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Quantum Efficiency the B-centre in hexagonal boron nitride
Authors:
Karin Yamamura,
Nathan Coste,
Helen Zhi Jie Zeng,
Milos Toth,
Mehran Kianinia,
Igor Aharonovich
Abstract:
B-centres in hexagonal boron nitride (hBN) are gaining significant research interest for quantum photonics applications due to precise emitter positioning and highly reproducible emission wavelengths. Here, we leverage the layered nature of hBN to directly measure the quantum efficiency (QE) of single B-centres. The defects were engineered in a 35 nm flake of hBN using electron beam irradiation, a…
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B-centres in hexagonal boron nitride (hBN) are gaining significant research interest for quantum photonics applications due to precise emitter positioning and highly reproducible emission wavelengths. Here, we leverage the layered nature of hBN to directly measure the quantum efficiency (QE) of single B-centres. The defects were engineered in a 35 nm flake of hBN using electron beam irradiation, and the local dielectric environment was altered by transferring a 250 nm hBN flake on top of the one containing the emitters. By analysing the resulting change in measured lifetimes, we determined the QE of B-centres in the thin flake of hBN, as well as after the transfer. Our results indicate that B-centres located in thin flakes can exhibit QEs higher than 40%. Near-unity QEs are achievable under reasonable Purcell enhancement for emitters embedded in thick flakes of hBN, highlighting their promise for quantum photonics applications.
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Submitted 12 August, 2024;
originally announced August 2024.
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Quantum Key Distribution Using a Quantum Emitter in Hexagonal Boron Nitride
Authors:
Ali Al-Juboori,
Helen Zhi Jie Zeng,
Minh Anh Phan Nguyen,
Xiaoyu Ai,
Arne Laucht,
Alexander Solntsev,
Milos Toth,
Robert Malaney,
Igor Aharonovich
Abstract:
Quantum Key Distribution (QKD) is considered the most immediate application to be widely implemented amongst a variety of potential quantum technologies. QKD enables sharing secret keys between distant users, using photons as information carriers. An ongoing endeavour is to implement these protocols in practice in a robust, and compact manner so as to be efficiently deployable in a range of real-w…
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Quantum Key Distribution (QKD) is considered the most immediate application to be widely implemented amongst a variety of potential quantum technologies. QKD enables sharing secret keys between distant users, using photons as information carriers. An ongoing endeavour is to implement these protocols in practice in a robust, and compact manner so as to be efficiently deployable in a range of real-world scenarios. Single Photon Sources (SPS) in solid-state materials are prime candidates in this respect. Here, we demonstrate a room temperature, discrete-variable quantum key distribution system using a bright single photon source in hexagonal-boron nitride, operating in free-space. Employing an easily interchangeable photon source system, we have generated keys with one million bits length, and demonstrated a secret key of approximately 70,000 bits, at a quantum bit error rate of 6%, with $\varepsilon$-security of $10^{-10}$. Our work demonstrates the first proof of concept finite-key BB84 QKD system realised with hBN defects.
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Submitted 29 March, 2023; v1 submitted 13 February, 2023;
originally announced February 2023.
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Integrated Room Temperature Single Photon Source for Quantum Key Distribution
Authors:
Helen Zhi Jie Zeng,
Minh Anh Phan Ngyuen,
Xiaoyu Ai,
Adam Bennet,
Alexander Solnstev,
Arne Laucht,
Ali Al-Juboori,
Milos Toth,
Rich Mildren,
Robert Malaney,
Igor Aharonovich
Abstract:
High-purity single photon sources (SPS) that can operate at room temperature are highly desirable for a myriad of applications, including quantum photonics and quantum key distribution. In this work, we realise an ultra-bright solid-state SPS based on an atomic defect in hexagonal boron nitride (hBN) integrated with a solid immersion lens (SIL). The SIL increases the source efficiency by a factor…
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High-purity single photon sources (SPS) that can operate at room temperature are highly desirable for a myriad of applications, including quantum photonics and quantum key distribution. In this work, we realise an ultra-bright solid-state SPS based on an atomic defect in hexagonal boron nitride (hBN) integrated with a solid immersion lens (SIL). The SIL increases the source efficiency by a factor of six, and the integrated system is capable of producing over ten million single photons per second at room temperature. Our results are promising for practical applications of SPS in quantum communication protocols.
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Submitted 27 January, 2022;
originally announced January 2022.
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Heteroepitaxial Growth and Multiferroic Properties of Mn-doped BiFeO3 films on SrTiO3 buffered III-V Semiconductor GaAs
Authors:
G. Y. Gao,
Z. B. Yang,
W. Huang,
H. Z. Zeng,
Y. Wang,
H. L. W. Chan,
W. B. Wu,
J. H. Hao
Abstract:
Epitaxial Mn-doped BiFeO3 (MBFO) thin films were grown on GaAs (001) substrate with SrTiO3 (STO) buffer layer by pulsed laser deposition. X-ray diffraction results demonstrate that the films show pure (00l) orientation, and MBFO(100)//STO(100), whereas STO (100)//GaAs (110). Piezoresponse force microscopy images and polarization versus electric field loops indicate that the MBFO films grown on GaA…
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Epitaxial Mn-doped BiFeO3 (MBFO) thin films were grown on GaAs (001) substrate with SrTiO3 (STO) buffer layer by pulsed laser deposition. X-ray diffraction results demonstrate that the films show pure (00l) orientation, and MBFO(100)//STO(100), whereas STO (100)//GaAs (110). Piezoresponse force microscopy images and polarization versus electric field loops indicate that the MBFO films grown on GaAs have an effective ferroelectric switching. The MBFO films exhibit good ferroelectric behavior (2Pr ~ 92 μC/cm2 and 2EC ~ 372 kV/cm). Ferromagnetic property with saturated magnetization of 6.5 emu/cm3 and coercive field of about 123 Oe is also found in the heterostructure at room temperature.
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Submitted 17 September, 2013;
originally announced September 2013.
