Analytical model for thermal stress in silicon induced by coaxial Through-silicon-via (TSV) is proposed. ANSYS is employed to verify the proposed model.

Abstract: Analytical model for thermal stress in silicon induced by coaxial Through-silicon-via (TSV) is proposed. ANSYS is employed.

Thermo-mechanical performance of Cu and SiO2 filled coaxial through-silicon-via (TSV) ; Q4. Analytical models for the thermal strain and stress induced by�...

Thermo-mechanical performance of Cu and SiO2 filled coaxial through-silicon-via (TSV). F Wang, Z Zhu, Y Yang, X Liu, R Ding. IEICE Electronics Express 10 (24)�...

Analytical model for thermal stress in silicon induced by coaxial Through-silicon-via (TSV) is proposed. ANSYS is employed to verify the proposed model.

Aug 5, 2020 � This paper reports the design, fabrication, and test of a novel coaxial through-silicon-via (TSV) using low-κ SiO 2 insulator and fabricated on normal silicon�...

Thermo-mechanical performance of Cu and SiO2 filled coaxial through-silicon-via (TSV) � Study on thermal stress and keep-out zone induced by Cu and SiO2 filled�...

In this paper, a thermal-stress coupling optimization strategy for coaxial through silicon via (TSV) is developed based on the finite element method (FEM),�...

In this letter, an explicit analytical model for the stress induced by annular through-silicon-via (TSV) is developed according to the classical Lam� theory.

This review investigates the measurement methods employed to assess the geometry and electrical properties of through-silicon vias (TSVs)