Nonvolatile memory devices based on Au/graphene oxide nanocomposites with bilateral multilevel characteristics
DY Yun, TW Kim�- Carbon, 2015 - Elsevier
Current–voltage measurements on the Al/self-assembled Au nanoparticles inserted in
graphene-oxide (GO) layer/indium-tin-oxide/glass devices at 300 K showed bilateral current …
graphene-oxide (GO) layer/indium-tin-oxide/glass devices at 300 K showed bilateral current …
Enhancement of memory margins for stable organic bistable devices based on graphene-oxide layers due to embedded CuInS2 quantum dots
Current–voltage (I–V) curves for Al/CuInS 2 (CIS) quantum dots (QDs) embedded in
graphene-oxide layer/indium-tin-oxide devices at 300 K showed a current bistability with a …
graphene-oxide layer/indium-tin-oxide devices at 300 K showed a current bistability with a …
[HTML][HTML] Deep neural network for automatic image recognition of engineering diagrams
Piping and instrument diagrams (P&IDs) are a key component of the process industry; they
contain information about the plant, including the instruments, lines, valves, and control logic. …
contain information about the plant, including the instruments, lines, valves, and control logic. …
Design and optimization of a hydrogen supply chain using a centralized storage model
SK Seo, DY Yun, CJ Lee�- Applied energy, 2020 - Elsevier
This study involves the construction of a hydrogen supply chain optimization model using a
centralized storage model that combines and consolidates flows of hydrogen from different …
centralized storage model that combines and consolidates flows of hydrogen from different …
Electrical bistabilities and carrier transport mechanisms of write-once-read-many-times memory devices fabricated utilizing ZnO nanoparticles embedded in a�…
High-resolution transmission electron microscopy images showed that ZnO nanoparticles
were randomly distributed in a polystyrene (PS) layer. Current-voltage (IV) curves at 300 K for …
were randomly distributed in a polystyrene (PS) layer. Current-voltage (IV) curves at 300 K for …
Multi-objective optimization of hydrogen liquefaction process integrated with liquefied natural gas system
JE Bae, S Wilailak, JH Yang, DY Yun, U Zahid…�- Energy Conversion and�…, 2021 - Elsevier
Liquid hydrogen is gaining increasing attention owing to its high energy density as 10.1 MJ/L
compared to gaseous hydrogen as 5.6 MJ/L at 700 bar. However, the energy required for …
compared to gaseous hydrogen as 5.6 MJ/L at 700 bar. However, the energy required for …
Electrical stabilities and carrier transport mechanisms of flexible organic bistable devices based on CdSe-InP core-shell nanoparticle/polystyrene nanocomposites
Flexible organic bistable devices (OBDs) for the memory characteristics utilizing CdSe-InP
core-shell nanoparticle/polystyrene nanocomposites were fabricated on indium-tin-oxide-…
core-shell nanoparticle/polystyrene nanocomposites were fabricated on indium-tin-oxide-…
Memory stabilities and mechanisms of organic bistable devices with giant memory margins based on Cu2ZnSnS4 nanoparticles/PMMA nanocomposites
Organic bistable devices (OBDs) were fabricated utilizing nanocomposites made from a
blend of Cu 2 ZnSnS 4 (CZTS) nanoparticles within a polymethyl methacrylate (PMMA) matrix …
blend of Cu 2 ZnSnS 4 (CZTS) nanoparticles within a polymethyl methacrylate (PMMA) matrix …
Carrier transport mechanisms of multilevel nonvolatile memory devices with a floating gate consisting of hybrid organic/inorganic nanocomposites
Nonvolatile memory devices based on a poly(4-vinylphenol) (PVP) layer containing Cu 2
ZnSnS 4 (CZTS) nanoparticles were fabricated by using a simple spin-coating method. An …
ZnSnS 4 (CZTS) nanoparticles were fabricated by using a simple spin-coating method. An …
Charge trapping process of nonvolatile memory devices based on CdTe and CdTe–CdSe core-shell nanoparticles/poly (methylmethacrylate) nanocomposites
… Dong Yeol Yun; Dong Yeol Yun … Dong Yeol Yun, Jung Min Son, Tae Whan Kim, Sung
Woo Kim, Sang Wook Kim; Charge trapping process of nonvolatile memory devices based on …
Woo Kim, Sang Wook Kim; Charge trapping process of nonvolatile memory devices based on …