Jul 18, 2022 � This THA is based on a base-collector (bc) switching diode architecture and achieves a −3 dB bandwidth of 35 GHz at a sampling rate of 30 GSa/s.
This THA is based on a base-collector (b-c) switching diode architecture and achieves a −3 dB bandwidth of 35 GHz at a sampling rate of 30 GSa/s. For the first�...
This THA is based on a base-collector (b-c) switching diode architecture and achieves a −3 dB bandwidth of 35 GHz at a sampling rate of 30 GSa/s. For the first�...
A 35-GHz Bandwidth 30 GSa/s InP Track-and-Hold Amplifier Using Enhanced fT-Doubler Technique � Engineering, Physics. IEEE Transactions on Circuits and Systems II�...
The amplifier based on the f T -doubler cell is suited for both high output power (proportional to the number of transistors) and high-frequency response. ... .
A 35-GHz Bandwidth 30 GSa/s InP Track-and-Hold Amplifier Using Enhanced fT-Doubler Technique � Engineering, Physics. IEEE Transactions on Circuits and Systems II�...
Nov 8, 2023 � A broadband InP track-and-hold amplifier using ... A 35-GHz Bandwidth 30 GSa/s InP Track-and-Hold Amplifier Using Enhanced fT-Doubler Technique.
4. A 35-GHz Bandwidth 30 GSa/s InP Track-and-Hold Amplifier Using Enhanced f T -Doubler Technique;IEEE Transactions on Circuits and Systems II: Express�...
This paper presents a broadband fully differential amplifier using a 0.8-μm InP DHBT process, exhibiting a bandwidth exceeding 8 GHz from DC and achieves a�...
A 35-GHz Bandwidth 30 GSa/s InP Track-and-Hold Amplifier Using Enhanced f(T)-Doubler Technique. IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-EXPRESS BRIEFS�...