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Impact of the Ce $4f$ states in the electronic structure of the intermediate-valence superconductor CeIr$_3$
Authors:
Shin-ichi Fujimori,
Ikuto Kawasaki,
Yukiharu Takeda,
Hiroshi Yamagami,
Norimasa Sasabe,
Yoshiki J. Sato,
Ai Nakamura,
Yusei Shimizu,
Arvind Maurya,
Yoshiya Homma,
Dexin Li,
Fuminori Honda,
Dai Aoki
Abstract:
The electronic structure of the $f$-based superconductor $\mathrm{CeIr_3}$ was studied by photoelectron spectroscopy. The energy distribution of the $\mathrm{Ce}~4f$ states were revealed by the $\mathrm{Ce}~3d-4f$ resonant photoelectron spectroscopy. The $\mathrm{Ce}~4f$ states were mostly distributed in the vicinity of the Fermi energy, suggesting the itinerant character of the $\mathrm{Ce}~4f$ s…
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The electronic structure of the $f$-based superconductor $\mathrm{CeIr_3}$ was studied by photoelectron spectroscopy. The energy distribution of the $\mathrm{Ce}~4f$ states were revealed by the $\mathrm{Ce}~3d-4f$ resonant photoelectron spectroscopy. The $\mathrm{Ce}~4f$ states were mostly distributed in the vicinity of the Fermi energy, suggesting the itinerant character of the $\mathrm{Ce}~4f$ states. The contribution of the $\mathrm{Ce}~4f$ states to the density of states (DOS) at the Fermi energy was estimated to be nearly half of that of the $\mathrm{Ir}~5d$ states, implying that the $\mathrm{Ce}~4f$ states have a considerable contribution to the DOS at the Fermi energy. The $\mathrm{Ce}~3d$ core-level and $\mathrm{Ce}~3d$ X-ray absorption spectra were analyzed based on a single-impurity Anderson model. The number of the $\mathrm{Ce}~4f$ states in the ground state was estimated to be $0.8-0.9$, which is much larger than the values obtained in the previous studies (i.e., $0-0.4$).
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Submitted 6 November, 2023;
originally announced November 2023.
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Impact of the ground-state $4f$ symmetry for anisotropic $cf$-hybridization in the heavy fermion superconductor CeNi$_{2}$Ge$_{2}$
Authors:
H. Fujiwara,
Y. Nakatani,
H. Aratani,
Y. Kanai-Nakata,
K. Yamagami,
S. Hamamoto,
T. Kiss,
A. Yamasaki,
A. Higashiya,
S. Imada,
A. Tanaka,
K. Tamasaku,
M. Yabashi,
T. Ishikawa,
A. Yasui,
H. Yamagami,
J. Miyawaki,
A. Miyake,
T. Ebihara,
Y. Saitoh,
A. Sekiyama
Abstract:
We report the ground-state symmetry of the Ce $4f$ states in the heavy fermion superconductor CeNi$_{2}$Ge$_{2}$, yielding anisotropic $cf$-hybridization between the Ce $4f$ states and conducting electrons. By analyzing linear dichroism in soft x-ray absorption and core-level hard x-ray photoemission spectra, the $4f$ symmetry is determined as $Σ$-type $Γ_{7}$, promoting predominant hybridization…
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We report the ground-state symmetry of the Ce $4f$ states in the heavy fermion superconductor CeNi$_{2}$Ge$_{2}$, yielding anisotropic $cf$-hybridization between the Ce $4f$ states and conducting electrons. By analyzing linear dichroism in soft x-ray absorption and core-level hard x-ray photoemission spectra, the $4f$ symmetry is determined as $Σ$-type $Γ_{7}$, promoting predominant hybridization with the conducting electrons originating from the Ge site. The band structures probed by the soft x-ray angle-resolved photoemission indicates that the Ge $4p$ components contribute to the band renormalization through the anisotropic hybridization effects, suggesting that the control of the electronic structures of Ge orbital gives an impact to achieve the exotic phenomena in CeNi$_{2}$Ge$_{2}$.
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Submitted 1 August, 2023;
originally announced August 2023.
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Electronic Structure of ThPd$_2$Al$_3$: an impact of the U $5f$ states in the electronic structure of UPd$_2$Al$_3$
Authors:
Shin-ichi Fujimori,
Yukiharu Takeda,
Hiroshi Yamagami,
Jiří Pospíšil,
Etsuji Yamamoto,
Yoshinori Haga
Abstract:
The electronic structure of ThPd$_2$Al$_3$, which is isostructural to the heavy fermion superconductor UPd$_2$Al$_3$, was investigated by photoelectron spectroscopy. The band structure and Fermi surfaces of ThPd$_2$Al$_3$ were obtained by angle-resolved photoelectron spectroscopy (ARPES), and the results were well-explained by the band-structure calculation based on the local density approximation…
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The electronic structure of ThPd$_2$Al$_3$, which is isostructural to the heavy fermion superconductor UPd$_2$Al$_3$, was investigated by photoelectron spectroscopy. The band structure and Fermi surfaces of ThPd$_2$Al$_3$ were obtained by angle-resolved photoelectron spectroscopy (ARPES), and the results were well-explained by the band-structure calculation based on the local density approximation. The comparison between the ARPES spectra and the band-structure calculation suggests that the Fermi surface of ThPd$_2$Al$_3$ mainly consists of the Al $3p$ and Th $6d$ states with a minor contribution from the Pd $4d$ states. The comparison of the band structures between ThPd$_2$Al$_3$ and UPd$_2$Al$_3$ argues that the U $5f$ states form Fermi surfaces in UPd$_2$Al$_3$ through hybridization with the Al $3p$ state in the Al layer, suggesting that the Fermi surface of UPd$_2$Al$_3$ has a strong three-dimensional nature.
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Submitted 7 March, 2022;
originally announced March 2022.
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Electronic structure of URu$_2$Si$_2$ in paramagnetic phase: Three-dimensional angle resolved photoelectron spectroscopy study
Authors:
Shin-ichi Fujimori,
Yukiharu Takeda,
Hiroshi Yamagami,
Etsuji Yamamoto,
Yoshinori Haga
Abstract:
The three-dimensional (3D) electronic structure of the hidden order compound URu$_2$Si$_2$ in a paramagnetic phase was revealed using a 3D angle-resolved photoelectron spectroscopy where the electronic structure of the entire Brillouin zone is obtained by scanning both incident photon energy and detection angles of photoelectrons. The quasi-particle bands with enhanced contribution from the…
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The three-dimensional (3D) electronic structure of the hidden order compound URu$_2$Si$_2$ in a paramagnetic phase was revealed using a 3D angle-resolved photoelectron spectroscopy where the electronic structure of the entire Brillouin zone is obtained by scanning both incident photon energy and detection angles of photoelectrons. The quasi-particle bands with enhanced contribution from the $\mathrm{U}~5f$ state were observed near $E_\mathrm{F}$, formed by the hybridization with the $\mathrm{Ru}~4d$ states. The energy dispersion of the quasi-particle band is significantly depend on $k_z$, indicating that they inherently have a 3D nature. The band-structure calculation qualitatively explain the characteristic features of the band structure and Fermi surface although the electron correlation effect strongly renormalizes the quasi-particle bands. The 3D and strongly-correlated nature of the quasi-particle bands in URu$_2$Si$_2$ is an essential ingredient for modeling its hidden-order transition.
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Submitted 30 March, 2021;
originally announced March 2021.
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Core-Level Photoelectron Spectroscopy Study of UTe$_2$
Authors:
Shin-ichi Fujimori,
Ikuto Kawasaki,
Yukiharu Takeda,
Hiroshi Yamagami,
Ai Nakamura,
Yoshiya Homma,
Dai Aoki
Abstract:
The valence state of UTe$_2$ was studied by core-level photoelectron spectroscopy. The main peak position of the U $4f$ core-level spectrum of UTe$_2$ coincides with that of UB$_2$, which is an itinerant compound with a nearly $5f^3$ configuration. However, the main peak of UTe$_2$ is broader than that of UB$_2$, and satellite structures are observed in the higher binding energy side of the main p…
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The valence state of UTe$_2$ was studied by core-level photoelectron spectroscopy. The main peak position of the U $4f$ core-level spectrum of UTe$_2$ coincides with that of UB$_2$, which is an itinerant compound with a nearly $5f^3$ configuration. However, the main peak of UTe$_2$ is broader than that of UB$_2$, and satellite structures are observed in the higher binding energy side of the main peak, which are characteristics of mixed-valence uranium compounds. These results suggest that the U 5$f$ state in UTe$_2$ is in a mixed valence state with a dominant contribution from the itinerant $5f^3$ configuration.
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Submitted 7 December, 2020;
originally announced December 2020.
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Electronic Structure of UTe$_2$ Studied by Photoelectron Spectroscopy
Authors:
Shin-ichi Fujimori,
Ikuto Kawasaki,
Yukiharu Takeda,
Hiroshi Yamagami,
Ai Nakamura,
Yoshiya Homma,
Dai Aoki
Abstract:
The electronic structure of the unconventional superconductor UTe$_2$ was studied by resonant photoelectron spectroscopy (RPES) and angle-resolved photoelectron spectroscopy (ARPES) with soft X-ray synchrotron radiation. The partial $\mathrm{U}~5f$ density of states of UTe$_2$ were imaged by the $\mathrm{U}~4d$--$5f$ RPES and it was found that the $\mathrm{U}~5f$ state has an itinerant character,…
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The electronic structure of the unconventional superconductor UTe$_2$ was studied by resonant photoelectron spectroscopy (RPES) and angle-resolved photoelectron spectroscopy (ARPES) with soft X-ray synchrotron radiation. The partial $\mathrm{U}~5f$ density of states of UTe$_2$ were imaged by the $\mathrm{U}~4d$--$5f$ RPES and it was found that the $\mathrm{U}~5f$ state has an itinerant character, but there exists an incoherent peak due to the strong electron correlation effects. Furthermore, an anomalous admixture of the $\mathrm{U}~5f$ states into the $\mathrm{Te}~5p$ bands was observed at a higher binding energy, which cannot be explained by band structure calculations. On the other hand, the band structure of UTe$_2$ was obtained by ARPES and its overall band structure were mostly explained by band structure calculations. These results suggest that the $\mathrm{U}~5f$ states of UTe$_2$ have itinerant but strongly-correlated nature with enhanced hybridization with the $\mathrm{Te}~5p$ states.
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Submitted 11 September, 2019; v1 submitted 25 August, 2019;
originally announced August 2019.
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Magnetization process of the insulating ferromagnetic semiconductor (Al,Fe)Sb
Authors:
Shoya Sakamoto,
Le Duc Anh,
Pham Nam Hai,
Yukiharu Takeda,
Masaki Kobayashi,
Yuki K. Wakabayashi,
Yosuke Nonaka,
Keisuke Ikeda,
Zhendong Chi,
Yuxuan Wan,
Masahiro Suzuki,
Yuji Saitoh,
Hiroshi Yamagami,
Masaaki Tanaka,
Atsushi Fujimori
Abstract:
We have studied the magnetization process of the new insulating ferromagnetic semiconductor (Al,Fe)Sb by means of x-ray magnetic circular dichroism. For an optimally doped sample with 10% Fe, a magnetization was found to rapidly increase at low magnetic fields and to saturate at high magnetic fields at room temperature, well above the Curie temperature of 40 K. We attribute this behavior to the ex…
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We have studied the magnetization process of the new insulating ferromagnetic semiconductor (Al,Fe)Sb by means of x-ray magnetic circular dichroism. For an optimally doped sample with 10% Fe, a magnetization was found to rapidly increase at low magnetic fields and to saturate at high magnetic fields at room temperature, well above the Curie temperature of 40 K. We attribute this behavior to the existence of nanoscale Fe-rich ferromagnetic domains acting as superparamagnets. By fitting the magnetization curves using the Langevin function representing superparamagnetism plus the paramagnetic linear function, we estimated the average magnetic moment of the nanoscale ferromagnetic domain to be 300-400 $μ_{B}$, and the fraction of Fe atoms participating in the nano-scale ferromagnetism to be $\sim$50%. Such behavior was also reported for (In,Fe)As:Be and Ge:Fe, and seems to be a universal characteristic of the Fe-doped ferromagnetic semiconductors. Further Fe doping up to 14% led to the weakening of the ferromagnetism probably because antiferromagnetic superexchange interaction between nearest-neighbor Fe-Fe pairs becomes dominant.
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Submitted 11 February, 2019;
originally announced February 2019.
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Manifestation of electron correlation effect in $\mathrm{U}~5f$ states of uranium compounds revealed by $\mathrm{U}~4d-5f$ resonant photoemission spectroscopy
Authors:
Shin-ichi Fujimori,
Masaharu Kobata,
Yukiharu Takeda,
Tetsuo Okane,
Yuji Saitoh,
Atsushi Fujimori,
Hiroshi Yamagami,
Yoshinori Haga,
Etsuji Yamamoto,
Yoshichika Onuki
Abstract:
We have elucidated the nature of the electron correlation effect in uranium compounds by imaging the partial $\mathrm{U}~5f$ density of states (pDOS) of typical itinerant, localized, and heavy fermion uranium compounds by using the $\mathrm{U}~4d-5f$ resonant photoemission spectroscopy. Obtained $\mathrm{U}~5f$ pDOS exhibit a systematic trend depending on the physical properties of compounds. The…
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We have elucidated the nature of the electron correlation effect in uranium compounds by imaging the partial $\mathrm{U}~5f$ density of states (pDOS) of typical itinerant, localized, and heavy fermion uranium compounds by using the $\mathrm{U}~4d-5f$ resonant photoemission spectroscopy. Obtained $\mathrm{U}~5f$ pDOS exhibit a systematic trend depending on the physical properties of compounds. The coherent peak at the Fermi level can be described by the band-structure calculation, but an incoherent peak emerges on the higher binding energy side ($\lesssim 1~\mathrm{eV}$) in the \Uf pDOS of localized and heavy fermion compounds. As the $\mathrm{U}~5f$ state is more localized, the intensity of the incoherent peak is enhanced and its energy position is shifted to higher binding energy. These behaviors are consistent with the prediction of the Mott metal-insulator transition, suggesting that the Hubbard-$U$ type mechanism takes an essential role in the $5f$ electronic structure of actinide materials.
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Submitted 3 January, 2019;
originally announced January 2019.
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Electronic structure of the novel high-$T_{\rm C}$ ferromagnetic semiconductor (Ga,Fe)Sb: x-ray magnetic circular dichroism and resonance photoemission spectroscopy studies
Authors:
Shoya Sakamoto,
Nguyen Thanh Tu,
Yukiharu Takeda,
Shin-ichi Fujimori,
Pham Nam Hai,
Le Duc Anh,
Yuki K. Wakabayashi,
Goro Shibata,
Masafumi Horio,
Keisuke Ikeda,
Yuji Saitoh,
Hiroshi Yamagami,
Masaaki Tanaka,
Atsushi Fujimori
Abstract:
The electronic structure and the magnetism of the novel ferromagnetic semiconductor (Ga,Fe)Sb, whose Curie temperature $T_{\rm C}$ can exceed room temperature, were investigated by means of x-ray absorption spectroscopy (XAS), x-ray magnetic circular dichroism (XMCD), and resonance photoemission spectroscopy (RPES). The line-shape analyses of the XAS and XMCD spectra suggest that the ferromagnetis…
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The electronic structure and the magnetism of the novel ferromagnetic semiconductor (Ga,Fe)Sb, whose Curie temperature $T_{\rm C}$ can exceed room temperature, were investigated by means of x-ray absorption spectroscopy (XAS), x-ray magnetic circular dichroism (XMCD), and resonance photoemission spectroscopy (RPES). The line-shape analyses of the XAS and XMCD spectra suggest that the ferromagnetism is of intrinsic origin. The orbital magnetic moments deduced using XMCD sum rules were found to be large, indicating that there is a considerable amount of 3$d^{6}$ contribution to the ground state of Fe. From RPES, we observed a strong dispersive Auger peak and non-dispersive resonantly enhanced peaks in the valence-band spectra. The latter is a fingerprint of the correlated nature of Fe 3$d$ electrons, whereas the former indicates their itinerant nature. It was also found that the Fe 3$d$ states have finite contribution to the DOS at the Fermi energy. These states presumably consisting of majority-spin $p$-$d$ hybridized states or minority-spin $e$ states would be responsible for the ferromagnetic order in this material.
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Submitted 18 November, 2018;
originally announced November 2018.
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Local Magnetic States of the Weakly Ferromagnetic Iron-Based Superconductor Sr$_2$VFeAsO$_{3-δ}$ Studied by X-ray Magnetic Circular Dichroism
Authors:
Masafumi Horio,
Yukiharu Takeda,
Hiromasa Namiki,
Takao Katagiri,
Yuki K. Wakabayashi,
Shoya Sakamoto,
Yosuke Nonaka,
Goro Shibata,
Keisuke Ikeda,
Yuji Saitoh,
Hiroshi Yamagami,
Takao Sasagawa,
Atsushi Fujimori
Abstract:
We have performed x-ray magnetic circular dichroism (XMCD) measurements on the iron-based superconductor Sr$_2$VFeAsO$_{3-δ}$ to study the origin of weak ferromagnetism (WFM) reported for this compound. While Fe 3$d$ electrons show a magnetic response similar to the other iron pnictides, signals from V 3$d$ electrons remain finite at zero magnetic field and may be responsible for the WFM.
We have performed x-ray magnetic circular dichroism (XMCD) measurements on the iron-based superconductor Sr$_2$VFeAsO$_{3-δ}$ to study the origin of weak ferromagnetism (WFM) reported for this compound. While Fe 3$d$ electrons show a magnetic response similar to the other iron pnictides, signals from V 3$d$ electrons remain finite at zero magnetic field and may be responsible for the WFM.
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Submitted 5 September, 2018; v1 submitted 16 August, 2018;
originally announced August 2018.
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Systematic study of the electronic structure and the magnetic properties of a few-nm-thick epitaxial (Ni1-xCox)Fe2O4 (x = 0 - 1) layers grown on Al2O3(111)/Si(111) using soft X-ray magnetic circular dichroism: effects of cation distribution
Authors:
Yuki K. Wakabayashi,
Yosuke Nonaka,
Yukiharu Takeda,
Shoya Sakamoto,
Keisuke Ikeda,
Zhendong Chi,
Goro Shibata,
Arata Tanaka,
Yuji Saitoh,
Hiroshi Yamagami,
Masaaki Tanaka,
Atsushi Fujimori,
Ryosho Nakane
Abstract:
We study the electronic structure and the magnetic properties of epitaxial (Ni1-xCox)Fe2O4(111) layers (x = 0 - 1) with thicknesses d = 1.7 - 5.2 nm grown on Al2O3(111)/Si(111) structures, to achieve a high value of inversion parameter y, which is the inverse-to-normal spinel-structure ratio, and hence to obtain good magnetic properties even when the thickness is thin enough for electron tunneling…
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We study the electronic structure and the magnetic properties of epitaxial (Ni1-xCox)Fe2O4(111) layers (x = 0 - 1) with thicknesses d = 1.7 - 5.2 nm grown on Al2O3(111)/Si(111) structures, to achieve a high value of inversion parameter y, which is the inverse-to-normal spinel-structure ratio, and hence to obtain good magnetic properties even when the thickness is thin enough for electron tunneling as a spin filter. We revealed the crystallographic (octahedral Oh or tetrahedral Td) sites and the valences of the Fe, Co, and Ni cations using experimental soft X-ray absorption spectroscopy and X-ray magnetic circular dichroism spectra and configuration-interaction cluster-model calculation. In all the (Ni1-xCox)Fe2O4 layers with d = about 4 nm, all Ni cations occupy the Ni2+ (Oh) site, whereas Co cations occupy the three different Co2+ (Oh), Co2+ (Td), and Co3+ (Oh) sites with constant occupancies. According to these features, the occupancy of the Fe3+ (Oh) cations decreases and that of the Fe3+ (Td) cations increases with decreasing x. Consequently, we obtained a systematic increase of y with decreasing x and achieved the highest y value of 0.91 for the NiFe2O4 layer with d = 3.5 nm. From the d dependences of y and magnetization in the d range of 1.7 - 5.2 nm, a magnetically dead layer is present near the NiFe2O4/Al2O3 interface, but its influence on the magnetization was significantly suppressed compared with the case of CoFe2O4 layers reported previously [Y. K. Wakabayasi et al., Phys. Rev. B 96, 104410 (2017)], due to the high site selectivity of the Ni cations. Since our epitaxial NiFe2O4 layer with d = 3.5 nm has a high y values (0.91) and a reasonably large magnetization (180 emu/cc), it is expected to exhibit a strong spin filter effect, which can be used for efficient spin injection into Si.
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Submitted 8 August, 2018;
originally announced August 2018.
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Electronic structures of UX$_3$ (X=Al, Ga, and In) studied by photoelectron spectroscopy
Authors:
Shin-ichi Fujimori,
Masaaki Kobata,
Yukiharu Takeda,
Tetsuo Okane,
Yuji Saitoh,
Atsushi Fujimori,
Hiroshi Yamagami,
Yoshinori Haga,
Etsuji Yamamoto,
Yoshichika Ōnuki
Abstract:
The electronic structures of UX$_3$ (X=Al, Ga, and In) were studied by photoelectron spectroscopy to understand the relationship between their electronic structures and magnetic properties. The band structures and Fermi surfaces of UAl$_3$ and UGa$_3$ were revealed experimentally by angle-resolved photoelectron spectroscopy (ARPES), and they were compared with the result of band-structure calculat…
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The electronic structures of UX$_3$ (X=Al, Ga, and In) were studied by photoelectron spectroscopy to understand the relationship between their electronic structures and magnetic properties. The band structures and Fermi surfaces of UAl$_3$ and UGa$_3$ were revealed experimentally by angle-resolved photoelectron spectroscopy (ARPES), and they were compared with the result of band-structure calculations. The topologies of the Fermi surfaces and the band structures of UAl$_3$ and UGa$_3$ were explained reasonably well by the calculation, although bands near the Fermi level ($E_\mathrm{F}$) were renormalized owing to the finite electron correlation effect. The topologies of the Fermi surfaces of UAl$_3$ and UGa$_3$ are very similar to each other, except for some minor differences. Such minor differences in their Fermi surface or electron correlation effect might take an essential role in their different magnetic properties. No significant changes were observed between the ARPES spectra of UGa$_3$ in the paramagnetic and antiferromagnetic phases, suggesting that UGa$_3$ is an itinerant weak antiferromagnet. The effect of chemical pressure on the electronic structures of UX$_3$ compounds was also studied by utilizing the smaller lattice constants of UAl$_3$ and UGa$_3$ than that of UIn$_3$. The valence band spectrum of UIn$_3$ is accompanied by a satellite-like structure on the high-binding-energy side. The core-level spectrum of UIn$_3$ is also qualitatively different from those of UAl$_3$ and UGa$_3$. These findings suggest that the U~$5f$ states in UIn$_3$ are more localized than those in UAl$_3$ and UGa$_3$.
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Submitted 18 September, 2017;
originally announced September 2017.
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Electronic structure of ThRu2Si2 studied by angle-resolved photoelectron spectroscopy: Elucidating the contribution of U 5f states in URu2Si2
Authors:
Shin-ichi Fujimori,
Masaaki Kobata,
Yukiharu Takeda,
Tetsuo Okane,
Yuji Saitoh,
Atsushi Fujimori,
Hiroshi Yamagami,
Yuji Matsumoto,
Etsuji Yamamoto,
Naoto Tateiwa,
Yoshinori Haga
Abstract:
The electronic structure of ThRu2Si2 was studied by angle-resolved photoelectron spectroscopy (ARPES) with incident photon energies of hn=655-745 eV. Detailed band structure and the three-dimensional shapes of Fermi surfaces were derived experimentally, and their characteristic features were mostly explained by means of band structure calculations based on the density functional theory. Comparison…
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The electronic structure of ThRu2Si2 was studied by angle-resolved photoelectron spectroscopy (ARPES) with incident photon energies of hn=655-745 eV. Detailed band structure and the three-dimensional shapes of Fermi surfaces were derived experimentally, and their characteristic features were mostly explained by means of band structure calculations based on the density functional theory. Comparison of the experimental ARPES spectra of ThRu2Si2 with those of URu2Si2 shows that they have considerably different spectral profiles particularly in the energy range of 1 eV from the Fermi level, suggesting that U 5f states are substantially hybridized in these bands. The relationship between the ARPES spectra of URu2Si2 and ThRu2Si2 is very different from the one between the ARPES spectra of CeRu2Si2 and LaRu2Si2, where the intrinsic difference in their spectra is limited only in the very vicinity of the Fermi energy. The present result suggests that the U 5f electrons in URu2Si2 have strong hybridization with ligand states and have an essentially itinerant character.
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Submitted 29 August, 2017; v1 submitted 27 August, 2017;
originally announced August 2017.
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Electronic structure and magnetic properties of magnetically dead layers in epitaxial CoFe2O4/Al2O3/Si(111) films studied by X-ray magnetic circular dichroism
Authors:
Yuki K. Wakabayashi,
Yosuke Nonaka,
Yukiharu Takeda,
Shoya Sakamoto,
Keisuke Ikeda,
Zhendong Chi,
Goro Shibata,
Arata Tanaka,
Yuji Saitoh,
Hiroshi Yamagami,
Masaaki Tanaka,
Atsushi Fujimori,
Ryosho Nakane
Abstract:
Epitaxial CoFe2O4/Al2O3 bilayers are expected to be highly efficient spin injectors into Si owing to the spin filter effect of CoFe2O4. To exploit the full potential of this system, understanding the microscopic origin of magnetically dead layers at the CoFe2O4/Al2O3 interface is necessary. In this paper, we study the crystallographic and electronic structures and the magnetic properties of CoFe2O…
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Epitaxial CoFe2O4/Al2O3 bilayers are expected to be highly efficient spin injectors into Si owing to the spin filter effect of CoFe2O4. To exploit the full potential of this system, understanding the microscopic origin of magnetically dead layers at the CoFe2O4/Al2O3 interface is necessary. In this paper, we study the crystallographic and electronic structures and the magnetic properties of CoFe2O4(111) layers with various thicknesses (thickness d = 1.4, 2.3, 4, and 11 nm) in the epitaxial CoFe2O4(111)/Al2O3(111)/Si(111) structures using soft X-ray absorption spectroscopy (XAS) and X-ray magnetic circular dichroism (XMCD) combined with cluster-model calculation. The magnetization of CoFe2O4 measured by XMCD gradually decreases with decreasing thickness d and finally a magnetically dead layer is clearly detected at d = 1.4 nm. The magnetically dead layer has frustration of magnetic interactions which is revealed from comparison between the magnetizations at 300 and 6 K. From analysis using configuration-interaction cluster-model calculation, the decrease of d leads to a decrease in the inverse-to-normal spinel structure ratio and also a decrease in the average valence of Fe at the octahedral sites. These results strongly indicate that the magnetically dead layer at the CoFe2O4/Al2O3 interface originates from various complex networks of superexchange interactions through the change in the crystallographic and electronic structures. Furthermore, from comparison of the magnetic properties between d = 1.4 and 2.3 nm, it is found that ferrimagnetic order of the magnetically dead layer at d = 1.4 nm is restored by the additional growth of the 0.9-nm-thick CoFe2O4 layer on it.
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Submitted 6 April, 2017;
originally announced April 2017.
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Correlation effect in Sr$_{1-x}$La$_x$RuO$_3$ studied by soft x-ray photoemission spectroscopy
Authors:
Ikuto Kawasaki,
Yumi Sakon,
Shin-ichi Fujimori,
Hiroshi Yamagami,
Kenichi Tenya,
Makoto Yokoyama
Abstract:
To clarify how the electronic state of Sr1-xLaxRuO3 evolves with La doping, we conducted photoemission (PES) experiments using soft x-rays. The spectral shape of the Ru 4d derived peak near the Fermi level changes significantly with increasing x. This variation indicates that a spectral weight transfer from the coherent to incoherent component occurs due to an enhancement of the electron correlati…
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To clarify how the electronic state of Sr1-xLaxRuO3 evolves with La doping, we conducted photoemission (PES) experiments using soft x-rays. The spectral shape of the Ru 4d derived peak near the Fermi level changes significantly with increasing x. This variation indicates that a spectral weight transfer from the coherent to incoherent component occurs due to an enhancement of the electron correlation effect. Resonant PES experiments at the La 3d_{5/2} edge have confirmed that there is no significant contribution of the La 5d state in the energy range where the spectral weight transfer is observed. Using the dependence of the photoelectron mean free path on the photon energy, we subtracted the surface components from the PES spectra and confirmed that the enhancement of the electron correlation effect with La doping is an intrinsic bulk phenomenon. On the other hand, a large portion of the coherent component remains at the Fermi level up to x = 0.5, reflecting that the Ru 4d state still has itinerant characteristics. Moreover, we found that the PES spectra hardly depend on the temperature and do not exhibit a discernible change with magnetic ordering, suggesting that the temperature variation of the exchange splitting does not follow the prediction of the Stoner theory. The presently obtained experimental results indicate that the electron correlation effect plays an important role in Sr1-xLaxRuO3 and that the Ru 4d electrons possess both local and itinerant characteristics.
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Submitted 15 November, 2016;
originally announced November 2016.
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Electronic Structures of Ferromagnetic CeAgSb$_2$:Soft X-ray Absorption, Magnetic Circular Dichroism and Angle-Resolved Photoemission Spectroscopies
Authors:
Yuji Saitoh,
Hidenori Fujiwara,
Takashi Yamaguchi,
Yasuhiro Nakatani,
Takeo Mori,
Hiroto Fuchimoto,
Takayuki Kiss,
Akira Yasui,
Jun Miyawaki,
Shin Imada,
Hiroshi Yamagami,
Takao Ebihara,
Akira Sekiyama
Abstract:
We report a combined study for the electronic structures of ferromagnetic CeAgSb$_2$ using soft X-ray absorption (XAS), magnetic circular dichroism (XMCD), and angle-resolved photoemission (ARPES) spectroscopies. The Ce $M_{4, 5}$ XAS spectra show very small satellite structures, reflecting a strongly localized character of the Ce $4f$ electrons. The linear dichroism effects in the Ce $M_{4, 5}$ X…
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We report a combined study for the electronic structures of ferromagnetic CeAgSb$_2$ using soft X-ray absorption (XAS), magnetic circular dichroism (XMCD), and angle-resolved photoemission (ARPES) spectroscopies. The Ce $M_{4, 5}$ XAS spectra show very small satellite structures, reflecting a strongly localized character of the Ce $4f$ electrons. The linear dichroism effects in the Ce $M_{4, 5}$ XAS spectra demonstrate the ground state Ce $4f$ symmetry of $Γ{_6}$, the spatial distribution of which is directed along the $c$-axis. The XMCD results give support to the picture of local-moment magnetism in CeAgSb$_2$. Moreover it is also found that the theoretical band dispersions for LaAgSb$_2$ provides better description of the ARPES band structures than those for CeAgSb$_2$. Nevertheless, ARPES spectra at the Ce $3d$-$4f$ resonance show the momentum dependence for the intensity ratio between Ce $4f^{1}_{5/2}$ and $4f^{1}_{7/2}$ peaks in a part of the Brillouin zone, suggesting the non-negligible momentum dependent hybridization effect between the Ce $4f$ and the conduction electrons. This is associated with the moderate mass enhancement in CeAgSb$_2$.
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Submitted 8 September, 2016;
originally announced September 2016.
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Origin of the large positive magnetoresistance in Ge1-xMnx granular thin films
Authors:
Yuki K. Wakabayashi,
Ryota Akiyama,
Yukiharu Takeda,
Masafumi Horio,
Goro Shibata,
Shoya Sakamoto,
Yoshisuke Ban,
Yuji Saitoh,
Hiroshi Yamagami,
Atsushi Fujimori,
Masaaki Tanaka,
Shinobu Ohya
Abstract:
GeMn granular thin films are a unique and promising material for spintronics applications due to large positive magnetoresistance (MR). Previous studies on GeMn have suggested that the large MR is related to nanospinodal decomposition of GeMn into Mn-rich ferromagnetic nanoparticles and Mn-poor paramagnetic matrix. However, its microscopic origin of the MR has not been clarified yet. Here, using X…
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GeMn granular thin films are a unique and promising material for spintronics applications due to large positive magnetoresistance (MR). Previous studies on GeMn have suggested that the large MR is related to nanospinodal decomposition of GeMn into Mn-rich ferromagnetic nanoparticles and Mn-poor paramagnetic matrix. However, its microscopic origin of the MR has not been clarified yet. Here, using X-ray magnetic circular dichroism (XMCD), which is extremely sensitive to the local magnetic state of each atom, we investigate the magnetic properties of the nanoparticles and the matrix in GeMn separately. We find that the MR ratio is proportional to the product of the magnetizations originating from the nanoparticles and the matrix. This result indicates that spin-polarized holes in the nanoparticles penetrate into the matrix and that these holes undergo spin-disorder magnetic scattering by the paramagnetic Mn atoms in the matrix, which induces the large MR.
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Submitted 14 June, 2016;
originally announced June 2016.
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Electronic Structure of the Ferromagnetic Semiconductor Fe-doped Ge Revealed by Soft X-ray Angle-Resolved Photoemission Spectroscopy
Authors:
Shoya Sakamoto,
Yuki K. Wakabayashi,
Yukiharu Takeda,
Shin-ichi Fujimori,
Hakuto Suzuki,
Yoshisuke Ban,
Hiroshi Yamagami,
Masaaki Tanaka,
Shinobu Ohya,
Atsushi Fujimori
Abstract:
Ge$_{1-x}$Fe$_{x}$ (Ge:Fe) shows ferromagnetic behavior up to a relatively high temperature of 210 K, and hence is a promising material for spintronic applications compatible with Si technology. We have studied its electronic structure by soft x-ray angle-resolved photoemission spectroscopy (SX-ARPES) measurements in order to elucidate the mechanism of the ferromagnetism. We observed finite Fe 3…
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Ge$_{1-x}$Fe$_{x}$ (Ge:Fe) shows ferromagnetic behavior up to a relatively high temperature of 210 K, and hence is a promising material for spintronic applications compatible with Si technology. We have studied its electronic structure by soft x-ray angle-resolved photoemission spectroscopy (SX-ARPES) measurements in order to elucidate the mechanism of the ferromagnetism. We observed finite Fe 3$d$ components in the states at the Fermi level ($E_{F}$) in a wide region in momentum space and $E_{F}$ was located above the valence-band maximum (VBM). First-principles supercell calculation also suggested that the $E_{F}$ is located above the VBM, within the narrow spin-down $d$($e$) band and within the spin-up impurity band of the deep acceptor-level origin derived from the strong $p$-$d$($t_{2}$) hybridization. We conclude that the narrow $d$($e$) band is responsible for the ferromagnetic coupling between Fe atoms while the acceptor-level-originated band is responsible for the transport properties of Ge:Fe.
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Submitted 17 May, 2016;
originally announced May 2016.
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Thermoelectric power quantum oscillations in the ferromagnet UGe$_2$
Authors:
A. Palacio Morales,
A. Pourret,
G. Knebel,
G. Bastien,
V. Taufour,
D. Aoki,
H. Yamagami,
J. Flouquet
Abstract:
We present thermoelectric power and resistivity measurements in the ferromagnet UGe$_2$ as a function of temperature and magnetic field. At low temperature, huge quantum oscillations are observed in the thermoelectric power as a function of the magnetic field applied along the $a$ axis. The frequencies of the extreme orbits are determined and an analysis of the cyclotron masses is performed follow…
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We present thermoelectric power and resistivity measurements in the ferromagnet UGe$_2$ as a function of temperature and magnetic field. At low temperature, huge quantum oscillations are observed in the thermoelectric power as a function of the magnetic field applied along the $a$ axis. The frequencies of the extreme orbits are determined and an analysis of the cyclotron masses is performed following different theoretical approaches for quantum oscillations detected in the thermoelectric power. They are compared to those obtained by Shubnikov-de Haas experiments on the same crystal and previous de Haas-van Alphen experiments. The agreement of the different probes confirms thermoelectric power as an excellent probe to extract simultaneously both microscopic and macroscopic information on the Fermi-surface properties. Band-structure calculations of UGe$_2$ in the ferromagnetic state are compared to the experiment.
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Submitted 23 March, 2016;
originally announced March 2016.
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Thickness-dependent magnetic properties and strain-induced orbital magnetic moment in SrRuO3 thin films
Authors:
K. Ishigami,
K. Yoshimatsu,
D. Toyota,
M. Takizawa,
T. Yoshida,
G. Shibata,
T. Harano,
Y. Takahashi,
T. Kadono,
V. K. Verma,
V. R. Singh,
Y. Takeda,
T. Okane,
Y. Saitoh,
H. Yamagami,
T. Koide,
M. Oshima,
H. Kumigashira,
A. Fujimori
Abstract:
Thin films of the ferromagnetic metal SrRuO3 (SRO) show a varying easy magnetization axis depending on the epitaxial strain and undergo a metal-to-insulator transition with decreasing film thickness. We have investigated the magnetic properties of SRO thin films with varying thicknesses fabricated on SrTiO3(001) substrates by soft x-ray magnetic circular dichroism (XMCD) at the Ru M2,3 edge. Resul…
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Thin films of the ferromagnetic metal SrRuO3 (SRO) show a varying easy magnetization axis depending on the epitaxial strain and undergo a metal-to-insulator transition with decreasing film thickness. We have investigated the magnetic properties of SRO thin films with varying thicknesses fabricated on SrTiO3(001) substrates by soft x-ray magnetic circular dichroism (XMCD) at the Ru M2,3 edge. Results have shown that, with decreasing film thickness, the film changes from ferromagnetic to non-magnetic around 3monolayer thickness, consistent with previous magnetization and magneto-optical Kerr effect measurements. The orbital magnetic moment perpendicular to the film was found to be ~ 0.1μB/Ru atom, and remained nearly unchanged with decreasing film thickness while the spin magnetic moment decreases. Mechanism for the formation of the orbital magnetic moment is discussed based on the electronic structure of the compressively strained SRO film.
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Submitted 4 July, 2015; v1 submitted 21 May, 2015;
originally announced May 2015.
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Electronic structures of ferromagnetic superconductors $\mathrm{UGe}_2$ and $\mathrm{UCoGe}$ studied by angle-resolved photoelectron spectroscopy
Authors:
Shin-ichi Fujimori,
Takuo Ohkochi,
Ikuto Kawasaki,
Akira Yasui,
Yukiharu Takeda,
Tetsuo Okane,
Yuji Saitoh,
Atsushi Fujimori,
Hiroshi Yamagami,
Yoshinori Haga,
Etsuji Yamamoto,
Yoshichika Onuki
Abstract:
The electronic structures of the ferromagnetic superconductors $\mathrm{UGe}_2$ and $\mathrm{UCoGe}$ in the paramagnetic phase were studied by angle-resolved photoelectron spectroscopy using soft X-rays ($hν=400-500$). The quasi-particle bands with large contributions from $\mathrm{U}~5f$ states were observed in the vicinity of $E_\mathrm{F}$, suggesting that the $\mathrm{U}~5f$ electrons of these…
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The electronic structures of the ferromagnetic superconductors $\mathrm{UGe}_2$ and $\mathrm{UCoGe}$ in the paramagnetic phase were studied by angle-resolved photoelectron spectroscopy using soft X-rays ($hν=400-500$). The quasi-particle bands with large contributions from $\mathrm{U}~5f$ states were observed in the vicinity of $E_\mathrm{F}$, suggesting that the $\mathrm{U}~5f$ electrons of these compounds have an itinerant character. Their overall band structures were explained by the band-structure calculations treating all the $\mathrm{U}~5f$ electrons as being itinerant. Meanwhile, the states in the vicinity of $E_\mathrm{F}$ show considerable deviations from the results of band-structure calculations, suggesting that the shapes of Fermi surface of these compounds are qualitatively different from the calculations, possibly caused by electron correlation effect in the complicated band structures of the low-symmetry crystals. Strong hybridization between $\mathrm{U}~5f$ and $\mathrm{Co}~3d$ states in $\mathrm{UCoGe}$ were found by the $\mathrm{Co}~2p-3d$ resonant photoemission experiment, suggesting that $\mathrm{Co}~3d$ states have finite contributions to the magnetic, transport, and superconducting properties.
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Submitted 7 May, 2015;
originally announced May 2015.
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Gradual localization of 5f states in orthorhombic UTX ferromagnets - polarized neutron diffraction study of Ru substituted UCoGe
Authors:
Michal Valiska,
Jiri Pospisil,
Anne Stunault,
Yukiharu Takeda,
Beatrice Gillon,
Yoshinori Haga,
Karel Prokes,
Mohsen M. Abd-Elmeguid,
Gwilherm Nenert,
Tetsuo Okane,
Hiroshi Yamagami,
Laurent Chapon,
Arsene Gukasov,
Alain Cousson,
Etsuji Yamamoto,
Vladimir Sechovsky
Abstract:
We report on a microscopic study of the evolution of ferromagnetism in the Ru substituted ferromagnetic superconductor (FM SC) UCoGe crystallizing in the orthorhombic TiNiSi-type structure. For that purpose, two single crystals with composition UCo0.97Ru0.03Ge and UCo0.88Ru0.12Ge have been prepared and characterized by magnetization, AC susceptibility, specific heat and electrical resistivity meas…
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We report on a microscopic study of the evolution of ferromagnetism in the Ru substituted ferromagnetic superconductor (FM SC) UCoGe crystallizing in the orthorhombic TiNiSi-type structure. For that purpose, two single crystals with composition UCo0.97Ru0.03Ge and UCo0.88Ru0.12Ge have been prepared and characterized by magnetization, AC susceptibility, specific heat and electrical resistivity measurements. Both compounds have been found to order ferromagnetically below TC = 6.5 K and 7.5 K, respectively, which is considerably higher than the TC = 3 K of the parent compound UCoGe. The higher values of TC are accompanied by enhanced values of the spontaneous moment mspont. = 0.11 mB/f.u. and mspont. = 0.21 mB/f.u., respectively in comparison to the tiny spontaneous moment of UCoGe (about 0.07mB/f.u.). No sign of superconductivity was detected in either compound. The magnetic moments of the samples were investigated on the microscopic scale using polarized neutron diffraction (PND) and for UCo0.88Ru0.12Ge also by soft X-ray magnetic circular dichroism (XMCD). The analysis of the PND results indicates that the observed enhancement of ferromagnetism is mainly due to the growth of the orbital part of the uranium 5f moment mL(U), reflecting a gradual localization of the 5f electrons with Ru substitution. In addition, the parallel orientation of the U and Co moments has been established in both substituted compounds. The results are discussed and compared with related isostructural ferromagnetic UTX compounds (T - transition metals, X - Si, Ge) in the context of a varying degree of the 5f-ligand hybridization.
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Submitted 21 April, 2015;
originally announced April 2015.
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Room temperature local ferromagnetism and nanoscale domain growth in the ferromagnetic semiconductor GeFe
Authors:
Yuki K. Wakabayashi,
Shoya Sakamoto,
Yukiharu Takeda,
Keisuke Ishigami,
Yukio Takahashi,
Yuji Saitoh,
Hiroshi Yamagami,
Atsushi Fujimori,
Masaaki Tanaka,
Shinobu Ohya
Abstract:
We investigate the local electronic structure and magnetic properties of the group IV based ferromagnetic semiconductor, GeFe, using soft X ray magnetic circular dichroism. Our results show that the doped Fe 3d electrons are strongly hybridized with the Ge 4p states, and have an unusually large orbital magnetic moment relative to the spin magnetic moment; i.e., morb/mspin = 0.3. We find that local…
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We investigate the local electronic structure and magnetic properties of the group IV based ferromagnetic semiconductor, GeFe, using soft X ray magnetic circular dichroism. Our results show that the doped Fe 3d electrons are strongly hybridized with the Ge 4p states, and have an unusually large orbital magnetic moment relative to the spin magnetic moment; i.e., morb/mspin = 0.3. We find that local ferromagnetic domains, which are formed through ferromagnetic exchange interactions in the high Fe content regions of the GeFe films, exist at room temperature, well above the Curie temperature. We demonstrate the first observation of the intriguing nanoscale domain growth process in which ferromagnetic domains expand as the temperature decreases, followed by a transition of the entire film into a ferromagnetic state at the Curie temperature.
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Submitted 31 January, 2015;
originally announced February 2015.
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Polarized neutron diffraction and X-ray magnetic circular dichroism study of Ru doped UCoGe
Authors:
Michal Valiska,
Jiri Pospisil,
Anne Stunault,
Yukiharu Takeda,
Beatrice Gillon,
Yoshinori Haga,
Karel Prokes,
Gwilherm Nenert,
Tetsuo Okane,
Hiroshi Yamagami,
Laurent Chapon,
Arsene Goukassov,
Allain Cousson,
Etsuji Yamamoto,
Vladimir Sechovsky
Abstract:
We report on microscopic study of the ferromagnetism enhancement in the Ru doped ferromagnetic superconductor (FM SC) UCoGe. For that purpose, two single crystals with composition UCo0.97Ru0.03Ge and UCo0.88Ru0.12Ge were prepared. Both single crystals were investigated by polarized neutron diffraction (PND) at low temperatures in magnetic fields and the latter one also by the soft X-ray magnetic c…
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We report on microscopic study of the ferromagnetism enhancement in the Ru doped ferromagnetic superconductor (FM SC) UCoGe. For that purpose, two single crystals with composition UCo0.97Ru0.03Ge and UCo0.88Ru0.12Ge were prepared. Both single crystals were investigated by polarized neutron diffraction (PND) at low temperatures in magnetic fields and the latter one also by the soft X-ray magnetic circular dichroism (XMCD) method. UCo0.96Ru0.03Ge and UCo0.88Ru0.12Ge have been found ordering ferromagnetically below the Curie temperature TC = 6 K and 8.5 K, respectively, which are considerable higher than TC = 3 K of UCoGe. The increase of TC is accompanied by enhancement of the spontaneous moment to ms = 0.11 mB/f.u. and ms = 0.21 mB/f.u., respectively. The analysis of the PND results assigns the ferromagnetism enhancement mainly to the growth of the orbital part of uranium 5 f moment. In contrast to the published results of PND study of the parent UCoGe, we have found parallel orientation of the U and Co moments in both doped compounds. Evolution of magnetic characteristics with Ru concentration is discussed within a scenario considering the varying 5 f-ligand hybridization as the key mechanism.
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Submitted 22 April, 2015; v1 submitted 22 December, 2014;
originally announced December 2014.
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Spin and orbital magnetic moments of Fe in the $n$-type ferromagnetic semiconductor (In,Fe)As
Authors:
M. Kobayashi,
L. D. Anh,
P. N. Hai,
Y. Takeda,
S. Sakamoto,
T. Kadono,
T. Okane,
Y. Saitoh,
H. Yamagami,
Y. Harada,
M. Oshima,
M. Tanaka,
A. Fujimori
Abstract:
The electronic and magnetic properties of Fe atoms in the ferromagnetic semiconductor (In,Fe)As codoped with Be have been studied by x-ray absorption spectroscopy (XAS) and x-ray magnetic circular dichroism (XMCD) at the Fe $L_{2,3}$ edge. The XAS and XMCD spectra showed simple spectral line shapes similar to Fe metal, but the ratio of the orbital and spin magnetic moments ($M_\mathrm{orb}$/…
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The electronic and magnetic properties of Fe atoms in the ferromagnetic semiconductor (In,Fe)As codoped with Be have been studied by x-ray absorption spectroscopy (XAS) and x-ray magnetic circular dichroism (XMCD) at the Fe $L_{2,3}$ edge. The XAS and XMCD spectra showed simple spectral line shapes similar to Fe metal, but the ratio of the orbital and spin magnetic moments ($M_\mathrm{orb}$/$M_\mathrm{spin}$) estimated using the XMCD sum rules was significantly larger than that of Fe metal, indicating a significant orbital moment of Fe $3d$ electrons in (In,Fe)As:Be. The positive value of $M_\mathrm{orb}$/$M_\mathrm{spin}$ implies that the Fe $3d$ shell is more than half-filled, which arises from the hybridization of the Fe$^{3+}$ ($d^5$) state with the charge-transfer $d^6\underline{L}$ states, where $\underline{L}$ is a ligand hole in the host valence band. The XMCD intensity as a function of magnetic field indicated hysteretic behavior of the superparamagnetic-like component due to discrete ferromagnetic domains.
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Submitted 20 May, 2014;
originally announced May 2014.
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Itinerant magnetism in URhGe revealed by angle resolved photoelectron spectroscopy
Authors:
Shin-ichi Fujimori,
Ikuto Kawasaki,
Akira Yasui,
Yukiharu Takeda,
Tetsuo Okane,
Yuji Saitoh,
Atsushi Fujimori,
Hiroshi Yamagami,
Yoshinori Haga,
Etsuji Yamamoto,
Yoshichika Onuki
Abstract:
The electronic structure of the ferromagnetic superconductor URhGe in the paramagnetic phase has been studied by angle-resolved photoelectron spectroscopy using soft x rays (hn=595-700 eV). Dispersive bands with large contributions from U 5f states were observed in the ARPES spectra, and form Fermi surfaces. The band structure in the paramagnetic phase is partly explained by the band-structure cal…
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The electronic structure of the ferromagnetic superconductor URhGe in the paramagnetic phase has been studied by angle-resolved photoelectron spectroscopy using soft x rays (hn=595-700 eV). Dispersive bands with large contributions from U 5f states were observed in the ARPES spectra, and form Fermi surfaces. The band structure in the paramagnetic phase is partly explained by the band-structure calculation treating all U 5f electrons as being itinerant, suggesting that an itinerant description of U 5f states is a good starting point for this compound. On the other hand, there are qualitative disagreements especially in the band structure near the Fermi level (E_B < 0.5 eV). The experimentally observed bands are less dispersive than the calculation, and the shape of the Fermi surface is different from the calculation. The changes in spectral functions due to the ferromagnetic transition were observed in bands near the Fermi level, suggesting that the ferromagnetism in this compound has an itinerant origin.
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Submitted 2 April, 2014;
originally announced April 2014.
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Thickness-dependent ferromagnetic metal to paramagnetic insulator transition in La$_{0.6}$Sr$_{0.4}$MnO$_3$ thin films studied by x-ray magnetic circular dichroism
Authors:
Goro Shibata,
Kohei Yoshimatsu,
Enju Sakai,
Vijay Raj Singh,
Virendra Kumar Verma,
Keisuke Ishigami,
Takayuki Harano,
Toshiharu Kadono,
Yukiharu Takeda,
Tetsuo Okane,
Yuji Saitoh,
Hiroshi Yamagami,
Akihito Sawa,
Hiroshi Kumigashira,
Masaharu Oshima,
Tsuneharu Koide,
Atsushi Fujimori
Abstract:
Metallic transition-metal oxides undergo a metal-to-insulator transition (MIT) as the film thickness decreases across a ritical thickness of several monolayers (MLs), but its driving mechanism remains controversial. We have studied the thickness-dependent MIT of the ferromagnetic metal La$_{0.6}$Sr$_{0.4}$MnO$_3$ by x-ray absorption spectroscopy and x-ray magnetic circular dichroism. As the film t…
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Metallic transition-metal oxides undergo a metal-to-insulator transition (MIT) as the film thickness decreases across a ritical thickness of several monolayers (MLs), but its driving mechanism remains controversial. We have studied the thickness-dependent MIT of the ferromagnetic metal La$_{0.6}$Sr$_{0.4}$MnO$_3$ by x-ray absorption spectroscopy and x-ray magnetic circular dichroism. As the film thickness was decreased across the critical thickness of the MIT (6-8 ML), a gradual decrease of the ferromagnetic signals and a concomitant increase of paramagnetic signals were observed, while the Mn valence abruptly decreased towards Mn$^{3+}$. These observations suggest that the ferromagnetic phase gradually and most likely inhomogeneously turns into the paramagnetic phase and both phases abruptly become insulating at the critical thickness.
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Submitted 24 June, 2014; v1 submitted 3 November, 2013;
originally announced November 2013.
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Orbital magnetic moment and coercivity of SiO$_{2}$-coated FePt nanoparticles studied by x-ray magnetic circular dichroism
Authors:
Y. Takahashi,
T. Kadono,
V. R. Singh,
V. K. Verma,
K. Ishigami,
G. Shibata,
T. Harano,
A. Fujimori,
Y. Takeda,
T. Okane,
Y. Saitoh,
H. Yamagami,
S. Yamamoto,
M. Takano
Abstract:
We have investigated the spin and orbital magnetic moments of Fe in FePt nanoparticles in the $L$1$_{0}$-ordered phase coated with SiO$_{2}$ by x-ray absorption spectroscopy (XAS) and x-ray magnetic circular dichroism (XMCD) measurements at the Fe $L_{\rm 2,3}$ absorption edges. Using XMCD sum rules, we evaluated the ratio of the orbital magnetic moment ($M_{\rm orb}$) to the spin magnetic moment…
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We have investigated the spin and orbital magnetic moments of Fe in FePt nanoparticles in the $L$1$_{0}$-ordered phase coated with SiO$_{2}$ by x-ray absorption spectroscopy (XAS) and x-ray magnetic circular dichroism (XMCD) measurements at the Fe $L_{\rm 2,3}$ absorption edges. Using XMCD sum rules, we evaluated the ratio of the orbital magnetic moment ($M_{\rm orb}$) to the spin magnetic moment ($M_{\rm spin}$) of Fe to be $M_{\rm orb}/M_{\rm spin}$ = 0.08. This $M_{\rm orb}/M_{\rm spin}$ value is comparable to the value (0.09) obtained for FePt nanoparticles prepared by gas phase condensation, and is larger than the values ($\sim$0.05) obtained for FePt thin films, indicating a high degree of $L$1$_{0}$ order. The hysteretic behavior of the FePt component of the magnetization was measured by XMCD. The magnetic coercivity ($H_{\rm c}$) was found to be as large as 1.8 T at room temperature, $\sim$3 times larger than the thin film value and $\sim$50 times larger than that of the gas phase condensed nanoparticles. The hysteresis curve is well explained by the Stoner-Wohlfarth model for non-interacting single-domain nanoparticles with the $H_{\rm c}$ distributed from 1 T to 5 T.
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Submitted 30 October, 2013;
originally announced October 2013.
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Role of doped Ru in coercivity-enhanced La$_{0.6}$Sr$_{0.4}MnO$_3$ thin film studied by x-ray magnetic circular dichroism
Authors:
T. Harano,
G. Shibata,
K. Ishigami,
Y. Takashashi,
V. K. Verma,
V. R. Singh,
T. Kadono,
A. Fujimori,
Y. Takeda,
T. Okane,
Y. Saitoh,
H. Yamagami,
T. Koide,
H. Yamada,
A. Sawa,
M. Kawasaki,
Y. Tokura,
A. Tanaka
Abstract:
The coercivity of La$_{1-x}$Sr$_x$MnO$_3$ thin films can be enhanced by Ru substitution for Mn. In order to elucidate its mechanism, we performed soft x-ray absorption and magnetic circular dichroism measurements at the Ru M$_{2,3}$ and Mn L$_{2,3}$ edges. We found that the spin direction of Ru and Mn are opposite and that Ru has a finite orbital magnetic moment. Cluster-model analysis indicated t…
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The coercivity of La$_{1-x}$Sr$_x$MnO$_3$ thin films can be enhanced by Ru substitution for Mn. In order to elucidate its mechanism, we performed soft x-ray absorption and magnetic circular dichroism measurements at the Ru M$_{2,3}$ and Mn L$_{2,3}$ edges. We found that the spin direction of Ru and Mn are opposite and that Ru has a finite orbital magnetic moment. Cluster-model analysis indicated that the finite orbital magnetic moment as well as the reduced spin moment of Ru result from local lattice distortion caused by epitaxial strain from the SrTiO$_3$ substrate in the presence of spin-orbit interaction.
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Submitted 10 September, 2013;
originally announced September 2013.
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Enhanced ferromagnetic moment in Co-doped BiFeO3 thin films studied by soft X-ray circular dichroism
Authors:
V. R. Singh,
V. K. Verma,
K. Ishigami,
G. Shibata,
Y. Yamazaki,
A. Fujimori,
Y. Takeda,
T. Okane,
Y. Saitoh,
H. Yamagami,
Y. Nakamura,
M. Azuma,
Y. Shimakawa
Abstract:
BiFeO$_3$ (BFO) shows both ferroelectricity and magnetic ordering at room temperature but its ferromagnetic component, which is due to spin canting, is negligible. Substitution of transition-metal atoms such as Co for Fe is known to enhance the ferromagnetic component in BFO. In order to reveal the origin of such magnetization enhancement, we performed soft x-ray absorption spectroscopy (XAS) and…
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BiFeO$_3$ (BFO) shows both ferroelectricity and magnetic ordering at room temperature but its ferromagnetic component, which is due to spin canting, is negligible. Substitution of transition-metal atoms such as Co for Fe is known to enhance the ferromagnetic component in BFO. In order to reveal the origin of such magnetization enhancement, we performed soft x-ray absorption spectroscopy (XAS) and soft x-ray magnetic circular dichroism (XMCD) studies of BiFe$_{1-x}$Co$_x$O$_3$ ({\it x} = 0 to 0.30) (BFCO) thin films grown on LaAlO$_3$(001) substrates. The XAS results indicated that the Fe and Co ions are in the Fe$^{3+}$ and Co$^{3+}$ states. The XMCD results showed that the Fe ions show ferromagnetism while the Co ions are antiferromagnetic at room temperature. The XAS and XMCD measurements also revealed that part of the Fe$^{3+}$ ions are tetrahedrally co-ordinated by oxygen ions but that the XMCD signals of the octahedrally coordinated Fe$^{3+}$ ions increase with Co content. The results suggest that an impurity phase such as the ferrimagnetic $γ$-Fe$_2$O$_3$ which exists at low Co concentration decreases with increasing Co concentration and that the ferromagnetic component of the Fe$^{3+}$ ion in the octrahedral crystal fields increases with Co concentration, probably reflecting the increased canting of the Fe$^{3+}$ ions.
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Submitted 25 August, 2013;
originally announced August 2013.
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Itinerant Nature of U 5f States in Uranium Mononitride UN Revealed by Angle Resolved Photoelectron Spectroscopy
Authors:
Shin-ichi Fujimori,
Takuo Ohkochi,
Tetsuo Okane,
Yuji Saitoh,
Atsushi Fujimori,
Hiroshi Yamagami,
Yoshinori Haga,
Etsuji Yamamoto,
Yoshichika Onuki
Abstract:
The electronic structure of the antiferromagnet uranium nitride (UN) has been studied by angle resolved photoelectron spectroscopy using soft X-rays (hn=420-520 eV). Strongly dispersive bands with large contributions from the U 5f states were observed in ARPES spectra, and form Fermi surfaces. The band structure as well as the Fermi surfaces in the paramagnetic phase are well explained by the band…
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The electronic structure of the antiferromagnet uranium nitride (UN) has been studied by angle resolved photoelectron spectroscopy using soft X-rays (hn=420-520 eV). Strongly dispersive bands with large contributions from the U 5f states were observed in ARPES spectra, and form Fermi surfaces. The band structure as well as the Fermi surfaces in the paramagnetic phase are well explained by the band-structure calculation treating all the U 5f electrons as being itinerant, suggesting that itinerant description of the U 5f states is appropriate for this compound. On the other hand, changes in the spectral function due to the antiferromagnetic transition were very small. The shapes of the Fermi surfaces in a paramagnetic phase are highly three-dimensional, and the nesting of Fermi surfaces is unlikely as the origin of the magnetic ordering.
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Submitted 20 November, 2012;
originally announced November 2012.
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Electronic configuration of Mn ions in the $π$-d molecular ferromagnet $β$-Mn phthalocyanine studied by soft x-ray magnetic circular dichroism
Authors:
T. Kataoka,
Y. Sakamoto,
Y. Yamazaki,
V. R. Singh,
A. Fujimori,
Y. Takeda,
T. Ohkochi,
S. -I. Fujimori,
T. Okane,
Y. Saitoh,
H. Yamagami,
A. Tanaka
Abstract:
We have studied the electronic structure of the molecular ferromagnet $β$-Mn phthalocyanine ($β$-MnPc) in a polycrystalline form, which has been reported to show ferromagnetism at T$<$8.6 K, by x-ray absorption spectroscopy (XAS) and x-ray magnetic circular dichroism (XMCD). From the experimental results and subsequent cluster-model calculation, we find that the ferromagnetic Mn ion in $β$-MnPc is…
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We have studied the electronic structure of the molecular ferromagnet $β$-Mn phthalocyanine ($β$-MnPc) in a polycrystalline form, which has been reported to show ferromagnetism at T$<$8.6 K, by x-ray absorption spectroscopy (XAS) and x-ray magnetic circular dichroism (XMCD). From the experimental results and subsequent cluster-model calculation, we find that the ferromagnetic Mn ion in $β$-MnPc is largely in the $^4$$E$$_g$ ground state arising from the ($e$$_{g}$)$^3$($b$$_{2g}$)$^1$($a$$_{1g}$)$^1$ [($d_{xz,yz}$)$^3$($d_{xy}$)$^1$($d_{z^{2}}$)$^1$] configuration of the Mn$^{2+}$ state. Considering that the highest occupied molecular orbital (HOMO) of MnPc with the $^4$$E$$_g$ ground state originates from the $a$$_{1g}$ orbital of the Mn$^{2+}$ ion, it is proposed that $a$$_{1g}$-$a$$_{1g}$ exchange coupling via the $π$ orbitals of the phthalocyanine ring plays a crucial role in the ferromagnetism of $β$-MnPc.
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Submitted 23 January, 2012; v1 submitted 19 January, 2012;
originally announced January 2012.
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Ferromagnetism in ZnO co-doped with Mn and N studied by soft x-ray magnetic circular dichroism
Authors:
T. Kataoka,
Y. Yamazaki,
V. R. Singh,
Y. Sakamoto,
A. Fujimori,
Y. Takeda,
T. Ohkochi,
S. -I. Fujimori,
T. Okane,
Y. Saitoh,
H. Yamagami,
A. Tanaka,
M. Kapilashrami,
L. Belova,
K. V. Rao
Abstract:
We have investigated the electronic structure of ZnO:Mn and ZnO:Mn,N thin films using x-ray magnetic circular dichroism (XMCD) and resonance-photoemission spectroscopy. From the Mn 2$p$$\rightarrow3d$ XMCD results, it is shown that, while XMCD signals only due to paramagnetic Mn$^{2+}$ ions were observed in ZnO:Mn, nonmagnetic, paramagnetic and ferromagnetic Mn$^{2+}$ ions coexist in ZnO:Mn,N. XMC…
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We have investigated the electronic structure of ZnO:Mn and ZnO:Mn,N thin films using x-ray magnetic circular dichroism (XMCD) and resonance-photoemission spectroscopy. From the Mn 2$p$$\rightarrow3d$ XMCD results, it is shown that, while XMCD signals only due to paramagnetic Mn$^{2+}$ ions were observed in ZnO:Mn, nonmagnetic, paramagnetic and ferromagnetic Mn$^{2+}$ ions coexist in ZnO:Mn,N. XMCD signals of ZnO:Mn,N revealed that the localized Mn$^{2+}$ ground state and Mn$^{2+}$ state hybridized with ligand hole coexisted, implying $p$-$d$ exchange coupling. In the valence-band spectra, spectral weight near the Fermi level was suppressed, suggesting that interaction between magnetic moments in ZnO:Mn,N has localized nature.
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Submitted 28 December, 2011;
originally announced January 2012.
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Electronic Structure of Heavy Fermion Uranium Compounds Studied by Core-Level Photoelectron Spectroscopy
Authors:
Shin-ichi Fujimori,
Takuo Ohkochi,
Ikuto Kawasaki,
Akira Yasui,
Yukiharu Takeda,
Tetsuo Okane,
Yuji Saitoh,
Atsushi Fujimori,
Hiroshi Yamagami,
Yoshinori Haga,
Etsuji Yamamoto,
Yoshifumi Tokiwa,
Shugo Ikeda,
Takashi Sugai,
Hitoshi Ohkuni,
Noriaki Kimura,
Yoshichika Onuki
Abstract:
High-energy-resolution core-level and valence-band photoelectron spectroscopic studies were performed for the heavy Fermion uranium compounds UGe2, UCoGe, URhGe, URu2Si2, UNi2Al3, UPd2Al3, and UPt3 as well as typical localized and itinerant uranium compounds to understand the relationship between the uranium valence state and their core-level spectral line shapes. In addition to the main line and…
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High-energy-resolution core-level and valence-band photoelectron spectroscopic studies were performed for the heavy Fermion uranium compounds UGe2, UCoGe, URhGe, URu2Si2, UNi2Al3, UPd2Al3, and UPt3 as well as typical localized and itinerant uranium compounds to understand the relationship between the uranium valence state and their core-level spectral line shapes. In addition to the main line and high-binding energy satellite structure recognized in the core-level spectra of uranium compounds, a shoulder structure on the lower binding energy side of the main lines of localized and nearly localized uranium compounds was also found. The spectral line shapes show a systematic variation depending on the U 5f electronic structure. The core-level spectra of UGe2, UCoGe, URhGe, URu2Si2, and UNi2Al3 are rather similar to those of itinerant compounds, suggesting that U 5f electrons in these compounds are well hybridized with ligand states. On the other hand, the core-level spectra of UPd2Al3 and UPt3 show considerably different spectral line shapes from those of the itinerant compounds, suggesting that U 5f electrons in UPd2Al3 and UPt3 are less hybridized with ligand states, leading to the correlated nature of U 5f electrons in these compounds. The dominant final state characters in their core-level spectra suggest that the numbers of 5f electrons in UGe2, UCoGe, URhGe, URu2Si2, UNi2Al3, and UPd2Al3 are close to but less than three, while that of UPt3 is close to two rather than to three.
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Submitted 31 October, 2011;
originally announced October 2011.
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Bulk 5f electronic states in uranium monochalcogenide US
Authors:
Y. Takeda,
T. Okane,
T. Ohkochi,
Y. Saitoh,
H. Yamagami,
A. Fujimori,
A. Ochiai
Abstract:
We have investigated the electronic states of the uranium monochalcogenide US, which is a typical ferromagnetic uranium compound, using soft x-ray photoemission spectroscopy (SX-PES). In early ultraviolet photoemission spectroscopy studies, two peak structures of the U 5f states were observed and have been interpreted that one has an itinerant character around the Fermi level (EF) and the other…
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We have investigated the electronic states of the uranium monochalcogenide US, which is a typical ferromagnetic uranium compound, using soft x-ray photoemission spectroscopy (SX-PES). In early ultraviolet photoemission spectroscopy studies, two peak structures of the U 5f states were observed and have been interpreted that one has an itinerant character around the Fermi level (EF) and the other located below EF has a character of localized U 5f electrons. In this study, the intrinsic bulk valence-band spectrum of US was first deduced by estimating the contribution of surface states to the valence-band spectrum using core-level photoemission spectra. We conclude that the electronic structure of US can be basically described by the itinerant nature of the U 5f electrons from comparison with theoretical valence-band spectra obtained by band-structure calculation in the local-density approximation.
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Submitted 16 September, 2009;
originally announced September 2009.
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4f-derived Fermi Surfaces of CeRu2(Si[1-x]Ge[x])2 near the Quantum Critical Point: Resonant Soft X-ray ARPES Study
Authors:
T. Okane,
T. Ohkochi,
Y. Takeda,
S. -i. Fujimori,
A. Yasui,
Y. Saitoh,
H. Yamagami,
A. Fujimori,
Y. Matsumoto,
M. Sugi,
N. Kimura,
T. Komatsubara,
H. Aoki
Abstract:
Angle-resolved photoelectron spectroscopy in the Ce 3d-4f excitation region was measured for the paramagnetic state of CeRu2Si2, CeRu2(Si0.82Ge0.18)2, and LaRu2Si2 to investigate the changes of the 4$f$ electron Fermi surfaces around the quantum critical point. While the difference of the Fermi surfaces between CeRu2Si2 and LaRu2Si2 was experimentally confirmed, a strong 4f-electron character wa…
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Angle-resolved photoelectron spectroscopy in the Ce 3d-4f excitation region was measured for the paramagnetic state of CeRu2Si2, CeRu2(Si0.82Ge0.18)2, and LaRu2Si2 to investigate the changes of the 4$f$ electron Fermi surfaces around the quantum critical point. While the difference of the Fermi surfaces between CeRu2Si2 and LaRu2Si2 was experimentally confirmed, a strong 4f-electron character was observed in the band structures and the Fermi surfaces of CeRu2Si2 and CeRu2(Si0.82Ge0.18)2, consequently indicating a delocalized nature of the 4$f$ electrons in both compounds. The absence of Fermi surface reconstruction across the critical composition suggests that SDW quantum criticality is more appropriate than local quantum criticality in CeRu2(Si[1-x]Ge[x])2.
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Submitted 17 June, 2009;
originally announced June 2009.
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Electronic structure and magnetism of the diluted magnetic semiconductor Fe-doped ZnO nano-particles
Authors:
T. Kataoka,
M. Kobayashi,
Y. Sakamoto,
G. S. Song,
A. Fujimori,
F. -H. Chang,
H. -J. Lin,
D. J. Huang,
C. T. Chen,
T. Ohkochi,
Y. Takeda,
T. Okane,
Y. Saitoh,
H. Yamagami,
A. Tanaka,
S. K. Mandal,
T. K. Nath,
D. Karmakar,
I. Dasgupta
Abstract:
We have studied the electronic structure of Zn$_{0.9}$Fe$_{0.1}$O nano-particles, which have been reported to show ferromagnetism at room temperature, by x-ray photoemission spectroscopy (XPS), resonant photoemission spectroscopy (RPES), x-ray absorption spectroscopy (XAS) and x-ray magnetic circular dichroism (XMCD). From the experimental and cluster-model calculation results, we find that Fe a…
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We have studied the electronic structure of Zn$_{0.9}$Fe$_{0.1}$O nano-particles, which have been reported to show ferromagnetism at room temperature, by x-ray photoemission spectroscopy (XPS), resonant photoemission spectroscopy (RPES), x-ray absorption spectroscopy (XAS) and x-ray magnetic circular dichroism (XMCD). From the experimental and cluster-model calculation results, we find that Fe atoms are predominantly in the Fe$^{3+}$ ionic state with mixture of a small amount of Fe$^{2+}$ and that Fe$^{3+}$ ions are dominant in the surface region of the nano-particles. It is shown that the room temperature ferromagnetism in the Zn$_{0.9}$Fe$_{0.1}$O nano-particles is primarily originated from the antiferromagnetic coupling between unequal amounts of Fe$^{3+}$ ions occupying two sets of nonequivalent positions in the region of the XMCD probing depth of $\sim$ 2-3 nm.
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Submitted 12 April, 2009;
originally announced April 2009.
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Fermi Surface Variation of Ce 4f-electrons in Hybridization Controlled Heavy-Fermion Systems
Authors:
H. J. Im,
T. Ito,
H. Miyazaki,
S. Kimura,
Y. S. Kwon,
Y. Saitoh,
S. -I. Fujimori,
A. Yasui,
H. Yamagami
Abstract:
Ce 3d-4f resonant angle-resolved photoemission measurements on CeCoGe$_{1.2}$Si$_{0.8}$ and CeCoSi$_{2}$ have been performed to understand the Fermi surface topology as a function of hybridization strength between Ce 4$f$- and conduction electrons in heavy-fermion systems. We directly observe that the hole-like Ce 4$f$-Fermi surfaces of CeCoSi$_{2}$ is smaller than that of CeCoGe$_{1.2}$Si…
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Ce 3d-4f resonant angle-resolved photoemission measurements on CeCoGe$_{1.2}$Si$_{0.8}$ and CeCoSi$_{2}$ have been performed to understand the Fermi surface topology as a function of hybridization strength between Ce 4$f$- and conduction electrons in heavy-fermion systems. We directly observe that the hole-like Ce 4$f$-Fermi surfaces of CeCoSi$_{2}$ is smaller than that of CeCoGe$_{1.2}$Si$_{0.8}$, indicating the evolution of the Ce 4$f$-Fermi surface with the increase of the hybridization strength. In comparision with LDA calculation, the Fermi surface variation cannot be understood even though the overall electronic structure are roughly explained, indicating the importance of strong correlation effects. We also discuss the relation between the Ce 4$f$-Fermi surface variation and the Kondo peaks.
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Submitted 14 October, 2014; v1 submitted 7 April, 2009;
originally announced April 2009.
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Electronic structure of Ga$_{1-x}$Cr$_{x}$N and Si-doping effects studied by photoemission and X-ray absorption spectroscopy
Authors:
G. S. Song,
M. Kobayashi,
J. I. Hwang,
T. Kataoka,
M. Takizawa,
A. Fujimori,
T. Ohkouchi,
Y. Takeda,
T. Okane,
Y. Saitoh,
H. Yamagami,
F. -H. Chang,
L. Lee,
H. -J. Lin,
D. J. Huang,
C. T. Chen,
S. Kimura,
M. Funakoshi,
S. Hasegawa,
H. Asahi
Abstract:
The electronic structure of the magnetic semiconductor Ga$_{1-x}$Cr$_{x}$N and the effect of Si doping on it have been investigated by photoemission and soft x-ray absorption spectroscopy. We have confirmed that Cr in GaN is predominantly trivalent substituting for Ga, and that Cr 3$d$ states appear within the band gap of GaN just above the N 2$p$-derived valence-band maximum. As a result of Si…
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The electronic structure of the magnetic semiconductor Ga$_{1-x}$Cr$_{x}$N and the effect of Si doping on it have been investigated by photoemission and soft x-ray absorption spectroscopy. We have confirmed that Cr in GaN is predominantly trivalent substituting for Ga, and that Cr 3$d$ states appear within the band gap of GaN just above the N 2$p$-derived valence-band maximum. As a result of Si doping, downward shifts of the core levels (except for Cr 2$p$) and the formation of new states near the Fermi level were observed, which we attribute to the upward chemical potential shift and the formation of a small amount of Cr$^{2+}$ species caused by the electron doping. Possibility of Cr-rich cluster growth by Si doping are discussed based on the spectroscopic and magnetization data.
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Submitted 21 May, 2008;
originally announced May 2008.
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Local electronic structure of Cr in the II-VI diluted ferromagnetic semiconductor Zn$_{1-x}$Cr$_x$Te
Authors:
M. Kobayashi,
Y. Ishida,
J. I. Hwang,
G. S. Song,
A. Fujimori,
C. -S. Yang,
L. Lee,
H. -J. Lin,
D. -J. Huang,
C. T. Chen,
Y. Takeda,
S. -I. Fujimori,
T. Okane,
Y. Saitoh,
H. Yamagami,
K. Kobayashi,
A. Tanaka,
H. Saito,
K. Ando
Abstract:
The electronic structure of the Cr ions in the diluted ferromagnetic semiconductor Zn$_{1-x}$Cr$_x$Te ($x=0.03$ and 0.15) thin films has been investigated using x-ray magnetic circular dichroism (XMCD) and photoemission spectroscopy (PES). Magnetic-field ($H$) and temperature ($T$) dependences of the Cr $2p$ XMCD spectra well correspond to the magnetization measured by a SQUID magnetometer. The…
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The electronic structure of the Cr ions in the diluted ferromagnetic semiconductor Zn$_{1-x}$Cr$_x$Te ($x=0.03$ and 0.15) thin films has been investigated using x-ray magnetic circular dichroism (XMCD) and photoemission spectroscopy (PES). Magnetic-field ($H$) and temperature ($T$) dependences of the Cr $2p$ XMCD spectra well correspond to the magnetization measured by a SQUID magnetometer. The line shape of the Cr $2p$ XMCD spectra is independent of $H$, $T$, and $x$, indicating that the ferromagnetism is originated from the same electronic states of the Cr ion. Cluster-model analysis indicates that although there are two or more kinds of Cr ions in the Zn$_{1-x}$Cr$_x$Te samples, the ferromagnetic XMCD signal is originated from Cr ions substituted for the Zn site. The Cr 3d partial density of states extracted using Cr $2p \to 3d$ resonant PES shows a broad feature near the top of the valence band, suggesting strong $s$,$p$-$d$ hybridization. No density of states is detected at the Fermi level, consistent with their insulating behavior. Based on these findings, we conclude that double exchange mechanism cannot explain the ferromagnetism in Zn$_{1-x}$Cr$_{x}$Te.
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Submitted 21 April, 2008;
originally announced April 2008.
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Soft X-ray Absorption and Photoemission Studies of Ferromagnetic Mn-Implanted 3$C$-SiC
Authors:
Gyong Sok Song,
Takashi Kataoka,
Masaki Kobayashi,
Jong Il Hwang,
Masaru Takizawa,
Atsushi Fujimori,
Takuo Ohkochi,
Yukiharu Takeda,
Tetsuo Okane,
Yuji Saitoh,
Hiroshi Yamagami,
Fumiyoshi Takano,
Hiro Akinaga
Abstract:
We have performed x-ray photoemission spectroscopy (XPS), x-ray absorption spectroscopy (XAS), and resonant photoemission spectroscopy (RPES) measurements of Mn-implanted 3$C$-SiC (3$C$-SiC:Mn) and carbon-incorporated Mn$_{5}$Si$_{2}$ (Mn$_{5}$Si$_{2}$:C). The Mn 2$p$ core-level XPS and XAS spectra of 3$C$-SiC:Mn and Mn$_{5}$Si$_{2}$:C were similar to each other and showed "intermediate" behavio…
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We have performed x-ray photoemission spectroscopy (XPS), x-ray absorption spectroscopy (XAS), and resonant photoemission spectroscopy (RPES) measurements of Mn-implanted 3$C$-SiC (3$C$-SiC:Mn) and carbon-incorporated Mn$_{5}$Si$_{2}$ (Mn$_{5}$Si$_{2}$:C). The Mn 2$p$ core-level XPS and XAS spectra of 3$C$-SiC:Mn and Mn$_{5}$Si$_{2}$:C were similar to each other and showed "intermediate" behaviors between the localized and itinerant Mn 3$d$ states.
The intensity at the Fermi level was found to be suppressed in 3$C$-SiC:Mn compared with Mn$_{5}$Si$_{2}$:C. These observations are consistent with the formation of Mn$_{5}$Si$_{2}$:C clusters in the 3$C$-SiC host, as observed in a recent transmission electron microscopy study.
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Submitted 5 April, 2008; v1 submitted 14 March, 2008;
originally announced March 2008.
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Hybridization between the conduction band and 3d orbitals in the oxide-based diluted magnetic semiconductor In$_{2-x}$V$_x$O$_3$
Authors:
M. Kobayashi,
Y. Ishida,
J. I. Hwang,
G. S. Song,
M. Takizawa,
A. Fujimori,
Y. Takeda,
T. Ohkochi,
T. Okane,
Y. Saitoh,
H. Yamagami,
Amita Gupta,
H. T. Cao,
K. V. Rao
Abstract:
The electronic structure of In$_{2-x}$V$_x$O$_3$ ($x=0.08$) has been investigated using photoemission spectroscopy (PES) and x-ray absorption spectroscopy (XAS). The V $2p$ core-level PES and XAS spectra revealed trivalent electronic state of the V ion, consistent with the substitution of the V ion for the In site. The V 3d partial density of states obtained by the resonant PES technique showed…
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The electronic structure of In$_{2-x}$V$_x$O$_3$ ($x=0.08$) has been investigated using photoemission spectroscopy (PES) and x-ray absorption spectroscopy (XAS). The V $2p$ core-level PES and XAS spectra revealed trivalent electronic state of the V ion, consistent with the substitution of the V ion for the In site. The V 3d partial density of states obtained by the resonant PES technique showed a sharp peak above the O $2p$ band. While the O $1s$ XAS spectrum of In$_{2-x}$V$_x$O$_3$ was similar to that of In$_2$O$_3$, there were differences in the In $3p$ and 3d XAS spectra between V-doped and pure In$_2$O$_3$. The observations give clear evidence for hybridization between the In conduction band and the V 3d orbitals in In$_{2-x}$V$_x$O$_3$.
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Submitted 28 January, 2008;
originally announced January 2008.
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Nature of magnetic coupling between Mn ions in as-grown Ga$_{1-x}$Mn$_{x}$As studied by x-ray magnetic circular dichroism
Authors:
Y. Takeda,
M. Kobayashi,
T. Okane,
T. Ohkochi,
J. Okamoto,
Y. Saitoh,
K. Kobayashi,
H. Yamagami,
A. Fujimori,
A. Tanaka,
J. Okabayashi,
M. Oshima,
S. Ohya,
P. N. Hai,
M. Tanaka
Abstract:
The magnetic properties of as-grown Ga$_{1-x}$Mn$_{x}$As have been investigated by the systematic measurements of temperature and magnetic field dependent soft x-ray magnetic circular dichroism (XMCD). The {\it intrinsic} XMCD intensity at high temperatures obeys the Curie-Weiss law, but residual spin magnetic moment appears already around 100 K, significantly above Curie temperature ($T_C$), su…
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The magnetic properties of as-grown Ga$_{1-x}$Mn$_{x}$As have been investigated by the systematic measurements of temperature and magnetic field dependent soft x-ray magnetic circular dichroism (XMCD). The {\it intrinsic} XMCD intensity at high temperatures obeys the Curie-Weiss law, but residual spin magnetic moment appears already around 100 K, significantly above Curie temperature ($T_C$), suggesting that short-range ferromagnetic correlations are developed above $T_C$. The present results also suggest that antiferromagnetic interaction between the substitutional and interstitial Mn (Mn$_{int}$) ions exists and that the amount of the Mn$_{int}$ affects $T_C$.
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Submitted 9 January, 2008; v1 submitted 7 January, 2008;
originally announced January 2008.
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Systematic changes of the electronic structure of the diluted ferromagnetic oxide Li-doped Ni$_{1-x}$Fe$_x$O with hole doping
Authors:
M. Kobayashi,
J. I. Hwang,
G. S. Song,
Y. Ooki,
M. Takizawa,
A. Fujimori,
Y. Takeda,
S. -I. Fujimori,
K. Terai,
T. Okane,
Y. Saitoh,
H. Yamagami,
Y. -H. Lin,
C. -W. Nan
Abstract:
The electronic structure of Li-doped Ni$_{1-x}$Fe$_x$O has been investigated using photoemission spectroscopy (PES) and x-ray absorption spectroscopy (XAS). The Ni $2p$ core-level PES and XAS spectra were not changed by Li doping. In contrast, the Fe$^{3+}$ intensity increased with Li doping relative to the Fe$^{2+}$ intensity. However, the increase of Fe$^{3+}$ is only $\sim 5%$ of the doped Li…
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The electronic structure of Li-doped Ni$_{1-x}$Fe$_x$O has been investigated using photoemission spectroscopy (PES) and x-ray absorption spectroscopy (XAS). The Ni $2p$ core-level PES and XAS spectra were not changed by Li doping. In contrast, the Fe$^{3+}$ intensity increased with Li doping relative to the Fe$^{2+}$ intensity. However, the increase of Fe$^{3+}$ is only $\sim 5%$ of the doped Li content, suggesting that most of the doped holes enter the O $2p$ and/or the charge-transferred configuration Ni $3d^8\underline{L}$. The Fe 3d partial density of states and the host valence-band emission near valence-band maximum increased with Li content, consistent with the increase of electrical conductivity. Based on these findings, percolation of bound magnetic polarons is proposed as an origin of the ferromagnetic behavior.
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Submitted 29 November, 2007;
originally announced November 2007.
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Photoemission and x-ray absorption studies of valence states in (Ni,Zn,Fe,Ti)$_{3}$O$_{4}$ thin films exhibiting photo-induced magnetization
Authors:
M. Kobayashi,
Y. Ooki,
M. Takizawa,
G. S. Song,
A. Fujimori,
Y. Takeda,
K. Terai,
T. Okane,
S. -I. Fujimori,
Y. Saitoh,
H. Yamagami,
M. Seki,
T. Kawai,
H. Tabata
Abstract:
By means of photoemission and x-ray absorption spectroscopy, we have studied the electronic structure of (Ni,Zn,Fe,Ti)$_{3}$O$_{4}$ thin films, which exhibits a cluster glass behavior with a spin-freezing temperature $T_f$ of $\sim 230$ K and photo-induced magnetization (PIM) below $T_f$. The Ni and Zn ions were found to be in the divalent states. Most of the Fe and Ti ions in the thin films wer…
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By means of photoemission and x-ray absorption spectroscopy, we have studied the electronic structure of (Ni,Zn,Fe,Ti)$_{3}$O$_{4}$ thin films, which exhibits a cluster glass behavior with a spin-freezing temperature $T_f$ of $\sim 230$ K and photo-induced magnetization (PIM) below $T_f$. The Ni and Zn ions were found to be in the divalent states. Most of the Fe and Ti ions in the thin films were trivalent (Fe$^{3+}$) and tetravalent (Ti$^{4+}$), respectively. While Ti doping did not affect the valence states of the Ni and Zn ions, a small amount of Fe$^{2+}$ ions increased with Ti concentration, consistent with the proposed charge-transfer mechanism of PIM.
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Submitted 15 November, 2007;
originally announced November 2007.
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Itinerant to localized transition of f electrons in antiferromagnetic superconductor UPd2Al3
Authors:
Shin-ichi Fujimori,
Yuji Saitoh,
Tetsuo Okane,
Atsushi Fujimori,
Hiroshi Yamagami,
Yoshinori Haga,
Etsuji Yamamoto,
Yoshichika Onuki
Abstract:
Electrons in solids have been conventionally classified as either band-like itinerant ones or atomic-like localized ones depending on their properties. For heavy Fermion (HF) compounds, however, the f electrons show both itinerant and localized behaviours depending on temperature. Above the characteristic temperature T*, which is typically of the order of few K to few tens K, their magnetic prop…
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Electrons in solids have been conventionally classified as either band-like itinerant ones or atomic-like localized ones depending on their properties. For heavy Fermion (HF) compounds, however, the f electrons show both itinerant and localized behaviours depending on temperature. Above the characteristic temperature T*, which is typically of the order of few K to few tens K, their magnetic properties are well described by the ionic f-electron models, suggesting that the f-electrons behave as 'localized' electrons. On the other hand, well below T*, their Fermi surfaces (FS's) have been observed by magneto-oscillatory techniques, and generally they can be explained well by the 'itinerant' f-electron model. These two models assume totally different natures of felectrons, and how they transform between localized and itinerant state as a function of temperatures has never been understood on the level of their electronic structures. Here we have studied the band structure of the HF antiferromagnetic superconductor UPd2Al3 well below and above T* by angle-resolved photoelectron spectroscopy (ARPES), and revealed the temperature dependence of the electronic structure. We have found that the f-bands, which form the FS's at low temperatures are excluded from FS's at high temperatures. The present results demonstrate how the same f-electrons show both itinerant and localized behaviours on the level of electronic structure, and provide an important information for the unified description of the localized and itinerant nature of HF compounds.
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Submitted 11 May, 2007;
originally announced May 2007.
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Itinerant U 5f band states in the layered compound UFeGa5 observed by soft X-ray angle-resolved photoemission spectroscopy
Authors:
Shin-ichi Fujimori,
Kota Terai,
Yukiharu Takeda,
Tetsuo Okane,
Yuji Saitoh,
Yasuji Muramatsu,
Atsushi Fujimori,
Hiroshi Yamagami,
Yoshifumi Tokiwa,
Shugo Ikeda,
Tatsuma D. Matsuda,
Yoshinori Haga,
Etsuji Yamamoto,
Yoshichika Onuki
Abstract:
We have performed angle-resolved photoemission spectroscopy (ARPES) experiments on paramagnetic UFeGa5 using soft X-ray synchrotron radiation (hn=500eV) and derived the bulk- and U 5f-sensitive electronic structure of UFeGa5. Although the agreement between the experimental band structure and the LDA calculation treating U 5f electrons as being itinerant is qualitative, the morphology of the Ferm…
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We have performed angle-resolved photoemission spectroscopy (ARPES) experiments on paramagnetic UFeGa5 using soft X-ray synchrotron radiation (hn=500eV) and derived the bulk- and U 5f-sensitive electronic structure of UFeGa5. Although the agreement between the experimental band structure and the LDA calculation treating U 5f electrons as being itinerant is qualitative, the morphology of the Fermi surface is well explained by the calculation, suggesting that the U 5f states can be essentially understood within the itinerant-electron model.
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Submitted 19 April, 2006; v1 submitted 16 February, 2006;
originally announced February 2006.