We present a true 3D 128Gb 2b/cell vertical-NAND (V-NAND) Flash. The chip accomplishes 50MB/s write throughput with 3K endurance for typical embedded�...

Sep 16, 2014 � Abstract: In this work, we present a true 3D 128 Gb 2 bit/cell vertical-NAND (V-NAND) Flash product for the first time.

The use of barrier-engineered materials and gate all-around structure in the 3D V-NAND cell exhibits advantages over 1 � nm planar NAND.

The chip accomplishes 50MB/s write throughput with 3K endurance for typical embedded applications such as mobile and personal computer. Also, extended endurance�...

The chip accomplishes 50 MB/s write throughput with 3 K endurance for typical embedded applications. Also, extended endurance of 35 K is achieved with 36 MB/s�...

Three-Dimensional 128 Gb MLC Vertical nand Flash Memory With 24-WL Stacked Layers and 50 MB/s High-Speed Programming.

This work proposes a novel NAND-based architecture to efficiently accelerate the vector-matrix multiplication for deep neural networks.

This review mainly focuses on the vertical 3D NAND technology adopted in the industry. The physical and logical scaling of 3D NAND will be discussed.

Feb 21, 2019 � This paper proposes a simulation method to model the program Vth distribution of 3-D vertical channel TLC/QLC charge-trapping NAND flash memory.

Park, Three-dimensional 128 Gb MLC vertical NAND flash memory with 24-WL stacked layers and 50 MB/s high-speed programming. IEEE J. Solid-State Circ. 50(1), (�...