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Direct Fabrication of Atomically Defined Pores in MXenes
Authors:
Matthew G. Boebinger,
Dundar E. Yilmaz,
Ayana Ghosh,
Sudhajit Misra,
Tyler S. Mathis,
Sergei V. Kalinin,
Stephen Jesse,
Yury Gogotsi,
Adri C. T. van Duin,
Raymond R. Unocic
Abstract:
Controlled fabrication of nanopores in atomically thin two-dimensional material offers the means to create robust membranes needed for ion transport, nanofiltration, and DNA sensing. Techniques for creating nanopores have relied upon either plasma etching or direct irradiation using electrons or ions; however, aberration-corrected scanning transmission electron microscopy (STEM) offers the advanta…
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Controlled fabrication of nanopores in atomically thin two-dimensional material offers the means to create robust membranes needed for ion transport, nanofiltration, and DNA sensing. Techniques for creating nanopores have relied upon either plasma etching or direct irradiation using electrons or ions; however, aberration-corrected scanning transmission electron microscopy (STEM) offers the advantage of combining a highly energetic, sub-angstrom sized electron beam for atomic manipulation along with atomic resolution imaging. Here, we utilize a method for automated nanopore fabrication with real-time atomic visualization to enhance our mechanistic understanding of beam-induced transformations. Additionally, an electron beam simulation technique, Electron-Beam Simulator (E-BeamSim) was developed to observe the atomic movements and interactions resulting from electron beam irradiation. Using the 2D MXene Ti3C2Tx, we explore the influence of temperature on nanopore fabrication by tracking atomic transformation pathways and find that at room temperature, electron beam irradiation induces random displacement of atoms and results in a pileup of titanium atoms at the nanopore edge. This pileup was confirmed and demonstrated in E-BeamSim simulations around the small, milled area in the MXene monolayer. At elevated temperatures, the surface functional groups on MXene are effectively removed, and the mobility of atoms increases, which results in atomic transformations that lead to the selective removal of atoms layer by layer. Through controllable manufacture using e-beam milling fabrication, the production and then characterization of the fabricated defects can be better understood for future work. This work can lead to the development of defect engineering techniques within functionalized MXene layers.
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Submitted 29 November, 2023;
originally announced November 2023.
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Atomic-scale modeling of the thermal decomposition of titanium(IV)-isopropoxide
Authors:
Benazir Fazlioglu Yalcin,
Dundar E. Yilmaz,
Adri CT van Duin,
Roman Engel-Herbert
Abstract:
The metal-organic (MO) compound titanium(IV)-isopropoxide (Ti(OiPr)4, TTIP) has tremendous technological relevance for thin film growth and coating technologies, offering a low-temperature deposition route for titania and titanium-oxide-based compounds. Thermal decomposition via the release of organic ligands, a key process in any TTIP-based synthesis approach, is commonly assumed to take place on…
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The metal-organic (MO) compound titanium(IV)-isopropoxide (Ti(OiPr)4, TTIP) has tremendous technological relevance for thin film growth and coating technologies, offering a low-temperature deposition route for titania and titanium-oxide-based compounds. Thermal decomposition via the release of organic ligands, a key process in any TTIP-based synthesis approach, is commonly assumed to take place only via the beta-hydride elimination process. Here, we present reactive force field molecular dynamics (ReaxFF-MD) and metadynamics simulations that challenge this conventionally assumed scenario by revealing different, energetically preferred reaction pathways. The complete reaction scheme for the TTIP thermolysis, along with the statistics for the different ligand liberation steps and the associated reaction barriers for the bond dissociation events is presented. ReaxFF-MD simulations performed in the dilute limit realistically capture typical thin film deposition conditions, which in combination with metadynamics data, which produces free energies, constitutes a very powerful tool to quantitatively analyze the reaction dynamics of MO-based thin film growth processes and provide an atomic-scale understanding of how the remaining organic ligands detach from different titanium-containing MO fragments. The approach presented here allows for effective and straightforward identification of the undesirable temperature biasing effects in ReaxFF-MD and represents a predictive framework to identify chemical reaction pathways relevant to film growth processes at the atomic scale under realistic, experimentally relevant conditions. It enables computationally informed engineering of MO molecules with tailored decomposition and reaction pathways, and thus rapid and cost-effective advancements in MO molecule design for existing and future applications of thin film deposition and coating processes.
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Submitted 22 December, 2022;
originally announced December 2022.
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Analysis of Strain Fields in Silicon Nanocrystals
Authors:
Dündar E. Yılmaz,
Ceyhun Bulutay,
Tahir Çağın
Abstract:
Strain has a crucial effect on the optical and electronic properties of nanostructures. We calculate the atomistic strain distribution in silicon nanocrystals up to a diameter of 3.2 nm embedded in an amorphous silicon dioxide matrix. A seemingly conflicting picture arises when the strain field is expressed in terms of bond lengths versus volumetric strain. The strain profile in either case show…
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Strain has a crucial effect on the optical and electronic properties of nanostructures. We calculate the atomistic strain distribution in silicon nanocrystals up to a diameter of 3.2 nm embedded in an amorphous silicon dioxide matrix. A seemingly conflicting picture arises when the strain field is expressed in terms of bond lengths versus volumetric strain. The strain profile in either case shows uniform behavior in the core, however it becomes nonuniform within 2-3 Ådistance to the nanocrystal surface: tensile for bond lengths whereas compressive for volumetric strain. We reconsile their coexistence by an atomistic strain analysis.
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Submitted 20 May, 2009;
originally announced May 2009.
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Pathways of bond topology transitions at the interface of silicon nanocrystals and amorphous silica matrix
Authors:
D. E. Yılmaz,
C. Bulutay,
T. Çağın
Abstract:
The interface chemistry of silicon nanocrystals (NCs) embedded in amorphous oxide matrix is studied through molecular dynamics simulations with the chemical environment described by the reactive force field model. Our results indicate that the Si NC-oxide interface is more involved than the previously proposed schemes which were based on solely simple bridge or double bonds. We identify differen…
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The interface chemistry of silicon nanocrystals (NCs) embedded in amorphous oxide matrix is studied through molecular dynamics simulations with the chemical environment described by the reactive force field model. Our results indicate that the Si NC-oxide interface is more involved than the previously proposed schemes which were based on solely simple bridge or double bonds. We identify different types of three-coordinated oxygen complexes, previously not noted. The abundance and the charge distribution of each oxygen complex is determined as a function of the NC size as well as the transitions among them. The oxidation at the surface of NC induces tensile strain to Si-Si bonds which become significant only around the interface, while the inner core remains unstrained. Unlike many earlier reports on the interface structure, we do not observe any double bonds. Furthermore, our simulations and analysis reveal that the interface bond topology evolves among different oxygen bridges through these three-coordinated oxygen complexes.
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Submitted 15 April, 2008;
originally announced April 2008.
