The combination of device speed (f/sub T/, f/sub max/ > 150 GHz) and breakdown voltage (V/sub bceo/ > 8 V) makes the double heterojunction bipolar InP-bas.

150 GHz) and breakdown voltage ( bceo. 8 V) makes the double heterojunction bipolar InP-based transistor (D-HBT) an attractive technology to implement the�...

Nov 14, 2013 � The combination of device speed (fT, fmax > 150 GHz) and breakdown voltage (Vbceo > 8 V) makes the double heterojunction bipolar InP-based�...

Dive into the research topics of 'InP D-HBT IC's for 40 Gb/s and higher bitrate lightwave tranceivers'. Together they form a unique fingerprint.

Dive into the research topics of 'InP D-HBT ICs for 40-Gb/s and higher bitrate lightwave transceivers'. Together they form a unique fingerprint.

InP D-HBT ICs for 40-Gb/s and higher bitrate lightwave transceivers. October 2002; IEEE Journal of Solid-State Circuits 2(9):1152 - 1159. 2(9):1152 - 1159. DOI�...

For 40-Gb/s driver applications, the only devices that have so far demonstrated the requisite characteristics are GaAs pseudomorphic high electron mobility�...

Sep 1, 2002 � Baeyens Y. et al. InP D-HBT ICs for 40-Gb/s and higher bitrate lightwave transceivers // IEEE Journal of Solid-State Circuits. 2002. Vol. 2. No.

Abstract. — In this paper, we report the achieved performance of devices and integrated circuits (ICs) using a manufacturable InP DHBT-based technology.

The design and performance of an InGaAs/InP transimpedance amplifier and post amplifier for 40 Gb/s receiver applications are presented. We fabricated the.