In this work, we perform systematic and deep understanding of the interplay between polarization switching and charge trapping (CT)

Abstract—In this work, we perform systematic and deep understanding of the interplay between polarization switching and charge trapping (CT) for both�...

The negative capacitance is believed to be a transient phenomenon because a strong polarization switching is needed for the steep slope. We found that the sub-�...

Jul 28, 2024 � First Study of the Charge Trapping Aggravation Induced by Anti-Ferroelectric Switching in the MFIS Stack. Conference Paper. Jun 2023.

First study of the charge trapping aggravation induced by anti-ferroelectric switching in the MFIS stack. Z Zhou, L Jiao, Z Zheng, X Wang, D Zhang, K Ni, X�...

Gong, "First Study of the Charge Trapping Aggravation. Induced by Anti-Ferroelectric Switching in the MFIS. Stack," in 2023 IEEE Symposium on VLSI Technology.

In this paper, we review the ultrafast direct measurement on the transient ferroelectric polarization switching in hafnium zirconium oxide with crossbar metal-�...

May 27, 2021 � Investigation of Charge Trapping Aggravation Induced by Antiferroelectric Switching With a Unified Ferroelectric and Antiferroelectric Model.

Investigation of Charge Trapping Aggravation Induced by Antiferroelectric Switching With a Unified Ferroelectric and Antiferroelectric Model ... MFIS stack�...

Aug 12, 2019 � In this paper, we study the impact of scaling on the memory performance of FeFET devices employing Si:HfO2 ferroelectric films. The operation�...