We propose a spintronic strain sensor capable of sensing strain with a sensitivity of 1E-13/sqrtHz at room temperature with an active sensing area of 1 cmE2 and power dissipation of 1 watt. This device measures strain by monitoring the change in the spin-polarized current in a parallel array of free standing nanowire spin valves when the array is subjected to compressive or tensile stress along the wires' length. The change in the current is linearly proportional to the strain, which makes the sensor relatively distortion-free. Such a sensor can be fabricated using a variety of techniques involving nanolithography, self assembly and epitaxial growth.
Submitted 26 Feb 2010 to Mesoscale and Nanoscale Physics [cond-mat.mes-hall] Published 01 Mar 2010 Updated 06 Apr 2011
Author comments: Will appear in Journal of Physics D: Applied Physics
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