Showing 1–20 of 20 results for author: van Aert, S

Improved precision and accuracy of electron energy-loss spectroscopy quantification via fine structure fitting with constrained optimization

Authors: Daen Jannis, Wouter Van den Broek, Zezhong Zhang, Sandra Van Aert, Jo Verbeeck

Abstract: By working out the Bethe sum rule, a boundary condition that takes the form of a linear equality is derived for the fine structure observed in ionization edges present in electron energy-loss spectra. This condition is subsequently used as a constraint in the estimation process of the elemental abundances, demonstrating starkly improved precision and accuracy and reduced sensitivity to the number… ▽ More By working out the Bethe sum rule, a boundary condition that takes the form of a linear equality is derived for the fine structure observed in ionization edges present in electron energy-loss spectra. This condition is subsequently used as a constraint in the estimation process of the elemental abundances, demonstrating starkly improved precision and accuracy and reduced sensitivity to the number of model parameters. Furthermore, the fine structure is reliably extracted from the spectra in an automated way, thus providing critical information on the sample's electronic properties that is hard or impossible to obtain otherwise. Since this approach allows dispensing with the need for user-provided input, a potential source of bias is prevented. △ Less

Submitted 19 August, 2024; originally announced August 2024.

Comments: 15 pages, 9 figures

Towards atom counting from first moment STEM images: methodology and possibilities

Authors: Yansong Hao, Annick De Backer, Scott David Findlay, Sandra Van Aert

Abstract: Through a simulation-based study we develop a statistical model-based quantification method for atomic resolution first moment scanning transmission electron microscopy (STEM) images. This method uses the uniformly weighted least squares estimator to determine the unknown structure parameters of the images and to isolate contributions from individual atomic columns. In this way, a quantification o… ▽ More Through a simulation-based study we develop a statistical model-based quantification method for atomic resolution first moment scanning transmission electron microscopy (STEM) images. This method uses the uniformly weighted least squares estimator to determine the unknown structure parameters of the images and to isolate contributions from individual atomic columns. In this way, a quantification of the projected potential per atomic column is achieved. Since the integrated projected potential of an atomic column scales linearly with the number of atoms it contains, it can serve as a basis for atom counting. The performance of atom counting from first moment STEM imaging is compared to that from traditional HAADF STEM in the presence of noise. Through this comparison, we demonstrate the advantage of first moment STEM images to attain more precise atom counts. Finally, we compare the integrated intensities extracted from first-moment images of a wedge-shaped sample to those values from the bulk crystal. The excellent agreement found between these values proves the robustness of using bulk crystal simulations as a reference library. This enables atom counting for samples with different shapes by comparison with these library values. △ Less

Submitted 5 August, 2024; originally announced August 2024.

Comments: 31 pages in total (Supporting info added at the end of manuscript)

Relativistic EELS scattering cross-sections for microanalysis based on Dirac solutions

Authors: Zezhong Zhang, Ivan Lobato, Hamish Brown, Dirk Lamoen, Daen Jannis, Johan Verbeeck, Sandra Van Aert, Peter D. Nellist

Abstract: The rich information of electron energy-loss spectroscopy (EELS) comes from the complex inelastic scattering process whereby fast electrons transfer energy and momentum to atoms, exciting bound electrons from their ground states to higher unoccupied states. To quantify EELS, the common practice is to compare the cross-sections integrated within an energy window or fit the observed spectrum with th… ▽ More The rich information of electron energy-loss spectroscopy (EELS) comes from the complex inelastic scattering process whereby fast electrons transfer energy and momentum to atoms, exciting bound electrons from their ground states to higher unoccupied states. To quantify EELS, the common practice is to compare the cross-sections integrated within an energy window or fit the observed spectrum with theoretical differential cross-sections calculated from a generalized oscillator strength (GOS) database with experimental parameters. The previous Hartree-Fock-based and DFT-based GOS are calculated from Schrödinger's solution of atomic orbitals, which does not include the full relativistic effects. Here, we attempt to go beyond the limitations of the Schrödinger solution in the GOS tabulation by including the full relativistic effects using the Dirac equation within the local density approximation, which is particularly important for core-shell electrons of heavy elements with strong spin-orbit coupling. This has been done for all elements in the periodic table (up to Z = 118) for all possible excitation edges using modern computing capabilities and parallelization algorithms. The relativistic effects of fast incoming electrons were included to calculate cross-sections that are specific to the acceleration voltage. We make these tabulated GOS available under an open-source license to the benefit of both academic users as well as allowing integration into commercial solutions. △ Less

Submitted 16 May, 2024; originally announced May 2024.

Comments: 52 pages, 8 figures

In-situ Plasma Studies using a Direct Current Microplasma in a Scanning Electron Microscope

Authors: Lukas Grünewald, Dmitry Chezganov, Robin De Meyer, Andrey Orekhov, Sandra Van Aert, Annemie Bogaerts, Sara Bals, Jo Verbeeck

Abstract: Microplasmas can be used for a wide range of technological applications and to improve our understanding of fundamental physics. Scanning electron microscopy, on the other hand, provides insights into the sample morphology and chemistry of materials from the mm-down to the nm-scale. Combining both would provide direct insight into plasma-sample interactions in real-time and at high spatial resolut… ▽ More Microplasmas can be used for a wide range of technological applications and to improve our understanding of fundamental physics. Scanning electron microscopy, on the other hand, provides insights into the sample morphology and chemistry of materials from the mm-down to the nm-scale. Combining both would provide direct insight into plasma-sample interactions in real-time and at high spatial resolution. Up till now, very few attempts in this direction have been made, and significant challenges remain. This work presents a stable direct current glow discharge microplasma setup built inside a scanning electron microscope. The experimental setup is capable of real-time in-situ imaging of the sample evolution during plasma operation and it demonstrates localized sputtering and sample oxidation. Further, the experimental parameters such as varying gas mixtures, electrode polarity, and field strength are explored and experimental $V$-$I$ curves under various conditions are provided. These results demonstrate the capabilities of this setup in potential investigations of plasma physics, plasma-surface interactions, and materials science and its practical applications. The presented setup shows the potential to have several technological applications, e.g., to locally modify the sample surface (e.g., local oxidation and ion implantation for nanotechnology applications) on the $μ$m-scale. △ Less

Submitted 29 August, 2023; originally announced August 2023.

Comments: LG, DC, and RDM contributed equally to this work. The videos mentioned in the manuscript can be found in the Zenodo repository linked in the paper

Deep convolutional neural networks to restore single-shot electron microscopy images

Authors: I. Lobato, T. Friedrich, S. Van Aert

Abstract: State-of-the-art electron microscopes such as scanning electron microscopes (SEM), scanning transmission electron microscopes (STEM) and transmission electron microscopes (TEM) have become increasingly sophisticated. However, the quality of experimental images is often hampered by stochastic and deterministic distortions arising from the instrument or its environment. These distortions can arise d… ▽ More State-of-the-art electron microscopes such as scanning electron microscopes (SEM), scanning transmission electron microscopes (STEM) and transmission electron microscopes (TEM) have become increasingly sophisticated. However, the quality of experimental images is often hampered by stochastic and deterministic distortions arising from the instrument or its environment. These distortions can arise during any stage of the imaging process, including image acquisition, transmission, or visualization. In this paper, we will discuss the main sources of distortion in TEM and S(T)EM images, develop models to describe them and propose a method to correct these distortions using a convolutional neural network. We demonstrate the effectiveness of our approach on a variety of experimental images and show that it can significantly improve the signal-to-noise ratio resulting in an increase in the amount of quantitative structural information that can be extracted from the image. Overall, our findings provide a powerful framework for improving the quality of electron microscopy images and advancing the field of structural analysis and quantification in materials science and biology. △ Less

Submitted 29 March, 2023; originally announced March 2023.

Fast generation of calculated ADF-EDX scattering cross-sections under channelling conditions

Authors: Zezhong Zhang, Ivan Lobato, Annick De Backer, Sandra Van Aert, Peter Nellist

Abstract: Advanced materials often consist of multiple elements which are arranged in a complicated structure. Quantitative scanning transmission electron microscopy is useful to determine the composition and thickness of nanostructures at the atomic scale. However, significant difficulties remain to quantify mixed columns by comparing the resulting atomic resolution images and spectroscopy data with multis… ▽ More Advanced materials often consist of multiple elements which are arranged in a complicated structure. Quantitative scanning transmission electron microscopy is useful to determine the composition and thickness of nanostructures at the atomic scale. However, significant difficulties remain to quantify mixed columns by comparing the resulting atomic resolution images and spectroscopy data with multislice simulations where dynamic scattering needs to be taken into account. The combination of the computationally intensive nature of these simulations and the enormous amount of possible mixed column configurations for a given composition indeed severely hamper the quantification process. To overcome these challenges, we here report the development of an incoherent non-linear method for the fast prediction of ADF-EDX scattering cross-sections of mixed columns under channelling conditions. We first explain the origin of the ADF and EDX incoherence from scattering physics suggesting a linear dependence between those two signals in the case of a high-angle ADF detector. Taking EDX as a perfect incoherent reference mode, we quantitatively examine the ADF longitudinal incoherence under different microscope conditions using multislice simulations. Based on incoherent imaging, the atomic lensing model previously developed for ADF is now expanded to EDX, which yields ADF-EDX scattering cross-section predictions in good agreement with multislice simulations for mixed columns in a core-shell nanoparticle and a high entropy alloy. The fast and accurate prediction of ADF-EDX scattering cross-sections opens up new opportunities to explore the wide range of ordering possibilities of heterogeneous materials with multiple elements. △ Less

Submitted 16 September, 2022; originally announced September 2022.

ACM Class: J.2

Phase Object Reconstruction for 4D-STEM using Deep Learning

Authors: Thomas Friedrich, Chu-Ping Yu, Jo Verbeeck, Sandra Van Aert

Abstract: In this study we explore the possibility to use deep learning for the reconstruction of phase images from 4D scanning transmission electron microscopy (4D-STEM) data. The process can be divided into two main steps. First, the complex electron wave function is recovered for a convergent beam electron diffraction pattern (CBED) using a convolutional neural network (CNN). Subsequently a corresponding… ▽ More In this study we explore the possibility to use deep learning for the reconstruction of phase images from 4D scanning transmission electron microscopy (4D-STEM) data. The process can be divided into two main steps. First, the complex electron wave function is recovered for a convergent beam electron diffraction pattern (CBED) using a convolutional neural network (CNN). Subsequently a corresponding patch of the phase object is recovered using the phase object approximation (POA). Repeating this for each scan position in a 4D-STEM dataset and combining the patches by complex summation yields the full phase object. Each patch is recovered from a kernel of 3x3 adjacent CBEDs only, which eliminates common, large memory requirements and enables live processing during an experiment. The machine learning pipeline, data generation and the reconstruction algorithm are presented. We demonstrate that the CNN can retrieve phase information beyond the aperture angle, enabling super-resolution imaging. The image contrast formation is evaluated showing a dependence on thickness and atomic column type. Columns containing light and heavy elements can be imaged simultaneously and are distinguishable. The combination of super-resolution, good noise robustness and intuitive image contrast characteristics makes the approach unique among live imaging methods in 4D-STEM. △ Less

Submitted 30 August, 2022; v1 submitted 25 February, 2022; originally announced February 2022.

Real Time Integration Centre of Mass (riCOM) Reconstruction for 4D-STEM

Authors: Chu-Ping Yu, Thomas Friedrich, Daen Jannis, Sandra Van Aert, Johan Verbeeck

Abstract: A real-time image reconstruction method for scanning transmission electron microscopy (STEM) is proposed. With an algorithm requiring only the center of mass (COM) of the diffraction pattern at one probe position at a time, it is able to update the resulting image each time a new probe position is visited without storing any intermediate diffraction patterns. The results show clear features at hig… ▽ More A real-time image reconstruction method for scanning transmission electron microscopy (STEM) is proposed. With an algorithm requiring only the center of mass (COM) of the diffraction pattern at one probe position at a time, it is able to update the resulting image each time a new probe position is visited without storing any intermediate diffraction patterns. The results show clear features at higher spatial frequency, such as atomic column positions. It is also demonstrated that some common post processing methods, such as band pass filtering, can be directly integrated in the real time processing flow. Compared with other reconstruction methods, the proposed method produces high quality reconstructions with good noise robustness at extremely low memory and computational requirements. An efficient, interactive open source implementation of the concept is further presented, which is compatible with frame-based, as well as event-based camera/file types. This method provides the attractive feature of immediate feedback that microscope operators have become used to, e.g. conventional high angle annular dark field STEM imaging, allowing for rapid decision making and fine tuning to obtain the best possible images for beam sensitive samples at the lowest possible dose. △ Less

Submitted 14 December, 2021; v1 submitted 8 December, 2021; originally announced December 2021.

Coupling charge and topological reconstructions at polar oxide interfaces

Authors: T. C. van Thiel, W. Brzezicki, C. Autieri, J. R. Hortensius, D. Afanasiev, N. Gauquelin, D. Jannis, N. Janssen, D. J. Groenendijk, J. Fatermans, S. van Aert, J. Verbeeck, M. Cuoco, A. D. Caviglia

Abstract: In oxide heterostructures, different materials are integrated into a single artificial crystal, resulting in a breaking of inversion-symmetry across the heterointerfaces. A notable example is the interface between polar and non-polar materials, where valence discontinuities lead to otherwise inaccessible charge and spin states. This approach paved the way to the discovery of numerous unconventiona… ▽ More In oxide heterostructures, different materials are integrated into a single artificial crystal, resulting in a breaking of inversion-symmetry across the heterointerfaces. A notable example is the interface between polar and non-polar materials, where valence discontinuities lead to otherwise inaccessible charge and spin states. This approach paved the way to the discovery of numerous unconventional properties absent in the bulk constituents. However, control of the geometric structure of the electronic wavefunctions in correlated oxides remains an open challenge. Here, we create heterostructures consisting of ultrathin SrRuO$_3$, an itinerant ferromagnet hosting momentum-space sources of Berry curvature, and LaAlO$_3$, a polar wide-bandgap insulator. Transmission electron microscopy reveals an atomically sharp LaO/RuO$_2$/SrO interface configuration, leading to excess charge being pinned near the LaAlO$_3$/SrRuO$_3$ interface. We demonstrate through magneto-optical characterization, theoretical calculations and transport measurements that the real-space charge reconstruction modifies the momentum-space Berry curvature in SrRuO$_3$, driving a reorganization of the topological charges in the band structure. Our results illustrate how the topological and magnetic features of oxides can be manipulated by engineering charge discontinuities at oxide interfaces. △ Less

Submitted 7 July, 2021; originally announced July 2021.

Comments: 5 pages main text (4 figures), 29 pages of supplementary information

Journal ref: Phys. Rev. Lett. 127, 127202 (2021)

Phase retrieval from 4-dimensional electron diffraction datasets

Authors: Thomas Friedrich, Chu-Ping Yu, Johan Verbeek, Timothy Pennycook, Sandra Van Aert

Abstract: We present a computational imaging mode for large scale electron microscopy data, which retrieves a complex wave from noisy/sparse intensity recordings using a deep learning approach and subsequently reconstructs an image of the specimen from the Convolutional Neural Network (CNN) predicted exit waves. We demonstrate that an appropriate forward model in combination with open data frameworks can be… ▽ More We present a computational imaging mode for large scale electron microscopy data, which retrieves a complex wave from noisy/sparse intensity recordings using a deep learning approach and subsequently reconstructs an image of the specimen from the Convolutional Neural Network (CNN) predicted exit waves. We demonstrate that an appropriate forward model in combination with open data frameworks can be used to generate large synthetic datasets for training. In combination with augmenting the data with Poisson noise corresponding to varying dose-values, we effectively eliminate overfitting issues. The U-NET based architecture of the CNN is adapted to the task at hand and performs well while maintaining a relatively small size and fast performance. The validity of the approach is confirmed by comparing the reconstruction to well-established methods using simulated, as well as real electron microscopy data. The proposed method is shown to be effective particularly in the low dose range, evident by strong suppression of noise, good spatial resolution, and sensitivity to different atom types, enabling the simultaneous visualisation of light and heavy elements and making different atomic species distinguishable. Since the method acts on a very local scale and is comparatively fast it bears the potential to be used for near-real-time reconstruction during data acquisition. △ Less

Submitted 15 June, 2021; originally announced June 2021.

Comments: Accepted conference paper of IEEE ICIP 2021

Procedure for 3D atomic resolution reconstructions using atom-counting and a Bayesian genetic algorithm

Authors: Annick De Backer, Sandra Van Aert, Peter D. Nellist, Lewys Jones

Abstract: We introduce a Bayesian genetic algorithm for reconstructing atomic models of nanoparticles from a single projection using Z-contrast imaging. The number of atoms in a projected atomic column obtained from annular dark field scanning transmission electron microscopy (ADF STEM) images serves as an input for the initial three-dimensional (3D) model. The novel algorithm minimizes the energy of the st… ▽ More We introduce a Bayesian genetic algorithm for reconstructing atomic models of nanoparticles from a single projection using Z-contrast imaging. The number of atoms in a projected atomic column obtained from annular dark field scanning transmission electron microscopy (ADF STEM) images serves as an input for the initial three-dimensional (3D) model. The novel algorithm minimizes the energy of the structure while utilizing a priori information about the finite precision of the atom-counting results and neighbor-mass relations. The results show excellent prospects for obtaining reliable reconstructions of beam-sensitive nanoparticles during dynamical processes from images acquired with sufficiently low incident electron doses. △ Less

Submitted 30 March, 2022; v1 submitted 12 May, 2021; originally announced May 2021.

The maximum a posteriori probability rule for atom column detection from HAADF STEM images

Authors: J. Fatermans, S. Van Aert, A. J. den Dekker

Abstract: Recently, the maximum a posteriori (MAP) probability rule has been proposed as an objective and quantitative method to detect atom columns and even single atoms from high-resolution high-angle annular dark-field (HAADF) scanning transmission electron microscopy (STEM) images. The method combines statistical parameter estimation and model-order selection using a Bayesian framework and has been show… ▽ More Recently, the maximum a posteriori (MAP) probability rule has been proposed as an objective and quantitative method to detect atom columns and even single atoms from high-resolution high-angle annular dark-field (HAADF) scanning transmission electron microscopy (STEM) images. The method combines statistical parameter estimation and model-order selection using a Bayesian framework and has been shown to be especially useful for the analysis of the structure of beam-sensitive nanomaterials. In order to avoid beam damage, images of such materials are usually acquired using a limited incoming electron dose resulting in a low contrast-to-noise ratio (CNR) which makes visual inspection unreliable. This creates a need for an objective and quantitative approach. The present paper describes the methodology of the MAP probability rule, gives its step-by-step derivation and discusses its algorithmic implementation for atom column detection. In addition, simulation results are presented showing that the performance of the MAP probability rule to detect the correct number of atomic columns from HAADF STEM images is superior to that of other model-order selection criteria, including the Akaike Information Criterion (AIC) and the Bayesian Information Criterion (BIC). Moreover, the MAP probability rule is used as a tool to evaluate the relation between STEM image quality measures and atom detectability resulting in the introduction of the so-called integrated CNR (ICNR) as a new image quality measure that better correlates with atom detectability than conventional measures such as signal-to-noise ratio (SNR) and CNR. △ Less

Submitted 15 February, 2019; originally announced February 2019.

The atomic lensing model: new opportunities for atom-by-atom metrology of heterogeneous nanomaterials

Authors: K. H. W. van den Bos, L. Janssens, A. De Backer, P. D. Nellist, S. Van Aert

Abstract: The atomic lensing model has been proposed as a promising method facilitating atom-counting in heterogeneous nanocrystals [KHW van den Bos et. al, Phys. Rev. Lett. 116 (2016) 246101] Here, image simulations will validate the model, which describes dynamical diffraction as a superposition of individual atoms focussing the incident electrons. It will be demonstrated that the model is reliable in the… ▽ More The atomic lensing model has been proposed as a promising method facilitating atom-counting in heterogeneous nanocrystals [KHW van den Bos et. al, Phys. Rev. Lett. 116 (2016) 246101] Here, image simulations will validate the model, which describes dynamical diffraction as a superposition of individual atoms focussing the incident electrons. It will be demonstrated that the model is reliable in the annular dark field regime for crystals having columns containing dozens of atoms. By using the principles of statistical detection theory, it will be shown that this model gives new opportunities for detecting compositional differences. △ Less

Submitted 15 February, 2019; originally announced February 2019.

Berry phase engineering at oxide interfaces

Authors: D. J. Groenendijk, C. Autieri, T. C. van Thiel, W. Brzezicki, N. Gauquelin, P. Barone, K. H. W. van den Bos, S. van Aert, J. Verbeeck, A. Filippetti, S. Picozzi, M. Cuoco, A. D. Caviglia

Abstract: Geometric phases in condensed matter play a central role in topological transport phenomena such as the quantum, spin and anomalous Hall effect (AHE). In contrast to the quantum Hall effect - which is characterized by a topological invariant and robust against perturbations - the AHE depends on the Berry curvature of occupied bands at the Fermi level and is therefore highly sensitive to subtle cha… ▽ More Geometric phases in condensed matter play a central role in topological transport phenomena such as the quantum, spin and anomalous Hall effect (AHE). In contrast to the quantum Hall effect - which is characterized by a topological invariant and robust against perturbations - the AHE depends on the Berry curvature of occupied bands at the Fermi level and is therefore highly sensitive to subtle changes in the band structure. A unique platform for its manipulation is provided by transition metal oxide heterostructures, where engineering of emergent electrodynamics becomes possible at atomically sharp interfaces. We demonstrate that the Berry curvature and its corresponding vector potential can be manipulated by interface engineering of the correlated itinerant ferromagnet SrRuO$_3$ (SRO). Measurements of the AHE reveal the presence of two interface-tunable spin-polarized conduction channels. Using theoretical calculations, we show that the tunability of the AHE at SRO interfaces arises from the competition between two topologically non-trivial bands. Our results demonstrate how reconstructions at oxide interfaces can be used to control emergent electrodynamics on a nanometer-scale, opening new routes towards spintronics and topological electronics. △ Less

Submitted 12 October, 2018; originally announced October 2018.

Comments: 8 pages, 4 figures, (+ Supplementary Information)

Journal ref: Phys. Rev. Research 2, 023404 (2020)

Thickness dependent properties in oxide heterostructures driven by structurally induced metal-oxygen hybridization variations

Authors: Zhaoliang Liao, Nicolas Gauquelin, Robert J. Green, Sebastian Macke, Julie Gonnissen, Sean Thomas, Zhicheng Zhong, Lin Li, Liang Si, Sandra Van Aert, Philipp Hansmann, Karsten Held, Jing Xia, Johan Verbeeck, Gustaaf Van Tendeloo, George A. Sawatzky, Gertjan Koster, Mark Huijben, Guus Rijnders

Abstract: Thickness driven electronic phase transitions are broadly observed in different types of functional perovskite heterostructures. However, uncertainty remains whether these effects are solely due to spatial confinement, broken symmetry or rather to a change of structure with varying film thickness. Here, we present direct evidence for the relaxation of oxygen 2p and Mn 3d orbital (p-d) hybridizatio… ▽ More Thickness driven electronic phase transitions are broadly observed in different types of functional perovskite heterostructures. However, uncertainty remains whether these effects are solely due to spatial confinement, broken symmetry or rather to a change of structure with varying film thickness. Here, we present direct evidence for the relaxation of oxygen 2p and Mn 3d orbital (p-d) hybridization coupled to the layer dependent octahedral tilts within a La2/3Sr1/3MnO3 film driven by interfacial octahedral coupling. An enhanced Curie temperature is achieved by reducing the octahedral tilting via interface structure engineering. Atomically resolved lattice, electronic and magnetic structures together with X-ray absorption spectroscopy demonstrate the central role of thickness dependent p-d hybridization in the widely observed dimensionality effects present in correlated oxide heterostructures. △ Less

Submitted 26 January, 2017; originally announced January 2017.

Comments: Accepted by Adv. Funct. Mater

Atomic resolution mapping of phonon excitations in STEM-EELS experiments

Authors: R. Egoavil, N. Gauquelin, G. T. Martinez, S. Van Aert, G. Van Tendeloo, J. Verbeeck

Abstract: Atomically resolved electron energy-loss spectroscopy experiments are commonplace in modern aberrationcorrected transmission electron microscopes. Energy resolution has also been increasing steadily with the continuous improvement of electron monochromators. Electronic excitations however are known to be delocalised due to the long range interaction of the charged accelerated electrons with the el… ▽ More Atomically resolved electron energy-loss spectroscopy experiments are commonplace in modern aberrationcorrected transmission electron microscopes. Energy resolution has also been increasing steadily with the continuous improvement of electron monochromators. Electronic excitations however are known to be delocalised due to the long range interaction of the charged accelerated electrons with the electrons in a sample. This has made several scientists question the value of combined high spatial and energy resolution for mapping interband transitions and possibly phonon excitation in crystals. In this paper we demonstrate experimentally that atomic resolution information is indeed available at very low energy losses around 100 meV expressed as a modulation of the broadening of the zero loss peak. Careful data analysis allows us to get a glimpse of what are likely phonon excitations with both an energy loss and gain part. These experiments confirm recent theoretical predictions on the strong localisation of phonon excitations as opposed to electronic excitations and show that a combination of atomic resolution and recent developments in increased energy resolution will offer great benefit for mapping phonon modes in real space. △ Less

Submitted 6 March, 2014; originally announced March 2014.

Mapping electronic reconstruction at the metal/insulator interfaces in \ce{LaVO_3/SrVO_3} heterostructures

Authors: Haiyan Tan, Ricardo Egoavil, Armand Béché, Gerardo T Martinez, Sandra Van Aert, Jo Verbeeck, Gustaaf Van Tendeloo, Hélène Rotella, Philippe Boullay, Alain Pautrat, Wilfrid Prellier

Abstract: A \ce{(LaVO_3)_6/(SrVO_3)_3} superlattice is studied with a combination of sub-Å resolved scanning transmission electron microscopy and monochromated electron energy-loss spectroscopy. The V oxidation state is mapped with atomic spatial resolution enabling to investigate electronic reconstruction at the \ce{LaVO_3}/\ce{SrVO_3} interfaces. Surprisingly, asymmetric charge distribution is found at ad… ▽ More A \ce{(LaVO_3)_6/(SrVO_3)_3} superlattice is studied with a combination of sub-Å resolved scanning transmission electron microscopy and monochromated electron energy-loss spectroscopy. The V oxidation state is mapped with atomic spatial resolution enabling to investigate electronic reconstruction at the \ce{LaVO_3}/\ce{SrVO_3} interfaces. Surprisingly, asymmetric charge distribution is found at adjacent chemically symmetric interfaces. The local structure is proposed and simulated with double channeling calculation which agrees qualitatively with our experiment. We demonstrate that local strain asymmetry is the likely cause of the electronic asymmetry of the interfaces. The electronic reconstruction at the interfaces extends much further than the chemical composition, varying from 0.5 to 1.2 nm. This distance corresponds to the length of charge transfer previously found in the \ce{(LaVO_3)_m}/\ce{(SrVO_3)_n} metal/insulating and the \ce{(LaAlO_3)_m}/\ce{(SrTiO_3)_n} insulating/insulating interfaces. △ Less

Submitted 3 October, 2013; originally announced October 2013.

Comments: 6 pages, 5 figures. Physical Review B, 2013

Journal ref: Phys. Rev. B, 2013, 88, 155123

Optimized fabrication of high quality La0.67Sr0.33MnO3 thin films considering all essential characteristics

Authors: H Boschker, M Huijben, A Vailionis, J Verbeeck, S van Aert, M Luysberg, S Bals, G van Tendeloo, E P Houwman, G Koster, D H A Blank, G Rijnders

Abstract: In this article, an overview of the fabrication and properties of high quality La0.67Sr0.33MnO3 (LSMO) thin films is given. A high quality LSMO film combines a smooth surface morphology with a large magnetization and a small residual resistivity, while avoiding precipitates and surface segregation. In literature, typically only a few of these issues are adressed. We therefore present a thorough ch… ▽ More In this article, an overview of the fabrication and properties of high quality La0.67Sr0.33MnO3 (LSMO) thin films is given. A high quality LSMO film combines a smooth surface morphology with a large magnetization and a small residual resistivity, while avoiding precipitates and surface segregation. In literature, typically only a few of these issues are adressed. We therefore present a thorough characterization of our films, which were grown by pulsed laser deposition. The films were characterized with reflection high energy electron diffraction, atomic force microscopy, x-ray diffraction, magnetization and transport measurements, x-ray photoelectron spectroscopy and scanning transmission electron microscopy. The films have a saturation magnetization of 4.0 μB/Mn, a Curie temperature of 350 K and a residual resistivity of 60 μΩcm. These results indicate that high quality films, combining both large magnetization and small residual resistivity, were realized. A comparison between different samples presented in literature shows that focussing on a single property is insufficient for the optimization of the deposition process. For high quality films, all properties have to be adressed. For LSMO devices, the thin film quality is crucial for the device performance. Therefore, this research is important for the application of LSMO in devices. △ Less

Submitted 11 March, 2011; originally announced March 2011.

Comments: Accepted for publication in Journal of Physics D - Applied Physics

Defect engineering in oxide heterostructures by enhanced oxygen surface exchange

Authors: M. Huijben, G. Koster, M. K. Kruize, S. Wenderich, J. Verbeeck, S. Bals, E. Slooten, B. Shi, H. J. A. Molegraaf, J. E. Kleibeuker, S. van Aert, J. B. Goedkoop, A. Brinkman, D. H. A. Blank, M. S. Golden, G. van Tendeloo, H. Hilgenkamp, G. Rijnders

Abstract: The synthesis of materials with well-controlled composition and structure improves our understanding of their intrinsic electrical transport properties. Recent developments in atomically controlled growth have been shown to be crucial in enabling the study of new physical phenomena in epitaxial oxide heterostructures. Nevertheless, these phenomena can be influenced by the presence of defects that… ▽ More The synthesis of materials with well-controlled composition and structure improves our understanding of their intrinsic electrical transport properties. Recent developments in atomically controlled growth have been shown to be crucial in enabling the study of new physical phenomena in epitaxial oxide heterostructures. Nevertheless, these phenomena can be influenced by the presence of defects that act as extrinsic sources of both doping and impurity scattering. Control over the nature and density of such defects is therefore necessary, are we to fully understand the intrinsic materials properties and exploit them in future device technologies. Here, we show that incorporation of a strontium copper oxide nano-layer strongly reduces the impurity scattering at conducting interfaces in oxide LaAlO3-SrTiO3(001) heterostructures, opening the door to high carrier mobility materials. We propose that this remote cuprate layer facilitates enhanced suppression of oxygen defects by reducing the kinetic barrier for oxygen exchange in the hetero-interfacial film system. This design concept of controlled defect engineering can be of significant importance in applications in which enhanced oxygen surface exchange plays a crucial role. △ Less

Submitted 11 June, 2013; v1 submitted 11 August, 2010; originally announced August 2010.

Comments: Advanced Functional Materials (2013)

Electronically coupled complementary interfaces between perovskite band insulators

Authors: M. Huijben, G. Rijnders, D. H. A. Blank, S. Bals, S. Van Aert, J. Verbeeck, G. Van Tendeloo, A. Brinkman, H. Hilgenkamp

Abstract: Perovskite oxides exhibit a plethora of exceptional electronic properties, providing the basis for novel concepts of oxide-electronic devices. The interest in these materials is even extended by the remarkable characteristics of their interfaces. Studies on single epitaxial connections between the two wide-bandgap insulators LaAlO3 and SrTiO3 have revealed them to be either high-mobility electro… ▽ More Perovskite oxides exhibit a plethora of exceptional electronic properties, providing the basis for novel concepts of oxide-electronic devices. The interest in these materials is even extended by the remarkable characteristics of their interfaces. Studies on single epitaxial connections between the two wide-bandgap insulators LaAlO3 and SrTiO3 have revealed them to be either high-mobility electron conductors or insulating, depending on the atomic stacking sequences. In the latter case they are conceivably positively charged. For device applications, as well as for basic understanding of the interface conduction mechanism, it is important to investigate the electronic coupling of closely-spaced complementary interfaces. Here we report the successful realization of such electronically coupled complementary interfaces in SrTiO3 - LaAlO3 thin film multilayer structures, in which the atomic stacking sequence at the interfaces was confirmed by quantitative transmission electron microscopy. We found a critical separation distance of 6 perovskite unit cell layers, corresponding to approximately 2.3 nm, below which a decrease of the interface conductivity and carrier density occurs. Interestingly, the high carrier mobilities characterizing the separate electron doped interfaces are found to be maintained in coupled structures down to sub-nanometer interface spacing. △ Less

Submitted 4 March, 2006; originally announced March 2006.