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Xiaorong Luo
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2020 – today
- 2024
- [j11]Xintong Xie, Shuxiang Sun, Zhijia Zhao, Pengfei Zhang, Jie Wei, Xin Zhou, Jingyu Shen, Jinpeng Qiu, Xiaorong Luo:
Improvement of reverse conduction characteristic and single event effect for a novel vertical GaN field effect transistor with an integrated MOS-channel diode. Microelectron. J. 144: 106091 (2024) - [j10]Chengtao Luo, Cheng Yang, Zhijia Zhao, Xintong Xie, Yuxi Wei, Jie Wei, Jingyu Shen, Jinpeng Qiu, Xiaorong Luo:
Novel high-voltage GaN CAVET with high threshold voltage and low reverse conduction loss. Microelectron. J. 148: 106195 (2024) - [j9]Xiaorong Luo, Linyao Hao, Yuxi Wei, Kaiwei Dai, Xiaosong Peng, Zhuolin Jiang, Yuxin Wu:
High breakdown voltage β-Ga2O3 Schottky barrier diode with fluorine-implanted termination. Microelectron. J. 150: 106269 (2024) - 2023
- [j8]Zhijia Zhao, Yuxi Wei, Tao Sun, Kemeng Yang, Jie Wei, Yanjiang Jia, Siyu Deng, Xiaorong Luo, Bo Zhang:
High voltage GaN vertical FinFET with a compatible integrated fin diode for low reverse conduction loss. Microelectron. J. 136: 105781 (2023) - 2022
- [j7]Xiaorong Luo, Anmin Mao:
Sign-changing solutions to the critical Choquard equation. Appl. Math. Lett. 132: 108213 (2022) - [j6]Xiaorong Luo, Junyue Huang, Xu Song, Qinfeng Jiang, Jie Wei, Jian Fang, Fei Yang:
Novel SiC SBD-wall-integrated trench MOSFET with a semi-superjunction and split trench gate. Sci. China Inf. Sci. 65(6): 1-2 (2022) - 2021
- [j5]Xin Liu, Yuhong Lei, Xiaorong Luo, Xiangzeng Wang, Kaiyuan Chen, Ming Cheng, Jintao Yin:
TOC determination of Zhangjiatan shale of Yanchang formation, Ordos Basin, China, using support vector regression and well logs. Earth Sci. Informatics 14(2): 1033-1045 (2021)
2010 – 2019
- 2019
- [j4]Fu Peng, Chao Yang, Siyu Deng, Dongya Ouyang, Bo Zhang, Jie Wei, Xiaorong Luo:
Simulation of a high-performance enhancement-mode HFET with back-to-back graded AlGaN layers. Sci. China Inf. Sci. 62(6): 62403:1-62403:11 (2019) - 2018
- [j3]Chao Yang, Xiaorong Luo, Siyu Deng, Fu Peng, Bo Zhang:
High-voltage trench-gate hole-gas enhancement-mode HEMT with multi-conduction channels. Sci. China Inf. Sci. 61(6): 062402:1-062402:10 (2018) - 2017
- [c1]Xiaorong Luo, Weiwei Ge, Bo Zhang:
Ultralow power loss integratable high-voltage MOSFETs. ASICON 2017: 468-471 - 2016
- [j2]Jiayun Xiong, Chao Yang, Jie Wei, Junfeng Wu, Bo Zhang, Xiaorong Luo:
Novel high voltage RESURF AlGaN/GaN HEMT with charged buffer layer. Sci. China Inf. Sci. 59(4): 042410:1-042410:10 (2016) - 2013
- [j1]Jie Fan, Xiaorong Luo, Bo Zhang, Zhaoji Li:
Novel High voltage silicon-on-insulator Device with Composite dielectric buried Layer. J. Circuits Syst. Comput. 22(10) (2013)
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