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ORCIDMicroelectronics Reliability, Volume 69
Volume 69, February 2017
- Adelmo Ortiz-Conde
, Andrea Sucre-González, Fabián Zárate-Rincón, Reydezel Torres-Torres, Roberto S. Murphy-Arteaga, Juin J. Liou, Francisco J. García-Sánchez:
A review of DC extraction methods for MOSFET series resistance and mobility degradation model parameters. 1-16 - Erping Deng, Zhibin Zhao, Peng Zhang, Yongzhang Huang, Jinyuan Li:
Optimization of the thermal contact resistance within press pack IGBTs. 17-28 - Karthikeyan Venkitusamy, Sanjeevikumar Padmanaban, Michael G. Pecht, Abhishek Awasthi, Rajasekar Selvamuthukumaran:
A modified boost rectifier for elimination of circulating current in power factor correction applications. 29-35 - Cong Nguyen Dao, Abdallah El Kass, Mostafa Rahimi Azghadi, Craig T. Jin, Jonathan Scott, Philip Heng Wai Leong:
An enhanced MOSFET threshold voltage model for the 6-300 K temperature range. 36-39 - N. Shiwakoti, A. Bobby, K. Asokan, Bobby Antony:
The role of electronic energy loss in SHI irradiated Ni/oxide/n-GaP Schottky diode. 40-46 - Adam Dobri, Simon Jeannot, Fausto Piazza, Carine Jahan, Jean Coignus, Luca Perniola, Francis Balestra:
Development and application of the Oxide Stress Separation technique for the measurement of ONO leakage currents at low electric fields in 40 nm floating gate embedded-flash memory. 47-51 - Shiva Taghipour, Rahebeh Niaraki Asli:
Aging comparative analysis of high-performance FinFET and CMOS flip-flops. 52-59 - Munkhsaikhan Zumuukhorol, Zagarzusem Khurelbaatar, Shim-Hoon Yuk, Jonghan Won, Sungnam Lee, Chel-Jong Choi:
Effects of finger dimension on low-frequency noise and optoelectronic properties of Ge metal-semiconductor-metal photodetectors with interdigitated Pt finger electrodes. 60-65 - Aleksandra Fortier, Michael G. Pecht:
A perspective of the IPC report on lead-free electronics in military/aerospace applications. 66-70 - K. H. Song, J. S. Jang:
Semiconductor package qualification based on the swelling temperature. 71-79 - Min-Jung Kim, Ho-Kyung Kim:
Effects of temperature and span amplitude on fretting corrosion behavior of tin-plated electrical contacts. 80-87 - Hosung Lee, Sanghyeon Baeg, Nelson Hua, Shi-Jie Wen:
Temporal and frequency characteristic analysis of margin-related failures caused by an intermittent nano-scale fracture of the solder ball in a BGA package device. 88-99 - Saqib A. Khan, Chul Seung Lim, GeunYong Bak, Sanghyeon Baeg, Soonyoung Lee:
An alternative approach to measure alpha-particle-induced SEU cross-section for flip-chip packaged SRAM devices: High energy alpha backside irradiation. 100-108 - Ramin Rajaei:
Single event double node upset tolerance in MOS/spintronic sequential and combinational logic circuits. 109-114 - Ibrahim Mezzah, Hamimi Chemali, Omar Kermia:
Emulation-based fault analysis on RFID tags for robustness and security evaluation. 115-125 - Shanshan Liu, Pedro Reviriego, Alfonso Sánchez-Macián, Juan Antonio Maestro, Liyi Xiao:
Comments on "Extend orthogonal Latin square codes for 32-bit data protection in memory applications" Microelectron. Reliab. 63 278-283 (2016). 126-129
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