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2020 – today

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2023
[c5]
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  dblp key:
  - conf/icce-tw/YangMCCLL23
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  - https://dblp.org/rec/conf/icce-tw/YangMCCLL23
Xiu-Yuan Yang, Xing-Chen Mai, Shen-Li Chen, Yu-Jie Chung, Jhong-Yi Lai, Ting-En Lin:
ESD-capability Study of High-voltage nLDMOSs with out the Drift Region DPW Effect. ICCE-Taiwan 2023: 223-224
2022
[c4]
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  - conf/icce-tw/LaiCLMC22
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Jhong-Yi Lai, Shen-Li Chen, Zhi-Wei Liu, Xing-Chen Mai, Yu-Jie Chung:
ESD Capability Analysis of High-voltage nLDMOSs by the Bulk Terminal Modulation. ICCE-TW 2022: 71-72
[c3]
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  - conf/icce-tw/LiuCLMC22
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Zhi-Wei Liu, Shen-Li Chen, Jhong-Yi Lai, Xing-Chen Mai, Yu-Jie Chung:
An Investigation of ESD-Enhancement by the Drain-side Embedded SCR Area Modulation for HV pLDMOSs. ICCE-TW 2022: 73-74
2021
[c2]
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Shi-Zhe Hong, Shen-Li Chen, Tien-Yu Lan, Yu-Jie Zhou, Zhi-Wei Liu, Jhong-Yi Lai:
ESD-Immunity Impact of HV pLDMOS with Drain-side Embedded Horizontal P-type Schottky Modulations. ICCE-TW 2021: 1-2
[c1]
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  - conf/icce-tw/LanCZHLL21
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Tien-Yu Lan, Shen-Li Chen, Yu-Jie Zhou, Shi-Zhe Hong, Jhong-Yi Lai, Zhi-Wei Liu:
Holding-voltage Improvement of UHV Circular nLDMOS Transistors by the Drain-side SCR Engineering. ICCE-TW 2021: 1-2

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