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Improved Hopfield Network Optimization using Manufacturable Three-terminal Electronic Synapses
Authors:
Su-in Yi,
Suhas Kumar,
R. Stanley Williams
Abstract:
We describe via simulation novel optimization algorithms for a Hopfield neural network constructed using manufacturable three-terminal Silicon-Oxide-Nitride-Oxide-Silicon (SONOS) synaptic devices. We first present a computationally-light, memristor-based, highly accurate compact model for the SONOS. Using the compact model, we describe techniques of simulated annealing in Hopfield networks by expl…
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We describe via simulation novel optimization algorithms for a Hopfield neural network constructed using manufacturable three-terminal Silicon-Oxide-Nitride-Oxide-Silicon (SONOS) synaptic devices. We first present a computationally-light, memristor-based, highly accurate compact model for the SONOS. Using the compact model, we describe techniques of simulated annealing in Hopfield networks by exploiting imperfect problem definitions, current leakage, and the continuous tunability of the SONOS to enable transient chaotic group dynamics. We project improvements in energy consumption and latency for optimization relative to the best CPUs and GPUs by at least 4 orders of magnitude, and also exceeding the best projected memristor-based hardware; along with a 100-fold increase in error-resilient hardware size (i.e., problem size).
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Submitted 25 April, 2021;
originally announced April 2021.
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Size scaling, dynamics, and electro-thermal bifurcation of VO2 Mott oscillators
Authors:
Stephanie M. Bohaichuk,
Suhas Kumar,
Miguel Muñoz Rojo,
R. Stanley Williams,
Mahnaz Islam,
Gregory Pitner,
Jaewoo Jeong,
Mahesh G. Samant,
Stuart S. P. Parkin,
Eric Pop
Abstract:
Traditional electronic devices are well-known to improve in speed and energy-efficiency as their dimensions are reduced to the nanoscale. However, this scaling behavior remains unclear for nonlinear dynamical circuit elements, such as Mott neuron-like spiking oscillators, which are of interest for bio-inspired computing. Here we show that shrinking micrometer-sized VO2 oscillators to sub-100 nm ef…
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Traditional electronic devices are well-known to improve in speed and energy-efficiency as their dimensions are reduced to the nanoscale. However, this scaling behavior remains unclear for nonlinear dynamical circuit elements, such as Mott neuron-like spiking oscillators, which are of interest for bio-inspired computing. Here we show that shrinking micrometer-sized VO2 oscillators to sub-100 nm effective sizes, achieved using a nanogap cut in a metallic carbon nanotube (CNT) electrode, does not guarantee faster spiking. However, an additional heat source such as Joule heating from the CNT, in combination with small size and heat capacity (defined by the narrow volume of VO2 whose insulator-metal transition is triggered by the CNT), can increase the spiking frequency by ~1000x due to an electro-thermal bifurcation in the nonlinear dynamics. These results demonstrate that nonlinear dynamical switches operate in a complex phase space which can be controlled by careful electro-thermal design, offering new tuning parameters for designing future biomimetic electronics.
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Submitted 14 December, 2020;
originally announced December 2020.
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Thermodynamic Computing
Authors:
Tom Conte,
Erik DeBenedictis,
Natesh Ganesh,
Todd Hylton,
John Paul Strachan,
R. Stanley Williams,
Alexander Alemi,
Lee Altenberg,
Gavin Crooks,
James Crutchfield,
Lidia del Rio,
Josh Deutsch,
Michael DeWeese,
Khari Douglas,
Massimiliano Esposito,
Michael Frank,
Robert Fry,
Peter Harsha,
Mark Hill,
Christopher Kello,
Jeff Krichmar,
Suhas Kumar,
Shih-Chii Liu,
Seth Lloyd,
Matteo Marsili
, et al. (14 additional authors not shown)
Abstract:
The hardware and software foundations laid in the first half of the 20th Century enabled the computing technologies that have transformed the world, but these foundations are now under siege. The current computing paradigm, which is the foundation of much of the current standards of living that we now enjoy, faces fundamental limitations that are evident from several perspectives. In terms of hard…
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The hardware and software foundations laid in the first half of the 20th Century enabled the computing technologies that have transformed the world, but these foundations are now under siege. The current computing paradigm, which is the foundation of much of the current standards of living that we now enjoy, faces fundamental limitations that are evident from several perspectives. In terms of hardware, devices have become so small that we are struggling to eliminate the effects of thermodynamic fluctuations, which are unavoidable at the nanometer scale. In terms of software, our ability to imagine and program effective computational abstractions and implementations are clearly challenged in complex domains. In terms of systems, currently five percent of the power generated in the US is used to run computing systems - this astonishing figure is neither ecologically sustainable nor economically scalable. Economically, the cost of building next-generation semiconductor fabrication plants has soared past $10 billion. All of these difficulties - device scaling, software complexity, adaptability, energy consumption, and fabrication economics - indicate that the current computing paradigm has matured and that continued improvements along this path will be limited. If technological progress is to continue and corresponding social and economic benefits are to continue to accrue, computing must become much more capable, energy efficient, and affordable. We propose that progress in computing can continue under a united, physically grounded, computational paradigm centered on thermodynamics. Herein we propose a research agenda to extend these thermodynamic foundations into complex, non-equilibrium, self-organizing systems and apply them holistically to future computing systems that will harness nature's innate computational capacity. We call this type of computing "Thermodynamic Computing" or TC.
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Submitted 14 November, 2019; v1 submitted 5 November, 2019;
originally announced November 2019.
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Fast Spiking of a Mott VO2-Carbon Nanotube Composite Device
Authors:
Stephanie M. Bohaichuk,
Suhas Kumar,
Greg Pitner,
Connor J. McClellan,
Jaewoo Jeong,
Mahesh G. Samant,
H-. S. Philip Wong,
Stuart S. P. Parkin,
R. Stanley Williams,
Eric Pop
Abstract:
The recent surge of interest in brain-inspired computing and power-efficient electronics has dramatically bolstered development of computation and communication using neuron-like spiking signals. Devices that can produce rapid and energy-efficient spiking could significantly advance these applications. Here we demonstrate DC-current or voltage-driven periodic spiking with sub-20 ns pulse widths fr…
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The recent surge of interest in brain-inspired computing and power-efficient electronics has dramatically bolstered development of computation and communication using neuron-like spiking signals. Devices that can produce rapid and energy-efficient spiking could significantly advance these applications. Here we demonstrate DC-current or voltage-driven periodic spiking with sub-20 ns pulse widths from a single device composed of a thin VO2 film with a metallic carbon nanotube as a nanoscale heater. Compared with VO2-only devices, adding the nanotube heater dramatically decreases the transient duration and pulse energy, and increases the spiking frequency, by up to three orders of magnitude. This is caused by heating and cooling of the VO2 across its insulator-metal transition being localized to a nanoscale conduction channel in an otherwise bulk medium. This result provides an important component of energy-efficient neuromorphic computing systems, and a lithography-free technique for power-scaling of electronic devices that operate via bulk mechanisms.
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Submitted 7 March, 2019;
originally announced March 2019.
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PUMA: A Programmable Ultra-efficient Memristor-based Accelerator for Machine Learning Inference
Authors:
Aayush Ankit,
Izzat El Hajj,
Sai Rahul Chalamalasetti,
Geoffrey Ndu,
Martin Foltin,
R. Stanley Williams,
Paolo Faraboschi,
Wen-mei Hwu,
John Paul Strachan,
Kaushik Roy,
Dejan S Milojicic
Abstract:
Memristor crossbars are circuits capable of performing analog matrix-vector multiplications, overcoming the fundamental energy efficiency limitations of digital logic. They have been shown to be effective in special-purpose accelerators for a limited set of neural network applications.
We present the Programmable Ultra-efficient Memristor-based Accelerator (PUMA) which enhances memristor crossba…
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Memristor crossbars are circuits capable of performing analog matrix-vector multiplications, overcoming the fundamental energy efficiency limitations of digital logic. They have been shown to be effective in special-purpose accelerators for a limited set of neural network applications.
We present the Programmable Ultra-efficient Memristor-based Accelerator (PUMA) which enhances memristor crossbars with general purpose execution units to enable the acceleration of a wide variety of Machine Learning (ML) inference workloads. PUMA's microarchitecture techniques exposed through a specialized Instruction Set Architecture (ISA) retain the efficiency of in-memory computing and analog circuitry, without compromising programmability.
We also present the PUMA compiler which translates high-level code to PUMA ISA. The compiler partitions the computational graph and optimizes instruction scheduling and register allocation to generate code for large and complex workloads to run on thousands of spatial cores.
We have developed a detailed architecture simulator that incorporates the functionality, timing, and power models of PUMA's components to evaluate performance and energy consumption. A PUMA accelerator running at 1 GHz can reach area and power efficiency of $577~GOPS/s/mm^2$ and $837~GOPS/s/W$, respectively. Our evaluation of diverse ML applications from image recognition, machine translation, and language modelling (5M-800M synapses) shows that PUMA achieves up to $2,446\times$ energy and $66\times$ latency improvement for inference compared to state-of-the-art GPUs. Compared to an application-specific memristor-based accelerator, PUMA incurs small energy overheads at similar inference latency and added programmability.
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Submitted 29 January, 2019; v1 submitted 29 January, 2019;
originally announced January 2019.
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Long short-term memory networks in memristor crossbars
Authors:
Can Li,
Zhongrui Wang,
Mingyi Rao,
Daniel Belkin,
Wenhao Song,
Hao Jiang,
Peng Yan,
Yunning Li,
Peng Lin,
Miao Hu,
Ning Ge,
John Paul Strachan,
Mark Barnell,
Qing Wu,
R. Stanley Williams,
J. Joshua Yang,
Qiangfei Xia
Abstract:
Recent breakthroughs in recurrent deep neural networks with long short-term memory (LSTM) units has led to major advances in artificial intelligence. State-of-the-art LSTM models with significantly increased complexity and a large number of parameters, however, have a bottleneck in computing power resulting from limited memory capacity and data communication bandwidth. Here we demonstrate experime…
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Recent breakthroughs in recurrent deep neural networks with long short-term memory (LSTM) units has led to major advances in artificial intelligence. State-of-the-art LSTM models with significantly increased complexity and a large number of parameters, however, have a bottleneck in computing power resulting from limited memory capacity and data communication bandwidth. Here we demonstrate experimentally that LSTM can be implemented with a memristor crossbar, which has a small circuit footprint to store a large number of parameters and in-memory computing capability that circumvents the 'von Neumann bottleneck'. We illustrate the capability of our system by solving real-world problems in regression and classification, which shows that memristor LSTM is a promising low-power and low-latency hardware platform for edge inference.
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Submitted 30 May, 2018;
originally announced May 2018.
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Challenges to Keeping the Computer Industry Centered in the US
Authors:
Thomas M. Conte,
Erik P. Debenedictis,
R. Stanley Williams,
Mark D. Hill
Abstract:
It is undeniable that the worldwide computer industry's center is the US, specifically in Silicon Valley. Much of the reason for the success of Silicon Valley had to do with Moore's Law: the observation by Intel co-founder Gordon Moore that the number of transistors on a microchip doubled at a rate of approximately every two years. According to the International Technology Roadmap for Semiconducto…
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It is undeniable that the worldwide computer industry's center is the US, specifically in Silicon Valley. Much of the reason for the success of Silicon Valley had to do with Moore's Law: the observation by Intel co-founder Gordon Moore that the number of transistors on a microchip doubled at a rate of approximately every two years. According to the International Technology Roadmap for Semiconductors, Moore's Law will end in 2021. How can we rethink computing technology to restart the historic explosive performance growth? Since 2012, the IEEE Rebooting Computing Initiative (IEEE RCI) has been working with industry and the US government to find new computing approaches to answer this question. In parallel, the CCC has held a number of workshops addressing similar questions. This whitepaper summarizes some of the IEEE RCI and CCC findings. The challenge for the US is to lead this new era of computing. Our international competitors are not sitting still: China has invested significantly in a variety of approaches such as neuromorphic computing, chip fabrication facilities, computer architecture, and high-performance simulation and data analytics computing, for example. We must act now, otherwise, the center of the computer industry will move from Silicon Valley and likely move off shore entirely.
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Submitted 30 June, 2017;
originally announced June 2017.
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Oxygen migration during resistance switching and failure of hafnium oxide memristors
Authors:
Suhas Kumar,
Ziwen Wang,
Xiaopeng Huang,
Niru Kumari,
Noraica Davila,
John Paul Strachan,
David Vine,
A. L. David Kilcoyne,
Yoshio Nishi,
R. Stanley Williams
Abstract:
While the recent establishment of the role of thermophoresis/diffusion-driven oxygen migration during resistance switching in metal oxide memristors provided critical insights required for memristor modeling, extended investigations of the role of oxygen migration during ageing and failure remain to be detailed. Such detailing will enable failure-tolerant design, which can lead to enhanced perform…
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While the recent establishment of the role of thermophoresis/diffusion-driven oxygen migration during resistance switching in metal oxide memristors provided critical insights required for memristor modeling, extended investigations of the role of oxygen migration during ageing and failure remain to be detailed. Such detailing will enable failure-tolerant design, which can lead to enhanced performance of memristor-based next-generation storage-class memory. Here we directly observed lateral oxygen migration using in-situ synchrotron x-ray absorption spectromicroscopy of HfOx memristors during initial resistance switching, wear over millions of switching cycles, and eventual failure, through which we determined potential physical causes of failure. Using this information, we reengineered devices to mitigate three failure mechanisms, and demonstrated an improvement in endurance of about three orders of magnitude.
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Submitted 8 March, 2017;
originally announced March 2017.
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Spatially uniform resistance switching of low current, high endurance titanium-niobium-oxide memristors
Authors:
Suhas Kumar,
Noraica Davila,
Ziwen Wang,
Xiaopeng Huang,
John Paul Strachan,
David Vine,
A. L. David Kilcoyne,
Yoshio Nishi,
R. Stanley Williams
Abstract:
We analyzed micrometer-scale titanium-niobium-oxide prototype memristors, which exhibited low write-power (<3 μW) and energy (<200 fJ/bit/μm2), low read-power (~nW), and high endurance (>millions of cycles). To understand their physico-chemical operating mechanisms, we performed in-operando synchrotron x-ray transmission nanoscale spectromicroscopy using an ultra-sensitive time-multiplexed techniq…
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We analyzed micrometer-scale titanium-niobium-oxide prototype memristors, which exhibited low write-power (<3 μW) and energy (<200 fJ/bit/μm2), low read-power (~nW), and high endurance (>millions of cycles). To understand their physico-chemical operating mechanisms, we performed in-operando synchrotron x-ray transmission nanoscale spectromicroscopy using an ultra-sensitive time-multiplexed technique. We observed only spatially uniform material changes during cell operation, in sharp contrast to the frequently detected formation of a localized conduction channel in transition-metal-oxide memristors. We also associated the response of assigned spectral features distinctly to non-volatile storage (resistance change) and writing of information (application of voltage and Joule heating). These results provide critical insights into high-performance memristors that will aid in device design, scaling and predictive circuit-modeling, all of which are essential for the widespread deployment of successful memristor applications.
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Submitted 6 January, 2017;
originally announced January 2017.
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Conduction Channel Formation and Dissolution Due to Oxygen Thermophoresis/Diffusion in Hafnium Oxide Memristors
Authors:
Suhas Kumar,
Ziwen Wang,
Xiaopeng Huang,
Niru Kumari,
Noraica Davila,
John Paul Strachan,
David Vine,
A. L. David Kilcoyne,
Yoshio Nishi,
R. Stanley Williams
Abstract:
Transition metal oxide memristors, or resistive random-access memory (RRAM) switches, are under intense development for storage-class memory because of their favorable operating power, endurance, speed, and density. Their commercial deployment critically depends on predictive compact models based on understanding nanoscale physico-chemical forces, which remains elusive and controversial owing to t…
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Transition metal oxide memristors, or resistive random-access memory (RRAM) switches, are under intense development for storage-class memory because of their favorable operating power, endurance, speed, and density. Their commercial deployment critically depends on predictive compact models based on understanding nanoscale physico-chemical forces, which remains elusive and controversial owing to the difficulties in directly observing atomic motions during resistive switching, Here, using scanning transmission synchrotron x-ray spectromicroscopy to study in-situ switching of hafnium oxide memristors, we directly observed the formation of a localized oxygen-deficiency-derived conductive channel surrounded by a low-conductivity ring of excess oxygen. Subsequent thermal annealing homogenized the segregated oxygen, resetting the cells towards their as-grown resistance state. We show that the formation and dissolution of the conduction channel are successfully modeled by radial thermophoresis and Fick diffusion of oxygen atoms driven by Joule heating. This confirmation and quantification of two opposing nanoscale radial forces that affect bipolar memristor switching are important components for any future physics-based compact model for the electronic switching of these devices.
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Submitted 3 January, 2017;
originally announced January 2017.
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Direct Observation of Localized Radial Oxygen Migration in Functioning Tantalum Oxide Memristors
Authors:
Suhas Kumar,
Catherine E. Graves,
John Paul Strachan,
Emmanuelle Merced Grafals,
Arthur L. David Kilcoyne,
Tolek Tyliszczak,
Johanna Nelson Weker,
Yoshio Nishi,
R. Stanley Williams
Abstract:
Oxygen migration in tantalum oxide, a promising next-generation storage material, is studied using in-operando x-ray absorption spectromicroscopy and is used to microphysically describe accelerated evolution of conduction channel and device failure. The resulting ring-like patterns of oxygen concentration are modeled using thermophoretic forces and Fick diffusion, establishing the critical role of…
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Oxygen migration in tantalum oxide, a promising next-generation storage material, is studied using in-operando x-ray absorption spectromicroscopy and is used to microphysically describe accelerated evolution of conduction channel and device failure. The resulting ring-like patterns of oxygen concentration are modeled using thermophoretic forces and Fick diffusion, establishing the critical role of temperature-activated oxygen migration that has been under question lately.
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Submitted 4 February, 2016; v1 submitted 3 February, 2016;
originally announced February 2016.
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The phase transition in VO2 probed using x-ray, visible and infrared radiations
Authors:
Suhas Kumar,
John Paul Strachan,
A. L. David Kilcoyne,
Tolek Tyliszczak,
Matthew D. Pickett,
Charles Santori,
Gary Gibson,
R. Stanley Williams
Abstract:
Vanadium dioxide (VO2) is a model system that has been used to understand closely-occurring multiband electronic (Mott) and structural (Peierls) transitions for over half a century due to continued scientific and technological interests. Among the many techniques used to study VO2, the most frequently used involve electromagnetic radiation as a probe. Understanding of the distinct physical informa…
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Vanadium dioxide (VO2) is a model system that has been used to understand closely-occurring multiband electronic (Mott) and structural (Peierls) transitions for over half a century due to continued scientific and technological interests. Among the many techniques used to study VO2, the most frequently used involve electromagnetic radiation as a probe. Understanding of the distinct physical information provided by different probing radiations is incomplete, mostly owing to the complicated nature of the phase transitions. Here we use transmission of spatially averaged infrared (λ=1500 nm) and visible (λ=500 nm) radiations followed by spectroscopy and nanoscale imaging using x-rays (λ=2.25-2.38 nm) to probe the same VO2 sample while controlling the ambient temperature across its hysteretic phase transitions and monitoring its electrical resistance. We directly observed nanoscale puddles of distinct electronic and structural compositions during the transition. The two main results are that, during both heating and cooling, the transition of infrared and visible transmission occur at significantly lower temperatures than the Mott transition; and the electronic (Mott) transition occurs before the structural (Peierls) transition in temperature. We use our data to provide insights into possible microphysical origins of the different transition characteristics. We highlight that it is important to understand these effects because small changes in the nature of the probe can yield quantitatively, and even qualitatively, different results when applied to a non-trivial multiband phase transition. Our results guide more judicious use of probe type and interpretation of the resulting data.
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Submitted 19 February, 2016; v1 submitted 30 December, 2015;
originally announced December 2015.
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Sequential Electronic and Structural Transitions in VO2 Observed Using X-ray Absorption Spectromicroscopy
Authors:
Suhas Kumar,
John Paul Strachan,
Matthew D. Pickett,
Alexander Bratkovsky,
Yoshio Nishi,
R. Stanley Williams
Abstract:
The popular dual electronic (Mott) and structural (Peierls) transitions in VO2 are explored using x-ray absorption spectromicroscopy with high spatial and spectral resolutions. It is found that during both heating and cooling, the electronic transition always precedes the structural Peierls transition. Between the two transitions, there are intermediate states that are spectrally isolated here.
The popular dual electronic (Mott) and structural (Peierls) transitions in VO2 are explored using x-ray absorption spectromicroscopy with high spatial and spectral resolutions. It is found that during both heating and cooling, the electronic transition always precedes the structural Peierls transition. Between the two transitions, there are intermediate states that are spectrally isolated here.
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Submitted 19 November, 2015; v1 submitted 5 November, 2015;
originally announced November 2015.
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Local Temperature Redistribution and Structural Transition During Joule-Heating-Driven Conductance Switching in VO2
Authors:
Suhas Kumar,
Matthew D. Pickett,
John Paul Strachan,
Gary Gibson,
Yoshio Nishi,
R. Stanley Williams
Abstract:
Joule-heating induced conductance-switching is studied in VO2, a Mott insulator. Complementary in-situ techniques including optical characterization, blackbody microscopy, scanning transmission x-ray microscopy (STXM) and numerical simulations are used. Abrupt redistribution in local temperature is shown to occur upon conductance-switching along with a structural phase transition, at the same curr…
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Joule-heating induced conductance-switching is studied in VO2, a Mott insulator. Complementary in-situ techniques including optical characterization, blackbody microscopy, scanning transmission x-ray microscopy (STXM) and numerical simulations are used. Abrupt redistribution in local temperature is shown to occur upon conductance-switching along with a structural phase transition, at the same current.
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Submitted 22 October, 2015;
originally announced October 2015.
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In-operando synchronous time-multiplexed O K-edge x-ray absorption spectromicroscopy of functioning tantalum oxide memristors
Authors:
Suhas Kumar,
Catherine E. Graves,
John Paul Strachan,
A. L. David Kilcoyne,
Tolek Tyliszczak,
Yoshio Nishi,
R. Stanley Williams
Abstract:
Memristors are receiving keen interest because of their potential varied applications and promising large-scale information storage capabilities. Tantalum oxide is a memristive material that has shown promise for high-performance nonvolatile computer memory. The microphysics has been elusive because of the small scale and subtle physical changes that accompany conductance switching. In this study,…
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Memristors are receiving keen interest because of their potential varied applications and promising large-scale information storage capabilities. Tantalum oxide is a memristive material that has shown promise for high-performance nonvolatile computer memory. The microphysics has been elusive because of the small scale and subtle physical changes that accompany conductance switching. In this study, we probed the atomic composition, local chemistry and electronic structure of functioning tantalum oxide memristors through spatially mapped O K-edge x-ray absorption. We developed a time-multiplexed spectromicroscopy technique to enhance the weak and possibly localized oxide modifications with spatial and spectral resolutions of <30 nm and 70 meV, respectively. During the initial stages of conductance switching of a micrometer sized crosspoint device, the spectral changes were uniform within the spatial resolution of our technique. When the device was further driven with millions of high voltage-pulse cycles, we observed lateral motion and separation of ~100 nm-scale agglomerates of both oxygen interstitials and vacancies. We also demonstrate a unique capability of this technique by identifying the relaxation behavior in the material during electrical stimuli by identifying electric field driven changes with varying pulse widths. In addition, we show that changes to the material can be localized to a spatial region by modifying its topography or uniformity, as against spatially uniform changes observed here during memristive switching. The goal of this report is to introduce the capability of time-multiplexed x-ray spectromicroscopy in studying weak-signal transitions in inhomogeneous media through the example of the operation and temporal evolution of a memristor.
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Submitted 16 October, 2015;
originally announced October 2015.
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Experimental Observations of Group Synchrony in a System of Chaotic Optoelectronic Oscillators
Authors:
Caitlin R. S. Williams,
Thomas E. Murphy,
Rajarshi Roy,
Francesco Sorrentino,
Thomas Dahms,
Eckehard Schöll
Abstract:
We experimentally demonstrate group synchrony in a network of four nonlinear optoelectronic oscillators with time-delayed coupling. We divide the nodes into two groups of two each, by giving each group different parameters and by enabling only inter-group coupling. When coupled in this fashion, the two groups display different dynamics, with no isochronal synchrony between them, but the nodes in a…
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We experimentally demonstrate group synchrony in a network of four nonlinear optoelectronic oscillators with time-delayed coupling. We divide the nodes into two groups of two each, by giving each group different parameters and by enabling only inter-group coupling. When coupled in this fashion, the two groups display different dynamics, with no isochronal synchrony between them, but the nodes in a single group are isochronally synchronized, even though there is no intra-group coupling. We compare experimental behavior with theoretical and numerical results.
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Submitted 27 March, 2013; v1 submitted 16 January, 2013;
originally announced January 2013.
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Current-Controlled Negative Differential Resistance due to Joule Heating in TiO2
Authors:
A. S. Alexandrov,
A. M. Bratkovsky,
B. Bridle,
S. E. Savel'ev,
D. B. Strukov,
R. Stanley Williams
Abstract:
We show that Joule heating causes current-controlled negative differential resistance (CC-NDR) in TiO2 by constructing an analytical model of the voltage-current V(I) characteristic based on polaronic transport for Ohm's Law and Newton's Law of Cooling, and fitting this model to experimental data. This threshold switching is the 'soft breakdown' observed during electroforming of TiO2 and other tra…
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We show that Joule heating causes current-controlled negative differential resistance (CC-NDR) in TiO2 by constructing an analytical model of the voltage-current V(I) characteristic based on polaronic transport for Ohm's Law and Newton's Law of Cooling, and fitting this model to experimental data. This threshold switching is the 'soft breakdown' observed during electroforming of TiO2 and other transition-metal-oxide based memristors, as well as a precursor to 'ON' or 'SET' switching of unipolar memristors from their high to their low resistance states. The shape of the V(I) curve is a sensitive indicator of the nature of the polaronic conduction.
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Submitted 15 August, 2011;
originally announced August 2011.
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Molecular dynamics simulations of oxide memristors: crystal field effects
Authors:
S. E. Savel'ev,
A. S. Alexandrov,
A. M. Bratkovsky,
R. Stanley Williams
Abstract:
We present molecular-dynamic simulations of memory resistors (memristors) including the crystal field effects on mobile ionic species such as oxygen vacancies appearing during operation of the device. Vacancy distributions show different patterns depending on the ratio of a spatial period of the crystal field to a characteristic radius of the vacancy-vacancy interaction. There are signatures of th…
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We present molecular-dynamic simulations of memory resistors (memristors) including the crystal field effects on mobile ionic species such as oxygen vacancies appearing during operation of the device. Vacancy distributions show different patterns depending on the ratio of a spatial period of the crystal field to a characteristic radius of the vacancy-vacancy interaction. There are signatures of the orientational order and of spatial voids in the vacancy distributions for some crystal field potentials. The crystal field stabilizes the patterns after they are formed, resulting in a non-volatile switching of the simulated devices.
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Submitted 23 May, 2011;
originally announced May 2011.
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Molecular dynamics simulations of oxide memristors: thermal effects
Authors:
S. E. Savel'ev,
A. S. Alexandrov,
A. M. Bratkovsky,
R. Stanley Williams
Abstract:
We have extended our recent molecular-dynamic simulations of memristors to include the effect of thermal inhomogeneities on mobile ionic species appearing during operation of the device. Simulations show a competition between an attractive short-ranged interaction between oxygen vacancies and an enhanced local temperature in creating/destroying the conducting oxygen channels. Such a competition wo…
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We have extended our recent molecular-dynamic simulations of memristors to include the effect of thermal inhomogeneities on mobile ionic species appearing during operation of the device. Simulations show a competition between an attractive short-ranged interaction between oxygen vacancies and an enhanced local temperature in creating/destroying the conducting oxygen channels. Such a competition would strongly affect the performance of the memristive devices.
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Submitted 26 December, 2010;
originally announced December 2010.
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Molecular dynamics simulations of oxide memory resistors (memristors)
Authors:
S. E. Savel'ev,
A. S. Alexandrov,
A. M. Bratkovsky,
R. Stanley Williams
Abstract:
Reversible bipolar nano-switches that can be set and read electronically in a solid-state two-terminal device are very promising for applications. We have performed molecular-dynamics simulations that mimic systems with oxygen vacancies interacting via realistic potentials and driven by an external bias voltage. The competing short- and long-range interactions among charged mobile vacancies lead t…
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Reversible bipolar nano-switches that can be set and read electronically in a solid-state two-terminal device are very promising for applications. We have performed molecular-dynamics simulations that mimic systems with oxygen vacancies interacting via realistic potentials and driven by an external bias voltage. The competing short- and long-range interactions among charged mobile vacancies lead to density fluctuations and short-range ordering, while illustrating some aspects of observed experimental behavior, such as memristor polarity inversion.
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Submitted 27 October, 2010;
originally announced October 2010.
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Complex Dynamics and Synchronization of Delayed-Feedback Nonlinear Oscillators
Authors:
Thomas E. Murphy,
Adam B. Cohen,
Bhargava Ravoori,
Karl R. B. Schmitt,
Anurag V. Setty,
Francesco Sorrentino,
Caitlin R. S. Williams,
Edward Ott,
Rajarshi Roy
Abstract:
We describe a flexible and modular delayed-feedback nonlinear oscillator that is capable of generating a wide range of dynamical behaviours, from periodic oscillations to high-dimensional chaos. The oscillator uses electrooptic modulation and fibre-optic transmission, with feedback and filtering implemented through real-time digital-signal processing. We consider two such oscillators that are co…
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We describe a flexible and modular delayed-feedback nonlinear oscillator that is capable of generating a wide range of dynamical behaviours, from periodic oscillations to high-dimensional chaos. The oscillator uses electrooptic modulation and fibre-optic transmission, with feedback and filtering implemented through real-time digital-signal processing. We consider two such oscillators that are coupled to one another, and we identify the conditions under which they will synchronize. By examining the rates of divergence or convergence between two coupled oscillators, we quantify the maximum Lyapunov exponents or transverse Lyapunov exponents of the system, and we present an experimental method to determine these rates that does not require a mathematical model of the system. Finally, we demonstrate a new adaptive control method that keeps two oscillators synchronized even when the coupling between them is changing unpredictably.
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Submitted 22 September, 2009; v1 submitted 6 August, 2009;
originally announced August 2009.
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Molecular Scale Imaging with a Smooth Superlens
Authors:
Pratik Chaturvedi,
Wei Wu,
VJ Logeeswaran,
Zhaoning Yu,
M. Saif Islam,
S. Y. Wang,
R. Stanley Williams,
Nicholas Fang
Abstract:
We demonstrate a smooth and low loss silver (Ag) optical superlens capable of resolving features at 1/12th of the illumination wavelength with high fidelity. This is made possible by utilizing state-of-the-art nanoimprint technology and intermediate wetting layer of germanium (Ge) for the growth of flat silver films with surface roughness at sub-nanometer scales. Our measurement of the resolved…
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We demonstrate a smooth and low loss silver (Ag) optical superlens capable of resolving features at 1/12th of the illumination wavelength with high fidelity. This is made possible by utilizing state-of-the-art nanoimprint technology and intermediate wetting layer of germanium (Ge) for the growth of flat silver films with surface roughness at sub-nanometer scales. Our measurement of the resolved lines of 30nm half-pitch shows a full-width at half-maximum better than 37nm, in excellent agreement with theoretical predictions. The development of this unique optical superlens lead promise to parallel imaging and nanofabrication in a single snapshot, a feat that are not yet available with other nanoscale imaging techniques such as atomic force microscope or scanning electron microscope.
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Submitted 5 June, 2009;
originally announced June 2009.
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Modulation of Negative Index Metamaterials in the Near-IR Range
Authors:
Evgenia Kim,
Wei Wu,
Ekaterina Ponizovskaya,
Zhaoning Yu,
Alexander M. Bratkovsky,
Shih-Yuang Wang,
R. Stanley Williams,
Y. Ron Shen
Abstract:
Optical modulation of the effective refractive properties of a "fishnet" metamaterial with a Ag/Si/Ag heterostructure is demonstrated in the near-IR range and the associated fast dynamics of negative refractive index is studied by pump-probe method. Photo excitation of the amorphous Si layer at visible wavelength and corresponding modification of its optical parameters is found to be responsible…
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Optical modulation of the effective refractive properties of a "fishnet" metamaterial with a Ag/Si/Ag heterostructure is demonstrated in the near-IR range and the associated fast dynamics of negative refractive index is studied by pump-probe method. Photo excitation of the amorphous Si layer at visible wavelength and corresponding modification of its optical parameters is found to be responsible for the observed modulation of negative refractive index in near-IR.
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Submitted 15 August, 2007;
originally announced August 2007.
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Quantum Conductance Oscillations in Metal/Molecule/Metal Switches at Room Temperature
Authors:
Feng Miao,
Douglas Ohlberg,
Duncan Stewart,
R. Stanley Williams,
Chun Ning Lau*
Abstract:
Conductance switching has been reported in many molecular junction devices, but in most cases has not been convincingly explained. We investigate conductance switching in Pt/stearic acid monolayer/Ti devices using pressure-modulated conductance microscopy. For devices with conductance G>>G_Q or G<<G_Q, where GQ=2e^2/h is the conductance quantum, pressure-induced conductance peaks <30 nm in diame…
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Conductance switching has been reported in many molecular junction devices, but in most cases has not been convincingly explained. We investigate conductance switching in Pt/stearic acid monolayer/Ti devices using pressure-modulated conductance microscopy. For devices with conductance G>>G_Q or G<<G_Q, where GQ=2e^2/h is the conductance quantum, pressure-induced conductance peaks <30 nm in diameter are observed, indicating the formation of nanoscale conducting pathways between the electrodes. For devices with G~ 1- 2 G_Q, in addition to conductance peaks we also observed conductance dips and oscillations in response to localized pressure. These results can be modeled by considering interfering electron waves along a quantum conductance channel between two partially transmitting electrode surfaces. Our findings underscore the possible use of these devices as atomic-scale switches.
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Submitted 10 March, 2007;
originally announced March 2007.
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Alloying mechanisms for epitaxial nanocrystals
Authors:
M. S. Leite,
G. Medeiros-Ribeiro,
T. I. Kamins,
R. Stanley Williams
Abstract:
The different mechanisms involved in the alloying of epitaxial nanocrystals are reported in this letter. Intermixing during growth, surface diffusion and intra-island diffusion were investigated by varying the growth conditions and annealing environments during chemical vapor deposition. The relative importance of each mechanism was evaluated in determining a particular composition profile for d…
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The different mechanisms involved in the alloying of epitaxial nanocrystals are reported in this letter. Intermixing during growth, surface diffusion and intra-island diffusion were investigated by varying the growth conditions and annealing environments during chemical vapor deposition. The relative importance of each mechanism was evaluated in determining a particular composition profile for dome-shaped Ge:Si (001) islands. For samples grown at a faster rate, intermixing during growth was reduced. Si surface diffusion dominates during H$_2$ annealing whereas Ge surface diffusion and intra-island diffusion prevail during annealing in a PH$_3$ environment.
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Submitted 30 January, 2007; v1 submitted 29 January, 2007;
originally announced January 2007.
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Prospects for Non-Standard Interactions at MiniBooNE
Authors:
Loretta M. Johnson,
R. Seton Williams,
Laura F. Spencer,
Burton J. DeWilde
Abstract:
MiniBooNE is expected to soon report analysis of their closed data set, and we here consider what effect direct non-standard neutrino interactions would have on their observations. Current direct limits on non-standard interactions make interpretation of a $ν_e$ signal at MiniBooNE as three-flavor oscillations plus direct interactions untenable. However, $ν_τ$ from non-standard interactions at t…
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MiniBooNE is expected to soon report analysis of their closed data set, and we here consider what effect direct non-standard neutrino interactions would have on their observations. Current direct limits on non-standard interactions make interpretation of a $ν_e$ signal at MiniBooNE as three-flavor oscillations plus direct interactions untenable. However, $ν_τ$ from non-standard interactions at the source could contribute to a $ν_μ$ deficit which may be observable if non-standard interactions are sizable.
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Submitted 1 October, 2006;
originally announced October 2006.
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Optical Metamaterials at Near and Mid IR Range Fabricated by Nanoimprint Lithography
Authors:
W. Wu,
E. Kim,
E. Ponizovskaya,
Y. Liu,
Z. Yu,
N. Fang,
Y. R. Shen,
A. M. Bratkovsky,
W. Tong,
C. Sun,
X. Zhang,
S. -Y. Wang,
R. S. Williams
Abstract:
Two types of optical metamaterials operating at near-IR and mid-IR frequencies, respectively, have been designed, fabricated by nanoimprint lithography (NIL), and characterized by laser spectroscopic ellipsometry. The structure for the near-IR range was a metal/dielectric/metal stack "fishnet" structure that demonstrated negative permittivity and permeability in the same frequency region and hen…
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Two types of optical metamaterials operating at near-IR and mid-IR frequencies, respectively, have been designed, fabricated by nanoimprint lithography (NIL), and characterized by laser spectroscopic ellipsometry. The structure for the near-IR range was a metal/dielectric/metal stack "fishnet" structure that demonstrated negative permittivity and permeability in the same frequency region and hence exhibited a negative refractive index at a wavelength near 1.7 um. In the mid-IR range, the metamaterial was an ordered array of four-fold symmetric L-shaped resonators (LSRs) that showed both a dipole plasmon resonance resulting in negative permittivity and a magnetic resonance with negative permeability near wavelengths of 3.7 um and 5.25 um, respectively. The optical properties of both metamaterials are in agreement with theoretical predictions. This work demonstrates the feasibility of designing various optical negative-index metamaterials and fabricating them using the nanoimprint lithography as a low-cost, high-throughput fabrication approach.
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Submitted 12 October, 2006;
originally announced October 2006.
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Bistable molecular conductors with a field-switchable dipole group
Authors:
P. E. Kornilovitch,
A. M. Bratkovsky,
R. S. Williams
Abstract:
A class of bistable "stator-rotor" molecules is proposed, where a stationary bridge (stator) connects the two electrodes and facilitates electron transport between them. The rotor part, which has a large dipole moment, is attached to an atom of the stator via a single sigma bond. Hydrogen bonds formed between the rotor and stator make the symmetric orientation of the dipole unstable. The rotor h…
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A class of bistable "stator-rotor" molecules is proposed, where a stationary bridge (stator) connects the two electrodes and facilitates electron transport between them. The rotor part, which has a large dipole moment, is attached to an atom of the stator via a single sigma bond. Hydrogen bonds formed between the rotor and stator make the symmetric orientation of the dipole unstable. The rotor has two potential minima with equal energy for rotation about the sigma bond. The dipole orientation, which determines the conduction state of the molecule, can be switched by an external electric field that changes the relative energy of the two potential minima. Both orientation of the rotor correspond to asymmetric current-voltage characteristics that are the reverse of each other, so they are distinguishable electrically. Such bistable stator-rotor molecules could potentially be used as parts of molecular electronic devices.
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Submitted 25 June, 2002;
originally announced June 2002.
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Current rectification by molecules with asymmetric tunneling barriers
Authors:
P. E. Kornilovitch,
A. M. Bratkovsky,
R. S. Williams
Abstract:
A simple experimentally accessible realization of current rectification by molecules (molecular films) bridging metal electrodes is described. It is based on the spatial asymmetry of the molecule and requires only one resonant conducting molecular level (pi-orbital). The rectification, which is due to asymmetric coupling of the level to the electrodes by tunnel barriers, is largely independent o…
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A simple experimentally accessible realization of current rectification by molecules (molecular films) bridging metal electrodes is described. It is based on the spatial asymmetry of the molecule and requires only one resonant conducting molecular level (pi-orbital). The rectification, which is due to asymmetric coupling of the level to the electrodes by tunnel barriers, is largely independent of the work function difference between the two electrodes. Results of extensive numerical studies of the family of suggested molecular rectifiers HS-(CH2)_m-C6H4-(CH2)_n-SH are presented. The highest rectification ratio ~500 is achieved at m = 2 and n = 10.
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Submitted 26 June, 2002; v1 submitted 31 May, 2002;
originally announced June 2002.
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Bi-stable tunneling current through a molecular quantum dot
Authors:
A. S. Alexandrov,
A. M. Bratkovsky,
R. S. Williams
Abstract:
An exact solution is presented for tunneling through a negative-U d-fold degenerate molecular quantum dot weakly coupled to electrical leads. The tunnel current exhibits hysteresis if the level degeneracy of the negative-U dot is larger than two (d>2). Switching occurs in the voltage range V1 < V < V2 as a result of attractive electron correlations in the molecule, which open up a new conducting…
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An exact solution is presented for tunneling through a negative-U d-fold degenerate molecular quantum dot weakly coupled to electrical leads. The tunnel current exhibits hysteresis if the level degeneracy of the negative-U dot is larger than two (d>2). Switching occurs in the voltage range V1 < V < V2 as a result of attractive electron correlations in the molecule, which open up a new conducting channel when the voltage is above the threshold bias voltage V2. Once this current has been established, the extra channel remains open as the voltage is reduced down to the lower threshold voltage V1. Possible realizations of the bi-stable molecular quantum dots are fullerenes, especially C60, and mixed-valence compounds.
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Submitted 18 December, 2002; v1 submitted 18 April, 2002;
originally announced April 2002.
