Ions-induced Epitaxial Growth of Perovskite Nanocomposites for Highly Efficient Light-Emitting Diodes with EQE Exceeding 30%

Metal halide perovskites, a class of cost-effective semiconductor materials, are of great interest for modern and upcoming display technologies that prioritize the light-emitting diodes (LEDs) with high efficiency and excellent color purity. The prevailing approach to achieving efficient luminescence from pervoskites is enhancing exciton binding effect and confining carriers by reducing their dimensionality or grain size. However, splitting pervoskite lattice into smaller ones generates abundant boundaries in solid films and results in more surface trap states, needing exact passivation to suppress trap-assisted nonradiative losses. Here, an ions-induced heteroepitaxial growth method is employed to assembe perovskite lattices with different structures into large-sized grains to produce lattice-anchored nanocomposites for efficient LEDs with high color purity. This approach enables the nanocomposite thin films, composed of three-dimensional (3D) CsPbBr3 and its variant of zero-dimensional (0D) Cs4PbBr6, to feature significant low trap-assisted nonradiative recombination, enhanced light out-coupling with a corrugated surface, and well-balanced charge carrier transport. Based on the resultant 3D/0D perovskite nanocomposites, we demonstrate the perovskite LEDs achieving an remarkable external quantum efficiency of 31.0% at the emission peak of 521 nm with a narrow full width at half-maximum of only 18 nm. This research introduces a novel approach to the development of well-assembled nanocomposites for perovskite LEDs, demonstrating high efficiency comparable to that of state-of-the-art organic LEDs.