Sep 1, 2020 � A 143.2–168.8-GHz signal source with 5.6 dBm peak output power in a 130-nm SiGe BiCMOS process ... Article PDF. Download to read the full article�...
A 143.2–168.8-GHz signal source with 5.6 dBm peak output power in a 130-nm SiGe BiCMOS process. Peigen ZHOU, Jixin CHEN*, Pinpin YAN*, Zhigang PENG, Debin�...
Due to the low maximum oscillation frequency (fmax) of the silicon-based process, it is challenging to directly generate THz signal.
Abstract A 143.2-168.8 GHz signal source with 5.6 dBm peak output power at 159 GHz and corresponding. -94 dBc/Hz @ 1 MHz phase noise is reported.
Sep 1, 2020 � The measured output power vs. the tuning range is plotted in Figure 1(g). The signal source achieves a measured peak output power of 5.6 dBm at�...
A 143.2–168.8-GHz signal source with 5.6 dBm peak output power in a 130-nm SiGe BiCMOS process. Authors. Peigen Zhou � Jixin Chen � Pinpin Yan � Zhigang Peng�...
This chip achieves a measured peak output power of 5.6 dBm at 159 GHz, and the output frequency tuning range (TR) is from 143.2 to 168.8 GHz with -94 dBc/Hz @ 1�...
A 143.2–168.8-GHz signal source with 5.6 dBm peak output power in a 130-nm SiGe BiCMOS process � Engineering, Physics. Science China Information Sciences � 2020.
A 143.2–168.8-GHz signal source with 5.6 dBm peak output power in a 130-nm SiGe BiCMOS process � Engineering, Physics. Science China Information Sciences � 2020.
... Output Power Signal Sources in 130-nm SiGe BiCMOS Process ... A 143.2–168.8-GHz signal source with 5.6 dBm peak output power in a 130-nm SiGe BiCMOS process.
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