A comprehensive model for metal-insulator-semiconductor (MIS) devices under dark
conditions which consists of a wide range of parameters has been developed. Parameters …

As an application of the authors previous model for MIS (metal-insulator-semiconductor)
devices, a detailed model for MIS solar cells has been developed that covers a wide range of …

A study of the electronic levels associated with an oxygen vacancy in lithium niobate (LiNbO
3 ) is reported. The semicontinuum model used in the F‐center problems in alkali halides is …

… One of the authors, Fat Duen Ho, would like to acknowledge his appreciation to the US Army
Space and Missile Defense Command and Physitron Inc., especially Mr. Alfred C. Kuehl, for …

A study of the electronic states associated with an oxygen vacancy in lithium tantalate (LiTaO
3 ) is reported. The F + center (one oxygen ion vacancy with one trapped electron) is …

Many inversion-layer metal-insulator-semiconductor (IL/MIS) solar cells have been fabricated.
There are around eighteen 1 cm(exp 2) IL/MIS solar cells which have efficiencies greater …

A two-dimensional Gummel model is developed to simulate the electrical behavior of silicon
MOSFET's in the temperature range of 77 to 300 degrees Kelvin. In this paper, first a short …

A combination empirical/theoretical n-channel metal-ferroelectric-semiconductor field-effect
transistor (MFSFET) model is developed. The model is based on a partition concept where …

We have calculated the offset voltage for a linearly graded pn junction and a step junction.
The offset voltage can be written as The correction term ΔV given by the above equation is in …

Wave functions for the ground states and the first excited states of the F + centers in lithium
niobate and lithium tantalate are calculated by using the point‐ion‐lattice model exclusive of …