The fabricated devices exhibited a very low contact resistance of 0.183 Ω•mm and achieved very good on-state performance with a high maximum drain current (I d,�...
May 26, 2024 � The obtained dependences are described using a model of current flow via metal shunts associated with dislocations, the current being limited by�...
Results revealed this new type of alloy ohmic contact could improve the InAlN/GaN HEMTs performance by reducing the contact resistance, which shows great�...
InAlN/GaN HEMTs on Si with 0.18-Ω�mm Contact Resistance and. 2.1-A/mm Drain Current Density ... achieved a low contact resistance of 0.14 Ω�mm and 0.1. Ω�mm�...
InAlN/GaN HEMTs on Si with 0.18-Ω•mm Contact Resistance and 2.1-A/mm Drain Current Density. 2021 IEEE 14th International Conference on ASIC (ASICON). 2021-10�...
InAlN/GaN HEMTs on Si with 0.18-Ω•mm Contact Resistance and 2.1-A/mm Drain Current Density. Conference Paper. Full-text available. Oct 2021. Yang�...
Jul 20, 2017 � maximum drain current, ∼1 A mm ; Hall carrier density, ∼1.6 � 1013 cm ; Hall electron mobility, ∼1290 cm2 V−1 s ; sheet resistance, ∼301 Ω sq�...
Dec 21, 2015 � ... resistance of 185 Ω/sq. at an ohmic annealing temperature of 800 �C. The as-fabricated HEMT exhibited maximum drain current density and�...
Oct 6, 2022 � ... contacts. The ohmic contact resistance is 0.3 Ω mm. An oxygen plasma treatment was then applied to form the oxide layer on top of the InAlN�...
Missing: 0.18- 2.1-
The N-polar GaN/InAlN HEMT achieved a maximum drain current density of 2.64 A/mm without quiescent bias stress. As shown in Fig. 3., low current collapse is�...
Missing: Si 0.18- 2.1-