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BaTiO3 is typically a strong n-type material with tuneable optoelectronic properties via doping and controlling the synthesis conditions. It has a wide band gap that can only harness the ultraviolet region of the solar spectrum. Despite significant progress, achieving visible-light absorbing BTO with tuneable carrier concentration has been challenging, a crucial requirement for many applications. In this work, a p-type BTO with visible-light absorption is realized via iridium doping. Detailed analysis using advanced spectroscopy tools and computational electronic structure analysis is used to rationalize the n- to p-type transition after Ir doping. Results offered mechanistic insight into the interplay between the dopant site occupancy, the dopant position within the band gap, and the defect chemistry affecting the carrier concentration. A decrease in the Ti3+ donor levels concentration and the mutually correlated oxygen vacancies upon Ir doping is attributed to the p-type behavior. Due to the formation of Ir3+ or Ir4+ in-gap energy levels within the forbidden region, the optical transition can be elicited from or to such levels resulting in visible-light absorption. This newly developed Ir-doped BTO can be a promising p-type perovskite-oxide with imminent applications in solar fuel generation, spintronics and optoelectronics.

Strontium titanate (SrTiO3) is widely used as a promising photocatalyst due to its unique band edge alignment with respect to the oxidation and reduction potential corresponding to oxygen evolution reaction (OER) and hydrogen evolution reaction (HER). However, further enhancement of the photocatalytic activity in this material could be envisaged through the effective control of oxygen vacancy states. This could substantially tune the photoexcited charge carrier trapping under the influence of elemental functionalization in SrTiO3, corresponding to the defect formation energy. The charge trapping states in SrTiO3 decrease through the substitutional doping in Ti sites with p-block elements like Aluminium (Al) with respect to the relative oxygen vacancies. With the help of electronic structure calculations based on density functional theory (DFT) formalism, we have explored the synergistic effect of doping with both Al and Iridium (Ir) in SrTiO3 from the perspective of defect formation energy, band edge alignment and the corresponding charge carrier recombination probability to probe the photoexcited charge carrier trapping that primarily governs the photocatalytic water splitting process. We have also systematically investigated the ratio-effect of Ir:Al functionalization on the position of acceptor levels lying between Fermi and conduction band in oxygen deficient SrTiO3, which governs the charge carrier recombination and therefore the corresponding photocatalytic efficiency.

We studied the recombination dynamics of charge carriers in organic bulk heterojunction solar cells made of the blend system poly(2,5-bis(3-dodecyl thiophen-2-yl) thieno[2,3-b]thiophene) (pBTCT-C12):[6,6]-phenyl-C61-butyric acid methyl ester (PC61BM) with a donor--acceptor ratio of 1:1 and 1:4. The techniques of charge carrier extraction by linearly increasing voltage (photo-CELIV) and, as local probe, time-resolved microwave conductivity (TRMC) were used. We observed a difference in the initially extracted charge carrier concentration in the photo-CELIV experiment by one order of magnitude, which we assigned to an enhanced geminate recombination due to a fine interpenetrating network with isolated phase regions in the 1:1 pBTCT-C12:PC61BM bulk heterojunction solar cells. In contrast, extensive phase segregation in 1:4 blend devices leads to an efficient polaron generation resulting in an increased short circuit current density of the solar cell. For both studied ratios a bimolecular recombination of polarons was found using the complementary experiments. The charge carrier decay order of above two for temperatures below 300 K can be explained by a release of trapped charges. This mechanism leads to a delayed bimolecular recombination processes. The experimental findings can be generalized to all polymer:fullerene blend systems allowing for phase segregation.

From electrodeless time-resolved microwave conductivity measurements, the efficiency of charge carrier generation, their mobility, and decay kinetics on photo-excitation were studied in arrays of Si nanowires grown by the vapor-liquid-solid mechanism. A large enhancement in the magnitude of the photoconductance and charge carrier lifetime are found depending on the incorporation of impurities during the growth. They are explained by the internal electric field that builds up, due to a higher doped sidewalls, as revealed by detailed analysis of the nanowire morphology and chemical composition.