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Intrinsically shunted Josephson junctions for electronics applications
Authors:
M. Belogolovskii,
E. Zhitlukhina,
V. Lacquaniti,
N. De Leo,
M. Fretto,
A. Sosso
Abstract:
Conventional Josephson metal-insulator-metal devices are inherently underdamped and exhibit hysteretic current-voltage response due to a very high subgap resistance compared to that in the normal state. At the same time, overdamped junctions with single-valued characteristics are needed for most superconducting digital applications. The usual way to overcome the hysteretic behavior is to place an…
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Conventional Josephson metal-insulator-metal devices are inherently underdamped and exhibit hysteretic current-voltage response due to a very high subgap resistance compared to that in the normal state. At the same time, overdamped junctions with single-valued characteristics are needed for most superconducting digital applications. The usual way to overcome the hysteretic behavior is to place an external low-resistance normal-metal shunt in parallel with each junction. Unfortunately, such solution results in a considerable complication of the circuitry design and introduces parasitic inductance through the junction. This paper provides a concise overview of some generic approaches that have been proposed in order to realize internal shunting in Josephson heterostructures with a barrier that itself contains the desired resistive component. The main attention is paid to self-shunted devices with local weak-link transmission probabilities so strongly disordered in the interface plane that transmission probabilities are tiny for the main part of the transition region between two superconducting electrodes, while a small part of the interface is well transparent. We consider the possibility of realizing a universal bimodal distribution function and emphasize advantages of such junctions that can be considered as a new class of self-shunted Josephson devices promising for practical applications in superconducting electronics operating at 4.2 K.
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Submitted 7 October, 2017;
originally announced October 2017.
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Quantum coherent transport in a three-arm beam splitter and a Braess paradox
Authors:
E. Zhitlukhina,
M. Belogolovskii,
N. De Leo,
M. Fretto,
A. Sosso,
P. Seidel
Abstract:
The Braess paradox encountered in classical networks is a counterintuitive phenomenon when the flow in a road network can be impeded by adding a new road or, more generally, the overall net performance can degrade after addition of an extra available choice. In this work, we discuss the possibility of a similar effect in a phase-coherent quantum transport and demonstrate it by example of a simple…
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The Braess paradox encountered in classical networks is a counterintuitive phenomenon when the flow in a road network can be impeded by adding a new road or, more generally, the overall net performance can degrade after addition of an extra available choice. In this work, we discuss the possibility of a similar effect in a phase-coherent quantum transport and demonstrate it by example of a simple Y-shaped metallic fork. To reveal the Braess-like partial suppression of the charge flow in such device, it is proposed to transfer two outgoing arms into a superconducting state. We show that the differential conductance-vs-voltage spectrum of the hybrid fork structure varies considerably when the extra link between the two superconducting leads is added and it can serve as an indicator of quantum correlations which manifest themselves in the quantum Braess paradox.
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Submitted 8 October, 2017; v1 submitted 15 September, 2017;
originally announced September 2017.
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Anomalous Inner-Gap Structure in Transport Characteristics of Superconducting Junctions with Degraded Interfaces
Authors:
E. Zhitlukhina,
I. Devyatov,
O. Egorov,
M. Belogolovskii,
P. Seidel
Abstract:
Quantitative description of charge transport across tunneling and break-junction devices with novel superconductors encounters some problems not present, or not as severe for traditional superconducting materials. In this work, we explain unexpected features in related transport characteristics as an effect of a degraded nano-scaled sheath at the superconductor surface. Model capturing main aspect…
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Quantitative description of charge transport across tunneling and break-junction devices with novel superconductors encounters some problems not present, or not as severe for traditional superconducting materials. In this work, we explain unexpected features in related transport characteristics as an effect of a degraded nano-scaled sheath at the superconductor surface. Model capturing main aspects of the ballistic charge transport across hybrid superconducting structures with normally-conducting nm-thick interlayers is proposed. The calculations are based on a scattering formalism taking into account Andreev electron-into-hole (and inverse) reflections at normal metal-superconductor interfaces as well as transmission and backscattering events in insulating barriers between the electrodes. Current-voltage characteristics of such devices exhibit a rich diversity of anomalous (from the viewpoint of the standard theory) features, in particular, shift of differential-conductance maximums at gap voltages to lower positions and appearance of well-defined dips instead expected coherence peaks. We compare our results with related experimental data.
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Submitted 10 August, 2016;
originally announced August 2016.
