A phase-transition random-access memory (PRAM) that uses chalcogenide alloy (GST:Ge2Sb2Te5), is programmed by resistive heating with current pulses that�...
Abstract: A nonvolatile 64-Mb 1T1R phase-transition random access memory (PRAM) has been developed by fully integrating chalcogenied storage material (GST:�...
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A non-volatile 64 Mb phase-transition RAM is developed by fully integrating a chalcogenide alloy GST (Ge<sub>2</sub>Sb<sub>2</sub>Te<sub>5</sub>) into 0.18�...
Aug 26, 2015 � A nonvolatile 64-Mb 1T1R phase-transition random access memory (PRAM) has been developed by fully integrating chalcogenied storage material�...
A phase-transition random-access memory (PRAM) that uses chalcogenide alloy (GST:Ge2Sb2Te5), is programmed by resistive heating with current pulses that�...
A 0.18-μm 3.0-V 64-Mb nonvolatile phase-transition random access memory (PRAM). Author: Cho, WY. Cho, BH ; Choi, BG ; Oh, HR ; Kang, SB ; Kim, KS ; Kim, KH�...
2004 IEEE INTERNATIONAL SOLID-STATE CIRCUITS CONFERENCE, DIGEST OF TECHNICAL PAPERS. A 0.18μm 3.0V 64Mb non-volatile phase-transition random-access memory (PRAM)�...
CiNii Labs, CiNii's experimental service public site, has been released. A 0.18-um 3.0V 64 Mb Nonvolatile Phase-Transition Random Access Memory (PRAM).
... non-volatile ... Cho et al., "A 0.18-mum 3.0-V 64-Mb Nonvolatile Phase-Transition Random Access memory (PRAM) ... Stefan Lai, "OUM a 180 nm Nonvolatile Memory Cell�...
A phase-transition random-access memory (PRAM) that uses chalcogenide alloy (GST:Ge2Sb2Te5), is programmed by resistive heating with current pulses that drive�...