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Imaging Tunable Luttinger Liquid Systems in van der Waals Heterostructures
Authors:
Hongyuan Li,
Ziyu Xiang,
Tianle Wang,
Mit H. Naik,
Woochang Kim,
Jiahui Nie,
Shiyu Li,
Zhehao Ge,
Zehao He,
Yunbo Ou,
Rounak Banerjee,
Takashi Taniguchi,
Kenji Watanabe,
Sefaattin Tongay,
Alex Zettl,
Steven G. Louie,
Michael P. Zaletel,
Michael F. Crommie,
Feng Wang
Abstract:
One-dimensional (1D) interacting electrons are often described as a Luttinger liquid1-4 having properties that are intrinsically different from Fermi liquids in higher dimensions5,6. 1D electrons in materials systems exhibit exotic quantum phenomena that can be tuned by both intra- and inter-1D-chain electronic interactions, but their experimental characterization can be challenging. Here we demon…
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One-dimensional (1D) interacting electrons are often described as a Luttinger liquid1-4 having properties that are intrinsically different from Fermi liquids in higher dimensions5,6. 1D electrons in materials systems exhibit exotic quantum phenomena that can be tuned by both intra- and inter-1D-chain electronic interactions, but their experimental characterization can be challenging. Here we demonstrate that layer-stacking domain walls (DWs) in van der Waals heterostructures form a broadly tunable Luttinger liquid system including both isolated and coupled arrays. We have imaged the evolution of DW Luttinger liquids under different interaction regimes tuned by electron density using a novel scanning tunneling microscopy (STM) technique. Single DWs at low carrier density are highly susceptible to Wigner crystallization consistent with a spin-incoherent Luttinger liquid, while at intermediate densities dimerized Wigner crystals form due to an enhanced magneto-elastic coupling. Periodic arrays of DWs exhibit an interplay between intra- and inter-chain interactions that gives rise to new quantum phases. At low electron densities inter-chain interactions are dominant and induce a 2D electron crystal composed of phased-locked 1D Wigner crystal in a staggered configuration. Increased electron density causes intra-chain fluctuation potentials to dominate, leading to an electronic smectic liquid crystal phase where electrons are ordered with algebraical correlation decay along the chain direction but disordered between chains. Our work shows that layer-stacking DWs in 2D heterostructures offers new opportunities to explore Luttinger liquid physics.
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Submitted 25 April, 2024;
originally announced April 2024.
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Wigner Molecular Crystals from Multi-electron Moiré Artificial Atoms
Authors:
Hongyuan Li,
Ziyu Xiang,
Aidan P. Reddy,
Trithep Devakul,
Renee Sailus,
Rounak Banerjee,
Takashi Taniguchi,
Kenji Watanabe,
Sefaattin Tongay,
Alex Zettl,
Liang Fu,
Michael F. Crommie,
Feng Wang
Abstract:
Semiconductor moiré superlattices provide a versatile platform to engineer new quantum solids composed of artificial atoms on moiré sites. Previous studies have mostly focused on the simplest correlated quantum solid - the Fermi-Hubbard model - where intra-atom interactions are simplified to a single onsite repulsion energy U. These studies have revealed novel quantum phases ranging from Mott insu…
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Semiconductor moiré superlattices provide a versatile platform to engineer new quantum solids composed of artificial atoms on moiré sites. Previous studies have mostly focused on the simplest correlated quantum solid - the Fermi-Hubbard model - where intra-atom interactions are simplified to a single onsite repulsion energy U. These studies have revealed novel quantum phases ranging from Mott insulators to quantum anomalous Hall insulators at a filling of one electron per moiré unit cell. New types of quantum solids should arise at even higher filling factors where the multi-electron configuration of moiré artificial atoms provides new degrees of freedom. Here we report the experimental observation of Wigner molecular crystals emerging from multi-electron artificial atoms in twisted bilayer WS2 moiré superlattices. Moiré artificial atoms, unlike natural atoms, can host qualitatively different electron states due to the interplay between quantized energy levels and Coulomb interactions. Using scanning tunneling microscopy (STM), we demonstrate that Wigner molecules appear in multi-electron artificial atoms when Coulomb interactions dominate. Three-electron Wigner molecules, for example, are seen to exhibit a characteristic trimer pattern. The array of Wigner molecules observed in a moiré superlattice comprises a new crystalline phase of electrons: the Wigner molecular crystal. We show that these Wigner molecular crystals are highly tunable through mechanical strain, moiré period, and carrier charge type. Our study presents new opportunities for exploring quantum phenomena in moiré quantum solids composed of multi-electron artificial atoms.
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Submitted 11 December, 2023;
originally announced December 2023.
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Low Resistance Ohmic Contact to P-type Monolayer WSe2
Authors:
Jingxu Xie,
Zuocheng Zhang,
Haodong Zhang,
Vikram Nagarajan,
Wenyu Zhao,
Haleem Kim,
Collin Sanborn,
Ruishi Qi,
Sudi Chen,
Salman Kahn,
Kenji Watanabe,
Takashi Taniguchi,
Alex Zettl,
Michael Crommie,
James Analytis,
Feng Wang
Abstract:
Advanced microelectronics in the future may require semiconducting channel materials beyond silicon. Two-dimensional (2D) semiconductors, characterized by their atomically thin thickness, hold immense promise for high-performance electronic devices at the nanometer scale with lower heat dissipation. One challenge for achieving high-performance 2D semiconductor field effect transistors (FET), espec…
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Advanced microelectronics in the future may require semiconducting channel materials beyond silicon. Two-dimensional (2D) semiconductors, characterized by their atomically thin thickness, hold immense promise for high-performance electronic devices at the nanometer scale with lower heat dissipation. One challenge for achieving high-performance 2D semiconductor field effect transistors (FET), especially for p-type materials, is the high electrical contact resistance present at the metal-semiconductor interface. In conventional bulk semiconductors, low resistance ohmic contact is realized through heavy substitutional doping with acceptor or donor impurities at the contact region. The strategy of substitutional doping, however, does not work for p-type 2D semiconductors such as monolayer tungsten diselenide (WSe$_2$).In this study, we developed highly efficient charge-transfer doping with WSe$_2$/$α$-RuCl$_3$ heterostructures to achieve low-resistance ohmic contact for p-type WSe$_2$ transistors. We show that a hole doping as high as 3$\times$10$^{13}$ cm$^{-2}$ can be achieved in the WSe$_2/α$-RuCl$_3$ heterostructure due to its type-III band alignment. It results in an Ohmic contact with resistance lower than 4 k Ohm $μ$m at the p-type monolayer WSe$_2$/metal junction. at room temperature. Using this low-resistance contact, we demonstrate high-performance p-type WSe$_2$ transistors with a saturation current of 35 $μ$A$\cdot$ $μ$m$^{-1}$ and an I$_{ON}$/I$_{OFF}$ ratio exceeding 10$^9$ It could enable future microelectronic devices based on 2D semiconductors and contribute to the extension of Moore's law.
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Submitted 8 December, 2023;
originally announced December 2023.
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Electrically controlled interlayer trion fluid in electron-hole bilayers
Authors:
Ruishi Qi,
Qize Li,
Zuocheng Zhang,
Sudi Chen,
Jingxu Xie,
Yunbo Ou,
Zhiyuan Cui,
David D. Dai,
Andrew Y. Joe,
Takashi Taniguchi,
Kenji Watanabe,
Sefaattin Tongay,
Alex Zettl,
Liang Fu,
Feng Wang
Abstract:
The combination of repulsive and attractive Coulomb interactions in a quantum electron(e)-hole(h) fluid can give rise to novel correlated phases of multiparticle charge complexes such as excitons, trions and biexcitons. Here we report the first experimental realization of an electrically controlled interlayer trion fluid in two-dimensional van der Waals heterostructures. We demonstrate that in the…
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The combination of repulsive and attractive Coulomb interactions in a quantum electron(e)-hole(h) fluid can give rise to novel correlated phases of multiparticle charge complexes such as excitons, trions and biexcitons. Here we report the first experimental realization of an electrically controlled interlayer trion fluid in two-dimensional van der Waals heterostructures. We demonstrate that in the strong coupling regime of electron-hole bilayers, electrons and holes in separate layers can spontaneously form three-particle trion bound states that resemble positronium ions in high energy physics. The interlayer trions can assume 1e-2h and 2e-1h configurations, where electrons and holes are confined in different transition metal dichalcogenide layers. We show that the two correlated holes in 1e-2h trions form a spin-singlet state with a spin gap of ~1meV. By electrostatic gating, the equilibrium state of our system can be continuously tuned into an exciton fluid, a trion fluid, an exciton-trion mixture, a trion-charge mixture or an electron-hole plasma. Upon optical excitation, the system can host novel high-order multiparticle charge complexes including interlayer four-particle complex (tetrons) and five-particle complex (pentons). Our work demonstrates a unique platform to study novel correlated phases of tunable Bose-Fermi mixtures and opens up new opportunities to realize artificial ions/molecules in electronic devices.
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Submitted 5 December, 2023;
originally announced December 2023.
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Three-dimensional imaging of buried heterointerfaces
Authors:
Colum M. O'Leary,
Haozhi Sha,
Jianhua Zhang,
Cong Su,
Salman Kahn,
Huaidong Jiang,
Alex Zettl,
Jim Ciston,
Jianwei Miao
Abstract:
We report three-dimensional (3D) structure determination of a twisted hexagonal boron nitride (h-BN) heterointerface from a single-view data set using multislice ptychography. We identify the buried heterointerface between two twisted h-BN flakes with a lateral resolution of 0.57 Å and a depth resolution of 2.5 nm. The latter is a significant improvement (~2.7 times) over the aperture-limited dept…
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We report three-dimensional (3D) structure determination of a twisted hexagonal boron nitride (h-BN) heterointerface from a single-view data set using multislice ptychography. We identify the buried heterointerface between two twisted h-BN flakes with a lateral resolution of 0.57 Å and a depth resolution of 2.5 nm. The latter is a significant improvement (~2.7 times) over the aperture-limited depth resolution of incoherent imaging modes such as annular-dark-field scanning transmission electron microscopy. This is attributed to the diffraction signal extending beyond the aperture edge with the depth resolution set by the curvature of the Ewald sphere. Future advances to this approach could improve the depth resolution to the sub-nanometer level and enable the identification of individual dopants, defects and color centers in twisted heterointerfaces and other materials.
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Submitted 18 May, 2024; v1 submitted 29 August, 2023;
originally announced August 2023.
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Imaging Moiré Excited States with Photocurrent Tunneling Microscopy
Authors:
Hongyuan Li,
Ziyu Xiang,
Mit H. Naik,
Woochang Kim,
Zhenglu Li,
Renee Sailus,
Rounak Banerjee,
Takashi Taniguchi,
Kenji Watanabe,
Sefaattin Tongay,
Alex Zettl,
Felipe H. da Jornada,
Steven G. Louie1,
Michael F. Crommie,
Feng Wang
Abstract:
Moiré superlattices provide a highly tunable and versatile platform to explore novel quantum phases and exotic excited states ranging from correlated insulators1-17 to moiré excitons7-10,18. Scanning tunneling microscopy has played a key role in probing microscopic behaviors of the moiré correlated ground states at the atomic scale1,11-15,19. Atomic-resolution imaging of quantum excited state in m…
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Moiré superlattices provide a highly tunable and versatile platform to explore novel quantum phases and exotic excited states ranging from correlated insulators1-17 to moiré excitons7-10,18. Scanning tunneling microscopy has played a key role in probing microscopic behaviors of the moiré correlated ground states at the atomic scale1,11-15,19. Atomic-resolution imaging of quantum excited state in moiré heterostructures, however, has been an outstanding experimental challenge. Here we develop a novel photocurrent tunneling microscopy by combining laser excitation and scanning tunneling spectroscopy (laser-STM) to directly visualize the electron and hole distribution within the photoexcited moiré exciton in a twisted bilayer WS2 (t-WS2). We observe that the tunneling photocurrent alternates between positive and negative polarities at different locations within a single moiré unit cell. This alternating photocurrent originates from the exotic in-plane charge-transfer (ICT) moiré exciton in the t-WS2 that emerges from the competition between the electron-hole Coulomb interaction and the moiré potential landscape. Our photocurrent maps are in excellent agreement with our GW-BSE calculations for excitonic states in t-WS2. The photocurrent tunneling microscopy creates new opportunities for exploring photoexcited non-equilibrium moiré phenomena at the atomic scale.
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Submitted 1 June, 2023;
originally announced June 2023.
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Linearly dispersive bands at the onset of correlations in K$_x$C$_{60}$ films
Authors:
Ping Ai,
Luca Moreschini,
Ryo Mori,
Drew W. Latzke,
Jonathan D. Denlinger,
Alex Zettl,
Claudia Ojeda-Aristizabal,
Alessandra Lanzara
Abstract:
Molecular crystals are a flexible platform to induce novel electronic phases. Due to the weak forces between molecules, intermolecular distances can be varied over relatively larger ranges than interatomic distances in atomic crystals. On the other hand, the hopping terms are generally small, which results in narrow bands, strong correlations and heavy electrons. Here, by growing K$_x$C$_{60}$ ful…
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Molecular crystals are a flexible platform to induce novel electronic phases. Due to the weak forces between molecules, intermolecular distances can be varied over relatively larger ranges than interatomic distances in atomic crystals. On the other hand, the hopping terms are generally small, which results in narrow bands, strong correlations and heavy electrons. Here, by growing K$_x$C$_{60}$ fullerides on hexagonal layered Bi$_2$Se$_3$, we show that upon doping the series undergoes a Mott transition from a molecular insulator to a correlated metal, and an in-gap state evolves into highly dispersive Dirac-like fermions at half filling, where superconductivity occurs. This picture challenges the commonly accepted description of the low energy quasiparticles as appearing from a gradual electron doping of the conduction states, and suggests an intriguing parallel with the more famous family of the cuprate superconductors. More in general, it indicates that molecular crystals offer a viable route to engineer electron-electron interactions.
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Submitted 29 May, 2023;
originally announced May 2023.
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Visualizing and manipulating chiral interface states in a moiré quantum anomalous Hall insulator
Authors:
Canxun Zhang,
Tiancong Zhu,
Salman Kahn,
Tomohiro Soejima,
Kenji Watanabe,
Takashi Taniguchi,
Alex Zettl,
Feng Wang,
Michael P. Zaletel,
Michael F. Crommie
Abstract:
Moiré systems made from stacked two-dimensional materials host novel correlated and topological states that can be electrically controlled via applied gate voltages. We have used this technique to manipulate Chern domains in an interaction-driven quantum anomalous Hall insulator made from twisted monolayer-bilayer graphene (tMBLG). This has allowed the wavefunction of chiral interface states to be…
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Moiré systems made from stacked two-dimensional materials host novel correlated and topological states that can be electrically controlled via applied gate voltages. We have used this technique to manipulate Chern domains in an interaction-driven quantum anomalous Hall insulator made from twisted monolayer-bilayer graphene (tMBLG). This has allowed the wavefunction of chiral interface states to be directly imaged using a scanning tunneling microscope (STM). To accomplish this tMBLG carrier concentration was tuned to stabilize neighboring domains of opposite Chern number, thus providing topological interfaces completely devoid of any structural boundaries. STM tip pulse-induced quantum dots were utilized to induce new Chern domains and thereby create new chiral interface states with tunable chirality at predetermined locations. Theoretical analysis confirms the chiral nature of observed interface states and enables the determination of the characteristic length scale of valley polarization reversal across neighboring tMBLG Chern domains. tMBLG is shown to be a useful platform for imaging the exotic topological properties of correlated moiré systems.
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Submitted 23 July, 2023; v1 submitted 6 December, 2022;
originally announced December 2022.
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Imaging gate-induced molecular melting on a graphene field-effect transistor
Authors:
Franklin Liou,
Hsin-Zon Tsai,
Zachary A. H. Goodwin,
Andrew S. Aikawa,
Ethan Ha,
Michael Hu,
Yiming Yang,
Kenji Watanabe,
Takashi Taniguchi,
Alex Zettl,
Johannes Lischner,
Michael F. Crommie
Abstract:
Solid-liquid phase transitions are fundamental physical processes, but atomically-resolved microscopy has yet to capture both the solid and liquid dynamics for such a transition. We have developed a new technique for controlling the melting and freezing of 2D molecular layers on a graphene field-effect transistor (FET) that allows us to image phase transition dynamics via atomically-resolved scann…
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Solid-liquid phase transitions are fundamental physical processes, but atomically-resolved microscopy has yet to capture both the solid and liquid dynamics for such a transition. We have developed a new technique for controlling the melting and freezing of 2D molecular layers on a graphene field-effect transistor (FET) that allows us to image phase transition dynamics via atomically-resolved scanning tunneling microscopy. Back-gate voltages applied to a F4TCNQ-decorated graphene FET induce reversible transitions between a charge-neutral solid phase and a negatively charged liquid phase. Nonequilibrium molecular melting dynamics are visualized by rapidly heating the graphene surface with electrical current and imaging the resulting evolution toward new equilibrium states. An analytical model has been developed that explains the observed equilibrium mixed-state phases based on spectroscopic measurement of both solid and liquid molecular energy levels. Observed non-equilibrium melting dynamics are consistent with Monte Carlo simulations.
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Submitted 23 November, 2022;
originally announced November 2022.
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Imaging the electron charge density in monolayer MoS2 at the Ångstrom scale
Authors:
Joel Martis,
Sandhya Susarla,
Archith Rayabharam,
Cong Su,
Timothy Paule,
Philipp Pelz,
Cassandra Huff,
Xintong Xu,
Hao-Kun Li,
Marc Jaikissoon,
Victoria Chen,
Eric Pop,
Krishna Saraswat,
Alex Zettl,
Narayana R. Aluru,
Ramamoorthy Ramesh,
Peter Ercius,
Arun Majumdar
Abstract:
Four-dimensional scanning transmission electron microscopy (4D-STEM) has recently gained widespread attention for its ability to image atomic electric fields with sub-Ångstrom spatial resolution. These electric field maps represent the integrated effect of the nucleus, core electrons and valence electrons, and separating their contributions is non-trivial. In this paper, we utilized simultaneously…
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Four-dimensional scanning transmission electron microscopy (4D-STEM) has recently gained widespread attention for its ability to image atomic electric fields with sub-Ångstrom spatial resolution. These electric field maps represent the integrated effect of the nucleus, core electrons and valence electrons, and separating their contributions is non-trivial. In this paper, we utilized simultaneously acquired 4D-STEM center of mass (CoM) images and annular dark field (ADF) images to determine the electron charge density in monolayer MoS2. We find that both the core electrons and the valence electrons contribute to the derived electron charge density. However, due to blurring by the probe shape, the valence electron contribution forms a nearly featureless background while most of the spatial modulation comes from the core electrons. Our findings highlight the importance of probe shape in interpreting charge densities derived from 4D STEM.
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Submitted 31 July, 2023; v1 submitted 17 October, 2022;
originally announced October 2022.
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Local spectroscopy of a gate-switchable moiré quantum anomalous Hall insulator
Authors:
Canxun Zhang,
Tiancong Zhu,
Tomohiro Soejima,
Salman Kahn,
Kenji Watanabe,
Takashi Taniguchi,
Alex Zettl,
Feng Wang,
Michael P. Zaletel,
Michael F. Crommie
Abstract:
In recent years, correlated insulating states, unconventional superconductivity, and topologically non-trivial phases have all been observed in several moiré heterostructures. However, understanding of the physical mechanisms behind these phenomena is hampered by the lack of local electronic structure data. Here, we use scanning tunnelling microscopy and spectroscopy to demonstrate how the interpl…
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In recent years, correlated insulating states, unconventional superconductivity, and topologically non-trivial phases have all been observed in several moiré heterostructures. However, understanding of the physical mechanisms behind these phenomena is hampered by the lack of local electronic structure data. Here, we use scanning tunnelling microscopy and spectroscopy to demonstrate how the interplay between correlation, topology, and local atomic structure determines the behaviour of electron-doped twisted monolayer-bilayer graphene. Through gate- and magnetic field-dependent measurements, we observe local spectroscopic signatures indicating a quantum anomalous Hall insulating state with a total Chern number of $\pm 2$ at a doping level of three electrons per moiré unit cell. We show that the sign of the Chern number and associated magnetism can be electrostatically switched only over a limited range of twist angle and sample hetero-strain values. This results from a competition between the orbital magnetization of filled bulk bands and chiral edge states, which is sensitive to strain-induced distortions in the moiré superlattice.
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Submitted 10 May, 2023; v1 submitted 12 October, 2022;
originally announced October 2022.
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Mapping Charge Excitations in Generalized Wigner Crystals
Authors:
Hongyuan Li,
Ziyu Xiang,
Emma Regan,
Wenyu Zhao,
Renee Sailus,
Rounak Banerjee,
Takashi Taniguchi,
Kenji Watanabe,
Sefaattin Tongay,
Alex Zettl,
Michael F. Crommie,
Feng Wang
Abstract:
Transition metal dichalcogenide-based moire superlattices exhibit very strong electron-electron correlations, thus giving rise to strongly correlated quantum phenomena such as generalized Wigner crystal states. Theoretical studies predict that unusual quasiparticle excitations across the correlated gap between upper and lower Hubbard bands can arise due to long-range Coulomb interactions in genera…
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Transition metal dichalcogenide-based moire superlattices exhibit very strong electron-electron correlations, thus giving rise to strongly correlated quantum phenomena such as generalized Wigner crystal states. Theoretical studies predict that unusual quasiparticle excitations across the correlated gap between upper and lower Hubbard bands can arise due to long-range Coulomb interactions in generalized Wigner crystal states. Here we describe a new scanning single-electron charging (SSEC) spectroscopy technique with nanometer spatial resolution and single-electron charge resolution that enables us to directly image electron and hole wavefunctions and to determine the thermodynamic gap of generalized Wigner crystal states in twisted WS2 moire heterostructures. High-resolution SSEC spectroscopy was achieved by combining scanning tunneling microscopy (STM) with a monolayer graphene sensing layer, thus enabling the generation of individual electron and hole quasiparticles in generalized Wigner crystals. We show that electron and hole quasiparticles have complementary wavefunction distributions and that thermodynamic gaps of order 50meV exist for the 1/3 and 2/3 generalized Wigner crystal states.
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Submitted 28 September, 2022; v1 submitted 26 September, 2022;
originally announced September 2022.
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Imaging Quantum Interference in Stadium-Shaped Monolayer and Bilayer Graphene Quantum Dots
Authors:
Zhehao Ge,
Dillon Wong,
Juwon Lee,
Frederic Joucken,
Eberth A. Quezada-Lopez,
Salman Kahn,
Hsin-Zon Tsai,
Takashi Taniguchi,
Kenji Watanabe,
Feng Wang,
Alex Zettl,
Michael F. Crommie,
Jairo Velasco Jr
Abstract:
Experimental realization of graphene-based stadium-shaped quantum dots (QDs) have been few and incompatible with scanned probe microscopy. Yet, direct visualization of electronic states within these QDs is crucial for determining the existence of quantum chaos in these systems. We report the fabrication and characterization of electrostatically defined stadium-shaped QDs in heterostructure devices…
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Experimental realization of graphene-based stadium-shaped quantum dots (QDs) have been few and incompatible with scanned probe microscopy. Yet, direct visualization of electronic states within these QDs is crucial for determining the existence of quantum chaos in these systems. We report the fabrication and characterization of electrostatically defined stadium-shaped QDs in heterostructure devices composed of monolayer graphene (MLG) and bilayer graphene (BLG). To realize a stadium-shaped QD, we utilized the tip of a scanning tunneling microscope to charge defects in a supporting hexagonal boron nitride flake. The stadium states visualized are consistent with tight-binding-based simulations, but lack clear quantum chaos signatures. The absence of quantum chaos features in MLG-based stadium QDs is attributed to the leaky nature of the confinement potential due to Klein tunneling. In contrast, for BLG-based stadium QDs (which have stronger confinement) quantum chaos is precluded by the smooth confinement potential which reduces interference and mixing between states.
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Submitted 12 July, 2022;
originally announced July 2022.
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Solving Complex Nanostructures With Ptychographic Atomic Electron Tomography
Authors:
Philipp M Pelz,
Sinead Griffin,
Scott Stonemeyer,
Derek Popple,
Hannah Devyldere,
Peter Ercius,
Alex Zettl,
Mary C Scott,
Colin Ophus
Abstract:
Transmission electron microscopy (TEM) is a potent technique for the determination of three-dimensional atomic scale structure of samples in structural biology and materials science. In structural biology, three-dimensional structures of proteins are routinely determined using phase-contrast single-particle cryo-electron microscopy from thousands of identical proteins, and reconstructions have rea…
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Transmission electron microscopy (TEM) is a potent technique for the determination of three-dimensional atomic scale structure of samples in structural biology and materials science. In structural biology, three-dimensional structures of proteins are routinely determined using phase-contrast single-particle cryo-electron microscopy from thousands of identical proteins, and reconstructions have reached atomic resolution for specific proteins. In materials science, three-dimensional atomic structures of complex nanomaterials have been determined using a combination of annular dark field (ADF) scanning transmission electron microscopic (STEM) tomography and subpixel localization of atomic peaks, in a method termed atomic electron tomography (AET). However, neither of these methods can determine the three-dimensional atomic structure of heterogeneous nanomaterials containing light elements. Here, we perform mixed-state electron ptychography from 34.5 million diffraction patterns to reconstruct a high-resolution tilt series of a double wall-carbon nanotube (DW-CNT), encapsulating a complex $\mathrm{ZrTe}$ sandwich structure. Class averaging of the resulting reconstructions and subpixel localization of the atomic peaks in the reconstructed volume reveals the complex three-dimensional atomic structure of the core-shell heterostructure with 17 picometer precision. From these measurements, we solve the full $\mathrm{Zr_{11}Te_{50}}$ structure, which contains a previously unobserved $\mathrm{ZrTe_{2}}$ phase in the core. The experimental realization of ptychographic atomic electron tomography (PAET) will allow for structural determination of a wide range of nanomaterials which are beam-sensitive or contain light elements.
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Submitted 17 June, 2022;
originally announced June 2022.
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Observation of a multitude of correlated states at the surface of bulk 1T-TaSe$_2$ crystals
Authors:
Yi Chen,
Wei Ruan,
Jeffrey D. Cain,
Ryan L. Lee,
Salman Kahn,
Caihong Jia,
Alex Zettl,
Michael F. Crommie
Abstract:
The interplay between electron-electron interactions and structural ordering can yield exceptionally rich correlated electronic phases. We have used scanning tunneling microscopy to investigate bulk 1T-TaSe2 and have uncovered surprisingly diverse correlated surface states thereof. These surface states exhibit the same in-plane charge density wave ordering but dramatically different electronic gro…
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The interplay between electron-electron interactions and structural ordering can yield exceptionally rich correlated electronic phases. We have used scanning tunneling microscopy to investigate bulk 1T-TaSe2 and have uncovered surprisingly diverse correlated surface states thereof. These surface states exhibit the same in-plane charge density wave ordering but dramatically different electronic ground states ranging from insulating to metallic. The insulating variety of surface state shows signatures of a decoupled surface Mott layer. The metallic surface states, on the other hand, exhibit zero-bias peaks of varying strength that suggest Kondo phases arising from coupling between the Mott surface layer and the metallic bulk of 1T-TaSe2. The surface of bulk 1T-TaSe2 thus constitutes a rare realization of the periodic Anderson model covering a wide parameter regime, thereby providing a model system for accessing different correlated phenomena in the same crystal. Our results highlight the central role played by strong correlations in this material family.
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Submitted 5 September, 2022; v1 submitted 25 May, 2022;
originally announced May 2022.
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Deep Learning Coherent Diffractive Imaging
Authors:
Dillan J. Chang,
Colum M. O'Leary,
Cong Su,
Salman Kahn,
Alex Zettl,
Jim Ciston,
Peter Ercius,
Jianwei Miao
Abstract:
We report the development of deep learning coherent electron diffractive imaging at sub-angstrom resolution using convolutional neural networks (CNNs) trained with only simulated data. We experimentally demonstrate this method by applying the trained CNNs to directly recover the phase images from electron diffraction patterns of twisted hexagonal boron nitride, monolayer graphene and a Au nanopart…
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We report the development of deep learning coherent electron diffractive imaging at sub-angstrom resolution using convolutional neural networks (CNNs) trained with only simulated data. We experimentally demonstrate this method by applying the trained CNNs to directly recover the phase images from electron diffraction patterns of twisted hexagonal boron nitride, monolayer graphene and a Au nanoparticle with comparable quality to those reconstructed by a conventional ptychographic method. Fourier ring correlation between the CNN and ptychographic images indicates the achievement of a spatial resolution in the range of 0.70 and 0.55 angstrom (depending on different resolution criteria). The ability to replace iterative algorithms with CNNs and perform real-time imaging from coherent diffraction patterns is expected to find broad applications in the physical and biological sciences.
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Submitted 18 April, 2022;
originally announced April 2022.
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Imaging reconfigurable molecular concentration on a graphene field-effect transistor
Authors:
Franklin Liou,
Hsin-Zon Tsai,
Andrew S. Aikawa,
Kyler C. Natividad,
Eric Tang,
Ethan Ha,
Alexander Riss,
Kenji Watanabe,
Takashi Taniguchi,
Johannes Lischner,
Alex Zettl,
Michael F. Crommie
Abstract:
The spatial arrangement of adsorbates deposited onto a clean surface in vacuum typically cannot be reversibly tuned. Here we use scanning tunneling microscopy to demonstrate that molecules deposited onto graphene field-effect transistors exhibit reversible, electrically-tunable surface concentration. Continuous gate-tunable control over the surface concentration of charged F4TCNQ molecules was ach…
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The spatial arrangement of adsorbates deposited onto a clean surface in vacuum typically cannot be reversibly tuned. Here we use scanning tunneling microscopy to demonstrate that molecules deposited onto graphene field-effect transistors exhibit reversible, electrically-tunable surface concentration. Continuous gate-tunable control over the surface concentration of charged F4TCNQ molecules was achieved on a graphene FET at T = 4.5K. This capability enables precisely controlled impurity doping of graphene devices and also provides a new method for determining molecular energy level alignment based on the gate-dependence of molecular concentration. The gate-tunable molecular concentration can be explained by a dynamical molecular rearrangement process that reduces total electronic energy by maintaining Fermi level pinning in the device substrate. Molecular surface concentration in this case is fully determined by the device back-gate voltage, its geometric capacitance, and the energy difference between the graphene Dirac point and the molecular LUMO level.
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Submitted 15 September, 2021;
originally announced September 2021.
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Left-Definite Variations of the Classical Fourier Expansion Theorem, Part II
Authors:
Lance L. Littlejohn,
Edward L. Smith,
Anton Zettl
Abstract:
In 2002, Littlejohn and Wellman developed a general left-definite theory for arbitrary self-adjoint operators in a Hilbert space that are bounded below by a positive constant. Zettl and Littlejohn, in 2005, applied this general theory to the classical second-order Fourier operator with periodic boundary boundary conditions. In this paper, we construct sequences of left-definite Hilbert spaces…
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In 2002, Littlejohn and Wellman developed a general left-definite theory for arbitrary self-adjoint operators in a Hilbert space that are bounded below by a positive constant. Zettl and Littlejohn, in 2005, applied this general theory to the classical second-order Fourier operator with periodic boundary boundary conditions. In this paper, we construct sequences of left-definite Hilbert spaces $\{H_{n}\}_{n \in \mathbb{N}}$ and left-definite self-adjoint operators $\{A_{n}\}_{n \in \mathbb{N}}$ associated with the Fourier operator with semi-periodic boundary conditions. We obtain explicit formulas for the domain of the square root of the self-adjoint operator $A$ obtained from this boundary value problem as well as explicit representations of the domains $\mathcal{D}(A^{n/2})$ for all positive integers $n$. Furthermore, a Fourier expansion theorem is given in each left-definite space $H_{n}$.
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Submitted 3 September, 2021;
originally announced September 2021.
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Correlated interlayer exciton insulator in double layers of monolayer WSe2 and moiré WS2/WSe2
Authors:
Zuocheng Zhang,
Emma C. Regan,
Danqing Wang,
Wenyu Zhao,
Shaoxin Wang,
Mohammed Sayyad,
Kentaro Yumigeta,
Kenji Watanabe,
Takashi Taniguchi,
Sefaattin Tongay,
Michael Crommie,
Alex Zettl,
Michael P. Zaletel,
Feng Wang
Abstract:
Moiré superlattices in van der Waals heterostructures have emerged as a powerful tool for engineering novel quantum phenomena. Here we report the observation of a correlated interlayer exciton insulator in a double-layer heterostructure composed of a WSe2 monolayer and a WS2/WSe2 moiré bilayer that are separated by an ultrathin hexagonal boron nitride (hBN). The moiré WS2/WSe2 bilayer features a M…
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Moiré superlattices in van der Waals heterostructures have emerged as a powerful tool for engineering novel quantum phenomena. Here we report the observation of a correlated interlayer exciton insulator in a double-layer heterostructure composed of a WSe2 monolayer and a WS2/WSe2 moiré bilayer that are separated by an ultrathin hexagonal boron nitride (hBN). The moiré WS2/WSe2 bilayer features a Mott insulator state at hole density p/p0 = 1, where p0 corresponds to one hole per moiré lattice site. When electrons are added to the Mott insulator in the WS2/WSe2 moiré bilayer and an equal number of holes are injected into the WSe2 monolayer, a new interlayer exciton insulator emerges with the holes in the WSe2 monolayer and the electrons in the doped Mott insulator bound together through interlayer Coulomb interactions. The excitonic insulator is stable up to a critical hole density of ~ 0.5p0 in the WSe2 monolayer, beyond which the system becomes metallic. Our study highlights the opportunities for realizing novel quantum phases in double-layer moiré systems due to the interplay between the moiré flat band and strong interlayer electron interactions.
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Submitted 16 August, 2021;
originally announced August 2021.
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Tuning color centers at a twisted interface
Authors:
Cong Su,
Fang Zhang,
Salman Kahn,
Brian Shevitski,
Jingwei Jiang,
Chunhui Dai,
Alex Ungar,
Ji-Hoon Park,
Kenji Watanabe,
Takashi Taniguchi,
Jing Kong,
Zikang Tang,
Wenqing Zhang,
Feng Wang,
Michael Crommie,
Steven G. Louie,
Shaul Aloni,
Alex Zettl
Abstract:
Color center is a promising platform for quantum technologies, but their application is hindered by the typically random defect distribution and complex mesoscopic environment. Employing cathodoluminescence, we demonstrate that an ultraviolet-emitting single photon emitter can be readily activated and controlled on-demand at the twisted interface of two hexagonal boron nitride flakes. The brightne…
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Color center is a promising platform for quantum technologies, but their application is hindered by the typically random defect distribution and complex mesoscopic environment. Employing cathodoluminescence, we demonstrate that an ultraviolet-emitting single photon emitter can be readily activated and controlled on-demand at the twisted interface of two hexagonal boron nitride flakes. The brightness of the color center can be enhanced by two orders of magnitude by altering the twist angle. Additionally, a brightness modulation of nearly 100% of this color center is achieved by an external voltage. Our ab-initio GW calculations suggest that the emission is correlated to nitrogen vacancies and that a twist-induced moiré potential facilitates electron-hole recombination. This mechanism is further exploited to draw nanoscale color center patterns using electron beams.
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Submitted 10 August, 2021;
originally announced August 2021.
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Imaging gate-tunable Tomonaga-Luttinger liquids in 1H-MoSe$_2$ mirror twin boundaries
Authors:
Tiancong Zhu,
Wei Ruan,
Yan-Qi Wang,
Hsin-Zon Tsai,
Shuopei Wang,
Canxun Zhang,
Tianye Wang,
Franklin Liou,
Kenji Watanabe,
Takashi Taniguchi,
Jeffrey B. Neaton,
Alex Weber-Bargioni,
Alex Zettl,
Ziqiang Qiu,
Guangyu Zhang,
Feng Wang,
Joel E. Moore,
Michael F. Crommie
Abstract:
One-dimensional electron systems (1DESs) exhibit properties that are fundamentally different from higher-dimensional systems. For example, electron-electron interactions in 1DESs have been predicted to induce Tomonaga-Luttinger liquid behavior. Naturally-occurring grain boundaries in single-layer semiconducting transition metal dichalcogenides provide 1D conducting channels that have been proposed…
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One-dimensional electron systems (1DESs) exhibit properties that are fundamentally different from higher-dimensional systems. For example, electron-electron interactions in 1DESs have been predicted to induce Tomonaga-Luttinger liquid behavior. Naturally-occurring grain boundaries in single-layer semiconducting transition metal dichalcogenides provide 1D conducting channels that have been proposed to host Tomonaga-Luttinger liquids, but charge density wave physics has also been suggested to explain their behavior. Clear identification of the electronic ground state of this system has been hampered by an inability to electrostatically gate such boundaries and thereby tune their charge carrier concentration. Here we present a scanning tunneling microscopy/spectroscopy study of gate-tunable mirror twin boundaries (MTBs) in single-layer 1H-MoSe$_2$ devices. Gating here enables STM spectroscopy to be performed for different MTB electron densities, thus allowing precise characterization of electron-electron interaction effects. Visualization of MTB electronic structure under these conditions allows unambiguous identification of collective density wave excitations having two distinct velocities, in quantitative agreement with the spin-charge separation predicted by finite-length Tomonaga-Luttinger-liquid theory.
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Submitted 20 August, 2021; v1 submitted 9 August, 2021;
originally announced August 2021.
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Imaging Generalized Wigner Crystal States in a WSe2/WS2 Moiré Superlattice
Authors:
Hongyuan Li,
Shaowei Li,
Emma C. Regan,
Danqing Wang,
Wenyu Zhao,
Salman Kahn,
Kentaro Yumigeta,
Mark Blei,
Takashi Taniguchi,
Kenji Watanabe,
Sefaattin Tongay,
Alex Zettl,
Michael F. Crommie,
Feng Wang
Abstract:
The Wigner crystal state, first predicted by Eugene Wigner in 1934, has fascinated condensed matter physicists for nearly 90 years2-14. Studies of two-dimensional (2D) electron gases first revealed signatures of the Wigner crystal in electrical transport measurements at high magnetic fields2-4. More recently optical spectroscopy has provided evidence of generalized Wigner crystal states in transit…
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The Wigner crystal state, first predicted by Eugene Wigner in 1934, has fascinated condensed matter physicists for nearly 90 years2-14. Studies of two-dimensional (2D) electron gases first revealed signatures of the Wigner crystal in electrical transport measurements at high magnetic fields2-4. More recently optical spectroscopy has provided evidence of generalized Wigner crystal states in transition metal dichalcogenide (TMDC) moiré superlattices. Direct observation of the 2D Wigner crystal lattice in real space, however, has remained an outstanding challenge. Scanning tunneling microscopy (STM) in principle has sufficient spatial resolution to image a Wigner crystal, but conventional STM measurements can potentially alter fragile Wigner crystal states in the process of measurement. Here we demonstrate real-space imaging of 2D Wigner crystals in WSe2/WS2 moiré heterostructures using a novel non-invasive STM spectroscopy technique. We employ a graphene sensing layer in close proximity to the WSe2/WS2 moiré superlattice for Wigner crystal imaging, where local STM tunneling current into the graphene sensing layer is modulated by the underlying electron lattice of the Wigner crystal in the WSe2/WS2 heterostructure. Our measurement directly visualizes different lattice configurations associated with Wigner crystal states at fractional electron fillings of n = 1/3, 1/2, and 2/3, where n is the electron number per site. The n=1/3 and n=2/3 Wigner crystals are observed to exhibit a triangle and a honeycomb lattice, respectively, in order to minimize nearest-neighbor occupations. The n = 1/2 state, on the other hand, spontaneously breaks the original C3 symmetry and forms a stripe structure in real space. Our study lays a solid foundation toward the fundamental understanding of rich Wigner crystal states in WSe2/WS2 moiré heterostructures.
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Submitted 19 June, 2021;
originally announced June 2021.
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Efficient Fizeau Drag from Dirac electrons in monolayer graphene
Authors:
Wenyu Zhao,
Sihan Zhao,
Hongyuan Li,
Sheng Wang,
Shaoxin Wang,
M. Iqbal Bakti Utama,
Salman Kahn,
Yue Jiang,
Xiao Xiao,
SeokJae Yoo,
Kenji Watanabe,
Takashi Taniguchi,
Alex Zettl,
Feng Wang
Abstract:
Fizeau demonstrated in 1850 that the speed of light can be modified when it is propagating in moving media. Can we achieve such control of the light speed efficiently with a fast-moving electron media by passing electrical current? Because the strong electromagnetic coupling between the electron and light leads to the collective excitation of plasmon polaritons, it will manifest as the plasmonic D…
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Fizeau demonstrated in 1850 that the speed of light can be modified when it is propagating in moving media. Can we achieve such control of the light speed efficiently with a fast-moving electron media by passing electrical current? Because the strong electromagnetic coupling between the electron and light leads to the collective excitation of plasmon polaritons, it will manifest as the plasmonic Doppler effect. Experimental observation of the plasmonic Doppler effect in electronic system has been challenge because the plasmon propagation speed is much faster than the electron drift velocity in conventional noble metals. Here, we report direct observation of Fizeau drag of plasmon polaritons in strongly biased graphene by exploiting the high electron mobility and the slow plasmon propagation of massless Dirac electrons. The large bias current in graphene creates a fast drifting Dirac electron medium hosting the plasmon polariton. It results in nonreciprocal plasmon propagation, where plasmons moving with the drifting electron media propagate at an enhanced speed. We measure the Doppler-shifted plasmon wavelength using a cryogenic near-field infrared nanoscopy, which directly images the plasmon polariton mode in the biased graphene at low temperature. We observe a plasmon wavelength difference up to 3.6% between plasmon moving along and against the drifting electron media. Our findings on the plasmonic Doppler effect open new opportunities for electrical control of non-reciprocal surface plasmon polaritons in nonequilibrium systems.
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Submitted 3 June, 2021;
originally announced June 2021.
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Revealing the Brønsted-Evans-Polanyi Relation in Halide-Activated Fast MoS2 Growth Towards Millimeter-Sized 2D Crystals
Authors:
Qingqing Ji,
Cong Su,
Nannan Mao,
Xuezeng Tian,
Juan-Carlos Idrobo,
Jianwei Miao,
William A. Tisdale,
Alex Zettl,
Ju Li,
Jing Kong
Abstract:
Achieving large-size two-dimensional (2D) crystals is key to fully exploiting their remarkable functionalities and application potentials. Chemical vapor deposition (CVD) growth of 2D semiconductors such as monolayer MoS2 has been reported to be activated by halide salts, yet clear identification of the underlying mechanism remains elusive. Here we provide unambiguous experimental evidence showing…
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Achieving large-size two-dimensional (2D) crystals is key to fully exploiting their remarkable functionalities and application potentials. Chemical vapor deposition (CVD) growth of 2D semiconductors such as monolayer MoS2 has been reported to be activated by halide salts, yet clear identification of the underlying mechanism remains elusive. Here we provide unambiguous experimental evidence showing that the MoS2 growth dynamics are halogen-dependent through the Brønsted-Evans-Polanyi relation, based on which we build a growth model by considering MoS2 edge passivation by halogens, and theoretically reproduces the trend of our experimental observations. These mechanistic understandings enable us to further optimize the fast growth of MoS2 and reach record-large domain sizes that should facilitate practical applications.
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Submitted 11 March, 2021;
originally announced March 2021.
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Imaging local discharge cascades for correlated electrons in WS2/WSe2 moiré superlattices
Authors:
Hongyuan Li,
Shaowei Li,
Mit H. Naik,
Jingxu Xie,
Xinyu Li,
Emma Regan,
Danqing Wang,
Wenyu Zhao,
Kentaro Yumigeta,
Mark Blei,
Takashi Taniguchi,
Kenji Watanabe,
Sefaattin Tongay,
Alex Zettl,
Steven G. Louie,
Michael F. Crommie,
Feng Wang
Abstract:
Transition metal dichalcogenide (TMD) moiré heterostructures provide an ideal platform to explore the extended Hubbard model1 where long-range Coulomb interactions play a critical role in determining strongly correlated electron states. This has led to experimental observations of Mott insulator states at half filling2-4 as well as a variety of extended Wigner crystal states at different fractiona…
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Transition metal dichalcogenide (TMD) moiré heterostructures provide an ideal platform to explore the extended Hubbard model1 where long-range Coulomb interactions play a critical role in determining strongly correlated electron states. This has led to experimental observations of Mott insulator states at half filling2-4 as well as a variety of extended Wigner crystal states at different fractional fillings5-9. Microscopic understanding of these emerging quantum phases, however, is still lacking. Here we describe a novel scanning tunneling microscopy (STM) technique for local sensing and manipulation of correlated electrons in a gated WS2/WSe2 moiré superlattice that enables experimental extraction of fundamental extended Hubbard model parameters. We demonstrate that the charge state of local moiré sites can be imaged by their influence on STM tunneling current, analogous to the charge-sensing mechanism in a single-electron transistor. In addition to imaging, we are also able to manipulate the charge state of correlated electrons. Discharge cascades of correlated electrons in the moiré superlattice are locally induced by ramping the STM bias, thus enabling the nearest-neighbor Coulomb interaction (UNN) to be estimated. 2D mapping of the moiré electron charge states also enables us to determine onsite energy fluctuations at different moiré sites. Our technique should be broadly applicable to many semiconductor moiré systems, offering a powerful new tool for microscopic characterization and control of strongly correlated states in moiré superlattices.
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Submitted 16 February, 2021;
originally announced February 2021.
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Ultra-Narrow TaS2 Nanoribbons
Authors:
Jeffrey D. Cain,
Sehoon Oh,
Amin Azizi,
Scott Stonemeyer,
Mehmet Dogan,
Markus Thiel,
Peter Ercius,
Marvin L. Cohen,
Alex Zettl
Abstract:
Imposing additional confinement in two-dimensional (2D) materials can yield further control over the associated electronic, optical, and topological properties. However, synthesis of ultra-narrow nanoribbons (NRs) remains a challenge, particularly for the transition metal dichalcogenides (TMDs), and synthesizing TMD NRs narrower than 50 nm has remained elusive. Here, we report the vapor-phase synt…
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Imposing additional confinement in two-dimensional (2D) materials can yield further control over the associated electronic, optical, and topological properties. However, synthesis of ultra-narrow nanoribbons (NRs) remains a challenge, particularly for the transition metal dichalcogenides (TMDs), and synthesizing TMD NRs narrower than 50 nm has remained elusive. Here, we report the vapor-phase synthesis of ultra-narrow TaS2 NRs. The NRs are grown within the hollow cavity of carbon nanotubes, thereby limiting their lateral dimensions and layer number, while simultaneously stabilizing them against the environment. The NRs reach the monolayer (ML) limit and exhibit widths as low as 2.5 nm. Atomic-resolution scanning transmission electron microscopy (STEM) reveals the detailed atomic structure of the ultra-narrow NRs and we observe a hitherto unseen atomic structure supermodulation phenomenon of ordered defect arrays within the NRs. First-principles calculations based on density functional theory (DFT) show the presence of flat bands, as well as edge- and boundary-localized states, and help identify the atomic configuration of the supermodulation. Nanotube-templated synthesis represents a unique, transferable, and broadly deployable route toward ultra-narrow TMD NR growth.
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Submitted 9 December, 2020;
originally announced December 2020.
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Stabilization of NbTe3, VTe3, and TiTe3 via Nanotube Encapsulation
Authors:
Scott Stonemeyer,
Jeffrey D. Cain,
Sehoon Oh,
Amin Azizi,
Malik Elasha,
Markus Thiel,
Chengyu Song,
Peter Ercius,
Marvin L. Cohen,
Alex Zettl
Abstract:
The structure of MX3 transition metal trichalcogenides (TMTs, with M a transition metal and X a chalcogen) is typified by one-dimensional (1D) chains weakly bound together via van der Waals interactions. This structural motif is common across a range of M and X atoms (e.g. NbSe3, HfTe3, TaS3), but not all M and X combinations are stable. We report here that three new members of the MX3 family whic…
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The structure of MX3 transition metal trichalcogenides (TMTs, with M a transition metal and X a chalcogen) is typified by one-dimensional (1D) chains weakly bound together via van der Waals interactions. This structural motif is common across a range of M and X atoms (e.g. NbSe3, HfTe3, TaS3), but not all M and X combinations are stable. We report here that three new members of the MX3 family which are not stable in bulk, specifically NbTe3, VTe3, and TiTe3, can be synthesized in the few- to single-chain limit via nano-confined growth within the stabilizing cavity of multi-walled carbon nanotubes. Transmission electron microscopy (TEM) and atomic-resolution scanning transmission electron microscopy (STEM) reveal the chain-like nature and the detailed atomic structure. The synthesized materials exhibit behavior unique to few-chain quasi-1D structures, such as multi-chain spiraling and a trigonal anti-prismatic rocking distortion in the single-chain limit. Density functional theory (DFT) calculations provide insight into the crystal structure and stability of the materials, as well as their electronic structure.
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Submitted 22 September, 2020;
originally announced September 2020.
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Visualizing delocalized correlated electronic states in twisted double bilayer graphene
Authors:
Canxun Zhang,
Tiancong Zhu,
Salman Kahn,
Shaowei Li,
Birui Yang,
Charlotte Herbig,
Xuehao Wu,
Hongyuan Li,
Kenji Watanabe,
Takashi Taniguchi,
Stefano Cabrini,
Alex Zettl,
Michael P. Zaletel,
Feng Wang,
Michael F. Crommie
Abstract:
The discovery of interaction-driven insulating and superconducting phases in moiré van der Waals heterostructures has sparked considerable interest in understanding the novel correlated physics of these systems. While a significant number of studies have focused on twisted bilayer graphene, correlated insulating states and a superconductivity-like transition up to 12 K have been reported in recent…
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The discovery of interaction-driven insulating and superconducting phases in moiré van der Waals heterostructures has sparked considerable interest in understanding the novel correlated physics of these systems. While a significant number of studies have focused on twisted bilayer graphene, correlated insulating states and a superconductivity-like transition up to 12 K have been reported in recent transport measurements of twisted double bilayer graphene. Here we present a scanning tunneling microscopy and spectroscopy study of gate-tunable twisted double bilayer graphene devices. We observe splitting of the van Hove singularity peak by ~20 meV at half-filling of the conduction flat band, with a corresponding reduction of the local density of states at the Fermi level. By mapping the tunneling differential conductance we show that this correlated system exhibits energetically split states that are spatially delocalized throughout the different regions in the moiré unit cell, inconsistent with order originating solely from onsite Coulomb repulsion within strongly-localized orbitals. We have performed self-consistent Hartree-Fock calculations that suggest exchange-driven spontaneous symmetry breaking in the degenerate conduction flat band is the origin of the observed correlated state. Our results provide new insight into the nature of electron-electron interactions in twisted double bilayer graphene and related moiré systems.
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Submitted 22 March, 2021; v1 submitted 17 August, 2020;
originally announced August 2020.
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Imaging moiré flat bands in 3D reconstructed WSe2/WS2 superlattices
Authors:
Hongyuan Li,
Shaowei Li,
Mit H. Naik,
Jingxu Xie,
Xinyu Li,
Jiayin Wang,
Emma Regan,
Danqing Wang,
Wenyu Zhao,
Sihan Zhao,
Salman Kahn,
Kentaro Yumigeta,
Mark Blei,
Takashi Taniguchi,
Kenji Watanabe,
Sefaattin Tongay,
Alex Zettl,
Steven G. Louie,
Feng Wang,
Michael F. Crommie
Abstract:
Moiré superlattices in transition metal dichalcogenide (TMD) heterostructures can host novel correlated quantum phenomena due to the interplay of narrow moiré flat bands and strong, long-range Coulomb interactions1-5. However, microscopic knowledge of the atomically-reconstructed moiré superlattice and resulting flat bands is still lacking, which is critical for fundamental understanding and contr…
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Moiré superlattices in transition metal dichalcogenide (TMD) heterostructures can host novel correlated quantum phenomena due to the interplay of narrow moiré flat bands and strong, long-range Coulomb interactions1-5. However, microscopic knowledge of the atomically-reconstructed moiré superlattice and resulting flat bands is still lacking, which is critical for fundamental understanding and control of the correlated moiré phenomena. Here we quantitatively study the moiré flat bands in three-dimensional (3D) reconstructed WSe2/WS2 moiré superlattices by comparing scanning tunneling spectroscopy (STS) of high quality exfoliated TMD heterostructure devices with ab initio simulations of TMD moiré superlattices. A strong 3D buckling reconstruction accompanied by large in-plane strain redistribution is identified in our WSe2/WS2 moiré heterostructures. STS imaging demonstrates that this results in a remarkably narrow and highly localized K-point moiré flat band at the valence band edge of the heterostructure. A series of moiré flat bands are observed at different energies that exhibit varying degrees of localization. Our observations contradict previous simplified theoretical models but agree quantitatively with ab initio simulations that fully capture the 3D structural reconstruction. Here the strain redistribution and 3D buckling dominate the effective moiré potential and result in moiré flat bands at the Brillouin zone K points.
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Submitted 12 July, 2020;
originally announced July 2020.
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Layer-Dependent Topological Phase in a Two-Dimensional Quasicrystal and Approximant
Authors:
Jeffrey D. Cain,
Amin Azizi,
Matthias Conrad,
Sinéad M. Griffin,
Alex Zettl
Abstract:
Electronic and topological properties of materials are derived from the interplay between crystalline symmetry and dimensionality. Simultaneously introducing 'forbidden' symmetries via quasiperiodic ordering with low-dimensionality into a material system promises the emergence of new physical phenomena. Here, we isolate a two-dimensional chalcogenide quasicrystal and approximant, and investigate a…
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Electronic and topological properties of materials are derived from the interplay between crystalline symmetry and dimensionality. Simultaneously introducing 'forbidden' symmetries via quasiperiodic ordering with low-dimensionality into a material system promises the emergence of new physical phenomena. Here, we isolate a two-dimensional chalcogenide quasicrystal and approximant, and investigate associated electronic and topological properties. Ultra-thin two-dimensional layers of the materials with a composition close to Ta1.6Te, derived from a layered transition metal dichalcogenide, are isolated with standard exfoliation techniques and investigated with electron diffraction and atomic-resolution scanning transmission electron microscopy. Density functional theory calculations and symmetry analysis of the large unit-cell crystalline approximant of the quasicrystal Ta21Te13 reveal the presence of symmetry protected nodal crossings in the quasicrystalline and approximate phases whose presence is tunable by layer number. Our study provides a platform for the exploration of physics in quasicrystalline low-dimensional materials and the interconnected nature of topology, dimensionality and symmetry in electronic systems.
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Submitted 10 July, 2020;
originally announced July 2020.
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Autocorrected Off-axis Holography of 2D Materials
Authors:
Felix Kern,
Martin Linck,
Daniel Wolf,
Nasim Alem,
Himani Arora,
Sibylle Gemming,
Artur Erbe,
Alex Zettl,
Bernd Büchner,
Axel Lubk
Abstract:
The reduced dimensionality in two-dimensional materials leads a wealth of unusual properties, which are currently explored for both fundamental and applied sciences. In order to study the crystal structure, edge states, the formation of defects and grain boundaries, or the impact of adsorbates, high resolution microscopy techniques are indispensible. Here we report on the development of an electro…
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The reduced dimensionality in two-dimensional materials leads a wealth of unusual properties, which are currently explored for both fundamental and applied sciences. In order to study the crystal structure, edge states, the formation of defects and grain boundaries, or the impact of adsorbates, high resolution microscopy techniques are indispensible. Here we report on the development of an electron holography (EH) transmission electron microscopy (TEM) technique, which facilitates high spatial resolution by an automatic correction of geometric aberrations. Distinguished features of EH beyond conventional TEM imaging are the gap-free spatial information signal transfer and higher dose efficiency for certain spatial frequency bands as well as direct access to the projected electrostatic potential of the 2D material. We demonstrate these features at the example of h-BN, at which we measure the electrostatic potential as a function of layer number down to the monolayer limit and obtain evidence for a systematic increase of the potential at the zig-zag edges.
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Submitted 25 June, 2020; v1 submitted 24 June, 2020;
originally announced June 2020.
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Ultra-high-resolution imaging of moiré lattices and superstructures using scanning microwave impedance microscopy under ambient conditions
Authors:
Kyunghoon Lee,
M. Iqbal Bakti Utama,
Salman Kahn,
Appalakondaiah Samudrala,
Nicolas Leconte,
Birui Yang,
Shuopei Wang,
Kenji Watanabe,
Takashi Taniguchi,
Guangyu Zhang,
Alexander Weber-Bargioni,
Michael Crommie,
Paul D. Ashby,
Jeil Jung,
Feng Wang,
Alex Zettl
Abstract:
Two-dimensional heterostructures with layers of slightly different lattice vectors exhibit a new periodic structure known as moire lattices. Moire lattice formation provides a powerful new way to engineer the electronic structure of two-dimensional materials for realizing novel correlated and topological phenomena. In addition, superstructures of moire lattices can emerge from multiple misaligned…
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Two-dimensional heterostructures with layers of slightly different lattice vectors exhibit a new periodic structure known as moire lattices. Moire lattice formation provides a powerful new way to engineer the electronic structure of two-dimensional materials for realizing novel correlated and topological phenomena. In addition, superstructures of moire lattices can emerge from multiple misaligned lattice vectors or inhomogeneous strain distribution, which offers an extra degree of freedom in the electronic band structure design. High-resolution imaging of the moire lattices and superstructures is critical for quantitative understanding of emerging moire physics. Here we report the nanoscale imaging of moire lattices and superstructures in various graphene-based samples under ambient conditions using an ultra-high-resolution implementation of scanning microwave impedance microscopy. We show that, quite remarkably, although the scanning probe tip has a gross radius of ~100 nm, an ultra-high spatial resolution in local conductivity profiles better than 5 nm can be achieved. This resolution enhancement not only enables to directly visualize the moire lattices in magic-angle twisted double bilayer graphene and composite super-moire lattices, but also allows design path toward artificial synthesis of novel moire superstructures such as the Kagome moire from the interplay and the supermodulation between twisted graphene and hexagonal boron nitride layers.
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Submitted 6 June, 2020;
originally announced June 2020.
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High-Performance Atomically-Thin Room-Temperature NO2 Sensor
Authors:
Amin Azizi,
Mehmet Dogan,
Hu Long,
Jeffrey D. Cain,
Kyunghoon Lee,
Rahmatollah Eskandari,
Alessandro Varieschi,
Emily C. Glazer,
Marvin L Cohen,
Alex Zettl
Abstract:
The development of room-temperature sensing devices for detecting small concentrations of molecular species is imperative for a wide range of low-power sensor applications. We demonstrate a room-temperature, highly sensitive, selective, and reversible chemical sensor based on a monolayer of the transition metal dichalcogenide Re0.5Nb0.5S2. The sensing device exhibits thickness dependent carrier ty…
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The development of room-temperature sensing devices for detecting small concentrations of molecular species is imperative for a wide range of low-power sensor applications. We demonstrate a room-temperature, highly sensitive, selective, and reversible chemical sensor based on a monolayer of the transition metal dichalcogenide Re0.5Nb0.5S2. The sensing device exhibits thickness dependent carrier type, and upon exposure to NO2 molecules, its electrical resistance considerably increases or decreases depending on the layer number. The sensor is selective to NO2 with only minimal response to other gases such as NH3, CH2O, and CO2. In the presence of humidity, not only are the sensing properties not deteriorated, but also the monolayer sensor shows complete reversibility with fast recovery at room temperature. We present a theoretical analysis of the sensing platform and identify the atomically-sensitive transduction mechanism.
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Submitted 16 July, 2020; v1 submitted 4 March, 2020;
originally announced March 2020.
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Identifying Carbon as the Source of Visible Single Photon Emission from Hexagonal Boron Nitride
Authors:
Noah Mendelson,
Dipankar Chugh,
Jeffrey R. Reimers,
Tin S. Cheng,
Andreas Gottscholl,
Hu Long,
Christopher J. Mellor,
Alex Zettl,
Vladimir Dyakonov,
Peter H. Beton,
Sergei V. Novikov,
Chennupati Jagadish,
Hark Hoe Tan,
Michael J. Ford,
Milos Toth,
Carlo Bradac,
Igor Aharonovich
Abstract:
Single photon emitters (SPEs) in hexagonal boron nitride (hBN) have garnered significant attention over the last few years due to their superior optical properties. However, despite the vast range of experimental results and theoretical calculations, the defect structure responsible for the observed emission has remained elusive. Here, by controlling the incorporation of impurities into hBN and by…
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Single photon emitters (SPEs) in hexagonal boron nitride (hBN) have garnered significant attention over the last few years due to their superior optical properties. However, despite the vast range of experimental results and theoretical calculations, the defect structure responsible for the observed emission has remained elusive. Here, by controlling the incorporation of impurities into hBN and by comparing various synthesis methods, we provide direct evidence that the visible SPEs are carbon related. Room temperature optically detected magnetic resonance (ODMR) is demonstrated on ensembles of these defects. We also perform ion implantation experiments and confirm that only carbon implantation creates SPEs in the visible spectral range. Computational analysis of hundreds of potential carbon-based defect transitions suggest that the emission results from the negatively charged VBCN- defect, which experiences long-range out-of-plane deformations and is environmentally sensitive. Our results resolve a long-standing debate about the origin of single emitters at the visible range in hBN and will be key to deterministic engineering of these defects for quantum photonic devices.
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Submitted 20 April, 2020; v1 submitted 2 March, 2020;
originally announced March 2020.
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The ultrafast onset of exciton formation in 2D semiconductors
Authors:
Chiara Trovatello,
Florian Katsch,
Nicholas J. Borys,
Malte Selig,
Kaiyuan Yao,
Rocio Borrego-Varillas,
Francesco Scotognella,
Ilka Kriegel,
Aiming Yan,
Alex Zettl,
P. James Schuck,
Andreas Knorr,
Giulio Cerullo,
Stefano Dal Conte
Abstract:
The equilibrium and non-equilibrium optical properties of single-layer transition metal dichalcogenides (TMDs) are determined by strongly bound excitons. Exciton relaxation dynamics in TMDs have been extensively studied by time-domain optical spectroscopies. However, the formation dynamics of excitons following non-resonant photoexcitation of free electron-hole pairs have been challenging to direc…
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The equilibrium and non-equilibrium optical properties of single-layer transition metal dichalcogenides (TMDs) are determined by strongly bound excitons. Exciton relaxation dynamics in TMDs have been extensively studied by time-domain optical spectroscopies. However, the formation dynamics of excitons following non-resonant photoexcitation of free electron-hole pairs have been challenging to directly probe because of their inherently fast timescales. Here we use extremely short optical pulses to non-resonantly excite an electron-hole plasma and show the formation of two-dimensional excitons in single-layer MoS2 on the timescale of 30 fs via the induced changes to photo-absorption. These formation dynamics are significantly faster than in conventional 2D quantum wells and are attributed to the intense Coulombic interactions present in 2D TMDs. A theoretical model of a coherent polarization that dephases and relaxes to an incoherent exciton population reproduces the experimental dynamics on the sub-100-fs timescale and sheds light into the underlying mechanism of how the lowest-energy excitons, which are the most important for optoelectronic applications, form from higher-energy excitations. Importantly, a phonon-mediated exciton cascade from higher energy states to the ground excitonic state is found to be the rate-limiting process. These results set an ultimate timescale of the exciton formation in TMDs and elucidate the exceptionally fast physical mechanism behind this process.
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Submitted 17 February, 2020;
originally announced February 2020.
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Electron Beam-Induced Nanopores in Bernal-Stacked Hexagonal Boron Nitride
Authors:
Mehmet Dogan,
S. Matt Gilbert,
Thang Pham,
Brian Shevitski,
Peter Ercius,
Shaul Aloni,
Alex Zettl,
Marvin L. Cohen
Abstract:
Controlling the size and shape of nanopores in two-dimensional materials is a key challenge in applications such as DNA sequencing, sieving, and quantum emission in artificial atoms. We here investigate experimentally and theoretically triangular vacancies in (unconventional) Bernal-stacked AB-h-BN formed using a high-energy electron beam. Due to the geometric configuration of AB-h-BN, triangular…
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Controlling the size and shape of nanopores in two-dimensional materials is a key challenge in applications such as DNA sequencing, sieving, and quantum emission in artificial atoms. We here investigate experimentally and theoretically triangular vacancies in (unconventional) Bernal-stacked AB-h-BN formed using a high-energy electron beam. Due to the geometric configuration of AB-h-BN, triangular pores in different layers are aligned, and their sizes are controlled by the duration of the electron irradiation. Interlayer covalent bonding at the vacancy edge is not favored, as opposed to what occurs in the more common AA'-stacked BN. A variety of monolayer, concentric and bilayer pores in bilayer AB-h-BN are observed in high-resolution transmission electron microscopy and characterized using ab initio simulations. Bilayer pores in AB-h-BN are commonly formed, and grow without breaking the bilayer character. Nanopores in AB-h-BN exhibit a wide range of electronic properties, ranging from half-metallic to non-magnetic and magnetic semiconducting. Therefore, because of the controllability of the pore size, the electronic structure is also highly controllable in these systems, and can potentially be tuned for particular applications.
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Submitted 26 June, 2020; v1 submitted 13 February, 2020;
originally announced February 2020.
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Characterizing Transition-Metal Dichalcogenide Thin-Films using Hyperspectral Imaging and Machine Learning
Authors:
Brian Shevitski,
Christopher T. Chen,
Christoph Kastl,
Tevye Kuykendall,
Adam Schwartzberg,
Shaul Aloni,
Alex Zettl
Abstract:
Atomically thin polycrystalline transition-metal dichalcogenides (TMDs) are relevant to both fundamental science investigation and applications. TMD thin-films present uniquely difficult challenges to effective nanoscale crystalline characterization. Here we present a method to quickly characterize the nanocrystalline grain structure and texture of monolayer WS2 films using scanning nanobeam elect…
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Atomically thin polycrystalline transition-metal dichalcogenides (TMDs) are relevant to both fundamental science investigation and applications. TMD thin-films present uniquely difficult challenges to effective nanoscale crystalline characterization. Here we present a method to quickly characterize the nanocrystalline grain structure and texture of monolayer WS2 films using scanning nanobeam electron diffraction coupled with multivariate statistical analysis of the resulting data. Our analysis pipeline is highly generalizable and is a useful alternative to the time consuming, complex, and system-dependent methodology traditionally used to analyze spatially resolved electron diffraction measurements.
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Submitted 29 January, 2020;
originally announced January 2020.
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Emergence of Topologically Non-trivial Spin-polarized States in a Segmented Linear Chain
Authors:
Thang Pham,
Sehoon Oh,
Scott Stonemeyer,
Brian Shevitski,
Jeffrey D. Cain,
Chengyu Song,
Peter Ercius,
Marvin L. Cohen,
Alex Zettl
Abstract:
The synthesis of new materials with novel or useful properties is one of the most important drivers in the fields of condensed matter physics and materials science. Discoveries of this kind are especially significant when they point to promising future basic research and applications. Van der Waals bonded materials comprised of lower-dimensional building blocks have been shown to exhibit emergent…
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The synthesis of new materials with novel or useful properties is one of the most important drivers in the fields of condensed matter physics and materials science. Discoveries of this kind are especially significant when they point to promising future basic research and applications. Van der Waals bonded materials comprised of lower-dimensional building blocks have been shown to exhibit emergent properties when isolated in an atomically thin form1-8. Here, we report the discovery of a transition metal chalcogenide in a heretofore unknown segmented linear chain form, where basic building blocks each consisting of two hafnium atoms and nine tellurium atoms (Hf2Te9) are van der Waals bonded end-to-end. First-principle calculations based on density functional theory reveal striking crystal-symmetry-related features in the electronic structure of the segmented chain, including giant spin splitting and nontrivial topological phases of selected energy band states. Atomic-resolution scanning transmission electron microscopy reveals single segmented Hf2Te9 chains isolated within the hollow cores of carbon nanotubes, with a structure consistent with theoretical predictions. Van der Waals-bonded segmented linear chain transition metal chalcogenide materials could open up new opportunities in low-dimensional, gate-tunable, magnetic and topological crystalline systems.
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Submitted 17 January, 2020;
originally announced January 2020.
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Visualization of the flat electronic band in twisted bilayer graphene near the magic angle twist
Authors:
M. Iqbal Bakti Utama,
Roland J. Koch,
Kyunghoon Lee,
Nicolas Leconte,
Hongyuan Li,
Sihan Zhao,
Lili Jiang,
Jiayi Zhu,
Kenji Watanabe,
Takashi Taniguchi,
Paul D. Ashby,
Alexander Weber-Bargioni,
Alex Zettl,
Chris Jozwiak,
Jeil Jung,
Eli Rotenberg,
Aaron Bostwick,
Feng Wang
Abstract:
Bilayer graphene was theorized to host a moire miniband with flat dispersion if the layers are stacked at specific twist angles known as the magic angles. Recently, such twisted bilayer graphene (tBLG) with the first magic angle twist was reported to exhibit correlated insulating state and superconductivity, where the presence of the flat miniband in the system is thought to be essential for the e…
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Bilayer graphene was theorized to host a moire miniband with flat dispersion if the layers are stacked at specific twist angles known as the magic angles. Recently, such twisted bilayer graphene (tBLG) with the first magic angle twist was reported to exhibit correlated insulating state and superconductivity, where the presence of the flat miniband in the system is thought to be essential for the emergence of these ordered phases in the transport measurements. Tunneling spectroscopy and electronic compressibility measurements in tBLG have revealed a van Hove singularity that is consistent with the presence of the flat miniband. However, a direct observation of the flat dispersion in the momentum-space of such moire miniband in tBLG is still elusive. Here, we report the visualization of the flat moire miniband by using angle-resolved photoemission spectroscopy with nanoscale resolution (nanoARPES). The high spatial resolution in nanoARPES enabled the measurement of the local electronic structure of the tBLG. We clearly demonstrate the existence of the flat moire band near the charge neutrality for tBLG close to the magic angle at room temperature.
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Submitted 2 December, 2019;
originally announced December 2019.
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Optical detection of Mott and generalized Wigner crystal states in WSe2/WS2 moiré superlattices
Authors:
Emma C. Regan,
Danqing Wang,
Chenhao Jin,
M. Iqbal Bakti Utama,
Beini Gao,
Xin Wei,
Sihan Zhao,
Wenyu Zhao,
Kentaro Yumigeta,
Mark Blei,
Johan Carlstroem,
Kenji Watanabe,
Takashi Taniguchi,
Sefaattin Tongay,
Michael Crommie,
Alex Zettl,
Feng Wang
Abstract:
Moiré superlattices are emerging as a new route for engineering strongly correlated electronic states in two-dimensional van der Waals heterostructures, as recently demonstrated in the correlated insulating and superconducting states in magic-angle twisted bilayer graphene and ABC trilayer graphene/boron nitride moiré superlattices. Transition metal dichalcogenide (TMDC) moiré heterostructures pro…
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Moiré superlattices are emerging as a new route for engineering strongly correlated electronic states in two-dimensional van der Waals heterostructures, as recently demonstrated in the correlated insulating and superconducting states in magic-angle twisted bilayer graphene and ABC trilayer graphene/boron nitride moiré superlattices. Transition metal dichalcogenide (TMDC) moiré heterostructures provide another exciting model system to explore correlated quantum phenomena, with the addition of strong light-matter interactions and large spin-orbital coupling. Here we report the optical detection of strongly correlated phases in semiconducting WSe2/WS2 moiré superlattices. Our sensitive optical detection technique reveals a Mott insulator state at one hole per superlattice site (ν = 1), and surprising insulating phases at fractional filling factors ν = 1/3 and 2/3, which we assign to generalized Wigner crystallization on an underlying lattice. Furthermore, the unique spin-valley optical selection rules of TMDC heterostructures allow us to optically create and investigate low-energy spin excited states in the Mott insulator. We reveal an especially slow spin relaxation lifetime of many microseconds in the Mott insulating state, orders-of-magnitude longer than that of charge excitations. Our studies highlight novel correlated physics that can emerge in moiré superlattices beyond graphene.
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Submitted 20 October, 2019;
originally announced October 2019.
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Tunable Electronic Structure in Gallium Chalcogenide van der Waals Compounds
Authors:
Brian Shevitski,
Søren Ulstrup,
Roland J. Koch,
Hui Cai,
Sefaattin Tongay,
Luca Moreschini,
Chris Jozwiak,
Aaron Bostwick,
Alex Zettl,
Eli Rotenberg,
Shaul Aloni
Abstract:
Transition metal monochalcogenides comprise a class of two-dimensional materials with electronic band gaps that are highly sensitive to material thickness and chemical composition. Here, we explore the tunability of the electronic excitation spectrum in GaSe using angle-resolved photoemission spectroscopy. The electronic structure of the material is modified by $\textit{in-situ}$ potassium deposit…
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Transition metal monochalcogenides comprise a class of two-dimensional materials with electronic band gaps that are highly sensitive to material thickness and chemical composition. Here, we explore the tunability of the electronic excitation spectrum in GaSe using angle-resolved photoemission spectroscopy. The electronic structure of the material is modified by $\textit{in-situ}$ potassium deposition as well as by forming GaS$_{x}$Se$_{1-x}$ alloy compounds. We find that potassium decouples the top-most tetra-layer of the GaSe unit cell, leading to a substantial change of the dispersion around the valence band maximum (VBM). The observed band dispersion of a single tetralayer is consistent with a transition from the direct gap character of the bulk to the indirect gap character expected for monolayer GaSe. Upon alloying with sulfur, we observe a phase transition from AB to $\text{AA}^{\prime}$ stacking. Alloying also results in a rigid energy shift of the VBM towards higher binding energies which correlates with a blue shift in the luminescence. The increase of the band gap upon sulfur alloying does not appear to change the dispersion or character of the VBM appreciably, implying that it is possible to engineer the gap of these materials while maintaining their salient electronic properties.
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Submitted 19 September, 2019; v1 submitted 2 August, 2019;
originally announced August 2019.
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Orbital character effects in the photon energy and polarization dependence of pure C60 photoemission
Authors:
Drew W. Latzke,
Claudia Ojeda-Aristizabal,
Jonathan D. Denlinger,
Ryan Reno,
Alex Zettl,
Alessandra Lanzara
Abstract:
Recent direct experimental observation of multiple highly-dispersive C$_{60}$ valence bands has allowed for a detailed analysis of the unique photoemission traits of these features through photon energy- and polarization-dependent measurements. Previously obscured dispersions and strong photoemission traits are now revealed by specific light polarizations. The observed intensity effects prove the…
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Recent direct experimental observation of multiple highly-dispersive C$_{60}$ valence bands has allowed for a detailed analysis of the unique photoemission traits of these features through photon energy- and polarization-dependent measurements. Previously obscured dispersions and strong photoemission traits are now revealed by specific light polarizations. The observed intensity effects prove the locking in place of the C$_{60}$ molecules at low temperatures and the existence of an orientational order imposed by the substrate chosen. Most importantly, photon energy- and polarization-dependent effects are shown to be intimately linked with the orbital character of the C$_{60}$ band manifolds which allows for a more precise determination of the orbital character within the HOMO-2. Our observations and analysis provide important considerations for the connection between molecular and crystalline C$_{60}$ electronic structure, past and future band structure studies, and for increasingly popular C$_{60}$ electronic device applications, especially those making use of heterostructures.
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Submitted 30 April, 2019;
originally announced May 2019.
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Blue-Light-Emitting Color Centers in High-Quality Hexagonal Boron Nitride
Authors:
Brian Shevitski,
S. Matt Gilbert,
Christopher T. Chen,
Christoph Kastl,
Edward S. Barnard,
Ed Wong,
D. Frank Ogletree,
Kenji Watanabe,
Takashi Taniguchi,
Alex Zettl,
Shaul Aloni
Abstract:
Light emitters in wide band gap semiconductors are of great fundamental interest and have potential as optically addressable qubits. Here we describe the discovery of a new color center in high-quality hexagonal boron nitride (h-BN) with a sharp emission line at 435 nm. The emitters are activated and deactivated by electron beam irradiation and have spectral and temporal characteristics consistent…
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Light emitters in wide band gap semiconductors are of great fundamental interest and have potential as optically addressable qubits. Here we describe the discovery of a new color center in high-quality hexagonal boron nitride (h-BN) with a sharp emission line at 435 nm. The emitters are activated and deactivated by electron beam irradiation and have spectral and temporal characteristics consistent with atomic color centers weakly coupled to lattice vibrations. The emitters are conspicuously absent from commercially available h-BN and are only present in ultra-high-quality h-BN grown using a high-pressure, high-temperature Ba-B-N flux/solvent, suggesting that these emitters originate from impurities or related defects specific to this unique synthetic route. Our results imply that the light emission is activated and deactivated by electron beam manipulation of the charge state of an impurity-defect complex.
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Submitted 5 September, 2019; v1 submitted 27 April, 2019;
originally announced April 2019.
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Metal-insulator transition in quasi-one-dimensional HfTe3 in the few-chain limit
Authors:
Scott Meyer,
Thang Pham,
Sehoon Oh,
Peter Ercius,
Christian Kisielowski,
Marvin L. Cohen,
Alex Zettl
Abstract:
The quasi-one-dimensional linear chain compound HfTe3 is experimentally and theoretically explored in the few- to single-chain limit. Confining the material within the hollow core of carbon nanotubes allows isolation of the chains and prevents the rapid oxidation which plagues even bulk HfTe3. High-resolution transmission electron microscopy combined with density functional theory calculations rev…
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The quasi-one-dimensional linear chain compound HfTe3 is experimentally and theoretically explored in the few- to single-chain limit. Confining the material within the hollow core of carbon nanotubes allows isolation of the chains and prevents the rapid oxidation which plagues even bulk HfTe3. High-resolution transmission electron microscopy combined with density functional theory calculations reveals that, once the triple-chain limit is reached, the normally parallel chains spiral about each other, and simultaneously a short-wavelength trigonal anti-prismatic rocking distortion occurs that opens a significant energy gap. This results in a size-driven metal-insulator transition.
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Submitted 1 March, 2019;
originally announced March 2019.
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Observation of highly dispersive bands in pure thin film C$_{60}$
Authors:
Drew W. Latzke,
Claudia Ojeda-Aristizabal,
Sinéad M. Griffin,
Jonathan D. Denlinger,
Jeffrey B. Neaton,
Alex Zettl,
Alessandra Lanzara
Abstract:
While long-theorized, the direct observation of multiple highly dispersive C$_{60}$ valence bands has eluded researchers for more than two decades due to a variety of intrinsic and extrinsic factors. Here we report a realization of multiple highly dispersive (330-520 meV) valence bands in pure thin film C$_{60}$ on a novel substrate--the three-dimensional topological insulator Bi$_{2}$Se$_{3}$--th…
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While long-theorized, the direct observation of multiple highly dispersive C$_{60}$ valence bands has eluded researchers for more than two decades due to a variety of intrinsic and extrinsic factors. Here we report a realization of multiple highly dispersive (330-520 meV) valence bands in pure thin film C$_{60}$ on a novel substrate--the three-dimensional topological insulator Bi$_{2}$Se$_{3}$--through the use of angle-resolved photoemission spectroscopy (ARPES) and first-principles calculations. The effects of this novel substrate reducing C$_{60}$ rotational disorder are discussed. Our results provide important considerations for past and future band structure studies as well as the increasingly popular C$_{60}$ electronic device applications, especially those making use of heterostructures.
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Submitted 27 February, 2019;
originally announced February 2019.
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Resolving spin, valley, and moiré quasi-angular momentum of interlayer excitons in WSe2/WS2 heterostructures
Authors:
Chenhao Jin,
Emma C. Regan,
Danqing Wang,
M. Iqbal Bakti Utama,
Chan-Shan Yang,
Jeffrey Cain,
Ying Qin,
Yuxia Shen,
Zhiren Zheng,
Kenji Watanabe,
Takashi Taniguchi,
Sefaattin Tongay,
Alex Zettl,
Feng Wang
Abstract:
Moiré superlattices provide a powerful way to engineer properties of electrons and excitons in two-dimensional van der Waals heterostructures. The moiré effect can be especially strong for interlayer excitons, where electrons and holes reside in different layers and can be addressed separately. In particular, it was recently proposed that the moiré superlattice potential not only localizes interla…
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Moiré superlattices provide a powerful way to engineer properties of electrons and excitons in two-dimensional van der Waals heterostructures. The moiré effect can be especially strong for interlayer excitons, where electrons and holes reside in different layers and can be addressed separately. In particular, it was recently proposed that the moiré superlattice potential not only localizes interlayer exciton states at different superlattice positions, but also hosts an emerging moiré quasi-angular momentum (QAM) that periodically switches the optical selection rules for interlayer excitons at different moiré sites. Here we report the observation of multiple interlayer exciton states coexisting in a WSe2/WS2 moiré superlattice and unambiguously determine their spin, valley, and moiré QAM through novel resonant optical pump-probe spectroscopy and photoluminescence excitation spectroscopy. We demonstrate that interlayer excitons localized at different moiré sites can exhibit opposite optical selection rules due to the spatially-varying moiré QAM. Our observation reveals new opportunities to engineer interlayer exciton states and valley physics with moiré superlattices for optoelectronic and valleytronic applications.
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Submitted 15 February, 2019;
originally announced February 2019.
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Observation of Moiré Excitons in WSe2/WS2 Heterostructure Superlattices
Authors:
Chenhao Jin,
Emma C. Regan,
Aiming Yan,
M. Iqbal Bakti Utama,
Danqing Wang,
Ying Qin,
Sijie Yang,
Zhiren Zheng,
Kenji Watanabe,
Takashi Taniguchi,
Sefaattin Tongay,
Alex Zettl,
Feng Wang
Abstract:
Moiré superlattices provide a powerful tool to engineer novel quantum phenomena in two-dimensional (2D) heterostructures, where the interactions between the atomically thin layers qualitatively change the electronic band structure of the superlattice. For example, mini-Dirac points, tunable Mott insulator states, and the Hofstadter butterfly can emerge in different types of graphene/boron nitride…
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Moiré superlattices provide a powerful tool to engineer novel quantum phenomena in two-dimensional (2D) heterostructures, where the interactions between the atomically thin layers qualitatively change the electronic band structure of the superlattice. For example, mini-Dirac points, tunable Mott insulator states, and the Hofstadter butterfly can emerge in different types of graphene/boron nitride moiré superlattices, while correlated insulating states and superconductivity have been reported in twisted bilayer graphene moiré superlattices. In addition to their dramatic effects on the single particle states, moiré superlattices were recently predicted to host novel excited states, such as moiré exciton bands. Here we report the first observation of moiré superlattice exciton states in nearly aligned WSe2/WS2 heterostructures. These moiré exciton states manifest as multiple emergent peaks around the original WSe2 A exciton resonance in the absorption spectra, and they exhibit gate dependences that are distinctly different from that of the A exciton in WSe2 monolayers and in large-twist-angle WSe2/WS2 heterostructures. The observed phenomena can be described by a theoretical model where the periodic moiré potential is much stronger than the exciton kinetic energy and creates multiple flat exciton minibands. The moiré exciton bands provide an attractive platform to explore and control novel excited state of matter, such as topological excitons and a correlated exciton Hubbard model, in transition metal dichalcogenides.
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Submitted 23 December, 2018;
originally announced December 2018.
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Valley-dependent Exciton Fine Structure and Autler-Townes Doublets from Berry Phases in Monolayer Molybdenum Diselenide
Authors:
Chaw-Keong Yong,
M. Iqbal Bakti Utama,
Chin Shen Ong,
Ting Cao,
Emma C. Regan,
Jason Horng,
Yuxia Shen,
Hui Cai,
Kenji Watanabe,
Takashi Taniguchi,
Sefaattin Tongay,
Hui Deng,
Alex Zettl,
Steven G. Louie,
Feng Wang
Abstract:
The Berry phase of Bloch states can have profound effects on electron dynamics lead to novel transport phenomena, such as the anomalous Hall effect and the valley Hall effect. Recently, it was predicted that the Berry phase effect can also modify the exciton states in transition metal dichalcogenide monolayers, and lift the energy degeneracy of exciton states with opposite angular momentum through…
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The Berry phase of Bloch states can have profound effects on electron dynamics lead to novel transport phenomena, such as the anomalous Hall effect and the valley Hall effect. Recently, it was predicted that the Berry phase effect can also modify the exciton states in transition metal dichalcogenide monolayers, and lift the energy degeneracy of exciton states with opposite angular momentum through an effective valley-orbital coupling. Here, we report the first observation and control of the Berry-phase induced splitting of the 2p-exciton states in monolayer molybdenum diselenide using the intraexciton optical Stark spectroscopy. We observe the time-reversal-symmetric analog of the orbital Zeeman effect resulting from the valley-dependent Berry phase, which leads to energy difference of +14 (-14) meV between the $2p^+$ and $2p^-$ exciton states in +K (-K) valley, consistent with the ordering from our ab initio GW-BSE results. In addition, we show that the light-matter coupling between intraexciton states are remarkably strong, leading to prominent valley-dependent Autler-Townes doublet under resonant driving. Our study opens up new pathways to coherently manipulate the quantum states and excitonic excitation with infrared radiation in two-dimensional semiconductors.
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Submitted 23 December, 2018;
originally announced December 2018.
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Electrons imitating light: Frustrated supercritical collapse in charged arrays on graphene
Authors:
Jiong Lu,
Hsin-Zon Tsai,
Alpin N. Tatan,
Sebastian Wickenburg,
Arash A. Omrani,
Dillon Wong,
Alexander Riss,
Erik Piatti,
Kenji Watanabe,
Takashi Taniguchi,
Alex Zettl,
Vitor M. Pereira,
Michael F. Crommie
Abstract:
The photon-like electronic dispersion of graphene bestows its charge carriers with unusual confinement properties that depend strongly on the geometry and strength of the surrounding potential. Here we report bottom-up synthesis of atomically-precise one-dimensional (1D) arrays of point charges aimed at exploring supercritical confinement of carriers in graphene for new geometries. The arrays were…
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The photon-like electronic dispersion of graphene bestows its charge carriers with unusual confinement properties that depend strongly on the geometry and strength of the surrounding potential. Here we report bottom-up synthesis of atomically-precise one-dimensional (1D) arrays of point charges aimed at exploring supercritical confinement of carriers in graphene for new geometries. The arrays were synthesized by arranging F4TCNQ molecules into a 1D lattice on back-gated graphene devices, allowing precise tuning of both the molecular charge state and the array periodicity. Dilute arrays of ionized F4TCNQ molecules are seen to behave like isolated subcritical charges but dense arrays show emergent supercriticality. In contrast to compact supercritical clusters, extended 1D charge arrays exhibit both supercritical and subcritical characteristics and belong to a new physical regime termed frustrated supercritical collapse. Here carriers in the far-field are attracted by a supercritical charge distribution, but have their fall to the center frustrated by subcritical potentials in the near-field, similar to the trapping of light by a dense cluster of stars in general relativity.
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Submitted 10 December, 2018;
originally announced December 2018.
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Microscopy of hydrogen and hydrogen-vacancy defect structures on graphene devices
Authors:
Dillon Wong,
Yang Wang,
Wuwei Jin,
Hsin-Zon Tsai,
Aaron Bostwick,
Eli Rotenberg,
Roland K. Kawakami,
Alex Zettl,
Arash A. Mostofi,
Johannes Lischner,
Michael F. Crommie
Abstract:
We have used scanning tunneling microscopy (STM) to investigate two types of hydrogen defect structures on monolayer graphene supported by hexagonal boron nitride (h-BN) in a gated field-effect transistor configuration. The first H-defect type is created by bombarding graphene with 1-keV ionized hydrogen and is identified as two hydrogen atoms bonded to a graphene vacancy via comparison of experim…
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We have used scanning tunneling microscopy (STM) to investigate two types of hydrogen defect structures on monolayer graphene supported by hexagonal boron nitride (h-BN) in a gated field-effect transistor configuration. The first H-defect type is created by bombarding graphene with 1-keV ionized hydrogen and is identified as two hydrogen atoms bonded to a graphene vacancy via comparison of experimental data to first-principles calculations. The second type of H defect is identified as dimerized hydrogen and is created by depositing atomic hydrogen having only thermal energy onto a graphene surface. Scanning tunneling spectroscopy (STS) measurements reveal that hydrogen dimers formed in this way open a new elastic channel in the tunneling conductance between an STM tip and graphene.
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Submitted 24 October, 2018;
originally announced October 2018.