The LNA achieves an ultra-low NF of 0.65dB, a power gain of 19.2dB, an output P1dB of +10dBm, while consuming 5.9mA from 2.8V supply. The LNA is housed in a 6-�...
An ESD-protected GNSS LNA, implemented in 0.18μm SOI CMOS process, uses only one external series inductor as input matching and achieves an ultra-low NF of�...
Abstract— an ESD-protected GNSS LNA, implemented in. 0.18μm SOI CMOS process, uses only one external series inductor as input matching.
Fei Song, Sam Chun-Geik Tan, Osama Shana'a : An ultra-low-cost ESD-protected 0.65dB NF +10dBm OP1dB GNSS LNA in 0.18-μm SOI CMOS. A-SSCC 2014: 341-344.
An ESD-protected GNSS LNA, implemented in 0.18μm SOI CMOS process, uses only one external series inductor as input matching. The input common-source transistor�...
IEEE Asian Solid-State Circuits Conference 2014
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An Ultra-Low-Cost ESD-Protected 0.65dB NF +10dBm OP1dB GNSS LNA in 0.18-Um SOI CMOS. FeiSong1, Chun Geik Tan2, Osama Shanaa1. 1Mediatek USA Inc., United�...
An ultra-low-cost ESD-protected 0.65dB NF +10dBm OP1dB GNSS LNA in 0.18-μm SOI CMOS � A frequency-reconfigurable multi-standard 65nm CMOS digital transmitter�...
An ultra-low-cost ESD-protected 0.65dB NF +10dBm OP1dB GNSS LNA in 0.18-μm SOI CMOS � Fei SongChun-Geik TanO. Shana'a. Engineering. 2014 IEEE Asian Solid-State�...
In this paper, two-stages low noise amplifier (LNA) based on common-source with feedback topology was designed using ALGAN/GAN 0.25um high electron mobility�...
TL;DR: In this paper, two K-band low-noise amplifiers (LNAs) in 65-nm CMOS using the proposed RF junction varactors as the ESD protection devices are presented.