Showing 1–33 of 33 results for author: Winnerl, S

Probing the band splitting near the $Γ$ point in the van der Waals magnetic semiconductor CrSBr

Authors: Kaiman Lin, Yi Li, Mahdi Ghorbani-Asl, Zdenek Sofer, Stephan Winnerl, Artur Erbe, Arkady V. Krasheninnikov, Manfred Helm, Shengqiang Zhou, Yaping Dan, Slawomir Prucnal

Abstract: This study investigates the electronic band structure of Chromium Sulfur Bromide (CrSBr) through comprehensive photoluminescence (PL) characterization. We clearly identify low-temperature optical transitions between two closely adjacent conduction-band states and two different valence-band states. The analysis of the PL data robustly unveils energy splittings, bandgaps and excitonic transitions ac… ▽ More This study investigates the electronic band structure of Chromium Sulfur Bromide (CrSBr) through comprehensive photoluminescence (PL) characterization. We clearly identify low-temperature optical transitions between two closely adjacent conduction-band states and two different valence-band states. The analysis of the PL data robustly unveils energy splittings, bandgaps and excitonic transitions across different thicknesses of CrSBr, ranging from monolayer to bulk. Temperature-dependent PL measurements elucidate the stability of the band splitting below the Néel temperature, suggesting that magnons coupled with excitons are responsible for the symmetry breaking and brightening of the transitions from the secondary conduction band minimum (CBM2) to the global valence band maximum (VBM1). Collectively, these results not only reveal band splitting in both the conduction and valence bands, but also point to an intricate interplay between the optical, electronic and magnetic properties of antiferromagnetic two-dimensional van der Waals crystals. △ Less

Submitted 2 April, 2024; originally announced April 2024.

Hot electron dynamics in a semiconductor nanowire under intense THz excitation

Authors: Andrei Luferau, Maximilian Obst, Stephan Winnerl, Alexej Pashkin, Susanne C. Kehr, Emmanouil Dimakis, Felix G. Kaps, Osama Hatem, Kalliopi Mavridou, Lukas M. Eng, Manfred Helm

Abstract: We report THz-pump / mid-infrared probe near-field studies on Si-doped GaAs-InGaAs core-shell nanowires utilizing THz radiation from the free-electron laser FELBE. Upon THz excitation of free carriers, we observe a red shift of the plasma resonance in both amplitude and phase spectra, which we attribute to the heating up of electrons in the conduction band. The simulation of heated electron distri… ▽ More We report THz-pump / mid-infrared probe near-field studies on Si-doped GaAs-InGaAs core-shell nanowires utilizing THz radiation from the free-electron laser FELBE. Upon THz excitation of free carriers, we observe a red shift of the plasma resonance in both amplitude and phase spectra, which we attribute to the heating up of electrons in the conduction band. The simulation of heated electron distributions anticipates a significant electron population in both L- and X-valleys. The two-temperature model is utilized for a quantitative analysis of the dynamics of the electron gas temperature under THz pumping at various power levels. △ Less

Submitted 25 March, 2024; originally announced March 2024.

Comments: Manuscript + Supplementary Information

Journal ref: ACS Photonics 11, 3123 (2024)

Strong Exciton-Phonon Coupling as a Fingerprint of Magnetic Ordering in van der Waals Layered CrSBr

Authors: Kaiman Lin, Xiaoxiao Sun, Florian Dirnberger, Yi Li, Jiang Qu, Peiting Wen, Zdenek Sofer, Aljoscha Söll, Stephan Winnerl, Manfred Helm, Shengqiang Zhou, Yaping Dan, Slawomir Prucnal

Abstract: The layered, air-stable van der Waals antiferromagnetic compound CrSBr exhibits pronounced coupling between its optical, electronic, and magnetic properties. As an example, exciton dynamics can be significantly influenced by lattice vibrations through exciton-phonon coupling. Using low-temperature photoluminescence spectroscopy, we demonstrate the effective coupling between excitons and phonons in… ▽ More The layered, air-stable van der Waals antiferromagnetic compound CrSBr exhibits pronounced coupling between its optical, electronic, and magnetic properties. As an example, exciton dynamics can be significantly influenced by lattice vibrations through exciton-phonon coupling. Using low-temperature photoluminescence spectroscopy, we demonstrate the effective coupling between excitons and phonons in nanometer-thick CrSBr. By careful analysis, we identify that the satellite peaks predominantly arise from the interaction between the exciton and an optical phonon with a frequency of 118 cm-1 (~14.6 meV) due to the out-of-plane vibration of Br atoms. Power-dependent and temperature-dependent photoluminescence measurements support exciton-phonon coupling and indicate a coupling between magnetic and optical properties, suggesting the possibility of carrier localization in the material. The presence of strong coupling between the exciton and the lattice may have important implications for the design of light-matter interactions in magnetic semiconductors and provides new insights into the exciton dynamics in CrSBr. This highlights the potential for exploiting exciton-phonon coupling to control the optical properties of layered antiferromagnetic materials. △ Less

Submitted 31 January, 2024; v1 submitted 9 August, 2023; originally announced August 2023.

Comments: 21 pages, together with suppl

Journal ref: ACS Nano 18, 2898-2905 (2024)

Possible Eliashberg-type superconductivity enhancement effects in a two-band superconductor MgB2 driven by narrow-band THz pulses

Authors: Sergei Sobolev, Amon Lanz, Tao Dong, Amrit Pokharel, Viktor Kabanov, Tie-Quan Xu, Yue Wang, Zi-Zhao Gan, L. Y. Shi, Nan-Lin Wang, Alexej Pashkin, Ece Uykur, Stephan Winnerl, Manfred Helm, Jure Demsar

Abstract: We study THz-driven condensate dynamics in epitaxial thin films of MgB$_{2}$, a prototype two-band superconductor (SC) with weak interband coupling. The temperature and excitation density dependent dynamics follow the behavior predicted by the phenomenological bottleneck model for the single-gap SC, implying adiabatic coupling between the two condensates on the ps timescale. The amplitude of the T… ▽ More We study THz-driven condensate dynamics in epitaxial thin films of MgB$_{2}$, a prototype two-band superconductor (SC) with weak interband coupling. The temperature and excitation density dependent dynamics follow the behavior predicted by the phenomenological bottleneck model for the single-gap SC, implying adiabatic coupling between the two condensates on the ps timescale. The amplitude of the THz-driven suppression of condensate density reveals an unexpected decrease in pair-breaking efficiency with increasing temperature - unlike in the case of optical excitation. The reduced pair-breaking efficiency of narrow-band THz pulses, displaying minimum near $\approx0.7$ T$_{c}$, is attributed to THz-driven, long-lived, non-thermal quasiparticle distribution, resulting in Eliashberg-type enhancement of superconductivity, competing with pair-breaking. △ Less

Submitted 1 August, 2023; originally announced August 2023.

Coherent phonon and unconventional carriers in the magnetic kagome metal Fe$_3$Sn$_2$

Authors: M. V. Gonçalves-Faria, A. Pashkin, Q. Wang, H. C. Lei, S. Winnerl, A. A. Tsirlin, M. Helm, E. Uykur

Abstract: Temperature- and fluence-dependent carrier dynamics of the magnetic Kagome metal Fe$_3$Sn$_2$ were studied using the ultrafast optical pump-probe technique. Two carrier relaxation processes ($τ_1$ and $τ_2$) and a laser induced coherent optical phonon were observed. By using the two-temperature model for metals, we ascribe the shorter relaxation $τ_1$ (~1 ps) to hot electrons transferring their en… ▽ More Temperature- and fluence-dependent carrier dynamics of the magnetic Kagome metal Fe$_3$Sn$_2$ were studied using the ultrafast optical pump-probe technique. Two carrier relaxation processes ($τ_1$ and $τ_2$) and a laser induced coherent optical phonon were observed. By using the two-temperature model for metals, we ascribe the shorter relaxation $τ_1$ (~1 ps) to hot electrons transferring their energy to the crystal lattice via electron-phonon scattering. $τ_2$ (~25 ps), on the other hand, cannot be explained as a conventional process and is attributed to the unconventional (localized) carriers in the material. The observed coherent oscillation is assigned to be a totally symmetric A$_{1g}$ optical phonon dominated by Sn displacements out of the Kagome planes, and possesses a prominently large amplitude, on the order of 10$^{-3}$, comparable to the maximum of the reflectivity change ($Δ$R/R). This amplitude is equivalent to charge-density-wave (CDW) systems, although no signs of such an instability were hitherto reported in Fe$_3$Sn$_2$. Our results set an unexpected connection between Fe$_3$Sn$_2$ and kagome metals with CDW instabilities, and suggest a unique interplay between phonon and electron dynamics in this compound. △ Less

Submitted 11 July, 2023; originally announced July 2023.

Comments: 12 pages, 14 figures

Strong transient magnetic fields induced by THz-driven plasmons in graphene disks

Authors: Jeong Woo Han, Pavlo Sai, Dmytro But, Ece Uykur, Stephan Winnerl, Gagan Kumar, Matthew L. Chin, Rachael L. Myers-Ward, Matthew T. Dejarld, Kevin M. Daniels, Thomas E. Murphy, Wojciech Knap, Martin Mittendorff

Abstract: Strong circularly polarized excitation opens up the possibility to generate and control effective magnetic fields in solid state systems, e.g., via the optical inverse Faraday effect or the phonon inverse Faraday effect. While these effects rely on material properties that can be tailored only to a limited degree, plasmonic resonances can be fully controlled by choosing proper dimensions and carri… ▽ More Strong circularly polarized excitation opens up the possibility to generate and control effective magnetic fields in solid state systems, e.g., via the optical inverse Faraday effect or the phonon inverse Faraday effect. While these effects rely on material properties that can be tailored only to a limited degree, plasmonic resonances can be fully controlled by choosing proper dimensions and carrier concentrations. Plasmon resonances provide new degrees of freedom that can be used to tune or enhance the light-induced magnetic field in engineered metamaterials. Here we employ graphene disks to demonstrate light-induced transient magnetic fields from a plasmonic circular current with extremely high efficiency. The effective magnetic field at the plasmon resonance frequency of the graphene disks (3.5 THz) is evidenced by a strong (~1°) ultrafast Faraday rotation (~ 20 ps). In accordance with reference measurements and simulations, we estimated the strength of the induced magnetic field to be on the order of 0.7 T under a moderate pump fluence of about 440 nJ cm-2. △ Less

Submitted 10 July, 2023; originally announced July 2023.

Journal ref: Nature Communications 14, 7493 (2023)

Ultrafast Relaxation Dynamics of Spin-Density Wave Order in BaFe$_2$As$_2$ under High Pressures

Authors: Ivan Fotev, Stephan Winnerl, Saicharan Aswartham, Sabine Wurmehl, Bernd Büchner, Harald Schneider, Manfred Helm, Alexej Pashkin

Abstract: BaFe$_2$As$_2$ is the parent compound for a family of iron-based high-temperature superconductors as well as a prototypical example of the spin-density wave (SDW) system. In this study, we perform an optical pump-probe study of this compound to systematically investigate the SDW order across the pressure-temperature phase diagram. The suppression of the SDW order by pressure manifests itself by th… ▽ More BaFe$_2$As$_2$ is the parent compound for a family of iron-based high-temperature superconductors as well as a prototypical example of the spin-density wave (SDW) system. In this study, we perform an optical pump-probe study of this compound to systematically investigate the SDW order across the pressure-temperature phase diagram. The suppression of the SDW order by pressure manifests itself by the increase of relaxation time together with the decrease of the pump-probe signal and the pump energy necessary for complete vaporization of the SDW condensate. We have found that the pressure-driven suppression of the SDW order at low temperature occurs gradually in contrast to the thermally-induced SDW transition. Our results suggest that the pressure-driven quantum phase transition in BaFe$_2$As$_2$ (and probably other iron pnictides) is continuous and it is caused by the gradual worsening of the Fermi-surface nesting conditions. △ Less

Submitted 17 April, 2023; originally announced April 2023.

Journal ref: Phys. Rev. B 108, 035101 (2023)

Cavity-mediated thermal control of metal-to-insulator transition in 1T-TaS$_{2}$

Authors: Giacomo Jarc, Shahla Yasmin Mathengattil, Angela Montanaro, Francesca Giusti, Enrico Maria Rigoni, Rudi Sergo, Francesca Fassioli, Stephan Winnerl, Simone Dal Zilio, Dragan Mihailovic, Peter Prelovšek, Martin Eckstein, Daniele Fausti

Abstract: Placing quantum materials into optical cavities provides a unique platform for controlling quantum cooperative properties of matter, via both weak and strong light-matter coupling. Here we report the experimental evidence of reversible cavity control of a metal-to-insulator phase transition in a correlated solid-state material. We embed the charge density wave material 1T-TaS$_{2}$ into cryogenic… ▽ More Placing quantum materials into optical cavities provides a unique platform for controlling quantum cooperative properties of matter, via both weak and strong light-matter coupling. Here we report the experimental evidence of reversible cavity control of a metal-to-insulator phase transition in a correlated solid-state material. We embed the charge density wave material 1T-TaS$_{2}$ into cryogenic tunable terahertz cavities and show that a switch between conductive and insulating behaviors, associated with a large change in the sample temperature, is obtained by mechanically tuning the distance between the cavity mirrors and their alignment. The large thermal modification observed is indicative of a Purcell-like scenario in which the spectral profile of the cavity modifies the energy exchange between the material and the external electromagnetic field. Our findings provide opportunities for controlling the thermodynamics and macroscopic transport properties of quantum materials by engineering their electromagnetic environment. △ Less

Submitted 20 October, 2023; v1 submitted 5 October, 2022; originally announced October 2022.

Comments: 52 pages, 36 figures (including Supplementary Information)

Journal ref: Nature 622, 487-492 (2023)

Effect of nonhydrostatic pressure on the superconducting kagome metal CsV$_3$Sb$_5$

Authors: Alexander A. Tsirlin, Brenden R. Ortiz, Martin Dressel, Stephen D. Wilson, Stephan Winnerl, Ece Uykur

Abstract: High-pressure single-crystal x-ray diffraction experiments reveal that the superconducting kagome metal CsV$_3$Sb$_5$ transforms from hexagonal ($P6/mmm$) to monoclinic ($C2/m$) symmetry above 10 GPa if nonhydrostatic pressure conditions are created in a diamond anvil cell with silicon oil as pressure-transmitting medium. This is contrary to the behavior of CsV$_3$Sb$_5$ under quasi-hydrostatic co… ▽ More High-pressure single-crystal x-ray diffraction experiments reveal that the superconducting kagome metal CsV$_3$Sb$_5$ transforms from hexagonal ($P6/mmm$) to monoclinic ($C2/m$) symmetry above 10 GPa if nonhydrostatic pressure conditions are created in a diamond anvil cell with silicon oil as pressure-transmitting medium. This is contrary to the behavior of CsV$_3$Sb$_5$ under quasi-hydrostatic conditions in neon, with the hexagonal symmetry retained up to at least 20 GPa. Monoclinic distortion leaves the kagome planes almost unchanged but deforms honeycomb nets of the Sb atoms. While the onset of the distortion almost coincides with the reentrance of superconductivity, our \textit{ab initio} density-functional calculations reveal only minor changes in the electronic structure compared to the quasi-hydrostatic case. In particular, Fermi surface reconstruction driven by the formation of interlayer Sb-Sb bonds is observed in both monoclinic and hexagonal CsV$_3$Sb$_5$ structures at high pressures and comes out as the likely cause for the reentrant behavior. △ Less

Submitted 11 May, 2023; v1 submitted 6 September, 2022; originally announced September 2022.

Comments: published version: 5 pages + Supplemental Material, 4 figures, 2 tables

Journal ref: Phys. Rev. B 107, 174107 (2023)

Ultra-Broadband Visible and Infrared Light Generation Driven by Far Infrared Light in the Broad Region from 8μm to 240μm

Authors: Nils W. Rosemann, Robin C. Döring, Eike Dornsiepen, Jürgen Belz, Johannes Haust, Felix Bernhardt, Ferdinand Ziese, Claudio Attaccalite, Stephan Winnerl, Harald Schneider, Manfred Helm, Stefanie Dehnen, Kerstin Volz, Simone Sanna, Sangam Chatterjee

Abstract: The most commonly used nonlinear optical process is the conversion of infrared light at 1064nm to green light at 532nm, as performed in common laser pointers. However, more relevant for future applications are nonlinear optical processes that generate a broad spectrum, a so called supercontinuum. A desirable goal is generating a spectrum that covers the whole visible range (400 -900nm), i.e., whit… ▽ More The most commonly used nonlinear optical process is the conversion of infrared light at 1064nm to green light at 532nm, as performed in common laser pointers. However, more relevant for future applications are nonlinear optical processes that generate a broad spectrum, a so called supercontinuum. A desirable goal is generating a spectrum that covers the whole visible range (400 -900nm), i.e., white light. Nowadays, white-light generation is usually achieved in specially designed photonic fibres requiring high laser intensities. However, in previous studies we showed that amorphous powders of $(PhSn)_4S_6$ cluster-molecules generate white light when they are irradiated by low-intensity near-infrared light. In this study, we use the mid- and far-infrared radiation of a free-electron laser to investigate the same molecules. White-light generation is observed for excitation with wavelength between 8 and 240$μ$ m. While the emitted radiation shows only slight variations, its intensity strongly depends on the excitation wavelength. We then match the wavelength dependent efficiency with the infrared absorption spectra of the material. This comparison shows: whenever the excitation can introduce molecular vibrations, less white light is generated. For all other wavelengths the excitation interacts mostly with the electron system. This shows that the electron system and the molecular backbone are decoupled to a large extent. Our work contributes to the understanding of the nonlinear process that underlies white-light generation in $(PhSn)_4S_6$ cluster molecules. Additionally, it shows the high potential of this material in applications where a broad laser spectrum is desired. △ Less

Submitted 29 April, 2022; originally announced April 2022.

Comments: 7 pages, 5 figures

Terahertz control of photoluminescence emission in few-layer InSe

Authors: Tommaso Venanzi, Malte Selig, Alexej Pashkin, Stephan Winnerl, Manuel Katzer, Himani Arora, Artur Erbe, Amalia Patanè, Zakhar R. Kudrynskyi, Zakhar D. Kovalyuk, Leonetta Baldassarre, Andreas Knorr, Manfred Helm, Harald Schneider

Abstract: A promising route for the development of opto-elelctronic technology is to use terahertz radiation to modulate the optical properties of semiconductors. Here we demonstrate the dynamical control of photoluminescence (PL) emission in few-layer InSe using picosecond terahertz pulses. We observe a strong PL quenching (up to 50%) after the arrival of the terahertz pulse followed by a reversible recove… ▽ More A promising route for the development of opto-elelctronic technology is to use terahertz radiation to modulate the optical properties of semiconductors. Here we demonstrate the dynamical control of photoluminescence (PL) emission in few-layer InSe using picosecond terahertz pulses. We observe a strong PL quenching (up to 50%) after the arrival of the terahertz pulse followed by a reversible recovery of the emission on the time scale of 50ps at T =10K. Microscopic calculations reveal that the origin of the photoluminescence quenching is the terahertz absorption by photo-excited carriers: this leads to a heating of the carriers and a broadening of their distribution, which reduces the probability of bimolecular electron-hole recombination and, therefore, the luminescence. By numerically evaluating the Boltzmann equation, we are able to clarify the individual roles of optical and acoustic phonons in the subsequent cooling process. The same PL quenchingmechanismis expected in other van derWaals semiconductors and the effectwill be particularly strong for materials with low carrier masses and long carrier relaxation time, which is the case for InSe. This work gives a solid background for the development of opto-electronic applications based on InSe, such as THz detectors and optical modulators. △ Less

Submitted 18 February, 2022; originally announced February 2022.

Comments: The following article has been accepted by Applied Physics Letters. After it is published, it will be found at https://publishing.aip.org/resources/librarians/products/journals/

Tunable cryogenic THz cavity for strong light-matter coupling in complex materials

Authors: Giacomo Jarc, Shahla Yasmin Mathengattil, Francesca Giusti, Maurizio Barnaba, Abhishek Singh, Angela Montanaro, Filippo Glerean, Enrico Maria Rigoni, Simone Dal Zilio, Stephan Winnerl, Daniele Fausti

Abstract: We report here the realization and commissioning of an experiment dedicated to the study of the optical properties of light matter hybrids constituted of crystalline samples embedded in an optical cavity. The experimental assembly developed offers the unique opportunity to study the weak and strong coupling regime between a tunable optical cavity in cryogenic environment and low energy degrees of… ▽ More We report here the realization and commissioning of an experiment dedicated to the study of the optical properties of light matter hybrids constituted of crystalline samples embedded in an optical cavity. The experimental assembly developed offers the unique opportunity to study the weak and strong coupling regime between a tunable optical cavity in cryogenic environment and low energy degrees of freedom such as phonons, magnons or charge fluctuations. We describe here the setup developed which allows the positioning of crystalline samples in an optical cavity of different quality factor, the tuning of the cavity length at cryogenic temperatures and its optical characterization with a broadband time domain THz spectrometer (0.2-6 THz). We demonstrate the versatility of the setup by studying the vibrational strong coupling in CuGeO3 single crystal at cryogenic temperatures. △ Less

Submitted 28 November, 2021; originally announced December 2021.

Pump-induced terahertz anisotropy in bilayer graphene

Authors: Angelika Seidl, Roozbeh Anvari, Marc M. Dignam, Peter Richter, Thomas Seyller, Harald Schneider, Manfred Helm, Stephan Winnerl

Abstract: We investigate the intraband nonlinear dynamics in doped bilayer graphene in the presence of strong, linearly-polarized, in-plane terahertz fields. We perform degenerate pump-probe experiments with 3.4 THz fields on doped bilayer graphene at low temperature (12 K) and find that when the pump is co-polarized with the probe beam, the differential pump-probe signal is almost double that found in the… ▽ More We investigate the intraband nonlinear dynamics in doped bilayer graphene in the presence of strong, linearly-polarized, in-plane terahertz fields. We perform degenerate pump-probe experiments with 3.4 THz fields on doped bilayer graphene at low temperature (12 K) and find that when the pump is co-polarized with the probe beam, the differential pump-probe signal is almost double that found in the cross-polarized case. We show that the origin of this pump-induced anisotropy is the difference in the average electron effective mass in the probe direction when carriers are displaced in k-space by the pump either parallel or perpendicular to the direction of the probe polarization. We model the system using both a simple semiclassical model and a Boltzmann equation simulation of the electron dynamics with phenomenological scattering and find good qualitative agreement with experimental results. △ Less

Submitted 20 January, 2022; v1 submitted 25 August, 2021; originally announced August 2021.

Photoluminescence dynamics in few-layer InSe

Authors: Tommaso Venanzi, Himani Arora, Stephan Winnerl, Alexej Pashkin, Phanish Chava, Amalia Patanè, Zakhar D. Kovalyuk, Zalhar R. Kudrynskyi, Kenji Watanabe, Takashi Taniguchi, Artur Erbe, Manfred Helm, Harald Schneider

Abstract: We study the optical properties of thin flakes of InSe encapsulated in hBN. More specifically, we investigate the photoluminescence (PL) emission and its dependence on sample thickness and temperature. Through the analysis of the PL lineshape, we discuss the relative weights of the exciton and electron-hole contributions. Thereafter we investigate the PL dynamics. Two contributions are distinguish… ▽ More We study the optical properties of thin flakes of InSe encapsulated in hBN. More specifically, we investigate the photoluminescence (PL) emission and its dependence on sample thickness and temperature. Through the analysis of the PL lineshape, we discuss the relative weights of the exciton and electron-hole contributions. Thereafter we investigate the PL dynamics. Two contributions are distinguishable at low temperature: direct bandgap electron-hole and defect-assisted recombination. The two recombination processes have lifetime of $τ_1 \sim 8\;$ns and $τ_2 \sim 100\;$ns, respectively. The relative weights of the direct bandgap and defect-assisted contributions show a strong layer dependence due to the direct-to-indirect bandgap crossover. Electron-hole PL lifetime is limited by population transfer to lower-energy states and no dependence on the number of layers was observed. The lifetime of the defect-assisted recombination gets longer for thinner samples. Finally, we show that the PL lifetime decreases at high temperatures as a consequence of more efficient non-radiative recombinations. △ Less

Submitted 31 March, 2020; v1 submitted 27 March, 2020; originally announced March 2020.

Comments: The manuscript will be published in the journal Physical Review Materials. Copyright 2011 by American Physical Society (https://journals.aps.org/prmaterials/)

Suppressed Auger scattering and tunable light emission of Landau-quantized massless Kane electrons

Authors: D. B. But, M. Mittendorff, C. Consejo, F. Teppe, N. N. Mikhailov, S. A. Dvoretskii, C. Faugeras, S. Winnerl, M. Helm, W. Knap, M. Potemski, M. Orlita

Abstract: The Landau level laser has been proposed a long time ago as a unique source of monochromatic radiation, widely tunable in the THz and infrared spectral ranges using an externally applied magnetic field. In spite of decades of efforts, this appealing concept never resulted in the design of a reliable device. This is due to efficient Auger scattering of Landau-quantized electrons, which is an intrin… ▽ More The Landau level laser has been proposed a long time ago as a unique source of monochromatic radiation, widely tunable in the THz and infrared spectral ranges using an externally applied magnetic field. In spite of decades of efforts, this appealing concept never resulted in the design of a reliable device. This is due to efficient Auger scattering of Landau-quantized electrons, which is an intrinsic non-radiative recombination channel that eventually gains over cyclotron emission in all materials studied so far: in conventional semiconductors with parabolic bands, but also in graphene with massless electrons. The Auger processes are favored in these systems by Landau levels (or their subsets) equally spaced in energy. Here we show that this scheme does not apply to massless Kane electrons in gapless HgCdTe alloy, in which undesirable Auger scattering is strongly suppressed and the sizeable cyclotron emission observed, for the first time in the case of massless particles. The gapless HgCdTe thus appears as a material of choice for future technology of Landau level lasers. △ Less

Submitted 21 July, 2020; v1 submitted 26 June, 2019; originally announced June 2019.

Comments: 11 pages, 7 figures including Supplementary materials

Journal ref: Nature Photonics 13, 783-787 (2019)

Up to 70 THz bandwidth from implanted Ge photoconductive antenna excited by a fibre laser

Authors: Abhishek Singh, Alexej Pashkin, Stephan Winnerl, Malte Welsch, Cornelius Beckh, Philipp Sulzer, Alfred Leitenstorfer, Manfred Helm, Harald Schneider

Abstract: Phase-stable electromagnetic pulses in the THz frequency range offer several unique capabilities in time-resolved spectroscopy. However, the diversity of their application is limited by the covered spectral bandwidth. In particular, the upper frequency limit of photoconductive emitters - the most widespread technique in THz spectroscopy - reaches only up to 7 THz in regular transmission mode due t… ▽ More Phase-stable electromagnetic pulses in the THz frequency range offer several unique capabilities in time-resolved spectroscopy. However, the diversity of their application is limited by the covered spectral bandwidth. In particular, the upper frequency limit of photoconductive emitters - the most widespread technique in THz spectroscopy - reaches only up to 7 THz in regular transmission mode due to the absorption by infrared-active optical phonons. Here, we present ultra-broadband (extending up to 70 THz) THz emission from Au implanted Ge emitter which is compatible with a fibre laser operating at 1.1 and 1.55 μm wavelengths at a repetition rates of 10 and 20 MHz, respectively. This opens a perspective for the development of compact THz photonic devices operating up to multi-THz frequencies and compatible with Si CMOS technology. △ Less

Submitted 9 March, 2020; v1 submitted 19 June, 2019; originally announced June 2019.

Journal ref: Light Sci Appl 9, 30 (2020)

Optical Control of Chiral Charge Pumping in a Topological Weyl Semimetal

Authors: M. Mehdi Jadidi, Mehdi Kargarian, Martin Mittendorff, Yigit Aytac, Bing Shen, Jacob C. König-Otto, Stephan Winnerl, Ni Ni, Alexander L. Gaeta, Thomas E. Murphy, H. Dennis Drew

Abstract: Solids with topologically robust electronic states exhibit unusual electronic and optical transport properties that do not exist in other materials. A particularly interesting example is chiral charge pumping, the so-called chiral anomaly, in recently discovered topological Weyl semimetals, where simultaneous application of parallel DC electric and magnetic fields creates an imbalance in the numbe… ▽ More Solids with topologically robust electronic states exhibit unusual electronic and optical transport properties that do not exist in other materials. A particularly interesting example is chiral charge pumping, the so-called chiral anomaly, in recently discovered topological Weyl semimetals, where simultaneous application of parallel DC electric and magnetic fields creates an imbalance in the number of carriers of opposite topological charge (chirality). Here, using time-resolved terahertz measurements on the Weyl semimetal TaAs in a magnetic field, we optically interrogate the chiral anomaly by dynamically pumping the chiral charges and monitoring their subsequent relaxation. Theory based on Boltzmann transport shows that the observed effects originate from an optical nonlinearity in the chiral charge pumping process. Our measurements reveal that the chiral population relaxation time is much greater than 1 ns. The observation of terahertz-controlled chiral carriers with long coherence times and topological protection suggests the application of Weyl semimetals for quantum optoelectronic technology. △ Less

Submitted 6 May, 2019; originally announced May 2019.

Journal ref: Phys. Rev. B 102, 245123 (2020)

Carrier dynamics in graphene: ultrafast many-particle phenomena

Authors: Ermin Malic, Torben Winzer, Florian Wendler, Samuel Brem, Roland Jago, Andreas Knorr, Martin Mittendorff, Jacob C. König-Otto, Tobias Plötzing, Daniel Neumaier, Harald Schneider, Manfred Helm, Stephan Winnerl

Abstract: Graphene is an ideal material to study fundamental Coulomb- and phonon-induced carrier scattering processes. Its remarkable gapless and linear band structure opens up new carrier relaxation channels. In particular, Auger scattering bridging the valence and the conduction band changes the number of charge carriers and gives rise to a significant carrier multiplication - an ultrafast many-particle p… ▽ More Graphene is an ideal material to study fundamental Coulomb- and phonon-induced carrier scattering processes. Its remarkable gapless and linear band structure opens up new carrier relaxation channels. In particular, Auger scattering bridging the valence and the conduction band changes the number of charge carriers and gives rise to a significant carrier multiplication - an ultrafast many-particle phenomenon that is promising for the design of highly efficient photodetectors. Furthermore, the vanishing density of states at the Dirac point combined with ultrafast phonon-induced intraband scattering results in an accumulation of carriers and a population inversion suggesting the design of graphene-based terahertz lasers. Here, we review our work on the ultrafast carrier dynamics in graphene and Landau-quantized graphene is presented providing a microscopic view on the appearance of carrier multiplication and population inversion. △ Less

Submitted 15 October, 2018; originally announced October 2018.

Comments: 17 pages, 10 figures

Slow noncollinear Coulomb scattering in the vicinity of the Dirac point in graphene

Authors: J. C. König-Otto, M. Mittendorff, T. Winzer, F. Kadi, E. Malic, A. Knorr, C. Berger, W. A. de Heer, A. Pashkin, H. Schneider, M. Helm, S. Winnerl

Abstract: The Coulomb scattering dynamics in graphene in energetic proximity to the Dirac point is investigated by polarization resolved pump-probe spectroscopy and microscopic theory. Collinear Coulomb scattering rapidly thermalizes the carrier distribution in k-directions pointing radially away from the Dirac point. Our study reveals, however, that in almost intrinsic graphene full thermalization in all d… ▽ More The Coulomb scattering dynamics in graphene in energetic proximity to the Dirac point is investigated by polarization resolved pump-probe spectroscopy and microscopic theory. Collinear Coulomb scattering rapidly thermalizes the carrier distribution in k-directions pointing radially away from the Dirac point. Our study reveals, however, that in almost intrinsic graphene full thermalization in all directions relying on noncollinear scattering is much slower. For low photon energies, carrier-optical-phonon processes are strongly suppressed and Coulomb mediated noncollinear scattering is remarkably slow, namely on a ps timescale. This effect is very promising for infrared and THz devices based on hot carrier effects. △ Less

Submitted 3 May, 2018; originally announced May 2018.

Symmetry-breaking supercollisions in Landau-quantized graphene

Authors: Florian Wendler, Martin Mittendorff, Jacob C. König-Otto, Samuel Brem, Claire Berger, Walter A. de Heer, Roman Böttger, Harald Schneider, Manfred Helm, Stephan Winnerl, Ermin Malic

Abstract: Recent pump-probe experiments performed on graphene in a perpendicular magnetic field have revealed carrier relaxation times ranging from picoseconds to nanoseconds depending on the quality of the sample. To explain this surprising behavior, we propose a novel symmetry-breaking defect-assisted relaxation channel. This enables scattering of electrons with single out-of-plane phonons, which drastica… ▽ More Recent pump-probe experiments performed on graphene in a perpendicular magnetic field have revealed carrier relaxation times ranging from picoseconds to nanoseconds depending on the quality of the sample. To explain this surprising behavior, we propose a novel symmetry-breaking defect-assisted relaxation channel. This enables scattering of electrons with single out-of-plane phonons, which drastically accelerate the carrier scattering time in low-quality samples. The gained insights provide a strategy for tuning the carrier relaxation time in graphene and related materials by orders of magnitude. △ Less

Submitted 25 January, 2018; originally announced January 2018.

Journal ref: Wendler, Florian, et al. "Symmetry-Breaking Supercollisions in Landau-Quantized Graphene." Physical review letters 119.6 (2017): 067405

Infrared nanoscopy down to liquid helium temperatures

Authors: D. Lang, J. Döring, T. Nörenberg, A. Butykai, I. Kézsmárki, H. Schneider, S. Winnerl, M. Helm, S. C. Kehr, L. M. Eng

Abstract: We introduce a scattering-type scanning near-field infrared microscope (s-SNIM) for the local scale near- field sample analysis and spectroscopy from room (RT) down to liquid helium (LHe) temperatures. The extension of s-SNIM down to T = 5K is in particular crucial for low-temperature phase transitions, e.g. for the examination of superconductors, as well as low energy excitations. The LT s-SNIM p… ▽ More We introduce a scattering-type scanning near-field infrared microscope (s-SNIM) for the local scale near- field sample analysis and spectroscopy from room (RT) down to liquid helium (LHe) temperatures. The extension of s-SNIM down to T = 5K is in particular crucial for low-temperature phase transitions, e.g. for the examination of superconductors, as well as low energy excitations. The LT s-SNIM performance is tested with CO2-IR excitation at T = 7K using a bare Au reference and a structured Si/SiO$_2$-sample. Furthermore, we quantify the impact of local laser heating under the s-SNIM tip apex by monitoring the light-induced ferroelectric-to-paraelectric phase transition of the skyrmion-hosting multiferroic material GaV4S8 at T$_c$ = 42K. We apply LT s-SNIM to study the spectral response of GaV$_4$S$_8$ and its lateral domain structure in the ferroelectric phase by the mid-IR to THz free-electron laser-light source FELBE at the Helmholtz-Zentrum Dresden-Rossendorf, Germany. Notably, our s-SNIM is based on a non-contact atomic force microscope(AFM), and thus can be complemented in-situ by various other AFM techniques, such as topography profiling, piezo-response force microscopy (PFM) and/or Kelvin-probe force microscopy (KPFM). The combination of these methods support the comprehensive study of the mutual interplay in the topographic, electronic and optical properties of surfaces from room temperature down to 5K. △ Less

Submitted 13 December, 2017; originally announced December 2017.

Infrared/Terahertz Spectra of the Photogalvanic Effect in (Bi,Sb)Te based Three Dimensional Topological Insulators

Authors: H. Plank, J. Pernul, S. Gebert, S. N. Danilov, J. König-Otto, S. Winnerl, M. Lanius, J. Kampmeier, G. Mussler, I. Aguilera, D. Grützmacher, S. D. Ganichev

Abstract: We report on the systematic study of infrared/terahertz spectra of photocurrents in (Bi,Sb)Te based three dimensional topological insulators. We demonstrate that in a wide range of frequencies, ranging from fractions up to tens of terahertz, the photocurrent is caused by the linear photogalvanic effect (LPGE) excited in the surface states. The photocurrent spectra reveal that at low frequencies th… ▽ More We report on the systematic study of infrared/terahertz spectra of photocurrents in (Bi,Sb)Te based three dimensional topological insulators. We demonstrate that in a wide range of frequencies, ranging from fractions up to tens of terahertz, the photocurrent is caused by the linear photogalvanic effect (LPGE) excited in the surface states. The photocurrent spectra reveal that at low frequencies the LPGE emerges due to free carrier Drude-like absorption. The spectra allow to determine the room temperature carrier mobilities in the surface states despite the presents of thermally activate residual impurities in the material bulk. In a number of samples we observed an enhancement of the linear photogalvanic effect at frequencies between 30÷60 THz, which is attributed to the excitation of electrons from helical surface to bulk conduction band states. Under this condition and applying oblique incidence we also observed the circular photogalvanic effect driven by the radiation helicity. △ Less

Submitted 30 November, 2017; originally announced November 2017.

Journal ref: Phys. Rev. Materials 2, 024202 (2018)

Doubly dressed bosons - exciton-polaritons in a strong terahertz field

Authors: B. Piętka, N. Bobrovska, D. Stephan, M. Teich, M. Król, S. Winnerl, A. Pashkin, R. Mirek, K. Lekenta, F. Morier-Genoud, H. Schneider, B. Deveaud, M. Helm, M. Matuszewski, J. Szczytko

Abstract: We demonstrate the existence of a novel quasiparticle: an exciton in a semiconductor doubly dressed with two photons of different wavelengths: near infrared cavity photon and terahertz (THz) photon, with the THz coupling strength approaching the ultra-strong coupling regime. This quasiparticle is composed of three different bosons, being a mixture of a matter-light quasiparticle. Our observations… ▽ More We demonstrate the existence of a novel quasiparticle: an exciton in a semiconductor doubly dressed with two photons of different wavelengths: near infrared cavity photon and terahertz (THz) photon, with the THz coupling strength approaching the ultra-strong coupling regime. This quasiparticle is composed of three different bosons, being a mixture of a matter-light quasiparticle. Our observations are confirmed by a detailed theoretical analysis, treating quantum mechanically all three bosonic fields. The doubly dressed quasiparticles retain the bosonic nature of their constituents, but their internal quantum structure strongly depends on the intensity of the applied terahertz field. △ Less

Submitted 21 April, 2017; originally announced April 2017.

Comments: 12 pages, 9 figures

Journal ref: Phys. Rev. Lett. 119, 077403 (2017)

Ultrabroadband single-cycle terahertz pulses with peak fields of 300 kV cm$^{-1}$ from a metallic spintronic emitter

Authors: T. Seifert, S. Jaiswal, M. Sajadi, G. Jakob, S. Winnerl, M. Wolf, M. Kläui, T. Kampfrath

Abstract: To explore the capabilities of metallic spintronic thin-film stacks as a source of intense and broadband terahertz electromagnetic fields, we excite a W/CoFeB/Pt trilayer on a large-area glass substrate (diameter of 7.5 cm) by a femtosecond laser pulse (energy 5.5 mJ, duration 40 fs, wavelength 800 nm). After focusing, the emitted terahertz pulse is measured to have a duration of 230 fs, a peak fi… ▽ More To explore the capabilities of metallic spintronic thin-film stacks as a source of intense and broadband terahertz electromagnetic fields, we excite a W/CoFeB/Pt trilayer on a large-area glass substrate (diameter of 7.5 cm) by a femtosecond laser pulse (energy 5.5 mJ, duration 40 fs, wavelength 800 nm). After focusing, the emitted terahertz pulse is measured to have a duration of 230 fs, a peak field of 300 kV cm$^{-1}$ and an energy of 5 nJ. In particular, the waveform exhibits a gapless spectrum extending from 1 to 10 THz at 10% of amplitude maximum, thereby facilitating nonlinear control over matter in this difficult-to-reach frequency range and on the sub-picosecond time scale. △ Less

Submitted 29 March, 2017; originally announced March 2017.

Comments: 7 pages, 4 figures

Journal ref: Applied Physics Letters, Volume 110, Issue 25, 2017

Unconventional double-bended saturation of optical transmission in graphene due to many-particle interactions

Authors: Torben Winzer, Martin Mittendorff, Stephan Winnerl, Manfred Helm, Ermin Malic, Andreas Knorr

Abstract: We present a joint theory-experiment study on the transmission/absorption saturation after ultrafast pulse excitation in graphene. We reveal an unconventional double-bended saturation behavior: Both bendings separately follow the standard saturation model exhibiting two saturation fluences, however, the corresponding fluences differ by three orders of magnitude and have different physical origin.… ▽ More We present a joint theory-experiment study on the transmission/absorption saturation after ultrafast pulse excitation in graphene. We reveal an unconventional double-bended saturation behavior: Both bendings separately follow the standard saturation model exhibiting two saturation fluences, however, the corresponding fluences differ by three orders of magnitude and have different physical origin. Our results reveal that this new and unexpected behavior can be ascribed to an interplay between fluence- and time-dependent many-particle scattering processes and phase-space filling effects. △ Less

Submitted 4 July, 2016; originally announced July 2016.

Terahertz Nonlinearity in Graphene Plasmons

Authors: Mohammad M. Jadidi, Jacob C. König-Otto, Stephan Winnerl, Andrei B. Sushkov, H. Dennis Drew, Thomas E. Murphy, Martin Mittendorff

Abstract: Sub-wavelength graphene structures support localized plasmonic resonances in the terahertz and mid-infrared spectral regimes. The strong field confinement at the resonant frequency is predicted to significantly enhance the light-graphene interaction, which could enable nonlinear optics at low intensity in atomically thin, sub-wavelength devices. To date, the nonlinear response of graphene plasmons… ▽ More Sub-wavelength graphene structures support localized plasmonic resonances in the terahertz and mid-infrared spectral regimes. The strong field confinement at the resonant frequency is predicted to significantly enhance the light-graphene interaction, which could enable nonlinear optics at low intensity in atomically thin, sub-wavelength devices. To date, the nonlinear response of graphene plasmons and their energy loss dynamics have not been experimentally studied. We measure and theoretically model the terahertz nonlinear response and energy relaxation dynamics of plasmons in graphene nanoribbons. We employ a THz pump-THz probe technique at the plasmon frequency and observe a strong saturation of plasmon absorption followed by a 10 ps relaxation time. The observed nonlinearity is enhanced by two orders of magnitude compared to unpatterned graphene with no plasmon resonance. We further present a thermal model for the nonlinear plasmonic absorption that supports the experimental results. △ Less

Submitted 23 December, 2015; originally announced December 2015.

Terahertz response of patterned epitaxial graphene

Authors: C. Sorger, S. Preu, J. Schmidt, S. Winnerl, Y. V. Bludov, N. M. R. Peres, M. I. Vasilevskiy, H. B. Weber

Abstract: We study the interaction between polarized terahertz (THz) radiation and micro-structured large-area graphene in transmission geometry. In order to efficiently couple the radiation into the two-dimensional material, a lateral periodic patterning of a closed graphene sheet by intercalation doping into stripes is chosen, yielding unequal transmittance of the radiation polarized parallel and perpendi… ▽ More We study the interaction between polarized terahertz (THz) radiation and micro-structured large-area graphene in transmission geometry. In order to efficiently couple the radiation into the two-dimensional material, a lateral periodic patterning of a closed graphene sheet by intercalation doping into stripes is chosen, yielding unequal transmittance of the radiation polarized parallel and perpendicular to the stripes. Indeed, a polarization contrast up to 20% is observed. The effect even increases up to 50% when removing graphene stripes in analogy to a wire grid polarizer. The polarization dependence is analyzed in a large frequency range from < 80 GHz to 3 THz, including the plasmon-polariton resonance. The results are in excellent agreement with theoretical calculations based on the electronic energy spectrum of graphene and the electrodynamics of the patterned structure. △ Less

Submitted 6 October, 2014; originally announced October 2014.

Journal ref: New Journal of Physics 15, 053045 (2015)

Anisotropy of excitation and relaxation of photogenerated Dirac electrons in graphene

Authors: Martin Mittendorff, Torben Winzer, Ermin Malic, Andreas Knorr, Claire Berger, Walter A. de Heer, Harald Schneider, Manfred Helm, Stephan Winnerl

Abstract: We investigate the polarization dependence of the carrier excitation and relaxation in epitaxial multilayer graphene. Degenerate pump-probe experiments with a temporal resolution of 30 fs are performed for different rotation angles of the pump-pulse polarization with respect to the polarization of the probe pulse. A pronounced dependence of the pump-induced transmission on this angle is found. It… ▽ More We investigate the polarization dependence of the carrier excitation and relaxation in epitaxial multilayer graphene. Degenerate pump-probe experiments with a temporal resolution of 30 fs are performed for different rotation angles of the pump-pulse polarization with respect to the polarization of the probe pulse. A pronounced dependence of the pump-induced transmission on this angle is found. It reflects a strong anisotropy of the pump-induced occupation of photogenerated carriers in momentum space even though the band structure is isotropic. Within 150 fs after excitation an isotropic carrier distribution is established. Our observations imply the predominant role of collinear scattering preserving the initially optically generated anisotropy in the carrier distribution. The experiments are well described by microscopic time-, momentum, and angle-resolved modelling, which allows us to unambiguously identify non-collinear carrier-phonon scattering to be the main relaxation mechanism giving rise to an isotropic distribution in the first hundred fs after optical excitation. △ Less

Submitted 20 December, 2013; originally announced December 2013.

Comments: Submitted to Nano Letters

Journal ref: Nano Lett., 2014, 14 (3)

Ultrafast graphene-based broadband THz detector

Authors: Martin Mittendorff, Stephan Winnerl, Josef Kamann, Jonathan Eroms, Dieter Weiss, Harald Schneider, Manfred Helm

Abstract: We present an ultrafast graphene-based detector, working in the THz range at room temperature. A logarithmic-periodic antenna is coupled to a graphene flake that is produced by exfoliation on SiO2. The detector was characterized with the free-electron laser FELBE for wavelengths from 8 um to 220 um. The detector rise time is 50 ps in the wavelength range from 30 um to 220 um. Autocorrelation measu… ▽ More We present an ultrafast graphene-based detector, working in the THz range at room temperature. A logarithmic-periodic antenna is coupled to a graphene flake that is produced by exfoliation on SiO2. The detector was characterized with the free-electron laser FELBE for wavelengths from 8 um to 220 um. The detector rise time is 50 ps in the wavelength range from 30 um to 220 um. Autocorrelation measurements exploiting the nonlinear photocurrent response at high intensities reveal an intrinsic response time below 10 ps. This detector has a high potential for characterizing temporal overlaps, e. g. in two-color pump-probe experiments. △ Less

Submitted 23 May, 2013; originally announced May 2013.

Journal ref: Appl. Phys. Lett. 103, 021113 (2013)

Ultra-fast transistor-based detectors for precise timing of near infrared and THz signals

Authors: S. Preu, M. Mittendorff, S. Winnerl, H. Lu, A. C. Gossard, H. B. Weber

Abstract: A whole class of two-color experiments involves intense, short Terahertz radiation pulses. A fast detector that is sensitive and able to resolve both near-infrared and Terahertz pulses at the same time is highly desirable. Here we present the first detector of this kind. The detector element is a GaAs-based field effect transistor operated at room temperature. THz detection is successfully demonst… ▽ More A whole class of two-color experiments involves intense, short Terahertz radiation pulses. A fast detector that is sensitive and able to resolve both near-infrared and Terahertz pulses at the same time is highly desirable. Here we present the first detector of this kind. The detector element is a GaAs-based field effect transistor operated at room temperature. THz detection is successfully demonstrated at frequencies up to 4.9 THz. The THz detection time constant is shorter than 30 ps, the optical time constant is 150 ps. This detector is ideally suited for precise, simultaneous resolution of optical and THz pulses and for pulse characterization of high-power THz pulses up to tens of kW peak power levels. The dynamic range of the detector was as large as 65 $\pm$ 3 dB/$\sqrt{Hz}$, enabling applications in a large variety of experiments and setups, also including table-top systems. △ Less

Submitted 19 March, 2013; originally announced March 2013.

Comments: 8 pages, 4 figures

Journal ref: Optics Express, Vol. 21, Issue 15, pp. 17941-17950 (2013)

Universal phase relation between longitudinal and transverse fields observed in focused terahertz beams

Authors: S. Winnerl, R. Hubrich, M. Mittendorff, H. Schneider, M. Helm

Abstract: We directly observe longitudinal electromagnetic fields in focused freely propagating terahertz beams of radial and linear polarization. In accordance with theory, the longitudinal fields are phase shifted by a value of pi/2 with respect to the transverse field components. This behavior is found for all frequency components of single cycle THz radiation pulses. Additionally we show that the longit… ▽ More We directly observe longitudinal electromagnetic fields in focused freely propagating terahertz beams of radial and linear polarization. In accordance with theory, the longitudinal fields are phase shifted by a value of pi/2 with respect to the transverse field components. This behavior is found for all frequency components of single cycle THz radiation pulses. Additionally we show that the longitudinal field of a radially polarized THz beam has a smaller spot size as compared to the transverse field of a linearly polarized beam, that is focused under the same conditions. △ Less

Submitted 22 August, 2012; originally announced August 2012.

Observation of Coulomb-Assisted Dipole-Forbidden Intraexciton Transitions in Semiconductors

Authors: W. D. Rice, J. Kono, S. Zybell, S. Winnerl, J. Bhattacharyya, H. Schneider, M. Helm, B. Ewers, A. Chernikov, M. Koch, S. Chatterjee, G. Khitrova, H. M. Gibbs, L. Schneebeli, B. Breddermann, M. Kira, S. W. Koch

Abstract: We use terahertz pulses to induce resonant transitions between the eigenstates of optically generated exciton populations in a high-quality semiconductor quantum-well sample. Monitoring the excitonic photoluminescence, we observe transient quenching of the $1s$ exciton emission, which we attribute to the terahertz-induced $1s$-to-$2p$ excitation. Simultaneously, a pronounced enhancement of the… ▽ More We use terahertz pulses to induce resonant transitions between the eigenstates of optically generated exciton populations in a high-quality semiconductor quantum-well sample. Monitoring the excitonic photoluminescence, we observe transient quenching of the $1s$ exciton emission, which we attribute to the terahertz-induced $1s$-to-$2p$ excitation. Simultaneously, a pronounced enhancement of the $2s$-exciton emission is observed, despite the $1s$-to-$2s$ transition being dipole forbidden. A microscopic many-body theory explains the experimental observations as a Coulomb-scattering mixing of the 2$s$ and 2$p$ states, yielding an effective terahertz transition between the 1$s$ and 2$s$ populations. △ Less

Submitted 5 December, 2012; v1 submitted 18 March, 2012; originally announced March 2012.

Comments: 5 pages, 3 figures

Journal ref: Physical Review Letters 110, 137404 (2013)

Carrier dynamics in epitaxial graphene close to the Dirac point

Authors: Stephan Winnerl, Milan Orlita, Paulina Plochocka, Piotr Kossacki, Marek Potemski, Torben Winzer, Ermin Malic, Andreas Knorr, Michael Sprinkle, Claire Berger, Walter A. de Heer, Harald Schneider, Manfred Helm

Abstract: We study the carrier dynamics in epitaxially grown graphene in the range of photon energies from 10 - 250 meV. The experiments complemented by microscopic modeling reveal that the carrier relaxation is significantly slowed down as the photon energy is tuned to values below the optical phonon frequency, however, owing to the presence of hot carriers, optical phonon emission is still the predominant… ▽ More We study the carrier dynamics in epitaxially grown graphene in the range of photon energies from 10 - 250 meV. The experiments complemented by microscopic modeling reveal that the carrier relaxation is significantly slowed down as the photon energy is tuned to values below the optical phonon frequency, however, owing to the presence of hot carriers, optical phonon emission is still the predominant relaxation process. For photon energies about twice the value of the Fermi energy, a transition from pump-induced transmission to pump-induced absorption occurs due to the interplay of interband and intraband processes. △ Less

Submitted 31 January, 2012; v1 submitted 12 May, 2011; originally announced May 2011.

Journal ref: Phys. Rev. Lett. 107, 237401 (2011)