large parameter space to explore.

The integration of efficient, miniaturized group IV lasers into CMOS architecture holds the key to the realization of fully functional photonic-integrated circuits. Despite several years of progress, however, all group IV lasers reported to date exhibit impractically high thresholds owing to their unfavorable bandstructures. Highly strained germanium with its fundamentally altered bandstructure has emerged as a potential low-threshold gain medium, but there has yet to be any successful demonstration of lasing from this seemingly promising material system. Here, we demonstrate a low-threshold, compact group IV laser that employs germanium nanowire under a 1.6% uniaxial tensile strain as the gain medium. The amplified material gain in strained germanium can sufficiently surmount optical losses at 83 K, thus allowing the first observation of multimode lasing with an optical pumping threshold density of ~3.0 kW cm^-^2. Our demonstration opens up a new horizon of group IV lasers for photonic-integrated circuits.

We report 3D coherent diffractive imaging of Au/Pd core-shell nanoparticles with 6 nm resolution on 5-6 femtosecond timescales. We measured single-shot diffraction patterns of core-shell nanoparticles using very intense and short x-ray free electron laser pulses. By taking advantage of the curvature of the Ewald sphere and the symmetry of the nanoparticle, we reconstructed the 3D electron density of 34 core-shell structures from single-shot diffraction patterns. We determined the size of the Au core and the thickness of the Pd shell to be 65.0 +/- 1.0 nm and 4.0 +/- 0.5 nm, respectively, and identified the 3D elemental distribution inside the nanoparticles with an accuracy better than 2%. We anticipate this method can be used for quantitative 3D imaging of symmetrical nanostructures and virus particles.

We present germanium microdisk optical resonators under a large biaxial tensile strain using a CMOS-compatible fabrication process. Biaxial tensile strain of ~0.7% is achieved by means of a stress concentration technique that allows the strain level to be customized by carefully selecting certain lithographic dimensions. The partial strain relaxation at the edges of a patterned germanium microdisk is compensated by depositing compressively stressed silicon nitride layer. Two-dimensional Raman spectroscopy measurements along with finite-element method simulations confirm a relatively homogeneous strain distribution within the final microdisk structure. Photoluminescence results show clear optical resonances due to whispering gallery modes which are in good agreement with finite-difference time-domain optical simulations. Our bandgap-customizable microdisks present a new route towards an efficient germanium light source for on-chip optical interconnects.

A silicon-compatible light source is the final missing piece for completing high-speed, low-power on-chip optical interconnects. In this paper, we present a germanium-based light emitter that encompasses all the aspects of potential low-threshold lasers: highly strained germanium gain medium, strain-induced pseudo-heterostructure, and high-Q optical cavity. Our light emitting structure presents greatly enhanced photoluminescence into cavity modes with measured quality factors of up to 2,000. The emission wavelength is tuned over more than 400 nm with a single lithography step. We find increased optical gain in optical cavities formed with germanium under high (>2.3%) tensile strain. Through quantitative analysis of gain/loss mechanisms, we find that free carrier absorption from the hole bands dominates the gain, resulting in no net gain even from highly strained, n-type doped germanium.

We theoretically investigate how the threshold of a Ge-on-Si laser can be minimized and how the slope efficiency can be maximized in presence of both biaxial tensile strain and n-type doping. Our finding shows that there exist ultimate limits beyond which point no further benefit can be realized through increased tensile strain or n-type doping. Here were quantify these limits, showing that the optimal design for minimizing threshold involves about 3.7% biaxial tensile strain and 2x1018 cm-3 n-type doping, whereas the optimal design for maximum slope efficiency involves about 2.3% biaxial tensile strain with 1x1019 cm-3 n-type doping. Increasing the strain and/or doping beyond these limits will degrade the threshold or slope efficiency, respectively.

We investigate the interaction of tin alloying with tensile strain and n-type doping for improving the performance of a Ge-based laser for on-chip optical interconnects. Using a modified tight-binding formalism that incorporates the effect of tin alloying on conduction band changes, we calculate how threshold current density and slope efficiency are affected by tin alloying in the presence of tensile strain and n-type doping. Our results show that while there exists a negative interaction between tin alloying and n-type doping, tensile strain can be effectively combined with tin alloying to dramatically improve the Ge gain medium in terms of both reducing the threshold and increasing the expected slope efficiency. Through quantitative modeling we find the best design to include large amounts of both tin alloying and tensile strain but only moderate amounts of n-type doping if researchers seek to achieve the best possible performance in a Ge-based laser.

We theoretically investigate the effect of <100> uniaxial strain on a Ge-on-Si laser using deformation potentials. We predict a sudden and dramatic ~200x threshold reduction upon applying sufficient uniaxial tensile strain to the Ge gain medium. This anomalous reduction is accompanied by an abrupt jump in the emission wavelength and is explained by how the light-hole band raises relative to the heavy-hole band due to uniaxial strain. Approximately 3.2% uniaxial strain is required to achieve this anomalous threshold reduction for 1x1019 cm-3 n-type doping, and a complex interaction between uniaxial strain and n-type doping is observed. This anomalous threshold reduction represents a substantial performance advantage for uniaxially strained Ge lasers relative to other forms of Ge band engineering such as biaxial strain or tin alloying. Achieving this critical combination of uniaxial strain and doping for the anomalous threshold reduction is dramatically more relevant to practical devices than realizing a direct band gap.

We theoretically investigate the impact of the defect-limited carrier lifetime on the performance of germanium (Ge) light sources, specifically LEDs and lasers. For Ge LEDs, we show that improving the material quality can offer even greater enhancements than techniques such as tensile strain, the leading approach for enhancing Ge light emission. Even for Ge that is so heavily strained that it becomes a direct bandgap semiconductor, the ~1 ns defect-limited carrier lifetime of typical epitaxial Ge limits the LED internal quantum efficiency to less than 10%. In contrast, if the epitaxial Ge carrier lifetime can be increased to its bulk value, internal quantum efficiencies exceeding 90% become possible. For Ge lasers, we show that the defect-limited lifetime becomes increasing important as tensile strain is introduced, and that this defect-limited lifetime must be improved if the full benefits of strain are to be realized. We conversely show that improving the material quality supersedes much of the utility of n-type doping for Ge lasers.

We demonstrate theoretically a strong local enhancement of the intensity of the in-plane microwave magnetic field in multilayered structures made from a magneto-insulating yttrium iron garnet (YIG) layer sandwiched between two non-magnetic layers with a high dielectric constant matching that of YIG. The enhancement is predicted for the excitation regime when the microwave magnetic field is induced inside the multilayer by the transducer of a stripline Broadband Ferromagnetic Resonance (BFMR) setup. By means of a rigorous numerical solution of the Landau-Lifshitz-Gilbert equation consistently with the Maxwell's equations, we investigate the magnetisation dynamics in the multilayer. We reveal a strong photon-magnon coupling, which manifests itself as anti-crossing of the ferromagnetic resonance (FMR) magnon mode supported by the YIG layer and the electromagnetic resonance mode supported by the whole multilayered structure. The frequency of the magnon mode depends on the external static magnetic field, which in our case is applied tangentially to the multilayer in the direction perpendicular to the microwave magnetic field induced by the stripline of the BFMR setup. The frequency of the electromagnetic mode is independent of the static magnetic field. Consequently, the predicted photon-magnon coupling is sensitive to the applied magnetic field and thus can be used in magnetically tuneable metamaterials based on simultaneously negative permittivity and permeability achievable thanks to the YIG layer. We also suggest that the predicted photon-magnon coupling may find applications in microwave quantum information systems.

Strain engineering has proven to be vital for germanium-based photonics, in particular light emission. However, applying a large permanent biaxial strain to germanium has been a challenge. We present a simple, CMOS-compatible technique to conveniently induce a large, spatially homogenous strain in microdisks patterned within ultrathin germanium nanomembranes. Our technique works by concentrating and amplifying a pre-existing small strain into the microdisk region. Biaxial strains as large as 1.11% are observed by Raman spectroscopy and are further confirmed by photoluminescence measurements, which show enhanced and redshifted light emission from the strained microdisks. Our technique allows the amount of biaxial strain to be customized lithographically, allowing the bandgaps of different microdisks to be independently tuned in a single mask process. Our theoretical calculations show that this platform can deliver substantial performance improvements, including a >200x reduction in the lasing threshold, to biaxially strained germanium lasers for silicon-compatible optical interconnects.

A structural understanding of whole cells in three dimensions at high spatial resolution remains a significant challenge and, in the case of X-rays, has been limited by radiation damage. By alleviating this limitation, cryogenic coherent diffraction imaging (cryo-CDI) could bridge the important resolution gap between optical and electron microscopy in bio-imaging. Here, we report for the first time 3D cryo-CDI of a whole, frozen-hydrated cell - in this case a Neospora caninum tachyzoite - using 8 keV X-rays. Our 3D reconstruction reveals the surface and internal morphology of the cell, including its complex, polarized sub-cellular architecture with a 3D resolution of ~75-100 nm, which is presently limited by the coherent X-ray flux and detector size. Given the imminent improvement in the coherent X-ray flux at the facilities worldwide, our work forecasts the possibility of routine 3D imaging of frozen-hydrated cells with spatial resolutions in the tens of nanometres.

Coherent diffraction imaging (CDI) using synchrotron radiation, X-ray free electron lasers (X-FELs), high harmonic generation, soft X-ray lasers, and optical lasers has found broad applications across several disciplines. An active research direction in CDI is to determine the structure of single particles with intense, femtosecond X-FEL pulses based on diffraction-before-destruction scheme. However, single-shot 3D structure determination has not been experimentally realized yet. Here we report the first experimental demonstration of single-shot 3D structure determination of individual nanocrystals using ~10 femtosecond X-FEL pulses. Coherent diffraction patterns are collected from high-index-faceted nanocrystals, each struck by a single X-FEL pulse. Taking advantage of the symmetry of the nanocrystal, we reconstruct the 3D structure of each nanocrystal from a single-shot diffraction pattern at ~5.5 nm resolution. As symmetry exists in many nanocrystals and virus particles, this method can be applied to 3D structure studies of such particles at nanometer resolution on femtosecond time scales.

We demonstrate room-temperature electroluminescence (EL) from light-emitting diodes (LED) on highly strained germanium (Ge) membranes. An external stressor technique was employed to introduce a 0.76% bi-axial tensile strain in the active region of a vertical PN junction. Electrical measurements show an on-off ratio increase of one order of magnitude in membrane LEDs compared to bulk. The EL spectrum from the 0.76% strained Ge LED shows a 100nm redshift of the center wavelength because of the strain-induced direct band gap reduction. Finally, using tight-binding and FDTD simulations, we discuss the implications for highly efficient Ge lasers.