Showing 1–50 of 382 results for author: Wegscheider, W

Spin polarization of Quantum Hall states for filling factors 1 < v < 2 measured with microcavity polaritons

Authors: Odysseas Williams, Stefan Faelt, Filip Krizek, Werner Wegscheider

Abstract: Spin polarization measurements were performed in three 2D Electron Gases in GaAs with densities n = 9.1, 7.2 and 6.5 x10^10 cm-2, in the quantum Hall regime. Full spin polarization at v = 1 surrounded by rapid depolarization due to Skyrmion formation was observed in all devices, consistent with past measurements. Depolarization of the v = 4/3, 8/5 states and repolarization of the v = 5/3 state was… ▽ More Spin polarization measurements were performed in three 2D Electron Gases in GaAs with densities n = 9.1, 7.2 and 6.5 x10^10 cm-2, in the quantum Hall regime. Full spin polarization at v = 1 surrounded by rapid depolarization due to Skyrmion formation was observed in all devices, consistent with past measurements. Depolarization of the v = 4/3, 8/5 states and repolarization of the v = 5/3 state was also measured, in remarkable agreement with a non-interacting, disorder-free Composite Fermion model. Optical power and temperature dependent measurements of the v = 1 state suggest a regime of non-linear optics. △ Less

Submitted 3 October, 2024; originally announced October 2024.

Memory resistor based in GaAs 2D-bilayers: In and out of equilibrium

Authors: Christian Marty, Zijin Lei, Saverio Silletta, Christian Reichl, Werner Dietsche, Werner Wegscheider

Abstract: Resonant tunneling between closely spaced two dimensional electron gases is a single particle phenomenon that has sparked interest for decades. High tunneling conductances at equal electron densities are observed whenever the Fermi levels of the two quantum wells align. Detuning the Fermi levels out of the resonant 2D-2D tunneling regime causes a negative differential resistance. The negative diff… ▽ More Resonant tunneling between closely spaced two dimensional electron gases is a single particle phenomenon that has sparked interest for decades. High tunneling conductances at equal electron densities are observed whenever the Fermi levels of the two quantum wells align. Detuning the Fermi levels out of the resonant 2D-2D tunneling regime causes a negative differential resistance. The negative differential resistance leads to a hysteresis when operating the device in a current driven mode, allowing a bilayer system to function as a volatile memory resistor. △ Less

Submitted 18 September, 2024; originally announced September 2024.

Development of a Nb-based semiconductor-superconductor hybrid platform

Authors: Sjoerd Telkamp, Tommaso Antonelli, Clemens Todt, Manuel Hinderling, Marco Coraiola, Daniel Haxell, Sofieke C. ten Kate, Deividas Sabonis, Peng Zeng, Rüdiger Schott, Erik Cheah, Christian Reichl, Fabrizio Nichele, Filip Krizek, Werner Wegscheider

Abstract: Semiconductor-superconductor hybrid materials are used as a platform to realise Andreev bound states, which hold great promise for quantum applications. These states require transparent interfaces between the semiconductor and superconductor, which are typically realised by in-situ deposition of an Al superconducting layer. Here we present a hybrid material based on an InAs two-dimensional electro… ▽ More Semiconductor-superconductor hybrid materials are used as a platform to realise Andreev bound states, which hold great promise for quantum applications. These states require transparent interfaces between the semiconductor and superconductor, which are typically realised by in-situ deposition of an Al superconducting layer. Here we present a hybrid material based on an InAs two-dimensional electron gas (2DEG) combined with in-situ deposited Nb and NbTi superconductors, which offer a larger operating range in temperature and magnetic field due to their larger superconducting gap. We overcome the inherent difficulty associated with the formation of an amorphous interface between III-V semiconductors and Nb-based superconductors by introducing a 7 nm Al interlayer. The Al interlayer provides an epitaxial connection between an in-situ magnetron sputtered Nb or NbTi thin film and a shallow InAs 2DEG. This metal-to-metal epitaxy is achieved by optimization of the material stack and results in an induced superconducting gap of approximately 1 meV, determined from transport measurements of superconductor-semiconductor Josephson junctions. This induced gap is approximately five times larger than the values reported for Al-based hybrid materials and indicates the formation of highly-transparent interfaces that are required in high-quality hybrid material platforms. △ Less

Submitted 20 August, 2024; originally announced August 2024.

Enhanced fractional quantum Hall gaps in a two-dimensional electron gas coupled to a hovering split-ring resonator

Authors: Josefine Enkner, Lorenzo Graziotto, Dalin Boriçi, Felice Appugliese, Christian Reichl, Giacomo Scalari, Nicolas Regnault, Werner Wegscheider, Cristiano Ciuti, Jérôme Faist

Abstract: The magnetotransport of a high-mobility two-dimensional electron gas coupled to a hovering split-ring resonator with controllable distance is studied in the quantum Hall regime. The measurements reveal an enhancement by more than a factor 2 of the quantum Hall energy gaps at the fractional filling factors 4/3, 5/3, and 7/5, alongside a concurrent reduction in exchange splitting at odd integer fill… ▽ More The magnetotransport of a high-mobility two-dimensional electron gas coupled to a hovering split-ring resonator with controllable distance is studied in the quantum Hall regime. The measurements reveal an enhancement by more than a factor 2 of the quantum Hall energy gaps at the fractional filling factors 4/3, 5/3, and 7/5, alongside a concurrent reduction in exchange splitting at odd integer filling factors. Theoretically, we show the strength of both effects to be quantitatively compatible with the emergence of an effective electron-electron long-range attractive interaction mediated by the exchange of virtual cavity photons in the presence of significant spatial gradients of the cavity electric vacuum fields. These results unveil a compelling interplay between cavity quantum electrodynamics and electronic correlations in two-dimensional systems, with profound implications for the manipulation and control of quantum phases in 2D materials. △ Less

Submitted 28 May, 2024; originally announced May 2024.

Magnetocapacitance oscillations dominated by giant Rashba spin orbit interaction in InAs/GaSb quantum wells separated by AlSb barrier

Authors: A. S. L. Ribeiro, R. Schott, C. Reichl, W. Dietsche, W. Wegscheider

Abstract: We observed magnetocapacitance oscillations in InAs/GaSb quantum wells separated by a $20$\,nm AlSb middle barrier. By realizing independent ohmic contacts for electrons in InAs and holes in the GaSb layer, we found an out-of-plane oscillatory response in capacitance representing the density of states of this system. We were able to tune the charge carrier densities by applying a DC bias voltage,… ▽ More We observed magnetocapacitance oscillations in InAs/GaSb quantum wells separated by a $20$\,nm AlSb middle barrier. By realizing independent ohmic contacts for electrons in InAs and holes in the GaSb layer, we found an out-of-plane oscillatory response in capacitance representing the density of states of this system. We were able to tune the charge carrier densities by applying a DC bias voltage, identifying the formation of beating signatures for forward bias. The coexistence of two distinguishable two dimensional charge carrier systems of unequal densities was verified. The corresponding Landau phase diagram presents distinct features originating from the two observed densities. A giant Rashba coefficient ranging from $430-612$\,meV$\textÅ$ and large \textit{g}-factor value underlines the influence of spin orbit interaction. △ Less

Submitted 25 April, 2024; originally announced April 2024.

The effect of niobium thin film structure on losses in superconducting circuits

Authors: Maxwell Drimmer, Sjoerd Telkamp, Felix L. Fischer, Ines C. Rodrigues, Clemens Todt, Filip Krizek, Dominik Kriegner, Christoph Müller, Werner Wegscheider, Yiwen Chu

Abstract: The performance of superconducting microwave circuits is strongly influenced by the material properties of the superconducting film and substrate. While progress has been made in understanding the importance of surface preparation and the effect of surface oxides, the complex effect of superconductor film structure on microwave losses is not yet fully understood. In this study, we investigate the… ▽ More The performance of superconducting microwave circuits is strongly influenced by the material properties of the superconducting film and substrate. While progress has been made in understanding the importance of surface preparation and the effect of surface oxides, the complex effect of superconductor film structure on microwave losses is not yet fully understood. In this study, we investigate the microwave properties of niobium resonators with different crystalline properties and related surface topographies. We analyze a series of magnetron sputtered films in which the Nb crystal orientation and surface topography are changed by varying the substrate temperatures between room temperature and 975 K. The lowest-loss resonators that we measure have quality factors of over one million at single-photon powers, among the best ever recorded using the Nb on sapphire platform. We observe the highest quality factors in films grown at an intermediate temperature regime of the growth series (550 K) where the films display both preferential ordering of the crystal domains and low surface roughness. Furthermore, we analyze the temperature-dependent behavior of our resonators to learn about how the quasiparticle density in the Nb film is affected by the niobium crystal structure and the presence of grain boundaries. Our results stress the connection between the crystal structure of superconducting films and the loss mechanisms suffered by the resonators and demonstrate that even a moderate change in temperature during thin film deposition can significantly affect the resulting quality factors. △ Less

Submitted 18 March, 2024; originally announced March 2024.

Quantum Hall effect in InAsSb quantum wells at elevated temperatures

Authors: M. E. Bal, E. Cheah, Z. Lei, R. Schott, C. A. Lehner, H. Engelkamp, W. Wegscheider, U. Zeitler

Abstract: We have characterized the electronic properties of a high-mobility two-dimensional electron system in modulation doped InAsSb quantum wells and compare them to InSb quantum wells grown in a similar fashion. Using temperature-dependent Shubnikov-de Haas experiments as well as FIR transmission we find an effective mass of $m^{\ast} \approx$ 0.022$m_{e}$, which is lower than in the investigated InSb… ▽ More We have characterized the electronic properties of a high-mobility two-dimensional electron system in modulation doped InAsSb quantum wells and compare them to InSb quantum wells grown in a similar fashion. Using temperature-dependent Shubnikov-de Haas experiments as well as FIR transmission we find an effective mass of $m^{\ast} \approx$ 0.022$m_{e}$, which is lower than in the investigated InSb quantum well, but due to a rather strong confinement still higher than in the corresponding bulk compound. The effective $g$-factor was determined to be $g^{\ast} \approx$ 21.9. These results are also corroborated by $k \cdot p$ band structure calculations. When spin polarizing the electrons in a tilted magnetic field, the $g$-factor is significantly enhanced by electron-electron interactions, reaching a value as large as $g^{\ast}$ = 60 at a spin polarization P = 0.75. Finally, we show that due to the low effective mass the quantum Hall effect in our particular sample can be observed up to a temperature of 60 K and we propose scenarios how to increase this temperature even further. △ Less

Submitted 15 December, 2023; originally announced December 2023.

Comments: 12 pages, 15 figures

Flux-Tunable Josephson Diode Effect in a Hybrid Four-Terminal Josephson Junction

Authors: M. Coraiola, A. E. Svetogorov, D. Z. Haxell, D. Sabonis, M. Hinderling, S. C. ten Kate, E. Cheah, F. Krizek, R. Schott, W. Wegscheider, J. C. Cuevas, W. Belzig, F. Nichele

Abstract: We investigate the direction-dependent switching current in a flux-tunable four-terminal Josephson junction defined in an InAs/Al two-dimensional heterostructure. The device exhibits the Josephson diode effect, with switching currents that depend on the sign of the bias current. The superconducting diode efficiency, reaching a maximum of $|η|\approx34\%$, is widely tunable - both in amplitude and… ▽ More We investigate the direction-dependent switching current in a flux-tunable four-terminal Josephson junction defined in an InAs/Al two-dimensional heterostructure. The device exhibits the Josephson diode effect, with switching currents that depend on the sign of the bias current. The superconducting diode efficiency, reaching a maximum of $|η|\approx34\%$, is widely tunable - both in amplitude and sign - as a function of magnetic fluxes and gate voltages. Our observations are supported by a circuit model of three parallel Josephson junctions with non-sinusoidal current-phase relation. With respect to conventional Josephson interferometers, phase-tunable multiterminal Josephson junctions enable large diode efficiencies in structurally symmetric devices, where local magnetic fluxes break both time-reversal and spatial-inversion symmetries. Our work establishes a pathway to develop Josephson diodes with wide-range tunability and that do not rely on exotic materials or externally applied magnetic fields. △ Less

Submitted 11 December, 2023; v1 submitted 7 December, 2023; originally announced December 2023.

Journal ref: ACS Nano 18, 9221-9231 (2024)

Testing the Renormalization of the von Klitzing Constant by Cavity Vacuum Fields

Authors: Josefine Enkner, Lorenzo Graziotto, Felice Appugliese, Vasil Rokaj, Jie Wang, Michael Ruggenthaler, Christian Reichl, Werner Wegscheider, Angel Rubio, Jérôme Faist

Abstract: In light of recent developments demonstrating the impact of cavity vacuum fields inducing the breakdown of topological protection in the integer quantum Hall effect, a compelling question arises: what effects might cavity vacuum fields have on fundamental constants in solid-state systems? In this work we present an experiment that assesses the possibility of the von Klitzing constant itself being… ▽ More In light of recent developments demonstrating the impact of cavity vacuum fields inducing the breakdown of topological protection in the integer quantum Hall effect, a compelling question arises: what effects might cavity vacuum fields have on fundamental constants in solid-state systems? In this work we present an experiment that assesses the possibility of the von Klitzing constant itself being modified. By employing a Wheatstone bridge, we precisely measure the difference between the quantized Hall resistance of a cavity-embedded Hall bar and the resistance standard, achieving an accuracy down to 1 part in 105 for the lowest Landau level. While our results do not suggest any deviation that could imply a modified Hall resistance, our work represents pioneering efforts in exploring the fundamental implications of vacuum fields in solid-state systems. △ Less

Submitted 17 November, 2023; originally announced November 2023.

Long distance electron-electron scattering detected with point contacts

Authors: Lev V. Ginzburg, Yuze Wu, Marc P. Röösli, Pedro Rosso Gomez, Rebekka Garreis, Chuyao Tong, Veronika Stará, Carolin Gold, Khachatur Nazaryan, Serhii Kryhin, Hiske Overweg, Christian Reichl, Matthias Berl, Takashi Taniguchi, Kenji Watanabe, Werner Wegscheider, Thomas Ihn, Klaus Ensslin

Abstract: We measure electron transport through point contacts in an electron gas in AlGaAs/GaAs heterostructures and graphene for a range of temperatures, magnetic fields and electron densities. We find a magnetoconductance peak around B = 0. With increasing temperature, the width of the peak increases monotonically, while its amplitude first increases and then decreases. For GaAs point contacts the peak i… ▽ More We measure electron transport through point contacts in an electron gas in AlGaAs/GaAs heterostructures and graphene for a range of temperatures, magnetic fields and electron densities. We find a magnetoconductance peak around B = 0. With increasing temperature, the width of the peak increases monotonically, while its amplitude first increases and then decreases. For GaAs point contacts the peak is particularly sharp at relatively low temperatures $T\approx$1.5 K: the curve rounds on a scale of few tens of $μ$T hinting at length scales of several millimeters for the corresponding scattering processes. We propose a model based on the transition between different transport regimes with increasing temperature: from ballistic transport to few electron-electron scatterings to hydrodynamic superballistic flow to hydrodynamic Poiseuille-like flow. The model is in qualitative and, in many cases, quantitative agreement with the experimental observations. △ Less

Submitted 11 August, 2023; originally announced August 2023.

Comments: 14 pages, 11 figures

Journal ref: Phys. Rev. Research 5, 043088 (2023)

Flip-chip-based fast inductive parity readout of a planar superconducting island

Authors: M. Hinderling, S. C. ten Kate, D. Z. Haxell, M. Coraiola, S. Paredes, E. Cheah, F. Krizek, R. Schott, W. Wegscheider, D. Sabonis, F. Nichele

Abstract: Properties of superconducting devices depend sensitively on the parity (even or odd) of the quasiparticles they contain. Encoding quantum information in the parity degree of freedom is central in several emerging solid-state qubit architectures. Yet, accurate, non-destructive, and time-resolved parity measurement is a challenging and long-standing issue. Here we report on control and real-time par… ▽ More Properties of superconducting devices depend sensitively on the parity (even or odd) of the quasiparticles they contain. Encoding quantum information in the parity degree of freedom is central in several emerging solid-state qubit architectures. Yet, accurate, non-destructive, and time-resolved parity measurement is a challenging and long-standing issue. Here we report on control and real-time parity measurement in a superconducting island embedded in a superconducting loop and realized in a hybrid two-dimensional heterostructure using a microwave resonator. Device and readout resonator are located on separate chips, connected via flip-chip bonding, and couple inductively through vacuum. The superconducting resonator detects the parity-dependent circuit inductance, allowing for fast and non-destructive parity readout. We resolved even and odd parity states with signal-to-noise ratio SNR $\approx3$ with an integration time of $20~μ$s and detection fidelity exceeding 98%. Real-time parity measurement showed state lifetime extending into millisecond range. Our approach will lead to better understanding of coherence-limiting mechanisms in superconducting quantum hardware and provide novel readout schemes for hybrid qubits. △ Less

Submitted 13 July, 2023; originally announced July 2023.

Journal ref: PRX Quantum 5, 030337 (2024)

Spin-degeneracy breaking and parity transitions in three-terminal Josephson junctions

Authors: M. Coraiola, D. Z. Haxell, D. Sabonis, M. Hinderling, S. C. ten Kate, E. Cheah, F. Krizek, R. Schott, W. Wegscheider, F. Nichele

Abstract: Harnessing spin and parity degrees of freedom is of fundamental importance for the realization of emergent quantum devices. Nanostructures embedded in superconductor--semiconductor hybrid materials offer novel and yet unexplored routes for addressing and manipulating fermionic modes. Here we spectroscopically probe the two-dimensional band structure of Andreev bound states in a phase-controlled hy… ▽ More Harnessing spin and parity degrees of freedom is of fundamental importance for the realization of emergent quantum devices. Nanostructures embedded in superconductor--semiconductor hybrid materials offer novel and yet unexplored routes for addressing and manipulating fermionic modes. Here we spectroscopically probe the two-dimensional band structure of Andreev bound states in a phase-controlled hybrid three-terminal Josephson junction. Andreev bands reveal spin-degeneracy breaking, with level splitting in excess of 9 GHz, and zero-energy crossings associated to ground state fermion parity transitions, in agreement with theoretical predictions. Both effects occur without the need of external magnetic fields or sizable charging energies and are tuned locally by controlling superconducting phase differences. Our results highlight the potential of multiterminal hybrid devices for engineering quantum states. △ Less

Submitted 13 July, 2023; originally announced July 2023.

Journal ref: Phys. Rev. X 14, 031024 (2024)

Strongly interacting 2D electron systems: Evidence for enhanced 1D edge-channel coupling

Authors: C. Marty, C. Reichl, S. Parolo, I. Grandt-Ionita, J. Scharnetzky, W. Dietsche, W. Wegscheider

Abstract: We observe nearly vanishing Hall resistances for integer filling factors in a counterflow (CF) experiment on a density balanced 2D bilayer system. Filling factor dependent equilibration lengths demonstrate enhanced 1D coupling via edge-channels. Due to the narrow barrier the edge-modes of the two 2DEGs are in close proximity allowing for 1D excitonic correlations. Electron drag measurements confir… ▽ More We observe nearly vanishing Hall resistances for integer filling factors in a counterflow (CF) experiment on a density balanced 2D bilayer system. Filling factor dependent equilibration lengths demonstrate enhanced 1D coupling via edge-channels. Due to the narrow barrier the edge-modes of the two 2DEGs are in close proximity allowing for 1D excitonic correlations. Electron drag measurements confirm the observed quantum state selective coupling between the layers. △ Less

Submitted 17 July, 2023; v1 submitted 9 July, 2023; originally announced July 2023.

Comments: Added references

Nonlinear response of 2DEG in the quantum Hall regime

Authors: Shuichi Iwakiri, Lev V. Ginzburg, Marc P. Röösli, Yigal Meir, Ady Stern, Christian Reichl, Matthias Berl, Werner Wegscheider, Thomas Ihn, Klaus Ensslin

Abstract: Breaking of inversion symmetry leads to nonlinear and nonreciprocal electron transport, in which the voltage response does not invert with the reversal of the current direction. Many systems have incorporated inversion symmetry breaking into their band or crystal structures. In this work, we demonstrate that a conventional two-dimensional electron gas (2DEG) system with a back gate shows non-recip… ▽ More Breaking of inversion symmetry leads to nonlinear and nonreciprocal electron transport, in which the voltage response does not invert with the reversal of the current direction. Many systems have incorporated inversion symmetry breaking into their band or crystal structures. In this work, we demonstrate that a conventional two-dimensional electron gas (2DEG) system with a back gate shows non-reciprocal behavior (with voltage proportional to current squared) in the quantum Hall regime, which depends on the out-of-plane magnetic field and contact configuration. The inversion symmetry is broken due to the presence of the back gate and magnetic field, and our phenomenological model provides a qualitative explanation of the experimental data. Our results suggest a universal mechanism that gives rise to non-reciprocal behavior in gated samples. △ Less

Submitted 16 June, 2023; originally announced June 2023.

Comments: 8 pages, 6 figures

Journal ref: Phys. Rev. Research 5, L032046 (2023)

Zeeman and Orbital Driven Phase Transitions in Planar Josephson Junctions

Authors: D. Z. Haxell, M. Coraiola, D. Sabonis, M. Hinderling, S. C. ten Kate, E. Cheah, F. Krizek, R. Schott, W. Wegscheider, F. Nichele

Abstract: We perform supercurrent and tunneling spectroscopy measurements on gate-tunable InAs/Al Josephson junctions (JJs) in an in-plane magnetic field, and report on phase shifts in the current-phase relation measured with respect to an absolute phase reference. The impact of orbital effects is investigated by studying multiple devices with different superconducting lead sizes. At low fields, we observe… ▽ More We perform supercurrent and tunneling spectroscopy measurements on gate-tunable InAs/Al Josephson junctions (JJs) in an in-plane magnetic field, and report on phase shifts in the current-phase relation measured with respect to an absolute phase reference. The impact of orbital effects is investigated by studying multiple devices with different superconducting lead sizes. At low fields, we observe gate-dependent phase shifts of up to ${\varphi_{0}=0.5π}$ which are consistent with a Zeeman field coupling to highly-transmissive Andreev bound states via Rashba spin-orbit interaction. A distinct phase shift emerges at larger fields, concomitant with a switching current minimum and the closing and reopening of the superconducting gap. These signatures of an induced phase transition, which might resemble a topological transition, scale with the superconducting lead size, demonstrating the crucial role of orbital effects. Our results elucidate the interplay of Zeeman, spin-orbit and orbital effects in InAs/Al JJs, giving new understanding to phase transitions in hybrid JJs and their applications in quantum computing and superconducting electronics. △ Less

Submitted 5 June, 2023; v1 submitted 2 June, 2023; originally announced June 2023.

Journal ref: ACS Nano 17, 18139-18147 (2023)

Demonstration of nonlocal Josephson effect in Andreev molecules

Authors: D. Z. Haxell, M. Coraiola, M. Hinderling, S. C. ten Kate, D. Sabonis, A. E. Svetogorov, W. Belzig, E. Cheah, F. Krizek, R. Schott, W. Wegscheider, F. Nichele

Abstract: We perform switching current measurements of planar Josephson junctions (JJs) coupled by a common superconducting electrode, with independent control over the two superconducting phase differences. We observe an anomalous phase shift in the current--phase relation of a JJ as a function of gate voltage or phase difference in the second JJ. This demonstrates a nonlocal Josephson effect, and the impl… ▽ More We perform switching current measurements of planar Josephson junctions (JJs) coupled by a common superconducting electrode, with independent control over the two superconducting phase differences. We observe an anomalous phase shift in the current--phase relation of a JJ as a function of gate voltage or phase difference in the second JJ. This demonstrates a nonlocal Josephson effect, and the implementation of a $\varphi_0$-junction which is tunable both electrostatically and magnetically. The anomalous phase shift was larger for shorter distances between the JJs and vanished for distances much longer than the superconducting coherence length. Results are consistent with the hybridization of ABSs, leading to the formation of an Andreev molecule. Our devices constitute a realization of a tunable superconducting phase source, and could enable new coupling schemes for hybrid quantum devices. △ Less

Submitted 4 July, 2023; v1 submitted 1 June, 2023; originally announced June 2023.

Journal ref: Nano Letters 23, 7532-7538 (2023)

Development of Nb-GaAs based superconductor semiconductor hybrid platform by combining in-situ dc magnetron sputtering and molecular beam epitaxy

Authors: Clemens Todt, Sjoerd Telkamp, Filip Krizek, Christian Reichl, Mihai Gabureac, Rüdiger Schott, Erik Cheah, Peng Zeng, Thomas Weber, Arnold Müller, Christof Vockenhuber, Mohsen Bahrami Panah, Werner Wegscheider

Abstract: We present Nb thin films deposited in-situ on GaAs by combining molecular beam epitaxy and magnetron sputtering within an ultra-high vacuum cluster. Nb films deposited at varying power, and a reference film from a commercial system, are compared. The results show clear variation between the in-situ and ex-situ deposition which we relate to differences in magnetron sputtering conditions and chamber… ▽ More We present Nb thin films deposited in-situ on GaAs by combining molecular beam epitaxy and magnetron sputtering within an ultra-high vacuum cluster. Nb films deposited at varying power, and a reference film from a commercial system, are compared. The results show clear variation between the in-situ and ex-situ deposition which we relate to differences in magnetron sputtering conditions and chamber geometry. The Nb films have critical temperatures of around $9 \textrm{K}$. and critical perpendicular magnetic fields of up to $B_{c2} = 1.4 \textrm{T}$ at $4.2 \textrm{K}$. From STEM images of the GaAs-Nb interface we find the formation of an amorphous interlayer between the GaAs and the Nb for both the ex-situ and in-situ deposited material. △ Less

Submitted 18 April, 2023; v1 submitted 17 April, 2023; originally announced April 2023.

Comments: 12 pages paper, 9 pages supplementary, 6 figures paper, 7 figures supplementary

Josephson-like tunnel resonance and large Coulomb drag in GaAs-based electron-hole bilayers

Authors: M. L. Davis, S. Parolo, C. Reichl, W. Dietsche, W. Wegscheider

Abstract: Bilayers consisting of two-dimensional (2D) electron and hole gases separated by a 10 nm thick AlGaAs barrier are formed by charge accumulation in epitaxially grown GaAs. Both vertical and lateral electric transport are measured in the millikelvin temperature range. The conductivity between the layers shows a sharp tunnel resonance at a density of $1.1 \cdot 10^{10} \text{ cm}^{-2}$, which is cons… ▽ More Bilayers consisting of two-dimensional (2D) electron and hole gases separated by a 10 nm thick AlGaAs barrier are formed by charge accumulation in epitaxially grown GaAs. Both vertical and lateral electric transport are measured in the millikelvin temperature range. The conductivity between the layers shows a sharp tunnel resonance at a density of $1.1 \cdot 10^{10} \text{ cm}^{-2}$, which is consistent with a Josephson-like enhanced tunnel conductance. The tunnel resonance disappears with increasing densities and the two 2D charge gases start to show 2D-Fermi-gas behavior. Interlayer interactions persist causing a positive drag voltage that is very large at small densities. The transition from the Josephson-like tunnel resonance to the Fermi-gas behavior is interpreted as a phase transition from an exciton gas in the Bose-Einstein-condensate state to a degenerate electron-hole Fermi gas. △ Less

Submitted 11 September, 2023; v1 submitted 13 April, 2023; originally announced April 2023.

Comments: Updated after reviewer comments

Phase-engineering the Andreev band structure of a three-terminal Josephson junction

Authors: M. Coraiola, D. Z. Haxell, D. Sabonis, H. Weisbrich, A. E. Svetogorov, M. Hinderling, S. C. ten Kate, E. Cheah, F. Krizek, R. Schott, W. Wegscheider, J. C. Cuevas, W. Belzig, F. Nichele

Abstract: In hybrid Josephson junctions with three or more superconducting terminals coupled to a semiconducting region, Andreev bound states may form unconventional energy band structures, or Andreev matter, which are engineered by controlling superconducting phase differences. Here we report tunnelling spectroscopy measurements of three-terminal Josephson junctions realised in an InAs/Al heterostructure.… ▽ More In hybrid Josephson junctions with three or more superconducting terminals coupled to a semiconducting region, Andreev bound states may form unconventional energy band structures, or Andreev matter, which are engineered by controlling superconducting phase differences. Here we report tunnelling spectroscopy measurements of three-terminal Josephson junctions realised in an InAs/Al heterostructure. The three terminals are connected to form two loops, enabling independent control over two phase differences and access to a synthetic Andreev band structure in the two-dimensional phase space. Our results demonstrate a phase-controlled Andreev molecule, originating from two discrete Andreev levels that spatially overlap and hybridise. Signatures of hybridisation are observed in the form of avoided crossings in the spectrum and band structure anisotropies in the phase space, all explained by a numerical model. Future extensions of this work could focus on addressing spin-resolved energy levels, ground state fermion parity transitions and Weyl bands in multiterminal geometries. △ Less

Submitted 11 December, 2023; v1 submitted 28 February, 2023; originally announced February 2023.

Journal ref: Nat Commun 14, 6784 (2023)

Spin-selective strong light-matter coupling in a 2D hole gas-microcavity system

Authors: Daniel G. Suarez-Forero, Deric Weston Session, Mahmoud Jalali Mehrabad, Patrick Knuppel, Stefan Faelt, Werner Wegscheider, Mohammad Hafezi

Abstract: The interplay between time-reversal symmetry breaking and strong light-matter coupling in 2D gases brings intriguing aspects to polariton physics. This combination can lead to polarization/spin selective light-matter interaction in the strong coupling regime. In this work, we report such a selective strong light-matter interaction by harnessing a 2D gas in the quantum Hall regime coupled to a micr… ▽ More The interplay between time-reversal symmetry breaking and strong light-matter coupling in 2D gases brings intriguing aspects to polariton physics. This combination can lead to polarization/spin selective light-matter interaction in the strong coupling regime. In this work, we report such a selective strong light-matter interaction by harnessing a 2D gas in the quantum Hall regime coupled to a microcavity. Specifically, we demonstrate circular-polarization dependence of the vacuum Rabi splitting, as a function of magnetic field and hole density. We provide a quantitative understanding of the phenomenon by modeling the coupling of optical transitions between Landau levels to the microcavity. This method introduces a control tool over the spin degree of freedom in polaritonic semiconductor systems, paving the way for new experimental possibilities in light-matter hybrids. △ Less

Submitted 12 February, 2023; originally announced February 2023.

Comments: Main text: 5 pages, 4 figures. Supplementary Material: 4 pages, 4 figures

Journal ref: Nat. Photon. (2023)

Control over epitaxy and the role of the InAs/Al interface in hybrid two-dimensional electron gas systems

Authors: E. Cheah, D. Z. Haxell, R. Schott, P. Zeng, E. Paysen, S. C. ten Kate, M. Coraiola, M. Landstetter, A. B. Zadeh, A. Trampert, M. Sousa, H. Riel, F. Nichele, W. Wegscheider, F. Krizek

Abstract: In-situ synthesised semiconductor/superconductor hybrid structures became an important material platform in condensed matter physics. Their development enabled a plethora of novel quantum transport experiments with focus on Andreev and Majorana physics. The combination of InAs and Al has become the workhorse material and has been successfully implemented in the form of one-dimensional structures a… ▽ More In-situ synthesised semiconductor/superconductor hybrid structures became an important material platform in condensed matter physics. Their development enabled a plethora of novel quantum transport experiments with focus on Andreev and Majorana physics. The combination of InAs and Al has become the workhorse material and has been successfully implemented in the form of one-dimensional structures and two-dimensional electron gases. In contrast to the well-developed semiconductor parts of the hybrid materials, the direct effect of the crystal nanotexture of Al films on the electron transport still remains unclear. This is mainly due to the complex epitaxial relation between Al and the semiconductor. We present a study of Al films on shallow InAs two-dimensional electron gas systems grown by molecular beam epitaxy, with focus on control of the Al crystal structure. We identify the dominant grain types present in our Al films and show that the formation of grain boundaries can be significantly reduced by controlled roughening of the epitaxial interface. Finally, we demonstrate that the implemented roughening does not negatively impact either the electron mobility of the two-dimensional electron gas or the basic superconducting properties of the proximitized system. △ Less

Submitted 17 January, 2023; originally announced January 2023.

Comments: 12 pages, 7 figures and supplementary material

Journal ref: Physical Review Materials 7, 073403 (2023)

Flip-chip-based microwave spectroscopy of Andreev bound states in a planar Josephson junction

Authors: M. Hinderling, D. Sabonis, S. Paredes, D. Z. Haxell, M. Coraiola, S. C. ten Kate, E. Cheah, F. Krizek, R. Schott, W. Wegscheider, F. Nichele

Abstract: We demonstrate a flip-chip-based approach to microwave measurements of Andreev bound states in a gate-tunable planar Josephson junction using inductively-coupled superconducting low-loss resonators. By means of electrostatic gating, we present control of both the density and transmission of Andreev bound states. Phase biasing of the device shifted the resonator frequency, consistent with the modul… ▽ More We demonstrate a flip-chip-based approach to microwave measurements of Andreev bound states in a gate-tunable planar Josephson junction using inductively-coupled superconducting low-loss resonators. By means of electrostatic gating, we present control of both the density and transmission of Andreev bound states. Phase biasing of the device shifted the resonator frequency, consistent with the modulation of supercurrent in the junction. Two-tone spectroscopy measurements revealed an isolated Andreev bound state consistent with an average induced superconducting gap of $184~\mathrm{μeV}$ and a gate-tunable transmission approaching $0.98$. Our results represent the feasibility of using the flip-chip technique to address and study Andreev bound states in planar Josephson junctions, and they give a promising path towards microwave applications with superconductor-semiconductor two-dimensional materials. △ Less

Submitted 17 January, 2023; v1 submitted 21 December, 2022; originally announced December 2022.

Journal ref: Phys. Rev. Applied 19, 054026 (2019)

Microwave-induced conductance replicas in hybrid Josephson junctions without Floquet-Andreev states

Authors: D. Z. Haxell, M. Coraiola, D. Sabonis, M. Hinderling, S. C. ten Kate, E. Cheah, F. Krizek, R. Schott, W. Wegscheider, W. Belzig, J. C. Cuevas, F. Nichele

Abstract: Light-matter interaction enables engineering of non-equilibrium quantum systems. In condensed matter, spatially and temporally cyclic Hamiltonians are expected to generate energy-periodic Floquet states, with properties inaccessible at thermal equilibrium. A recent work explored the tunnelling conductance of a planar Josephson junction under microwave irradiation, and interpreted replicas of condu… ▽ More Light-matter interaction enables engineering of non-equilibrium quantum systems. In condensed matter, spatially and temporally cyclic Hamiltonians are expected to generate energy-periodic Floquet states, with properties inaccessible at thermal equilibrium. A recent work explored the tunnelling conductance of a planar Josephson junction under microwave irradiation, and interpreted replicas of conductance features as evidence of steady Floquet-Andreev states. Here we realise a similar device in a hybrid superconducting-semiconducting heterostructure, which utilises a tunnelling probe with gate-tunable transparency and allows simultaneous measurements of Andreev spectrum and current-phase relation of the planar Josephson junction. We show that, in our devices, spectral replicas in sub-gap conductance emerging under microwave irradiation are caused by photon assisted tunnelling of electrons into Andreev states. The current-phase relation under microwave irradiation is also explained by the interaction of Andreev states with microwave photons, without the need to invoke Floquet states. The techniques outlined in this study establish a baseline to distinguish photon assisted tunnelling from Floquet-Andreev states in mesoscopic devices, a crucial development towards understanding light-matter coupling in hybrid nanostructures. △ Less

Submitted 16 June, 2023; v1 submitted 7 December, 2022; originally announced December 2022.

Journal ref: Nat Commun 14, 6798 (2023)

Controlled generation and detection of a thermal bias in Corbino devices under the quantum Hall regime

Authors: Mariano A. Real, Alejandra Tonina, Liliana Arrachea, Paula Giudici, Christian Reichl, Werner Wegscheider, Werner Dietsche

Abstract: We present an experimental technique to generate and measure a temperature bias in the quantum Hall effect of GaAs/AlGaAs Corbino samples. The bias is generated by injecting an electrical current at a central resistive heater and the resulting radial temperature drop is determined by conductance measurements at internal and external concentric rings. The experimental results agree with the predict… ▽ More We present an experimental technique to generate and measure a temperature bias in the quantum Hall effect of GaAs/AlGaAs Corbino samples. The bias is generated by injecting an electrical current at a central resistive heater and the resulting radial temperature drop is determined by conductance measurements at internal and external concentric rings. The experimental results agree with the predictions of numerical simulations of the heat flow through the substrate. We also compare these results with previous predictions based on the thermoelectric response of these devices △ Less

Submitted 27 February, 2023; v1 submitted 27 October, 2022; originally announced October 2022.

Comments: 6 pages, 5 figures

Gate-defined Two-dimensional Hole and Electron Systems in an Undoped InSb Quantum Well

Authors: Zijin Lei, Erik Cheah, Filip Krizek, Rüdiger Schott, Thomas Bähler, Peter Märki, Werner Wegscheider, Mansour Shayegan, Thomas Ihn, Klaus Ensslin

Abstract: Quantum transport measurements are performed in gate-defined, high-quality, two-dimensional hole and electron systems in an undoped InSb quantum well. For both polarities, the carrier systems show tunable spin-orbit interaction as extracted from weak anti-localization measurements. The effective mass of InSb holes strongly increases with carrier density as determined from the temperature dependenc… ▽ More Quantum transport measurements are performed in gate-defined, high-quality, two-dimensional hole and electron systems in an undoped InSb quantum well. For both polarities, the carrier systems show tunable spin-orbit interaction as extracted from weak anti-localization measurements. The effective mass of InSb holes strongly increases with carrier density as determined from the temperature dependence of Shubnikov-de Haas oscillations. Coincidence measurements in a tilted magnetic field are performed to estimate the spin susceptibility of the InSb two-dimensional hole system. The g-factor of the two-dimensional hole system decreases rapidly with increasing carrier density. △ Less

Submitted 22 August, 2022; originally announced August 2022.

Comments: 10 pages, 7 figures

Measurements of Phase Dynamics in Planar Josephson Junctions and SQUIDs

Authors: D. Z. Haxell, E. Cheah, F. Křížek, R. Schott, M. F. Ritter, M. Hinderling, W. Belzig, C. Bruder, W. Wegscheider, H. Riel, F. Nichele

Abstract: We experimentally investigate the stochastic phase dynamics of planar Josephson junctions (JJs) and superconducting quantum interference devices (SQUIDs) defined in epitaxial InAs/Al heterostructures, and characterized by a large ratio of Josephson energy to charging energy. We observe a crossover from a regime of macroscopic quantum tunneling to one of phase diffusion as a function of temperature… ▽ More We experimentally investigate the stochastic phase dynamics of planar Josephson junctions (JJs) and superconducting quantum interference devices (SQUIDs) defined in epitaxial InAs/Al heterostructures, and characterized by a large ratio of Josephson energy to charging energy. We observe a crossover from a regime of macroscopic quantum tunneling to one of phase diffusion as a function of temperature, where the transition temperature $T^{*}$ is gate-tunable. The switching probability distributions are shown to be consistent with a small shunt capacitance and moderate damping, resulting in a switching current which is a small fraction of the critical current. Phase locking between two JJs leads to a difference in switching current between that of a JJ measured in isolation and that of the same JJ measured in an asymmetric SQUID loop. In the case of the loop, $T^*$ is also tuned by a magnetic flux. △ Less

Submitted 21 November, 2022; v1 submitted 12 April, 2022; originally announced April 2022.

Journal ref: Physical Review Letters 130, 087002 (2023)

Long-range electron-electron interactions in quantum dot systems and applications in quantum chemistry

Authors: Johannes Knörzer, Cornelis J. van Diepen, Tzu-Kan Hsiao, Géza Giedke, Uditendu Mukhopadhyay, Christian Reichl, Werner Wegscheider, J. Ignacio Cirac, Lieven M. K. Vandersypen

Abstract: Long-range interactions play a key role in several phenomena of quantum physics and chemistry. To study these phenomena, analog quantum simulators provide an appealing alternative to classical numerical methods. Gate-defined quantum dots have been established as a platform for quantum simulation, but for those experiments the effect of long-range interactions between the electrons did not play a c… ▽ More Long-range interactions play a key role in several phenomena of quantum physics and chemistry. To study these phenomena, analog quantum simulators provide an appealing alternative to classical numerical methods. Gate-defined quantum dots have been established as a platform for quantum simulation, but for those experiments the effect of long-range interactions between the electrons did not play a crucial role. Here we present the first detailed experimental characterization of long-range electron-electron interactions in an array of gate-defined semiconductor quantum dots. We demonstrate significant interaction strength among electrons that are separated by up to four sites, and show that our theoretical prediction of the screening effects matches well the experimental results. Based on these findings, we investigate how long-range interactions in quantum-dot arrays may be utilized for analog simulations of artificial quantum matter. We numerically show that about ten quantum dots are sufficient to observe binding for a one-dimensional $H_2$-like molecule. These combined experimental and theoretical results pave the way for future quantum simulations with quantum dot arrays and benchmarks of numerical methods in quantum chemistry. △ Less

Submitted 14 February, 2022; originally announced February 2022.

Comments: 6 pages, 3 figures, supplemental material: 4 pages, 3 figures

Journal ref: Phys. Rev. Research 4, 033043 (2022)

Spin-Selective Equilibration among Integer Quantum Hall Edge Channels

Authors: G. Nicoli, C. Adam, M. P. Röösli, P. Märki, J. Scharnetzky, C. Reichl, W. Wegscheider, T. Ihn, K. Ensslin

Abstract: The equilibration between quantum Hall edge modes is known to depend on the disorder potential and the steepness of the edge. Modern samples with higher mobilities and setups with lower electron temperatures call for a further exploration of the topic. We develop a framework to systematically measure and analyze the equilibration of many (up to 8) integer edge modes. Our results show that spin-sel… ▽ More The equilibration between quantum Hall edge modes is known to depend on the disorder potential and the steepness of the edge. Modern samples with higher mobilities and setups with lower electron temperatures call for a further exploration of the topic. We develop a framework to systematically measure and analyze the equilibration of many (up to 8) integer edge modes. Our results show that spin-selective coupling dominates even for non-neighboring channels with parallel spin. Changes in magnetic field and bulk density let us control the equilibration until it is almost completely suppressed and dominated only by individual microscopic scatterers. This method could serve as a guideline to investigate and design improved devices, and to study fractional and other exotic states. △ Less

Submitted 23 December, 2021; originally announced December 2021.

Comments: 7 pages, 3 figures

Journal ref: Phys. Rev. Lett. 128, 056802 (2022)

Characterization of quasiparticle tunneling in a quantum dot from temperature dependent transport in the integer and fractional quantum Hall regime

Authors: Marc P. Röösli, Michael Hug, Giorgio Nicolí, Peter Märki, Christian Reichl, Bernd Rosenow, Werner Wegscheider, Thomas Ihn, Klaus Ensslin

Abstract: We report on magnetoconductance measurements through a weakly coupled quantum dot, containing roughly 900 electrons, in a wide magnetic field range from 0 T to 12 T. We find modulations of the conductance resonances in the quantum Hall regime for higher integer filling factors $6> ν_\mathrm{dot} > 2$, in addition to modulations at $2> ν_\mathrm{dot} > 1$ and at fractional filling factors… ▽ More We report on magnetoconductance measurements through a weakly coupled quantum dot, containing roughly 900 electrons, in a wide magnetic field range from 0 T to 12 T. We find modulations of the conductance resonances in the quantum Hall regime for higher integer filling factors $6> ν_\mathrm{dot} > 2$, in addition to modulations at $2> ν_\mathrm{dot} > 1$ and at fractional filling factors $ν_\mathrm{dot} \gtrsim 2/3$, $1/3$. Depending on the internal filling factor, edge reconstruction inside the quantum dot leads to the formation of multiple concentric compressible regions, which contain discrete charge and are separated by incompressible rings. Quasiparticle tunneling between different compressible regions results in magnetic-field-(pseudo)-periodic modulations of the Coulomb resonances with different periodicities, additional super-periodicity or non-periodic features. The evolution of the period in magnetic field indicates cyclic depopulation of the inner compressible regions close to integer filing factors. We study the temperature dependence of the conductance resonances for different magnetic fields. While at low fields, the resonance amplitude decays inversely with temperature, corresponding to single-level transport, the temperature dependence of the amplitude evolves continuously into a linearly increasing behavior for dot filling factor $2> ν_\mathrm{dot} > 1$. This coincides with a reduction of the charging energy by approximately a factor of 2 in the same regime. At zero magnetic field, the temperature dependence differs for individual resonances, and is found to depend on the closeness to quantum dot states that couple strongly to the leads. The presented experiments complement and extend previous results on internal rearrangements of quasiparticles for weakly coupled quantum dots in magnetic field. △ Less

Submitted 22 December, 2021; originally announced December 2021.

Comments: 17 pages, 8 figures

High-quality Two-Dimensional Electron Gas in Undoped InSb Quantum Wells

Authors: Zijin Lei, Erik Cheah, Km Rubi, Maurice E. Bal, Christoph Adam, Rüdiger Schott, Uli Zeitler, Werner Wegscheider, Thomas Ihn, Klaus Ensslin

Abstract: We report on transport experiments through high-mobility gate-tunable undoped InSb QWs. Due to the elimination of any Si modulation doping, the gate-defined two-dimensional electron gases in the quantum wells display a significantly increased mobility of 260,000 cm$^2$/Vs at a rather low density of $2.4\times10^{11}$ cm$^{-2}$. Using magneto-transport experiments, we characterize spin-orbit intera… ▽ More We report on transport experiments through high-mobility gate-tunable undoped InSb QWs. Due to the elimination of any Si modulation doping, the gate-defined two-dimensional electron gases in the quantum wells display a significantly increased mobility of 260,000 cm$^2$/Vs at a rather low density of $2.4\times10^{11}$ cm$^{-2}$. Using magneto-transport experiments, we characterize spin-orbit interactions by measuring weak antilocalization. Furthermore, by measuring Shubnikov-de Haas oscillations in tilted magnetic fields, we find that the g-factor agrees with $k \cdot p$ theory calculations at low magnetic fields but grows with spin polarization and carrier density at high magnetic fields. Additionally, signatures of Ising quantum Hall ferromagnetism are found at filling factor $ν$ = 2 for tilt angles where the Landau level energy equals the Zeeman energy. Despite the high mobility, the undoped InSb quantum wells exhibit no fractional quantum Hall effect up to magnetic fields of 25 T. △ Less

Submitted 21 October, 2021; originally announced October 2021.

Comments: 37 pages, 8 figures

An ultrastrongly coupled single THz meta-atom

Authors: Shima Rajabali, Sergej Markmann, Elsa Jöchl, Mattias Beck, Christian A. Lehner, Werner Wegscheider, Jérôme Faist, Giacomo Scalari

Abstract: Free-space coupling to strongly subwavelength individual optical elements is a central theme in quantum optics, as it allows to control and manipulate the properties of quantum systems. In this work, we show that by combining an asymmetric immersion lens setup and complementary design of metasurfaces we are able to perform THz time-domain spectroscopy of an individual, strongly subwavelength (d/λ0… ▽ More Free-space coupling to strongly subwavelength individual optical elements is a central theme in quantum optics, as it allows to control and manipulate the properties of quantum systems. In this work, we show that by combining an asymmetric immersion lens setup and complementary design of metasurfaces we are able to perform THz time-domain spectroscopy of an individual, strongly subwavelength (d/λ0=1/20) meta-atom. We unravel the linewidth dependence of planar metamaterials as a function of the meta-atom number indicating quenching of the Dicke superradiance. On these grounds, we investigate ultrastrongly coupled Landau polaritons at the single resonator level, measuring a normalized coupling ratio of Ω/ω=0.60 resulting from coupling of the fundamental mode to a few thousand electrons. Similar measurements on a low loss, less doped two dimensional electron gas yield a coupling ratio Ω/ω=0.33 with a cooperativity C=4g^2/κγ= 94. Interestingly, the coupling strength of a coupled single resonator is the same as of a coupled array. Our findings pave the way towards the control of light-matter interaction in the ultrastrong coupling regime at the single electron/single resonator level. The proposed technique is way more general and can be useful to characterize the complex conductivity of micron-sized samples in the THz and sub-THz domain. △ Less

Submitted 19 October, 2021; originally announced October 2021.

Comments: 28 pages, 5 figures

Large-bandwidth transduction between an optical single quantum-dot molecule and a superconducting resonator

Authors: Yuta Tsuchimoto, Zhe Sun, Emre Togan, Stefan Fält, Werner Wegscheider, Andreas Wallraff, Klaus Ensslin, Ataç İmamoğlu, Martin Kroner

Abstract: Quantum transduction between the microwave and optical domains is an outstanding challenge for long-distance quantum networks based on superconducting qubits. For all transducers realized to date, the generally weak light-matter coupling does not allow high transduction efficiency, large bandwidth, and low noise simultaneously. Here we show that a large electric dipole moment of an exciton in an o… ▽ More Quantum transduction between the microwave and optical domains is an outstanding challenge for long-distance quantum networks based on superconducting qubits. For all transducers realized to date, the generally weak light-matter coupling does not allow high transduction efficiency, large bandwidth, and low noise simultaneously. Here we show that a large electric dipole moment of an exciton in an optically active self-assembled quantum dot molecule (QDM) efficiently couples to a microwave resonator field at a single-photon level. This allows for transduction between microwave and optical photons without coherent optical pump fields to enhance the interaction. With an on-chip device, we demonstrate a sizeable single-photon coupling strength of 16 MHz. Thanks to the fast exciton decay rate in the QDM, the transduction bandwidth between an optical and microwave resonator photon reaches several 100s of MHz. △ Less

Submitted 17 January, 2022; v1 submitted 7 October, 2021; originally announced October 2021.

Comments: 30 pages, 12 figures

Journal ref: PRX Quantum 3, 030336 (2022)

Differential thermopower images as a probe of many-body effects in quantum point contacts

Authors: Yuan Ren, Joshua Folk, Yigal Meir, Tomaz Rejec, Werner Wegscheider

Abstract: Mesoscopic circuit elements such as quantum dots and quantum point contacts (QPCs) offer a uniquely controllable platform for engineering complex quantum devices, whose tunability makes them ideal for generating and investigating interacting quantum systems. However, the conductance measurements commonly employed in mesoscopics experiments are poorly suited to discerning correlated phenomena from… ▽ More Mesoscopic circuit elements such as quantum dots and quantum point contacts (QPCs) offer a uniquely controllable platform for engineering complex quantum devices, whose tunability makes them ideal for generating and investigating interacting quantum systems. However, the conductance measurements commonly employed in mesoscopics experiments are poorly suited to discerning correlated phenomena from those of single-particle origin. Here, we introduce non-equilibrium thermopower measurements as a novel approach to probing the local density of states (LDOS), offering an energy-resolved readout of many-body effects. We combine differential thermopower measurements with non-equilibrium density functional theory (DFT) to both confirm the presence of a localized state at the saddle point of a QPC and reveal secondary states that emerge wherever the reservoir chemical potential intersects the gate-induced potential barrier. These experiments establish differential thermopower imaging as a robust and general approach to exploring quantum many-body effects in mesoscopic circuits. △ Less

Submitted 5 October, 2021; originally announced October 2021.

Comments: main text and supplementary info

Breakdown of the topological protection by cavity vacuum fields in the integer quantum Hall effect

Authors: Felice Appugliese, Josefine Enkner, Gian Lorenzo Paravicini-Bagliani, Mattias Beck, Christian Reichl, Werner Wegscheider, Giacomo Scalari, Cristiano Ciuti, Jérôme Faist

Abstract: The control of the electronic properties of materials via the vacuum fields of cavity electromagnetic resonators is one of the emerging frontiers of condensed matter physics. We show here that the enhancement of vacuum field fluctuations in subwavelength split-ring resonators dramatically affects arguably one of the most paradigmatic quantum protectorates, namely the quantum Hall electron transpor… ▽ More The control of the electronic properties of materials via the vacuum fields of cavity electromagnetic resonators is one of the emerging frontiers of condensed matter physics. We show here that the enhancement of vacuum field fluctuations in subwavelength split-ring resonators dramatically affects arguably one of the most paradigmatic quantum protectorates, namely the quantum Hall electron transport in high-mobility 2D electron gases. The observed breakdown of the topological protection of the integer quantum Hall effect is interpreted in terms of a long-range cavity-mediated electron hopping where the anti-resonant terms of the light-matter coupling finally result into a finite resistivity induced by the vacuum fluctuations. The present experimental platform can be used for any 2D material and provides new ways to manipulate electron phases in matter thanks to vacuum-field engineering △ Less

Submitted 29 July, 2021; originally announced July 2021.

Journal ref: Science 375, 6584 (2022)

Capacitance and conductance oscillations from electron tunneling into high energy levels of a quantum well in a p-i-n diode

Authors: S. Parolo, M. Lupatini, E. Külah, C. Reichl, W. Dietsche, W. Wegscheider

Abstract: Two-dimensional electron and hole gases separated by a few nm from each other are produced in p-i-n diodes based upon MBE-grown GaAs/AlGaAs heterostructures. At such interlayer distances, the exciton formation and possibly Bose-Einstein condensation (BEC) is expected. We measure the capacitance between the layers and find it to oscillate as a function of the bias voltage. The peak values exceed th… ▽ More Two-dimensional electron and hole gases separated by a few nm from each other are produced in p-i-n diodes based upon MBE-grown GaAs/AlGaAs heterostructures. At such interlayer distances, the exciton formation and possibly Bose-Einstein condensation (BEC) is expected. We measure the capacitance between the layers and find it to oscillate as a function of the bias voltage. The peak values exceed the geometric capacitance by up to a factor of two. The surprisingly regular periods of the oscillations are of the order of 10 to 30 mV and scale linearly with the inverse of the thickness, between 60 and 150 nm, of the GaAs layer placed between the barrier and the p-doped AlGaAs. The oscillations are related to the resonant electron tunneling into high energy levels of this GaAs layer acting as a quantum well. We suggest that long lifetimes of the electrons in these levels are the origin of the large peak values of the capacitance. The possible relation of the capacitance oscillations with BEC is discussed. △ Less

Submitted 2 November, 2021; v1 submitted 1 July, 2021; originally announced July 2021.

In-situ Tuning of the Electric Dipole Strength of a Double Dot Charge Qubit: Charge Noise Protection and Ultra Strong Coupling

Authors: P. Scarlino, J. H. Ungerer, D. J. van Woerkom, M. Mancini, P. Stano, C. Muller, A. J. Landig, J. V. Koski, C. Reichl, W. Wegscheider, T. Ihn, K. Ensslin, A. Wallraff

Abstract: Semiconductor quantum dots, where electrons or holes are isolated via electrostatic potentials generated by surface gates, are promising building blocks for semiconductor-based quantum technology. Here, we investigate double quantum dot (DQD) charge qubits in GaAs, capacitively coupled to high-impedance SQUID array and Josephson junction array resonators. We tune the strength of the electric dipol… ▽ More Semiconductor quantum dots, where electrons or holes are isolated via electrostatic potentials generated by surface gates, are promising building blocks for semiconductor-based quantum technology. Here, we investigate double quantum dot (DQD) charge qubits in GaAs, capacitively coupled to high-impedance SQUID array and Josephson junction array resonators. We tune the strength of the electric dipole interaction between the qubit and the resonator in-situ using surface gates. We characterize the qubit-resonator coupling strength, qubit decoherence, and detuning noise affecting the charge qubit for different electrostatic DQD configurations. We find that all quantities can be tuned systematically over more than one order of magnitude, resulting in reproducible decoherence rates $Γ_2/2π<~5$ MHz in the limit of high interdot capacitance. Conversely, by reducing the interdot capacitance, we can increase the DQD electric dipole strength, and therefore its coupling to the resonator. By employing a Josephson junction array resonator with an impedance of $\sim4$ k$Ω$ and a resonance frequency of $ω_r/2π\sim 5.6$ GHz, we observe a coupling strength of $g/2π\sim 630$ MHz, demonstrating the possibility to achieve the ultrastrong coupling regime (USC) for electrons hosted in a semiconductor DQD. These results are essential for further increasing the coherence of quantum dot based qubits and investigating USC physics in semiconducting QDs. △ Less

Submitted 7 April, 2021; originally announced April 2021.

Comments: 24 pages, 13 figures

Journal ref: Phys. Rev. X 12, 031004 (2022)

The improved inverted AlGaAs/GaAs interface: its relevance for high-mobility quantum wells and hybrid systems

Authors: Elcin Külah, Christian Reichl, Jan Scharnetzky, Luca Alt, Werner Dietsche, Werner Wegscheider

Abstract: Two dimensional electron gases (2DEGs) realized at GaAs/AlGaAs single interfaces by molecular-beam epitaxy (MBE) reach mobilities of about 15 million cm^2/Vs if the AlGaAs alloy is grown after the GaAs. Surprisingly, the mobilities may drop to a few millions for the identical but inverted AlGaAs/GaAs interface, i.e. reversed layering. Here we report on a series of inverted heterostructures with va… ▽ More Two dimensional electron gases (2DEGs) realized at GaAs/AlGaAs single interfaces by molecular-beam epitaxy (MBE) reach mobilities of about 15 million cm^2/Vs if the AlGaAs alloy is grown after the GaAs. Surprisingly, the mobilities may drop to a few millions for the identical but inverted AlGaAs/GaAs interface, i.e. reversed layering. Here we report on a series of inverted heterostructures with varying growth parameters including temperature, doping, and composition. Minimizing the segregation of both dopants and background impurities leads to mobilities of 13 million cm^2/Vs for inverted structures. The dependence of the mobility on electron density tunes by a gate or by illumination is found to be the identical if no doping layers exist between the 2DEG and the respective gate. Otherwise, it differs significantly compared to normal interface structures. Reducing the distance of the 2DEG to the surface down to 50nm requires an additional doping layer between 2DEG and surface in order to compensate for the surface-Schottky barrier. The suitability of such shallow inverted structures for future semiconductor-superconductor hybrid systems is discussed. Lastly, our understanding of the improved inverted interface enables us to produce optimized double-sided doped quantum wells exhibiting an electron mobility of 40 million cm^2/Vs at 1K. △ Less

Submitted 24 June, 2021; v1 submitted 29 March, 2021; originally announced March 2021.

Comments: 19 pages, 9 figures

Donor implanted Back-gates in GaAs for MBE-grown highest mobility two-dimensional electron systems

Authors: Jan Scharnetzky, Philipp Baumann, Christian Reichl, Helmut Karl, Werner Dietsche, Werner Wegscheider

Abstract: Three different elements, Silicon, Selenium, and Tellurium, are ion-implanted in Gallium arsenide to form a conducting layer that serves as a back-gate to a molecular beam epitaxy (MBE) overgrown two-dimensional electron gas (2DEG). While the heavy ion Tellurium creates too many damages in the gallium arsenide to form a conducting layer, both Silicon and Selenium show promising results combined wi… ▽ More Three different elements, Silicon, Selenium, and Tellurium, are ion-implanted in Gallium arsenide to form a conducting layer that serves as a back-gate to a molecular beam epitaxy (MBE) overgrown two-dimensional electron gas (2DEG). While the heavy ion Tellurium creates too many damages in the gallium arsenide to form a conducting layer, both Silicon and Selenium show promising results combined with MBE-grown high-quality 2DEGs. Similar 2DEG mobility compared to non-implanted reference samples is achieved for both Silicon and Selenium implanted structures. Individual contacts to the back-gate are challenging. However, Silicon implanted structures, annealed before the MBE growth, result in a function back-gate, and the electron density of the 2DEG is tuned via the back-gate. △ Less

Submitted 26 March, 2021; originally announced March 2021.

Comments: 10 pages, 4 figures

Quantum simulation of antiferromagnetic Heisenberg chain with gate-defined quantum dots

Authors: C. J. van Diepen, T. -K. Hsiao, U. Mukhopadhyay, C. Reichl, W. Wegscheider, L. M. K. Vandersypen

Abstract: Quantum-mechanical correlations of interacting fermions result in the emergence of exotic phases. Magnetic phases naturally arise in the Mott-insulator regime of the Fermi-Hubbard model, where charges are localized and the spin degree of freedom remains. In this regime, the occurrence of phenomena such as resonating valence bonds, frustrated magnetism, and spin liquids is predicted. Quantum system… ▽ More Quantum-mechanical correlations of interacting fermions result in the emergence of exotic phases. Magnetic phases naturally arise in the Mott-insulator regime of the Fermi-Hubbard model, where charges are localized and the spin degree of freedom remains. In this regime, the occurrence of phenomena such as resonating valence bonds, frustrated magnetism, and spin liquids is predicted. Quantum systems with engineered Hamiltonians can be used as simulators of such spin physics to provide insights beyond the capabilities of analytical methods and classical computers. To be useful, methods for the preparation of intricate many-body spin states and access to relevant observables are required. Here, we show the quantum simulation of magnetism in the Mott-insulator regime with a linear quantum-dot array. We characterize the energy spectrum for a Heisenberg spin chain, from which we can identify when the conditions for homogeneous exchange couplings are met. Next, we study the multispin coherence with global exchange oscillations in both the singlet and triplet subspace of the Heisenberg Hamiltonian. Last, we adiabatically prepare the low-energy global singlet of the homogeneous spin chain and probe it with two-spin singlettriplet measurements on each nearest-neighbor pair and the correlations therein. The methods and control presented here open new opportunities for the simulation of quantum magnetism benefiting from the flexibility in tuning and layout of gate-defined quantum-dot arrays. △ Less

Submitted 17 November, 2021; v1 submitted 15 March, 2021; originally announced March 2021.

Comments: 15 pages, 11 figures

Journal ref: Physical Review X 11, 041025 (2021)

Local signatures of electron-electron scattering in an electronic cavity

Authors: Carolin Gold, Beat A. Bräm, Richard Steinacher, Tobias Krähenmann, Andrea Hofmann, Christian Reichl, Werner Wegscheider, Mansour Shayegan, Klaus Ensslin, Thomas Ihn

Abstract: We image equilibrium and non-equilibrium transport through a two-dimensional electronic cavity using scanning gate microscopy (SGM). Injecting electrons into the cavity through a quantum point contact close to equilibrium, we raster-scan a weakly invasive tip above the cavity regions and measure the modulated conductance through the cavity. Varying the electron injection energy between $\pm$ 2 meV… ▽ More We image equilibrium and non-equilibrium transport through a two-dimensional electronic cavity using scanning gate microscopy (SGM). Injecting electrons into the cavity through a quantum point contact close to equilibrium, we raster-scan a weakly invasive tip above the cavity regions and measure the modulated conductance through the cavity. Varying the electron injection energy between $\pm$ 2 meV, we observe that conductance minima turn into maxima beyond the energy threshold of $\pm$ 0.6 meV. This observation bears similarity to previous measurements by Jura et al. [Jura et al., Phys. Rev. B 82, 155328 (2010)] who used a strongly invasive tip potential to study electron injection into an open two-dimensional electron gas. This resemblance suggests a similar microscopic origin based on electron-electron interactions. △ Less

Submitted 14 January, 2021; originally announced January 2021.

Journal ref: Phys. Rev. Research 3, 013287 (2021)

Thermoelectric cooling properties of a quantum Hall Corbino device

Authors: Juan Herrera Mateos, Mariano A. Real, Christian Reichl, Alejandra Tonina, Werner Wegscheider, Werner Dietsche, Liliana Arrachea

Abstract: We analyze the thermoelectric cooling properties of a Corbino device in the quantum Hall regime on the basis of experimental data of electrical conductance. We focus on the cooling power and the coefficient of performance within and beyond linear response. Thermovoltage measurements in this device reported in {\em Phys. Rev. Applied, {\bf 14} 034019 (2020)} indicated that the transport takes place… ▽ More We analyze the thermoelectric cooling properties of a Corbino device in the quantum Hall regime on the basis of experimental data of electrical conductance. We focus on the cooling power and the coefficient of performance within and beyond linear response. Thermovoltage measurements in this device reported in {\em Phys. Rev. Applied, {\bf 14} 034019 (2020)} indicated that the transport takes place in the diffusive regime, without signatures of effects due to the electron-phonon interaction in a wide range of temperatures and filling factors. In this regime, the heat and charge currents by electrons can be described by a single transmission function. We infer this function from experimental data of conductance measurements and we calculate the cooling power and the coefficient of performance for a wide range of filling factors and temperatures, as functions of the thermal and electrical biases. We predict an interesting cooling performance in several parameter regimes. △ Less

Submitted 4 February, 2021; v1 submitted 22 December, 2020; originally announced December 2020.

Comments: 10 pages, 8 figures

Journal ref: Phys. Rev. B 103, 125404 (2021)

Superballistic electron flow through a point contact in a Ga[Al]As heterostructure

Authors: Lev V. Ginzburg, Carolin Gold, Marc P. Röösli, Christian Reichl, Matthias Berl, Werner Wegscheider, Thomas Ihn, Klaus Ensslin

Abstract: We measure electronic transport through point contacts in the high-mobility electron gas in a Ga[Al]As heterostructure at different temperatures and bulk electron densities. The conductance through all point contacts increases with increasing temperature in a temperature window around $T \sim 10 K$ for all investigated electron densities and point contact widths. For high electron densities this c… ▽ More We measure electronic transport through point contacts in the high-mobility electron gas in a Ga[Al]As heterostructure at different temperatures and bulk electron densities. The conductance through all point contacts increases with increasing temperature in a temperature window around $T \sim 10 K$ for all investigated electron densities and point contact widths. For high electron densities this conductance exceeds the fundamental ballistic limit (Sharvin limit). These observations are in agreement with a viscous electron transport model and previous experiments in graphene. △ Less

Submitted 2 June, 2021; v1 submitted 7 December, 2020; originally announced December 2020.

Comments: 5 pages, 2 figures

Journal ref: Phys. Rev. Research 3, 023033 (2021)

Imaging signatures of the local density of states in an electronic cavity

Authors: Carolin Gold, Beat A. Bräm, Michael S. Ferguson, Tobias Krähenmann, Andrea Hofmann, Richard Steinacher, Keith R. Fratus, Christian Reichl, Werner Wegscheider, Dietmar Weinmann, Klaus Ensslin, Thomas Ihn

Abstract: We use Scanning Gate Microscopy to study electron transport through an open, gate-defined resonator in a Ga(Al)As heterostructure. Raster-scanning the voltage-biased metallic tip above the resonator, we observe distinct conductance modulations as a function of the tip-position and voltage. Quantum mechanical simulations reproduce these conductance modulations and reveal their relation to the parti… ▽ More We use Scanning Gate Microscopy to study electron transport through an open, gate-defined resonator in a Ga(Al)As heterostructure. Raster-scanning the voltage-biased metallic tip above the resonator, we observe distinct conductance modulations as a function of the tip-position and voltage. Quantum mechanical simulations reproduce these conductance modulations and reveal their relation to the partial local density of states in the resonator. Our measurements illustrate the current frontier between possibilities and limitations in imaging the local density of states in buried electron systems using scanning gate microscopy. △ Less

Submitted 22 March, 2021; v1 submitted 27 November, 2020; originally announced November 2020.

Journal ref: Phys. Rev. Research 3, 032005 (2021)

Gate-defined Quantum Point Contact in an InSb Two-dimensional Electron Gas

Authors: Zijin Lei, Christian A. Lehner, Erik Cheah, Christopher Mittag, Matija Karalic, Werner Wegscheider, Klaus Ensslin, Thomas Ihn

Abstract: We investigate an electrostatically defined quantum point contact in a high-mobility InSb two-dimensional electron gas. Well-defined conductance plateaus are observed, and the subband structure of the quantum point contact is extracted from finite-bias measurements. The Zeeman splitting is measured in both in-plane and out-of-plane magnetic fields. We find an in-plane g factor… ▽ More We investigate an electrostatically defined quantum point contact in a high-mobility InSb two-dimensional electron gas. Well-defined conductance plateaus are observed, and the subband structure of the quantum point contact is extracted from finite-bias measurements. The Zeeman splitting is measured in both in-plane and out-of-plane magnetic fields. We find an in-plane g factor $|g_{\parallel}^* | \approx$ 40. The out-of-plane g factor is measured to be $|g_{\perp}^* | \approx$ 50, which is close to the g factor in the bulk. △ Less

Submitted 13 April, 2021; v1 submitted 5 November, 2020; originally announced November 2020.

Comments: 20 pages, 5 figures

Journal ref: Phys. Rev. Research 3, 023042 (2021)

Realization of a $CQ_3$ Qubit: energy spectroscopy and coherence

Authors: Benedikt Kratochwil, Jonne V. Koski, Andreas J. Landig, Pasquale Scarlino, José C. Abadillo-Uriel, Christian Reichl, Susan N. Coppersmith, Werner Wegscheider, Mark Friesen, Andreas Wallraff, Thomas Ihn, Klaus Ensslin

Abstract: The energy landscape of a single electron in a triple quantum dot can be tuned such that the energy separation between ground and excited states becomes a flat function of the relevant gate voltages. These so-called sweet spots are beneficial for charge coherence, since the decoherence effects caused by small fluctuations of gate voltages or surrounding charge fluctuators are minimized. We propose… ▽ More The energy landscape of a single electron in a triple quantum dot can be tuned such that the energy separation between ground and excited states becomes a flat function of the relevant gate voltages. These so-called sweet spots are beneficial for charge coherence, since the decoherence effects caused by small fluctuations of gate voltages or surrounding charge fluctuators are minimized. We propose a new operation point for a triple quantum dot charge qubit, a so-called $CQ_3$-qubit, having a third order sweet spot. We show strong coupling of the qubit to single photons in a frequency tunable high-impedance SQUID-array resonator. In the dispersive regime we investigate the qubit linewidth in the vicinity of the proposed operating point. In contrast to the expectation for a higher order sweet spot, we there find a local maximum of the linewidth. We find that this is due to a non-negligible contribution of noise on the quadrupolar detuning axis not being in a sweet spot at the proposed operating point. While the original motivation to realize a low-decoherence charge qubit was not fulfilled, our analysis provides insights into charge decoherence mechanisms relevant also for other qubits. △ Less

Submitted 10 June, 2020; originally announced June 2020.

Comments: 12 pages, 11 figures

Journal ref: Phys. Rev. Research 3, 013171 (2021)

Fractional Coulomb blockade for quasiparticle tunneling between edge channels

Authors: Marc P. Röösli, Michael Hug, Giorgio Nicolí, Peter Märki, Christian Reichl, Bernd Rosenow, Werner Wegscheider, Klaus Ensslin, Thomas Ihn

Abstract: We study the magneto-conductance of a $1.4~\mathrm{μm}$-wide quantum dot in the fractional quantum Hall regime. For a filling factor $\approx 2/3$ and $\gtrsim 1/3$ in the quantum dot the observed Coulomb resonances show a periodic modulation in magnetic field. This indicates a non-trivial reconstruction of the 2/3 fractional quantum Hall state in the quantum dot. We present a model for the charge… ▽ More We study the magneto-conductance of a $1.4~\mathrm{μm}$-wide quantum dot in the fractional quantum Hall regime. For a filling factor $\approx 2/3$ and $\gtrsim 1/3$ in the quantum dot the observed Coulomb resonances show a periodic modulation in magnetic field. This indicates a non-trivial reconstruction of the 2/3 fractional quantum Hall state in the quantum dot. We present a model for the charge stability diagram of the system assuming two compressible regions separated by an incompressible stripe of filling factor $2/3$ and $1/3$, respectively. From the dependence of the magnetic field period on total magnetic field we construct the zero-field charge density distribution in the quantum dot. The tunneling between the two compressible regions exhibits fractional Coulomb blockade. For both filling factor regions, we extract a fractional charge $e^*/e = 0.32 \pm 0.03$ by comparing to measurements at filling factor 2. With their close relation to quantum Hall Fabry-Pérot interferometers, our investigations on quantum dots in the fractional quantum Hall regime extend and complement interference experiments investigating the nature of anyonic fractional quantum Hall quasiparticles. △ Less

Submitted 26 May, 2020; originally announced May 2020.

Comments: 7 pages, 4 figures

Journal ref: Science Advances 7, eabf5547 (2021)

A polariton electric field sensor

Authors: Emre Togan, Yufan Li, Stefan Faelt, Werner Wegscheider, Atac Imamoglu

Abstract: We experimentally demonstrate a dipolar polariton based electric field sensor. We tune and optimize the sensitivity of the sensor by varying the dipole moment of polaritons. We show polariton interactions play an important role in determining the conditions for optimal electric field sensing, and achieve a sensitivity of 0.12 V-m$^{-1}$-Hz$^{-0.5}$. Finally we apply the sensor to illustrate that e… ▽ More We experimentally demonstrate a dipolar polariton based electric field sensor. We tune and optimize the sensitivity of the sensor by varying the dipole moment of polaritons. We show polariton interactions play an important role in determining the conditions for optimal electric field sensing, and achieve a sensitivity of 0.12 V-m$^{-1}$-Hz$^{-0.5}$. Finally we apply the sensor to illustrate that excitation of polaritons modify the electric field in a spatial region much larger than the optical excitation spot. △ Less

Submitted 9 April, 2020; originally announced April 2020.

Journal ref: Phys. Rev. Lett. 125, 067402 (2020)

Thermoelectricity in Quantum-Hall Corbino Structures

Authors: Mariano Real, Daniel Gresta, Christian Reichl, Jurgen Weis, Alejandra Tonina, Paula Giudici, Liliana Arrachea, Werner Wegscheider, Werner Dietsche

Abstract: We measure the thermoelectric response of Corbino structures in the quantum Hall effect regime and compare it with a theoretical analysis. The measured thermoelectric voltages are qualitatively and quantitatively simulated based upon the independent measurement of the conductivity indicating that they originate predominantly from the electron diffusion. Electron-phonon interaction does not lead to… ▽ More We measure the thermoelectric response of Corbino structures in the quantum Hall effect regime and compare it with a theoretical analysis. The measured thermoelectric voltages are qualitatively and quantitatively simulated based upon the independent measurement of the conductivity indicating that they originate predominantly from the electron diffusion. Electron-phonon interaction does not lead to a phonon-drag contribution in contrast to earlier Hall-bar experiments. This implies a description of the Onsager coefficients on the basis of a single transmission function, from which both thermovoltage and conductivity can be predicted with a single fitting parameter. It furthermore let us predict a figure of merit for the efficiency of thermoelectric cooling which becomes very large for partially filled Landau levels (LL) and high magnetic fieldse of merit can be estimated which becomes very large for partially filled Landau levels and high magnetic fields. △ Less

Submitted 10 August, 2020; v1 submitted 3 March, 2020; originally announced March 2020.

Comments: main article 8 pages, 8 figures

Journal ref: Phys. Rev. Applied 14, 034019 (2020)

Mesoscopic Elastic Distortions in GaAs Quantum Dot Heterostructures

Authors: Anastasios Pateras, Joonkyu Park, Youngjun Ahn, Jack A. Tilka, Martin V. Holt, Christian Reichl, Werner Wegscheider, Timothy A. Baart, Juan Pablo Dehollain, Uditendu Mukhopadhyay, Lieven M. K. Vandersypen, Paul G. Evans

Abstract: Quantum devices formed in high-electron-mobility semiconductor heterostructures provide a route through which quantum mechanical effects can be exploited on length scales accessible to lithography and integrated electronics. The electrostatic definition of quantum dots in semiconductor heterostructure devices intrinsically involves the lithographic fabrication of intricate patterns of metallic ele… ▽ More Quantum devices formed in high-electron-mobility semiconductor heterostructures provide a route through which quantum mechanical effects can be exploited on length scales accessible to lithography and integrated electronics. The electrostatic definition of quantum dots in semiconductor heterostructure devices intrinsically involves the lithographic fabrication of intricate patterns of metallic electrodes. The formation of metal/semiconductor interfaces, growth processes associated with polycrystalline metallic layers, and differential thermal expansion produce elastic distortion in the active areas of quantum devices. Understanding and controlling these distortions presents a significant challenge in quantum device development. We report synchrotron x-ray nanodiffraction measurements combined with dynamical x-ray diffraction modeling that reveal lattice tilts with a depth-averaged value up to 0.04 deg. and strain on the order of 10^-4 in the two-dimensional electron gas (2DEG) in a GaAs/AlGaAs heterostructure. Elastic distortions in GaAs/AlGaAs heterostructures modify the potential energy landscape in the 2DEG due to the generation of a deformation potential and an electric field through the piezoelectric effect. The stress induced by metal electrodes directly impacts the ability to control the positions of the potential minima where quantum dots form and the coupling between neighboring quantum dots. △ Less

Submitted 25 February, 2020; originally announced February 2020.

Journal ref: Nano Lett. 18, 2780 (2018)

Electron cascade for spin readout

Authors: C. J. van Diepen, T. -K. Hsiao, U. Mukhopadhyay, C. Reichl, W. Wegscheider, L. M. K. Vandersypen

Abstract: Electrons confined in semiconductor quantum dot arrays have both charge and spin degrees of freedom. The spin provides a well-controllable and long-lived qubit implementation. The charge configuration in the dot array is influenced by Coulomb repulsion, and the same interaction enables charge sensors to probe this configuration. Here we show that the Coulomb repulsion allows an initial charge tran… ▽ More Electrons confined in semiconductor quantum dot arrays have both charge and spin degrees of freedom. The spin provides a well-controllable and long-lived qubit implementation. The charge configuration in the dot array is influenced by Coulomb repulsion, and the same interaction enables charge sensors to probe this configuration. Here we show that the Coulomb repulsion allows an initial charge transition to induce subsequent charge transitions, inducing a cascade of electron hops, like toppling dominoes. A cascade can transmit information along a quantum dot array over a distance that extends by far the effect of the direct Coulomb repulsion. We demonstrate that a cascade of electrons can be combined with Pauli spin blockade to read out spins using a remote charge sensor. We achieve > 99.9% spin readout fidelity in 1.7 $\mathrmμ$s. The cascade-based readout enables operation of a densely-packed two-dimensional quantum dot array with charge sensors placed at the periphery. The high connectivity of such arrays greatly improves the capabilities of quantum dot systems for quantum computation and simulation. △ Less

Submitted 20 February, 2020; originally announced February 2020.

Comments: 13 pages, 6 figures

Journal ref: Nature Communications 12, 77 (2021)