We have investigated PtHf silicide formation utilizing a developed PtHf-alloy target to realize low contact resistivity for the first time.

We have investigated PtHf silicide formation utilizing a developed PtHf-alloy target to realize low contact resistivity for the first time.

We investigated the dopant segregation (DS) process for PtHf silicide to realize low contact resistivity. After the patterning of SiO2 hard mask and heavily�...

SUMMARY. We have investigated PtHf silicide formation utilizing a developed PtHf-alloy target to realize low contact resistivity for the first.

May 1, 2016 � We have investigated PtHf silicide formation utilizing a developed PtHf-alloy target to realize low contact resistivity for the first time.

Shun'ichiro Ohmi, Mengyi Chen, Xiaopeng Wu, Yasushi Masahiro: PtHf Silicide Formation Utilizing PtHf-Alloy Target for Low Contact Resistivity. IEICE Trans.

Oct 20, 2016 � We investigated the dopant segregation (DS) process for PtHf silicide to realize low contact resistivity. After the patterning of SiO2 hard�...

We investigated the dopant segregation (DS) process for PtHf silicide to realize low contact resistivity. After the patterning of SiO 2 hard mask and�...

We investigated the dopant segregation (DS) process for PtHf silicide to realize low contact resistivity. After the patterning of SiO2 hard mask and heavily�...

We investigated the dopant segregation (DS) process for PtHf silicide to realize low contact resistivity. After the patterning of SiO2 hard mask and.